JPH06350131A - Semiconductor laser device - Google Patents

Abstract

PURPOSE:To protect from external force a semiconductor laser chip that projects laser light, a photodiode chip for monitoring that receives the light and wires that electrically connect these conductors, by providing a protecting member to cover the semiconductor laser chip, photodiode chip and wires. CONSTITUTION:A lead 26 is mounted on one side of the chip mounting section 25 of a common lead 24, and electrically connected with a semiconductor laser chip 21 through a wire 29. Another lead 27 is mount on the other side of the chip mounting section 25, and electrically connected with a photodiode chip 22 for monitoring through a wire 30. The semiconductor laser chip 21, photodiode chip 22 for monitoring and wires 29 and 30 are covered with resin, and all of them are covered with a plastic protecting member 31. The cylindrical protecting member 31 is closed at one end and can be horizontally divided into an upper half 32 and a lower half 33.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser device used as a light source for an optical disc system, an optical transmission system or various optical measurement systems.

[0002]

2. Description of the Related Art A commercially available semiconductor laser device generally has a structure shown in a sectional perspective view in FIG. That is, the heat sink portion 4 mounted on the stem 3
The semiconductor laser chip 1 is mounted on the upper side and electrically connected to the terminal leads by the wires 7. On the other hand, the monitor photodiode chip 2 is mounted on the stem 3 and is electrically connected to the terminal lead 6 and the wire 8. Further, the semiconductor laser chip 1 and the monitor photodiode chip 2 thus mounted are hermetically sealed by a cap 10 provided with a laser light extraction glass window 9.

In the semiconductor laser device having the above structure,
Since both the stem 3 and the cap 10 are independent single-piece components, the manufacturing process thereof is complicated, the unit price of each component itself is expensive, and it is difficult to reduce the size. .

Therefore, there has been proposed a semiconductor laser device having a plan view in the manufacturing process shown in FIG. 24 and a sectional view taken along the line AA in FIG. This semiconductor laser device is an insert type lead frame (in which a lead frame and a holding member are integrally formed) 1
The semiconductor laser chip 11 is mounted on the tip of each common lead 14 in FIG. 3, and the monitor photodiode chip 12 is mounted inside the semiconductor laser chip 11. The semiconductor laser chip 11 is made of resin 1.
5 (omitted in FIG. 24).

Further, two leads 16 and 17 arranged in parallel on both sides of the common lead 14 are held by the lead 14 by a holding member 18 made of ceramic.
The semiconductor laser chip 11 is connected to the lead 16 by the wire 19, and the monitoring photodiode chip 12 is connected to the lead 17 by the wire 20. However, both wires 19 and 20 are omitted in FIG. The semiconductor laser device thus formed is separated into individual semiconductor laser devices by cutting the common lead 14 at an appropriate position at the base.

[0006]

According to the conventional semiconductor laser device shown in FIGS. 24 and 25, since the semiconductor laser chip 11 is covered with the resin 15, the structure shown in FIG.
Airtight sealing with a cap such as the semiconductor laser device shown in FIG. 3 can be eliminated. Further, since the insert type lead frame 13 is formed, the manufacturing process can be simplified, and the size and cost can be reduced.

However, the semiconductor laser chip 1 described above
1. Monitor photodiode chip 12 and wire 1
Since 9 and 20 are exposed in the state of being covered with resin or in the state of being bare, they are weak against external force, and there is a problem that they must be handled with sufficient care.

Therefore, an object of the present invention is to sufficiently protect the semiconductor laser chip, the monitor photodiode chip, and the wires connecting these to a conductor, which is easy to manufacture and easy to reduce in size and cost. It is to provide a semiconductor laser device.

[0009]

In order to achieve the above object, the invention according to claim 1 comprises a semiconductor laser chip mounted on a base and covered with a resin, and a semiconductor laser chip mounted on the base and A monitor photodiode chip that receives the emitted laser light, a first wire that electrically connects the semiconductor laser chip to the first conductor, and a monitor photodiode chip that electrically connects the monitor photodiode chip to the second conductor. In a semiconductor laser device having a second wire connected to, the semiconductor laser device is integrally attached to the base, and covers at least the semiconductor laser chip, the monitor photodiode chip, the first wire and the second wire, and It is equipped with a semiconductor laser chip, a photodiode chip for monitoring, and a protective member for protecting both wires from external force. To have.

According to a second aspect of the invention, in the semiconductor laser device according to the first aspect of the invention, the base is a lead of a lead frame, the protective member has a bottomed cylindrical shape, and the bottom is It is characterized by being penetrated by the lead.

According to a third aspect of the present invention, there is provided the semiconductor laser device according to the first aspect, wherein
And the second conductor are leads of a lead frame, the protection member has a cylindrical shape, and has at least two grooves extending in the axial direction on the inner surface thereof, and the groove has the above-mentioned structure. The protection member is integrally attached to the lead by fitting the outermost side of the leads.

