JPH06506564A - 周波数分割光通信システムのための端子 - Google Patents
周波数分割光通信システムのための端子Info
- Publication number
- JPH06506564A JPH06506564A JP4505849A JP50584992A JPH06506564A JP H06506564 A JPH06506564 A JP H06506564A JP 4505849 A JP4505849 A JP 4505849A JP 50584992 A JP50584992 A JP 50584992A JP H06506564 A JPH06506564 A JP H06506564A
- Authority
- JP
- Japan
- Prior art keywords
- optical
- wavelength
- terminal
- cavity
- laser diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0028—Laser diodes used as detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Communication System (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims (3)
- 1.切替え可能なレーザダイオード(8−20)、分岐(7)を有する光学導波 管(6)、ミラー(29)および回折格子(21)を含む端子(1)であって、 該端子は、 通信システムのための少なくとも2個の接続部(24、25)と、 前記2個の接続部(24、25)間に延び、かつ少なくとも1個のレーザダイオ ード(9)を有する、送信用導波管と、 少なくとも2個の反射性(29)端面(27、28)を有する導波管(6)とし て形成された拡大光学空洞であって、この空洞は、波長回折格子(21)を備え る少なくとも1個のレーザダイオード(22、23)を有し、このレーザダイオ ードの波長は回折格子波長(λ1)の付近で同調可能とされており、さらに少な くとも1個の接続部(24、25)を前記空洞に接続するために前記一方のレー ザダイオード(12、15)を備える少なくとも1個の接続用導波管を有するも のと、および光信号(P6)の位相補正検出のための干渉性光検出器であって、 この検出器は前記空洞と一方の接続部(24)とに接続され、かつ入力光信号( P6)を空洞内で生成された所定の波長の光波と比較するための少なくとも一個 のレーザダイオード(17、18)を有するもの、を含み、 基板(5)上のレーザダイオード(8−20、22、23)は制御信号(1)の 支援によって、光吸収、光増幅、および光伝送モード間で切替え可能であること を特徴とする、共通の半導体基板(5)上の集積光学体中に形成された、周波数 分割光通信システムのための端子(1)。
- 2.前記空洞は波長回折格子(21)を備えた少なくとも2個のレーザダイオー ド(22、23)を有し、この波長回折格子は異なる格子定数を有し、さらにレ ーザダイオード(22、23)は相互に平行に接続されていることを特徴とする 、請求項1に記載の端子。
- 3.前記空洞は2個の独立した接続用導波管によって端子(1)の両接続部(2 4、25)に接続されていることを特徴とする、請求項1または2に記載の端子 。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9101077A SE468267B (sv) | 1991-04-10 | 1991-04-10 | Terminal foer ett frekvensdelat, optiskt kommunikationssystem |
SE9101077-7 | 1991-04-10 | ||
PCT/SE1992/000165 WO1992019051A1 (en) | 1991-04-10 | 1992-03-17 | A terminal for a frequency divided, optical communication system |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH06506564A true JPH06506564A (ja) | 1994-07-21 |
JP3262331B2 JP3262331B2 (ja) | 2002-03-04 |
Family
ID=20382423
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50584992A Expired - Lifetime JP3262331B2 (ja) | 1991-04-10 | 1992-03-17 | 周波数分割光通信システムのための端子 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5191625A (ja) |
EP (1) | EP0579620B1 (ja) |
JP (1) | JP3262331B2 (ja) |
DE (1) | DE69226861D1 (ja) |
SE (1) | SE468267B (ja) |
WO (1) | WO1992019051A1 (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5524014A (en) * | 1994-05-23 | 1996-06-04 | At&T Corp. | Optical frequency translator |
US5675592A (en) * | 1994-05-23 | 1997-10-07 | Lucent Technologies Inc. | Rapidly tunable integrated laser |
US5444725A (en) * | 1994-09-30 | 1995-08-22 | At&T Ipm Corp. | Multifrequency laser |
US5625726A (en) * | 1995-02-10 | 1997-04-29 | Ngk Insulators, Ltd. | Optical waveguide substrate, an article comprising the same and a substrate coupled thereto for holding optical fibers |
US5577139A (en) * | 1995-08-17 | 1996-11-19 | Lucent Technologies Inc. | Integrated-circuit optical network unit |
US5577138A (en) * | 1995-08-17 | 1996-11-19 | Lucent Technologies Inc. | Integrated-circuit optical network unit |
US6392257B1 (en) * | 2000-02-10 | 2002-05-21 | Motorola Inc. | Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same |
US6693033B2 (en) | 2000-02-10 | 2004-02-17 | Motorola, Inc. | Method of removing an amorphous oxide from a monocrystalline surface |
US6501973B1 (en) | 2000-06-30 | 2002-12-31 | Motorola, Inc. | Apparatus and method for measuring selected physical condition of an animate subject |
AU2001264985A1 (en) * | 2000-07-17 | 2002-01-30 | Motorola, Inc. | Apparatus for handling optical communication signals and method of manufacture therefor |
US6590236B1 (en) | 2000-07-24 | 2003-07-08 | Motorola, Inc. | Semiconductor structure for use with high-frequency signals |
WO2002009187A2 (en) * | 2000-07-24 | 2002-01-31 | Motorola, Inc. | Heterojunction tunneling diodes and process for fabricating same |
