JPH06310190A - Wiring structure against abnormal voltage - Google Patents

Wiring structure against abnormal voltage

Info

Publication number
JPH06310190A
JPH06310190A JP11768093A JP11768093A JPH06310190A JP H06310190 A JPH06310190 A JP H06310190A JP 11768093 A JP11768093 A JP 11768093A JP 11768093 A JP11768093 A JP 11768093A JP H06310190 A JPH06310190 A JP H06310190A
Authority
JP
Japan
Prior art keywords
layer
conductor
abnormal voltage
coating layer
wiring structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11768093A
Other languages
Japanese (ja)
Other versions
JP3313816B2 (en
Inventor
Kunitaka Mizobe
都孝 溝部
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP11768093A priority Critical patent/JP3313816B2/en
Publication of JPH06310190A publication Critical patent/JPH06310190A/en
Application granted granted Critical
Publication of JP3313816B2 publication Critical patent/JP3313816B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To make the conformity of the whole of circuits excellent, and thereby prevent the equipment from being damaged by forming a conductor section making up the joint section of wiring paths into a specified shape, and concurrently laminating a specified sheath layer and a specified insulating layer on the conductor section. CONSTITUTION:The joint section of electric wiring paths 3a through 3c, is formed on a conductor 1 in a curved shape, thunder surge current which is induced from the other direction through a grounding wire path 3c perpendicularly against the grounding wiring paths 3a and 3b lined up in a linear line, forms each discharge passage forming an abuse angle to any direction. A sheath layer 4 composed of semi-conductors or oxides is provided for the conductor 1, and a sheath layer 5 composed of an insulator is laminated over the layer 4. This constitution thereby allows steep waves due to surge voltage to rush into the semi-conductor layer or the oxide layer while passing through an alloy layer or an ununiform electron arranging layer so as to be propagated while being made uniform, and the uniformity of the whole of circuits is excellent, so that the equipment is prevented from being damaged due to surge current.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電気回路中の機器や素
子等を異常電圧から保護することができる配線構造に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring structure capable of protecting equipment, elements and the like in an electric circuit from abnormal voltage.

【0002】[0002]

【従来の技術】従来、計測機器や制御機器、OA機器、
通信機器等を落雷等によって進入してくる異常電圧・電
流から保護するために、地中に埋設した接地電極から接
地母線を延設し、この接地母線に前記諸機器の接地側を
接続していた。また、ICやLSI等の集積回路および
プリント基板等においては、耐電圧レベルにより近い、
強い急峻波に対する保護手段としては回路形態および機
能構造形態における考慮および対策は設けられていなか
った。
2. Description of the Related Art Conventionally, measuring equipment, control equipment, office automation equipment,
In order to protect communication equipment, etc. from abnormal voltage and current entering due to lightning, etc., a ground bus bar is extended from the ground electrode buried in the ground, and the ground side of the above equipment is connected to this ground bus bar. It was In integrated circuits such as ICs and LSIs and printed circuit boards, the withstand voltage level is closer to
As a protection measure against a strong steep wave, consideration and countermeasures in the circuit form and the functional structure form were not provided.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、前記計
測機器や制御機器、OA機器、通信機器等の設置場所や
IC、LSI等の集積回路やプリント基板の配線に急峻
波が進入してきた場合、その著るしい急峻波を効率よく
伝搬させることができず、このため、機器あるいはパッ
ケージ内の整合性が得られず、またはその一部が同電位
とならずにその機器やIC、LSI等の集積回路やプリ
ント基板等の素子を破損してしまうという問題があっ
た。
However, when a steep wave enters the installation location of the measurement equipment, control equipment, OA equipment, communication equipment, or the integrated circuit such as IC or LSI or the wiring of the printed circuit board, It is not possible to propagate a remarkable steep wave efficiently, so that the consistency within the device or package cannot be obtained, or a part of the device does not have the same potential and the device, IC, LSI, etc. are integrated. There is a problem that elements such as circuits and printed circuit boards are damaged.

