JPH0640360B2 - Gas response device - Google Patents

Gas response device

Info

Publication number
JPH0640360B2
JPH0640360B2 JP60231350A JP23135085A JPH0640360B2 JP H0640360 B2 JPH0640360 B2 JP H0640360B2 JP 60231350 A JP60231350 A JP 60231350A JP 23135085 A JP23135085 A JP 23135085A JP H0640360 B2 JPH0640360 B2 JP H0640360B2
Authority
JP
Japan
Prior art keywords
gas detection
gas
detection element
trigger
detection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60231350A
Other languages
Japanese (ja)
Other versions
JPS6292098A (en
Inventor
崇 梶野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Cosmos Electric Co Ltd
Original Assignee
New Cosmos Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Cosmos Electric Co Ltd filed Critical New Cosmos Electric Co Ltd
Priority to JP60231350A priority Critical patent/JPH0640360B2/en
Publication of JPS6292098A publication Critical patent/JPS6292098A/en
Publication of JPH0640360B2 publication Critical patent/JPH0640360B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、極めて小さい電力で維持することができる
ガス応動装置に関するものである。
Description: TECHNICAL FIELD The present invention relates to a gas response device that can be maintained with extremely small electric power.

〔従来の技術〕[Conventional technology]

現在、実用化されているガス警報器は、ガス検知素子を
ガス検知感度、ガス応答特性等の問題により所定の高温
(例えば、メタン,プロパンの場合、300℃以上)に
保持する必要があり、消費電力が大きい。このため家庭
用ガス警報器においてはACコード、工業用検知警報器
の検知部については電力用ケーブルを必要とするため、
設置および取扱上不便な点が多い。
Gas alarm devices that are currently in practical use need to keep the gas detection element at a predetermined high temperature (for example, 300 ° C. or higher in the case of methane and propane) due to problems such as gas detection sensitivity and gas response characteristics. High power consumption. For this reason, a household gas alarm requires an AC cord, and an industrial detection alarm requires a power cable for the detection section.
There are many inconveniences in installation and handling.

これを改善するため、ガス検知素子以外の消費電力を小
さくしたり、ガス検知素子を間欠的に使用したり、パル
ス電源により電力効率を上げる等の手段がとられてい
る。
In order to improve this, measures such as reducing the power consumption other than the gas detecting element, intermittently using the gas detecting element, and increasing the power efficiency by a pulse power source are taken.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

これらの従来例においては、消費電力を小さくするとい
っても、限度があって所期に目的を達成できる程小さく
はならず、間欠的使用においてはガス検知素子のガス応
答特性の関係上、間欠頻度を多くする必要があり、した
がって、電池で駆動した場合、1年程度維持するのが限
度であるという問題点があった。
In these conventional examples, even though the power consumption is reduced, it does not become so small that the purpose can be achieved for the intended time, and in intermittent use, the gas response characteristic of the gas detection element causes the intermittent power consumption. It is necessary to increase the frequency, and therefore, there is a problem in that when the battery is driven, it is limited to be maintained for about one year.

この発明は、上記問題点を解決するためになされたもの
で、コードレス警報器の実現を可能とし、面倒な電源配
線あるいは高価なケーブ工事を不要にしたガス応動装置
を提供することを目的とする。
The present invention has been made to solve the above problems, and an object of the present invention is to provide a gas responsive device that enables the realization of a cordless alarm and that does not require troublesome power supply wiring or expensive cave construction. .

〔問題点を解決するための手段〕[Means for solving problems]

この発明は、ガス検知素子が所定の高温(以下高温とい
う)より低い温度(以下低温という)で使用した場合、
ガス応答特性,ガス検知感度等の特性の悪化をまねきな
がらもガス検知感度を有する点に着目し、常時は低温に
加熱し、低い濃度のガス(以下トリガガスという)を監
視させ、これを検出したときのみ、高温に加熱し、本来
の検知目的であるより高い濃度のガス(以下目的ガスと
いう)の監視、検出を行わせるものである。
This invention, when the gas sensing element is used at a temperature lower than a predetermined high temperature (hereinafter referred to as high temperature) (hereinafter referred to as low temperature),
Focusing on the fact that it has gas detection sensitivity while also deteriorating characteristics such as gas response characteristics and gas detection sensitivity, it was heated to a low temperature at all times, and a low concentration gas (hereinafter referred to as trigger gas) was monitored and detected. Only at this time, the gas is heated to a high temperature to monitor and detect a gas having a higher concentration (hereinafter referred to as a target gas), which is the original detection purpose.

