JPH06305732A - Wc type tantalum nitride and method for synthesizing the same - Google Patents
Wc type tantalum nitride and method for synthesizing the sameInfo
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- JPH06305732A JPH06305732A JP12342593A JP12342593A JPH06305732A JP H06305732 A JPH06305732 A JP H06305732A JP 12342593 A JP12342593 A JP 12342593A JP 12342593 A JP12342593 A JP 12342593A JP H06305732 A JPH06305732 A JP H06305732A
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- tantalum nitride
- type
- type tantalum
- nitride
- cosn
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、ＷＣ型窒化タンタルお
よびその合成方法、並びにＷＣ型窒化タンタルを含有し
てなる焼結体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a WC type tantalum nitride, a method for synthesizing the same, and a sintered body containing the WC type tantalum nitride.
【０００２】[0002]
【従来の技術】基本的に１：１モル比の窒化タンタル
は、結晶構造から大別すると、立方晶系窒化タンタルと
六方晶系窒化タンタルがある。この内、六方晶系窒化タ
ンタルは、常温常圧相のＣｏＳｎ型窒化タンタルと高温
高圧相のＷＣ型窒化タンタルが確認されている。2. Description of the Related Art Basically, tantalum nitride having a 1: 1 molar ratio is roughly classified into cubic tantalum nitride and hexagonal tantalum nitride according to the crystal structure. Among them, as the hexagonal tantalum nitride, CoSn type tantalum nitride in a room temperature and normal pressure phase and WC type tantalum nitride in a high temperature and high pressure phase have been confirmed.
【０００３】ＷＣ型窒化タンタルは、ＣｏＳｎ型窒化タ
ンタルに比べて高密度、高硬度で高温安定性がすぐれる
けれども、合成が困難であるという問題がある。WC type tantalum nitride has a high density, high hardness and high temperature stability as compared with CoSn type tantalum nitride, but has a problem that it is difficult to synthesize.
【０００４】このＷＣ型窒化タンタルは、ほとんど検討
されてなく、ＢｏｉｋｏらがＩｎｓｔｉｔｕｔｅ ｏｆ
Ｈｉｇｈ Ｐｒｅｓｓｕｒｅ Ｐｈｙｓｉｃｓ，Ｕｓ
ｓｒＡｃａｄｅｍｙ ｏｆ Ｓｃｉｅｎｃｅｓ Ｓｕｂ
ｍｉｔｔｅｄ（１７ Ｊｕｎｅ １９７０）で提案して
いるにすぎない。This WC-type tantalum nitride has hardly been studied, and Boiko et al.
High Pressure Physics, Us
srAcademy of Sciences Sub
It is only proposed by Mitted (17 June 1970).
【０００５】[0005]
【発明が解決しようとする課題】Ｂｏｉｋｏらの提案し
ているＷＣ型窒化タンタルは、ＣｏＳｎ型窒化タンタル
の出発物質とグラファイトやタンタルの容器とヒーター
を用いて、３ＧＰａ以上の圧力で合成して得たもので、
タンタル１モルに対し窒素が０．８〜０．９モルである
という化学量論性から大きくずれた組成になっており、
硬さが低く、高温安定性に欠けるという問題がある。ま
た、ＢｏｉｋｏらによるＷＣ型窒化タンタルの合成方法
では、高圧力が必要で、かつＷＣ型窒化タンタルの収率
が低いという問題がある。The WC type tantalum nitride proposed by Boiko et al. Is obtained by synthesizing a starting material of CoSn type tantalum nitride, a container of graphite or tantalum and a heater at a pressure of 3 GPa or more. It was
The composition is largely deviated from the stoichiometry in which nitrogen is 0.8 to 0.9 mol with respect to 1 mol of tantalum.
There is a problem of low hardness and lack of high temperature stability. Further, the method of synthesizing WC type tantalum nitride by Boiko et al. Has a problem that high pressure is required and the yield of WC type tantalum nitride is low.
