JPH06302877A - Magnetoresistance element and thin-film magnetic head using it - Google Patents

Abstract

PURPOSE:To obtain a magnetoresistance element which is very sensitive to a magnetic field and has a big rate of change of magnetic resistance by forming current terminals to be connected to the magnetoresistance element in an upper and a lower layer part of an artificial lattice thin film and by mainly using a magnetoresistance effect in the thickness direction of the artificial lattice thin film. CONSTITUTION:On a glass substrate 10, a magnetoresistance element 11 which is an artificial lattice thin film, a Cr lower layer part current terminal 12 and an Au upper layer part current terminal 13, both of which are for applying driving current, are formed. Using a hypercomplex sputtering equipment, the magnetoresistance element of the following structure is manufactured. Cr (100)/[Cu (20)/NiCoFe (39)]n/Au (100) (the figure in paren theses indicates the thickness in Angstrom , n is the number of layers). For a target, Ni0.8Co0.1Fe0.1 (magnetic layer). Cu (non-magnetic layer) of 80mm in diameter is used. The film thickness is controlled by a shutter. The number of layers is 40.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element used in a sensor and a thin film magnetic head used in a magnetic recording / reproducing apparatus, and in particular, a high sensitivity using mainly a magnetoresistive effect in the thickness direction of an artificial lattice thin film. The present invention relates to a magnetoresistive effect element and a magnetoresistive effect type thin film magnetic head.

[0002]

2. Description of the Related Art A magnetoresistive effect element is an element utilizing the magnetoresistive effect (a phenomenon in which the resistance between terminals changes according to the strength of a magnetic field), and is used as a magnetic sensor, particularly as a memory of an information processing device. It is often used as a reading head for magnetic devices. Particularly, in a magnetic recording apparatus in which a recording medium runs at a low speed, a magnetoresistive thin film magnetic head whose reproduction output does not depend on speed is used. In recent years, higher recording density of recording media, higher data transfer rate,
As the number of channels increases, a magnetic head (for example, a thin film head) having higher sensitivity, that is, higher reproduction output is desired.

A conventional magnetoresistive thin film magnetic head will be described below. FIG. 10 shows a conventional magnetoresistive thin film magnetic head. On the magnetic substrate 100, a gap insulating layer 101, a magnetoresistive effect element 102 such as a Ni _0.8 —Fe _0.2 alloy thin film, and a pair of current terminals 103.
a, 103b, and a front yoke 105 and a back yoke 106 for guiding the magnetic tape signal magnetic flux from the magnetic tape sliding surface 104 to the magnetoresistive effect element are sequentially laminated via an insulating layer (not shown). At present, an artificial lattice thin film is used as a magnetoresistive element (for example, Japanese Patent Laid-Open No.
No. 247607) has been invented. Also,
Fe / Cr has been reported as an artificial lattice thin film in which electrodes are arranged in the thickness direction of the artificial lattice thin film. The magnetoresistive effect of this Fe / Cr artificial lattice thin film, that is, the rate of change in resistance (Δρ / ρ) ) Shows a large value at low temperature, but is small at several% at room temperature, and the saturation magnetic field (hereinafter Hs
Is as large as 15 KOe, and as a result, the sensitivity was not improved for the magnetoresistive effect element and the magnetoresistive effect type thin film magnetic head. (JP-A-4-12330
6).

[0004]

In the conventional magnetoresistive effect thin film magnetic head, stable and highly sensitive output is obtained, and the stability of the magnetoresistive effect thin film magnetic head against a disturbance magnetic field, bulk There was a problem of Hausen noise. In order to realize stability against a disturbance magnetic field and reduction of Barkhausen noise, measures such as a uniaxial structure of a magnetoresistive effect element are taken. But,
The output of the magnetoresistive effect thin-film magnetic head is mainly determined by the original resistance change rate (Δρ / ρ) of the magnetoresistive effect element and Hs, and thus the resistance change rate (Δρ / ρ) of the magnetoresistive effect element. It is necessary to improve ρ) and reduce the saturation magnetic field. In the Ni _0.8 Fe _0.2 alloy thin film generally used for the magnetoresistive effect element, the resistance change rate (Δ
Since ρ / ρ) is 2.5% at the maximum and Ni _0.8 Co _0.2 alloy thin film is 5.8% at the maximum, there is a problem that a higher reproduction output cannot be obtained. On the other hand, in the magnetoresistive effect element using the artificial lattice thin film (the magnetoresistive effect element in which the electrodes are arranged in the thickness direction of the Fe / Cr artificial lattice thin film), the resistance change rate (Δρ / ρ) is large, but Hs is large and the sensitivity is high. However, there is a problem that it cannot be applied as a magnetoresistive effect element and a magnetoresistive effect type thin film head.

