JPH06318337A - Semiconductor laser driving device - Google Patents

Semiconductor laser driving device

Info

Publication number
JPH06318337A
JPH06318337A JP6007961A JP796194A JPH06318337A JP H06318337 A JPH06318337 A JP H06318337A JP 6007961 A JP6007961 A JP 6007961A JP 796194 A JP796194 A JP 796194A JP H06318337 A JPH06318337 A JP H06318337A
Authority
JP
Japan
Prior art keywords
current source
semiconductor laser
current
low power
output
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6007961A
Other languages
Japanese (ja)
Other versions
JP2648084B2 (en
Inventor
Kunio Kojima
邦男 小嶋
Shozo Kobayashi
省三 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP6007961A priority Critical patent/JP2648084B2/en
Publication of JPH06318337A publication Critical patent/JPH06318337A/en
Application granted granted Critical
Publication of JP2648084B2 publication Critical patent/JP2648084B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)

Abstract

PURPOSE:To provide a semiconductor laser driving device solving a requirement to an information reproducing device by driving a semiconductor laser with three current sources of a bias current source, a low power current source and a high power current source. CONSTITUTION:The semiconductor laser is driven by three current sources of the bias current source 1, the low power current source 2 and the high power current source 3 at an information recording time. Further, the laser is driven by two current sources of the bias current source 1 and the low power current source 2 at a reproducing time. The occurrence of noise in the semiconductor laser due to a feedback beam at a low power time is suppressed by switching a current I1 from the low power current source 2 in a switching circuit 4 with a signal from a high freqency oscillator 6 at a high speed. The operation to the current source 2 is interrupted at a high power time, and the current I2 from the current source 3 is added to the current I1 from the current source 2. The output current value I1 of the current source 2 is controlled at an information reproducing time. The low power light intensity is held always to a fixed level by the control.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は半導体レーザから出た光
を光磁気ディスクに照射することで情報の記録・再生・
消去等を実行する光メモリシステムにおいて利用される
半導体レーザ駆動装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention irradiates a magneto-optical disk with light emitted from a semiconductor laser to record / reproduce information.
The present invention relates to a semiconductor laser driving device used in an optical memory system that executes erasing and the like.

【0002】[0002]

【従来の技術】光磁気ディスクの既に公知な構造は、ガ
ラス基板等の基体上に希土類→鉄合金の非晶質薄膜をス
パッタリングにて成膜して膜面に垂直な方向に磁化容易
軸を有する磁性膜を被覆して構成されるものであり、こ
の光磁気ディスクに半導体レーザビームを照射するヘッ
ド等を付加することで情報の記録・再生・消去を行なう
光メモリシステムが構成される。この光メモリシステム
において情報の記録はレーザビームを約1μmφ程度に
集光したものを上記磁性膜面に照射して該磁性膜の温度
を局所的に上昇させてその温度上昇部分の保持力を減少
させ同時に外部より補助磁場を印加することで磁化の向
きを反転させて行なう(消去も同様の方法で可能であ
る。)又記録された情報の再生は記録された磁性膜面に
記録時より弱い光量の半導体レーザによる直線偏光を照
射してその反射した光の磁場の影響による偏光面の傾き
を利用して光の強弱に変え、それを光検出器で検出して
行なう。
2. Description of the Related Art A known structure of a magneto-optical disk has a structure in which an amorphous thin film of a rare earth → iron alloy is formed on a substrate such as a glass substrate by sputtering and an easy axis of magnetization is perpendicular to the film surface. An optical memory system for recording / reproducing / erasing information is constructed by adding a head for irradiating a semiconductor laser beam to the magneto-optical disk. In this optical memory system, information is recorded by irradiating the magnetic film surface with a laser beam focused to about 1 μmφ to locally raise the temperature of the magnetic film and reduce the coercive force of the temperature rising portion. At the same time, the direction of magnetization is reversed by applying an auxiliary magnetic field from the outside (erasing can be performed in the same manner.) Also, the recorded information can be reproduced on the surface of the recorded magnetic film with a weaker light intensity than when recording. The linearly polarized light from the semiconductor laser is used to change the intensity of light using the inclination of the polarization plane due to the influence of the magnetic field of the reflected light, and the light is detected by a photodetector.

