JPH0634852A - Simple optical coupling method for semiconductor laser and its device - Google Patents

Simple optical coupling method for semiconductor laser and its device

Info

Publication number
JPH0634852A
JPH0634852A JP4187750A JP18775092A JPH0634852A JP H0634852 A JPH0634852 A JP H0634852A JP 4187750 A JP4187750 A JP 4187750A JP 18775092 A JP18775092 A JP 18775092A JP H0634852 A JPH0634852 A JP H0634852A
Authority
JP
Japan
Prior art keywords
optical fiber
semiconductor laser
substrate
metallized
central axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP4187750A
Other languages
Japanese (ja)
Inventor
Yuichi Odagiri
雄一 小田切
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4187750A priority Critical patent/JPH0634852A/en
Publication of JPH0634852A publication Critical patent/JPH0634852A/en
Withdrawn legal-status Critical Current

Links

Abstract

PURPOSE:To easily execute optical coupling by directly coupling a semiconductor laser and an optical fiber in the state of packaging paired chips and optically adjusting in position. CONSTITUTION:This data communication control system has the semiconductor laser 1 and an optical fiber terminal part 4 formed by inserting an optical fiber into a pipe having an offcentered central axis. The system has also a second substrate 7 which is embedded with the optical fiber terminal part 4 and has a slender V-groove 8 for fixing the optical fiber terminal part 4 to a prescribed position by rotationally adjusting this terminal part so as to align the central axis of the core of the optical fiber and the central axis of the active layer of the semiconductor laser 1 in a vertical direction and a first substrate 2 which is fixed and mounted with the semiconductor laser 1 by first solder 3 and fixes and mounts, by soldering, the second substrate 7 embedded and fixed with the optical fiber terminal part 4 to a prescribed position by sliding and adjusting the above-mentioned terminal part so as to align the central axis of the core of the optical fiber and the central axis of the active layer of the semiconductor laser 1 in a lateral direction.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体レーザ簡易光結
合方法および装置に関し、特に半導体レーザと光ファイ
バとを直接結合するときの半導体レーザ簡易光結合方法
および装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor laser simple optical coupling method and apparatus, and more particularly to a semiconductor laser simple optical coupling method and apparatus for directly coupling a semiconductor laser and an optical fiber.

【0002】[0002]