US6555946B1 (en) | 2000-07-24 | 2003-04-29 | Motorola, Inc. | Acoustic wave device and process for forming the same |
US6638838B1 (en) | 2000-10-02 | 2003-10-28 | Motorola, Inc. | Semiconductor structure including a partially annealed layer and method of forming the same |
US20020096683A1 (en) * | 2001-01-19 | 2002-07-25 | Motorola, Inc. | Structure and method for fabricating GaN devices utilizing the formation of a compliant substrate |
US6673646B2 (en) | 2001-02-28 | 2004-01-06 | Motorola, Inc. | Growth of compound semiconductor structures on patterned oxide films and process for fabricating same |
US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
US20030010992A1 (en) * | 2001-07-16 | 2003-01-16 | Motorola, Inc. | Semiconductor structure and method for implementing cross-point switch functionality |
US6646293B2 (en) | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
US6855992B2 (en) * | 2001-07-24 | 2005-02-15 | Motorola Inc. | Structure and method for fabricating configurable transistor devices utilizing the formation of a compliant substrate for materials used to form the same |
US6667196B2 (en) | 2001-07-25 | 2003-12-23 | Motorola, Inc. | Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method |
US6589856B2 (en) | 2001-08-06 | 2003-07-08 | Motorola, Inc. | Method and apparatus for controlling anti-phase domains in semiconductor structures and devices |
US6639249B2 (en) | 2001-08-06 | 2003-10-28 | Motorola, Inc. | Structure and method for fabrication for a solid-state lighting device |
US6673667B2 (en) | 2001-08-15 | 2004-01-06 | Motorola, Inc. | Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials |
US20030036217A1 (en) * | 2001-08-16 | 2003-02-20 | Motorola, Inc. | Microcavity semiconductor laser coupled to a waveguide |
US20030071327A1 (en) * | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
US20040012037A1 (en) * | 2002-07-18 | 2004-01-22 | Motorola, Inc. | Hetero-integration of semiconductor materials on silicon |
US20040070312A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Integrated circuit and process for fabricating the same |
US20040069991A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Perovskite cuprate electronic device structure and process |
US7020374B2 (en) * | 2003-02-03 | 2006-03-28 | Freescale Semiconductor, Inc. | Optical waveguide structure and method for fabricating the same |
US6965128B2 (en) * | 2003-02-03 | 2005-11-15 | Freescale Semiconductor, Inc. | Structure and method for fabricating semiconductor microresonator devices |
US20040164315A1 (en) * | 2003-02-25 | 2004-08-26 | Motorola, Inc. | Structure and device including a tunneling piezoelectric switch and method of forming same |
US7492992B1 (en) * | 2003-08-08 | 2009-02-17 | Neophotonics Corporation | Bi-directional PLC transceiver device |
TWI400896B (zh) * | 2009-12-10 | 2013-07-01 | Univ Nat Central | Millimeter wave photoelectric switch launcher |
CN107078462B (zh) * | 2014-07-11 | 2019-08-27 | 阿卡西亚通信有限公司 | 具有可调输出的集成大功率可调谐激光器 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3445110A (en) * | 1967-06-26 | 1969-05-20 | Max Rigert | Orbiting space vehicle game apparatus |
US4157860A (en) * | 1977-10-11 | 1979-06-12 | Bell Telephone Laboratories, Incorporated | Dual polarization electromagnetic switch and modulator |
US4273445A (en) * | 1978-08-23 | 1981-06-16 | Rockwell International Corporation | Interferometer gyroscope formed on a single plane optical waveguide |
EP0146196A3 (de) * | 1983-12-17 | 1987-01-21 | Philips Patentverwaltung GmbH | Integriert-optisches Bauelement |
US4790615A (en) * | 1986-03-06 | 1988-12-13 | Nippon Sheet Glass Co., Ltd. | Demultiplexing and/or multiplexing optical circuit |
US4831631A (en) * | 1986-09-29 | 1989-05-16 | Siemens Aktiengesellschaft | Laser transmitter comprising a semiconductor laser and an external resonator |
DE3702314C1 (de) * | 1987-01-27 | 1988-01-14 | Heidenhain Gmbh Dr Johannes | Lichtelektrische Messeinrichtung |