【0003】[0003]

【発明が解決しようとする課題】以上の構造から、半導
体レーザには記録時に高出力のレーザ光,再生時に低出
力のレーザ光を射出する構成が必要となり、これら2つ
のレベルの出力を速やかなる手段により切換えることが
その駆動装置に要求される。
From the above structure, the semiconductor laser requires a structure for emitting a high-output laser beam during recording and a low-output laser beam during reproduction, and the outputs of these two levels can be promptly achieved. Switching by means is required for the drive.

【0004】一方、光磁気ディスクの情報再生の原理で
ある光磁気効果(カー効果)はディスクからの反射光の
偏光特性を変化させることを利用しているため本質的に
半導体レーザへの帰還光を阻止することは困難である。
したがって帰還光に対してノイズの発生が現われないよ
うに半導体レーザを使用することが必要となるが、一般
に再生信号のS/N比に対しては高出力の光による記録
を行なう方が有利であるため、高出力半導体レーザの使
用が必要となる。しかし一般に高出力半導体レーザで
は、その出力端面の反射率が低いため帰還光の入射に対
して弱く、特に低出力時において帰還光によるノイズが
大きく現われてくる。よって高出力半導体レーザの使用
に際しては、ノイズの発生を抑制する手段を具備しなけ
ればならない。
On the other hand, the magneto-optical effect (Kerr effect), which is the principle of information reproduction of a magneto-optical disk, utilizes the fact that the polarization characteristic of the reflected light from the disk is changed, so that it is essentially the feedback light to the semiconductor laser. Is difficult to prevent.
Therefore, it is necessary to use a semiconductor laser so that noise does not appear in the feedback light, but it is generally more advantageous to perform recording with high-power light with respect to the S / N ratio of the reproduction signal. Therefore, it is necessary to use a high power semiconductor laser. However, in general, a high-power semiconductor laser is weak against the incidence of feedback light because its output end face has a low reflectance, and noise due to the feedback light appears particularly at low power. Therefore, when using a high-power semiconductor laser, it is necessary to provide means for suppressing the generation of noise.

【0005】また半導体レーザは温度特性を有し、周囲
温度によりそのしきい値電流が変動するためレーザ発振
の出力光強度が変化するが、しかし記録時のレーザの高
出力発振時に出力光強度がが変動すれば記録媒体に対し
て情報の書き込み不足や過多を生じさせ、システム全体
の情報処理の誤り率が劣化した。この事は再生時のレー
ザの低出力発振時においても同様で、出力光強度が変動
すれば再生信号のS/N比の劣化として現われてくる。
Further, the semiconductor laser has a temperature characteristic, and the output light intensity of the laser oscillation changes because the threshold current fluctuates depending on the ambient temperature. However, the output light intensity of the laser during the high output oscillation during recording changes. If the value fluctuates, insufficient or excessive writing of information occurs on the recording medium, and the error rate of information processing of the entire system deteriorates. This also applies to the low output oscillation of the laser during reproduction, and if the output light intensity fluctuates, it appears as deterioration of the S / N ratio of the reproduction signal.

【0006】以上の理由で高・低の両出力レベルにおい
てレーザ光を安定発振させることが必要不可欠であるこ
とが明白である。
For the above reasons, it is clear that stable oscillation of laser light is essential at both high and low output levels.

