JPH0631222U - Surface acoustic wave resonator - Google Patents

Surface acoustic wave resonator

Info

Publication number
JPH0631222U
JPH0631222U JP7248592U JP7248592U JPH0631222U JP H0631222 U JPH0631222 U JP H0631222U JP 7248592 U JP7248592 U JP 7248592U JP 7248592 U JP7248592 U JP 7248592U JP H0631222 U JPH0631222 U JP H0631222U
Authority
JP
Japan
Prior art keywords
surface acoustic
acoustic wave
wave resonator
weighted
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7248592U
Other languages
Japanese (ja)
Inventor
昭紀 石井
正 神田
Original Assignee
国際電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 国際電気株式会社 filed Critical 国際電気株式会社
Priority to JP7248592U priority Critical patent/JPH0631222U/en
Publication of JPH0631222U publication Critical patent/JPH0631222U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】 【目的】IDT電極に重み付けが施された弾性表面波共
振子の高次モードによるスプリアスを抑圧する。 【構成】IDT電極8の重み付け形状を示す稜線7と電
極指5の切断線とをほぼ一致させて、重み付けのための
電極指間隙6による表面波の乱れを軽減した。 【効果】VCOの発振素子として用いたときの周波数飛
びの現象が抑圧された。
(57) [Abstract] [Purpose] Suppressing spurious due to higher-order modes of a surface acoustic wave resonator with weighted IDT electrodes. [Structure] A ridge line 7 showing a weighted shape of an IDT electrode 8 and a cutting line of an electrode finger 5 are substantially aligned with each other to reduce disturbance of a surface wave due to an electrode finger gap 6 for weighting. [Effect] The frequency jump phenomenon when used as an oscillation element of a VCO was suppressed.

Description

【考案の詳細な説明】[Detailed description of the device]

【0001】[0001]

【産業上の利用分野】[Industrial applications]

本考案は、圧電基板上にすだれ状電極変換器が形成された弾性表面波共振子に 関し、特に、すだれ状電極変換器に重み付けが施された弾性表面波共振子に関す るものである。 The present invention relates to a surface acoustic wave resonator in which a interdigital transducer is formed on a piezoelectric substrate, and more particularly to a surface acoustic wave resonator in which the interdigital transducer is weighted.

【0002】[0002]

【従来の技術】[Prior art]

代表例として、電気機械結合係数(K2 )がレーリ(Rayleigh)波型の弾性表 面波(P+SV波)に比べて格段に大きいラブ波(SH波)型弾性表面波共振子 について述べる。 図3(a)は菱形重み付けを施したラブ波型弾性表面波共振子の従来の構成例 を示す平面図、(b),(c)は(a)の円で囲った4A部の部分拡大図である 。図3において、1は圧電基板、2はすだれ状電極変換器(Inter Digital Tran sducer,以下IDTと略記する)、3,4は接続用端子、5は電極指、6は重み 付けを施すために電極指5を切断した間隙(以下GAPとする)であり、イ,ロ はその切断線である。7は重み付けの稜線を示す。 図3に示す如くLiNbO3 (ニオブ酸リチウム)回転Y板などの圧電基板1 上に、金(Au),銀(Ag),白金(Pt)等の重金属のIDT電極2を付着 させることにより、基板表面に存在する伝搬減衰の大きな擬似弾性表面波を減衰 のないラブ波型表面波とし、かつ、反射器の不要な弾性表面波共振子が構成され ている。 図3の例では、弾性表面波共振子のインピーダンス特性を改善するため、ID T電極に菱形状の重み付けが施されている。As a typical example, a Love wave (SH wave) type surface acoustic wave resonator whose electromechanical coupling coefficient (K 2 ) is significantly larger than that of a Rayleigh wave type surface acoustic wave (P + SV wave) will be described. FIG. 3 (a) is a plan view showing an example of a conventional structure of a rhombic weighted Love wave type surface acoustic wave resonator, and FIGS. 3 (b) and 3 (c) are partially enlarged views of a circled portion 4A of FIG. It is a figure. In FIG. 3, 1 is a piezoelectric substrate, 2 is a interdigital transducer (hereinafter abbreviated as IDT), 3 and 4 are connection terminals, 5 is electrode fingers, and 6 is for weighting. A gap (hereinafter referred to as GAP) obtained by cutting the electrode finger 5, and a and b are cutting lines thereof. Reference numeral 7 indicates a weighted edge line. By attaching a heavy metal IDT electrode 2 such as gold (Au), silver (Ag) or platinum (Pt) onto a piezoelectric substrate 1 such as a LiNbO 3 (lithium niobate) rotating Y plate as shown in FIG. A pseudo-surface acoustic wave with large propagation attenuation existing on the substrate surface is used as a non-attenuated Love wave type surface wave, and a surface acoustic wave resonator without a reflector is constructed. In the example of FIG. 3, in order to improve the impedance characteristics of the surface acoustic wave resonator, diamond-shaped weighting is applied to the IDT electrode.