この発明にかかる第1の発明は、低温でトリガガスの検
知を行う低温ガス検知素子を有するトリガガス検知回路
と、常時は周囲温度(以下常温という)におかれトリガ
ガス検知時に高温に加熱される高温ガス検知素子を有す
る目的ガス検知回路と、さらに、トリガガス検知回路の
出力で動作し、高温ガス検知素子を加熱する加熱手段と
からなるものである。
1st invention concerning this invention WHEREIN: The trigger gas detection circuit which has the low temperature gas detection element which detects a trigger gas at low temperature, and the high temperature gas which is normally kept at ambient temperature (henceforth normal temperature) and is heated to high temperature at the time of trigger gas detection. It is composed of a target gas detection circuit having a detection element, and a heating means which operates by the output of the trigger gas detection circuit and heats the high temperature gas detection element.

また、この発明にかかる第2の発明は、低温ガス検知素
子の役割と、高温ガス検知素子の役割を同一ガス検知素
子にて行わせるものである。
A second aspect of the present invention allows the same gas detecting element to perform the roles of the low temperature gas detecting element and the high temperature gas detecting element.

〔作用〕[Action]

この発明にかかる第1およひ第2の発明は、トリガガス
検知回路の低温ガス検知素子がトリガガスを検知したと
きのみ目的ガス検知回路を作動させ、高温ガス検知素子
を加熱して目的ガスを検知できる監視状態とするので、
常時は電力消費の極めて小さいトリガガス検知回路のみ
作動させるだけの電力で作動する。
1st and 2nd invention concerning this invention WHEREIN: Only when the low temperature gas detection element of a trigger gas detection circuit detects a trigger gas, a target gas detection circuit is operated and a high temperature gas detection element is heated and a target gas is detected. Since it is in a monitoring state that can
Normally, it operates with enough power to operate only the trigger gas detection circuit that consumes extremely little power.

〔実施例〕〔Example〕

第1図はこの発明にかかる第1の発明の一実施例を示す
ものである。この図で、eは低温ガス検知素子で、こ
こではガスを検知すると抵抗値が下がる半導体式ガス検
知素子を用いており、常時は電極eh−e間を流れる
電流のみで加熱されて低温に保たれる。
FIG. 1 shows an embodiment of the first invention according to the present invention. In this figure, e 1 is a low-temperature gas detection element, and here a semiconductor gas detection element whose resistance value decreases when gas is detected is used, and it is normally heated by only the current flowing between the electrodes eh-e 0 Kept in.

後述するように、低温ガス検知素子eは、低温でガス
を検知すると、ガスの放出特性が悪いため、この間定期
的に高温に加熱し、吸着ガスを放出(以下パージとい
う)して使用している。もちろん放出特性が問題となら
ない検知素子を低温ガス検知素子に使用した場合はこの
機能は不要である。Rは当該低温ガス検知素子の負荷
抵抗である。eは高温ガス検知素子で、常時は電力の
供給はなく、常温状態におかれ不作動であり、目的ガス
の検知が必要のときのみ加熱されて作動状態となる。e
は前記高温ガス検知素子eの補償素子であり、負荷
抵抗を兼ねる。ここでは、高温ガス検知素子eは補償
素子eの必要な接触燃焼式ガス検知素子を使用してい
る。Q,Qはトランジスタ、IC,ICは比較
増幅器であり、比較増幅器ICの非反転入力は負荷抵
抗器Rに接続され、低温ガス検知素子eの出力電圧
が入力され、反転入力は抵抗器R,Rに接続さ
れ、比較電圧Vが入力される。比較増幅器ICの非
反転入力は補償素子eに接続され、高温ガス検知素子
の出力電圧Vが入力され、反転入力は可変抵抗器VR
に接続され、比較電圧Vが入力される。R〜R
抵抗器、VRは可変抵抗器、Cはコンデンサ、LED
は発光ダイオード、Eは電源、TMはタイマ回路で、常
時は高レベル電圧を出力し比較増幅器ICの出力V
が高レベルとなってから起動し、一定時間毎にワンショ
ットの低レベル電圧をコンデンサCへ出力する。ま
た、DDはダイオード、Pは前記比較増幅器IC
出力端を示すノード、Pは接地電位点を示すノードで
ある。
As will be described later, when the low temperature gas detection element e 1 detects a gas at a low temperature, it has a poor gas emission characteristic. Therefore, the low temperature gas detection element e 1 is periodically heated to a high temperature during this period to release the adsorbed gas (hereinafter referred to as purge) before use. ing. Needless to say, this function is not necessary when a detection element whose emission characteristic does not matter is used as a low temperature gas detection element. R 1 is a load resistance of the low temperature gas detection element. e 2 is a high temperature gas detecting element, which is not supplied with electric power at all times and is inoperative at room temperature, and is heated and activated only when detection of the target gas is necessary. e
Reference numeral 3 denotes a compensating element for the high temperature gas detecting element e 2 , which also serves as a load resistance. Here, the high temperature gas detection element e 2 uses the catalytic combustion type gas detection element that requires the compensation element e 3 . Q 1, Q 1 is a transistor, IC 1, IC 2 are comparative amplifier, the non-inverting input of the comparison amplifier IC 1 'is connected to the load resistor R 1, the input is the output voltage V 1 of the cold gas sensing element e 1 The inverting input is connected to the resistors R 2 and R 3 , and the comparison voltage V 2 is input. The non-inverting input of the comparison amplifier IC 2 is connected to the compensating element e 3 , the output voltage V 4 of the high temperature gas detecting element is input, and the inverting input is the variable resistor VR.
And the comparison voltage V 5 is input. R 2 to R 7 are resistors, VR is a variable resistor, C 0 is a capacitor, LED
Is a light emitting diode, E is a power supply, and TM is a timer circuit, which constantly outputs a high level voltage and outputs V 3 of the comparison amplifier IC 1.
Becomes high level and is activated, and a one-shot low level voltage is output to the capacitor C 0 at regular intervals. Further, DD is a diode, P 1 is a node indicating the output terminal of the comparison amplifier IC 2 , and P 2 is a node indicating the ground potential point.