The invention according to claim 4 is the semiconductor laser device according to any one of claims 1 to 3, wherein the protective member is emitted from the semiconductor laser chip to the outside. It is characterized in that it has a structure in which it is hermetically sealed except for a hole through which the laser light directed therethrough passes, and a light absorbing film is formed on the inner surface.

The invention according to claim 5 is the semiconductor laser device according to any one of claims 1 to 4, wherein the protective member is emitted from the semiconductor laser chip to the outside. It is characterized in that an optical member is provided at a passing position of the laser beam which is directed.

The invention according to claim 6 is the semiconductor laser device according to any one of claims 1 to 5, wherein the protection member has a base portion on which the semiconductor laser chip is mounted. Is provided with a reference surface that determines a reference position when the is installed in another device.

[0015]

In the invention according to claim 1, at least the semiconductor laser chip, the monitor photodiode chip for receiving the laser beam emitted from the semiconductor laser chip, and the semiconductor laser chip are electrically connected to the first conductor. The first wire and the second wire for electrically connecting the monitor photodiode to the second conductor are protection members integrally attached to a base on which the semiconductor laser chip and the monitor photodiode chip are mounted. The surroundings are covered by and protected from external force.

Further, in the invention according to claim 2, the semiconductor laser chip mounted on the lead of the lead frame which penetrates through the bottom of the protective member having a cylindrical shape with a bottom and protrudes inside the protective member, and The monitor photodiode chip and the first and second wires connected to the both chips are covered by the protective member and are protected from external force.

Further, in the invention according to claim 3, the lead of the lead frame on which the semiconductor laser chip and the monitor photodiode chip covered with the resin are mounted, and both the chips are electrically connected by the first and second wires. When mounting a cylindrical protection member on different leads of the lead frame connected to each other, the groove extending in the axial direction is formed on the inner surface of the protection member at the outermost side of the lead. After fitting one end of the positioned side, the lead is inserted using the groove as a guide. In this way, the protection member is attached to the lead frame very easily.

Further, in the invention according to claim 4, the protective member covering at least the semiconductor laser chip, the monitor photodiode chip, and the periphery of both the wires protects the laser light emitted from the semiconductor laser chip toward the outside. Since the structure is hermetically sealed except for the holes through which it passes, light is prevented from entering from the outside into the protective member as much as possible. Further, a small amount of light from the outside that has entered the protection member through the hole is absorbed by the light absorption film formed on the inner surface of the protection member. In this way, the influence of the light from the outside is minimized and the intensity of the laser light emitted from the semiconductor laser chip to the outside is accurately controlled.

Further, in the invention according to claim 5, the laser light emitted outward from the semiconductor laser chip is incident on the optical member provided on the protection member. Then, laser light according to the characteristics of the optical member is emitted to the outside.

Further, in the invention according to claim 6, when the base portion on which the semiconductor laser chip is mounted is installed in another device, the reference surface provided on the protection member becomes the reference surface of the other device. It is abutted and installed. Thus, the reference surface provided on the protective member determines the installation reference value of the base with respect to the other device.

[0021]

The present invention will be described in detail below with reference to the embodiments shown in the drawings. 1 is a perspective view of the semiconductor laser device of the first embodiment, and FIG. 2 is a vertical sectional view of FIG. In this semiconductor laser device, a semiconductor laser chip or the like is mounted on a common lead 24 of an insert type lead frame 23 having a planar shape as shown in FIG. 3 as follows. That is, the chip mounting portion 25 is formed at the tip of the common lead 24. Then, the chip mounting portion 25
A semiconductor laser chip 21 is mounted on the uppermost top surface of. Further, in the recess 25a having a V-shaped vertical cross section provided inside the semiconductor laser chip 21 on the chip mounting portion 25, the monitor photodiode chip 22 is provided.
The light receiving surface 22a is mounted so that the light receiving surface 22a is inclined to the inner laser light emitting end surface 21a of the semiconductor laser chip 21 as desired.

Then, the semiconductor laser chip 21 is electrically connected by a wire 29 to the lead 26 arranged in parallel on one side of the chip mounting portion 25 of the common lead 24. On the other hand, the monitor photodiode chip 22 is electrically connected to the lead 27 arranged side by side on the other side of the chip mounting portion 25 by the wire 30. After that, the semiconductor laser chip 21, the monitor photodiode chip 22, and the wires 29 and 30 are covered with resin (not shown: the same in each of the following embodiments). By doing so, the laser light emitted inward from the inner laser light emission end face 21b of the semiconductor laser chip 21 is efficiently incident on the light receiving surface 22a of the monitor photodiode chip 22, and the power of the laser light or the like is increased. Can be monitored.

In the semiconductor laser device of this embodiment,
As shown in FIG. 1, the semiconductor laser chip 21, the monitor photodiode 22, and the wires 29, 30 are covered with a bottomed cylindrical plastic protective member 31, thereby forming the semiconductor laser chip 21, the monitor photodiode 22, and the monitor photodiode 22. Protects the wires 29, 30 from external force.