【0004】本発明は、かかる従来の問題点を解決する
ためになされたものであって、その目的とするところ
は、進入してきた雷サージ電圧・電流の伝搬ロスを少な
くし、かつサージ波形の急峻波を抑制することができる
異常電圧対策用配線構造を提供することにある。
The present invention has been made to solve the above-mentioned conventional problems, and its object is to reduce the propagation loss of the incoming lightning surge voltage / current and to reduce the surge waveform. An object of the present invention is to provide a wiring structure for suppressing abnormal voltage that can suppress steep waves.

【0005】[0005]

【課題を解決するための手段】前記目的を達成するため
の手段として本発明請求項1記載の異常電圧対策用配線
構造では、電気回路における配線路の直角方向屈曲部や
合流部に半導体または酸化物による被覆層を設け、さら
に前記半導体または酸化物による被覆層に絶縁体による
被覆層を設けた構成とした。
As a means for achieving the above object, in the wiring structure for preventing abnormal voltage according to claim 1 of the present invention, a semiconductor or an oxide is formed at a bent portion or a joining portion of a wiring path in an electric circuit at a right angle. A coating layer made of a material is provided, and a coating layer made of an insulator is further provided on the coating layer made of the semiconductor or oxide.

【0006】また、請求項2記載の異常電圧対策用配線
構造では、請求項1記載の異常電圧対策用配線構造にお
いて、前記配線路の直角方向屈曲部や合流部を湾曲状に
形成した構成とした。
According to a second aspect of the present invention, there is provided an abnormal voltage countermeasure wiring structure according to the first aspect, in which a bent portion or a merging portion of the wiring path at a right angle is formed in a curved shape. did.

【0007】また、請求項3記載の異常電圧対策用配線
構造では、請求項1記載の異常電圧対策用配線構造にお
いて、前記配線路を絶縁基板に形成し、かつ該配線路の
直角方向屈曲部や合流部を湾曲状に形成した構成とし
た。
According to a third aspect of the present invention, there is provided the abnormal voltage countermeasure wiring structure according to the first aspect, wherein the wiring path is formed on an insulating substrate and the wiring path is bent at a right angle. The merging portion is formed in a curved shape.

【0008】[0008]

【作用】本発明請求項1記載の異常電圧対策用配線構造
では、サージ電圧による急峻波は、配線路の導体と半導
体との間、または導体と酸化物との間に形成される合金
層、または不均等な電子の配位層を通過して半導体被覆
層または酸化物被覆層に突入した後、その急峻な部分が
ある程度平均化されて伝搬することにより、回路全体の
整合性をより改善して機器の破損を防止することができ
る。
In the wiring structure for preventing abnormal voltage according to claim 1 of the present invention, the steep wave due to the surge voltage causes an alloy layer formed between the conductor and the semiconductor of the wiring path or between the conductor and the oxide, Or, after entering the semiconductor coating layer or the oxide coating layer through the non-uniform electron coordination layer, the steep part is averaged and propagated to some extent to further improve the integrity of the entire circuit. It is possible to prevent equipment damage.

【0009】また、請求項2記載の異常電圧対策用配線
構造では、電サージ等による急峻波は、配線路の直角方
向屈曲部や合流部ではなめらかに方向を変えて伝搬す
る。このため、本来、急峻波が突入した直角部分ではイ
ンピーダンス特性が大きくなって配線路の抵抗値を高く
し機器の被害を発生させていたが、このインピーダンス
特性の変化による機器の被害を少くすることができる。
また、その屈曲部分では、急峻波の急峻な部分が合金
層、あるいは半導体または酸化物等の被覆層によってあ
る程度平均化されて伝搬することにより、著るしく急峻
なサージ電圧・電流による弊害を緩和し、回路全体の整
合性,同電位化をより改善することができる。
Further, in the wiring structure for preventing abnormal voltage according to the second aspect, a steep wave due to an electric surge or the like propagates by smoothly changing its direction at a bent portion or a confluent portion of the wiring path at a right angle. Therefore, originally, the impedance characteristic becomes large in the right-angled part where the steep wave enters, and the resistance value of the wiring path is increased to cause the damage to the equipment, but the damage to the equipment due to the change in the impedance characteristics should be reduced. You can
In addition, in the bent portion, the steep portion of the steep wave is averaged and propagated to some extent by the alloy layer or the coating layer of the semiconductor or the oxide, thereby mitigating the adverse effects of the remarkably steep surge voltage and current. However, it is possible to further improve the matching and equipotentialization of the entire circuit.