[0005]

In order to solve the above-mentioned problems, the present invention uses NiFe, NiC as a magnetoresistive effect element.
o, CoFe, NiFeCo / Cu, Ag, Au, etc., an artificial lattice thin film having a large resistance change rate (Δρ / ρ) and a small Hs at room temperature is used, and the current terminal connected to the magnetoresistive effect element is connected to the artificial lattice. The thin film was provided in the upper and lower layers, and the magnetoresistive effect mainly in the thickness direction of the artificial lattice thin film was used. As a result, the magnetoresistive effect is about 2 to 3 times as large as the in-plane use, and Hs shows a small value with almost no change. Further, by patterning to increase the pattern of the magnetoresistive effect element, the influence of the current terminal portion can be suppressed, and a highly sensitive magnetoresistive effect element can be realized.

Particularly, the main component of the magnetic layer is

[0007]

[Equation 1]

X and X'are atomic composition ratios, respectively.

[0009]

[Equation 2]

The nonmagnetic layer is preferably made of Cu, Ag or Au. In addition to the above, the main component of the magnetic layer is

[0011]

[Equation 3]

Where Y and Y'are atomic composition ratios, respectively.

[0013]

[Equation 4]

The nonmagnetic layer is preferably made of Cu, Ag or Au. Here, the magnetic layer is a magnetic material having a small magnetostriction, and (Equation 2) and (Equation 4) are composition ranges required to satisfy this condition.

The magnetoresistive effect element and the magnetoresistive effect type thin film magnetic head using the magnetoresistive effect element use the magnetoresistive effect in the thickness direction with respect to the film surface regardless of the pattern and manufacturing method of the magnetoresistive effect element. It goes without saying that the same effect can be obtained as long as it is a pattern or a method for producing a pattern.

[0016]

The magnetoresistive effect of the artificial lattice thin film is due to the antiferromagnetic interaction between the magnetic layers separated by the nonmagnetic layer, and the magnetizations of the adjacent layers are antiparallel to each other at zero magnetic field. When a magnetic field is applied, the magnetization of each layer is oriented in parallel. The electric resistance is large when the magnetizations are antiparallel, and small when they are parallel. This is a phenomenon caused by the scattering of current due to the arrangement of magnetization, but when an artificial lattice thin film is used in-plane, electron scattering due to the arrangement of magnetization is the main cause of resistance change. On the other hand, when the artificial lattice thin film is used in the thickness direction, the effect of scattering at the interface between the magnetic layer and the non-magnetic layer becomes large in addition to the electron scattering due to the magnetization arrangement, so that the rate of change in resistance is larger than that in the plane. (Δρ / ρ) is obtained. Moreover, since the external magnetic field is applied in the in-plane direction, Hs hardly changes.

With this configuration, Hs hardly changes, and the original resistance change rate of the magnetoresistive effect element (Δρ /
Since ρ) is improved, the sensitivity of the magnetoresistive effect element and the reproduction output of the magnetoresistive thin film magnetic head are improved.

[0018]

EXAMPLE In the case of the in-plane of the magnetoresistive effect element using the Fe / Cr artificial lattice thin film, the resistance change rate (Δρ / ρ) is large, but Hs is also large. Regarding the magnetoresistive effect element in which electrodes are arranged in the thickness direction of the Fe / Cr artificial lattice thin film,
Although the rate of change in resistance (Δρ / ρ) is greater than in-plane, H
There is also a report that s is large with almost no change in the plane (JP-A-4-123306).