【0007】[0007]

【課題を解決するための手段】本発明は上述する課題を
解決するためになされたもので、光メモリシステムに組
み込まれる半導体レーザ駆動装置であって、半導体レー
ザをその発振しきい値付近まで駆動せしめる第1の電流
源と、該第1の電流源に対する付加によって記録媒体か
ら情報を再生するのに必要なレベルまで半導体レーザを
発振せしめる第2の電流源と、上記第1の電流源及び第
2の電流源に対する付加によって記録するのに必要なレ
ベルまで半導体レーザを発振せしめる第3の電流源とを
具備した半導体レーザ駆動装置を提供するものである。
The present invention has been made to solve the above problems, and is a semiconductor laser driving device incorporated in an optical memory system, which drives a semiconductor laser near its oscillation threshold. A first current source, a second current source which, when added to the first current source, oscillates a semiconductor laser to a level required to reproduce information from a recording medium, the first current source and the second current source. And a third current source that oscillates the semiconductor laser to a level required for recording by adding the current source to the semiconductor laser driving device.

【0008】また、本発明は、半導体レーザの出力光強
度を検出し、該検出に応じて前記第2の電流源の出力電
流値を制御せしめる制御回路を具備した半導体レーザ駆
動装置を提供するものである。
Further, the present invention provides a semiconductor laser driving device provided with a control circuit for detecting the output light intensity of a semiconductor laser and controlling the output current value of the second current source according to the detection. Is.

【0009】[0009]

【作用】これにより、上記のような光磁気ディスク等の
記録媒体を使用した情報再生装置への要求を解決した半
導体レーザ駆動装置を提供することが可能である。
As a result, it is possible to provide a semiconductor laser driving device which solves the demand for an information reproducing device using a recording medium such as a magneto-optical disk as described above.

【0010】[0010]

【実施例】上記目的を達成するために本発明は半導体レ
ーザ駆動電流を供給する3つの電流源を具備する構成と
したものである。
BEST MODE FOR CARRYING OUT THE INVENTION In order to achieve the above object, the present invention comprises three current sources for supplying a semiconductor laser driving current.

【0011】以下、本発明に係る一実施例を図面に基づ
き詳細に説明する。図1は本発明に係る一実施例による
半導体レーザ駆動装置を示すブロック図であり、図2は
図1の装置の動作説明のための波形図である。
An embodiment according to the present invention will be described in detail below with reference to the drawings. FIG. 1 is a block diagram showing a semiconductor laser driving device according to an embodiment of the present invention, and FIG. 2 is a waveform diagram for explaining the operation of the device of FIG.

【0012】図1において3つの電流源は半導体レーザ
を発振しきい値付近まで駆動する第1電流源(以下バイ
アス電流源1と呼ぶ。)、情報再生のための光強度まで
発振させる第2電流源(以下低出力分電流源2と呼
ぶ。)、さらに記録時の高出力発振を可能にする第3電
流源(以下高出力分電流源3と呼ぶ。)である。
In FIG. 1, three current sources are a first current source (hereinafter referred to as a bias current source 1) for driving a semiconductor laser near the oscillation threshold, and a second current for oscillating a light intensity for information reproduction. And a third current source (hereinafter referred to as high output component current source 3) that enables high output oscillation during recording.

【0013】情報記録時、半導体レーザはバイアス電流
源1、低出力分電流源2、高出力分電流源3の3つの電
流源により駆動される。また情報の再生時はバイアス電
流源1低出力分電流源2の2つの電流源で駆動されるこ
とになる。
During information recording, the semiconductor laser is driven by three current sources, a bias current source 1, a low output current source 2 and a high output current source 3. Further, when reproducing information, it is driven by two current sources, that is, the bias current source 1 and the low output current source 2.

【0014】低出力時の帰還光による半導体レーザのノ
イズの発生は、図1に示す様に高周波発振器6からの信
号によりスイッチング回路4において低出力分電流源2
からの電流I1を高速にスイッチングすることで抑制し
ている。スイッチングのデューティー比を50%と設定
すると再生時の光強度の平均値は、バイアス電流源1に
よる電流I0と電流I1とによる光強度P1の50%つま
りP1/2となる。
The generation of noise of the semiconductor laser due to the feedback light at the time of low output is caused by the signal from the high frequency oscillator 6 as shown in FIG.
The current I 1 from is suppressed by switching at high speed. When the switching duty ratio is set to 50%, the average value of the light intensity during reproduction is 50% of the light intensity P 1 due to the current I 0 and the current I 1 by the bias current source 1, that is, P 1/2 .

