JPH0646553B2 - Electronic beam device - Google Patents

Electronic beam device

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Publication number
JPH0646553B2
JPH0646553B2 JP17303687A JP17303687A JPH0646553B2 JP H0646553 B2 JPH0646553 B2 JP H0646553B2 JP 17303687 A JP17303687 A JP 17303687A JP 17303687 A JP17303687 A JP 17303687A JP H0646553 B2 JPH0646553 B2 JP H0646553B2
Authority
JP
Japan
Prior art keywords
deflection
lens
electron beam
ring
magnetic flux
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17303687A
Other languages
Japanese (ja)
Other versions
JPS6417363A (en
Inventor
泰造 石見
英信 村上
政司 安永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP17303687A priority Critical patent/JPH0646553B2/en
Publication of JPS6417363A publication Critical patent/JPS6417363A/en
Publication of JPH0646553B2 publication Critical patent/JPH0646553B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Electron Beam Exposure (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、電子ビーム装置に関し、もう少し詳しくい
うと、所定の位置に電子ビームを電磁偏向する強磁性体
からなる偏向レンズをもつ偏向器を備えた電子ビーム装
置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron beam apparatus, and more specifically, to a deflector having a deflection lens made of a ferromagnetic material for electromagnetically deflecting an electron beam at a predetermined position. The present invention relates to a provided electron beam device.

〔従来の技術〕 第4図は、従来の電子ビーム装置の例として、電子ビー
ム溶接機等の熱加工機や電子ビーム描画装置を示し、図
において、電子銃(1)から放出された電子ビーム(2)は、
集束レンズ(3)でターゲット(5)上に集束される。偏向レ
ンズ(6)は、コンピユータ等の信号源の発生する偏向信
号により電子ビーム(2)を偏向してターゲット(5)上に電
子ビーム(2)を正確に位置決めする。一般に、偏向領域
が大きい場合は磁界偏向レンズが用いられる。しかし、
磁界偏向には渦電流の発生とヒステリシス効果によりビ
ーム照射位置の誤差が生じるため、従来種々の工夫が行
われていた。
[Prior Art] FIG. 4 shows a thermal processing machine such as an electron beam welding machine and an electron beam drawing apparatus as an example of a conventional electron beam apparatus. In the figure, an electron beam emitted from an electron gun (1) is shown. (2) is
It is focused on the target (5) by the focusing lens (3). The deflection lens (6) deflects the electron beam (2) by a deflection signal generated by a signal source such as a computer and accurately positions the electron beam (2) on the target (5). Generally, when the deflection area is large, a magnetic field deflection lens is used. But,
Since various errors are generated in the beam irradiation position in the magnetic field deflection due to the generation of eddy current and the hysteresis effect, various measures have been conventionally performed.

例えば、第5図は特開昭54−137977号公報に示
された従来の電子ビーム装置の集束レンズおよび偏向レ
ンズを示し、図において、磁気シールドを兼ねた集束レ
ンズ(3)の磁極(11)、集束レンズ(3)の磁極(12)、集束レ
ンズ(3)のコイル(13)、偏向レンズ(6)の磁極(14)および
偏向レンズ(6)のコイル(15)を備えている。
For example, FIG. 5 shows a focusing lens and a deflecting lens of a conventional electron beam apparatus disclosed in Japanese Patent Laid-Open No. 54-137977. In the figure, the magnetic pole (11) of the focusing lens (3) also serving as a magnetic shield is shown. A magnetic pole (12) of the focusing lens (3), a coil (13) of the focusing lens (3), a magnetic pole (14) of the deflecting lens (6) and a coil (15) of the deflecting lens (6).

