JPH0650719B2 - Mask structure for lithography - Google Patents
Mask structure for lithographyInfo
- Publication number
- JPH0650719B2 JPH0650719B2 JP6546985A JP6546985A JPH0650719B2 JP H0650719 B2 JPH0650719 B2 JP H0650719B2 JP 6546985 A JP6546985 A JP 6546985A JP 6546985 A JP6546985 A JP 6546985A JP H0650719 B2 JPH0650719 B2 JP H0650719B2
- Authority
- JP
- Japan
- Prior art keywords
- holding
- thin film
- adhesive
- mask
- mask structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000001459 lithography Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 description 17
- 230000001070 adhesive effect Effects 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920002647 polyamide Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体基板のリソグラフイー加工技術に於いて
用いられるマスク構造体に関する。The present invention relates to a mask structure used in a lithographic processing technique for a semiconductor substrate.
リソグラフイー加工技術を用いて被加工材表面を部分的
に変質せしめる事により各種製品を製造する事が工業上
特に電子工業の分野に於いて広く利用されており、この
加工技術によれば、パターンが同一の表面変質部を有す
る製品を大量に製造する事が出来る。被加工材の表面変
質は各種エネルギー線の照射により行なわれ、この際に
はパターン形成のため、部分的にエネルギー線遮断材を
配置してなるマスクが用いられる。この様なマスクとし
ては照射するエネルギー線が可視光の場合には、ガラス
又は石英等の透明基板上に黒色の遮光塗料を部分的に塗
布したり又はＮｉ，Ｃｒ等の金属の可視光不透過性の薄
板又は薄膜を部分的に付与したものが用いられていた。It is widely used industrially, especially in the field of electronics, to manufacture various products by partially modifying the surface of the material to be processed using the lithographic processing technology. It is possible to manufacture a large amount of products having the same surface alteration part. The alteration of the surface of the material to be processed is performed by irradiation with various energy rays, and in this case, a mask in which an energy ray blocking material is partially arranged is used for pattern formation. As such a mask, when the energy rays to be irradiated are visible light, a black light-shielding paint is partially applied on a transparent substrate such as glass or quartz, or visible light of a metal such as Ni or Cr is not transmitted. A thin plate or thin film having a partial property has been used.
然るに、近年より微細なパターン形成が求められ、更に
より短時間でのリソグラフイー加工技術が求められるに
つれて、照射するエネルギー線としてＸ線、更にはイオ
ン線等の粒子線が用いられる様になってきた。これらの
エネルギー線は、上記可視光の場合に比較してマスク形
成部材として用いられたガラス板や石英板を通過せしめ
ると大部分が吸収されてしまう。このため、これらのエ
ネルギー線を用いる場合には、ガラス板や石英板を用い
てマスクを形成する事は好ましくない。そこでＸ線や粒
子線を照射するエネルギー線として用いるリソグラフイ
ー加工技術に於いては各種の無機薄膜例えば窒化シリコ
ン、窒化ホウ素又は酸化シリコン，チタン等の薄膜或い
は各種の有機薄膜例えばポリイミド，ポリアミド又はポ
リエステル等の薄膜、更にはこれらの積層膜をエネルギ
ー透過体として用いて、これらの面上に金，白金，ニツ
ケル，パラジウム，ロジウム又はインジウム等の金属薄
膜をエネルギー吸収体として部分的に付与する事によ
り、マスクを形成する事が行なわれている。However, as finer pattern formation is required in recent years and lithographic processing technology in a shorter time is required, X-rays and particle beams such as ion beams are used as energy beams for irradiation. It was Most of these energy rays are absorbed when they pass through a glass plate or a quartz plate used as a mask forming member as compared with the case of visible light. Therefore, when using these energy rays, it is not preferable to form the mask using a glass plate or a quartz plate. Therefore, in the lithographic processing technique used as energy rays for irradiating X-rays or particle beams, various inorganic thin films such as silicon nitride, boron nitride or silicon oxide, titanium or other thin films or various organic thin films such as polyimide, polyamide or polyester. By using these thin films such as etc., and further these laminated films as energy transmissive bodies, and partially applying a metal thin film such as gold, platinum, nickel, palladium, rhodium or indium on these surfaces as an energy absorber. , A mask is formed.