【0010】また、請求項3記載の異常電圧対策用配線
構造では、配線路にその耐電圧レベルにより近い、強い
急峻波が進入した場合、その急峻波は配線路の合金層、
あるいは半導体または酸化物等の被覆層に突入した後、
その急峻な部分が遅延化または低下し、同部を持続性異
常電圧やパルス波が伝搬する上で、回路全体の整合性を
より改善して機器の破損を防止することができる。
Further, in the abnormal voltage countermeasure wiring structure according to the present invention, when a strong steep wave that is closer to the withstand voltage level enters the wiring path, the steep wave is an alloy layer of the wiring path.
Or after rushing into the coating layer of semiconductor or oxide,
The steep portion is delayed or lowered, and when the abnormal abnormal voltage or the pulse wave propagates through the portion, the integrity of the entire circuit can be further improved and the damage to the device can be prevented.

【0011】[0011]

【実施例】以下、本発明の第1実施例を図面に基づいて
詳細に説明する。図1は本実施例の異常電圧対策用配線
具を示す平面図、図2は図1におけるA−B−A線によ
る断面図であり、図中1は配線路の合流部を形成する導
体部、2a〜2cはその接続部、3a〜3cは配線路で
ある接地電線、4は半導体被覆層、5は絶縁体被覆層で
ある。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A first embodiment of the present invention will be described in detail below with reference to the drawings. 1 is a plan view showing an abnormal voltage countermeasure wiring tool of the present embodiment, and FIG. 2 is a cross-sectional view taken along the line A-B-A in FIG. 1. In FIG. 1, reference numeral 1 is a conductor portion forming a junction of wiring paths. Reference numerals 2a to 2c are connection portions thereof, 3a to 3c are ground wires which are wiring paths, 4 is a semiconductor coating layer, and 5 is an insulator coating layer.

【0012】前記導体部1は、雷サージ電流の放電通路
を形成するためのものであって、本実施例では、一直線
上に配置され接地母線となる接地電線3a,3bに対し
他方から直角に引き込まれる接地電線3cからの雷サー
ジ電流がいずれの方向に対しても鈍角の放電通路を形成
させるように略三角形状に形成されている。そして、図
1において、Lは接地電線3cから接地電線3aおよび
3b方向へ設けられた放電通路であって、そのそれぞれ
の両縁La,Lbは、接地電線3cの導体部1内方向へ
の延長線と接地電線3aおよび3bの中心線とに略接す
る大きな円と同心円状(湾曲状)に形成されている。
尚、放電通路Lの断面形状は、電気的な抵抗値の低い導
電性材料により略円柱状に形成されている。
The conductor portion 1 is for forming a discharge passage of a lightning surge current, and in this embodiment, it is perpendicular to the grounding wires 3a and 3b which are arranged in a straight line and serve as grounding busbars. It is formed in a substantially triangular shape so that the lightning surge current drawn from the grounded electric wire 3c forms an obtuse-angled discharge path in any direction. In FIG. 1, L is a discharge path provided from the ground wire 3c in the direction of the ground wires 3a and 3b, and both edges La and Lb of the discharge path extend inward of the conductor part 1 of the ground wire 3c. It is formed in a concentric shape (curved shape) with a large circle that is substantially in contact with the wire and the center lines of the ground wires 3a and 3b.
The cross-sectional shape of the discharge passage L is formed of a conductive material having a low electric resistance value into a substantially columnar shape.