【０００６】本発明は、上述のような問題点を解決した
もので、具体的には、組成が化学量論性またはその近辺
にあり、高硬度なＷＣ型窒化タンタルおよびその合成方
法、並びにそのＷＣ型窒化タンタルを含有した焼結体の
提供を目的とするものである。The present invention has solved the above-mentioned problems. Specifically, the composition is near stoichiometric or near it, and has a high hardness, WC-type tantalum nitride, its synthesis method, and its composition. It is intended to provide a sintered body containing WC type tantalum nitride.
【０００７】[0007]
【課題を解決するための手段】本発明者らは、ＷＣ型窒
化タンタルについて検討していた所、合成時に用いる容
器の材質と装置の種類によって、得られるＷＣ型窒化タ
ンタルの収率が異なること、またそのＷＣ型窒化タンタ
ル中の窒素含有量が異なること、具体的には、化学量論
組成の窒化タンタルは、ＢＮやＭｇＯなどのセラミック
製の容器を用いて、ピストンシリンダー型超高圧装置に
より合成することができるという知見を得たものであ
る。この知見に基づいて本発明を完成するに至ったもの
である。Means for Solving the Problems The inventors of the present invention have studied WC-type tantalum nitride and found that the yield of WC-type tantalum nitride obtained varies depending on the material of the container used during synthesis and the type of equipment. Moreover, the nitrogen content in the WC-type tantalum nitride is different. Specifically, tantalum nitride having a stoichiometric composition is produced by a piston-cylinder type ultra-high pressure device using a ceramic container such as BN or MgO. It has been found that it can be synthesized. The present invention has been completed based on this finding.
【０００８】すなわち、本発明のＷＣ型窒化タンタル
は、タンタル１モルに対し、窒素が０．９５〜１．１２
モル含有した、いわゆるＴａＮ0.95〜1.12でなるＷＣ型
窒化タンタルである。このＷＣ型窒化タンタルは、Ｘ線
回折における回折線が六方晶炭化タングステンであるＷ
ＣのＸ線回折線とほぼ同様のピーク線（実際には、各ピ
ーク線が少しズレている。）からなるものであり、特に
ＴａＮ0.99〜1.08でなるＷＣ型窒化タンタルが高硬度，
高密度であることから好ましい。That is, the WC-type tantalum nitride of the present invention contains 0.95 to 1.12 of nitrogen per mol of tantalum.
It is a WC type tantalum nitride containing so-called TaN 0.95 to 1.12 . This WC-type tantalum nitride has a diffraction line in X-ray diffraction of hexagonal tungsten carbide W
It is composed of almost the same peak lines as the X-ray diffraction line of C (actually, the peak lines are slightly deviated), and in particular, WC-type tantalum nitride having TaN 0.99 to 1.08 has a high hardness,
High density is preferable.
【０００９】このＴａＮ0.95〜1.12のＷＣ型窒化タンタ
ルを合成するには、超高圧装置を用いて、装置内のカプ
セルに出発物質であるＣｏＳｎ型窒化タンタルを含有し
てなる粉体または成形体を装入し、１〜３ＧＰａの圧
力、１０００〜１８００℃の静的超高圧をかけて、該粉
体または該成形体の中のＣｏＳｎ型窒化タンタルをＷＣ
型窒化タンタルに変換させる。In order to synthesize the WC type tantalum nitride of TaN 0.95 to 1.12 , an ultrahigh pressure apparatus is used to form a powder or a compact containing CoSn type tantalum nitride as a starting material in a capsule inside the apparatus. Charge, apply a pressure of 1 to 3 GPa, and apply a static ultrahigh pressure of 1000 to 1800 ° C. to WC the CoSn type tantalum nitride in the powder or the molded body.
Convert to type tantalum nitride.
【００１０】このときに用いる超高圧装置は、ベルト型
超高圧装置とピストンシリンダー型超高圧装置がある
が、特にピストンシリンダー型超高圧装置が好ましい。The ultrahigh pressure apparatus used at this time includes a belt type ultrahigh pressure apparatus and a piston cylinder type ultrahigh pressure apparatus, and a piston cylinder type ultrahigh pressure apparatus is particularly preferable.