On the other hand, it has been reported that FeNiCo / Cu alloys and the like have a large resistance change rate (Δρ / ρ) within the plane even at room temperature and a small Hs (for example, JP-A-4-24).
7607). (Equation 1) Ni-rich NiFeC
The o-based alloy exhibits a small magnetostriction and exhibits soft magnetism when the composition ratio thereof satisfies (Equation 2). The typical one is Ni _0.8 F
e _0.1 Co _0.1 , Ni _0.8 Co _0.2 , Ni _0.8 Co _0.2, etc. On the other hand, the Co-rich CoNiFe-based alloy of (Equation 3) also exhibits a small magnetostriction when satisfying (Equation 4). A typical example thereof is Fe _0.9 Co _0.1 or the like.

The magnetic layer must be a low magnetostrictive film. This is because it is practically necessary to operate with a small magnetic field, and when used in a magnetic head or the like, large magnetostriction causes noise. The Ni-rich NiF shown in (Equation 1) and (Equation 2) that satisfy this condition.
There is an eCo-based film. Further, different from this, the low magnetostriction Co-rich CoNi represented by the above (Equation 3) and (Equation 4) is used.
An Fe-based film may be used, and this and the above (Equation 1),
You may use it, combining with the magnetic thin film layer of (Formula 2).

The non-magnetic layer interposed between these magnetic layers is a non-magnetic layer with little reaction at the interface with the magnetic thin film layer having the composition represented by the above (Formula 1) to (Formula 4). Cu, Ag, Au are necessary and satisfy this condition.
Etc. are suitable. Therefore, in the present invention, with the above low magnetostriction,
Moreover, an artificial lattice thin film having a composition with a large resistance change rate (Δρ / ρ) and a small Hs at room temperature is used, and the current terminals connected to the magnetoresistive effect element are provided on the upper layer portion and the lower layer portion of the artificial lattice thin film. The magnetoresistive effect was measured mainly in the thickness direction of the artificial lattice thin film. Specific examples will be shown below.

(Embodiment 1) (FIG. 1) is a first embodiment of the present invention. In particular, the configuration of the magnetoresistive effect element portion is illustrated. In this embodiment, a magnetoresistive element 11 made of an artificial lattice thin film, a Cr lower layer current terminal 12 and an Au upper layer current terminal 13 for applying a drive current are formed on a glass substrate 10. A multi-source sputtering device was used for film formation to form a magnetoresistive effect element having the following structure. Cr (100) / [Cu (20) / NiCoFe (3
0)] _n / Au (100) (() indicates thickness (Å), n represents the number of laminations) Note that the target is Ni _0.8 C each having a diameter of 80 mm.
o _0.1 Fe _0.1 (magnetic layer) and Cu (non-magnetic layer) were used, and each film thickness was controlled by a shutter. In addition, the number of stacks n = 4
It was set to 0.

FIG. 2 shows a method of forming the magnetoresistive effect element 11. The lower layer current terminal 22 of the Cr thin film is formed on the glass substrate 20 by a sputtering apparatus (FIG. 2 (A)).
The magnetoresistive element 21 having the above-described structure is formed on the lower layer current terminal 22 (FIG. 2B), and the Au upper layer current terminal 23 is formed thereon by the sputtering method (FIG. 2C). .

In the first embodiment of the present invention, since the lower layer current terminal 12 and the upper layer current terminal 13 are formed so as to sandwich the magnetoresistive effect element 11 (FIG. 1), the driving current is mainly Flow in the thickness direction with respect to the film surface. The measurement results are shown in (FIG. 3). When the drive current flows in the in-plane direction, that is, the resistance change rate (Δρ / ρ) 32 in the direction parallel to the film surface is 16%, and the drive current is in the direction perpendicular to the surface, that is, to the film surface. As a result, the resistance change rate (Δρ / ρ) 33 in the thickness direction was 34%, and the resistance change rate (Δρ / ρ) in the direction perpendicular to the film surface was about doubled. Moreover, Hs is almost unchanged, about 200 Oe
Met. Therefore, the amount of resistance change is also approximately doubled, and the sensitivity of the magnetoresistive effect element and the reproduction output of the magnetoresistive thin film magnetic head are improved.