そして、Aはトリガガス検知回路で、e,R
,IC等で構成される。Bは目的ガス検知回路
で、e,e,R,R,VR,IC等で構成さ
れる。Cは加熱手段で、Q,R等で構成される。D
は警報表示回路でLED,R等で構成され、Fはパー
ジ回路でC,Q,eh等で構成される。
And A is a trigger gas detection circuit, e 1 , R 1 ~
It is composed of R 3 , IC 1, and the like. B is a target gas detection circuit, which is composed of e 2 , e 3 , R 5 , R 6 , VR, IC 2, and the like. C is a heating means, which is composed of Q 2 , R 4 and the like. D
Is an alarm display circuit composed of LEDs, R 7, etc., and F is a purge circuit composed of C O , Q 1 , eh, etc.

次に動作について説明する。Next, the operation will be described.

電源Eが投入されると、発光ダイオードLED,抵抗器
を通して、コンデンサCに充電電流が流れ発光ダ
イオードLEDを点灯させるとともにトランジスタQ
のベースに流れ込みトラナジスタQはオンとなり、低
温ガス検知素子eの電極兼ヒータehに電流が流れ同
素子を高温に加熱する。これにより低温ガス検知素子e
にパージがかかる。コンデンサCが充電されると充
電電流はなくなり、トランジスタQがオフし、パージ
は終了し発光ダイオードLEDは消灯する。低温ガス検
知素子eはヒータ電流による加熱がなくなり、電極間
eh−eの電流のみにより加熱され低温となる。
When the power supply E is turned on, a charging current flows through the capacitor C 0 through the light emitting diode LED and the resistor R 7 to turn on the light emitting diode LED and the transistor Q 1
The Toranajisuta Q 1 flows into the base turned on to heat the same element current flows into the electrode and the heater eh cold gas sensing element e 1 to a high temperature. As a result, the low temperature gas detection element e
1 is purged. When the capacitor C 0 is charged, the charging current disappears, the transistor Q 1 is turned off, the purge is completed, and the light emitting diode LED is turned off. The low-temperature gas detection element e 1 is no longer heated by the heater current, and is heated only by the current between the electrodes eh-e 0 to have a low temperature.

そして、トリガガスを検知しないとき低温ガス検知素子
の抵抗値は高く、電圧Vは比較電圧Vより低く
比較増幅器ICの出力Vは低レベルとなる。この間
トランジスタQのベース電流は遮断されQはオフの
状態を保ち、高温ガス検知素子eは電力が供給され
ず、常温状態におかれるとともに不作動状態である。
Then, when the trigger gas is not detected, the resistance value of the low temperature gas detection element e 1 is high, the voltage V 1 is lower than the comparison voltage V 2 , and the output V 3 of the comparison amplifier IC 1 is at a low level. During this time, the base current of the transistor Q 2 is cut off, Q 2 remains off, the high temperature gas detection element e 2 is not supplied with power, is kept at room temperature, and is inoperative.

