JPH064326B2 - Liquid jet recording head - Google Patents
Liquid jet recording headInfo
- Publication number
- JPH064326B2 JPH064326B2 JP59152361A JP15236184A JPH064326B2 JP H064326 B2 JPH064326 B2 JP H064326B2 JP 59152361 A JP59152361 A JP 59152361A JP 15236184 A JP15236184 A JP 15236184A JP H064326 B2 JPH064326 B2 JP H064326B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recording head
- liquid
- heat
- lower layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000007788 liquid Substances 0.000 title claims description 84
- 238000010438 heat treatment Methods 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 17
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 230000020169 heat generation Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 143
- 239000000758 substrate Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 20
- 239000000463 material Substances 0.000 description 17
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005338 heat storage Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- LRTTZMZPZHBOPO-UHFFFAOYSA-N [B].[B].[Hf] Chemical compound [B].[B].[Hf] LRTTZMZPZHBOPO-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- XTDAIYZKROTZLD-UHFFFAOYSA-N boranylidynetantalum Chemical compound [Ta]#B XTDAIYZKROTZLD-UHFFFAOYSA-N 0.000 description 1
- AUVPWTYQZMLSKY-UHFFFAOYSA-N boron;vanadium Chemical compound [V]#B AUVPWTYQZMLSKY-UHFFFAOYSA-N 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1604—Production of bubble jet print heads of the edge shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Description
【発明の詳細な説明】 [産業上の利用分野] 本発明は液体を吐出して記録を行なう液体噴射記録ヘッ
ドに関する。The present invention relates to a liquid jet recording head that ejects liquid to perform recording.
[従来技術] インクジェット記録法(液体噴射記録法)は、記録時に
おける騒音の発生が無視し得る程度に極めて小さいとい
う点高速記録が可能であり、而も所謂普通紙に定着とい
う特別な処理を必要とせずに記録の行なえる点において
最近関心を集めている。[Prior Art] The inkjet recording method (liquid jet recording method) enables high-speed recording in that noise generation during recording is extremely small to a negligible level, and a special process of fixing on so-called plain paper is required. Recently, he has been interested in the fact that he can record without needing it.
その中で例えば特開昭54−51837号公報、ドイツ
公開(DOLS)第2843064号公報に記載されて
ある液体噴射記録法は、熱エネルギーを液体に作用させ
て、液滴吐出の為の原動力を得るという点において、他
の液体噴射記録法とは、異なる特徴を有している。Among them, the liquid jet recording method described in, for example, Japanese Patent Laid-Open No. 54-51837 and German Patent (DOLS) 2843064, applies thermal energy to a liquid to provide a driving force for discharging liquid droplets. In that respect, it has different characteristics from other liquid jet recording methods.
殊に、DOLS 2843064号公報に開示されてい
る液体噴射記録法は、所謂drop−on deman
d記録法に極めて有効に適用されるばかりではなく、記
録ヘッド部をfull lineタイプで高密度マルチ
オリフィス化された記録ヘッドが容易に具現化出来るの
で、高解像度、高品度の画像を高速で得られるという特
徴を有している。In particular, the liquid jet recording method disclosed in DOLS 2843064 is a so-called drop-on deman.
Not only is it very effectively applied to the d-recording method, but it is also possible to easily embody a recording head with a full line type high-density multi-orifice, so that high-resolution, high-quality images can be produced at high speed. It has the feature of being obtained.
上記の記録法に適用される装置の記録ヘッド部は、液体
を吐出する為に設けられたオリフィスと、該オリフィス
に連通し、液滴を吐出する為のエネルギーが液体に作用
する部分である熱作用部が設けられている液流路とを有
する液吐出部と、熱エネルギーを発生する手段としての
電気熱変換体とを具備している。The recording head portion of the apparatus applied to the above-described recording method is an orifice provided for ejecting a liquid, and a portion which is in communication with the orifice and in which energy for ejecting a droplet acts on the liquid. It is provided with a liquid discharge part having a liquid flow path provided with an action part, and an electrothermal converter as means for generating thermal energy.
そして、この電気熱変換体は、一対の電極と、これ等の
電極に接続し、これ等の電極の間に発熱する領域(熱発
生部)を有する発熱抵抗層とを具備している。The electrothermal converter includes a pair of electrodes, and a heating resistance layer that is connected to these electrodes and has a region (heat generating portion) that generates heat between these electrodes.
この様な液体噴射記録ヘッドの構造を示す典型的な例が
第1(a)、及び第1図(b)に示される。Typical examples showing the structure of such a liquid jet recording head are shown in FIGS. 1 (a) and 1 (b).
第1図(a)は、本発明に係わる液体噴射記録ヘッドの
オリフィス側から見た正面部分図、第1図(b)は、第
1図(a)に一点鎖線XYで示す部分で切断した場合の
切断面部分図である。FIG. 1 (a) is a front partial view of the liquid jet recording head according to the present invention as seen from the orifice side, and FIG. 1 (b) is a sectional view taken along the one-dot chain line XY in FIG. 1 (a). It is a cut surface partial view in the case.
図に示される記録ヘッド101は、その表面に電気熱変
換体102が設けられている基板103の表面に、所定
の綿密度で所定の巾と深さの溝が所定数設けられている
溝付板104で覆う様に接合することによって、オリフ
ィス105と液吐出部106が形成された構造を有して
る。図に示す記録ヘッドの場合、オリフィス105を複
数有するものとして示されてあるが、勿論本発明におい
ては、これに限定されるものではなく単一オリフィスの
場合の記録ヘッドも本発明の範疇に這入るものである。The recording head 101 shown in the figure is provided with a groove having a predetermined number of grooves with a predetermined cotton density and a predetermined width and depth provided on the surface of a substrate 103 on which the electrothermal converter 102 is provided. It has a structure in which the orifice 105 and the liquid discharge portion 106 are formed by joining so as to cover with the plate 104. In the case of the recording head shown in the drawing, it is shown as having a plurality of orifices 105, but of course, the present invention is not limited to this, and a recording head with a single orifice also falls within the scope of the present invention. It is a thing.
液吐出部106は、その終端に液体を吐出させる為のオ
リフィス105と、電気熱変換体102より発生される
熱エネルギーが液体に作用して気泡を発生し、その体積
の膨張と収縮に依る急激な状態変化を引起す処である熱
作用部107とを有する。The liquid ejecting portion 106 has an orifice 105 for ejecting the liquid at the end thereof, and thermal energy generated by the electrothermal converter 102 acts on the liquid to generate bubbles, which rapidly expands and contracts due to expansion and contraction of the volume. And a heat acting portion 107 that is a portion that causes various state changes.
熱作用部107は、電気熱変換体102の熱発生部10
8の上部に位置し、熱発生部108の液体と接触する面
としての熱作用面109をその底面としている。The heat acting portion 107 is the heat generating portion 10 of the electrothermal converter 102.
The heat acting surface 109, which is located on the upper part of 8 and is in contact with the liquid of the heat generating portion 108, is the bottom surface thereof.
