JPH06310762A - Led device - Google Patents
Led deviceInfo
- Publication number
- JPH06310762A JPH06310762A JP9434093A JP9434093A JPH06310762A JP H06310762 A JPH06310762 A JP H06310762A JP 9434093 A JP9434093 A JP 9434093A JP 9434093 A JP9434093 A JP 9434093A JP H06310762 A JPH06310762 A JP H06310762A
- Authority
- JP
- Japan
- Prior art keywords
- insulating substrate
- light emitting
- emitting diode
- conductive layer
- insulating board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/14—Structural association of two or more printed circuits
- H05K1/141—One or more single auxiliary printed circuits mounted on a main printed circuit, e.g. modules, adapters
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
Landscapes
- Led Devices (AREA)
- Mounting Components In General For Electric Apparatus (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
- Led Device Packages (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は小型のチップ化された発
光ダイオード装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a small chip type light emitting diode device.
【０００２】[0002]
【従来の技術】近年、チップ化された小型の略箱型形状
をした発光ダイオード装置が提案されている。この中で
例えば特開平４−１０２３７８号公報の装置を図８の断
面図に示す。この図に於て、絶縁基板３１の側面に平面
状凹部３２が形成され、第１及び第２導電層３３と３４
が絶縁基板３１の表面に各々離れて位置し、凹部３２と
裏面の端部近傍に相対して形成されている。発光ダイオ
ード３５が第１導電層３３上に載置され、透光性樹脂３
６が絶縁基板３１の表面の中央近傍に形成されている。
この様に反射枠を設けないで、透光性樹脂３６を設ける
ことにより、広い範囲の指向特性を得る試みがなされて
いる。2. Description of the Related Art In recent years, a light emitting diode device having a chip-like, small and substantially box shape has been proposed. Among them, for example, the device disclosed in Japanese Patent Laid-Open No. 4-102378 is shown in the sectional view of FIG. In this figure, a flat concave portion 32 is formed on the side surface of the insulating substrate 31, and the first and second conductive layers 33 and 34 are formed.
Are located apart from each other on the surface of the insulating substrate 31, and are formed so as to face each other in the vicinity of the recess 32 and the end portion of the back surface. The light emitting diode 35 is placed on the first conductive layer 33, and the transparent resin 3
6 is formed near the center of the surface of the insulating substrate 31.
As described above, an attempt has been made to obtain a wide range of directional characteristics by providing the translucent resin 36 without providing the reflection frame.
【０００３】[0003]
【発明が解決しようとする課題】この様な発光ダイオー
ド装置の指向特性を図７の点線で示す。この特性で判る
様に、指向特性の範囲は頂角±約５０°であり、面照明
装置等に用いるには、未だ指向角度が狭い。本発明者が
その原因を究明したところ、透光性樹脂３６の幅Ｄが小
さいからである。それを解決するために、透光性樹脂３
６の幅Ｄを絶縁基板３１の幅Ｅと略同じに形成する事を
試みた。しかし透光性樹脂３６の垂れが凹部３２に溜ま
り、回路基板３７上の導電層３８の半田３９との固定を
妨害し、結果として回路基板３７との固定が不十分にな
る。また絶縁基板３１の幅Ｅを大きくする事は装置の大
型化につながり好ましくない。故に本発明はかかる欠点
を鑑みて、凹部に於ける透光性樹脂の垂れを防止して回
路基板との固定を確実にし、かつ広い指向特性を与える
発光ダイオード装置を提供するものである。The directional characteristic of such a light emitting diode device is shown by the dotted line in FIG. As can be seen from this characteristic, the range of the directional characteristic is an apex angle of about ± 50 °, and the directional angle is still narrow for use in a surface lighting device or the like. This is because the inventors of the present invention have investigated the cause and found that the width D of the transparent resin 36 is small. In order to solve it, translucent resin 3
An attempt was made to form the width D of 6 to be substantially the same as the width E of the insulating substrate 31. However, the dripping of the translucent resin 36 accumulates in the concave portion 32 and interferes with the fixing of the conductive layer 38 on the circuit board 37 to the solder 39, resulting in insufficient fixing to the circuit board 37. Further, increasing the width E of the insulating substrate 31 leads to an increase in the size of the device, which is not preferable. Therefore, in view of the above drawbacks, the present invention provides a light emitting diode device which prevents the translucent resin from dripping in the concave portion to securely fix the resin to the circuit board and provides a wide directional characteristic.
