JPH06314543A - Method for forming thick-film pattern of plasma display panel - Google Patents

Abstract

PURPOSE:To form a good thick-film pattern by forming a subtractive masking layer from a photosensitive resin which has no surface tackiness after drying. CONSTITUTION:A subtractive masking layer to be formed on a thick-film-pattern forming material applied to a panel is formed from a photosensitive resin which has no surface tackiness after drying. Since the photosensitive resin is in liquid form, the thickness of the film can be adjusted and a high-definition pattern can be resolved, so a subtractive masking layer with a good pattern can be obtained. Also, the masking layer mates with even an irregular surface and provides higher adhesion strength, so peeling does not occur during developing processes and the masking layer bonded to a subject for subtractive processing can be made. Then subtractive processing can be achieved with a good pattern, and since the photosensitive resin has no surface tackiness when dried after being applied, the possibility of an exposure mask clinging to the resin and being soiled is eliminated. A good thick-film pattern can thus be formed.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a thick film pattern of a plasma display substrate, which comprises forming a thick film pattern of a barrier or an electrode on the plasma display substrate in a plasma display panel manufacturing process.

[0002]

2. Description of the Related Art Conventionally, when forming a thick film pattern of a barrier or an electrode on a plasma display substrate, a method of screen-printing a paste of a pattern forming material has been generally used. Since this method is complicated in process and it is difficult to obtain a good line width accuracy, recently, a pattern forming material is applied on a substrate with a predetermined film thickness, and it has a subtractive resistance on it. There has been proposed a thick film pattern forming method by a so-called subtractive processing method in which a desired thick film pattern is formed by sandblasting or liquid honing through the subtractive mask layer after forming the mask layer in a pattern.

[0003]

In the subtractive processing method described above, a negative type liquid resist called a dry film or OSBR is used as the subtractive mask layer. However, when using a dry film, the surface of the applied glass paste has minute irregularities and is not flat.Therefore, even with minute irregularities, the protrusions may pierce the film during lamination of the dry film, The dry film does not follow the irregularities on the paste surface, because there is a gap between the film and the paste at the part. Furthermore, when the barrier is formed, a step corresponding to the electrode is generated in the paste on the electrode and unevenness is formed on the entire substrate, so that the dry film may not follow the paste even more. Therefore, if patterning is performed in this state, the mask layer peels off in the developing process, and a good pattern cannot be formed in a portion that does not follow the unevenness of the paste, and a desired barrier is formed in the next subtractive processing stage. There is a problem that can not be obtained. Further, since the dry film has a thickness of 30 μm even if it is thin, it is difficult to resolve a high-definition pattern. On the other hand, when a liquid resist is used, although these problems are reduced, the OSBR used has adhesiveness on the surface of the film after coating, and therefore, when contact exposure is performed, OSBR is left on the exposure mask. It sticks and gets dirty. Therefore, in order to prevent this situation, a tack prevention layer must be provided on the resist layer in use, and there is a problem that the number of steps increases.

The present invention has been made in view of the above problems, and an object thereof is to be in close contact with a workpiece to be subtracted and capable of forming a high-definition pattern. It is an object of the present invention to provide a thick film pattern forming method that can obtain a subtractive mask layer that does not require a tack prevention layer, and can thereby form a good thick film pattern by subtractive processing.

[0005]

In order to achieve the above object, the present invention applies a pattern forming material to be a barrier or an electrode on a plasma display substrate in a predetermined thickness in advance, and forms a desired pattern thereon. In the method for forming a thick film pattern of a plasma display substrate, which comprises forming a target barrier or electrode pattern by subtractive processing through the subtractive mask layer after forming the subtractive mask layer, It is characterized in that the mask layer is formed of a photosensitive resin that does not stick to the surface after drying.

The subtractive processing may use sandblasting or liquid honing. The subtractive mask layer is preferably formed with a thickness of 5 to 20 μm. That is, if the film thickness is 5 μm or less, a good pattern cannot be obtained after the subtractive processing due to a problem with the subtractive resistance, and conversely, if the film thickness is 20 μm or more, the resolution is poor and a high-definition pattern can be obtained. Because you can't.