【0013】前記接続部2a,2b,2cは、接地電線
3a,3b,3cを導体部1に固定状態で接続するため
のものであって、各接続部とも挿入孔20を有し筒状に
形成されると共に、該挿入孔20を軸心方向に開口する
スリット21がその両側面であって挿入孔20の略全長
に亘って設けられている。このスリット幅は、挿入孔2
0に所定の接地電線を挿入して締付けた状態にしても適
宜隙間が生じるように形成されている。また、このスリ
ット21を挟んでその上下に締付座が平行に突設され、
この締付座には、それぞれボルト締め用の貫通孔22が
穿設されている。
The connecting portions 2a, 2b and 2c are for connecting the ground wires 3a, 3b and 3c to the conductor portion 1 in a fixed state, and each connecting portion has an insertion hole 20 and has a cylindrical shape. The slits 21 that are formed and that open the insertion hole 20 in the axial direction are provided on both sides of the insertion hole 20 over substantially the entire length of the insertion hole 20. This slit width is the insertion hole 2
Even if a predetermined ground wire is inserted into 0 and tightened, a gap is appropriately formed. In addition, clamping seats are provided in parallel above and below the slit 21 in parallel,
Through holes 22 for bolting are formed in the tightening seats.

【0014】前記半導体被覆層4は、一時的な充電体と
なるものであって、例えばシリコン、酸化亜鉛、亜酸化
銅等を前記接続部2a,2b,2cを除いた導体部1の
外表面に被覆して形成されている。尚、本実施例では導
体部1を中空状に形成し、その内部にも半導体を被覆し
ている。この場合、内部の被覆部は中空状としてもよ
い。
The semiconductor coating layer 4 serves as a temporary charging body, and is made of, for example, silicon, zinc oxide, cuprous oxide or the like, and the outer surface of the conductor portion 1 excluding the connection portions 2a, 2b and 2c. It is formed by coating. In this embodiment, the conductor portion 1 is formed in a hollow shape, and the inside thereof is also covered with the semiconductor. In this case, the inner coating may be hollow.

【0015】前記絶縁体被覆層5は、セラミック、合成
樹脂等による絶縁体を前記半導体被覆層4の全体に被覆
したものである。
The insulator coating layer 5 is obtained by coating the entire semiconductor coating layer 4 with an insulator made of ceramic, synthetic resin or the like.

【0016】次に作用を説明する。前記異常電圧対策用
配線具は、計測機器等の接地用として屋内に引込んだ接
地電線の合流部に使用される。即ち、連続した接地電線
3a,3bの途中に、それに直角方向から合流する接地
電線3cを一体に接続するものである。この場合、各接
地電線は挿入孔20に挿入した後、貫通穴22にボルト
を挿通して締付けることにより固定またはロウ付けによ
り固定する。この異常電圧対策用配線具に、例えば接地
電線3a側が屋外地中に接地され接地電線3c側から雷
サージ等が進入した場合、まず、サージ電流は導体部1
の縁Laに沿ってなめらかに方向を変えて接地電線3a
側に伝搬する。このため、方向変換部分で放電が発生す
ることも少ないから伝搬ロスも少なく、また、反射波等
によるインピーダンス特性の増大も少ない。
Next, the operation will be described. The abnormal voltage countermeasure wiring tool is used at a confluence portion of a grounding wire that is drawn indoors for grounding a measuring device or the like. That is, in the middle of the continuous ground electric wires 3a and 3b, the ground electric wires 3c, which join from the direction perpendicular to the ground electric wires, are integrally connected. In this case, each ground wire is inserted into the insertion hole 20 and then fixed by inserting a bolt into the through hole 22 and tightening or fixing by brazing. When the ground wire 3a side is grounded to the ground outdoors and a lightning surge or the like enters from the ground wire 3c side to this abnormal voltage countermeasure wiring tool, first, the surge current is generated by the conductor portion 1.
Change the direction smoothly along the edge La of the ground wire 3a
Propagate to the side. Therefore, since the discharge is less likely to occur in the direction changing portion, the propagation loss is less, and the impedance characteristic due to the reflected wave or the like is less likely to increase.

【0017】そして、前記雷サージ等は、急峻波の急峻
な部分が半導体被覆層4、または、導体部1とこの半導
体被覆層との間に形成される不均等な電子の配位層によ
って遅延化または低下する。このように、回路全体の整
合性がより改善されることで伝搬ロスも少なく伝搬する
ことになる。
The lightning surge or the like is delayed by the semiconductor coating layer 4 or the uneven electron coordination layer formed between the conductor portion 1 and the semiconductor coating layer at the steep portion of the steep wave. Change or decrease. In this way, since the matching of the entire circuit is further improved, the propagation loss is small.