【従来の技術】図4を参照すると、従来の半導体レーザ
簡易光結合方法は、結合用レンズ20を介して半導体レ
ーザ1からの出力光を適切なビーム径に変換し直し、光
ファイバ22のコアに結合させている。これらは光モジ
ュール21としてユニット化されて使用されている。し
かしながら光通信装置の小型化および低コスト化は、特
に光加入者系システムでは不可欠であり、従来のように
光モジュールを一ユニットとして光パネル上に搭載する
方法は装置の小型化および低コスト化を難しくする。こ
れを容易にするために半導体レーザをチップとして取扱
い、結合用レンズ20を使用しないで直接光ファイバと
結合させ、さらに駆動回路用電気部品もチップとして例
えばシリコン基板上に搭載するベアチップ実装方式があ
る。従来の半導体レーザ簡易光結合装置は、図5を参照
すると、半導体レーザを例えばシリコン基板上に実装す
る場合、半田バンプ3を用いて半導体レーザ1をシリコ
ン基板22上に実装する方法がある。この方法はセルフ
アラインメント工法で、半田バンプ3が溶融するとこに
表面張力により丸くなる性質を利用するものである、即
ち、先ず半導体レーザ1を所定の位置に実装するため、
あらかじめの半導体レーザ1の底面とシリコン基板22
上に、限定された大きさのメタライズ面を形成させ、2
つのメタライズ面を半田バンプ3で覆うようにする。次
に、シリコン基板22を窒素ガス雰囲気中で加熱するこ
とにより半田バンプ3は、表面張力により2つのメタラ
イズ面がきれいに位置合せされ、この結果高精度に半導
体レーザ1をシリコン基板22上に実装することができ
る。そこでシリコン基板22のメタライズ面に隣接する
よう、かつ光ファイバ6の実装固定用に選択エッチング
で形成させたシリコンV溝8を設けることにより、シリ
コン基板22に並行な面上の半導体レーザ1と光ファイ
バ6との位置合せがサブミクロンの精度で可能である。
2. Description of the Related Art Referring to FIG. 4, in a conventional semiconductor laser simple optical coupling method, output light from a semiconductor laser 1 is reconverted into an appropriate beam diameter via a coupling lens 20, and a core of an optical fiber 22 is converted. Is combined with. These are unitized and used as the optical module 21. However, downsizing and cost reduction of the optical communication device are indispensable especially in the optical subscriber system, and the conventional method of mounting the optical module as one unit on the optical panel reduces the size and cost of the device. Make it difficult. In order to facilitate this, there is a bare chip mounting method in which a semiconductor laser is handled as a chip, directly coupled with an optical fiber without using a coupling lens 20, and a drive circuit electric component is also mounted as a chip on, for example, a silicon substrate. . Referring to FIG. 5, the conventional semiconductor laser simple optical coupling device has a method of mounting the semiconductor laser 1 on the silicon substrate 22 using the solder bumps 3 when mounting the semiconductor laser on the silicon substrate, for example. This method is a self-alignment construction method and utilizes the property that the solder bumps 3 are rounded by the surface tension when the solder bumps 3 are melted. That is, first, since the semiconductor laser 1 is mounted at a predetermined position,
The bottom surface of the semiconductor laser 1 and the silicon substrate 22 in advance
Form a metallized surface of limited size on top of
The metallized surfaces are covered with the solder bumps 3. Next, by heating the silicon substrate 22 in a nitrogen gas atmosphere, the two metallized surfaces of the solder bump 3 are finely aligned by the surface tension, and as a result, the semiconductor laser 1 is mounted on the silicon substrate 22 with high accuracy. be able to. Therefore, by providing a silicon V groove 8 formed by selective etching for mounting and fixing the optical fiber 6 so as to be adjacent to the metallized surface of the silicon substrate 22, the semiconductor laser 1 and the light on the surface parallel to the silicon substrate 22 are provided. Alignment with the fiber 6 is possible with sub-micron accuracy.

【0003】[0003]

【発明が解決しようとする課題】この従来の半導体レー
ザ簡易光結合方法およびその装置では、シリコン基板2
2面と平行な方向への位置調整は精度良くできるが、垂
直な方向に対する位置調整では、半田バンプ3の厚みの
不確定さで数十ミクロン(μm)以上のバラツキおよび
半導体レーザの構造に起因した電極面から活性層までの
1〜2μm前後の厚さのバラツキがある。このため、半
導体レーザ1と選択エッチングによるV溝8を同一基板
上に構成することは位置精度の面から困難である。
In this conventional semiconductor laser simple optical coupling method and apparatus, a silicon substrate 2 is used.
The position adjustment in the direction parallel to the two planes can be performed with high accuracy, but in the position adjustment in the vertical direction, the thickness of the solder bump 3 is uncertain and is caused by variations of several tens of microns (μm) or more and the structure of the semiconductor laser. There is a thickness variation of about 1 to 2 μm from the electrode surface to the active layer. Therefore, it is difficult to form the semiconductor laser 1 and the V groove 8 by selective etching on the same substrate in terms of positional accuracy.

【0004】[0004]

【課題を解決するための手段】本発明の半導体レーザ簡
易光結合方法および装置は、第2のメタライズ面を有す
る半導体レーザと、中心軸が偏心したパイプ中に光ファ
イバを挿入した光ファイバを挿入した光ファイバ端末部
と、第1の面に第1のメタライズ面を有するとともに前
記第1の面と反対側の第2の面に前記光ファイバ端末部
を埋置し所定位置に固定する細長状の溝を有する第1の
基板と、第1の面に第3のメラタイズ面を有し、前記半
導体レーザを前記第3のメタライズ面に前記第2のメタ
ライズ面を半田固着搭載するとともに、前記第1の面側
に前記第1の面の段差を有する第2の面に第4をメタラ
イズ面を有し、前記第2の面に前記第1の基板を前記第
1の基板の第1の面で載置し、前記光ファイバのコア中
心軸と前記半導体レーザの活性層中心軸とが一致する位
置で前記第4のメタライズ面に前記第2のメタライズ面
を半田固着する第2の基板とを備える。
SUMMARY OF THE INVENTION A semiconductor laser simple optical coupling method and apparatus according to the present invention includes a semiconductor laser having a second metallized surface and an optical fiber having an optical fiber inserted in a pipe whose center axis is eccentric. And an elongated fiber having a first metallized surface on a first surface and embedding the optical fiber terminal on a second surface opposite to the first surface and fixing it at a predetermined position. A first substrate having a groove and a first surface having a third metallized surface, and mounting the semiconductor laser on the third metallized surface by soldering the second metallized surface to the third metallized surface. The first surface has a step on the first surface, the second surface has a fourth metallized surface, and the second surface has the first substrate on the first surface. Place the optical fiber on the center axis of the optical fiber and the semiconductor. And a second substrate to the solder securing said second metallization plane on said fourth metallization plane at a position where the active layer central axis of chromatography The match.