(Embodiment 2) FIG. 4 shows a second embodiment of the present invention. Similar to (FIG. 1), the configuration of the magnetoresistive effect element portion is illustrated. In this example, the glass substrate 40 and the magnetoresistive effect element 4
1 and Cr lower layer current terminal 42 for applying drive current, Au upper layer current terminal 43, insulating layer (resist) 4
It is formed from four. The structure of the magnetoresistive effect element is
Similar to (Example 1), Ni _0.8 Co _0.1 having a diameter of 80 mm
Fe _0.1 (magnetic layer) and Cu (non-magnetic layer) targets were used. The pattern forming method is shown below (FIG. 5). After the Cr lower layer current terminal 52 is formed on the glass substrate 50 by the sputtering method (FIG. 5A), the magnetoresistive effect element 5 is formed.
1 is formed on the lower layer current terminal (FIG. 5 (B)). After that, a resist is applied and a mask 55 is formed using a photolithography technique (FIG. 5C).

After etching to the thickness of the lower layer current terminal 52 by the dry etching method (FIG. 5D), a resist is applied again and a mask 54 is formed, and then the thickness of the magnetoresistive element 51 is reached by the ion milling method. Flatten (Fig. 5
(E)). Then, the upper layer current terminal 53 is formed by the sputtering method (FIG. 5 (F)). In the second embodiment of the present invention, the magnetoresistive effect element 51, the lower layer current terminal 52, and the upper layer current terminal 53 are patterned (FIG. 4) to form the lower layer current terminal 42 and the upper layer current. The influence of the terminal 43 is reduced. (FIG. 6) shows the resistance change rate (Δρ / ρ) 61 in the case where the magnetoresistive effect element using the magnetoresistive effect element having the above-mentioned configuration is not patterned, and the measurement result when the patterning is performed.

When the magnetoresistive effect element is not patterned, the resistance change rate (Δρ / ρ) 61 is 34%, and when the magnetoresistive effect element is patterned, the resistance change rate (Δρ / ρ) 62 is 40. %, The effect of the current terminal is smaller in the case of patterning than in the case of no patterning, and the resistance change rate (Δ
ρ / ρ) was obtained, and Hs was about 200 Oe without change.

(Embodiment 3) FIG. 7 shows a third embodiment of the present invention. (Figure 1),
Similar to (FIG. 4), the configuration of the magnetoresistive effect element portion is illustrated. In this embodiment, the glass substrate 70, the magnetoresistive effect elements 71a, 71b, 71c and 71d and the Cr lower layer current terminals 72a and 72 for applying the drive current.
b, Au upper layer current terminals 73a, 73b, 73c, insulating layers (resist) 74a, 74b, 74c, 74d, 74
It is formed from e. The structure of the magnetoresistive element is the same as that of (Example 1) or (Example 2), and Ni _0.8 Co _0.1 Fe _0.1 (magnetic layer) and Cu having a diameter of 80 mm are used.
A (non-magnetic layer) target was used.

The pattern forming method is shown below (FIG. 8).
After the Cr lower layer current terminal 82 is formed on the substrate 80 by the sputtering method (FIG. 8A), the magnetoresistive effect element 81 having the above-described structure is formed on the lower layer current terminal 82 by the sputtering method (FIG. 8). (B)) After that, a resist is applied and masks 85a, 85b, 85 are formed by using a photolithography technique.
c and 85d are formed (FIG. 8C). The magnetoresistive effect elements 81a, 81b, 81c and 8 are etched by dry etching to the thickness of the lower layer current terminal 82.
1d is formed (FIG. 8D).

The resist is applied again, and the masks 86a and 86b are formed by using the photolithography technique (see FIG. 8).
(E)), unnecessary lower layer current terminal portions 87a, 87b, 87c are removed by dry etching to form lower layer current terminals 82a, 82b (FIG. 8 (F)). The resist is applied again, and flattened by the ion milling method to the thickness of the magnetoresistive element 81a, 81b, 81c, 81d, and insulating layers (resist) 84a, 84b, 84c, 84.
d and 84e are formed (FIG. 8G). The Au upper layer current terminal 83 is formed by sputtering (FIG. 8H).