US4773074A (en) * | 1987-02-02 | 1988-09-20 | University Of Delaware | Dual mode laser/detector diode for optical fiber transmission lines |
JPH01118105A (ja) * | 1987-10-30 | 1989-05-10 | Brother Ind Ltd | 薄膜光機能素子 |
JP2733263B2 (ja) * | 1988-10-04 | 1998-03-30 | キヤノン株式会社 | 集積型光ノードおよびそれを用いたバス型光情報システム |
SE462351B (sv) * | 1988-10-21 | 1990-06-11 | Ericsson Telefon Ab L M | Laseranordning foer ett optiskt kommunikationssystem |
DE3904752A1 (de) * | 1989-02-16 | 1990-08-23 | Siemens Ag | Vorrichtung fuer den optischen direktempfang mehrerer wellenlaengen |
US5134671A (en) * | 1990-08-03 | 1992-07-28 | At&T Bell Laboratories | Monolithic integrated optical amplifier and photodetector |
US5119447A (en) * | 1990-11-06 | 1992-06-02 | General Instrument Corporation | Apparatus and method for externally modulating an optical carrier |
-
1991
- 1991-04-10 SE SE9101077A patent/SE468267B/sv not_active IP Right Cessation
-
1992
- 1992-03-17 EP EP92906456A patent/EP0579620B1/en not_active Expired - Lifetime
- 1992-03-17 DE DE69226861T patent/DE69226861D1/de not_active Expired - Lifetime
- 1992-03-17 WO PCT/SE1992/000165 patent/WO1992019051A1/en active IP Right Grant
- 1992-03-17 JP JP50584992A patent/JP3262331B2/ja not_active Expired - Lifetime
- 1992-04-10 US US07/866,495 patent/US5191625A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0579620A1 (en) | 1994-01-26 |
SE9101077D0 (sv) | 1991-04-10 |
US5191625A (en) | 1993-03-02 |
JP3262331B2 (ja) | 2002-03-04 |
SE468267B (sv) | 1992-11-30 |
DE69226861D1 (de) | 1998-10-08 |
EP0579620B1 (en) | 1998-09-02 |
WO1992019051A1 (en) | 1992-10-29 |
SE9101077L (sv) | 1992-10-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH06506564A (ja) | 周波数分割光通信システムのための端子 | |
US5051790A (en) | Optoelectronic interconnections for integrated circuits | |
EP1210755B1 (en) | Integrated opto-electronic wavelength converter assembly | |
US6175672B1 (en) | RF wide bandwidth lossless high performance low noise transmissive link | |
CA2361527C (en) | Opto-electronic oscillators having optical resonators | |
EP0860042B1 (en) | Method and apparatus for stabilizing a semiconductor laser | |
US5334854A (en) | Optical semiconductor device with wavelength selectivity and method for amplifying or emitting the light using the same | |
US4900917A (en) | Polarization insensitive optical communication device utilizing optical preamplification | |
CA1251261A (en) | Coherent lightwave transmitter with plurality of optical paths | |
JP2949647B2 (ja) | 光信号再生装置およびそれを含む光通信システム | |
US6327401B1 (en) | Multifrequency laser system | |
JPH03198032A (ja) | 光増幅器―光検出器デバイス | |
JP2940946B2 (ja) | 光信号の光フイルタ作用と光検出の方法と装置 | |
JPH1117279A (ja) | 波長多重光通信用素子、送信器、受信器および波長多重光通信システム | |
US7064891B2 (en) | Optical wavelength converter with a semiconductor optical amplifier | |
US5561546A (en) | Method and apparatus for improving the sensitivity of optical modulators | |
US20040109690A1 (en) | Optical control method and device | |
JPS6257280B2 (ja) | ||
WO2006011262A1 (ja) | 光信号増幅3端子装置 | |
JP3351212B2 (ja) | パルス光源 | |
US5355239A (en) | Coherent detection transceiver | |
JPH0626248B2 (ja) | 集積回路の相互接続方法および集積回路 | |
EP0172775B1 (en) | Semiconductor laser light modulation and demodulation system | |
JPS59211339A (ja) | 光伝送路途中から情報信号を取り出す方法 | |
JPS63231428A (ja) | コヒ−レント光通信の受信方式 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20081221 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091221 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091221 Year of fee payment: 8 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101221 Year of fee payment: 9 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111221 Year of fee payment: 10 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121221 Year of fee payment: 11 |
|
EXPY | Cancellation because of completion of term | ||
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121221 Year of fee payment: 11 |