トリガガスを低温ガス検知素子eが検知すると、低温
ガス検知素子eの抵抗値が下がり、出力電圧Vは上
昇し、比較電圧Vを超えると、比較増幅器ICの出
力Vは高レベルとなる。すなわち、トリガガス検知回
路Aから加熱手段Cへ出力が出る。またこのときタイマ
回路TMが起動される。トランジスタQは抵抗器R
を通じてベース電流が流れオンとなり、目的ガス検知回
路Bには電源EからトランジスタQを通じて電力が供
給され、高温ガス検知素子eおよび補償素子eは高
温に加熱され、作動状態となる。この時、目的ガスがな
い場合、比較電圧Vは高温ガス検知素子eの出力V
より低く初期的に不変抵抗器VRにより設定されてい
るため比較増幅器ICの出力Vは高レベルとなって
いる。
When the low temperature gas detection element e 1 detects the trigger gas, the resistance value of the low temperature gas detection element e 1 decreases, the output voltage V 1 increases, and when the comparison voltage V 2 is exceeded, the output V 3 of the comparison amplifier IC 1 becomes high. It becomes a level. That is, the trigger gas detection circuit A outputs an output to the heating means C. At this time, the timer circuit TM is activated. The transistor Q 2 is a resistor R 4
Then, the base current flows through the device and turns on, power is supplied from the power source E to the target gas detection circuit B through the transistor Q 2 , and the high temperature gas detection element e 2 and the compensating element e 3 are heated to a high temperature and brought into an operating state. At this time, when there is no target gas, the comparison voltage V 5 is the output V of the high temperature gas detection element e 2 .
Since it is lower than 4 and is initially set by the invariable resistor VR, the output V 0 of the comparison amplifier IC 2 is at a high level.

高温ガス検知素子eが目的ガスを検知すれば、出力電
圧Vは低下し比較電圧Vより低くなると、比較増幅
器ICの出力Vは低レベルとなり、つまり、ノード
がノードPと同じ接地電位になる(具体的には比
較増幅器ICの図示されていない接地端子とノードP
とが接続される)ので、コンデンサCに充電されて
いる電荷は、ノードP,Pから発光ダイオードDD
を経て放電する。一方、発光ダイオードLEDと抵抗器
の直列回路の両端に電源Eの電圧を印加して発光ダ
イオードLEDを点灯させ警報を表示する。目的ガスが
なくなれば出力電圧Vは比較電圧Vより高くなり、
比較増幅器ICの出力Vは高レベルへ復帰し、発光
ダイオードLEDは消灯する。コンデンサCは充電を
開始し、トランジスタQのベースに充電電流が流れこ
れをオンし、低温ガス検知素子eにヒータ電流を流し
高温に加熱し、パージをかける。これによりガス応答特
性の緩慢な低温ガス検知素子eの吸着ガスは放出され
る。コンデンサCの充電完了とともにトランジスタQ
はオフし、低温ガス検知素子eはヒータ電流による
加熱がなくなり低温状態へ戻る。また目的ガスがなく、
比較増幅器ICの出力が高レベルの間、タイマ回路T
Mから一定時間毎にワンショットの低レベル電圧が出る
から、すなわち、一定時間毎にノードPがノードP
と同じ接地電位になるので、前述した比較器ICから
低レベル電圧が出る場合と全く同じ状態となり、この周
期でコンデンサCの放充電とともに低温ガス検知素子
にパージがかかる。すなわち同素子に一定のガス放
出特性をもたせ、トリガガス検知と目的ガス検知回路B
を有効に作動させる。
When the high temperature gas detecting element e 2 detects the target gas, the output voltage V 4 decreases and becomes lower than the comparison voltage V 5 , the output V 0 of the comparison amplifier IC 2 becomes low level, that is, the node P 1 changes to the node P 1. 2 becomes the same ground potential (specifically, a ground terminal (not shown) of the comparison amplifier IC 2 and the node P
Since 1 and are connected), the electric charge charged in the capacitor C 0, the light emitting diode DD from node P 1, P 2
To discharge. On the other hand, the voltage of the power source E is applied to both ends of the series circuit of the light emitting diode LED and the resistor R 7 to light the light emitting diode LED and display an alarm. If the target gas disappears, the output voltage V 4 becomes higher than the comparison voltage V 5 ,
The output V 0 of the comparison amplifier IC 2 returns to the high level, and the light emitting diode LED is turned off. The capacitor C 0 starts charging, and a charging current flows through the base of the transistor Q 1 to turn it on, and a heater current is supplied to the low temperature gas detection element e 1 to heat it to a high temperature and purge it. As a result, the adsorbed gas of the low temperature gas detection element e 1 having a slow gas response characteristic is released. Upon completion of charging the capacitor C 0, the transistor Q
1 is turned off, and the low temperature gas detection element e 1 is no longer heated by the heater current and returns to the low temperature state. There is no target gas,
While the output of the comparison amplifier IC 1 is high level, the timer circuit T
Since a one-shot low-level voltage is output from M at regular time intervals, that is, the node P 1 changes to the node P 2 at constant time intervals.
Since it becomes the same ground potential as the above, the state becomes exactly the same as when the low level voltage is output from the comparator IC 2 described above, and the low temperature gas detection element e 1 is purged along with the discharge of the capacitor C 0 in this cycle. That is, the same element is provided with a constant gas release characteristic, and the trigger gas detection and target gas detection circuit B is performed.
To operate effectively.