The protective member 31 is, as shown in FIG.
The upper protection member 32 and the lower protection member 33 can be horizontally divided into two at the positions where the leads 24, 26, 27 are inserted. Then, the leads 24, 2 in the bottom portion 32a of the upper protection member 32 and the bottom portion 33a of the lower protection member 33, respectively.
Notches 24a, 26a, 27a; 24 are provided at 6, 27 insertion positions.
b, 26b, 27b are provided, and when the upper protection member 32 and the lower protection member 33 are integrally connected, the cutout portion 24a,
Lead 2 by 26a, 27a and cutouts 24b, 26b, 27b
A hole through which 4, 26 and 27 are inserted is formed.

The upper protection member 32 and the lower protection member 33 having the above-described structure are common by arranging the respective bottom portions 32a and 33a at the positions of the leads 24, 26 and 27 indicated by the alternate long and short dash line in FIG. The leads 24 are joined and fixed so as to cover the chip mounting portion 25. The attachment and fixing at that time may be adhesion or welding.

In this way, each semiconductor laser device to which the protection member 31 is attached is separated from the tie bar 23a and the semiconductor laser chip 21 is inspected.
After that, the leads 24, 26, 27 are cut off inside the place of the one-dot chain line ERO in FIG. 3, and the semiconductor laser chip 21, the monitor photodiode 22, and the wires 29, 30 are protected by the protection member 31. A laser device is obtained.

As described above, in the present embodiment, the semiconductor laser chip, the monitor photodiode chip, and the lead frame type semiconductor laser device in which the wire is not exposed and not sufficiently protected in the conventional semiconductor laser chip and the monitor. The tips of the leads 24, 26, 27 provided with the photodiode chip and wires for use are protected by a protective member 31 having a bottomed cylindrical shape. Therefore, the semiconductor laser chip 21, the monitor photodiode chip 22, and the wires 29, 30 are sufficiently protected from external force without being exposed to the outside.

Further, since the semiconductor laser device is formed on the insert type lead frame 23, the manufacturing process can be simplified, and the size and cost can be easily reduced.

FIG. 5 is a vertical sectional view of the semiconductor laser device of the second embodiment. In the following description, the same members as those in the first embodiment are designated by the same reference numerals as those in FIGS. In the first embodiment, the monitor photodiode chip is installed in the V-shaped recess formed in the tip of the common lead in the lead frame. On the other hand, in this embodiment, the light receiving surface 22a is directly mounted on the chip mounting portion 25 formed at the tip of the common lead 24.

On the other hand, the semiconductor laser chip 21 is mounted on the submount 34, and the inner laser emitting end face 21a is formed.
The laser light emitted from is easily incident on the light receiving surface 22a of the monitoring photodiode chip 22. The semiconductor laser chip 21 configured as described above,
The monitor photodiode chip 22 and the wires (not shown) are covered with the protective member 31 so as not to be exposed, as in the case of the first embodiment.

FIG. 6 is a vertical sectional view of the semiconductor laser device of the third embodiment. In the second embodiment, the monitor photodiode chip is provided separately from the submount. On the other hand, in this embodiment, the monitoring photodiode chip is formed in the submount 35, and the positional relationship between the inner laser light emitting end surface 21a of the semiconductor laser chip 21 and the light receiving surface 35a of the monitoring photodiode chip is the first. It is made to be the same as in the case of the second embodiment.

FIG. 7 is a vertical sectional view of the semiconductor laser device of the fourth embodiment. Protective member 36 in this embodiment
Has the same shape as in the first embodiment. However, the material is made of metal in order to enhance the thermal strength. As a result, the insulation between the bottom portion 37a of the upper protection member 37 and the bottom portion 38a of the lower protection member 38 and the common lead 24 becomes a problem. Therefore, in this embodiment,
Between the notch in the bottom portion 37a of the upper protection member 37 and the leads 24, 26, 27, and the lower protection member 3
And the leads 24 and 2 in the bottom portion 38a of FIG.
An insulator 39 such as a low melting point glass is fitted and fixed between 6 and 27. The structure is exactly the same as that of the first embodiment except for the protection member 37.

FIG. 8 is a vertical sectional view of the semiconductor laser device of the fifth embodiment. Protective member 42 in this embodiment
Are the protective members 31 and 3 in the first to fourth embodiments.
Contrary to the case of 6, the volume of the lower protection member 44 is larger than the volume of the upper protection member 43. this is,
For the following reasons.

That is, in the present embodiment, a portion 41a at the tip of the common lead 41 to which the monitor photodiode chip 22 is attached is formed obliquely downward by homing, and a portion at which the semiconductor laser chip 21 at the tip is mounted. 41b is formed horizontally. The monitor photodiode chip 22 is mounted on the outer surface of the portion 41a formed obliquely downward so that the light receiving surface 22a of the monitor photodiode chip 22 desires the semiconductor laser chip 21. By doing so, the photodiode chip 22 for monitoring the laser light emitted from the inner laser light emitting end face 21a of the semiconductor laser chip 21.
The efficiency of uptake into is improved.