【００１１】また、カプセルは、周期律表の４ａ，５
ａ，６ａ，７ａ，８族の金属やセラミックスが用いられ
るが、出発物質であるＣｏＳｎ型窒化タンタルとカプセ
ルとの反応防止、およびＷＣ型窒化タンタルへの変換時
における脱窒防止から、セラミックスが好ましく、セラ
ミックスとしては、例えばＭｇＯ，ｈＢＮ，Ａｌ2Ｏ3，
ＺｒＯ2，ＳｉＣ，Ｓｉ3Ｎ4，ＡｌＮを挙げることがで
きる。これらの内、特にＭｇＯ系セラミックス，Ａｌ2
Ｏ3系セラミックス，ＺｒＯ2系セラミックスまたはＢＮ
系セラミックスでなるカプセルが好ましい。The capsule is composed of 4a and 5 of the periodic table.
Although metals and ceramics of a, 6a, 7a, and 8 are used, ceramics are preferable from the viewpoint of preventing reaction between the starting CoSn-type tantalum nitride and the capsule and denitrification during conversion to WC-type tantalum nitride. As the ceramics, for example, MgO, hBN, Al 2 O 3 ,
Mention may be made of ZrO 2, SiC, Si 3 N 4, AlN. Among these, especially MgO ceramics and Al 2
O 3 system ceramics, ZrO 2 system ceramics or BN
Capsules made of ceramics are preferred.
【００１２】この合成時に用いる粉体または成形体は、
化学量論組成または過化学量論組成のＣｏＳｎ窒化タン
タルのみからなる場合、もしくはＣｏＳｎ型窒化タンタ
ルと、他にＷＣ型窒化タンタルへの変換のための触媒作
用を持つ他物質、例えば周期律表の６ａ，７ａ，８属の
金属、特にＣｏ，Ｎｉ，Ｐｔ，Ｐｄ，Ｃｒの中の少なく
とも１種を含有したものが好ましい。The powder or compact used in this synthesis is
When it consists only of stoichiometric or superstoichiometric CoSn tantalum nitride, or CoSn-type tantalum nitride and other substances having a catalytic action for conversion to WC-type tantalum nitride, such as those of the periodic table A metal containing at least one of 6a, 7a, and 8 group metals, particularly Co, Ni, Pt, Pd, and Cr is preferable.
【００１３】以上の他に、もう１つの特徴である本発明
の焼結体は、ＴａＮ0.95〜1.12のＷＣ型窒化タンタルを
１０容量％以上と、残りセラミックスおよび／または金
属とからなるＷＣ型窒化タンタルを含む焼結体、具体的
には、例えばサーメット，超硬合金または各種のセラミ
ックス焼結体からなる。In addition to the above, another feature of the sintered body of the present invention is that the WC-type nitride composed of 10% by volume or more of TaN 0.95 to 1.12 WC-type tantalum nitride and the remaining ceramics and / or metal. It is made of a sintered body containing tantalum, specifically, for example, a cermet, a cemented carbide, or various ceramics sintered bodies.
【００１４】この本発明の焼結体におけるＷＣ型窒化タ
ンタルが１０容量％未満になると、ＴａＮ0.95〜1.12の
ＷＣ型窒化タンタルの効果が弱く、硬度および耐摩耗性
の向上が微弱になる。If the WC-type tantalum nitride in the sintered body of the present invention is less than 10% by volume, the effect of the WC-type tantalum nitride of TaN 0.95 to 1.12 is weak and the improvement in hardness and wear resistance becomes weak.