【0015】高出力時はこの低出力分電流源2に対する
高周波スイッチング動作を停止し、記録情報信号7に応
じてスイッチング回路4,5が駆動させられるので、低
出力分電流源2からの電流I1に加えて高出力分電流源
3からの電流I2がさらに付加されるため、出力光強度
は図2に示す様にP2となる。
At the time of high output, the high frequency switching operation for the low output current source 2 is stopped and the switching circuits 4 and 5 are driven according to the recording information signal 7, so that the current I from the low output current source 2 is generated. In addition to 1 , the current I 2 from the high output current source 3 is further added, so that the output light intensity becomes P 2 as shown in FIG.

【0016】ここで、情報再生時即ち低出力時は出力光
強度を光検知器9により検出しプリアンプ10を通して
この信号の値と基準電圧源12からの値とを比較器12
において比較し、この比較信号をローパスフィルター1
3に通過させ、その低周波成分によりパワーアップ14
を介して低出力分電流源2の出力電流値I1を制御す
る。この制御により低出力光強度P1/2は温度変化に
かかわらず常に一定に保持されることになる。一般に半
導体レーザは温度によりしきい値電流のみが変動するた
めしきい値からの線型部分の傾きは変化しない。したが
って高出力分電流源3の電流値I2は一定であるため、
低出力光強度P1/2が一定であれば高出力強度P2もま
た一定の光出力強度となる。
Here, at the time of reproducing information, that is, at the time of low output, the output light intensity is detected by the photodetector 9, and the value of this signal and the value from the reference voltage source 12 are passed through the preamplifier 10 to the comparator 12.
At the low-pass filter 1
3 and let the low frequency component power up 14
The output current value I 1 of the low output current source 2 is controlled via. Low output light intensity P 1/2 This control will be maintained constant at all times irrespective of the temperature change. Generally, in semiconductor lasers, only the threshold current varies with temperature, so the inclination of the linear portion from the threshold does not change. Therefore, since the current value I 2 of the high output current source 3 is constant,
If low output light intensity P 1/2 is constant high output power P 2 is also a constant light output intensity.

【0017】以上、半導体レーザの駆動電流源を3つの
独立した電流源により構成することで、自動出力光強度
制御(以下APCと呼ぶ)に関しても低出力発振時に電
流値I1を制御することで高・低両発振時における制御
が実現される。そしてAPC回路のダイナミック・レン
ジを大きくとる必要はないためAPC回路設計において
非常に有利である。
As described above, by configuring the driving current source of the semiconductor laser by three independent current sources, the current value I 1 can be controlled at the time of low output oscillation even in automatic output light intensity control (hereinafter referred to as APC). Control is realized during both high and low oscillations. Since it is not necessary to have a large dynamic range of the APC circuit, it is very advantageous in APC circuit design.

【0018】[0018]

【発明の効果】以上の如く、本発明によれば半導体レー
ザを発振しきい値付近まで駆動するバイアス電流源・情
報再生のための低出力分電流源・情報記録時の高出力分
電流源の3つの電流源により駆動することで、光磁気デ
ィスク等を記録媒体として使用した情報記録再生装置に
おける良好な半導体レーザ駆動装置を得ることができ
る。また3つの電流源の構成により駆動回路の設計が非
常に容易となり低コスト化が実現される。
As described above, according to the present invention, the bias current source for driving the semiconductor laser to near the oscillation threshold, the low output current source for reproducing information, and the high output current source for recording information are used. By driving with three current sources, it is possible to obtain a good semiconductor laser driving device in an information recording / reproducing device using a magneto-optical disk or the like as a recording medium. Further, the configuration of the three current sources makes it very easy to design the drive circuit and realizes cost reduction.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による半導体レーザ駆動装置
を示すブロック図である。
FIG. 1 is a block diagram showing a semiconductor laser driving device according to an embodiment of the present invention.