In this way, the semiconductor laser chip 21 and the monitor photodiode chip, which are installed under the common lead 41, are wrapped by the large-volume lower protection member 44, and the upper protection member 43 is covered to ensure protection. To do.

FIG. 9 is a vertical sectional view of the semiconductor laser device of the sixth embodiment. The structure of the protective member 31 in this embodiment and the mounting structure of the semiconductor laser chip 21, the monitor photodiode chip 22 and the protective member 31 to the common lead 24 are exactly the same as in the first embodiment.

In addition, in the present embodiment, the opening of the protection member 31 is covered with the cover member 45. An optical lens 46 is provided at a position of the lid member 45 facing the outer laser light emitting end face 21b of the semiconductor laser chip 21.
Is attached. By doing so, the laser light emitted from the outer laser light emission end face 21b is condensed by the optical lens 46, and the laser light having a higher energy density is extracted to the outside.

FIG. 10 is a longitudinal sectional view of the semiconductor laser device of the seventh embodiment. The outer laser light emitting end face 21b of the semiconductor laser chip 21 of the lid member 45 in the present embodiment.
A hologram glass 47 is attached to a portion facing to. By doing so, a hologram laser unit can be formed. The structure of the protection member 31 in this embodiment and the mounting structure of the semiconductor laser chip 21, the monitor photodiode chip 22 and the protection member 31 to the common lead 24 are exactly the same as in the first embodiment.

FIG. 11 is a vertical sectional view of the semiconductor laser device of the eighth embodiment. The outer laser light emitting end face 21b of the semiconductor laser chip 21 in the lid member 45 of the present embodiment.
An end portion of the optical fiber 48 is attached to a portion opposed to, and the one end surface 48a of the optical fiber 48 and the outer laser light emitting end surface 21a of the semiconductor laser chip 21 are opposed to each other. By doing so, the laser light emitted from the outer laser light emitting end face 21a can be extracted in any direction. Incidentally, the protective member 31 in the present embodiment
And the structure for attaching the semiconductor laser chip 21, the monitor photodiode chip 22, and the protective member 31 to the lead 24 are exactly the same as those in the first embodiment.

12 and 13 are views showing manufacturing steps in the semiconductor laser device of the ninth embodiment. In the semiconductor laser device according to the present embodiment, a protective member that covers and protects the semiconductor laser chip, the monitor photodiode chip, the wire, and the like is formed into a frame so that the protective member can be easily attached to the lead frame. Below, FIG.
A method of manufacturing the semiconductor laser device according to the present embodiment will be described with reference to FIGS.

As shown in FIG. 12B, the semiconductor laser chip 21 is mounted on the leading end of the common lead 52 in the lead frame 51 having the shape as shown in FIG.
Further, the monitor photodiode chip 22 is mounted on the inside thereof. Semiconductor laser chip 21 at that time
The installation state of the monitor photodiode chip 22 with respect to the common lead 52 may be any of FIG. 2, FIG. 5, FIG. 6 and FIG. However, in this embodiment,
It is installed in the state shown in FIG.

Next, as shown in FIG. 13 (c), the lead 53 attached to the common lead 52 and the semiconductor laser chip 21 (the drawing number is omitted in FIG. 13 (c)) are connected by Au (gold) wires. The wires 55 are electrically connected. Similarly, the lead 54 attached to the common lead 52 and the monitor photodiode chip 22 (illustration number is omitted in FIG. 13C) are electrically connected by the wire 56 of Au (gold) wire.

Next, as shown in FIG. 13 (d), a plurality of protective members 57, 57, ... Having a shape described in detail later are connected in a row by connecting rods 58, 58 ,. A protective member frame 59 is prepared. Then, the tip end portion of the set of adjacent leads 52, 53, 54 is inserted into each protective member 57 of the protective member frame 59, and the protective member frame 59 is attached to the lead frame 51. In this way, each semiconductor laser chip 21, the monitor photodiode chip 22, and the wires 55 and 56 (both are
13D, the drawing number is omitted) is protected by the protection member 57.

Next, as shown in FIG. 13 (e), the connecting rod 58 of the protection member frame 59 and the lead frame 5 are formed.
1 of the leads 52, 53, 54 by cutting
A semiconductor laser device in which the semiconductor laser chip 21, the monitor photodiode chip 22, and the wires 55 and 56 attached to the tips of the reference numerals 53 and 54 are covered with the protective member 57 can be obtained.

Each protection member 57 of the protection member frame 59 has a structure as shown in FIG. The protection member 57 has a cylindrical shape, and two axial grooves 58 and 59 are provided on the inner peripheral surface of the protection member 57 so that the outer four sides of the leads 53 and 54 located on both sides of the common lead 52 can be fitted to each other. It has become.