熱発生部108は、基板103上に設けられた下部層1
10、該下部層110上に設けられた発熱抵抗層11
1、該発熱抵抗層111上に設けられた上部層112と
で構成される。発熱抵抗層111には、熱を発生させる
為に該層111に通電する為の電極113,114がそ
の表面に設けられてある。電極113は、各液吐出部の
熱発生部に共通の電極であり、電極114は、各液吐出
部の熱発生部を選択して発熱させる為の選択電極であっ
て、液吐出部の液流路に沿って設けられてある。The heat generating portion 108 is the lower layer 1 provided on the substrate 103.
10, heating resistance layer 11 provided on the lower layer 110
1 and an upper layer 112 provided on the heating resistance layer 111. The heating resistance layer 111 is provided with electrodes 113 and 114 on its surface for supplying electricity to the layer 111 in order to generate heat. The electrode 113 is an electrode common to the heat generating portions of the liquid ejecting portions, and the electrode 114 is a selection electrode for selecting the heat generating portion of each liquid ejecting portion to generate heat. It is provided along the flow path.
上部層112は、熱発生部108に於いては発熱抵抗層
111を、使用する液体から化学的・物理的に保護する
為に発熱抵抗層111と液吐出部106の液流路を満た
している液体とを隔絶すると共に、液体を通じて電極1
13,114間が短絡するのを防止する、発熱抵抗層1
11の保護的機能を有している。The upper layer 112 fills the heat generation resistance layer 111 and the liquid flow paths of the liquid ejection unit 106 in order to chemically and physically protect the heat generation resistance layer 111 in the heat generation unit 108 from the liquid used. The electrode 1 that separates from the liquid and passes through the liquid
Heating resistance layer 1 for preventing short circuit between 13 and 114
It has 11 protective functions.
又、上部層112は、隣接する電極間に於ける電気的リ
ークを防止する役目も荷っている。殊に、各選択電極間
に於ける電気的リークの防止、或いは各液流路下にある
電極が何等かの理由で電極と液体とが接触し、これを通
電することによって起る電蝕の防止は、重要であって、
この為にこの様な保護層的機能を有する上部層112が
少なくとも液流路下に於ける電極上に設けられている。Further, the upper layer 112 also serves to prevent electrical leakage between the adjacent electrodes. In particular, prevention of electrical leakage between the selected electrodes, or the electrode under each liquid flow channel is contacted with the liquid for some reason, and the electrical corrosion caused by energizing this Prevention is important,
For this reason, the upper layer 112 having such a protective layer function is provided at least on the electrode under the liquid flow path.
更に、各液吐出部に設けられてある液流路は、各液吐出
部の上流に於いて、液流路の一部を構成する共通液室を
介して連通されているが、各液吐出部に設けられた電気
熱変換体に接続されている電極は、その設計上の都合に
より、熱作用部の上流側に於いて前記共通液室下を通る
様に設けられている。Further, the liquid flow paths provided in the respective liquid discharge parts are communicated with each other through a common liquid chamber which constitutes a part of the liquid flow paths upstream of the respective liquid discharge parts. The electrode connected to the electrothermal converter provided in the section is provided so as to pass under the common liquid chamber on the upstream side of the heat acting section due to its design convenience.
従って、この部分に於いても電極が液体と接触するのを
防止すべく前記した上部層が設けられているのが一般的
である。Therefore, even in this portion, the above-mentioned upper layer is generally provided in order to prevent the electrode from coming into contact with the liquid.
ところで、下部層110に要求される特性として、 a.発熱抵抗層の熱発生部に於いて発生する熱に耐え得
る耐熱性が良好なこと、 b.発熱抵抗層の熱発生部に於いて発生する熱の繰り返
しに耐え得る耐熱衝撃性が良好なこと、 c.下部層上に積層される発熱抵抗層並びに電極層とほ
ぼ同程度の熱膨張率をもつこと、 d.下部層上に積層される各層との密着性が良好なこ
と、 が主として重要である。これ等の特性が充分に満足され
る場合に液体噴射記録ヘッドは寿命が長く、高信頼性の
ものが得られるのである。加えて、液体噴射記録ヘッド
を作製する点から見た場合には、一般に発熱抵抗層はフ
ォトリソ工程により所望の形状に成されるのであるが、
下部層と発熱抵抗層とのエッチング速度比が充分に大き
くないと下部層の不要な部分がエッチングされたりサイ
ドエッチが生じたりして完成したヘッドの寿命が低下し
てしまうという問題もあり、下部層としては耐エッチン
グ性が大きいことも重要な特性の一つとして挙げられ
る。By the way, the characteristics required for the lower layer 110 are: a. Good heat resistance to withstand the heat generated in the heat generating portion of the heat generating resistance layer, b. Good thermal shock resistance capable of withstanding repeated heat generation in the heat generating portion of the heat generating resistance layer, c. Having a coefficient of thermal expansion that is substantially the same as that of the heating resistance layer and the electrode layer laminated on the lower layer, d. It is mainly important that the adhesiveness with each layer laminated on the lower layer is good. When these characteristics are sufficiently satisfied, the liquid jet recording head has a long life and high reliability. In addition, from the viewpoint of manufacturing a liquid jet recording head, generally, the heating resistance layer is formed into a desired shape by a photolithography process.
If the etching rate ratio between the lower layer and the heating resistance layer is not sufficiently large, unnecessary parts of the lower layer may be etched or side etching may occur, which may shorten the life of the completed head. The fact that the layer has high etching resistance is also mentioned as one of the important characteristics.
又、下部層の重要な役割の一つとして、発熱抵抗層が発
生する熱の制御がある。記録時に於いて、必要充分な熱
が液体側へ伝達されるとともに不要な熱は速やかに基板
側に逃がしてやる必要があり、この熱の制御が良好に行
なえないと電気熱変換体への電気信号の入力に対する応
答性が悪化したり、熱が蓄熱されて電気熱変換体等の液
体噴射記録ヘッドを構成するものを破壊したりという悪
影響が生ずる。特に、最近では階調記録性や高速記録性
が要求される為に応答性が高い液体噴射記録ヘッドを望
む声が大きい。この様な要求を満足する為には、記録ヘ
ッドを構成する基板として放熱性に優れた材質のものが
望まれている。更にその様な特性を持った基板を充分に
有効に機能させる為には熱伝導率の高い材料で下部層が
形成されていることが必要である。Further, one of the important roles of the lower layer is to control the heat generated by the heating resistance layer. At the time of recording, necessary and sufficient heat must be transferred to the liquid side, and unnecessary heat must be quickly released to the substrate side. If this heat cannot be controlled well, the electricity to the electrothermal converter can be removed. There are adverse effects such that the responsiveness to the input of a signal is deteriorated and that heat is accumulated to destroy a component that constitutes the liquid jet recording head such as an electrothermal converter. In particular, recently, since a gradation recording property and a high speed recording property are required, there is a great demand for a liquid jet recording head having high responsiveness. In order to satisfy such requirements, it is desired that the substrate constituting the recording head be made of a material having excellent heat dissipation. Further, in order for the substrate having such characteristics to function sufficiently effectively, it is necessary that the lower layer is formed of a material having high thermal conductivity.