As the above-mentioned photosensitive resin, a photosensitive resin containing a water-soluble resin matrix and a photopolymerizable polyfunctional monomer as main components can be used. As the water-soluble resin matrix, a partially saponified product of polyvinyl alcohol-polyvinyl acetate-crotonic acid copolymer, polyvinyl alcohol-polyvinyl acetate-methacrylic acid, or alcohol-soluble nylon can be used, while photopolymerization is used. As the polyfunctional monomer, pentaerythritol triacrylate, tetraacrylate,
Methacrylate can be used. When a photosensitive resin of this type is used, the mask layer is peeled off with an aqueous sodium periodate solution after the subtractive processing.

As the above-mentioned photosensitive resin, a photosensitive resin containing polyvinyl alcohol, polyvinyl acetate emulsion and diazo resin as main components, or
A photosensitive resin containing a photosensitive polyvinyl alcohol, a polyvinyl alcohol and a polyvinyl acetate emulsion as a main component can be used. In the former case,
For example, it is preferable to use 10 parts by weight of polyvinyl alcohol, 20 to 60 parts by weight of polyvinyl acetate emulsion with a solid content of 50%, and 0.5 to 1.5 parts by weight of diazo resin. In the latter case, as the photosensitive polyvinyl alcohol, one having a formylstyrylpyridinium group (stilvalizolium group) in a part of the hydroxyl group of the polyalcohol can be used. And
When these photosensitive resins are used, the mask layer is peeled off with a sodium hypochlorite or perhalogen acid aqueous solution after the subtractive processing.

As the above-mentioned photosensitive resin, a photosensitive resin containing gelatin, an acrylamide derivative and a redox photopolymerization initiator as main components can be used. As the acrylamide polymer, acrylamide or N, N'-methylenebisacrylamide can be used, and as the redox photopolymerization initiator, iron (III) ammonium citrate or iron (III) ammonium oxalate can be used. it can. When this photosensitive resin is used, the mask layer is removed with a proteolytic enzyme after the subtractive processing.

[0010]

In the thick film pattern forming method having the above-mentioned structure, since the photosensitive resin used for the subtractive mask layer is liquid, the film thickness can be adjusted, which enables resolution of a high-definition pattern. As a result, a subtractive mask layer with a good pattern can be obtained, and since adhesion is increased by following uneven surfaces, peeling does not occur during the development process. An active mask layer is obtained. Therefore, it is possible to perform the subtractive processing with the subtractive mask layer having a good pattern and being in close contact with the workpiece to be subtracted. Further, when the above-mentioned photosensitive resin is applied and then dried, the surface loses its tackiness, so that the exposure mask does not stick to and become dirty.

[0011]

【Example】

(Example 1) Copolymer of vinyl acetate and methacrylic acid (9
Pentaerythritol triacrylate and benzoin methyl ether were added to the 40% saponified product of 7: 3) and well stirred, and this was left in a cool dark place to defoam. Then, this photosensitive resin was applied by a roller coater onto a glass paste applied in advance to a glass substrate with a film thickness of 150 μm by a blade coater or screen printing.
The film thickness was 10 to 15 μm. In this case, the viscosity of the photosensitive resin can be easily adjusted by changing the amount of water. Then
It was dried at room temperature and then exposed through a mask having a predetermined pattern. The exposure conditions are an intensity of 700 μW / cm ² and an irradiation dose of 70 mJ / c when measured at 350 nm.
m ² . Then, after dipping in water for 1 to 2 minutes, spray development was carried out to obtain a desired subtractive mask layer. Next, when alumina # 1000 was used as an abrasive and sandblasting was performed at 3 kgf / cm ² , the target pattern could be obtained without peeling the mask layer from the glass paste. Next, this was immersed in an aqueous solution of sodium periodate and washed with water, whereby the mask layer could be peeled off, and a good thick film pattern could be formed on the glass substrate.

Example 2 10 g of polyvinyl alcohol (saponification degree: 88%, average degree of polymerization: 1400) was added to 50 g of water.
And mixed with vinyl acetate emulsion (solid content 50%). To this, 1.5 g of diazo resin (powder) dissolved in 10 g of water was added and well stirred, and after adding an antifoaming agent, the mixture was left in a cool dark place to defoam. Then, this photosensitive resin was applied by a roller coater onto a glass paste applied in advance to a glass substrate with a film thickness of 150 μm by a blade coater or screen printing. The film thickness was 10 to 15 μm. In this case, the viscosity of the photosensitive resin can be easily adjusted by changing the amount of water. Then, it was dried at room temperature and then exposed through a mask having a predetermined pattern. The exposure conditions are an intensity of 700 μW / cm ² and a dose of 100 mJ / cm ² when measured at 365 nm.
Is. Then, after dipping in water for 1 to 2 minutes, spray development was carried out to obtain a desired subtractive mask layer. Then, using alumina # 1000 as an abrasive,
When sandblasting was performed at 3 kgf / cm ² , the target pattern could be obtained without peeling the mask layer from the glass paste. Next, this was immersed in a perhalogen acid aqueous solution and washed with water, whereby the mask layer could be peeled off, and a good thick film pattern could be formed on the glass substrate.