The protective member frame 59 having the above structure
When attaching the lead frame 51 to the lead frame 51,
As shown in FIG. 14B, the ends of the outer sides of the leads 53, 24 are fitted into the corresponding grooves 58, 59 of the protective member 57, and the grooves 58, 59 are used as guides in the protective member 57. The leads 52, 53, 54 are inserted in the arrow direction. Then, as shown in FIG. 14B, the positions of the grooves 58 and 59 on the end surface 60 of the protective member 57 and the leads 53 and 54 are fixed with the resin 61. At this time, the lengths of the grooves 58 and 59 should be set such that the protective member 57 can completely cover the semiconductor laser chip 21, the monitor photodiode 22, and the wires 55 and 56. If so, a sufficient protection effect can be obtained.

FIG. 15 is a perspective view of the semiconductor laser device of the tenth embodiment. The protective member in this embodiment has the same structure as the protective member 31 in FIG. The tip of the common lead 62 protected by the protection member 31 has a "T" shape. Then, the semiconductor laser chip 21 is mounted at the center of a portion (hereinafter, referred to as a horizontal bar) 63 of the common lead 62 which is in contact with the horizontal bar of the “T” shape. In addition, a portion of the base of the horizontal bar 63 in a portion corresponding to the vertical bar of the “T” shape (hereinafter referred to as a vertical bar 64) is bent at an angle, and the monitor photodiode chip 22 is provided with the semiconductor laser chip 21 at the bent position. Mount as desired. Then, while electrically connecting the semiconductor laser chip 21 to the lead 66 by the wire 68,
The monitor photodiode chip 22 is connected to the lead 65 by a wire 67.

The length of the horizontal bar 63 of the common lead 62 is longer than the inner diameter of the protection member 31, and the common lead 6
2 is an upper protection member 32 and a lower protection member 3 of the protection member 31.
It is grasped by 3 and 3. In addition, the leads 65, 66
Has an "L" shape that is bent outward, and its outer end is gripped by the joint portion between the upper protection member 32 and the lower protection member 33 of the protection member 31, like the common lead 62. Thus, the protection member 3 is formed by the side and bottom of the upper protection member 32 and the side and bottom of the lower protection member 33.
1 is fixed to each lead 62, 65, 66. Therefore,
According to this embodiment, the hollow protection member 31 can be fixed more securely.

In the present embodiment, the monitor photodiode chip 22 is mounted at a position where the vertical bar 64 of the common lead 62 is obliquely bent, and the semiconductor laser chip 2 is mounted.
The laser light from No. 1 is effectively incident. However, the present invention is not limited to this, and as shown in FIG. 5, the semiconductor laser chip 21 may be mounted on the submount by forming the vertical bar of the common lead into a straight line.

FIG. 16 is a perspective view of the semiconductor laser device of the eleventh embodiment. Protective member 71 in this embodiment
Has a shape in which a side portion of a bottomed cylinder is cut out along the axis, and is integrally molded with the leads 72, 73, 74. The leads 72, 73, 74 are provided on the bottom portion 71a of the protection member 71.
It is formed so as to project in the direction perpendicular to the bottom portion 71a from both surfaces of the. Then, the semiconductor laser chip 21 is mounted on the leading end of the lead 72 on the side of the protection member 71, and the monitor photodiode chip 22 is mounted on the inner side thereof while being inclined.

The semiconductor laser chip 21 has a wire 75.
While being electrically connected to the lead 73 by means of, the monitor photodiode chip 22 is electrically connected to the lead 74 by means of a wire 76. At this time, since the semiconductor laser chip 21 side is cut out along the axis with respect to the array surface of the leads 72, 73, 74 on the side portion of the protection member 71, die bonding to the leads 72, 73, 74 is performed. Wire bonding can be performed with good workability.

FIG. 17 is a sectional view of the semiconductor laser device of the twelfth embodiment. Protective member 81 in this embodiment
Has a bottomed and covered cylindrical shape. This protective member 81 is also separable into an upper protective member 82 and a lower protective member 83 similarly to the protective member shown in FIG. The semiconductor laser chip 21 is mounted on the tip of the lead 84 held by the dividing surface between the bottom portion 82a of the upper protection member 82 and the bottom portion 83a of the lower protection member 83, and the monitor photodiode chip is mounted on the inside thereof. 22 is mounted by tilting.

A hole 82c is provided at the center of the joint between the lid portion 82b of the upper protective member 82 and the lid portion 83b of the lower protective member 83 so that the light emitted from the semiconductor laser chip 21 can pass therethrough. Thus, the protection member 8 in this embodiment
In No. 1, the semiconductor laser chip 21 is completely sealed except for the portion facing the outer laser light emitting end face to minimize the influence of light from the outside.