【0003】[0003]

【考案が解決しようとする課題】[Problems to be solved by the device]

しかし、図3(c)に示す如く、GAP6の切断線イ,ロは重み付けの稜線7 に対して一致しておらず、局所的に重み付け精度が悪くなりIDT電極が非調和 高次の共振モードと結合しスプリアス応答の原因となると考えられる。 一般に、弾性表面波共振子を用いて電圧制御発振器(VCO)を構成する場合 に、共振子に極く小さなスプリアスが存在しても周波数飛びの原因となるため、 スプリアスのないことが要求される。 本考案の目的は、以上の問題点を解決し、スプリアス応答を抑圧した弾性表面 波共振子を提供することにある。 However, as shown in FIG. 3C, the cutting lines a and b of the GAP 6 do not coincide with the weighting ridge line 7, and the weighting accuracy is locally deteriorated, and the IDT electrode is anharmonic. It is thought that they combine with and cause a spurious response. Generally, when a surface acoustic wave resonator is used to form a voltage controlled oscillator (VCO), even if there is a very small spurious in the resonator, it causes frequency skipping, and therefore it is required that there be no spurious. . An object of the present invention is to solve the above problems and provide a surface acoustic wave resonator with suppressed spurious responses.

【0004】[0004]

【課題を解決するための手段】[Means for Solving the Problems]

本考案の弾性表面波共振子は、圧電基板上に、重み付けが施されたすだれ状電 極変換器が形成された弾性表面波共振子において、 前記すだれ状電極変換器に施された前記重み付けの形状を示す稜線と、電極指 を切断する切断線とがほぼ一致するような電極指の間隙が設けられたことを特徴 とするものである。 The surface acoustic wave resonator of the present invention is a surface acoustic wave resonator in which a weighted interdigital transducer is formed on a piezoelectric substrate, and the weighted interdigital transducer is applied to the interdigital transducer. It is characterized in that a gap between the electrode fingers is provided so that the ridgeline showing the shape and the cutting line for cutting the electrode finger are substantially coincident with each other.

【0005】[0005]

【実施例】【Example】

以下、図面により本考案を詳細に説明する。 代表例として、ラブ波型弾性表面波共振子について述べる。図1(a)は本考 案の第1の実施例による菱形重み付けを施してあるラブ波型弾性表面波共振子の 電極構造を示す平面図、(b)は(a)の円で囲った1Aの部分拡大図である。 図1において、1は圧電基板、8は菱形重み付けの稜線7と電極指の切断線とを 一致させてGAPを構成したIDT、3,4は接続用端子を示す。 Hereinafter, the present invention will be described in detail with reference to the drawings. As a typical example, a Love wave type surface acoustic wave resonator will be described. FIG. 1A is a plan view showing the electrode structure of a rhombus-weighted surface acoustic wave resonator according to a first embodiment of the present invention, and FIG. 1B is enclosed by a circle in FIG. It is a partially enlarged view of 1A. In FIG. 1, reference numeral 1 is a piezoelectric substrate, 8 is an IDT in which a ridge line 7 for diamond weighting and a cutting line of an electrode finger are aligned with each other to form a GAP, and 3 and 4 are connection terminals.