トリガガスがなくなれば低温ガス検知素子eの出力V
は比較電圧Vより小さくなり、比較増幅器IC
出力Vが低レベル、トランジスタQがオフとなり、
目的ガス検知回路Bは再び不作動状態におかれ、トリガ
ガス検知回路Aのみがトリガガスの監視を続行する。
If the trigger gas is exhausted, the output V of the low temperature gas detection element e 1
1 becomes smaller than the comparison voltage V 2, the output V 3 of the comparison amplifier IC 1 is low level, the transistor Q 2 is off,
The target gas detection circuit B is again deactivated and only the trigger gas detection circuit A continues to monitor the trigger gas.

このようにして、低温ガス検知素子eがガスを検知
し、トリガガス検知回路Aから出力が出たときのみ、加
熱手段Cを作動させて高温ガス検知素子eを加熱して
目的ガス検知回路Bを作動可能な状態とし、目的ガスが
なく、トリガガスを検知している間は低温ガス検知素子
に定期的にパージをかけトリガガスの検知をより有
効に行う。
In this way, only when the low temperature gas detection element e 1 detects gas and the trigger gas detection circuit A outputs, the heating means C is operated to heat the high temperature gas detection element e 2 and the target gas detection circuit. While B is in an operable state and there is no target gas and the trigger gas is being detected, the low temperature gas detection element e 1 is regularly purged to more effectively detect the trigger gas.

第2図はこの発明にかかる第2の発明の一実施例を示す
もので、ガス検知素子eの1個を用いて、第1図の実施
例の低温検知素子eと高温ガス検知素子eとを兼用
させたものである。つまり、ガス検知素子eは、第1図
の低温検知素子eと構造や組成は同じであるが、後述
するように、加熱が高低の2つに分かれて行なわれるも
のである。
FIG. 2 shows an embodiment of the second invention according to the present invention. Using one of the gas detecting elements e, the low temperature detecting element e 1 and the high temperature gas detecting element e of the embodiment of FIG. 1 are used. It is also used as 2 . That is, the gas detection element e has the same structure and composition as the low temperature detection element e 1 of FIG. 1 , but as described later, heating is divided into high and low heating.

ガスを検知すると抵抗値が小さくなる特性の熱線型半導
体式ガス検知素子を用いている。回路構成は第1図の実
施例と相違しているところもあるが各部の名称は同じで
ある。
A hot-wire type semiconductor gas detection element having a characteristic that its resistance value becomes small when gas is detected is used. The circuit configuration is different from that of the embodiment shown in FIG. 1, but the names of the respective parts are the same.

その動作について説明すると、電源Eが投入されると発
光ダイオードLED、抵抗器Rを通して、コンデンサ
に充電電流が流れ、発光ダイオードLEDを点灯さ
せるとともに、トランジスタQのベースに流れ込みト
ランジスタQはオンとなり、トランジスタQのベー
ス電流は遮断されオフとなり、ヒータ電流は流れず、ガ
ス検知素子eの電極間eh−eの電流のみにより加熱
され、低温ガス検知素子(以下状態により検知素子の名
称を使い分ける)として作動する。
To explain its operation, the light emitting diode LED power supply E is turned on, the resistor through R 7, a charging current flows into the capacitor C 0, along with lighting the light emitting diodes LED, a transistor Q 2 flows into the base of the transistor Q 2 Is turned on, the base current of the transistor Q 1 is cut off and turned off, the heater current does not flow, the heater is heated only by the current between the electrodes eh-e 0 of the gas detection element e, and the low temperature gas detection element (detection element depending on the state below is used. It uses as the name).