【００１５】この本発明の焼結体におけるセラミックス
および／または金属は、例えば周期律表の４ａ，５ａ，
６ａ族金属の炭化物，窒化物，炭酸化物，窒酸化物，ホ
ウ化物およびこれらの相互固溶体、酸化アルミニウム，
窒化アルミニウム，炭化ケイ素，窒化ケイ素，酸化ジル
コニウム，酸化マグネシウム，六方晶窒化ホウ素，立方
晶窒化ホウ素，ダイヤモンド，ならびに周期律表の４
ａ，５ａ，６ａ族の金属，Ｆｅ族金属を挙げることがで
きる。The ceramics and / or metals in the sintered body of the present invention are, for example, 4a, 5a,
Carbides, nitrides, carbonates, oxynitrides, borides of group 6a metals and their mutual solid solutions, aluminum oxide,
Aluminum nitride, silicon carbide, silicon nitride, zirconium oxide, magnesium oxide, hexagonal boron nitride, cubic boron nitride, diamond, and 4 of the Periodic Table
Examples of the metal include a, 5a, 6a group metals and Fe group metals.
【００１６】この焼結体は、ＴａＮ0.95〜1.12のＷＣ型
窒化タンタルがＣｏＳｎ型窒化タンタルへ逆変換しない
条件ならば、従来の粉末冶金法による製法を応用して得
ることができる。具体的には、例えば数ＧＰａの圧力，
１０００〜１８００℃の温度で静的超高圧で焼結するこ
とができる。また、上述のＷＣ型窒化タンタルの合成の
場合に、触媒作用を持つ物質が焼結体として有効に作用
するか、またはその物質が用途的に問題がないときは、
目的の組成成分中にＣｏＳｎ型窒化タンタルを含有させ
た粉体もしくは圧粉体を上述のＷＣ型窒化タンタルの合
成方法でもって、合成と焼結を同時に行い、ＣｏＳｎ型
窒化タンタルからＷＣ型窒化タンタルへの直接変換によ
る焼結体として作製することもできる。This sintered body can be obtained by applying the conventional method of powder metallurgy if the WC type tantalum nitride of TaN 0.95 to 1.12 is not converted back to the CoSn type tantalum nitride. Specifically, for example, a pressure of several GPa,
It can be sintered at a static ultra high pressure at a temperature of 1000-1800 ° C. Further, in the case of synthesizing the above-mentioned WC-type tantalum nitride, when the substance having a catalytic action effectively acts as a sintered body or the substance has no problem in use,
A powder or a green compact containing CoSn-type tantalum nitride in the target composition component is synthesized and sintered at the same time by the above-described WC-type tantalum nitride synthesizing method to convert CoSn-type tantalum nitride to WC-type tantalum nitride. It can also be produced as a sintered body by direct conversion into.
【００１７】[0017]
【作用】本発明のＷＣ型窒化タンタルの合成方法は、試
料を封入して静的圧縮方法によって１０００〜１８００
℃の温度範囲で１〜３ＧＰａの低い圧力で処理すること
により、ピストンシリンダー型超高圧装置でも短時間で
大量に合成、焼結を可能にしたものである。また、焼結
体におけるＴａＮ0.95〜1.12のＷＣ型窒化タンタルが焼
結体の硬度を高め、高温時に被加工材料との反応を阻止
する作用、例えば焼結体を切削工具として用いる場合に
被削材、特に鉄系材料との溶着を防止する作用をする。According to the method of synthesizing the WC type tantalum nitride of the present invention, the sample is enclosed and the static compression method is used to measure 1000 to 1800.
By treating at a low temperature of 1 to 3 GPa in the temperature range of ° C, a large amount of synthesis and sintering can be performed in a short time even with a piston-cylinder type ultrahigh pressure apparatus. In addition, the WC-type tantalum nitride of TaN 0.95 to 1.12 in the sintered body increases the hardness of the sintered body and prevents the reaction with the work material at a high temperature, for example, when the sintered body is used as a cutting tool It acts to prevent welding of the material, especially iron-based materials.
