JPH06325327A - Magnetoresistance effect type thin film magnetic head - Google Patents
Magnetoresistance effect type thin film magnetic headInfo
- Publication number
- JPH06325327A JPH06325327A JP11445293A JP11445293A JPH06325327A JP H06325327 A JPH06325327 A JP H06325327A JP 11445293 A JP11445293 A JP 11445293A JP 11445293 A JP11445293 A JP 11445293A JP H06325327 A JPH06325327 A JP H06325327A
- Authority
- JP
- Japan
- Prior art keywords
- yoke
- magnetic
- yokes
- thin film
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Magnetic Heads (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、磁気記録媒体に記録さ
れた信号を磁気抵抗効果素子(以下MR素子と称す)を
用いて検出する磁気抵抗効果型薄膜磁気ヘッド(以下M
Rヘッドと称す)に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive thin film magnetic head (hereinafter referred to as M
R head).
【0002】[0002]
【従来の技術】従来のMRヘッドとしては図2に示した
ものが知られている。これはヨークタイプMRヘッドと
呼ばれ、実際の使用時においてMR素子を磁気記録媒体
から離し、磁気記録媒体からの信号磁束をMR素子まで
導く磁性体よりなるヨークを配置した構造である。2. Description of the Related Art As a conventional MR head, the one shown in FIG. 2 is known. This is called a yoke type MR head, and has a structure in which the MR element is separated from the magnetic recording medium during actual use, and a yoke made of a magnetic material for guiding the signal magnetic flux from the magnetic recording medium to the MR element is arranged.
【0003】図2はヨークタイプMRヘッドのトラック
幅方向に垂直な方向の断面図である。基板1はNi−Z
nフェライト、Mn−Znフェライトなどの高透磁率磁
性体であり、下側ヨークとなる。絶縁層2および絶縁層
3の間にはMR素子5にバイアス磁界を印加するための
導体4が配置されている。MR素子5はNi−Fe合金
薄膜などが用いられる。磁気記録媒体に記録された信号
磁束をMR素子5に導くための磁路となる第1のヨーク
7および第2のヨーク8は通常厚さ0.5〜1μmのN
i−Fe合金薄膜などが用いられる。絶縁層6はMR素
子5と第1のヨーク7、第2のヨーク8間の電気的絶縁
層、さらに下側ヨークと第1のヨーク7間の磁気ギャッ
プとなる。FIG. 2 is a sectional view of the yoke type MR head in a direction perpendicular to the track width direction. Substrate 1 is Ni-Z
It is a high-permeability magnetic material such as n-ferrite and Mn-Zn ferrite, and serves as the lower yoke. A conductor 4 for applying a bias magnetic field to the MR element 5 is arranged between the insulating layers 2 and 3. For the MR element 5, a Ni-Fe alloy thin film or the like is used. The first yoke 7 and the second yoke 8 which serve as magnetic paths for guiding the signal magnetic flux recorded on the magnetic recording medium to the MR element 5 are usually N having a thickness of 0.5 to 1 μm.
An i-Fe alloy thin film or the like is used. The insulating layer 6 serves as an electrical insulating layer between the MR element 5, the first yoke 7 and the second yoke 8, and a magnetic gap between the lower yoke and the first yoke 7.
【0004】上記のMRヘッドにおいては通常MR素子
のトラック幅方向に磁化容易軸を持つ磁気異方性が付与
され、MR素子は単磁区状態に保持して使用される。M
Rヘッドの再生は、磁気記録媒体からの信号磁束によっ
てMR素子の磁化が回転したときに生じるMR素子の抵
抗値変化を検出するものである。In the above-mentioned MR head, magnetic anisotropy having an easy axis of magnetization is usually provided in the track width direction of the MR element, and the MR element is used in a single magnetic domain state. M
The reproduction of the R head is to detect the change in the resistance value of the MR element caused when the magnetization of the MR element is rotated by the signal magnetic flux from the magnetic recording medium.
【0005】[0005]
【発明が解決しようとする課題】しかし、従来のヨーク
タイプMRヘッドにおいてはMR素子内に磁区が発生
し、この磁区が不連続的に移動し再生信号にバルクハウ
ゼンノイズが発生する課題があった。MR素子内に磁区
が発生する原因としては、MR素子の磁気異方性の乱れ
が挙げられる。MR素子の磁気異方性を乱す要因として
は、第1のヨーク、第2のヨークを構成する膜が内部応
力を有しており、ヨークからMR素子に応力が加わり、
逆磁歪効果により応力誘起の磁気異方性がMR素子に付
与され、トラック幅方向の磁気異方性が乱されることが
挙げられる。ヨーク膜はNi−Fe合金などがスパッ
タ、蒸着、メッキなどで形成されるが、何れの製法にお
いても膜は固有の内部応力を有しており、この内部応力
を小さくすることは困難であった。However, the conventional yoke type MR head has a problem that magnetic domains are generated in the MR element and the magnetic domains discontinuously move to generate Barkhausen noise in the reproduced signal. . Disturbance in the magnetic anisotropy of the MR element can be cited as a cause for generating magnetic domains in the MR element. As a factor that disturbs the magnetic anisotropy of the MR element, the films forming the first yoke and the second yoke have internal stress, and stress is applied to the MR element from the yoke.