トリガガスを検知しないとき低温ガス検知素子の出力V
は比較電圧Vより低く抵抗器R,Rにより設定
されているため比較増幅器ICの出力Vは低レベル
であり、コンデンサCの充電が完了した後、発光ダイ
オードLEDが消灯し、トランジスタQがオフとなっ
てもトランジスタQのベース電流は遮断されるため、
この状態は保持される。
Output V of low temperature gas detection element when trigger gas is not detected
Since 1 is lower than the comparison voltage V 2 and set by the resistors R 3 and R 4 , the output V 3 of the comparison amplifier IC 1 is at a low level, and after the charging of the capacitor C 0 is completed, the light emitting diode LED is turned off. However, since the base current of the transistor Q 1 is cut off even when the transistor Q 2 is turned off,
This state is retained.

トリガガスを低温ガス検知素子eが検知するとその抵抗
値が低くなり、出力電圧Vが比較電圧Vを超えると
比較増幅器ICの出力Vは高レベル電圧となりトラ
ンジスタQをオンとし、電極兼ヒータehに電流を流
して低温ガス検知素子e加熱し高温とする。これにより
同素子は高温ガス検知素子として作動する。またタイマ
ー回路TMが起動される。
When the low temperature gas detection element e detects the trigger gas, its resistance value becomes low, and when the output voltage V 1 exceeds the comparison voltage V 2 , the output V 3 of the comparison amplifier IC 1 becomes a high level voltage and the transistor Q 1 is turned on, and the electrode Also, an electric current is passed through the heater eh to heat the low temperature gas detection element e to a high temperature. As a result, the element operates as a hot gas detecting element. Further, the timer circuit TM is activated.

温度が上がり、高温ガス検知素子eの抵抗値は低温で作
動していた時より低くなるため、出力電圧Vはさらに
上昇しトランジスタQがオン状態を維持することで高
温ガス検知素子としての作動状態が維持される。
Since the temperature rises and the resistance value of the high temperature gas detecting element e becomes lower than that when operating at a low temperature, the output voltage V 1 further rises and the transistor Q 1 maintains the ON state, whereby the high temperature gas detecting element e The operating state is maintained.

目的ガスがない場合、高温ガス検知素子eの出力V
比較電圧Vより低く可変抵抗器VRにより設定されて
いるため、比較増幅器ICの出力は高レベルであり、
LEDは消灯している。
When there is no target gas, the output V 4 of the high temperature gas detection element e is lower than the comparison voltage V 5 and is set by the variable resistor VR, so the output of the comparison amplifier IC 2 is at a high level,
The LED is off.

目的ガスの検知により電極兼ヒータehのa,b間の抵
抗値が下がり、出力電圧Vが比較電圧Vを超えると
比較増幅器ICの出力は低レベルとなる。つまり、ノ
ードPがノードPと同じ接地電位にになる(具体的
には比較増幅器ICの図示されていない接地端子とノ
ードPとが接続される)ので、コンデンサCに充電
されている電荷は、ノードP,PからダイオードD
Dを経て放電する。一方、発光ダイオードLEDと抵抗
器Rの直列回路の両端に電源Eの電圧を印加して発光
ダイオードLEDは点灯し警報表示を行う。
When the target gas is detected, the resistance value between a and b of the electrode / heater eh decreases, and when the output voltage V 4 exceeds the comparison voltage V 5 , the output of the comparison amplifier IC 2 becomes low level. That is, since the node P 1 has the same ground potential as the node P 2 (specifically, the ground terminal (not shown) of the comparison amplifier IC 2 and the node P 1 are connected), the capacitor C 0 is charged. The electric charge that is generated is from the nodes P 1 and P 2 to the diode D.
It discharges via D. On the other hand, the voltage of the power supply E is applied to both ends of the series circuit of the light emitting diode LED and the resistor R 7 , and the light emitting diode LED is turned on to display an alarm.