【００１８】[0018]
【実施例１】平均粒径０．２〜５μｍのＣｏＳｎ型窒化
タンタル（窒素量６．６１，炭素量０．３４，ＴａＮ
0.98）の粉末を３．５ｍｍ径、深さ４〜６ｍｍのＢＮ製
またはＭｇＯ製カプセルに入れ、図１のようなピストン
シリンダー型アセンブリーを構成し、ピストンシリンダ
ー型超高圧装置にセットした。圧力が１．５〜３ＧＰ
ａ、温度が１０３０〜１６５０℃で１０〜３０分間の実
験条件でクエンチ回収実験を６回行って、表１に示した
本発明のＷＣ型窒化タンタル１〜６を得た。（本発明品
１，２，５，６は、ＢＮ製カプセル中にＣｏＳｎ型窒化
タンタルを挿入、本発明品３，４は、ＭｇＯ製カプセル
中にＣｏＳｎ型窒化タンタルを挿入して得た。）こうし
て得た本発明品１〜６について、Ｘ線回折、化学分析、
硬度の計測を行った。このときの主な条件、結果を表１
に示した。Example 1 CoSn type tantalum nitride having an average particle size of 0.2 to 5 μm (nitrogen amount 6.61, carbon amount 0.34, TaN).
0.98 ) powder was put into a BN or MgO capsule having a diameter of 3.5 mm and a depth of 4 to 6 mm to form a piston-cylinder type assembly as shown in FIG. 1 and set in a piston-cylinder type ultra-high pressure device. Pressure is 1.5-3GP
a, a quench recovery experiment was conducted 6 times under the experimental conditions of a temperature of 1030 to 1650 ° C. for 10 to 30 minutes to obtain WC type tantalum nitrides 1 to 6 of the present invention shown in Table 1. (Products 1, 2, 5 and 6 of the present invention were obtained by inserting CoSn type tantalum nitride into a BN capsule, and products 3 and 4 of the present invention were obtained by inserting CoSn type tantalum nitride into a MgO capsule.) Regarding the products 1 to 6 of the present invention thus obtained, X-ray diffraction, chemical analysis,
The hardness was measured. The main conditions and results at this time are shown in Table 1.
It was shown to.
【００１９】Ｘ線回折は、ＣｕＫα線で回折し、、その
代表例として、本発明品３を図２のｂに、ＣｏＳｎ型窒
化タンタルを図２のａに示した。The X-ray diffraction was performed by diffusing CuKα rays. As typical examples thereof, the product 3 of the present invention is shown in FIG. 2b, and the CoSn type tantalum nitride is shown in FIG. 2a.
【００２０】比較として、平均粒径０．２〜５μｍのＣ
ｏＳｎ型窒化タンタルの粉末をタンタル製カプセルに入
れ、３ＧＰａ、１５００℃で１０分間処理してＷＣ型窒
化タンタルの比較品１を作製した。こうして得た比較品
１のＷＣ型窒化タンタルを上述の本発明品１〜６と同様
に調べて、その結果を表１に併記した。For comparison, C having an average particle size of 0.2 to 5 μm is used.
A powder of oSn type tantalum nitride was placed in a tantalum capsule and treated at 3 GPa and 1500 ° C. for 10 minutes to prepare a comparative product 1 of WC type tantalum nitride. The WC-type tantalum nitride of comparative product 1 thus obtained was examined in the same manner as in the above-described products 1 to 6 of the present invention, and the results are also shown in Table 1.
【００２１】[0021]
【表１】 [Table 1]
【００２２】[0022]
【実施例２】実施例１で得た本発明品３のＷＣ型窒化タ
ンタルと、市販の粉末である立方晶窒化ホウ素（ＣＢ
Ｎ），窒化チタン，炭化タングステン，窒化アルミニウ
ムおよびアルミニウムを用いて、表２の本発明品７〜８
に示すような配合組成とし、この組成の混合粉末をそれ
ぞれ５ＧＰａ，１５００℃の静的超高圧にて焼結し、本
発明の焼結体７〜８を得た。Example 2 WC-type tantalum nitride of the product 3 of the present invention obtained in Example 1 and cubic boron nitride (CB) which is a commercially available powder.
N), titanium nitride, tungsten carbide, aluminum nitride and aluminum.
And a mixed powder of this composition was sintered at a static ultrahigh pressure of 5 GPa and 1500 ° C. to obtain sintered bodies 7 to 8 of the present invention.