以上の構成により、偏向レンズ(6)のコイル(15)には電
子ビーム(2)を高速で走査するため数100KHz以上の高周
波電流が流れ、高周波磁場が偏向レンズの磁極(14)中や
偏向レンズ(6)の周辺に生じる。従つて、偏向レンズの
磁極(14)が金属である場合や偏向レンズ(6)に近接した
場所に金属が存在すると高周波磁場による渦電流が発生
し、偏向磁界が乱れる。そこで、この例では、偏向レン
ズの磁極(14)と、集束レンズ(3)の構成部品の中で最も
高周波磁場の影響を受け易い磁極(12)の先端部にフエラ
イトでなる磁極(11)を配置し、前記の渦電流の発生を低
減し、また、フエライト材料を選択することにより、前
記のヒステリシスを低減していた。
With the above configuration, a high frequency current of several 100 KHz or more flows in the coil (15) of the deflection lens (6) to scan the electron beam (2) at high speed, and a high frequency magnetic field is generated in the deflection lens magnetic pole (14) or in the deflection lens. It occurs around the lens (6). Therefore, when the magnetic pole (14) of the deflecting lens is made of metal or when the metal is present near the deflecting lens (6), an eddy current is generated by the high frequency magnetic field, and the deflecting magnetic field is disturbed. Therefore, in this example, the magnetic pole (14) of the deflection lens and the magnetic pole (11) made of ferrite are provided at the tip of the magnetic pole (12) most susceptible to the high frequency magnetic field among the components of the focusing lens (3). The above-mentioned hysteresis is reduced by arranging them to reduce the generation of the above-mentioned eddy current and by selecting the ferrite material.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

従来の電子ビーム装置は、偏向レンズ系が以上のように
構成されており、主に渦電流を防止するために、偏向レ
ンズ系付近の構成体にフエライト等の磁性体を用いてい
た。しかし、フエライト等の強磁性体は必ずヒステリシ
ス特性を有するため、残留磁場を発生して、同じ偏向電
流値でも磁界偏向レンズ系においても、高精度にビーム
照射位置が異なるという、電子ビームを用いた高精度の
加工または露光装置にとつては、重大な問題点があつ
た。
In the conventional electron beam apparatus, the deflection lens system is configured as described above, and a magnetic material such as ferrite is used for the components near the deflection lens system mainly to prevent the eddy current. However, since ferromagnets such as ferrite always have a hysteresis characteristic, an electron beam is used, which produces a residual magnetic field and accurately varies the beam irradiation position even in the same deflection current value and in the magnetic field deflection lens system. A high-precision processing or exposure apparatus has a serious problem.

この発明は上記のような問題点を解消するためになされ
たもので、ヒステリシス特性を有する材料で構成された
磁界偏向レンズ系においても、高精度にビーム照射位置
を定めることができる偏向レンズ系を備えた電子ビーム
装置を得ることを目的とする。
The present invention has been made in order to solve the above problems, and a deflection lens system capable of accurately determining a beam irradiation position even in a magnetic field deflection lens system made of a material having a hysteresis characteristic is provided. The purpose of the invention is to obtain an electron beam device equipped with the device.

〔問題点を解決するための手段〕[Means for solving problems]

この発明に係る電子ビーム装置は、強磁性体のコアを有
する偏向レンズの上下または一方に意識的にヒステリシ
ス特性を有する強磁性体のリングを配置した偏向レンズ
系を備えている。
The electron beam apparatus according to the present invention includes a deflection lens system in which a ferromagnetic ring having a hysteresis characteristic is intentionally arranged above or below a deflection lens having a ferromagnetic core.

〔作用〕[Action]

この発明における磁性体リングは、偏向レンズの漏洩磁
場を通過させ、偏向器の残留磁場と逆方向の残留磁場を
ビーム通路中に発生させて、ヒステリシス特性に起因し
た残留磁場によるビーム照射位置の誤差を打消す。
The magnetic ring according to the present invention allows the leakage magnetic field of the deflecting lens to pass therethrough and generates the residual magnetic field in the opposite direction to the residual magnetic field of the deflector in the beam path, thereby causing an error in the beam irradiation position due to the residual magnetic field due to the hysteresis characteristic. Cancel.