目的ガスがなくなり、比較増幅器ICの出力が“高”
レベルに復帰すると、コンデンサCの充電電流がトラ
ンジスタQのベースに流れトランジスタQをオンに
し、トランジスタQはオフとなり電極兼ヒータehの
電流は流れなくなり、高温ガス検知素子eは低温ガス検
知素子eへ移行する。また、目的ガスを検知しない場合
には、比較増幅器ICの出力が高レベルの間、タイマ
回路TMから一定時間毎にワンショットの低レベル電圧
が出るから、この周期でコンデンサCの放充電、トラ
ンジスタQのオン,オフとともにトランジスタQ
定期的にオフ、すなわち、高温ガス検知素子eのヒータ
電流を遮断し、低温ガス検知素子として作動させる。こ
のとき、トリガガスの検知がなければ比較増幅器IC
の出力Vは低レベルとなり、トランジスタQのオ
フ、ヒータ電流の遮断が続けられ、低温ガス検知素子e
としての作動状態へ復帰する。
The target gas is exhausted, and the output of the comparison amplifier IC 2 is "high".
After returning to level, the flow transistor Q 2 turns on the charging current of the capacitor C 0 is the base of the transistor Q 2, the transistor Q 1 is longer flows current becomes the electrode and the heater eh off, the hot gas sensing element e is cold gas The process moves to the detection element e. When the target gas is not detected, the one-shot low-level voltage is output from the timer circuit TM at regular intervals while the output of the comparison amplifier IC 1 is at a high level. Therefore, the capacitor C 0 is discharged and charged in this cycle. The transistor Q 1 is turned off at the same time as the transistor Q 2 is turned on and off, that is, the heater current of the high temperature gas detection element e is cut off to operate as a low temperature gas detection element. At this time, if the trigger gas is not detected, the comparison amplifier IC 1
Output V 3 becomes low level, and the transistor Q 1 is kept off and the heater current continues to be cut off.
Return to the operating state as.

なお、上記におけるトリガガスは目的ガスの低濃度のも
のであることはもちろん各種のガス、水蒸気等をも含む
使い方ができるものはもちろんである。また、ガス検知
素子e,e,e等は前述したガス検知素子のみなら
ず他の種類のガス検知素子であってもよい。
The trigger gas in the above is not only a low concentration of the target gas, but of course, it can be used including various gases and water vapor. Further, the gas detection elements e 1 , e 2 , e, etc. may be not only the gas detection elements described above but also other types of gas detection elements.

〔発明の効果〕〔The invention's effect〕

この発明にかかる第1および第2の発明は以上詳細に説
明したように、トリガガス検知回路と、目的ガス検知回
路とを備え、常時は消費電力の少ないトリガガス検知回
路のみ作動状態としておき、トリガガスを検知したとき
のみ消費電力の大きい目的ガス検知回路を作動させるよ
うにしたので、従来のように、ガスがない時に消費して
いた無駄な電力を大幅に節減することができる。
As described in detail above, the first and second inventions according to the present invention are provided with the trigger gas detection circuit and the target gas detection circuit, and normally, only the trigger gas detection circuit that consumes less power is activated and the trigger gas is removed. Since the target gas detection circuit that consumes a large amount of power is operated only when it is detected, it is possible to significantly reduce the wasted power consumed when there is no gas, as in the conventional case.

またガス雰囲気の存在するときトリガガス検知により目
的ガス検知回路が頻度高く応動し、ガス雰囲気がないと
きは動作しないというガス応動装置として極めて合理的
な動作となる。
Further, the target gas detection circuit responds frequently by the trigger gas detection in the presence of the gas atmosphere, and does not operate in the absence of the gas atmosphere, which is a very rational operation as a gas response device.

そして、高温ガス検知素子が高温になる時間は従来にく
らべて格段と短時間となるため、その疲労を軽減でき、
飛躍的に寿命を延ばすことができる。
And since the time for the high temperature gas detection element to reach a high temperature is much shorter than before, it is possible to reduce fatigue.
The life can be dramatically extended.

また、電源としての電池寿命は5年以上もたせることが
可能となる。
Further, the battery life as a power source can be extended to 5 years or more.

さらに、第2の発明においては、トリガガス検知時の低
温ガス検知素子のガス放出特性が問題とならないこと
と、1個のガス検知素子を使用しているため目的ガス検
知時、トリガガス検知時の消費電力が小さく、電池を電
源とした場合の寿命をさらに、延ばせること、また、電
気回路の簡単化などに大きな利点をもつ。
Further, in the second invention, the gas emission characteristic of the low temperature gas detecting element at the time of detecting the trigger gas does not pose a problem, and since one gas detecting element is used, the consumption at the time of detecting the target gas and the time of detecting the trigger gas is reduced. It has a great advantage in that the electric power is small, the life when the battery is used as a power source can be further extended, and the electric circuit is simplified.