併し乍ら、上記の特性を全て満足する材料は、未だ提案
されておらず、従来より液体噴射記録ヘッドの下部層に
好適に用いられることが知られているSiの熱酸化Si
O2においても耐エッチング性、特に高速記録にも好適
な液体噴射記録ヘッドの下部層としては熱膨張率、熱伝
導率等の点において充分に満足し得るものであるとはい
えない場合があった。従って、高速の記録を連続して長
時間行なう場合に、総合的な使用耐久性に優れる液体噴
射記録ヘッドは未だ提供されていないのが現状である。However, a material satisfying all of the above characteristics has not been proposed yet, and thermal oxidation of Si is known to be suitably used for a lower layer of a liquid jet recording head.
Etching resistance even in O 2, there may not be said to be particularly as the lower layer of a suitable liquid jet recording head in high-speed recording as it is capable of fully satisfactory thermal expansion coefficient, in terms of thermal conductivity and the like It was Therefore, under the present circumstances, a liquid jet recording head which is excellent in overall use durability is not yet provided when high-speed recording is continuously performed for a long time.
本発明は上記した様な従来の問題点に鑑み成されたもの
で、長寿命で信頼性が極めて高く、かつ高速応答性が良
好である液体噴射記録ヘッドを提供する事を目的とす
る。The present invention has been made in view of the above-mentioned conventional problems, and an object of the present invention is to provide a liquid jet recording head having a long life, extremely high reliability, and good high-speed response.
又、本発明は、製造加工上に於ける信頼性が高く、製造
工程上の歩留りが高く、液体の噴出特性にバラツキがな
い液体噴射記録ヘッドを提供する事も目的とする。Another object of the present invention is to provide a liquid jet recording head which has high reliability in the manufacturing process, high yield in the manufacturing process, and has no variation in the liquid jetting characteristics.
更に本発明は、上記した様な要求特性を充分に満足した
下部層が基板上に形成されている液体噴射記録ヘッドを
提供する事も目的とする。A further object of the present invention is to provide a liquid jet recording head in which a lower layer satisfying the above-mentioned required characteristics is formed on a substrate.
更に又、本発明はマルチオリフィス化した場合にも製造
歩留りが高く、信頼性の高い液体噴射記録ヘッドを提供
する事も目的とする。Another object of the present invention is to provide a highly reliable liquid jet recording head which has a high manufacturing yield even when a multi-orifice is used.
上記目的は、支持体と、該支持体上に形成された炭素ま
たは炭素を主成分とする下部層と、該下部層上にエッチ
ングによって所望パターンに形成された発熱抵抗層と該
発熱抵抗層に電気的に接続した一対の対置する電極とを
備えた電気熱変換体と、該電気熱変換体に対応した液流
路を構成する溝付板と、を有して構成されたことを特徴
とする液体噴射記録ヘッドによって達成される。The object is to provide a support, carbon or a lower layer containing carbon as a main component formed on the support, a heating resistance layer formed in a desired pattern on the lower layer by etching, and the heating resistance layer. An electrothermal converter having a pair of electrodes that are electrically connected to each other, and a grooved plate that forms a liquid flow path corresponding to the electrothermal converter, and Is achieved by a liquid jet recording head.
第2図(a)には、本発明の液体噴射記録ヘッドの好適
な実施態様例の構造の主要部を説明する為のオリフィス
側から見た正面図部分図が、第2図(b)には、第2図
(a)に一点鎖線AA′で示した部分で切断した場合の
切断面部分図が示されており、第2図(a)は、第1図
(a)に相当し、第2図(b)は第1図(b)に相当す
るものである。FIG. 2 (a) is a front view partial view seen from the orifice side for explaining the main part of the structure of the preferred embodiment of the liquid jet recording head of the present invention, and FIG. Shows a partial sectional view of a section taken along the chain line AA 'in FIG. 2 (a), and FIG. 2 (a) corresponds to FIG. 1 (a). FIG. 2 (b) corresponds to FIG. 1 (b).
図に示される液体噴射記録ヘッド200は、所望数の電
気熱変換体201が設けられた熱を液吐出に利用する液
体噴射記録用の基板(以下、単に基板と称する。)20
2と、前記電気熱変換体201に対応して設けられた溝
を所望数有する溝付板203とでその主要部が構成され
ている。A liquid jet recording head 200 shown in the figure has a substrate for liquid jet recording (hereinafter, simply referred to as a substrate) 20 provided with a desired number of electrothermal converters 201 and utilizing heat for liquid ejection.
2 and a grooved plate 203 having a desired number of grooves provided corresponding to the electrothermal converter 201, the main portion thereof is configured.
基板202と溝付板203とは、所定個所で接着剤等で
接合されることで基板202の電気熱変換体201の設
けられている部分と、溝付板203の溝の部分とによっ
て液流路204を形成しており、該液流眼204は、そ
の構成の一部に熱作用部205を有する。基板202
は、シリコン、ガラス、セラミックス等で構成されてい
る支持体206、該支持体206上に炭素又は炭素を主
成分とする下部層207、発熱抵抗層208、発熱抵抗
層208の表面の両側には、液流路204に沿って電極
209,210、及び発熱抵抗層208の電極で被覆さ
れていない部分と、電極209,210の部分とを覆う
様に無機質材料で構成された保護層211とを具備して
いる。電気熱変換体201は、その主要部として熱発生
部212を有し、熱発生部212は支持体206上に支
持体206側より順次発熱抵抗層208、上部層211
とが積層されて構成されており、上部層211の表面
(熱作用面)213は、液流路204中を満たす液体と
直に接触している。The substrate 202 and the grooved plate 203 are joined together at a predetermined position with an adhesive or the like, so that the portion of the substrate 202 where the electrothermal converter 201 is provided and the groove portion of the grooved plate 203 cause liquid flow. A channel 204 is formed, and the liquid eye 204 has a heat acting portion 205 as a part of its configuration. Board 202
Is a support 206 made of silicon, glass, ceramics or the like, carbon or a lower layer 207 containing carbon as a main component on the support 206, a heating resistance layer 208, and both sides of the surface of the heating resistance layer 208. The electrodes 209 and 210 and the portion of the heating resistance layer 208 not covered by the electrodes along the liquid flow path 204, and the protective layer 211 made of an inorganic material so as to cover the portions of the electrodes 209 and 210 are provided. It has. The electrothermal converter 201 has a heat generating part 212 as a main part thereof, and the heat generating part 212 is arranged on the support 206 in order from the support 206 side to the heat generating resistance layer 208 and the upper layer 211.
Are laminated, and the surface (heat-acting surface) 213 of the upper layer 211 is in direct contact with the liquid filling the liquid flow path 204.