The resist is applied again, and masks 88a, 88b, 88c are formed by photolithography (FIG. 8).
(I)). After that, unnecessary current terminal portions 89a and 89b are removed by a dry etching method (FIG. 8 (J)). Finally, the masks 88a, 88b, 88c are removed (see FIG. 8).
(K)). In the third embodiment, the magnetoresistive effect element is divided, and a current terminal portion connected to the magnetoresistive effect element is formed so that a driving current flows in the thickness direction of the magnetoresistive effect element as much as possible (FIG. 7), and a film is formed. The surface is formed so that the magnetoresistive effect in the thickness direction can be utilized as much as possible.

FIG. 9 shows the resistance change rate (Δ) when the magnetoresistive effect element has a single pattern.
ρ / ρ) 91 and the resistance change rate (Δρ / ρ) 92 when the pattern of the magnetoresistive effect element is divided. The resistance change rate (Δρ / ρ) 91 when the pattern of the magnetoresistive effect element is single is 40%, and the resistance change rate (Δρ / ρ) when the pattern of the magnetoresistive effect element is divided.
ρ) 92 is 45%, and the resistance change rate (Δρ / ρ) is about 5% larger when the pattern of the magnetoresistive effect element is divided than when the pattern is single. Moreover, Hs is about 2
It did not change to 00 Oe.

Example 4 Similar to Example 3, a magnetoresistive effect element having the following constitution was prepared by photolithography. Cr (100) / [Cu (20) / NiCoFe (2
0)] _n / Au (100) (() indicates thickness (Å), n represents the number of laminations) Note that the target is Ni _0.8 C each having a diameter of 80 mm.
o _0.05 Fe _0.15 (magnetic layer), Cu (non-magnetic layer),
Each film thickness was controlled by a shutter. The number of stacks n =
It was set to 50. When the characteristics were measured, the resistance change rate (Δρ / ρ) was 30% in the plane, 55% in the thickness direction, and H
s was 200 Oe.

(Example 5) Similar to (Example 3) and (Example 4), a magnetoresistive effect element having the following constitution was prepared by photolithography. Cr (100) / [Cu (20) / NiFe (20)]
_n / Au (100) (() indicates thickness (Å), n indicates the number of laminations) The target is Ni _0.8 F each with a diameter of 80 mm.
e _0.2 (magnetic layer) and Cu (non-magnetic layer) were used, and each film thickness was controlled by a shutter. Further, the number of laminations was set to n = 50. When the characteristics were measured, the rate of change in resistance (Δρ /
ρ) is 15% in the plane, 32% in the thickness direction, and Hs is 16
It was 0 Oe.

(Example 6) Similar to (Example 3), (Example 4) and (Example 5),
A magnetoresistive effect element having the following configuration was created by photolithography technology. Cr (100) / [Cu (20) / CoFe (20)]
_n / Au (100) (() indicates thickness (Å), n indicates the number of laminations.) Targets are Co _0.9 F with a diameter of 80 mm, respectively.
e _0.1 (magnetic layer) and Cu (non-magnetic layer) were used, and each film thickness was controlled by a shutter. Further, the number of laminations was set to n = 50. When the characteristics were measured, the rate of change in resistance (Δρ /
ρ) is 22% in the plane, 45% in the thickness direction, and Hs is 21
It was 0 Oe.

(Example 7) Similar to (Example 3), (Example 4), (Example 5) and (Example 6), a magnetoresistive effect element having the following constitution was prepared by photolithography. . Cr (100) / [Cu (20) / NiCo (30)]
_n / Au (100) (() indicates thickness (Å), n indicates the number of laminations) The target is Ni _0.8 C each with a diameter of 80 mm.
o _0.2 (magnetic layer) and Cu (non-magnetic layer) were used, and each film thickness was controlled by a shutter. In addition, the number of laminations was set to n = 40. When the characteristics were measured, the rate of change in resistance (Δρ /
ρ) is 25% in the plane, 48% in the thickness direction, and Hs is 21
It was 5 Oe.