【0005】[0005]

【実施例】次に本発明について図面を参照して説明す
る。本発明の一実施例を示す図1,図2および図3を併
せて参照して説明すると、半導体レーザ簡易光結合方法
および装置は、下面が金亜鉛−金でメタライズされてい
る半導体レーザ1はシリコン材料の第1の基板2上に金
スズを素材とする高温融点の第1の半田(半田バンプ)
3により固着してある。この場合、第1の基板2はあら
かじめチタン−白金−金で部分的にメタライズされてい
る。光ファイバ端末部4はステンレス製で中心が偏心し
た金属パイプ5中に光ファイバ6が挿入されている。こ
の光ファイバ端末部4は、シリコン材料の第2の基板7
上に選択エッチング法により形成されたV溝8に置かれ
ている。このような構成による光学的な結合方法は、先
ず光ファイバ端末部4をV溝8上で回転させることによ
り、第1の基板2上に固定された半導体レーザ1の活性
層9とコア10とがほぼ同じ高さとなるように調整す
る。次に第2の基板7を第1の基板上で矢印の方向にス
ライドさせることにより横方向を調整する。このように
て位置決めした後、第1の基板2と第2の基板7とを鉛
スズを素材とする第2の半田(半田バンプ)11で固定
する。
The present invention will be described below with reference to the drawings. Referring to FIG. 1, FIG. 2 and FIG. 3 showing an embodiment of the present invention together, a semiconductor laser simple optical coupling method and apparatus are provided, in which a semiconductor laser 1 whose lower surface is metallized with gold-zinc-gold is used. High temperature melting point first solder (solder bump) made of gold tin on the first substrate 2 of silicon material
It is fixed by 3. In this case, the first substrate 2 has been partially metallized beforehand with titanium-platinum-gold. The optical fiber end portion 4 is made of stainless steel, and the optical fiber 6 is inserted into a metal pipe 5 whose center is eccentric. This optical fiber end 4 comprises a second substrate 7 of silicon material.
It is placed on the V groove 8 formed by the selective etching method. In the optical coupling method with such a configuration, the active layer 9 and the core 10 of the semiconductor laser 1 fixed on the first substrate 2 are first rotated by rotating the optical fiber terminal portion 4 on the V groove 8. Adjust so that the heights are almost the same. Next, the horizontal direction is adjusted by sliding the second substrate 7 on the first substrate in the direction of the arrow. After positioning in this way, the first substrate 2 and the second substrate 7 are fixed with the second solder (solder bump) 11 made of lead tin.

【0006】以上の実施例では、説明をわかりやすくす
るため、第1,第2の基板材料および第1,第2の半田
材料を具体化して示したが、特にこれらの材料に限定さ
れないことは述べるまでもない。
In the above embodiments, the first and second substrate materials and the first and second solder materials are embodied for the sake of easy understanding of the description, but the materials are not particularly limited to these materials. Not to mention.