第2図に示す液体噴射記録ヘッド200の場合には、上
部層211は、該層211の機械的な強度を一層高める
為に、層216、層217を設けた二重層構造とされて
いて、層216は、例えばSiO2等の無機酸化物やS
i3N4等の無機窒化物等の比較的電気絶縁性、及び耐
熱性に優れた無機質材料で構成され、層217は粘りが
あって、比較的機械的強度に優れ、層216に対して密
着性と接着性のある、例えば層216がSiO2で形成
されている場合にはTa等の金属材料で構成される。In the case of the liquid jet recording head 200 shown in FIG. 2, the upper layer 211 has a double-layer structure in which layers 216 and 217 are provided in order to further increase the mechanical strength of the layer 211. The layer 216 is made of, for example, an inorganic oxide such as SiO 2 or S.
The layer 217 is composed of an inorganic material such as i 3 N 4 or the like having relatively high electric insulation and heat resistance, and the layer 217 is tenacious and has relatively high mechanical strength. Adhesiveness and adhesiveness, for example, when the layer 216 is made of SiO 2 , it is made of a metal material such as Ta.
この様に第1の上部層211の表面層を金属等の比較的
粘りがあって機械的強度のある無機質材料で構成するこ
とによって、熱作用面213に於いて、液体吐出の際に
生ずるキャビテーション作用からのショックを充分吸収
することが出来、電気熱変換体201の寿命を格段に延
ばす効果がある。As described above, the surface layer of the first upper layer 211 is made of an inorganic material such as a metal having a comparatively tenacity and a mechanical strength, so that the cavitation generated at the time of liquid ejection on the heat acting surface 213. The shock from the action can be sufficiently absorbed, and the life of the electrothermal converter 201 can be significantly extended.
而乍ら、上部層211の表面層として設けられる層21
7は、本発明に於いては、必ずしも要するものではな
い。In addition, the layer 21 provided as the surface layer of the upper layer 211.
No. 7 is not always required in the present invention.
第1の上部層211を構成する材料としては、上記した
無機質材料の他に酸化チタン、酸化バナジウム、酸化ニ
オブ、酸化モリブデン、酸化タンタル、酸化タングステ
ン、酸化クロム、酸化ジルコニウム、酸化ハフニウム、
酸化ランタン、酸化イットリウム、酸化マンガン等の遷
移金属酸化物、更に酸化アルミニウム、酸化カルシウ
ム、酸化ストロンチウム、酸化バリウム、酸化シリコ
ン、等の金属酸化物及びそれらの複合体、窒化シリコ
ン、窒化アルミニウム、窒化ボロン、窒化タンタル等高
抵抗窒化物及びこれら酸化物、窒化物の複合体、更にア
モルファスシリコン、アモルファスセレン等の半導体な
どバルクでは低抵抗であってもスパッタリング法、CV
D法、蒸着法、気相反応法、液体コーティング法等の製
造過程で高抵抗化し得る薄膜材料を挙げることが出来、
その層厚としては一般に0.1μm〜5μm、好ましく
は0.2μ〜3μmとされるのが望ましい。As the material forming the first upper layer 211, in addition to the above-mentioned inorganic materials, titanium oxide, vanadium oxide, niobium oxide, molybdenum oxide, tantalum oxide, tungsten oxide, chromium oxide, zirconium oxide, hafnium oxide,
Transition metal oxides such as lanthanum oxide, yttrium oxide, and manganese oxide, as well as metal oxides such as aluminum oxide, calcium oxide, strontium oxide, barium oxide, and silicon oxide, and their composites, silicon nitride, aluminum nitride, boron nitride. , High-resistance nitrides such as tantalum nitride and composites of these oxides and nitrides, as well as semiconductors such as amorphous silicon and amorphous selenium, even if they have low resistance in bulk, sputtering method, CV
There can be mentioned thin film materials capable of achieving high resistance in the manufacturing process such as D method, vapor deposition method, gas phase reaction method, liquid coating method,
The layer thickness is generally 0.1 μm to 5 μm, preferably 0.2 μm to 3 μm.
発熱抵抗層208を構成する材料は、通電されることに
よって、所望通りの熱が発生するものであれば大概のも
のが採用され得る。As the material forming the heating resistance layer 208, almost any material can be adopted as long as it can generate desired heat when energized.
その様に材料としては、具体的に例えば窒化タンタル、
ニクロム、銀−パラジウム合金、シリコン半導体、或い
は、ハフニウム、ランタン、ジルコニウム、チタン、タ
ンタル、タングステン、モリブデン、ニオブ、クロム、
バナジウム等の金属の硼化物等が好ましてものとして挙
げられる。As such a material, specifically, for example, tantalum nitride,
Nichrome, silver-palladium alloy, silicon semiconductor, or hafnium, lanthanum, zirconium, titanium, tantalum, tungsten, molybdenum, niobium, chromium,
Preferred examples include borides of metals such as vanadium.
これ等の発熱抵抗層208を構成する材料の中、殊に金
属硼化物が優れたものとして挙げられることが出来、そ
の中でも最も特性の優れているのが硼化ハフニウムであ
り、次いで硼化ジルコニウム、硼化ランタン、硼化タン
タル、硼化バナジウム、硼化ニオプの順となっている。Among these materials forming the heating resistance layer 208, metal borides can be mentioned as particularly excellent ones, of which hafnium boride has the most excellent characteristics, and zirconium boride is next. The order is lanthanum boride, tantalum boride, vanadium boride, and niopide boride.
発熱抵抗層208は、上記した材料を使用して、電子ビ
ーム蒸着やスパッターリング等の手法を用いて形成する
ことが出来る。The heat generating resistance layer 208 can be formed by using the above-mentioned materials by a method such as electron beam evaporation or sputtering.
電極209と210を構成する材料としては、通常使用
されている電極材料の多くのものが有効に使用され、具
体的にいえば、Al,Au,Ag,Pt,Cu等の金属
が挙げられ、こら等を使用して蒸着等の手法で所望位置
に、所望の大きさ、形状、厚さで設けられる。下部層2
07は、主に熱発生部212より発生する熱の支持体2
06側への流れを制御する層として設けられるもので、
熱作用部205に於いて液体に熱エネルギーを作用させ
る場合には、熱発生部212より発生する熱が熱作用部
205側により多く流れるようにし、電気熱変換体20
1への通電がOFFされた際には、熱発生部212に残
存している熱が、支持体206側に速やかに流れる様
に、その層厚の設計が成される。As the material for forming the electrodes 209 and 210, many of the commonly used electrode materials are effectively used, and specifically, metals such as Al, Au, Ag, Pt, and Cu are mentioned. These are used to provide a desired size, shape, and thickness at a desired position by a technique such as vapor deposition. Lower layer 2
Reference numeral 07 denotes a support body 2 for heat generated mainly by the heat generating section 212.
It is provided as a layer that controls the flow to the 06 side,
When heat energy is applied to the liquid in the heat acting portion 205, a large amount of heat generated by the heat generating portion 212 is made to flow toward the heat acting portion 205 side, so that the electrothermal converter 20.
The layer thickness is designed so that the heat remaining in the heat generating portion 212 flows quickly to the support body 206 side when the energization to 1 is turned off.