【００２３】比較として、実施例１で得た比較品１のＷ
Ｃ型窒化タンタルと、上述の各市販の粉末を用いて、本
発明品７〜８と同組成となるように配合し、これらを本
発明品７〜８と同条件で焼結して比較品２〜３を得た。For comparison, W of the comparative product 1 obtained in Example 1
C-type tantalum nitride and each of the above-mentioned commercially available powders were blended so as to have the same composition as the products 7 to 8 of the present invention, and these were sintered under the same conditions as the products 7 to 8 of the present invention for comparison. 2-3 were obtained.
【００２４】こうして得た本発明の焼結体７〜８と比較
の焼結体２〜３の硬さを測定して、表２に併記した。ま
た、窒化タンタルは、それぞれの焼結体をＸ線回折し、
ＷＣ型窒化タンタルの回折線から格子定数を求めて、格
子定数から換算して確認した。The hardnesses of the thus obtained sintered bodies 7 to 8 of the present invention and comparative sintered bodies 2 to 3 were measured and are also shown in Table 2. In addition, tantalum nitride is subjected to X-ray diffraction of each sintered body,
The lattice constant was obtained from the diffraction line of WC-type tantalum nitride, and the conversion was confirmed from the lattice constant.
【００２５】次に、本発明の焼結体７〜８と比較の焼結
体２〜３を用いて、それぞれを超硬合金の刃先部となる
ようにロー付けし、被削材ＦＣ２５（ＨB２４０）、切
削速度３５０ｍ／ｍｉｎ、切込み０．５ｍｍ、送り速度
０．１５ｍｍ／ｒｅｖ、乾式による連続旋削試験を行
い、平均逃げ面摩耗量が０．１ｍｍまたは欠損するまで
の寿命切削時間を求めて、その結果を表２に併記した。Next, using the sintered bodies 2 to 3 of the present invention and the sintered bodies 2 to 3 of the comparison, they were brazed so as to become the cutting edges of the cemented carbide, and the work material FC25 (H B 240), cutting speed 350 m / min, depth of cut 0.5 mm, feed rate 0.15 mm / rev, continuous dry turning test is performed, and average life flank wear amount is 0.1 mm The results are also shown in Table 2.
【００２６】[0026]
【表２】 [Table 2]
【００２７】[0027]
【発明の効果】本発明のＷＣ型窒化タンタルは、従来の
亜化学量論組成のＷＣ型窒化タンタルに比べて、高硬度
であるという効果がある。また、本発明のＷＣ型窒化タ
ンタルの合成方法は、従来の方法に比べて、低温でもっ
て高収率で、かつ化学量論組成またはその近似範囲のＷ
Ｃ型窒化タンタルを合成できるというすぐれた効果があ
る。The WC-type tantalum nitride of the present invention has the effect of having a higher hardness than the conventional sub-stoichiometric WC-type tantalum nitride. In addition, the method for synthesizing WC-type tantalum nitride of the present invention has a high yield at low temperature and a stoichiometric composition or its approximate range of W as compared with the conventional method.
It has an excellent effect that C-type tantalum nitride can be synthesized.
【００２８】さらに、本発明の焼結体は、従来のＷＣ型
窒化タンタルの含有した同一組成の焼結体に比べて、高
硬度でかつ耐摩耗性が顕著にすぐれるという効果があ
る。Further, the sintered body of the present invention has an effect that it has high hardness and remarkably excellent wear resistance as compared with the conventional sintered body of the same composition containing tantalum nitride.
【図１】実施例１で用いたピストンシリンダー型超高圧
装置に用いる試料アセンブリーの縦断面図である。FIG. 1 is a vertical cross-sectional view of a sample assembly used in a piston-cylinder type ultra-high pressure device used in Example 1.
【図２】実施例１で回折したＸ線回折パターンである。2 is an X-ray diffraction pattern diffracted in Example 1. FIG.