【0007】[0007]

【発明の効果】以上説明したように本発明によれば、偏
心した金属パイプに挿入された光ファイバによる光ファ
イバ端末部を用いることにより、第1の半田の厚みにか
かわりなく高さ方向の調整が可能となり、また第1の基
板を第2の基板上でスライドさせることにより横方向の
調整が可能となるため、半導体レーザと光ファイバ端末
部との光学的結合が容易に実現できる。本発明の実施例
では、発振波長1.55μmのインジウム・リン系の半
導体レーザを用い、カットオフ波長1.21μmのシリ
カ系光ファイバを用いて光結合効率として−6dB程度
の値が得られる。
As described above, according to the present invention, by using the optical fiber end portion formed by the optical fiber inserted in the eccentric metal pipe, the height direction adjustment is performed regardless of the thickness of the first solder. Since the first substrate can be slid on the second substrate to adjust in the lateral direction, the optical coupling between the semiconductor laser and the optical fiber terminal can be easily realized. In the embodiment of the present invention, an indium-phosphorus semiconductor laser having an oscillation wavelength of 1.55 μm is used, and a silica optical fiber having a cutoff wavelength of 1.21 μm is used to obtain an optical coupling efficiency value of about −6 dB.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例の半導体レーザ簡易光結合装
置を示す斜視図である。
FIG. 1 is a perspective view showing a semiconductor laser simple optical coupling device according to an embodiment of the present invention.

【図2】同実施例の半導体レーザ簡易光結合装置を示す
側面図である。
FIG. 2 is a side view showing the semiconductor laser simple optical coupling device according to the embodiment.

【図3】同実施例の半導体レーザ簡易光結合装置の光フ
ァイバ端末部の断面図である。
FIG. 3 is a cross-sectional view of an optical fiber terminal portion of the semiconductor laser simple optical coupling device of the same embodiment.

【図4】従来例の半導体レーザ簡易光結合方法を示す図
である。
FIG. 4 is a diagram showing a conventional semiconductor laser simple optical coupling method.

【図5】従来例の半導体レーザ簡易光結合装置を示す斜
視図である。
FIG. 5 is a perspective view showing a conventional semiconductor laser simple optical coupling device.

【符号の説明】[Explanation of symbols]

1 半導体レーザ 2 第1の基板 3 第1の半田 4 光ファイバ端末部 5 金属パイプ 6 光ファイバ 7 第2の基板 8 V溝 9 活性層 10 コア 11 第2の半田 1 Semiconductor Laser 2 First Substrate 3 First Solder 4 Optical Fiber Terminal 5 Metal Pipe 6 Optical Fiber 7 Second Substrate 8 V Groove 9 Active Layer 10 Core 11 Second Solder