【図2】図1の装置の動作を説明するための波形図であ
る。
FIG. 2 is a waveform diagram for explaining the operation of the apparatus of FIG.

【符号の説明】[Explanation of symbols]

1 バイアス電流源 2 低出力分電流源 3 高出力分電流源 4,5 スイッチング回路 6 高周波発振器 7 記録情報 8 半導体レーザ 9 光検知器 10 プリアンプ 11 比較器 12 基準電圧源 13 ローパスフィルター 14 パワーアンプ 1 Bias Current Source 2 Low Output Current Source 3 High Output Current Source 4,5 Switching Circuit 6 High Frequency Oscillator 7 Recorded Information 8 Semiconductor Laser 9 Photodetector 10 Preamplifier 11 Comparator 12 Reference Voltage Source 13 Low Pass Filter 14 Power Amplifier

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 光メモリシステムに組み込まれる半導体
レーザ駆動装置であって、 半導体レーザをその発振しきい値付近まで駆動せしめる
第1の電流源と、該第1の電流源に対する付加によって
記録媒体から情報を再生するのに必要なレベルまで半導
体レーザを発振せしめる第2の電流源と、上記第1の電
流源及び第2の電流源に対する付加によって記録するの
に必要なレベルまで半導体レーザを発振せしめる第3の
電流源とを具備したことを特徴とする半導体レーザ駆動
装置。
1. A semiconductor laser driving device incorporated in an optical memory system, comprising: a first current source for driving a semiconductor laser near its oscillation threshold; and information from a recording medium by addition to the first current source. A second current source that oscillates the semiconductor laser to a level required to reproduce the data, and a second current source that oscillates the semiconductor laser to a level required to record by the addition to the first current source and the second current source. 3. A semiconductor laser drive device, comprising: a current source of 3.
【請求項2】 半導体レーザの出力光強度を検出し、該
検出に応じて前記第2の電流源の出力電流値を制御せし
める制御回路を具備したことを特徴とする請求項1に記
載の半導体レーザ駆動装置。
2. The semiconductor according to claim 1, further comprising a control circuit for detecting an output light intensity of the semiconductor laser and controlling an output current value of the second current source according to the detection. Laser drive device.
JP6007961A 1994-01-28 1994-01-28 Semiconductor laser driver Expired - Lifetime JP2648084B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6007961A JP2648084B2 (en) 1994-01-28 1994-01-28 Semiconductor laser driver

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6007961A JP2648084B2 (en) 1994-01-28 1994-01-28 Semiconductor laser driver

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP60033587A Division JPH0673191B2 (en) 1985-02-20 1985-02-20 Semiconductor laser drive device

Publications (2)

Publication Number Publication Date
JPH06318337A true JPH06318337A (en) 1994-11-15
JP2648084B2 JP2648084B2 (en) 1997-08-27

Family

ID=11680083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6007961A Expired - Lifetime JP2648084B2 (en) 1994-01-28 1994-01-28 Semiconductor laser driver

Country Status (1)

Country Link
JP (1) JP2648084B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1093170A (en) * 1996-09-10 1998-04-10 Fuji Xerox Co Ltd Laser diode drive circuit, semiconductor integrated circuit for driving laser diode, and image recorder

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6142182A (en) * 1984-08-02 1986-02-28 Matsushita Electric Ind Co Ltd Semiconductor laser drive circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6142182A (en) * 1984-08-02 1986-02-28 Matsushita Electric Ind Co Ltd Semiconductor laser drive circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1093170A (en) * 1996-09-10 1998-04-10 Fuji Xerox Co Ltd Laser diode drive circuit, semiconductor integrated circuit for driving laser diode, and image recorder

Also Published As

Publication number Publication date
JP2648084B2 (en) 1997-08-27

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