It can be mentioned that stress-induced magnetic anisotropy is imparted to the MR element by the inverse magnetostriction effect and the magnetic anisotropy in the track width direction is disturbed. The yoke film is formed of Ni-Fe alloy or the like by sputtering, vapor deposition, plating or the like, but the film has an inherent internal stress in any manufacturing method, and it was difficult to reduce this internal stress. .
【0006】[0006]
【課題を解決するための手段】本発明は上記課題を解決
するために、ヨークの厚さをMR素子近傍では薄く、そ
の他の部分では厚くしたことを特徴としている。In order to solve the above-mentioned problems, the present invention is characterized in that the thickness of the yoke is thin near the MR element and thick in other portions.
【0007】[0007]
【作用】ヨークからMR素子へ加わる応力を小さくすれ
ば応力誘起の磁気異方性の発生は低減され、MR素子の
トラック幅方向の磁気異方性の乱れは抑えられる。その
ためにはヨークをMR素子から離して配置することが考
えられる。しかし、ヨークをMR素子から離して配置す
ると、ヨークに導かれてきた磁気記録媒体からの信号磁
束がMR素子まで到達しにくくなり再生出力が低下する
という問題が生じる。そこで、本発明では、ヨークをM
R素子から離さずに配置しヨークの厚さをMR素子近傍
のみ薄くして、ヨークからMR素子へ加わる応力を低減
させている。ヨーク厚さは、例えばMR素子近傍のみ
0.05μm、その他の部分は1μmとすれば応力は約
1/20に低減することが可能である。ヨーク厚さを薄
くしたことによる再生出力の低下は、薄くした部分がM
R素子近傍のみであるためほとんど生じない。By reducing the stress applied from the yoke to the MR element, the stress-induced occurrence of magnetic anisotropy is reduced, and the disturbance of the magnetic anisotropy of the MR element in the track width direction is suppressed. For that purpose, it is conceivable to dispose the yoke away from the MR element. However, when the yoke is arranged away from the MR element, there arises a problem that the signal magnetic flux from the magnetic recording medium guided to the yoke hardly reaches the MR element and the reproduction output is lowered. Therefore, in the present invention, the yoke is M
The yoke is arranged without being separated from the R element, and the thickness of the yoke is reduced only in the vicinity of the MR element to reduce the stress applied to the MR element from the yoke. If the yoke thickness is, for example, 0.05 μm only in the vicinity of the MR element and 1 μm in other portions, the stress can be reduced to about 1/20. The reproduction output is reduced due to the thin yoke.
Since it is only in the vicinity of the R element, it hardly occurs.
【0008】本発明によればMR素子に有害な影響を与
えるヨークからの応力を低減し、バルクハウゼンノイズ
の少ないヨークタイプMRヘッドが得られる。According to the present invention, it is possible to obtain the yoke type MR head which reduces the stress from the yoke, which has a detrimental effect on the MR element, and has less Barkhausen noise.
【0009】[0009]
【実施例】図1は本発明によるヨークタイプMRヘッド
の一実施例を示すもので、トラック幅方向に垂直な方向
の断面図である。基板1はNi−Znフェライトなどの
高透磁率磁性体であり、下側ヨークとなる。絶縁層2、
絶縁層3はSiO2などであり、これらの間にはMR素
子5にバイアス磁界を印加するためのAlなどの導体4
が配置される。MR素子5はNi−Fe合金薄膜などで
あり、厚さ0.05μm、幅10μm、トラック幅方向
の長さ70μmの形状に加工される。第1のヨーク7お
よび第2のヨーク8は厚さ1μmのNi−Fe合金薄膜
などであり、第1のヨーク7、第2のヨーク8のMR素
子近傍5μmの範囲で厚さ0.05μmに加工される。
絶縁層6はMR素子5と第1のヨーク7、第2のヨーク
8間の電気的絶縁層、さらに下側ヨークと第1のヨーク
7間の磁気ギャップとなる。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows an embodiment of a yoke type MR head according to the present invention and is a sectional view in a direction perpendicular to the track width direction. The substrate 1 is a high-permeability magnetic material such as Ni-Zn ferrite and serves as a lower yoke. Insulating layer 2,
The insulating layer 3 is made of SiO 2 or the like, and a conductor 4 such as Al for applying a bias magnetic field to the MR element 5 is provided between them.
Are placed. The MR element 5 is a Ni—Fe alloy thin film or the like, and is processed into a shape having a thickness of 0.05 μm, a width of 10 μm, and a length of 70 μm in the track width direction. The first yoke 7 and the second yoke 8 are Ni-Fe alloy thin films having a thickness of 1 μm, etc., and have a thickness of 0.05 μm in the range of 5 μm near the MR elements of the first yoke 7 and the second yoke 8. Is processed.
The insulating layer 6 serves as an electrical insulating layer between the MR element 5, the first yoke 7 and the second yoke 8, and a magnetic gap between the lower yoke and the first yoke 7.