本発明においては下層部207は炭素又は炭素を主成分
とする材料から成る層で構成される。より好ましくは炭
素原子を90atomic%以上含有する層とされる。
下部層207は、より好適にはダイヤモンドに類似した
特性を有する層で最適にはダイヤモンド構造を有する薄
膜或いはダイヤモンド構造を有する微結晶が含まれてい
る層とされる。この様な層は、CVD法、プラズマCV
D法、イオン化蒸着法、イオンビーム法、スパッタ法に
よって形成することができ、反応ガスとしては炭素原子
を含有するガス、より好ましくは炭化水素ガスが用いら
れ、具体的にはCH4ガスやC2H6ガスが好適に使用
される。又、上記ガス以外に水素ガスを混合したガスを
用いても良い。層形成時のチャンバー内の圧力は、層形
成法によっても異なるが、一般には好ましくは10−2
〜103Pa、より好ましくは10−2〜102Paと
され、支持体の温度は室温〜1000℃程度の範囲とさ
れるのが好ましい。In the present invention, the lower layer portion 207 is composed of a layer made of carbon or a material containing carbon as a main component. More preferably, it is a layer containing 90 atomic% or more of carbon atoms.
The lower layer 207 is more preferably a layer having properties similar to diamond, and most preferably a thin film having a diamond structure or a layer containing microcrystals having a diamond structure. Such layers are formed by CVD method, plasma CV
It can be formed by a D method, an ionization vapor deposition method, an ion beam method, or a sputtering method, and a gas containing a carbon atom, more preferably a hydrocarbon gas is used as a reaction gas. Specifically, CH 4 gas or C is used. 2 H 6 gas is preferably used. Further, a gas obtained by mixing hydrogen gas other than the above gases may be used. The pressure in the chamber during layer formation varies depending on the layer formation method, but is generally preferably 10 −2.
The temperature of the support is preferably in the range of room temperature to 1000 ° C., and is preferably 10 −3 Pa, more preferably 10 −2 to 10 2 Pa.
下部層207の層厚は、熱設計条件にもよるが、通常、
好ましくは1μm〜20μmより好ましくは1μm〜1
0μm、最適には1μm〜5μmとすることが望まし
い。Although the layer thickness of the lower layer 207 depends on the thermal design conditions, it is usually
Preferably 1 μm to 20 μm, more preferably 1 μm to 1
It is desirable that the thickness is 0 μm, optimally 1 μm to 5 μm.
溝付板203及び熱作用部205の上流側に設けられる
共通液室構成部材を構成する材料としては、記録ヘッド
の工作時の、或いは使用時の環境下に於いて形状に熱的
影響を受けないか或いは殆んど受けないものであって微
細精密加工が容易に適用され得ると共に面精度が所望通
りに容易に出、更には、そら等によって形成される流路
中を液体がスムーズに流れ得る様に加工し得るものであ
れば、大概のものが有効である。As a material forming the common liquid chamber constituent member provided on the upstream side of the grooved plate 203 and the heat acting portion 205, the shape is thermally influenced in the environment at the time of working the recording head or at the time of use. Since it does not or hardly receives it, fine precision processing can be easily applied, surface accuracy can be easily obtained as desired, and liquid flows smoothly in the flow path formed by such Most of them are effective as long as they can be processed to obtain them.
次に、第3図を用いて、炭素又は炭素を主成分とする下
部層、より具体的には炭素原子を90atomic%以
上含有する層であって、ダイヤモンドに類似した特性を
有し、CVD法、プラズマCVD法、イオン化蒸着法等
によって支持体上に形成される、が耐エッチング性が必
要である旨を説明する。第3図(a)は従来の下部層
(例えばSiO2)を用いた場合の記録ヘッドの電気熱
変換体の電極部分の模式的切断図、第3図(b)は本発
明による記録ヘッドの電気熱変換体の電極部分の模式的
切断面図である。Next, referring to FIG. 3, carbon or a lower layer containing carbon as a main component, more specifically, a layer containing 90 atomic% or more of carbon atoms, which has characteristics similar to diamond and has a CVD method. It will be described that the etching resistance is required for the film formed on the support by the plasma CVD method, the ionization deposition method, or the like. FIG. 3 (a) is a schematic sectional view of an electrode portion of an electrothermal converter of a recording head when a conventional lower layer (eg, SiO 2 ) is used, and FIG. 3 (b) shows a recording head according to the present invention. It is a typical sectional view of the electrode part of the electrothermal converter.
記録ヘッドを作製する際、下部層207の上部に設けら
れる発熱抵抗層208は上記した様な材料が一般に好適
に用いられるが、これ等材料は耐エッチング性に優れて
いる。このため、発熱抵抗層208の形状を所望の形状
とする為のパターン形成には通常、フッ酸と硝酸との混
合溶液等の溶解性の高いエッチング液が使用される。従
って下部層を207も発熱抵抗層208のパターン形成
にあたって侵触され第3図(a)に示される様に段差2
18が形成されてしまう。この段差218は、電極20
9及び発熱抵抗層208を保護する為に設けられる上部
層211を成膜する際、第3図(a)に図示される様に
ステップカバレージ不良である欠陥部219の発生要因
となる。この欠陥部219によって、上部層211上に
満たされる液体が浸透し、電極209や発熱抵抗層20
8と化学反応を生じ、電極209や発熱抵抗層208を
侵触する。この結果、従来の記録ヘッドは電極となる導
電層や発熱抵抗層が断線したり、発熱抵抗層208の発
熱によるたび重なる熱衝撃のために欠陥部219を切っ
掛けにしてクラックが発生し上部層211が剥離したり
して、寿命や信頼性を著しく低下させていた。When the recording head is manufactured, the heating resistance layer 208 provided on the lower layer 207 is generally made of the above-mentioned materials, and these materials have excellent etching resistance. For this reason, an etching solution having a high solubility such as a mixed solution of hydrofluoric acid and nitric acid is usually used for forming a pattern for forming the heating resistance layer 208 into a desired shape. Therefore, the lower layer 207 is also touched when forming the pattern of the heating resistance layer 208, and the step 2 is formed as shown in FIG.
18 is formed. This step 218 is defined by the electrode 20.
9 and the upper layer 211 provided to protect the heating resistance layer 208 are formed, they become a cause of generation of a defective portion 219 having a poor step coverage as shown in FIG. The liquid that fills the upper layer 211 permeates through the defective portion 219, and the electrode 209 and the heating resistance layer 20 are penetrated.
8 causes a chemical reaction with the electrode 8 and invades the electrode 209 and the heating resistance layer 208. As a result, in the conventional recording head, the conductive layer serving as an electrode or the heat generating resistance layer is broken, or due to repeated thermal shock due to the heat generation of the heat generating resistance layer 208, the defective portion 219 is struck and a crack is generated, and the upper layer 211. Was peeled off, which significantly reduced the life and reliability.
併し乍ら、下部層を本発明による炭素まはた炭素を主成
分とする材料の層とすることによって、下部層は発熱抵
抗層208のエッチングの際にもエッチング液に浸され
ず、従って段差や上部層211の形成の際生じていた欠
陥部219も発生せず第3図(b)に示される様に理想
的なパターン形成が行なえる。このことは、記録ヘッド
の高信頼性、高寿命にそのまま結びつく。However, when the lower layer is made of carbon or a material containing carbon as a main component according to the present invention, the lower layer is not soaked in the etching solution even when the heating resistor layer 208 is etched, so that steps or upper portions are not formed. The defect portion 219 generated during the formation of the layer 211 does not occur, and ideal pattern formation can be performed as shown in FIG. 3 (b). This directly leads to high reliability and long life of the recording head.