【０００４】[0004]
【課題を解決するための手段】本発明は上述の課題を解
決するために、相対する側面に於て底面から途中の高さ
まで平面状凹部が形成されかつ凹部の上方を覆う様に形
成された絶縁基板と、各々絶縁基板の表面上に離れて位
置しかつ絶縁基板の相対する前記凹部と裏面の相対する
端部近傍に連なって設けられた第１及び第２導電層と、
第１導電層の表面に載置され第２導電層に配線された発
光ダイオードと、発光ダイオードを覆い絶縁基板の略全
表面上に形成された透光性樹脂を設けるものである。In order to solve the above-mentioned problems, the present invention is formed so that flat recesses are formed on opposite side surfaces from the bottom surface to an intermediate height and cover the recesses. An insulating substrate, and first and second conductive layers that are located separately on the front surface of the insulating substrate and that are provided continuously in the vicinity of the opposite end portions of the concave surface and the rear surface of the insulating substrate that face each other,
A light emitting diode mounted on the surface of the first conductive layer and wired to the second conductive layer, and a translucent resin formed on substantially the entire surface of the insulating substrate to cover the light emitting diode are provided.
【０００５】[0005]
【作用】本発明は上述の様に、側面に於て底面から途中
の高さまで形成された凹部の上方を覆う様に絶縁基板を
形成する。そして、その上に透光性樹脂を設けるので、
透光性樹脂の垂れが凹部上の第１及び第２導電層を覆わ
ないから、凹部での半田付けが確実となる。また発光ダ
イオードを覆う様に透光性樹脂を絶縁基板の略全表面上
に覆うので、広い指向特性が得られる。According to the present invention, as described above, the insulating substrate is formed so as to cover the concave portion formed on the side surface from the bottom surface to a height midway. And since the translucent resin is provided on it,
Since the dripping of the translucent resin does not cover the first and second conductive layers on the concave portion, soldering in the concave portion is reliable. Further, since the translucent resin is covered on substantially the entire surface of the insulating substrate so as to cover the light emitting diode, a wide directional characteristic can be obtained.
【０００６】[0006]
【実施例】以下に本発明の実施例を図１と図２に従って
説明する。図１は本実施例の発光ダイオード装置の平面
図、図２は図１のＡＡ断面図である。これらの図に於
て、第１の絶縁基板１は例えば厚さ０．２〜０．６ｍｍ
のセラミックからなり、対向する側面に例えば半円状
の、平面状凹部２が形成されている。第１の絶縁基板１
の表面の端部近傍に導電層３と、側面の凹部２の上に導
電層４と、裏面の端部近傍に導電層５が形成されてい
る。これらの導電層３、４、５に相対する様に、第１の
絶縁基板１の表面の端部近傍と側面の凹部２の上と裏面
の端部近傍に、各々導電層６、７、８が形成されてい
る。Embodiments of the present invention will be described below with reference to FIGS. FIG. 1 is a plan view of the light emitting diode device of this embodiment, and FIG. 2 is a sectional view taken along line AA of FIG. In these figures, the first insulating substrate 1 has a thickness of 0.2 to 0.6 mm, for example.
Of ceramics, and a planar concave portion 2 having a semicircular shape, for example, is formed on the opposite side surfaces. First insulating substrate 1
A conductive layer 3 is formed near the edge of the front surface, a conductive layer 4 is formed on the concave portion 2 on the side surface, and a conductive layer 5 is formed near the edge of the back surface. The conductive layers 6, 7, 8 are respectively provided near the edge of the front surface of the first insulating substrate 1 and near the edge of the back surface of the concave portion 2 of the first insulating substrate 1 so as to face the conductive layers 3, 4, 5, respectively. Are formed.