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 第1の面に第1のメタライズ面を有する
とともに前記第1の面と反対側の第2の面に細長状の溝
を有する第1の基板の前記溝に中心軸が偏心したパイプ
中に光ファイバを挿入した光ファイバ端末部を載置した
第1の組立体と、 第1の面に第2のメタライズ面を有するとともに前記第
1の面側に前記第1の面と段差を有する第2の面に第4
のメタライズ面を有する第2の基板の前記第1の面に第
3のメタライズ面を有する半導体レーザを前記第2のメ
タライズ面に前記第3のメタライズ面を半田固着して搭
載した第2の組立体とを有し、 前記第2の組立体の前記第2の基板の前記第2の面に前
記第1の組立体の前記第1の基板を前記第1の面で載置
し、前記第1の基板を前記第2の基板の第2の面でスラ
イドさせ、かつ前記光ファイバ端末部を前記第1の基板
の前記溝上で回転させることにより前記半導体レーザと
前記光ファイバとの直接光結合を調整して前記第4のメ
タライズ面に前記第2のメタライズ面を半田固着し前記
光ファイバ端末部を前記溝に固定することを特徴とする
半導体レーザ簡易光結合方法。
1. A central axis is eccentric to the groove of a first substrate having a first metallized surface on a first surface and an elongated groove on a second surface opposite to the first surface. A first assembly in which an optical fiber terminal having an optical fiber inserted therein is placed in the pipe, a second metallized surface is provided on a first surface, and the first surface is provided on the first surface side. A fourth surface on the second surface having steps
A second set in which a semiconductor laser having a third metallized surface on the first surface of a second substrate having a metallized surface is mounted by soldering the third metallized surface to the second metallized surface. A solid body, the first substrate of the first assembly is placed on the second surface of the second substrate of the second assembly on the first surface, and Direct optical coupling between the semiconductor laser and the optical fiber by sliding the first substrate on the second surface of the second substrate and rotating the optical fiber end portion on the groove of the first substrate. Is adjusted to solder the second metallized surface to the fourth metallized surface and fix the optical fiber end portion to the groove.
【請求項2】 第2のメタライズ面を有する半導体レー
ザと、 中心軸が偏心したパイプ中に光ファイバを挿入した光フ
ァイバを挿入した光ファイバ端末部と、 第1の面に第1のメタライズ面を有するとともに前記第
1の面と反対側の第2の面に前記光ファイバ端末部を埋
置し所定位置に固定する細長状の溝を有する第1の基板
と、 第1の面に第3のメラタイズ面を有し、前記半導体レー
ザを前記第3のメタライズ面に前記第2のメタライズ面
を半田固着搭載するとともに、前記第1の面側に前記第
1の面の段差を有する第2の面に第4をメタライズ面を
有し、前記第2の面に前記第1の基板を前記第1の基板
の第1の面で載置し、前記光ファイバのコア中心軸と前
記半導体レーザの活性層中心軸とが一致する位置で前記
第4のメタライズ面に前記第2のメタライズ面を半田固
着する第2の基板と、 を備えることを特徴とする半導体レーザ簡易光結合装
置。
2. A semiconductor laser having a second metallized surface, an optical fiber end portion in which an optical fiber is inserted in a pipe whose center axis is eccentric, and a first metallized surface on the first surface. A first substrate having an elongated groove for embedding the optical fiber terminal portion and fixing it at a predetermined position on a second surface opposite to the first surface, and a third surface on the first surface. A second metallized surface of the semiconductor laser, the second metallized surface is soldered and mounted on the third metallized surface, and the step of the first surface is provided on the first surface side. Has a fourth metallized surface, the first substrate is placed on the second surface on the first surface of the first substrate, and the core central axis of the optical fiber and the semiconductor laser On the fourth metallized surface at a position where the central axis of the active layer coincides A second substrate for fixing the second metallized surface by soldering, and a semiconductor laser simple optical coupling device comprising:
JP4187750A 1992-07-15 1992-07-15 Simple optical coupling method for semiconductor laser and its device Withdrawn JPH0634852A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4187750A JPH0634852A (en) 1992-07-15 1992-07-15 Simple optical coupling method for semiconductor laser and its device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4187750A JPH0634852A (en) 1992-07-15 1992-07-15 Simple optical coupling method for semiconductor laser and its device

Publications (1)

Publication Number Publication Date
JPH0634852A true JPH0634852A (en) 1994-02-10

Family

ID=16211550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4187750A Withdrawn JPH0634852A (en) 1992-07-15 1992-07-15 Simple optical coupling method for semiconductor laser and its device

Country Status (1)

Country Link
JP (1) JPH0634852A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6443631B1 (en) 2001-02-20 2002-09-03 Avanti Optics Corporation Optical module with solder bond
US6546172B2 (en) 2001-02-20 2003-04-08 Avanti Optics Corporation Optical device
US6546173B2 (en) 2001-02-20 2003-04-08 Avanti Optics Corporation Optical module
DE102005032593B4 (en) * 2005-07-11 2007-07-26 Technische Universität Berlin Optical module with a light-guiding fiber and a light-emitting / light-receiving component and method for manufacturing
JP2011108682A (en) * 2009-11-12 2011-06-02 Anritsu Corp External resonator-type semiconductor laser and raman amplifier using the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6443631B1 (en) 2001-02-20 2002-09-03 Avanti Optics Corporation Optical module with solder bond
US6546172B2 (en) 2001-02-20 2003-04-08 Avanti Optics Corporation Optical device
US6546173B2 (en) 2001-02-20 2003-04-08 Avanti Optics Corporation Optical module
DE102005032593B4 (en) * 2005-07-11 2007-07-26 Technische Universität Berlin Optical module with a light-guiding fiber and a light-emitting / light-receiving component and method for manufacturing
JP2011108682A (en) * 2009-11-12 2011-06-02 Anritsu Corp External resonator-type semiconductor laser and raman amplifier using the same

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19991005