１ 試料 ２ ＢＮ製またはＭｇＯ製カプセル ３ ＭｇＯ製カプセル ４ グラファイト ５ パイレックスガラス ６ タルク ７ 熱電対用装入管 ａ ＣｏＳｎ型窒化タンタルの回折パターン ｂ ＷＣ型窒化タンタルの回折パターン 1 Sample 2 BN or MgO Capsule 3 MgO Capsule 4 Graphite 5 Pyrex Glass 6 Talc 7 Charging Tube for Thermocouple a a Diffraction pattern of CoSn type tantalum nitride b b Diffraction pattern of WC type tantalum nitride
Claims (3)
〜１．１２モル含有してなることを特徴とするＷＣ型窒
化タンタル。1. Nitrogen is 0.95 with respect to 1 mol of tantalum.
˜1.12 mol of WC-type tantalum nitride.
容量％以上と、残りセラミックスおよび／または金属と
からなることを特徴とするＷＣ型窒化タンタルを含む焼
結体。2. The WC type tantalum nitride 10 according to claim 1.
A sintered body containing WC-type tantalum nitride, which is characterized by being made up of a ceramics content and / or a metal with a capacity% or more.
粉体または成形体を１〜３ＧＰａの圧力、１０００〜１
８００℃の静的超高圧をかけて、該粉体または該成形体
の中のＣｏＳｎ型窒化タンタルをタンタル１モルに対
し、窒素０．９５〜１．１２モル含有してなるＷＣ型窒
化タンタルに変換させることを特徴とするＷＣ型窒化タ
ンタルの合成方法。3. A powder or a compact containing CoSn-type tantalum nitride is applied at a pressure of 1 to 3 GPa and a pressure of 1000 to 1
A WC type tantalum nitride containing 0.95 to 1.12 mol of nitrogen per 1 mol of tantalum of CoSn type tantalum nitride in the powder or the molded body under static ultrahigh pressure of 800 ° C. A method for synthesizing a WC-type tantalum nitride, which comprises converting.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12342593A JPH06305732A (en) | 1993-04-27 | 1993-04-27 | Wc type tantalum nitride and method for synthesizing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12342593A JPH06305732A (en) | 1993-04-27 | 1993-04-27 | Wc type tantalum nitride and method for synthesizing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06305732A true JPH06305732A (en) | 1994-11-01 |
Family
ID=14860248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12342593A Withdrawn JPH06305732A (en) | 1993-04-27 | 1993-04-27 | Wc type tantalum nitride and method for synthesizing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06305732A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016044113A (en) * | 2014-08-27 | 2016-04-04 | 国立研究開発法人物質・材料研究機構 | High-pressure phase wc type tan sintered body and method for producing the same |
| CN107311663A (en) * | 2017-04-01 | 2017-11-03 | 四川大学 | A kind of new tantalum nitride hard alloy and preparation method thereof |
| WO2020017191A1 (en) * | 2018-07-17 | 2020-01-23 | 住友電気工業株式会社 | Sintered body, powder, and production method for powder |
| CN114790112A (en) * | 2021-01-26 | 2022-07-26 | 四川大学 | High-hardness and high-heat-stability tantalum nitride block prepared based on domestic cubic press |
-
1993
- 1993-04-27 JP JP12342593A patent/JPH06305732A/en not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016044113A (en) * | 2014-08-27 | 2016-04-04 | 国立研究開発法人物質・材料研究機構 | High-pressure phase wc type tan sintered body and method for producing the same |
| CN107311663A (en) * | 2017-04-01 | 2017-11-03 | 四川大学 | A kind of new tantalum nitride hard alloy and preparation method thereof |
| WO2020017191A1 (en) * | 2018-07-17 | 2020-01-23 | 住友電気工業株式会社 | Sintered body, powder, and production method for powder |
| CN112399966A (en) * | 2018-07-17 | 2021-02-23 | 住友电气工业株式会社 | Sintered body, powder, and powder production method |
| JPWO2020017191A1 (en) * | 2018-07-17 | 2021-08-05 | 住友電気工業株式会社 | Sintered body |
| CN114790112A (en) * | 2021-01-26 | 2022-07-26 | 四川大学 | High-hardness and high-heat-stability tantalum nitride block prepared based on domestic cubic press |
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