【０００７】第２の絶縁基板９は例えば厚さ０．１〜
０．３ｍｍのセラミックからなり、第１の絶縁基板１と
略同じ縦と横の長さを有する。第２の絶縁基板９の表面
に導電層１０、１１が離れて形成されている。導電層１
０、１１に各々スルーホール部１２、１３が形成され、
そのスルーホール部１２、１３の孔の側面と底面にも導
電層が形成され、各々導電層１０と３、及び導電層１１
と６とが電気的に接続されている。各導電層３、４、
５、６、７、８、１０、１１及びスルーホール部１２、
１３は例えばタングステンの層の上にニッケルの層が積
層されたものを金メッキされたものである。導電層３〜
８が設けられた第１の絶縁基板１上に導電層１０、１１
が設けられた第２の絶縁基板９を積層して焼成する事に
より、第１及び第２の絶縁基板１と９は一体化され、絶
縁基板１３ａが構成されている。The second insulating substrate 9 has a thickness of 0.1 to 0.1, for example.
It is made of ceramic of 0.3 mm and has substantially the same length and width as the first insulating substrate 1. Conductive layers 10 and 11 are separately formed on the surface of the second insulating substrate 9. Conductive layer 1
Through hole portions 12 and 13 are formed in 0 and 11, respectively,
Conductive layers are also formed on the side surfaces and bottom surfaces of the holes of the through-hole portions 12 and 13, and the conductive layers 10 and 3 and the conductive layer 11 are formed, respectively.
And 6 are electrically connected. Each conductive layer 3, 4,
5, 6, 7, 8, 10, 11 and the through hole portion 12,
Reference numeral 13 denotes, for example, a gold layer plated with a nickel layer on a tungsten layer. Conductive layer 3 ~
Conductive layers 10, 11 on the first insulating substrate 1 provided with 8
The first and second insulating substrates 1 and 9 are integrated by stacking and firing the second insulating substrate 9 provided with the insulating substrate 13a.
【０００８】上述の様に第１導電層１４は、第２の絶縁
基板９の表面上の導電層１０とスルーホール部１２と第
１の絶縁基板１の表面上の導電層３と凹部２上の導電層
４と裏面の端部近傍上の導電層５からなる。同様にして
第２導電層１５は導電層１１とスルーホール部１３と導
電層６、７、８からなる。また上述の様に、第１及び第
２の絶縁基板１、９の外形の大きさ（縦と横の長さ）が
略同じだから、第２の絶縁基板９は第１の絶縁基板１の
側面に形成された凹部２の上方を覆っている。As described above, the first conductive layer 14 includes the conductive layer 10 on the surface of the second insulating substrate 9, the through hole portion 12, the conductive layer 3 on the surface of the first insulating substrate 1, and the recess 2. Of the conductive layer 4 and the conductive layer 5 on the back surface near the edge. Similarly, the second conductive layer 15 is composed of the conductive layer 11, the through hole portion 13 and the conductive layers 6, 7, and 8. Further, as described above, since the outer dimensions of the first and second insulating substrates 1 and 9 (length and width) are substantially the same, the second insulating substrate 9 is a side surface of the first insulating substrate 1. It covers the upper part of the recess 2 formed in the.
【０００９】発光ダイオード１６は例えば燐化ガリウム
又は燐化ガリウム砒素からなり、１辺が２００〜４００
μｍの略さいころ状のものである。発光ダイオード１６
は第２の絶縁基板９の略中心に位置する様に第１導電層
１４上に導電性接着剤を介して載置され、第２導電層１
５上に金属細線により配線されている。The light emitting diode 16 is made of, for example, gallium phosphide or gallium arsenide phosphide and has one side of 200 to 400.