マスクは自己保形性がないので、適宜の保持体に支持さ
れる。第１図は、上記の様に構成されるリソグラフイー
用マスク構造体の断面図であり、第２図はその保持基板
の平面図である。これはエネルギー線吸収性のマスク材
１を所望のパターンにて片面に付与されたエネルギー線
透過性の保持薄膜２の周辺部が環状保持基板３と接着剤
４により接着されている。環状保持基板３の最上部平端
面３ａには接着剤４が塗布されておらず、該平端面３ａ
の外側に角度θにて交わる、接着がなされる面３ｂに接
着剤４が塗布されている。Since the mask is not self-shaped, it is supported by an appropriate holder. FIG. 1 is a sectional view of a lithographic mask structure constructed as described above, and FIG. 2 is a plan view of its holding substrate. This is a peripheral part of an energy ray transmitting holding thin film 2 provided on one surface with an energy ray absorbing mask material 1 in a desired pattern, and is adhered to an annular holding substrate 3 and an adhesive 4. The adhesive 4 is not applied to the uppermost flat end surface 3a of the annular holding substrate 3, and the flat end surface 3a
Adhesive 4 is applied to the surface 3b to be bonded, which intersects with the outside at an angle θ.
ところが以上の如き従来のマスク構造体に於いては、保
持基板３に保持薄膜２を接着するときに、接着剤４が保
持薄膜２と面３ｂとの間のみならず、保持薄膜２と環状
保持基板３の最上部平端面３ａとの間にまで広がる事が
多く、その結果、保持薄膜２の平面度の低下が生じてし
まうという事も少なくなかった。この平面度の低下は、
リソグラフイー工程に於ける精度不良を発生させ易いと
いう問題点を生じさせていた。However, in the conventional mask structure as described above, when the holding thin film 2 is bonded to the holding substrate 3, the adhesive 4 is not only applied between the holding thin film 2 and the surface 3b, but also the holding thin film 2 and the annular holding member. It often spreads up to the uppermost flat end surface 3a of the substrate 3, and as a result, the flatness of the holding thin film 2 often decreases. This decrease in flatness
This has caused a problem that precision defects are likely to occur in the lithographic process.
本発明の目的は、以上の如き従来技術に鑑み、改良され
た環状保持基板にマスク材保持薄膜を接着してなる、平
面度の優れた保持薄膜を有するリソグラフイー用マスク
構造体を提供する事である。In view of the above-mentioned conventional techniques, an object of the present invention is to provide a lithographic mask structure having a holding thin film having excellent flatness, which is formed by adhering a mask material holding thin film to an improved annular holding substrate. Is.
本発明の斯かる目的は、マスク材が所望のパターンで表
面に設けられているマスク材保持薄膜の周辺部を保持基
板に接着する事により形成されるリソグラフイー用マス
ク構造体に於いて、上記保持基板の上記接着がなされる
面に溝が設けられている事を特徴とするリソグラフイー
用マスク構造体により達成される。The object of the present invention is to provide a lithographic mask structure formed by adhering a peripheral portion of a mask material holding thin film provided on the surface of a mask material in a desired pattern to a holding substrate, wherein: This is achieved by a lithographic mask structure characterized in that a groove is provided on the surface of the holding substrate to which the above-mentioned adhesion is made.
