JPH0635168A - Lithography mask for semiconductor device - Google Patents

Abstract

PURPOSE:To form plural kinds of resist freed parts different from each other in width on a wafer and to cross them. CONSTITUTION:A shifter material 12 and a light shielding material 13 are disposed on a glass substrate 11 so that they partially overlap each other. First narrow dark parts are formed on a wafer by interference of light along edge parts 12a of the shifter material 12 not overlapping the light shielding material 13. Second broard dark parts are formed on the water by the light shielding material 13. The first and second dark parts cross.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lithographic mask for a semiconductor device used for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, as a method of manufacturing a semiconductor device,
A manufacturing method using an edge-based phase shift method is known. In this edge-using phase shift method, a lithography mask as shown in FIG. 4 is used at the time of resist patterning. FIG. 4A is a plan view of the lithography mask, and FIG. 4B is a side view thereof.

That is, this lithography mask 30
Is a shifter material 3 made of SiO ₂ or the like on the glass substrate 31.
2 is vapor-deposited. Such a lithography mask 30 is arranged above the resist applied on the wafer, and exposure is performed through the lithography mask 30. In this case, the light passing through the shifter material 32 is 180 ° C. out of phase with the light not passing through. Therefore, as shown in FIG. 5, both lights interfere with each other at a location along the edge portion of the shifter material 32 on the resist to form a dark portion. Then, by this dark portion, a slit (resist removal portion) 35 having a width of about 0.2 to 0.3 μm can be provided on the wafer. In addition,
In FIG. 5, reference numeral 36 indicates the remaining resist portion.

[0004]

According to such an edge-use type phase shift method, as compared with the case where an ordinary mask in which a light shielding material made of chromium or the like is vapor-deposited on a glass substrate is used, the resist is extremely narrow. The punched portion can be formed on the wafer.

However, in the case of the edge-assisted phase cyst method, the width of the resist removal portion on the wafer is determined only by the exposure conditions, and is the same width in all regions. Therefore, it is difficult to provide resist-extracted portions having different widths, and it is impossible to cross resist-extracted portions having different widths.

The present invention has been made in consideration of such a point, and it is possible to provide resist withdrawal portions having a narrow width on a wafer and to freely design resist patterns having different widths so as to intersect with each other. An object of the present invention is to provide a lithographic mask for a semiconductor device, which can improve the degree of precision.

[0007]

The present invention comprises a glass substrate arranged on a resist of a wafer, and a light shielding material and a shifter material provided on the glass substrate so as to partially overlap each other, A first dark portion is formed on the resist by light interference by using an edge of a portion of the shifter material that does not overlap with the light shielding material, and a second darker portion that is wider than the first dark portion on the resist by the light shielding material. A lithographic mask for a semiconductor device, wherein a dark portion is formed, and the first dark portion and the second dark portion are intersected with each other.

[0008]

A lithographic mask is placed on a resist applied on a wafer and exposed to form a first dark portion on the resist by light interference using an edge of a portion of the shift material that does not overlap with the light shielding material, A second dark portion, which is wider than the first dark portion, is formed on the resist by the light shielding material.
The dark part and the second dark part are intersected. The first dark portion forms a first resist removal portion on the wafer, the second dark portion forms a second resist removal portion on the wafer, and the first resist removal portion and the second resist removal portion intersect with each other.

[0009]

Embodiments of the present invention will be described below with reference to the drawings. 1 to 3 are views showing an embodiment of a lithography mask for a semiconductor device according to the present invention.

As shown in FIGS. 1 and 2, the lithographic mask 10 includes a glass substrate 11, a shifter material 12 made of SiO ₂ or the like deposited on the glass substrate 11, and chromium or the like deposited on the glass substrate 11. And a light shielding material 13 made of

The shift material 12 and the light shielding material 13 partially overlap each other. In this case, as shown in FIG. 2A, the shifter material 12 may be vapor-deposited on the end portion of the light-shielding material 13 previously vapor-deposited on the glass substrate 11 in a state of being partially overlapped, or conversely vapor-deposited beforehand. Further, the light shielding material 13 may be vapor-deposited on the end portion of the shifter material 12 in a state of partially overlapping.
Further, as shown in FIG. 1, some of the light shielding materials 13 are shifter materials 12.
Is independently deposited on the glass substrate 11.

Next, the operation of this embodiment having such a configuration will be described.

Such a lithographic mask 10 is placed on a resist 20 (FIG. 3) applied on a wafer,
Exposure is performed through the lithography mask 10. In this case, the light passing through the shifter material 12 is 180 ° C. out of phase with the light not passing therethrough, so that both of the light passing through the shifter material 12 and the light shielding material 13 along the edge 12a of the shifter material 12 have a phase difference. The light interferes to form a narrow first dark portion on the resist 20. Then, the first resist removal portion 21 can be formed on the wafer by the first dark portion (see FIG. 3). That is, the position of the first resist removal portion 21 corresponds to the position of the first dark portion.

At the same time, as shown in FIG. 3, a second dark portion having a width wider than the first dark portion is formed on the resist 20 by the light shielding material 13, and the second dark portion has a second darker portion wider than the first resist removal portion 21. The resist removal portion 22 can be formed on the wafer. In this case, the position of the second resist removal portion 22 corresponds to the position of the second dark portion. The portions other than the first resist removal portion 21 and the second resist removal portion 22 remain on the wafer as a resist remaining portion 25. In this way, a desired pattern can be formed on the wafer.

As described above, according to this embodiment, the first resist removal portion 21 and the first resist removal portion 21 are formed on the wafer.
The second resist removal portion 22 having a wider width can be formed in a mixed manner. In addition, the light shielding material 13 of the shift material 12
Since the edge 12a of the portion that does not overlap with the light shielding material 13 intersects with the light shielding material 13, the first dark portion 21 formed along the edge 12a and the second dark portion 22 formed by the light shielding material 13 may intersect with each other. it can. Therefore, the first resist removal portion 21 corresponding to the first dark portion and the second resist removal portion 22 corresponding to the second dark portion can intersect with each other, and the degree of freedom in pattern design can be improved.

[0016]

As described above, according to the present invention,
The first resist removal portion and the second resist removal portion wider than the first resist removal portion can be mixedly formed on the wafer. Further, the first resist removal portion and the second resist removal portion can intersect with each other, and thus the degree of freedom in pattern design can be improved.

[Brief description of drawings]

FIG. 1 is a plan view showing an embodiment of a lithography mask for a semiconductor device according to the present invention.

FIG. 2 is a side view of the lithographic mask for a semiconductor device shown in FIG.

FIG. 3 is a plan view of a resist pattern obtained by the lithography mask for a semiconductor device according to the present invention.

FIG. 4 is a diagram showing a conventional lithography mask for a semiconductor device.

FIG. 5 is a plan view of a resist pattern obtained by a conventional lithography mask for semiconductor devices.

[Explanation of symbols]

 10 Lithography Mask 11 Glass Substrate 12 Shifter Material 12a Edge 13 Light-Shielding Material 20 Resist 21 First Resist Removal Portion 22 Second Resist Removal Portion 25 Resist Remaining Portion

Claims (1)

[Claims] 1. A glass substrate disposed on a resist of a wafer, and a light shielding material and a shifter material provided on the glass substrate so as to partially overlap each other, and the light shielding material among the shifter materials. A first dark portion is formed on the resist by light interference using an edge of a portion that does not overlap with the first dark portion, and a second dark portion wider than the first dark portion is formed on the resist by the light shielding material; A lithographic mask for a semiconductor device, wherein a dark portion and the second dark portion are crossed.