It is a die of approximately μm. Light emitting diode 16
Is placed on the first conductive layer 14 via a conductive adhesive so that the second conductive layer 1 is located substantially at the center of the second insulating substrate 9.
Wires are provided on the upper part 5 by a thin metal wire.
【００１０】透光性樹脂１７は例えばエポキシ樹脂等か
らなり、発光ダイオード１６を覆いかつ第２の絶縁基板
９の略全表面を覆う様に、導電層１０、１１上に形成さ
れている。この様に透光性樹脂１７の幅Ｂは第２の絶縁
基板９の幅Ｃと略同じ大きさに形成されている。上述の
部品により本発光ダイオード装置１８が構成されてい
る。The translucent resin 17 is made of, for example, an epoxy resin, and is formed on the conductive layers 10 and 11 so as to cover the light emitting diode 16 and substantially the entire surface of the second insulating substrate 9. In this way, the width B of the translucent resin 17 is formed to be substantially the same as the width C of the second insulating substrate 9. The light emitting diode device 18 is constituted by the above-mentioned components.
【００１１】次にこの発光ダイオード装置１８の固定に
ついて説明する。回路基板１９の表面に導電層２０、２
１が形成されている。この導電層２０、２１上に発光ダ
イオード装置１８が載置され、導電層４、５の周辺及び
導電層７、８の周辺が半田２２によって固定されてい
る。そして発光ダイオード装置１８は上述の様に、第１
の絶縁基板１の側面の凹部２を覆う様に第２の絶縁基板
９が積層され、その上に透光性樹脂１７が第２の絶縁基
板９の略全表面上に形成されている。故に製造中に於け
る透光性樹脂１７の垂れが凹部２上の第１及び第２導電
層１４、１５を覆わないので、凹部２に於ける半田付け
が確実となる。Next, the fixing of the light emitting diode device 18 will be described. Conductive layers 20, 2 are formed on the surface of the circuit board 19.
1 is formed. The light emitting diode device 18 is placed on the conductive layers 20 and 21, and the periphery of the conductive layers 4 and 5 and the periphery of the conductive layers 7 and 8 are fixed by solder 22. Then, the light emitting diode device 18 has the first
The second insulating substrate 9 is laminated so as to cover the concave portion 2 on the side surface of the insulating substrate 1, and the translucent resin 17 is formed on substantially the entire surface of the second insulating substrate 9 thereon. Therefore, the sagging of the translucent resin 17 during manufacturing does not cover the first and second conductive layers 14 and 15 on the recess 2, so that the soldering in the recess 2 is reliable.
【００１２】次に本発光ダイオード装置１８の製造につ
いて図３乃至図６に従い説明する。図３乃至図６は製造
工程を示す図である。最初に図３の様に、スルーホール
部２３が形成され導電層が形成された第１の絶縁基台２
４上に、各々分離して位置する導電層２５とスルーホー
ル部（図示せず）が形成された第２の絶縁基台２６が積
層される。Next, the manufacture of the light emitting diode device 18 will be described with reference to FIGS. 3 to 6 are views showing the manufacturing process. First, as shown in FIG. 3, the first insulating base 2 having the through-hole portion 23 and the conductive layer formed thereon is formed.
A second insulating base 26 having a conductive layer 25 and a through hole portion (not shown) formed separately is laminated on the substrate 4.
【００１３】更に、図４（ａ）の平面図と図４（ｂ）の
断面図に示す様に、導電層２５上に発光ダイオードが固
定され配線され、第１の絶縁基台２４上に中空の治具２
７が固定される。治具２７の中空部にエポキシ樹脂２８
が充填された後に、硬化される。図５（ａ）の平面図と
図５（ｂ）の断面図に示す様に、治具２７が取除かれる
と、第１の絶縁基台２４上に積層された第２の絶縁基台
２６の周辺にエポキシ樹脂２８が形成される。Further, as shown in the plan view of FIG. 4A and the sectional view of FIG. 4B, a light emitting diode is fixed and wired on the conductive layer 25, and a hollow is formed on the first insulating base 24. Jig 2
7 is fixed. Epoxy resin 28 in the hollow part of the jig 27
After it is filled, it is cured. As shown in the plan view of FIG. 5A and the sectional view of FIG. 5B, when the jig 27 is removed, the second insulating base 26 laminated on the first insulating base 24 is removed. An epoxy resin 28 is formed around the area.