【0006】 図2(a)は本考案の第2の実施例によるCOSINE状の重み付けを施して あるラブ波型弾性表面波共振子の電極構造を示す平面図、(b)は(a)の円3 Aの部分拡大図である。圧電基板は図示を省略した。図2において、11はCO SINE状の重み付け稜線12と電極指の切断線とを一致させてGAPを構成し たIDT、3,4は接続用端子を示す。FIG. 2A is a plan view showing an electrode structure of a Love wave type surface acoustic wave resonator which is weighted in a COSINE manner according to a second embodiment of the present invention, and FIG. It is a partially expanded view of a circle 3A. Illustration of the piezoelectric substrate is omitted. In FIG. 2, reference numeral 11 denotes an IDT in which a CO SINE-shaped weighting ridgeline 12 and a cutting line of an electrode finger are aligned to form a GAP, and reference numerals 3 and 4 denote connection terminals.

【0007】[0007]

【考案の効果】[Effect of device]

以上詳細に説明したように、本考案によれば、GAPの切断線が重み付けの稜 線に一致した電極構造のため、重み付け精度が向上しスプリアス応答抑圧に対し 実用上極めて効果がある。 As described in detail above, according to the present invention, the electrode structure is such that the cutting line of GAP coincides with the ridge of weighting, so that the weighting accuracy is improved and the spurious response suppression is extremely effective in practice.

【図面の簡単な説明】[Brief description of drawings]

【図1】本考案の第1の実施例を示す電極構成例図であ
る。
FIG. 1 is an electrode configuration example diagram showing a first embodiment of the present invention.

【図2】本考案の第2の実施例を示す電極構成例図であ
る。
FIG. 2 is a diagram showing an example of an electrode structure showing a second embodiment of the present invention.

【図3】従来の菱形重み付けを施した弾性表面波共振子
の構成例図である。
FIG. 3 is a diagram showing a configuration example of a conventional rhombus-weighted surface acoustic wave resonator.

【符号の説明】[Explanation of symbols]

1 圧電基板 2 IDT 3,4 接続用端子 5 電極指 6 間隙 7 稜線 8,11 IDT 12 稜線 1 Piezoelectric Substrate 2 IDT 3,4 Connection Terminal 5 Electrode Finger 6 Gap 7 Ridge Line 8,11 IDT 12 Ridge Line

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 【請求項1】 圧電基板上に、重み付けが施されたすだ
れ状電極変換器が形成された弾性表面波共振子におい
て、 前記すだれ状電極変換器に施された前記重み付けの形状
を示す稜線と、電極指を切断する切断線とがほぼ一致す
るような電極指の間隙が設けられたことを特徴とする弾
性表面波共振子。
1. A surface acoustic wave resonator in which a weighted interdigital transducer is formed on a piezoelectric substrate, and a ridge line indicating the weighted shape applied to the interdigital transducer, A surface acoustic wave resonator, characterized in that a gap between the electrode fingers is provided so that a cutting line for cutting the electrode fingers substantially coincides with the cutting line.
JP7248592U 1992-09-25 1992-09-25 Surface acoustic wave resonator Pending JPH0631222U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7248592U JPH0631222U (en) 1992-09-25 1992-09-25 Surface acoustic wave resonator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7248592U JPH0631222U (en) 1992-09-25 1992-09-25 Surface acoustic wave resonator

Publications (1)

Publication Number Publication Date
JPH0631222U true JPH0631222U (en) 1994-04-22

Family

ID=13490678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7248592U Pending JPH0631222U (en) 1992-09-25 1992-09-25 Surface acoustic wave resonator

Country Status (1)

Country Link
JP (1) JPH0631222U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012132877A1 (en) * 2011-03-28 2012-10-04 京セラ株式会社 Acoustic wave element and acoustic wave device using same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012132877A1 (en) * 2011-03-28 2012-10-04 京セラ株式会社 Acoustic wave element and acoustic wave device using same
JP5833102B2 (en) * 2011-03-28 2015-12-16 京セラ株式会社 Elastic wave device and elastic wave device using the same
US9350320B2 (en) 2011-03-28 2016-05-24 Kyocera Corporation Acoustic wave element and acoustic wave device using same

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