第３図は本発明によるマスク構造体の第１の実施例の断
面図である。マスク材１は保持薄膜２の片面に所望のパ
ターンにて付与されている。マスク材１としては例えば
金，白金，ニッケル，パラジルム，ロジウム，インジウ
ム等の０．７μ程度の薄膜が用いられている。保持薄膜
２としては例えば窒化シリコン，窒化ホウ素，酸化シリ
コン，チタン等の無機薄膜又はポリイミド，ポリアミ
ド，ポリエステル等の有機薄膜、更にこれらの積層膜が
用いられ、その厚さは例えば２乃至１２μである。保持
薄膜２の周辺部は環状保持板３の最上部平端面より低い
部位で接着材４により接着され該保持基板２に保持され
ている。保持基板３の最上部平端面３ａには接着剤４が
塗布されておらず、該平端面３ａの外側に角度θにて交
わる面３ｂに接着剤４が塗布されている。角度θは０°
を超える値であれば特に制限はないが、好ましくは５乃
至９０°、より好ましくは５乃至６０°、最適には１５
乃至３０°である。保持基板３としては例えばシリコ
ン，ガラス，石英，リン青銅，黄銅，ニツケル，ステン
レス等が用いられる。接着剤４としては例えばエポキシ
系、ゴム系その他適宜のものが例えば溶剤型、熱硬化
型，光硬化型として用いられる。FIG. 3 is a sectional view of a first embodiment of a mask structure according to the present invention. The mask material 1 is applied to one surface of the holding thin film 2 in a desired pattern. As the mask material 1, for example, a thin film of gold, platinum, nickel, palladium, rhodium, indium or the like having a thickness of about 0.7 μm is used. As the holding thin film 2, for example, an inorganic thin film of silicon nitride, boron nitride, silicon oxide, titanium or the like or an organic thin film of polyimide, polyamide, polyester or the like, and a laminated film of these are used, and the thickness thereof is, for example, 2 to 12 μm. . The peripheral portion of the holding thin film 2 is adhered to the holding substrate 2 by an adhesive 4 at a position lower than the uppermost flat end surface of the annular holding plate 3. The adhesive 4 is not applied to the uppermost flat end surface 3a of the holding substrate 3, and the adhesive 4 is applied to a surface 3b that intersects the flat end surface 3a at an angle θ. Angle θ is 0 °
There is no particular limitation as long as it is a value of over 5, but it is preferably 5 to 90 °, more preferably 5 to 60 °, most preferably 15 °.
To 30 °. As the holding substrate 3, for example, silicon, glass, quartz, phosphor bronze, brass, nickel, stainless steel or the like is used. As the adhesive 4, for example, an epoxy type, a rubber type, or other appropriate type is used as a solvent type, a thermosetting type, or a photocuring type.
保持基板３の最上部平端面３ａの外側に角度θにて交わ
る、接着がなされる面３ｂには溝３ｃが設けられてお
り、該溝３ｃを設けることにより、接着剤４が保持基板
３の最上部平端面３ａに広がる前に溝３ｃに落ち込むの
で、接着剤４が最上部平端面３ａまで広がる事はなく、
保持薄膜２の平面性は良好に保たれる。A groove 3c is provided on a surface 3b that is bonded to the outside of the uppermost flat end surface 3a of the holding substrate 3 at an angle θ, and by providing the groove 3c, the adhesive 4 is applied to the holding substrate 3. Since it drops into the groove 3c before spreading to the uppermost flat end face 3a, the adhesive 4 does not spread to the uppermost flat end face 3a,
The flatness of the holding thin film 2 is kept good.
尚、溝３ｃには他の空間に通ずる空気抜けの穴（不図
示）が設けられていてもよい。The groove 3c may be provided with an air vent hole (not shown) that communicates with another space.
第４図は本発明によるマスク構造体の第２の実施例の断
面図である。本実施例に於いては、溝３ｃは接着がなさ
れる面３ｂの最上部平端面３ａと交わる位置の近傍に設
けられているので、接着剤４が最上部平端面３ａまで広
がるのを防止できる事に加えて、更に接着剤を塗布する
部分の面積を大きくする事ができるので、より確実な接
着が可能である。FIG. 4 is a sectional view of a second embodiment of the mask structure according to the present invention. In the present embodiment, the groove 3c is provided in the vicinity of the position where the surface 3b to be bonded intersects the uppermost flat end surface 3a, so that the adhesive 4 can be prevented from spreading to the uppermost flat end surface 3a. In addition to this, since the area of the portion to which the adhesive is applied can be increased, more reliable adhesion can be achieved.
第５図は本発明によるマスク構造体の第３の実施例の断
面図である。この場合は角度θが９０°に相当し、且つ
接着がなされる面として更に第３の面３ｄが形成されて
いる。本実施例の場合、溝３ｃは接着がなされる面３ｄ
の面３ｂと交わる位置の近傍に設けられており、該溝３
ｃへの流動が制御され保持薄膜２の平面性が良好に保た
れるとともに、接着剤４を塗布する部分の面積を大きく
する事ができる。FIG. 5 is a sectional view of a third embodiment of the mask structure according to the present invention. In this case, the angle θ corresponds to 90 °, and the third surface 3d is further formed as a surface to be bonded. In the case of the present embodiment, the groove 3c has a surface 3d to be bonded.