下部層にSiO2を用いた別の従来例では、エッチング
による段差218をできるだけ抑えるために、基板上の
発熱抵抗層208が所望の形状にエッチングされるとほ
とんど同時にエッチング液中からエッチングストッパー
中に基板を浸漬していた。併し乍ら、この様な処理を行
なう場合は、基板上の汚れ、エッチング中に発生するガ
ス、レジスト残渣、発熱抵抗層の膜厚や膜質等のバラツ
キによってパターンが所望等りに形成されず、不要な部
分が残ったり、その結果短絡部が生じていたりという問
題が発生して歩留りを低下させていた。本発明の下部層
を用いることによって、発熱抵抗層がほとんどエッチン
グされた後も冗長的にエッチング液中に基板を浸漬させ
ておけるため、前記問題による歩留りの低下は飛躍的に
解消することができる。In another conventional example in which SiO 2 is used for the lower layer, in order to suppress the step 218 due to etching as much as possible, when the heating resistor layer 208 on the substrate is etched into a desired shape, it is almost simultaneously removed from the etching solution into the etching stopper. The substrate was immersed. However, in the case of performing such a treatment, the pattern is not formed in a desired manner due to the contamination on the substrate, the gas generated during etching, the resist residue, the variation in the film thickness and the film quality of the heating resistance layer, and the unnecessary pattern is not needed. There is a problem that a part remains or a short circuit part is generated as a result, and the yield is reduced. By using the lower layer of the present invention, since the substrate can be redundantly dipped in the etching solution even after the heating resistance layer is almost etched, the decrease in yield due to the above problems can be dramatically eliminated. .
第4図は、基板202の熱応答性を、説明するための図
で液体へ熱エネルギーを付与する熱作用面の温度の時間
的変化を示す図である。第4図において、たて軸は、熱
作用面上の時間tにおける温度を、熱作用面上で液体が
発泡を開始する温度Tthで割った値が示される。通常
Tthは150〜250℃の範囲にある。横軸は熱作用
面にパルス信号が印加された時刻をOとして場合の時間
である。曲線Aは、支持体にアルミナ基板を用い、下部
層207をグレーズ層(40μm)とし、6μsのパル
ス信号を与えた場合の熱波形であり、Bは支持体をSi
とし、下部層を熱酸化SiO2(5μm)とし前記と同
様のパルス信号を与えた場合の熱波形を示す。さらに、
Cは、支持体をSiとし本発明の下部層(5μm)を用
いた場合の熱波形を示す。表記した結果から、SiO2
等の約0.002cal/sec・cm・℃のものから、
本発明の下部層の約1.0cal/sec・cm・℃に変
えることにより、従来より、熱の放熱性が格段に向上
し、熱応答性の優れる記録ヘッドを提供することが可能
となる。このため、高速駆動を行っても、基板の蓄熱が
発生することなく、印加電圧を一定として、記録を行う
ことが可能となる。FIG. 4 is a diagram for explaining the thermal responsiveness of the substrate 202 and is a diagram showing a temporal change of the temperature of the heat acting surface for applying heat energy to the liquid. In FIG. 4, the vertical axis shows a value obtained by dividing the temperature at the time t on the heat acting surface by the temperature Tth at which the liquid starts to foam on the heat acting surface. Usually, Tth is in the range of 150 to 250 ° C. The horizontal axis is the time when the time when the pulse signal is applied to the heat acting surface is O. A curve A is a thermal waveform when an alumina substrate is used as the support, the lower layer 207 is a glaze layer (40 μm), and a pulse signal of 6 μs is applied, and B is the support made of Si.
And the thermal waveform when the lower layer is thermally oxidized SiO 2 (5 μm) and a pulse signal similar to the above is given. further,
C shows a thermal waveform when Si is used as the support and the lower layer (5 μm) of the present invention is used. From the results shown, SiO 2
From about 0.002 cal / sec · cm · ° C, etc.,
By changing the lower layer of the present invention to about 1.0 cal / sec.cm.degree. C., it becomes possible to provide a recording head having a significantly improved heat dissipation property and a superior thermal response as compared with the conventional case. For this reason, even if high-speed driving is performed, heat can be stored in the substrate and recording can be performed with a constant applied voltage.
例えば前記Aの記録ヘッドの場合は、従来1.5KHz程
度の駆動周波数以上では、ドットサイズが変化し、印字
品位が低下する問題があった。また前記Bの記録ヘッド
の場合も、10KHz以上では同様な問題があったが、本
発明の記録ヘッドでは、20KHz以上でも十分に記録が
可能であった。第5図は、前記効果を説明するための図
で駆動周波数と吐出開始電圧との関係を示す図である。
たて軸は、低周波数側の吐出開始電圧Vth(周波数を
変化させても、吐出開始電圧が変化しない領域で測定し
た電圧)で、高周波数側の吐出開始電圧V・f(周波数
を変化した際、基板の蓄熱効果により液体の発泡開始電
圧が変化する周波数領域で測定した電圧)を割った値で
ある。For example, in the case of the A recording head, there is a problem that the dot size is changed and the printing quality is deteriorated at a driving frequency of about 1.5 KHz or higher. Also, in the case of the recording head of B, the same problem occurs at 10 KHz or higher, but the recording head of the present invention can sufficiently record at 20 KHz or higher. FIG. 5 is a diagram for explaining the above effect and is a diagram showing the relationship between the drive frequency and the ejection start voltage.
The vertical axis is the ejection start voltage Vth on the low frequency side (the voltage measured in the region where the ejection start voltage does not change even if the frequency is changed), and the ejection start voltage V · f on the high frequency side (the frequency is changed). At this time, it is a value obtained by dividing the voltage measured in the frequency region in which the foaming start voltage of the liquid changes due to the heat storage effect of the substrate.
これから、放熱性の高い本発明の記録ヘッドにおいては
高い周波数まで、蓄熱が発生せず、吐出開始電圧が一定
で、安定した記録が行なえることが示される。From this, it is shown that the recording head of the present invention having high heat dissipation does not generate heat up to a high frequency, the discharge start voltage is constant, and stable recording can be performed.
このことは、高速記録や多階調記録が可能な液体噴射記
録ヘッドを提供できるようになることを示す。This indicates that a liquid jet recording head capable of high-speed recording and multi-gradation recording can be provided.
また、本発明で用いられる下部層の他の物理的特性も従
来のSiO2と比べ格段に望ましいものとなっている。Further, the other physical properties of the lower layer used in the present invention are far more desirable than those of conventional SiO 2 .