【0010】図1に示した本発明によるヘッドで磁気記
録媒体を再生したときの特性は、図2に示した第1のヨ
ーク7、第2のヨーク8の厚さが1μmの従来のヘッド
に比べて、バルクハウゼンノイズが少なく、再生出力の
低下は1dB以内であった。また、第1のヨーク、第2
のヨークの厚さが1μmで、MR素子とヨークとが2μ
m離れた構成のヘッドはバルクハウゼンノイズは本発明
のヘッドと同程度に少ないが、再生出力の低下は10d
B以上であった。When the magnetic recording medium is reproduced by the head according to the present invention shown in FIG. 1, the characteristics of the conventional head having the thickness of the first yoke 7 and the second yoke 8 shown in FIG. In comparison, Barkhausen noise was small, and the reduction in reproduction output was within 1 dB. Also, the first yoke and the second
The thickness of the yoke is 1 μm, and the MR element and the yoke are 2 μm.
Barkshausen noise is as small as that of the head of the present invention in the heads separated by m, but the reproduction output is reduced by 10d.
It was B or more.
【0011】[0011]
【発明の効果】以上説明したように本発明のMRヘッド
によれば、MR素子部における応力誘起の磁気異方性の
発生を低減することが可能になり、バルクハウゼンノイ
ズの発生を抑制した良好な再生出力を得ることが出来
る。As described above, according to the MR head of the present invention, it is possible to reduce the occurrence of stress-induced magnetic anisotropy in the MR element portion, and it is possible to suppress Barkhausen noise. It is possible to obtain a proper reproduction output.
【図1】本発明による磁気抵抗効果型薄膜磁気ヘッドの
一実施例の断面図FIG. 1 is a sectional view of an embodiment of a magnetoresistive thin film magnetic head according to the present invention.
【図2】従来の磁気抵抗効果型薄膜磁気ヘッドの断面図FIG. 2 is a sectional view of a conventional magnetoresistive thin film magnetic head.
1 基板 2、3、6 絶縁層 4 導体 5 磁気抵抗効果素子 7 第1のヨーク 8 第2のヨーク 1 Substrate 2, 3, 6 Insulation Layer 4 Conductor 5 Magnetoresistive Element 7 First Yoke 8 Second Yoke
Claims (1)
抵抗効果素子まで導く磁路となるヨークが設けられた磁
気抵抗効果型薄膜磁気ヘッドにおいて、上記ヨークの厚
さを磁気抵抗効果素子近傍において薄く、その他の部分
において厚くしたことを特徴とする磁気抵抗効果型薄膜
磁気ヘッド。1. A magnetoresistive effect thin-film magnetic head provided with a yoke serving as a magnetic path for guiding a signal magnetic flux generated from a magnetic recording medium to a magnetoresistive effect element, wherein the yoke has a thickness near the magnetoresistive effect element. A magnetoresistive thin-film magnetic head characterized by being thin and thick in other portions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11445293A JPH06325327A (en) | 1993-05-17 | 1993-05-17 | Magnetoresistance effect type thin film magnetic head |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11445293A JPH06325327A (en) | 1993-05-17 | 1993-05-17 | Magnetoresistance effect type thin film magnetic head |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH06325327A true JPH06325327A (en) | 1994-11-25 |
Family
ID=14638089
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11445293A Pending JPH06325327A (en) | 1993-05-17 | 1993-05-17 | Magnetoresistance effect type thin film magnetic head |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH06325327A (en) |
-
1993
- 1993-05-17 JP JP11445293A patent/JPH06325327A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6190764B1 (en) | Inductive write head for magnetic data storage media | |
US6151193A (en) | Thin film magnetic head | |
JPH08185612A (en) | Mr head and its production | |
JPH05290331A (en) | Thin-film magnetic converter | |
JPH0473201B2 (en) | ||
US5792546A (en) | Magneto-resistive head and method of producing the same | |
JPH064832A (en) | Combine thin film magnetic head | |
JPH06274833A (en) | Magneto-resistance effect type magnetic head | |
JP3475868B2 (en) | Magnetoresistive thin-film magnetic head | |
JPS61194620A (en) | Thin film magnetic head | |
JPH06325327A (en) | Magnetoresistance effect type thin film magnetic head | |
JP2718242B2 (en) | Magnetoresistive head | |
JP3898863B2 (en) | Magnetoresistive thin-film magnetic head | |
JP3280057B2 (en) | Thin film magnetic head | |
JPS61134913A (en) | Magnetoresistance type thin film head | |
JPH011114A (en) | thin film magnetic head | |
JPS63129511A (en) | Magnetoresistance effect type thin film magnetic head | |
JPH0346885B2 (en) | ||
JPS5971124A (en) | Magneto-resistance effect magnetic head | |
JPS63138515A (en) | Thin film magnetic head and its reproduction system | |
JPS6154012A (en) | Magneto-resistance effect head | |
JPS622363B2 (en) | ||
JP2871055B2 (en) | Thin film magnetic head and method of manufacturing the same | |
JPH06301931A (en) | Magnetic head of magnetoresistance effect type and its manufacture | |
JPH0572642B2 (en) |