Further, the semiconductor laser chip 2 is formed by coating the inner surface of the protective member 81 having the above-mentioned structure with a light absorbing film 86.
A part of the laser light from the inner laser light emitting end face in No. 1 or the light from the outside entering from the hole 82c of the lids 82b and 83b is absorbed. By doing so, the intensity of the laser light emitted from the outer laser light emitting end face of the semiconductor laser chip 21 can be accurately controlled. Further, even if the laser light emitted from the inner laser light emitting end surface of the semiconductor laser chip 21 is reflected on the surface of the monitoring photodiode chip 22, it is absorbed by the light absorption film 86 coated on the inner surface of the protection member 81. The reflected light is prevented from being emitted to the outside.
Therefore, no ripple occurs in the far field pattern of the emitted light.

FIG. 18 is a perspective view of the semiconductor laser device of the thirteenth embodiment, and FIG. 19 is a side view. The protection member 91 in the present embodiment has a shape like an inverted "U" and is integrally molded with the leads 92, 93, 94. Then, the semiconductor laser chip 21 is mounted on the leading end of the lead 92 via the submount 34, and the monitor photodiode chip 22 is mounted on the inside thereof.

Reference surfaces 92a, 93a, 94a on the same plane are formed on the end surfaces of the tips of the leads 92, 93, 94. The outer laser light emitting end face 21b of the semiconductor laser chip 21 is made flush with the reference faces 92a, 93a, 94a. In this way, each lead 92,
By providing the reference surfaces 92a, 93a, 94a at the tips of the 93, 94, the mounting accuracy when mounting this semiconductor laser device to an external system is improved. At this time, by forming the protective member 91 in a “U” -shaped cross section, the semiconductor laser chip 21 and the like can be attached to each other, the semiconductor laser device can be attached to an external system, and the semiconductor laser chip 21 and the like can be protected. Balance can be achieved.

FIG. 20 is a perspective view of the semiconductor laser device of the fourteenth embodiment, and FIG. 21 is a side view. The protection member 95 in this embodiment has a "U" shape, and the leads 98 and 9 are formed on the inner surface 96a of the base 96 thereof.
.. are printed and wired. The semiconductor laser chip 21 is mounted on the tip of the lead 98 via the submount 34, and the monitor photodiode chip 22 is mounted on the inside thereof. Also, the base 9
A photodiode chip 100 for signal detection for detecting a signal due to reflected light of a laser signal emitted from the semiconductor laser chip 21 is mounted on the end face 96b of the laser diode 6.

The protective member 95 in this embodiment also has a reference surface. This reference surface is formed by end faces 97a, 97a of the side plates 97, 97 standing on both sides of the base 96 of the protective member 95 on the side of the photodiode chip 100,
It is formed in front of the surface of the photodiode chip 100 mounted on the end surface 96b of the base 96. Figure 2
In 1, the hologram glass 1 is attached to the reference surfaces 97a and 97a.
By attaching 01, the hologram laser unit is formed. The reference plane is the side plates 97, 9
7, end faces 97b, 97 on the side opposite to the photodiode chip 100
It may be formed in b.

FIG. 22 is a cross sectional view of the semiconductor laser device of the fifteenth embodiment. This embodiment relates to an improvement of the protection member 31 shown in FIG.
The tips of the leads 113, 114, 115 of No. 2 are also gripped.

The protective member 110 in this embodiment is shown in FIG.
Like the protection member 31 shown in FIG. 1, it can be divided into an upper protection member 111 and a lower protection member.
The protective member 111 is fixed by gripping the leads 113, 114, 115 by the bottom portion 111a of No. 1 and the bottom portion of the lower protective member. Note that only the cross section of the upper protection member 111 is visible in FIG. The semiconductor laser chip 21 is mounted on the chip mounting portion 116 of the lead 113, and the monitor photodiode chip 22 is mounted on the lead 113 inside the chip mounting portion 116.

In addition to this, in this embodiment, a lid portion 111b having a hole 111c is integrally formed on the side of the protective member 110 opposite to the bottom portion 111a. The lid portion 111b is formed to have a large thickness, and is a joint surface between the lid portion 111b of the upper protective member 111 and the lid portion of the lower protective member (not shown in FIG. 22), and the tip portions 114a of the leads 114, 115 are formed. Side portions 1 of the chip mounting portion 116 of the leads 115a and the leads 112
Hold 16a and 116a. Thus, the lid portion 111b
And the bottom portion 111a connect the protection member 110 to the leads 113, 1
It is fixed to 14,115. Therefore, according to this embodiment, the hollow protection member 110 can be fixed more securely.

When the semiconductor laser device formed in any of the first to fifteenth embodiments described above is used as a light source for an optical disk in particular, the semiconductor laser chip, the monitor photodiode chip and the wire are made of resin as described above. It is desirable to cover the semiconductor laser chip so that the resin thickness at the outer laser light emitting end face is 500 μm or less and is parallel to the laser light emitting end face. This is because when the semiconductor laser device is used as a light source for an optical disk, the optical axis shift due to the resin covering the outer laser light emitting end face and the influence of multiple reflection between the outer laser light emitting end face and the resin surface pose a problem. Because.