【００１４】次に図６（ａ）の平面図と図６（ｂ）の断
面図に示す様に、各スルーホール部２３の中心を結ぶ様
に縦方向にダイシングし、各スルーホール部２３間の中
間を結ぶ様に横方向にダイシングして素子分割する事に
より、本発光ダイオード装置１８が得られる。Next, as shown in the plan view of FIG. 6 (a) and the sectional view of FIG. 6 (b), dicing is performed in the vertical direction so as to connect the centers of the through-hole portions 23, and between the through-hole portions 23. The present light emitting diode device 18 is obtained by laterally dicing and dividing the element so as to connect the middle of the above.
【００１５】更に図７に従い、本発光ダイオード装置１
８の指向特性を実線にて示す。この特性から判る様に、
指向特製の範囲は頂角±７０°であり、従来の装置の範
囲の約４０％増える。その結果、本発光ダイオード装置
１８は面照明装置等にも用いる事ができる。この理由は
再び図２に於て、上述した様に、透光性樹脂１７が第１
及び第２導電層１４、１５に垂れることがなく、透光性
樹脂１７の幅Ｂを第２の絶縁基板９の幅Ｃと略同じ位に
大きくできるからである。Further, referring to FIG. 7, the present light emitting diode device 1
The directivity characteristic of No. 8 is shown by a solid line. As you can see from this characteristic,
The custom orientation range is ± 70 ° apex, an increase of approximately 40% over the range of conventional devices. As a result, the light emitting diode device 18 can be used in a surface lighting device and the like. The reason for this is that, again in FIG. 2, as described above, the transparent resin 17 is the first
In addition, the width B of the transparent resin 17 can be made substantially the same as the width C of the second insulating substrate 9 without dripping on the second conductive layers 14 and 15.
【００１６】[0016]
【発明の効果】本発明は上述の様に、側面に於て底面か
ら途中の高さまで形成された凹部の上方を覆う様に絶縁
基板を形成する。その上に縁基板の略全表面上に透光性
樹脂を形成するので、透光性樹脂の垂れが凹部上の第１
及び第２導電層を覆わないから凹部での半田付けが確実
となり、本装置が回路基板に確実に固定される。また発
光ダイオードを覆う様に透光性樹脂を絶縁基板の略全表
面上に覆うので、広い指向特性が得られる。As described above, according to the present invention, the insulating substrate is formed so as to cover above the concave portion formed on the side surface from the bottom surface to the middle height. Since the translucent resin is formed on substantially the entire surface of the edge substrate, the dripping of the translucent resin causes the first resin on the concave portion
Also, since the second conductive layer is not covered, soldering in the recess is surely performed, and the device is securely fixed to the circuit board. Further, since the translucent resin is covered on substantially the entire surface of the insulating substrate so as to cover the light emitting diode, a wide directional characteristic can be obtained.
【図１】本発明の実施例に係る発光ダイオード装置の平
面図である。FIG. 1 is a plan view of a light emitting diode device according to an embodiment of the present invention.
【図２】図１のＡＡ断面図である。FIG. 2 is a sectional view taken along line AA of FIG.
【図３】本発明の実施例に係る発光ダイオード装置の製
造を説明する図面である。FIG. 3 is a diagram illustrating the manufacture of a light emitting diode device according to an embodiment of the present invention.
【図４】本発明の実施例に係る発光ダイオード装置の製
造を説明する図面である。FIG. 4 is a diagram illustrating the manufacture of a light emitting diode device according to an embodiment of the present invention.
【図５】本発明の実施例に係る発光ダイオード装置の製
造を説明する図である。FIG. 5 is a diagram illustrating manufacturing of a light emitting diode device according to an embodiment of the present invention.