【0018】以上、説明してきたように本実施例の異常
電圧対策用配線具にあっては、計測機器設置側に雷サー
ジ等が進入しても、配線路の方向変換部分で放電が少な
いから伝搬ロスも少なく、また、反射波等によるインピ
ーダンス特性の増大も少ないことで、計測機器設置側を
全て同電位とすることができるから、雷サージによる機
器の破損を防止することができる。また、雷サージによ
る急峻波は遅延化し或は低下して平均化されて伝搬し、
機器設置側の整合性をより改善することができる。
As described above, in the abnormal voltage countermeasure wiring tool of this embodiment, even if a lightning surge or the like enters the measuring equipment installation side, there is little discharge at the direction changing portion of the wiring path. Since the propagation loss is small and the increase in impedance characteristics due to reflected waves and the like is small, it is possible to keep all the measuring equipment installation sides at the same potential, and thus to prevent damage to the equipment due to lightning surge. In addition, steep waves due to lightning surges are delayed or reduced and averaged to propagate,
It is possible to further improve the consistency on the equipment installation side.

【0019】次に、第2実施例を図3に基づいて説明す
る。本実施例はICパッケージ内の配線路に関するもの
であって、図中6は導体部、7はその導体部6を固着し
た絶縁性基板である。前記導体部6は、ICの配線路で
あって、L字状の方向変換部分に湾曲部60を形成した
ものである。そして、この湾曲部60に、シリコン、酸
化亜鉛、亜酸化銅等による被覆層4を形成し、その上に
絶縁体被覆層5を形成したものである。
Next, a second embodiment will be described with reference to FIG. The present embodiment relates to a wiring path in an IC package, in which 6 is a conductor portion and 7 is an insulating substrate to which the conductor portion 6 is fixed. The conductor portion 6 is a wiring path of an IC and has a curved portion 60 formed in an L-shaped direction changing portion. Then, a coating layer 4 made of silicon, zinc oxide, cuprous oxide or the like is formed on the curved portion 60, and an insulating coating layer 5 is formed thereon.

【0020】この配線構造では、その導体部6にその耐
圧レベルにより近い、強い急峻波が進入した場合、その
急峻波は、半導体または酸化物被覆層4に突入した後、
その急峻な部分が遅延化または低下し、回路内の整合性
をより改善することができるから、素子等の破損をより
防止することができる。
In this wiring structure, when a strong steep wave that is closer to the withstand voltage level enters the conductor portion 6, after the steep wave rushes into the semiconductor or oxide coating layer 4,
The steep portion is delayed or lowered, and the matching in the circuit can be further improved, so that the damage of the element or the like can be further prevented.

【0021】以上、本発明の実施例を説明してきたが、
本発明の具体的な構成はこの実施例に限定されるもので
はなく、発明の要旨を逸脱しない範囲の設計変更等があ
っても本発明に含まれる。
The embodiments of the present invention have been described above.
The specific configuration of the present invention is not limited to this embodiment, and the present invention includes a design change and the like within a range not departing from the gist of the invention.

【0022】例えば、実施例では、導体部1は三方向に
接地電線を接続するもので説明したが、これに限らず、
略L字状に形成して二方向に接続するものでもよく、接
続部の数は任意に設定することができる(図4〜図9参
照)。また、被覆層の導体部における形成範囲やその形
状等も任意に設定することができる。
For example, in the embodiment, the conductor portion 1 has been described as one in which the ground wires are connected in three directions, but the invention is not limited to this.
It may be formed in a substantially L shape and connected in two directions, and the number of connecting portions can be set arbitrarily (see FIGS. 4 to 9). Further, the formation range of the conductor portion of the coating layer, its shape, and the like can be arbitrarily set.

【0023】また、半導体被覆層を形成する半導体は、
抵抗性のものでも使用することができる。また、半導体
被覆層の代わりに、厚さ方向に電子の不均等な配位層を
形成するための酸化物層を設けてもよい。
The semiconductor forming the semiconductor coating layer is
Resistive ones can also be used. Further, instead of the semiconductor coating layer, an oxide layer for forming a non-uniform electron coordination layer in the thickness direction may be provided.