FIG. 23 shows an example of laser light emission characteristics of a semiconductor laser device having a thickness of 500 μm or less and a semiconductor laser chip coated with resin so that the surface thereof is parallel to the outer laser light emission end face. Indicates. FIG. 23
As can be seen from the above, by covering the outer laser light emitting end face with a resin thickness of 500 μm, the light intensity distribution “θ∥” in the horizontal direction with respect to the active layer for laser oscillation is also The vertical light intensity distribution “θ⊥” also has a single-peak characteristic.

Further, since the surface of the resin covering the outer laser light emitting end face of the semiconductor laser chip is parallel to the outer laser light emitting end face, the optical axes of both the light intensity distributions are deviated. Not having characteristics.
That is, with the above resin configuration, it is possible to provide a semiconductor laser device that can be used as a light source for an optical disk.

The resin thickness may be 500 μm or less. For example, the resin thickness is 400 μm, 300 μm, 200 μm,
Good characteristics can be obtained even in the case of 100 μm. However, if the resin thickness is too small, end surface corrosion occurs due to ambient humidity and the resin deteriorates, causing a large fluctuation in the operating current of the laser, resulting in reduced reliability. Therefore, it is desirable that the resin thickness is at least 10 μm or more.

[0066]

As is apparent from the above, the semiconductor laser device according to the first aspect of the present invention has the protection integrally attached to the base portion on which the resin-coated semiconductor laser chip and the monitor photodiode chip are mounted. A member covers at least the periphery of the semiconductor laser chip, the monitor photodiode chip, the first wire electrically connected to the semiconductor laser chip, and the second wire electrically connected to the monitor photodiode chip. Therefore, the semiconductor laser chip, the monitor photodiode chip and both wires can be effectively protected from external force. Therefore, according to the present invention, the semiconductor laser device can be easily handled including the manufacturing process.

According to a second aspect of the semiconductor laser device of the present invention, the base is composed of leads of a lead frame,
The protective member is formed into a bottomed tubular shape, and since the bottom portion of the protective member is penetrated by the leads, the semiconductor laser chip and the monitor photodiode chip whose periphery is covered by the tubular protective member are provided. It can be formed on a lead frame. Therefore, according to the present invention, the manufacturing process of the semiconductor laser device can be simplified, and the semiconductor laser device can be easily reduced in size and cost.

Further, in the semiconductor laser device of the invention according to claim 3, the base portion, the first conductive portion and the second conductive portion are constituted by leads of the lead frame, and the protective member is formed in a tubular shape, and Since the outermost side of the side of the lead is fitted into at least two grooves extending to the inner surface of the lead, the protection member is integrally attached to the lead. When the protective member is mounted, it can be easily mounted by inserting the lead into the protective member using the groove as a guide. Therefore, according to the present invention, it is possible to connect a plurality of the protection members with a connecting rod to form a frame, and simultaneously attach the framed protection members to the leads of the lead frame. In this way, productivity can be improved.

Further, the semiconductor laser device of the invention according to claim 4 has a structure in which the protection member is hermetically sealed while leaving a hole for passing the laser light emitted from the semiconductor laser chip and directed outward. Since the light absorbing film is formed on the inner surface, the protective member can block the light that enters from the outside, and the laser light that could not go to the outside or a small amount of light that entered from the hole on the inner surface. It can be absorbed by the formed light absorbing film. Therefore, according to the present invention, in addition to being easy to handle, the influence of light from the outside or the like is minimized, and the intensity of the laser light emitted from the semiconductor laser chip to the outside is accurately measured. You can control.

Further, in the semiconductor laser device of the present invention according to claim 5, the optical member is provided at the passing position of the laser beam emitted from the semiconductor laser chip toward the outside in the protective member, so that it is easy to handle. In addition to the above, laser light can be extracted according to the characteristics of the optical member.

Further, in the semiconductor laser device of the present invention according to claim 6, since the base surface on which the semiconductor laser chip is mounted is installed in another device, a reference surface for defining a reference position is provided on the protective member. The semiconductor laser device can be easily installed in an external device. Then, the installation reference position value of the base with respect to the other device is determined by the reference surface provided on the protection member at that time. Therefore, according to the present invention, in addition to being easy to handle,
It is possible to accurately determine the incident position of the laser light emitted from the semiconductor laser chip on the external device.

[Brief description of drawings]

FIG. 1 is a perspective view of an embodiment of a semiconductor laser device of the present invention.

FIG. 2 is a sectional view of the semiconductor laser device shown in FIG.

FIG. 3 is an explanatory diagram of formation of the semiconductor laser device shown in FIG.

FIG. 4 is a configuration diagram of a protection member in FIG.

5 is a cross-sectional view of a semiconductor laser device different from that in FIG.

FIG. 6 is a cross-sectional view of a semiconductor laser device different from FIGS. 1 and 5.

FIG. 7 is a cross-sectional view of a semiconductor laser device different from those in FIGS. 1, 5 and 6.