本発明で用いられる下部層の熱膨張係数は1×10−6
〜5×10−6/℃程度であるため、支持体として好適
に用いられるSi(熱膨張係数2.5×10−6−3×
10−6/℃程度)や発熱抵抗層として好適に用いられ
るHfB2(熱膨張係数7.6×10−6/℃程度)と
の熱膨張係数の差が極めて少ない為(SiO2の熱膨張
係数は3.5×10−7〜5.5×10−7/℃程度)
各層の剥離やフクレの発生もなく、高信頼性を有する記
録ヘッドが提供される。The thermal expansion coefficient of the lower layer used in the present invention is 1 × 10 −6.
Since it is about 5 × 10 −6 / ° C., Si (coefficient of thermal expansion 2.5 × 10 −6 −3 ×), which is preferably used as a support, is used.
(About 10 −6 / ° C.) or HfB 2 (coefficient of thermal expansion of about 7.6 × 10 −6 / ° C.) which is preferably used as a heating resistance layer (due to a very small difference in thermal expansion coefficient (thermal expansion of SiO 2 The coefficient is about 3.5 × 10 −7 to 5.5 × 10 −7 / ° C.)
A recording head having high reliability without peeling of each layer or generation of blisters is provided.
尚、下部層は支持体の上部全面に設けられていても良い
が、記録ヘッドの高速応答性の向上を達成する為には少
なくとも電気熱変換体の熱発生部下に下部層が設けられ
ていれば良い。The lower layer may be provided on the entire upper surface of the support, but in order to improve the high-speed response of the recording head, the lower layer should be provided at least under the heat generating portion of the electrothermal converter. Good.
また、上部層は、2層構造とされたものを第2図におい
て示したが、上部層の目的を達成するのであれば1層構
成であっても何ら問題はない。あるいは、支持体、導電
層、発熱抵抗層が液体(インク)と化学反応を生じたり
することがなければ本発明の場合上部層は必ずしも必要
でない。更に、上部層を3層以上の構成としても熱エネ
ルギーが効果的に液体に伝達されるのであれば全くかま
わない。上部層が3層構成とされる場合の一例として、
支持体側からSiO2層、Ta層、有機樹脂層の順に積
層する場合がある。この場合の有機樹脂層は耐インク性
向上のために設けられる。Although the upper layer has a two-layer structure in FIG. 2, there is no problem even if it has a single-layer structure as long as the purpose of the upper layer is achieved. Alternatively, in the case of the present invention, the upper layer is not always necessary unless the support, the conductive layer and the heat generating resistance layer cause a chemical reaction with the liquid (ink). Further, even if the upper layer is composed of three or more layers, it does not matter if the heat energy is effectively transferred to the liquid. As an example of the case where the upper layer has a three-layer structure,
In some cases, a SiO 2 layer, a Ta layer, and an organic resin layer are laminated in this order from the support side. In this case, the organic resin layer is provided to improve ink resistance.
以下、本発明を実施例によって説明する。Hereinafter, the present invention will be described with reference to examples.
〈実施例〉 先ず、4インチウェハーSi支持体を清浄にした後、減
圧にし得るチャンバー内に収容した。その後、チャンバ
ー内を真空引きし、原料ガスとしてCH4ガスを水素ガ
スとともに導入し、チャンバー内を10−2〜103P
aに保ちながら電極間に高周波電圧(RFパワー3kw)
を印加し放電を生起させてプラズマ雰囲気を形成するこ
とで、支持体上に下部層としての炭素薄膜を5μm形成
した。<Example> First, a 4-inch wafer Si support was cleaned and then housed in a chamber capable of reducing the pressure. Then, the inside of the chamber is evacuated, CH 4 gas is introduced as a source gas together with hydrogen gas, and the inside of the chamber is 10 −2 to 10 3 P.
High frequency voltage (RF power 3kw) between electrodes while keeping at a
Was applied to generate a discharge to form a plasma atmosphere, thereby forming a carbon thin film of 5 μm as a lower layer on the support.
次に、上記炭素薄膜上に発熱抵抗層としてHfB2をR
Fスパッタにより2000Å形成し、引き続いて電極と
なる導電層としてEB蒸着法によりAlを1μm形成し
た。Next, HfB 2 was deposited as R on the carbon thin film as a heating resistance layer.
2000 Å was formed by F sputtering, and subsequently, 1 μm of Al was formed by an EB vapor deposition method as a conductive layer to be an electrode.
その後、フォトリソ工程を用いて所望の形状となる様に
導電層、(Al)をエッチングして電極を形成し、引き
続いててフォトリソ工程を用いて不要な部分の発熱抵抗
層(HfB2)をHF系のエッチング液によって除去す
ることで電気熱変換体を形成した。After that, a conductive layer and (Al) are etched to form a desired shape by a photolithography process to form an electrode, and subsequently, a heating resistance layer (HfB 2 ) of an unnecessary portion is HF by a photolithography process. An electrothermal converter was formed by removing it with a system etching solution.
尚、本実施例において、電気熱変換体はその発熱部分、
即ち、一対の対置する電極に挟持された発熱抵抗層部
分、の大きさを100μm×100μmとし、そのピッ
チを8個/mmとした。又、その時の抵抗値は80Ωであ
った。In the present embodiment, the electrothermal converter has a heat generating portion,
That is, the size of the heating resistance layer portion sandwiched between a pair of opposed electrodes was 100 μm × 100 μm, and the pitch was 8 pieces / mm. The resistance value at that time was 80Ω.
以上の様に作製された電気熱変換体を有する基板上にS
iO2層をスパッタリングにより1.9μm厚に、更に
Ta層をスパッタリングにより0.5μm厚に順次積層
して保護層(上部層)とし、基板は作製された。S is formed on the substrate having the electrothermal converter manufactured as described above.
The io 2 layer was sputtered to a thickness of 1.9 μm, and the Ta layer was sputtered to a thickness of 0.5 μm to form a protective layer (upper layer).
この基板上に感光性樹脂をラミネートした後、感光性樹
脂を所望のパターンに従って露光し、現像することで液
流路の壁面及び液室を形成した。更に、所望のパターン
をもって形成された上記の感光性樹脂硬化膜上にインク
供給口として1mの孔が2ケあけられたガラス板をイ
ンク供給口が液室部分になる様にして接合した。引続い
て、発熱抵抗体の先端とオリフィスとの距離が300μ
mとなるようにオリフィス端面を研摩して記録ヘッドを
作製した。After laminating a photosensitive resin on this substrate, the photosensitive resin was exposed and developed according to a desired pattern to form the wall surface of the liquid flow path and the liquid chamber. Further, a glass plate having two 1-m holes as ink supply ports was bonded on the above-described photosensitive resin cured film formed in a desired pattern so that the ink supply ports became the liquid chamber portion. Subsequently, the distance between the tip of the heating resistor and the orifice is 300μ.
A recording head was manufactured by polishing the end face of the orifice so that the recording head had a thickness of m.
この記録ヘッドに黒色染料とエタノールを主成分とする
インクを0.01気圧の背厚で熱作用部に供給しなが
ら、矩形電圧パルス印字信号を電気熱変換体に印加して
画像を記録し評価した。While supplying the ink containing black dye and ethanol as the main components to the heat-acting part with a thickness of 0.01 atm to this recording head, a rectangular voltage pulse print signal was applied to the electrothermal converter to record and evaluate the image. did.
その結果、長時間に亘る記録動作中においても液滴が不
吐出となることはなく、また、高周波数の電気的パルス
信号を入力させても記録されるドット径の差はほとんど
見られず終始安定した記録を行なうことができ。As a result, the liquid droplets will not be ejected even during the recording operation for a long time, and even if a high-frequency electric pulse signal is input, there is almost no difference in the recorded dot diameters, and it is possible to continue the operation. Stable recording can be performed.
加えて、高周波数の電気的パルス信号を入力させるとと
もに長時間に亘る記録を行なっても終始安定した記録を
行なうことができた。In addition, stable recording could be performed from beginning to end even when a high frequency electric pulse signal was input and recording was performed for a long time.
更に、インクを記録ヘッド内に充填したまま−30℃と
60℃の温度雰囲気中に記録ヘッドを放置し、熱衝撃を
加える試験を繰り返し行なったが、従来のSiO2を下
部層として用いた記録ヘッドにおいては不具合の出るも
のもある条件であっても本発明の実施例は基板に起因す
る不具合は全く見られなかった。Further, a test in which the recording head was left in an atmosphere of temperatures of −30 ° C. and 60 ° C. with the ink filled in the recording head and a thermal shock was repeated was repeated, but conventional SiO 2 was used as a lower layer for recording. Even in the condition that some defects occur in the head, no defects due to the substrate were found in the examples of the present invention.
以上、詳細に説明た様に、本発明によれば繰返し連続使
用に当っても下部層における蓄熱が生じず、熱放散性が
高くなる為高速記録及び多階調記録に適した液体噴射記
録ヘッドが提出される。As described above in detail, according to the present invention, the heat storage in the lower layer does not occur even after repeated continuous use, and the heat dissipation becomes high, so that the liquid jet recording head suitable for high-speed recording and multi-gradation recording is provided. Will be submitted.
又、本発明の下部層は高耐エッチング性を有する為、製
造工程における歩留まりが高く、また、高信頼性を有す
る液体噴射記録ヘッドが提供される。Further, since the lower layer of the present invention has high etching resistance, a liquid jet recording head having a high yield in the manufacturing process and high reliability is provided.
加えて、本発明によれば、下部層の熱膨張係数が該層と
接する他の材料の熱膨張係数と近い値を有するため、記
録動作を伴うたび重なる熱作用の繰り返しによる熱応力
にも充分に耐える高耐久、高寿命な液体噴射記録ヘッド
が提供される。In addition, according to the present invention, the coefficient of thermal expansion of the lower layer is close to the coefficient of thermal expansion of the other material in contact with the lower layer, which is sufficient for the thermal stress due to the repeated thermal action accompanying the recording operation. Provided is a liquid jet recording head which has high durability and long life.
第1図(a)は本発明に係わる液体噴射記録ヘッドを説
明する為の模式的正面部分図、第1図(b)は第1図
(a)に一点鎖線XYで示す部分で切断した場合の模式
的切断面部分図である。第2図(a)は本発明を説明す
る為の模式的正面部分図、第2図(b)は第2図(a)
に一点鎖線X′Y′で示す部分で切断した場合の模式的
切断面部分図である。第3図(a)は従来の記録ヘッド
の電極部分の模式的切断面図、第3図(b)は本発明の
電極部分の模式的切断面図である。第4図は熱作用面の
温度の時間的変化を示す図、第5図は駆動周波数と吐出
開始電圧との関係を示す図である。 103,206…支持体 110,207…下部層 111,208…発熱抵抗層 113,114,209,210…電極 112,211…上部層 101,200…記録ヘッド 104,203…溝付板FIG. 1 (a) is a schematic front partial view for explaining a liquid jet recording head according to the present invention, and FIG. 1 (b) is a sectional view taken along a dashed line XY in FIG. 1 (a). It is a typical cut surface partial view of. 2 (a) is a schematic front partial view for explaining the present invention, and FIG. 2 (b) is FIG. 2 (a).
FIG. 7 is a schematic sectional view partial view in the case of cutting at a portion indicated by a chain line X′Y ′ in FIG. FIG. 3A is a schematic sectional view of an electrode portion of a conventional recording head, and FIG. 3B is a schematic sectional view of an electrode portion of the present invention. FIG. 4 is a diagram showing a temporal change of the temperature of the heat acting surface, and FIG. 5 is a diagram showing a relationship between the driving frequency and the ejection start voltage. 103, 206 ... Supports 110, 207 ... Lower layers 111, 208 ... Heating resistance layers 113, 114, 209, 210 ... Electrodes 112, 211 ... Upper layers 101, 200 ... Recording heads 104, 203 ... Grooved plates
Claims (1)
た炭素または炭素を主成分とする下部層と、 該下部層上にエッチングによって所望パターンに形成さ
れた発熱抵抗層と該発熱抵抗層に電気的に接続した一対
の対置する電極とを備えた電気熱変換体と、 該電気熱変換体に対応した液流路を構成する溝付板と、 を有して構成されたことを特徴とする液体噴射記録ヘッ
ド。1. A support, a carbon or a lower layer containing carbon as a main component formed on the support, a heating resistance layer formed in a desired pattern on the lower layer by etching, and the heat generation. And an electrothermal converter having a pair of opposed electrodes electrically connected to the resistance layer, and a grooved plate forming a liquid flow path corresponding to the electrothermal converter. A liquid jet recording head characterized by:
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59152361A JPH064326B2 (en) | 1984-07-23 | 1984-07-23 | Liquid jet recording head |
US06/755,341 US4663640A (en) | 1984-07-20 | 1985-07-16 | Recording head |
DE19853525913 DE3525913A1 (en) | 1984-07-20 | 1985-07-19 | RECORDING HEAD |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59152361A JPH064326B2 (en) | 1984-07-23 | 1984-07-23 | Liquid jet recording head |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6131263A JPS6131263A (en) | 1986-02-13 |
JPH064326B2 true JPH064326B2 (en) | 1994-01-19 |
Family
ID=15538853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59152361A Expired - Lifetime JPH064326B2 (en) | 1984-07-20 | 1984-07-23 | Liquid jet recording head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH064326B2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0747871B2 (en) * | 1986-02-03 | 1995-05-24 | 川崎製鉄株式会社 | Structure of PC steel material |
JPH0745759B2 (en) * | 1987-07-01 | 1995-05-17 | 住友電気工業株式会社 | Double-coated unbonded PC steel |
EP1027727A1 (en) * | 1997-10-02 | 2000-08-16 | Merckle Gmbh | Diamond-based microactuator |
US6505914B2 (en) | 1997-10-02 | 2003-01-14 | Merckle Gmbh | Microactuator based on diamond |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5565476A (en) * | 1978-11-13 | 1980-05-16 | Nec Corp | Manufacture of field effect transistor |
JPS59106974A (en) * | 1982-12-11 | 1984-06-20 | Canon Inc | Liquid jet recording head |
-
1984
- 1984-07-23 JP JP59152361A patent/JPH064326B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6131263A (en) | 1986-02-13 |
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