【0024】絶縁性基板に設ける配線路は、絶縁性基板
に導体をプリントして形成したものでもよい。また、パ
ッケージ内のアース回路は、角部に限らず全長に亘って
半導体被覆層と絶縁体被覆層を設けてもよい。
The wiring path provided on the insulating substrate may be formed by printing a conductor on the insulating substrate. Further, the earth circuit in the package may be provided with the semiconductor coating layer and the insulator coating layer not only at the corners but over the entire length.

【0025】[0025]

【発明の効果】以上、説明してきたように本発明請求項
1記載の異常電圧対策用配線構造にあっては、前記構成
としたため、サージ電圧等による急峻波は、配線路の半
導体被覆層または電子の不均等な配位層に突入した後、
その急峻な部分が平均化されて伝搬することにより、回
路全体をより改善して機器の破損を防止することができ
るという効果が得られる。
As described above, in the abnormal voltage countermeasure wiring structure according to the first aspect of the present invention, since it has the above-mentioned structure, a steep wave due to a surge voltage or the like causes a steep wave due to a surge voltage or the like in the semiconductor coating layer of the wiring path or After plunging into the uneven coordination layer of electrons,
Since the steep portion is averaged and propagated, it is possible to improve the entire circuit and prevent damage to the device.

【0026】また、請求項2記載の異常電圧対策用配線
構造にあっては、前記構成としたため、機器設置側に雷
サージ等が進入しても、配線路の方向変換部分で放電す
ることが少ないから伝搬ロスも少なく、また、反射波等
によるインピーダンス特性の増大もないことで、機器設
置側との整合性を高めることができるから、電サージ等
による機器の破損を防止することができる。また、雷サ
ージ等による急峻波は、遅延化または低下し平均化され
て伝搬し機器設置側の整合性をより改善することができ
る等の効果が得られる。
Further, in the wiring structure for preventing abnormal voltage according to the second aspect of the invention, because of the above-mentioned configuration, even if a lightning surge or the like enters the equipment installation side, discharge can occur at the direction changing portion of the wiring path. Since it is small, the propagation loss is small, and the impedance characteristics due to reflected waves and the like are not increased, so that the compatibility with the equipment installation side can be enhanced, and thus the equipment can be prevented from being damaged due to electric surge or the like. In addition, steep waves due to a lightning surge or the like are delayed or reduced, propagated after being averaged, and the effect that the consistency on the equipment installation side can be further improved can be obtained.

【0027】また、請求項3記載の異常電圧対策用配線
構造にあっては、前記構成としたため、プリント基板で
形成した回路やIC、LSI等の集積回路またはプリン
ト基板においての耐圧レベルにより近い、強い急峻波が
進入した場合、その急峻波は、半導体被覆層または電子
の不均等な配位層によって急峻な部分が遅延化または低
下し伝搬する結果では、平均化されて伝搬することによ
り回路内の整合性をより改善することができるから、回
路の破損を防止することができるという効果が得られ
る。
Further, in the wiring structure for preventing abnormal voltage according to the third aspect of the present invention, since it has the above structure, it is closer to the withstand voltage level of the circuit formed on the printed board, the integrated circuit such as IC, LSI, or the printed board. When a strong steep wave enters, the steep wave is delayed in the steep part due to the semiconductor coating layer or the non-uniform electron coordination layer and propagates as a result of propagation. Since it is possible to further improve the consistency of the circuit, it is possible to prevent the circuit from being damaged.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明第1実施例の異常電圧対策用配線構造を
示す平面図である。
FIG. 1 is a plan view showing an abnormal voltage countermeasure wiring structure according to a first embodiment of the present invention.

【図2】第1実施例の図1におけるA−B−A線による
断面図である。
FIG. 2 is a sectional view taken along the line A-B-A in FIG. 1 of the first embodiment.

【図3】第2実施例のIC回路の一部を示す説明図であ
る。
FIG. 3 is an explanatory diagram showing a part of an IC circuit according to a second embodiment.

【図4】その他の実施例の略L字状の配線構造を示す平
面図である。
FIG. 4 is a plan view showing a substantially L-shaped wiring structure of another embodiment.