Is provided in the vicinity of the position intersecting the surface 3b of the
The flow to c is controlled, the flatness of the holding thin film 2 is kept good, and the area of the portion to which the adhesive 4 is applied can be increased.
尚、以上の実施例に於いて、保持基板３と最上部平端面
３ａ以外の面で接する保持薄膜２の部分はその立体的形
状に基づき余剰部分を生ずるが、これは予め適宜切除し
ておけばよい。In the above embodiment, the portion of the holding thin film 2 that contacts the holding substrate 3 on a surface other than the uppermost flat end surface 3a has a surplus portion due to its three-dimensional shape. Good.
又、以上の実施例に於いて、溝が保持基板の保持薄膜と
の接着部位の内側に設けられた場合を記したが、接着剤
が保持基板の最上部平端面に広がらない様に接着剤の流
動を制御出来れば、溝は上記接着部位のどの位置に設け
ても構わない。Further, in the above examples, the case where the groove is provided inside the adhesion portion of the holding substrate to the holding thin film is described, but the adhesive is applied so that the adhesive does not spread to the uppermost flat end surface of the holding substrate. The groove may be provided at any position of the above-mentioned bonding site as long as the flow of the above can be controlled.
更に、溝の数は１に限定されず２以上でもよく、溝の形
状は接着剤の流動を制御し得るものであれば何れでもよ
い。Further, the number of grooves is not limited to one, and may be two or more, and any shape may be used as long as the flow of the adhesive can be controlled.
〔効果〕 以上の如き本発明のリソグラフイー用マスク構造体によ
れば、マスク材保持薄膜の平面度を良好に保つ事が可能
で、高精度なリソグラフイー工程を行なう事が出来る。[Effect] According to the lithographic mask structure of the present invention as described above, the flatness of the mask material holding thin film can be kept good, and a highly accurate lithographic process can be performed.
第１図は従来のマスク構造体の断面図であり、第２図は
その保持基板の平面図である。第３図，第４図，第５図
は夫々本発明によるマスク構造体の断面図である。 １：マスク材、２：保持薄膜 ３：保持基板、３ｃ：溝 ４：接着剤FIG. 1 is a sectional view of a conventional mask structure, and FIG. 2 is a plan view of its holding substrate. 3, 4 and 5 are sectional views of the mask structure according to the present invention. 1: Mask material, 2: Holding thin film 3: Holding substrate, 3c: Groove 4: Adhesive
Claims (1)
れているマスク材保持薄膜の周辺部を保持基板に接着す
る事により形成されるリソグラフイー用マスク構造体に
於いて、上記保持基板の上記接着がなされる面に溝が設
けられている事を特徴とするリソグラフイー用マスク構
造体。1. A lithographic mask structure formed by adhering a peripheral portion of a mask material holding thin film on the surface of which a mask material is provided in a desired pattern to a holding substrate. A lithographic mask structure, wherein a groove is provided on the surface to which the above-mentioned adhesion is made.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6546985A JPH0650719B2 (en) | 1985-03-29 | 1985-03-29 | Mask structure for lithography |
| DE3524196A DE3524196C3 (en) | 1984-07-06 | 1985-07-05 | Lithography mask |
| US07/150,494 US4804600A (en) | 1984-07-06 | 1988-02-01 | Lithographic mask structure and process for preparing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6546985A JPH0650719B2 (en) | 1985-03-29 | 1985-03-29 | Mask structure for lithography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61223841A JPS61223841A (en) | 1986-10-04 |
| JPH0650719B2 true JPH0650719B2 (en) | 1994-06-29 |
Family
ID=13288002
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6546985A Expired - Fee Related JPH0650719B2 (en) | 1984-07-06 | 1985-03-29 | Mask structure for lithography |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0650719B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3168952B2 (en) | 1997-09-03 | 2001-05-21 | 日本電気株式会社 | Aperture device for electron beam writing and method of manufacturing the same |
-
1985
- 1985-03-29 JP JP6546985A patent/JPH0650719B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61223841A (en) | 1986-10-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |