JPH0641724A - Apparatus for production of transparent conductive film - Google Patents

Abstract

PURPOSE:To easily and efficiently produce a transparent conductive film having a low resistivity by rapidly cooling a substrate in a vacuum to a specific temp. after the formation of the transparent conductive film. CONSTITUTION:The substrate 11 and a target 14 are provided to face each other in a vacuum chamber 1. While the substrate 11 is kept at >=300 deg.C, the transparent conductive film is formed by a sputtering method on the substrate 11 by the plasma discharge generated between the substrate 11 and the target 14. A substrate cooling device 22 which rapidly cools the substrate 11 in the vacuum down to <=250 deg.C after the formation of the transparent conductive film is arranged in this apparatus for production of the transparent conductive film. This substrate cooling device 22 is arranged in a substrate take-out chamber 3 and is arranged to face the position where the substrate 11 passes. As a result, the transparent conductive film to be formed on the substrate is so formed that carrier electrons are not decreased by oxidation.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for producing a transparent conductive film, more specifically, a display element such as a liquid crystal,
The present invention relates to a transparent conductive film manufacturing apparatus for manufacturing an oxide transparent conductive film including an In-Sn-O-based transparent conductive film used as an electrode in a solar cell or the like.

[0002]

2. Description of the Related Art Conventionally, a coating method, a spray method, a vapor deposition method, a sputtering method and the like have been known as methods for producing a transparent conductive film of this type. Among these manufacturing methods, the sputtering method makes it easy to obtain a transparent conductive film having a relatively low resistance, and the transparent conductive film can be uniformly and reproducibly formed on a large-area substrate. Better than method. Further, as a mass-production sputtering apparatus for forming, for example, an In-Sn-O-based transparent conductive film (hereinafter referred to as an ITO film) used for liquid crystal or the like, a plurality of substrates are placed in a substrate holder in a vacuum chamber and processed for each batch. A batch sputtering apparatus for performing
An in-line sputtering apparatus is known in which a transparent conductive film is formed by a sputtering method while continuously feeding a substrate into the sputtering chamber from the atmosphere, and the transparent conductive film is continuously taken out.

The electric conductor of the ITO film is formed by two kinds of donors, that is, an additive ion (Sn ⁴ +) substituting the In site and oxygen deficiency (oxygen deficiency donor) due to the stoichiometric composition. When the ITO film is formed by the sputtering method, the film forming temperature has a great influence on the film characteristics. In general, increasing the film formation temperature improves the crystallinity of the film and promotes the ionization (Sn ⁴ +) of the additive element serving as a donor, which improves both the mobility and density of carrier electrons. As a result, the resistivity decreases.

Therefore, when the ITO film is formed directly on the glass substrate by the sputtering method or the ITO film is formed on the substrate having high heat resistance, the temperature of the substrate is raised to 300 ° C. or higher in the sputtering apparatus to form the film. Was there. Further, in any conventional sputtering apparatus, after the film formation, the substrate is taken out into the atmosphere while being in a high temperature state.

[0005]

However, in any conventional sputtering apparatus, since the ITO film is taken out into the atmosphere immediately after the ITO film is formed at a high temperature in any case, the high temperature I
There has been a problem that the TO film is exposed to air and is oxidized, and a low resistance film cannot be obtained. Because, when the ITO film formed on the substrate having a high temperature of 300 ° C. or higher is exposed to the atmosphere as it is, the ITO film is oxidized and the two donors disappear,
This is because the resistivity deteriorates.

The present invention solves the problems of the conventional sputtering apparatus, and when forming a transparent conductive film at a high temperature of 300 ° C. or higher, a transparent conductive film having a lower resistance can be obtained. It is an object of the present invention to provide a manufacturing apparatus of.

[0007]

A transparent conductive film manufacturing apparatus according to the present invention is provided with a substrate and a target in a vacuum chamber so as to face each other, and the substrate and the target are maintained while the substrate is held at 300 ° C. or higher. In a transparent conductive film manufacturing apparatus for forming a transparent conductive film on a substrate by a sputtering method by a plasma discharge generated between the substrates, the manufacturing apparatus is a substrate for rapidly cooling the substrate to 250 ° C. or less in vacuum after forming the transparent conductive film. It is characterized by having a cooling device.

[0008]

Since the apparatus for producing a transparent conductive film of the present invention is equipped with a cooling device for rapidly cooling the substrate to 250 ° C. or lower in a vacuum after the film formation, the substrate is kept at a temperature of 300 ° C. or higher by the sputtering method. The formed transparent conductive film can be rapidly cooled to 250 ° C. or lower, and even if taken out in the air, the transparent conductive film formed on the substrate does not cause reduction of carrier electrons due to oxidation. The resistivity of the film remains low.

[0009]

Embodiments of the present invention will be described with reference to the accompanying drawings.

FIG. 1 shows an apparatus 1 for producing a transparent conductive film according to the present invention.
An example is shown, and the illustrated example is a schematic view of a tray transfer type sputtering apparatus.
It is composed of a substrate loading chamber 2 and a substrate unloading chamber 3, and a valve 4 connects the substrate loading chamber 2, the sputtering chamber 1, and the substrate unloading chamber 3 in this order in order. The inside of the sputtering chamber 1 is connected via a valve 5 to a vacuum exhaust device 6 composed of a cryopump or the like, and the vacuum exhaust device 6 makes it possible to adjust the degree of vacuum in the sputtering chamber 1 and A gas flow pipe 7 communicating with the inside of the sputtering chamber 1 is used for mass flow control 8 by using a single gas or a mixed gas of a sputtering gas composed of, for example, argon gas and oxygen gas.
The nozzle 9 can be used to control the flow rate.

Further, the substrate holder 10 is provided in the sputtering chamber 1.
The substrate 11 held by the magnetron cathode 12 and the magnetron cathode 12 were placed in parallel with each other. And the substrate holder 10
Is arranged so that it can move in the sputtering chamber 1 while maintaining a parallel state with the magnetron cathode 12.
Although not shown, the substrate holder 10 is provided with a driving device for linearly moving as described above.
A sheath heater 13 for heating and controlling the temperature of the substrate 11 during film formation to a predetermined temperature is arranged behind the substrate 11.

A target 14 is fixed on the front surface of the magnetron cathode 12 with a brazing material, and a cathode case 16 accommodating an electromagnet 15 is arranged on the back surface of the magnetron cathode 12, and a direct current is supplied to the cathode case 16. A power supply 17 was connected, and a predetermined current was applied to the magnetron cathode 12 by the DC power supply 17 so that magnetron sputtering could be performed in the sputtering chamber 1.

After the substrate 11 is mounted on the substrate holder 10 on the substrate preparation chamber 2 side, a transparent conductive film is formed on the surface in the sputtering chamber 1, and the substrate 11 is subsequently taken out from the substrate taking-out chamber 3 side. It is like this.

Further, the substrate loading chamber 2 and the substrate unloading chamber 3 are each provided with a vacuum exhaust device 1 which is constituted by a cryopump or the like.
8 and 19 are connected via valves 20 and 21.

Although such a construction is not particularly different from the conventional transparent conductive film manufacturing apparatus, the apparatus of the present invention has the substrate cooling device 22 arranged in the substrate unloading chamber 3, and in the illustrated example, the substrate unloading chamber 3 is inside. A pair of substrate cooling devices 22 were arranged facing each other at the passage position of the substrate 11. Then, the substrate cooling device 2
Reference numeral 2 denotes a substrate 1 in which a liquid having a constant temperature (for example, constant temperature water having a temperature of 24 ° C.) is circulated in a substrate cooling device 22 through a circulation pipe 24 from a circulation pump 23 arranged outside the substrate unloading chamber 3.
1 can be cooled to a temperature of 250 ° C. or lower.

In the figure, reference numeral 25 is an attachment plate having a predetermined opening 26, 27 is a ground connected to the sputtering chamber 1, and
28 is a sputter gas supply source with a stop valve, 29 is a valve provided in the substrate preparation chamber 2, and 30 is a valve provided in the substrate unloading chamber 3.

Here, the process of film formation on a substrate will be briefly described using the transparent conductive film manufacturing apparatus of FIG.

First, the substrate holder 10 in the substrate preparation chamber 2
Then, the substrate 11 is held. The inside of the sputtering chamber 1 is evacuated by the vacuum exhaust device 6, and the inside of the substrate preparation chamber 2 is evacuated by the vacuum exhaust device 18.
Then, the inside of the substrate unloading chamber 3 is roughly evacuated and highly evacuated by the vacuum exhaust device 19. Then, after the substrate 11 is transferred into the sputtering chamber 1 which is evacuated to a high vacuum via the valve 4, the substrate 11 is heated by the sheath heater 13 to a temperature of, for example,
After heating to 0 ° C., a sputtering gas composed of an argon gas and an oxygen gas is introduced into the sputtering chamber 1 and adjusted to a predetermined pressure, and then sputtering is started. Then, the substrate 11 is passed over the magnetron cathode 12 at a constant speed, and a transparent conductive film having a predetermined thickness is formed on the substrate 11. After the film formation is completed, the sputtering gas is introduced, the sputtering is stopped, and the substrate 11 is removed from the substrate extraction chamber 3
After being transferred into the substrate via the valve 4, the substrate unloading chamber 3
Inside, the substrate cooling device 22 rapidly cools the substrate 11 to a temperature of 250 ° C. or less. Subsequently, after the substrate 11 is cooled to 250 ° C. or lower, air is introduced into the substrate unloading chamber 3 to return to atmospheric pressure, and then the substrate 11 is taken out from the substrate unloading chamber 3.

[0019] Although the degree of vacuum during film formation in a sputtering chamber 1 varies depending on the type of the transparent conductive film formed on the substrate, is generally 1 × 10 ^- and about ² Torr ^{- 3 ~1} × 10 do it. The degree of vacuum during cooling of the substrate after film formation varies depending on the type of the transparent conductive film formed on the substrate,
In general, 1 × 10 ^- it may be a ⁴ Torr about ^{- 5 ~1} × 10.

Next, using the device shown in FIG.
An example of manufacturing a Sn—O-based transparent conductive film (hereinafter referred to as an ITO film) will be described.

Experimental Example 1 In this experimental example, the substrate 11 has a length of 210 mm, a width of 210 mm, and a thickness of 1.
1 mm glass No. 7059 (manufactured by Corning) was used, and the target 14 was a sintered body target in which 10 wt% SnO ₂ was mixed with In ₂ O ₃ . The distance between the substrate 11 and the target 14 was set to 80 mm, the DC power supplied to the magnetron cathode 12 was 630 W, and the temperature of the substrate 11 was 450 ° C.

First, the substrate holder 10 in the substrate preparation chamber 2
After the substrate 11 is held on the substrate, the inside of the substrate preparation chamber 2 is evacuated by the vacuum exhaust system 18, the inside of the sputtering chamber 1 is evacuated by the vacuum exhaust system 6, and the inside of the substrate unload chamber 3 is evacuated by the vacuum exhaust system 19.
^- after setting ⁵ Torr, argon gas 5 × 10 introduced from a nozzle 8 into the sputtering chamber 1 ^- was set to ³ Torr.
Then, the substrate 11 is transferred from the substrate preparation chamber 2 into the sputtering chamber 1 through the valve 4 at a speed of 80 mm / min, and while passing over the magnetron cathode 12 in the sputtering chamber 1 at the speed, the magnetron sputtering method is performed for 1.25 minutes. A film was formed, and an ITO film having a film thickness of 1000 Å was formed on the substrate 11. During the film formation, the partial pressure of oxygen gas in the sputtering chamber 1 is 0 to 5 × 10.
^By optimizing the oxygen deficient donor in the ITO film formed by variously introducing it in the range of- ⁵ Torr, the conditions for minimizing the resistivity of the ITO film were obtained. The partial pressure of the oxygen gas to the result introduced 1 × 10 ^- was ⁵ Torr.

Subsequently, the substrate 11 on which the ITO film is formed in the sputtering chamber 1 is transferred into the substrate unloading chamber 3 via the valve 4, and in the substrate unloading chamber 3 the substrate 11 is cooled by the substrate cooling device 22.
After being rapidly cooled, air was introduced into the substrate unloading chamber 3, the inside of the substrate unloading chamber 3 was returned to atmospheric pressure, and the substrate 11 was taken out.

Then, the substrate cooling device 2 is placed in the substrate unloading chamber 3.
The temperature of the substrate 11 cooled by 2 was measured, and the temperature is shown in Table 1. In addition, the ITO formed on the substrate 11
The resistivity of the film was measured, and the results are shown in Table 1.

Comparative Experimental Example 1 After the substrate 11 on which the ITO film was formed was transferred into the substrate unloading chamber 3 in the sputtering chamber 1, air was immediately introduced into the substrate unloading chamber 3 without cooling the substrate 11. An ITO film was formed on the substrate 11 in the same manner as in Experimental Example 1 except that the substrate 11 was taken out from the substrate taking-out chamber 3 while being kept at a high temperature when the atmospheric pressure was reached.

After the ITO film is formed, the substrate 11 is transferred into the substrate unloading chamber 3 and the temperature of the substrate 11 is measured when the substrate unloading chamber 3 reaches the atmospheric pressure. The results are shown in Table 1. . Further, the resistivity of the ITO film formed on the substrate 11 was measured, and the results are shown in Table 1.

[0027]

[Table 1]

As is clear from Table 1, the resistivity of the ITO film of Experimental Example 1 in which the substrate was rapidly cooled after the film formation was 1.5 × 10 5.
^{- 4} a is whereas [Omega] cm, the resistivity of the ITO film of Comparative Example 1 was exposed to air without the substrate is cooled 2.
4 × 10 ^- it was ⁴ [Omega] cm. It is considered that this is because the number of carrier electrons decreased due to the oxidation of the ITO film exposed to the air due to the high temperature of the substrate of 340 ° C., resulting in the deterioration of the resistivity of the resulting ITO film. In addition, the substrate temperature is 230 ° C. when the substrate having the ITO film formed thereon is rapidly cooled by the substrate cooling device as in Experimental Example 1, while the substrate having the ITO film formed is exposed to the atmosphere as it is. In Example 1, the substrate temperature was as high as 340 ° C. Therefore, it was confirmed that the apparatus of the present invention can rapidly cool the substrate to lower the temperature to 250 ° C. or lower.

FIG. 2 shows another embodiment of the manufacturing apparatus of the present invention. The illustrated example is a schematic view of a batch processing type sputtering apparatus. The sputtering apparatus performs film formation on a substrate and quenching of the substrate. It is composed of a built-in sputtering chamber 31. Then, a polyhedral drum-shaped substrate holder 32 that rotates at a constant speed is provided in the sputtering chamber 31, a substrate 34 is set at a predetermined position of the substrate holder 32 through a valve 33, or the substrate 34 having a film formed thereon is removed. I made it available.

The inside of the sputter chamber 31 is connected to a vacuum exhaust device 36 such as a cryopump through a valve 35. The vacuum exhaust device 36 makes it possible to adjust the degree of vacuum in the sputter chamber 31, and A gas introduction pipe 37 communicating with the inside of the sputtering chamber 31 is used to introduce a sputtering gas composed of, for example, argon gas and oxygen gas from a nozzle 39 while controlling the flow rate of a single gas or a mixed gas with a mass flow control 38.

Further, the magnetron cathode 40 is arranged in parallel with the substrate 34 at a position where the substrate 34 held by the substrate holder 32 rotating in the sputtering chamber 31 passes, and at a position facing the substrate 34. A target 41 is fixed to the front surface of the magnetron cathode 40 with a brazing material, a cathode case 43 containing an electromagnet 42 is arranged on the back surface of the magnetron cathode 40, and a DC power source 44 is connected to the cathode case 43. Then, a predetermined current is applied to the magnetron cathode 40 by the DC power supply 44 so that magnetron sputtering can be performed in the sputtering chamber 31.

Further, a sheath heater 45 for heating the substrate 34 to a predetermined temperature is arranged at a position where the substrate 34 held by the substrate holder 32 rotating in the sputtering chamber 31 passes, and at a position facing the substrate 34. In the illustrated example, two sheath heaters 45 are arranged to face each other.

Further, a substrate cooling device 46 for cooling the substrate 34 is arranged at a position where the substrate 34 held by the substrate holder 32 rotating in the sputter chamber 31 passes, and at a position facing the substrate 34, and the sputtering is performed. A liquid of a constant temperature (for example, a temperature of 24
Substrate cooling device 4 through the circulation pipe 48
The substrate 34 was circulated in the chamber 6 so that the substrate 34 could be cooled to a temperature of 250 ° C. or lower. In the illustrated example, two substrate cooling devices 46 are arranged to face each other.

In the figure, reference numeral 49 is a deposition preventive plate provided with a predetermined opening 50, 51 is an earth connected to the sputter chamber 31, and 52 is a sputter gas supply source with a stop valve.

Here, a process of forming a film on a substrate will be briefly described by using the transparent conductive film manufacturing apparatus of FIG.

First, after the substrate 34 is held by the valve 33 at each predetermined position of the substrate holder 32 in the sputtering chamber 31, the substrate holder 32 is rotated at a constant speed.
Then, the interior of the sputtering chamber 31 is roughly evacuated and evacuated to a high vacuum by a vacuum exhaust device 36, and subsequently, a sputtering gas consisting of argon gas and oxygen gas is introduced into the highly evacuated sputtering chamber 31 to a predetermined pressure. After adjusting and heating the substrate 34 which rotates at a constant speed by the substrate holder 32 to a temperature of 400 ° C. by the sheath heater 45, the sputtering is started. Then, the substrate 34 is passed in front of the magnetron cathode 40 to form a transparent conductive film having a predetermined thickness on the substrate 34. When the film formation is completed, the heating and sputtering of the substrate 34 are stopped, and the substrate 34 rotated by the substrate holder 32 at a constant speed is rapidly cooled to 250 ° C. or less by the substrate cooling device 46. Board holder 3
When the film formation on each of the substrates 34 held at 2 and the cooling of the substrates are completed, the introduction of the sputtering gas is stopped, air is introduced into the sputtering chamber 31 to return to atmospheric pressure, and then the substrates 34 Is taken out from the sputtering chamber 31 via the valve 33.

[0037] Although the degree of vacuum in the film forming and cooling of the sputtering chamber 31 depends on the type of the transparent conductive film formed on the substrate, it is generally ^{1 × 10 - 3 ~1 × 10} -
It should be about ² Torr.

Next, using the device shown in FIG.
An example of manufacturing a Sn—O-based transparent conductive film (hereinafter referred to as an ITO film) will be described.

Experimental Example 2 In this experimental example, the substrate 34 has a length of 100 mm, a width of 100 mm, and a thickness of 1.
1 mm glass No. 7059 (manufactured by Corning Incorporated) was used, and the target 41 was a sintered body target in which 10 wt% SnO ₂ was mixed with In ₂ O ₃ . The distance between the substrate 34 and the target 41 was set to 60 mm, and the DC power supplied to the magnetron cathode 40 was 630 W.

First, after holding the substrates 34 (8 in the illustrated example) in the substrate holder 32, the substrate holder 32 is moved at a speed of 3
Rotated at 0 RPM. Then, a sputtering chamber 31 by the vacuum exhaust device 36 1 × 10 ^- after setting ⁶ Torr, argon gas 5 × 10 introduced from the nozzle 39 into the sputtering chamber 31 ^- was set to ³ Torr. Substrate 3 at the rotation speed
4, while sequentially passing the front of the sheath heater 45, when the substrate 34 is heated to a temperature of 400 ° C., it is applied to the magnetron cathode 40 to start sputtering, and while sequentially passing the front of the magnetron cathode 40, After forming a film by the magnetron sputtering method for 11 minutes and forming an ITO film having a film thickness of 1000 Å on each substrate 34, the substrate 3 is formed.
The heating of No. 4 and the sputtering were stopped. And oxygen gas in the sputtering chamber 31 during film formation the partial pressure 0 to 5 × 10 ^- resistivity of the ITO film with optimization of the oxygen-deficient donor ⁵ Torr various introduced ITO film formed in the range of The condition that minimizes is obtained. As a result, the partial pressure of oxygen gas introduced is 1 x 10
^- was ⁵ Torr.

Then, each substrate 34 on which the ITO film is formed
Each substrate 34 was rapidly cooled while sequentially passing through the front of the substrate cooling device 46 at the above rotation speed.

When the ITO film is formed on all of the substrates 34 held by the substrate holder 32 and the substrate 34 is cooled, the introduction of the sputtering gas is stopped and the sputtering chamber 31
Air is introduced into the inside of the sputtering chamber 31 to return it to the atmospheric pressure,
Each substrate 34 was taken out from the valve 33.

Then, the temperature of the substrate 34 cooled by the substrate cooling device 46 was measured, and the results are shown in Table 2.
Further, the resistivity of the ITO film formed on the substrate 34 was measured, and the results are shown in Table 2.

Comparative Experimental Example 2 The substrate 34 was prepared in the same manner as in Experimental Example 2 except that the substrate cooling device was not operated at all and air was immediately introduced into the sputtering chamber 31 immediately after the film formation to restore the atmospheric pressure. An ITO film was formed on top.

Then, immediately after the film formation, air was introduced into the sputtering chamber 31, and the temperature of the substrate 34 was measured when the atmospheric pressure was reached. The results are shown in Table 2. Further, the resistivity of the ITO film formed on the substrate 34 was measured, and the results are shown in Table 2.

[0046]

[Table 2]

As is clear from Table 2, the resistivity of the ITO film of Experimental Example 2 in which the substrate was rapidly cooled after the film formation was 1.6 × 10 5.
^{- 4} a is whereas [Omega] cm, the resistivity of the Comparative Example 2 of the ITO film was exposed to the air without the substrate is cooled 2.
8 × 10 ^- it was ⁴ [Omega] cm. It is considered that this is because the number of carrier electrons decreased due to the oxidation of the ITO film exposed to the air because the substrate had a high temperature of 360 ° C., and the resistivity of the resulting ITO film deteriorated. Further, as in Experimental Example 2, the substrate temperature was 230 ° C. when the substrate on which the ITO film was formed was rapidly cooled by the substrate cooling device, whereas the substrate on which the ITO film was formed was directly exposed to the atmosphere. In Example 2, the substrate temperature was as high as 360 ° C. Therefore, it was confirmed that the apparatus of the present invention can rapidly cool the substrate to lower the temperature to 250 ° C. or lower. In the apparatus shown in FIG. 2, the magnetron cathode 40 is arranged in one place in the sputtering chamber, but the present invention is not limited to this, and the number may be two or more according to the number of substrates held by the substrate holder 32. Further, in the apparatus shown in FIG. 2, the sheath heater 45 for heating the substrate 34 and the substrate cooling device 46 are arranged at two places each, but the present invention is not limited to this, and the number of substrates 34 held by the substrate holder 32 and the magnetron. The number of the cathodes 40 may be one, or three or more.
In the apparatus shown in FIG. 2, the heating device (sheath heater) for heating the substrate and the substrate cooling device for cooling the substrate are separate devices, but a substrate heating / cooling device incorporating both devices may be used.

In the apparatus of FIGS. 1 and 2, the power source for the power applied to the magnetron cathode is the DC power source, but the present invention is not limited to this, and the DC power source is the main power source and the high frequency power source is the sub power source. As a power source, high frequency power may be superimposed on DC power during sputtering.

In the above-mentioned Experimental Examples 1 and 2, a sintered compact target in which SnO ₂ was mixed with In ₂ O ₃ in an amount of 10 wt% was used as the target, but the amount of SnO ₂ mixed in In ₂ O ₃ was used instead of the target. Content of a sintered body target other than 10 wt%, In ₂ O ₃ , SnO ₂ , ZnO, CdO-S
When sputtering was performed using a target having nO ₂ or the like as a basic composition, the same results as in Experimental Examples 1 and 2 were obtained.
That is, the same effect can be obtained when an ITO film having a low resistivity can be produced in the production of an oxide transparent conductive film that obtains conductivity by using an oxygen-deficient donor.

[0050]

As described above, the transparent conductive film manufacturing apparatus of the present invention is provided with the substrate cooling device for rapidly cooling the substrate to 250 ° C. or lower in vacuum. Since it is cooled below, even if it is exposed to the atmosphere after that, the transparent conductive film formed on the substrate does not have a decrease in carrier electrons due to oxidation unlike the transparent conductive film manufactured by the conventional device, and thus has a low resistance. There is an effect that it is possible to provide an apparatus capable of easily and efficiently producing a transparent conductive film having a high rate.

[Brief description of drawings]

FIG. 1 is a schematic view of an embodiment of the device of the present invention,

FIG. 2 is a schematic view of another embodiment of the device of the present invention.

[Explanation of symbols]

1,31 vacuum chamber, 6,36 vacuum exhaust device,
11,34 substrate, 14,41 target,
13,45 Sheath heater, 22,46 Substrate cooling device.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Hisami Nakamura 523 Yokota, Yamatake-cho, Yamatake-gun, Chiba Pref.

Claims (1)

[Claims] 1. A transparent conductive film is sputtered on a substrate by arranging a substrate and a target in a vacuum chamber so as to face each other and maintaining the substrate at 300 ° C. or higher, by plasma discharge generated between the substrate and the target. In the manufacturing apparatus of the transparent conductive film formed by the method, the manufacturing apparatus, after forming the transparent conductive film,
An apparatus for producing a transparent conductive film, comprising a substrate cooling device for rapidly cooling a substrate to 250 ° C. or lower in vacuum.