【図5】その他の実施例の略て字状の配線構造を示す平
面図である。
FIG. 5 is a plan view showing a generally V-shaped wiring structure according to another embodiment.

【図6】その他の実施例の略r字状の配線構造を示す平
面図である。
FIG. 6 is a plan view showing a substantially r-shaped wiring structure of another embodiment.

【図7】その他の実施例の略菱形状の配線構造を示す平
面図である。
FIG. 7 is a plan view showing a substantially rhombic wiring structure according to another embodiment.

【図8】その他の実施例の略菱形状に一方向放電通路を
加えた配線構造を示す平面図である。
FIG. 8 is a plan view showing a wiring structure in which a one-way discharge path is added to the substantially rhombic shape of another embodiment.

【図9】その他の実施例の略菱形状に十字状放電通路を
加えた配線構造を示す平面図である。
FIG. 9 is a plan view showing a wiring structure in which a cross-shaped discharge passage is added to the substantially rhombic shape of another embodiment.

【符号の説明】[Explanation of symbols]

1,6 配線路の合流部を形成する導体部 3a,3b,3c 配線路である接地電線 4 半導体被覆層 5 絶縁体被覆層 60 湾曲部 L 湾曲状の放電通路 1, 6 conductors forming a confluence part of wiring path 3a, 3b, 3c ground wire which is a wiring path 4 semiconductor coating layer 5 insulator coating layer 60 curved portion L curved discharge passage

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 電気回路における配線路の直角方向屈曲
部や合流部に半導体または酸化物による被覆層を設け、
さらに前記半導体または酸化物による被覆層に絶縁体に
よる被覆層を設けたことを特徴とする異常電圧対策用配
線構造。
1. A coating layer made of a semiconductor or an oxide is provided at a bent portion or a joining portion of a wiring path in an electric circuit at a right angle,
Furthermore, a wiring structure for preventing abnormal voltage, characterized in that a coating layer made of an insulator is provided on the coating layer made of the semiconductor or oxide.
【請求項2】 請求項1記載の異常電圧対策用配線構造
において、前記配線路の直角方向屈曲部や合流部を湾曲
状に形成したことを特徴とする異常電圧対策用配線構
造。
2. The abnormal voltage countermeasure wiring structure according to claim 1, wherein a bent portion or a joining portion of the wiring path at a right angle is formed in a curved shape.
【請求項3】 請求項1記載の異常電圧対策用配線構造
において、前記配線路を絶縁基板に形成し、かつ該配線
路の直角方向屈曲部や合流部を湾曲状に形成したことを
特徴とする異常電圧対策用配線構造。
3. The wiring structure for preventing abnormal voltage according to claim 1, wherein the wiring path is formed on an insulating substrate, and a bent portion or a merging portion of the wiring path in a right angle direction is formed in a curved shape. Wiring structure to prevent abnormal voltage.
JP11768093A 1993-04-20 1993-04-20 Wiring structure for abnormal voltage countermeasures Expired - Fee Related JP3313816B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11768093A JP3313816B2 (en) 1993-04-20 1993-04-20 Wiring structure for abnormal voltage countermeasures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11768093A JP3313816B2 (en) 1993-04-20 1993-04-20 Wiring structure for abnormal voltage countermeasures

Publications (2)

Publication Number Publication Date
JPH06310190A true JPH06310190A (en) 1994-11-04
JP3313816B2 JP3313816B2 (en) 2002-08-12

Family

ID=14717632

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11768093A Expired - Fee Related JP3313816B2 (en) 1993-04-20 1993-04-20 Wiring structure for abnormal voltage countermeasures

Country Status (1)

Country Link
JP (1) JP3313816B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100866027B1 (en) * 2007-09-27 2008-10-30 주식회사 루벤스 Pipe-shapped cross type sleeve of a mesh type grounding electrode for joining bare copper wires

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100866027B1 (en) * 2007-09-27 2008-10-30 주식회사 루벤스 Pipe-shapped cross type sleeve of a mesh type grounding electrode for joining bare copper wires

Also Published As

Publication number Publication date
JP3313816B2 (en) 2002-08-12

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