【図６】本発明の実施例に係る発光ダイオード装置の製
造を説明する図面である。FIG. 6 is a diagram illustrating the manufacture of a light emitting diode device according to an embodiment of the present invention.
【図７】本発明の実施例に係る発光ダイオード装置及び
従来の発光ダイオード装置に関する指向特性図である。FIG. 7 is a directional diagram showing a light emitting diode device according to an embodiment of the present invention and a conventional light emitting diode device.
【図８】従来の発光ダイオード装置の断面図である。FIG. 8 is a cross-sectional view of a conventional light emitting diode device.
１ 第１の絶縁基板 ２ 凹部 ９ 第２の絶縁基板 １３ａ 絶縁基板 １４ 第１導電層 １５ 第２導電層 １６ 発光ダイオード １７ 透光性樹脂 1 1st insulating substrate 2 recessed part 9 2nd insulating substrate 13a insulating substrate 14 1st conductive layer 15 2nd conductive layer 16 light emitting diode 17 translucent resin
Claims (1)
まで平面状凹部が形成されかつその凹部の上方を覆う様
に形成された絶縁基板と、各々その絶縁基板の表面上に
離れて位置しかつその絶縁基板の相対する前記凹部と裏
面の相対する端部近傍に連なって設けられた第１及び第
２導電層と、その第１導電層の表面に載置されその第２
導電層に配線された発光ダイオードと、その発光ダイオ
ードを覆い前記絶縁基板の略全表面上に形成された透光
性樹脂を具備した事を特徴とする発光ダイオード装置。1. An insulating substrate having flat concave portions formed on the opposite side surfaces from a bottom surface to a height midway and covering the concave portions above the concave portions, and the insulating substrates are separately located on the surface of the insulating substrate. And the first and second conductive layers provided continuously in the vicinity of the opposite end portions of the back surface and the facing concave portion of the insulating substrate, and the second conductive layer placed on the surface of the first conductive layer and the second conductive layer.
A light emitting diode device comprising: a light emitting diode wired in a conductive layer; and a translucent resin covering the light emitting diode and formed on substantially the entire surface of the insulating substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9434093A JPH06310762A (en) | 1993-04-21 | 1993-04-21 | Led device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9434093A JPH06310762A (en) | 1993-04-21 | 1993-04-21 | Led device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06310762A true JPH06310762A (en) | 1994-11-04 |
Family
ID=14107566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9434093A Pending JPH06310762A (en) | 1993-04-21 | 1993-04-21 | Led device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06310762A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1189291A2 (en) * | 2000-09-13 | 2002-03-20 | Citizen Electronics Co., Ltd. | Chip type light emitting diode and method of manufacture thereof |
| KR100419611B1 (en) * | 2001-05-24 | 2004-02-25 | 삼성전기주식회사 | A Light Emitting Diode, a Lighting Emitting Device Using the Same and a Fabrication Process therefor |
| WO2022104680A1 (en) * | 2020-11-20 | 2022-05-27 | 苏州晶湛半导体有限公司 | Full-color led structure, and full-color led structure unit and method for manufacturing same |
-
1993
- 1993-04-21 JP JP9434093A patent/JPH06310762A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1189291A2 (en) * | 2000-09-13 | 2002-03-20 | Citizen Electronics Co., Ltd. | Chip type light emitting diode and method of manufacture thereof |
| EP1189291A3 (en) * | 2000-09-13 | 2006-03-22 | Citizen Electronics Co., Ltd. | Chip type light emitting diode and method of manufacture thereof |
| KR100419611B1 (en) * | 2001-05-24 | 2004-02-25 | 삼성전기주식회사 | A Light Emitting Diode, a Lighting Emitting Device Using the Same and a Fabrication Process therefor |
| WO2022104680A1 (en) * | 2020-11-20 | 2022-05-27 | 苏州晶湛半导体有限公司 | Full-color led structure, and full-color led structure unit and method for manufacturing same |
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