FIG. 8 is a sectional view of a semiconductor laser device different from those in FIGS. 1 and 5 to 7;

FIG. 9 is a cross-sectional view of a semiconductor laser device different from FIGS. 1 and 5 to 8.

FIG. 10 is a cross-sectional view of a semiconductor laser device different from those in FIGS. 1 and 5 to 9.

11 is a cross-sectional view of a semiconductor laser device different from FIGS. 1 and 5 to 10. FIG.

FIG. 12 is a diagram showing a manufacturing process in a semiconductor laser device which is different from FIGS. 1 and 5 to 11;

FIG. 13 is a diagram showing a manufacturing process that follows FIG. 12.

14 is an explanatory view of the structure of the holding member in FIG. 13 and the procedure for attaching the lead frame to the protective member frame.

FIG. 15 is a perspective view of a semiconductor laser device different from FIGS. 1 and 5 to 12;

FIG. 16 is a perspective view of a semiconductor laser device different from those in FIGS. 1, 5 to 12 and 15.

FIG. 17 is a cross-sectional view of a semiconductor laser device different from FIGS. 1, 5 to 12, 15 and 16.

FIG. 18 is a perspective view of a semiconductor laser device different from FIGS. 1, 5 to 12, and 15 to 17;

19 is a side view of the semiconductor laser device shown in FIG.

20 is a perspective view of a semiconductor laser device different from FIGS. 1, 5 to 12, and 15 to 18. FIG.

21 is a side view of the semiconductor laser device shown in FIG. 20. FIG.

FIG. 22 is a cross-sectional view of a semiconductor laser device different from those in FIGS. 1, 5 to 12, 15 to 18 and 20.

FIG. 23 is a diagram showing an example of laser light emission characteristics of the semiconductor laser device of the present invention.

FIG. 24 is a sectional perspective view of a commercially available semiconductor laser device.

FIG. 25 is a plan view showing the manufacturing process of the conventional semiconductor laser device different from that of FIG. 24;

26 is a sectional view of the semiconductor laser device shown in FIG. 25, taken along the line AA.

[Explanation of symbols]

21 ... Semiconductor laser chip, 22 ... Monitor photodiode chip, 31, 36, 42, 57, 71, 81, 91, 9
5,110 ... Protective member, 32,37,43,82,111 ...
Upper protection member, 33, 38, 44, 83 ... Lower protection member,
24, 26, 27, 41, 52 to 54, 62, 65, 66, 72
~ 74,84,92 ~ 94,98,99,113 ~ 115 ...
Reed, 29, 30, 55, 56, 67, 68, 75, 76 ...
Wire, 34, 35 ... Submount, 45 ... Lid member, 46 ... Optical lens, 47, 10
1 ... Holographic glass, 48 ... Optical fiber,
59 ... Protective member frame, 86 ... Light absorbing film,
92a to 94a, 97a ... Reference plane.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masaru Ogawa 22-22 Nagaike-cho, Abeno-ku, Osaka-shi, Osaka Within Sharp Corporation (72) Ryo Tsuji 22-22, Nagaike-cho, Abeno-ku, Osaka-shi, Osaka Within the corporation

Claims (6)

[Claims] 1. A semiconductor laser chip mounted on a base and covered with a resin, a monitor photodiode chip mounted on the base for receiving laser light emitted from the semiconductor laser chip, and the semiconductor laser chip. In a semiconductor laser device having a first wire electrically connected to a first conductor and a second wire electrically connecting the monitor photodiode chip to a second conductor, the semiconductor laser device is integrated with the base. Attached, at least the above semiconductor laser chip, monitor photodiode chip,
1. A semiconductor laser device comprising a first wire and a second wire, and a semiconductor laser chip, a monitor photodiode chip, and a protection member for protecting both wires from an external force, covering the periphery of the first wire and the second wire. 2. The semiconductor laser device according to claim 1, wherein the base is a lead of a lead frame, the protective member has a bottomed tubular shape, and the bottom is penetrated by the lead. Characteristic semiconductor laser device. 3. The semiconductor laser device according to claim 1, wherein the base portion, the first conductor and the second conductor are leads of a lead frame, and the protection member has a cylindrical shape and has an inner surface. Has at least two grooves extending in the axial direction, and the protective member is integrally attached to the lead by fitting the outermost side of the lead into the groove. A semiconductor laser device characterized by being provided. 4. The semiconductor laser device according to claim 1, wherein the protection member has a hole for passing a laser beam emitted from the semiconductor laser chip and directed outward. A semiconductor laser device characterized in that the light absorption film is formed on the inner surface of the semiconductor laser device. 5. The semiconductor laser device according to claim 1, wherein the protection member is an optical member at a position where a laser beam emitted from the semiconductor laser chip and directed outward is passed. A semiconductor laser device comprising: 6. The semiconductor laser device according to claim 1, wherein the protective member is used when the base portion on which the semiconductor laser chip is mounted is installed in another device. A semiconductor laser device having a reference surface for determining a reference position.