〔実施例〕〔Example〕

以下、この発明の一実施例を第1図〜第3図について説
明する。第1図において、偏向レンズ(6)の上,下にそ
れぞれ強磁性体であるフエライトでなるリング(21)が配
設されている。(22)はコイル(15)に流れる偏向電流で発
生した偏向磁束、(23)はコイル(15)に流れる偏向電流で
発生した漏洩磁束、(24)は上記偏向電流を0にしたとき
に偏向レンズの磁極(14)のヒステリシス特性に起因して
ビーム通路中に残る残留磁束(以下、コア残留磁束とい
う)、(25)は上記偏向電流を0にしたときにリング(21)
にヒステリシス特性に起因してビーム通路中に残る残留
磁束(以下、リング残留磁束という)である。第2図
(a),(b)はそれぞれ偏向レンズ(6)とリング(21)中の磁
束の方向を上面から示したものである。
An embodiment of the present invention will be described below with reference to FIGS. In FIG. 1, rings (21) made of ferrite, which is a ferromagnetic material, are disposed above and below the deflection lens (6). (22) is the deflection magnetic flux generated by the deflection current flowing in the coil (15), (23) is the leakage magnetic flux generated by the deflection current flowing in the coil (15), and (24) is the deflection magnetic flux when the deflection current is zero. The residual magnetic flux remaining in the beam path due to the hysteresis characteristic of the magnetic pole (14) of the lens (hereinafter referred to as the core residual magnetic flux), (25) is the ring (21) when the deflection current is zero.
The residual magnetic flux remaining in the beam path due to the hysteresis characteristic (hereinafter referred to as ring residual magnetic flux). Fig. 2
(a) and (b) show the direction of the magnetic flux in the deflection lens (6) and the ring (21) from the top.

以上の構成により、コイル(15)に流れた偏向電流は、偏
向磁束(22)と漏洩磁束(23)とを発生する。偏向磁束(22)
は電子ビーム(2)に作用してこれを偏向させる。漏洩磁
束(23)は磁極(14)のN極を出ると近接したリング(21)に
入り、さらにリング(21)内を通り磁極(14)S極近くで再
び空間に出て磁極(14)のS極に入る。第2図に示すよう
に偏向レンズ(6)中の磁束とリング(21)中の磁束の向き
は反対である。従つてコイル(15)に流れる電流を0とし
た後、コア残留磁束(24)とリング残留磁束(25)の方向は
互いに反対となる。両者は電子ビーム(1)中に作用する
が、その方向は互いに反対であるため、それぞれのビー
ム照射位置に及ぼす影響は相殺される。
With the above configuration, the deflection current flowing in the coil (15) generates the deflection magnetic flux (22) and the leakage magnetic flux (23). Bending magnetic flux (22)
Acts on the electron beam (2) to deflect it. When the magnetic flux leaks (23) exits the N pole of the magnetic pole (14), it enters the adjacent ring (21), passes through the ring (21), and again exits into the space near the S pole and the magnetic pole (14). Enter the S pole. As shown in FIG. 2, the directions of the magnetic flux in the deflection lens (6) and the magnetic flux in the ring (21) are opposite. Therefore, after the current flowing through the coil (15) is set to 0, the directions of the core residual magnetic flux (24) and the ring residual magnetic flux (25) are opposite to each other. Both act in the electron beam (1), but since their directions are opposite to each other, their influence on the irradiation position of each beam is canceled out.

以上の作用を第3図によりさらに詳しく述べると、磁極
(14)、リング(21)のビーム軌道方向の全長lc,lrと、偏
向レンズ(6)、リング(21)のビーム軌道中の残留磁束密
度Bcr、BrrがBcrlc2Brrlrとなる条件で、磁性体のヒ
ステリシス特性または寸法を選らべば、ビーム照射位置
の誤差を完全に打ち消すことができる。
The above operation will be described in more detail with reference to FIG.
(14), the total length of the ring (21) in the beam orbit direction, l c and l r, and the residual magnetic flux densities B cr and B rr in the beam orbit of the deflection lens (6) and the ring (21) are B cr l c 2B By selecting the hysteresis characteristic or size of the magnetic material under the condition of rr l r , the error of the beam irradiation position can be completely canceled.

また、リング(21)は、漏洩磁束のシールド材としても働
くため、偏向レンズ(6)近くに集束レンズ等の金属があ
つた場合も、渦電流が発生しないという2重の効果も有
する。
Further, since the ring (21) also functions as a shield material for the leakage magnetic flux, even when a metal such as a focusing lens is present near the deflection lens (6), there is a double effect that an eddy current is not generated.

なお、上記実施例では偏向レンズ(6)の上下にリング(2
1)を設けた例を示したが、リングは1つでも同様の効果
が得られる。
In the above embodiment, the ring (2
Although the example in which 1) is provided is shown, the same effect can be obtained even with one ring.

また、偏向レンズやリング材としてフエライトの例を示
したが、高周波で動作させない場合などは、パーマロイ
等の強磁性体を用いてもよい。
Although an example of ferrite is shown as the deflecting lens and the ring material, a ferromagnetic material such as permalloy may be used when it is not operated at a high frequency.