【図面の簡単な説明】[Brief description of drawings]

第1図はこの発明の一実施例を示す回路図、第2図はこ
の発明の第2の発明の一実施例を示す回路図である。 図中、eはガス検知素子、eは低温ガス検知素子、e
は高温ガス検知素子、eは補償素子、Q,Q
トランジスタ、IC,ICは比較増幅器、R〜R
11は抵抗器、VRは可変抵抗器、Cはコンデンサ、
LEDは発光ダイオード、Eは電源、Aはトリガガス検
知回路、Bは目的ガス検知回路、Cは加熱手段である。
FIG. 1 is a circuit diagram showing an embodiment of the present invention, and FIG. 2 is a circuit diagram showing an embodiment of the second invention of the present invention. In the figure, e is a gas detection element, e 1 is a low temperature gas detection element, e
2 is a high temperature gas detection element, e 3 is a compensation element, Q 1 and Q 2 are transistors, IC 1 and IC 2 are comparison amplifiers, and R 1 to R
11 is a resistor, VR is a variable resistor, C 0 is a capacitor,
LED is a light emitting diode, E is a power supply, A is a trigger gas detection circuit, B is a target gas detection circuit, and C is a heating means.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】低温でガス検知を行う低温ガス検知素子を
有し、当該低温ガス検知素子が低濃度ガスを検知したと
き出力信号を発するトリガガス検知回路と、常時は不作
動状態におかれ、前記トリガガス検知回路の出力信号が
発せられたとき加熱されて作動状態となる高温ガス検知
素子を有し当該高温ガス検知素子がガスを検知したとき
ガス検知出力信号を発する目的ガス検知回路と、前記ト
リガガス検知回路および前記目的ガス検知回路とに電気
的に結合され前記トリガガス検知回路の出力信号が発さ
れたとき、前記目的ガス検知回路の高温ガス検知素子を
加熱する加熱手段とを備えたことを特徴とするガス応動
装置。
1. A trigger gas detection circuit having a low temperature gas detection element for detecting gas at a low temperature, which outputs an output signal when the low temperature gas detection element detects a low concentration gas, and is always in an inoperative state, A target gas detection circuit that emits a gas detection output signal when the high temperature gas detection element detects a gas and has a high temperature gas detection element that is heated when the output signal of the trigger gas detection circuit is emitted; And a heating unit that is electrically coupled to the trigger gas detection circuit and the target gas detection circuit and that heats a high temperature gas detection element of the target gas detection circuit when an output signal of the trigger gas detection circuit is emitted. Characterized gas response device.
【請求項2】ガス検知を行うガス検知素子と、当該ガス
検知素子を低温に保持して低温ガス検知素子としてガス
検知を行い、低濃度ガスを検知したとき出力信号を発す
るトリガガス検知回路と、当該トリガガス検知回路の出
力信号が発せられたとき、前記ガス検知素子を加熱する
加熱手段と、常時は不作動状態におかれ、前記トリガガ
ス検知回路の出力信号が発せられたとき、前記加熱手段
で加熱された前記ガス検知素子を高温ガス検知素子とし
てガス検知を行わせ、ガスを検知したときガス検知出力
信号を発する目的ガス検知回路とを備えたことを特徴と
するガス応動装置。
2. A gas detection element for performing gas detection, a trigger gas detection circuit for holding the gas detection element at a low temperature to perform gas detection as a low temperature gas detection element, and issuing an output signal when a low concentration gas is detected, When an output signal of the trigger gas detection circuit is issued, a heating means for heating the gas detection element and a normally inactive state, and when the output signal of the trigger gas detection circuit is issued, the heating means A gas response device comprising: a heated gas detection element as a high temperature gas detection element to detect gas, and a target gas detection circuit that outputs a gas detection output signal when gas is detected.
JP60231350A 1985-10-18 1985-10-18 Gas response device Expired - Lifetime JPH0640360B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60231350A JPH0640360B2 (en) 1985-10-18 1985-10-18 Gas response device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60231350A JPH0640360B2 (en) 1985-10-18 1985-10-18 Gas response device

Publications (2)

Publication Number Publication Date
JPS6292098A JPS6292098A (en) 1987-04-27
JPH0640360B2 true JPH0640360B2 (en) 1994-05-25

Family

ID=16922243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60231350A Expired - Lifetime JPH0640360B2 (en) 1985-10-18 1985-10-18 Gas response device

Country Status (1)

Country Link
JP (1) JPH0640360B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697366A1 (en) 1994-05-26 1996-02-21 Kanji Tomidokoro Jack

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55147341A (en) * 1979-05-08 1980-11-17 Riken Keiki Kk Alarming device for gas concentration
JPS561294U (en) * 1979-06-18 1981-01-08
JPS56168892U (en) * 1980-05-15 1981-12-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697366A1 (en) 1994-05-26 1996-02-21 Kanji Tomidokoro Jack

Also Published As

Publication number Publication date
JPS6292098A (en) 1987-04-27

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