(Example 3) Acrylamide and ammonium iron (III) oxalate are mixed in gelatin. And
This photosensitive resin was applied by a roller coater onto a glass paste which was applied in advance with a film thickness of 150 μm on a glass substrate by a blade coater or screen printing. The film thickness was 10 to 15 μm. Then, it was dried at room temperature and then exposed through a mask having a predetermined pattern. Exposure conditions, intensity 700μW / cm ² when measured at 365 nm, a dose 70 mJ / cm ^2.
After that, when this is immersed in 0.5 to 3% hydrogen peroxide solution for 1 to 2 minutes, the iron in which ferric ions have been reduced to ferrous ions by exposure is oxidized again. At this time, OH radicals are generated to start the polymerization of acrylamide, and gelatin is changed to be water-insoluble. Subsequently, the desired mask layer for subtractive layer was obtained by immersing in warm water of 40 to 43 ° C. for 1 to 2 minutes, spray developing, and finally immersing in cold water and washing well. Next, alumina # 10 as an abrasive
No. 00 was used for sand blasting at 3 kgf / cm ² , and the target pattern could be obtained without the mask layer peeling from the glass paste. Next, the entire sandblasted substrate is wetted with warm water, sprinkled with a proteolytic enzyme, left for 2 to 5 minutes, and then spray-washed to remove the mask layer, which is good on a glass substrate. It was possible to form a thick film pattern.

[0014]

As described above, according to the method for forming a thick film of a plasma display substrate of the present invention, since the photosensitive resin used for the subtractive mask layer is liquid, the film thickness can be easily adjusted. Since a mask layer that can form a high-definition pattern and that does not separate from the thick film pattern forming material during development can be obtained, subtractive processing is performed through a mask layer that is a good pattern and is in close contact with the thick film pattern forming material. As a result, a thick film having a good pattern can be formed. Further, the development of the photosensitive resin to be the subtractive mask layer is simple because it uses water or warm water, and the tack-preventing layer is formed on the mask as in the case of forming the mask layer with a liquid resist called OSBR. Since the mask layer is formed in a single layer without the need to provide the above, it is possible to reduce the number of steps for forming the subtractive mask.

Claims (7)

[Claims] 1. A subtractive mask layer having a desired pattern is formed by applying a pattern forming material to be a barrier or an electrode in advance to a plasma display substrate in a predetermined thickness, and forming a subtractive mask layer having a desired pattern thereon. In the method for forming a thick film pattern of a plasma display substrate for forming a target barrier or electrode pattern by subtractive processing through, the subtractive mask layer is formed by a photosensitive resin that does not stick to the surface after drying. A method for forming a thick film pattern on a plasma display substrate, the method comprising: forming. 2. The method for forming a thick film pattern on a plasma display substrate according to claim 1, wherein sandblasting is used for the subtractive processing. 3. The method for forming a thick film pattern on a plasma display substrate according to claim 1, wherein liquid honing is used for the subtractive processing. 4. The photosensitive resin containing a water-soluble resin matrix and a photopolymerizable polyfunctional monomer as main components is used as the photosensitive resin.
Alternatively, the method for forming a thick film pattern on a plasma display substrate according to the above item 3. 5. The plasma display according to claim 1, wherein a photosensitive resin containing polyvinyl alcohol, polyvinyl acetate emulsion and diazo resin as main components is used as the photosensitive resin. Method for forming thick film pattern on substrate. 6. The photosensitive resin containing a photosensitive polyvinyl alcohol, polyvinyl alcohol, or polyvinyl acetate emulsion as a main component is used as the photosensitive resin. Of forming a thick film pattern on a plasma display substrate of. 7. The plasma display substrate according to claim 1, wherein a photosensitive resin containing gelatin, an acrylamide derivative and a redox photopolymerization initiator as a main component is used as the photosensitive resin. Thick film pattern forming method.