さらに、上記実施例では電子ビーム加工器や露光機の場
合について説明したが、高精度デイスプレイ等、高精度
の磁界偏向が用いられる他の装置であつてもよく、上記
実施例と同様の効果を奏する。
Further, in the above embodiment, the case of the electron beam processing device and the exposure device was described, but it may be another device using high precision magnetic field deflection such as a high precision display, and the same effect as the above embodiment is obtained. Play.

〔発明の効果〕〔The invention's effect〕

以上のように、この発明によれば、偏向レンズの上下の
少なくとも一方にヒステリシス特性を有する強磁性体の
リングを配置したので、電子ビームに与える偏向磁極等
のヒステリシスの影響を打ち消すことができ、ビーム照
射位置精度の高い偏向レンズ系が得られ、さらに偏向レ
ンズの近くに集束レンズ等の金属があった場合にも、漏
洩磁束がシールドされて、渦電流が発生しないという効
果がある。
As described above, according to the present invention, since the ferromagnetic ring having the hysteresis characteristic is arranged on at least one of the upper and lower sides of the deflection lens, it is possible to cancel the influence of the hysteresis such as the deflection magnetic pole on the electron beam. A deflection lens system with high beam irradiation position accuracy can be obtained, and even when there is a metal such as a focusing lens near the deflection lens, the leakage magnetic flux is shielded and an eddy current is not generated.

【図面の簡単な説明】[Brief description of drawings]

第1図〜第3図はこの発明の一実施例を示し、第1図は
要部側断面図、第2図は作用を説明するための一部平面
図、第3図は作用を説明するための要部側断面図であ
る。第4図および第5図はそれぞれ従来の電子ビーム装
置の要部側断面図である。 (1)……電子銃、(2)……電子ビーム、(3)……集束レン
ズ、(5)……ターゲット、(6)……偏向レンズ、(14)……
偏向磁極、(15)……偏向コイル、(21)……リング。 なお、各図中、同一符号は同一又は相当部分を示す。
1 to 3 show an embodiment of the present invention, FIG. 1 is a side sectional view of an essential part, FIG. 2 is a partial plan view for explaining the action, and FIG. 3 is for explaining the action. FIG. FIG. 4 and FIG. 5 are side sectional views of a main part of a conventional electron beam apparatus. (1) …… electron gun, (2) …… electron beam, (3) …… focusing lens, (5) …… target, (6) …… deflecting lens, (14) ……
Deflection magnetic pole, (15) …… deflection coil, (21) …… ring. In each figure, the same reference numerals indicate the same or corresponding parts.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】電子ビームを発生する電子銃と、上記電子
ビームをターゲット上に集束する集束レンズ系と、上記
ターゲット上の所定の位置に上記電子ビームを電磁偏向
する強磁性体からなる偏向磁極を持つ偏向レンズと、上
記偏向レンズの上、下の少なくとも一方に近接して配置
した強磁性体からなるリングとを備えた電子ビーム装
置。
1. An electron gun for generating an electron beam, a focusing lens system for focusing the electron beam on a target, and a deflection magnetic pole made of a ferromagnetic material for electromagnetically deflecting the electron beam at a predetermined position on the target. An electron beam apparatus comprising: a deflection lens having a reflection lens; and a ring made of a ferromagnetic material disposed close to at least one of an upper side and a lower side of the deflection lens.
JP17303687A 1987-07-13 1987-07-13 Electronic beam device Expired - Lifetime JPH0646553B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17303687A JPH0646553B2 (en) 1987-07-13 1987-07-13 Electronic beam device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17303687A JPH0646553B2 (en) 1987-07-13 1987-07-13 Electronic beam device

Publications (2)

Publication Number Publication Date
JPS6417363A JPS6417363A (en) 1989-01-20
JPH0646553B2 true JPH0646553B2 (en) 1994-06-15

Family

ID=15953010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17303687A Expired - Lifetime JPH0646553B2 (en) 1987-07-13 1987-07-13 Electronic beam device

Country Status (1)

Country Link
JP (1) JPH0646553B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6367627B2 (en) * 2014-01-10 2018-08-01 三菱電機株式会社 Electron beam processing machine

Also Published As

Publication number Publication date
JPS6417363A (en) 1989-01-20

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