[0037]

As described above, according to the present invention, the rate of change in resistance (Δρ / ρ) is obtained by using the magnetoresistive effect in the thickness direction with respect to the film surface of the magnetoresistive effect element composed of the artificial lattice thin film having a small Hs. ) Is larger than the resistance change rate (Δρ / ρ) of the magnetoresistive effect in the direction parallel to the film surface (Δρ / ρ).
/ Ρ) is obtained. Moreover, even if Hs does not change, the resistance change amount can be relatively increased by using a composition in which Hs is originally small.

By patterning the magnetoresistive effect element and the current terminal connecting it, the influence of the current terminal portion can be suppressed as compared with the case where it is not patterned, and since the thickness direction is used with respect to the film surface, it is more conventional than before. The size can be reduced, and even if the size is reduced, a larger rate of change in resistance (Δρ / ρ) can be obtained. Then, by patterning and utilizing the magnetoresistive effect in the thickness direction as much as possible, higher sensitivity can be obtained. For the above reasons, the present invention realizes a magnetoresistive effect element capable of obtaining high sensitivity and a magnetoresistive effect thin film magnetic head capable of obtaining high reproduction output.

[Brief description of drawings]

FIG. 1 is a perspective view of a magnetoresistive effect element showing Example 1 of the present invention.

FIG. 2 is a sectional view of a process of forming a magnetoresistive effect element showing Example 1 of the present invention.

FIG. 3 shows a conventional magnetoresistive effect element 31 showing Embodiment 1 of the present invention, an in-plane magnetoresistive effect element 32 using an artificial lattice thin film, and a magnetoresistive effect element 33 in the thickness direction with respect to the in-plane. Diagram showing resistance change rate (Δρ / ρ) against external magnetic field

FIG. 4 is a perspective view of a magnetoresistive effect element showing Embodiment 2 of the present invention.

FIG. 5 is a sectional view of a process of forming a magnetoresistive effect element portion showing Embodiment 2 of the present invention.

FIG. 6 is a magnetoresistive element using a magnetoresistive effect in the thickness direction with respect to the in-plane of the artificial lattice thin film showing Example 2 of the present invention. Diagram showing (Δρ / ρ)

FIG. 7 is a perspective view of a magnetoresistive effect element portion showing a third embodiment of the present invention.

FIG. 8 is a sectional view of a process of forming a magnetoresistive effect element showing Example 3 of the present invention.

9 is a magnetoresistive element using the magnetoresistive effect in the thickness direction with respect to the in-plane artificial lattice thin film according to the third embodiment of the present invention, and has a single pattern 91 and a plurality of patterns 92. FIG.
Of change rate of resistance (Δρ / ρ) to external magnetic field

FIG. 10 is an external view of a conventional magnetoresistive thin film head.

[Explanation of symbols]

10, 20, 40, 50, 70, 80 Substrates 11, 21, 41, 51, 71a, 71b, 71c, 7
1d Artificial lattice thin film magnetoresistive effect element 12, 22, 42, 52, 72a, 72b, 82, 82
a, 82b Lower layer current terminal 13, 23, 43, 53, 73a, 73b, 73c, 8
3, 83a, 83b, 83c Upper layer current terminal 31 Rate of change in resistance of conventional FeNi alloy thin film with respect to magnetic field (Δρ / ρ) 32 External when current is passed mainly parallel to film surface of artificial lattice thin film Rate of change in resistance to magnetic field (Δρ /
ρ) 33 The rate of change in resistance (Δρ / ρ) to an external magnetic field when a current is mainly applied to the film surface of the artificial lattice thin film of the present invention in the thickness direction (Δρ / ρ) 44, 54, 74a, 74b, 74c, 74d, 74e
84a, 84b, 84c, 84d, 84e Insulating layer (resist) 55 Mask 61 Resistance change rate with respect to an external magnetic field (Δρ /
ρ) 62 Resistance change rate (Δρ / ρ) 81, 81a, 81b, 81c, 81d with respect to an external magnetic field when the artificial lattice thin film magnetoresistive effect element is patterned 85 a, 85b, 85c, 85d Mask (for magnetoresistive effect element processing) 86a, 86b Mask (for lower layer current terminal processing) 87a, 87b, 87c Unnecessary lower layer current terminal portion (etched portion) 88a, 88b, 88c Mask (upper layer current terminal processing) 89a, 89b Unnecessary upper layer current terminal portion (etching portion) 91 When the pattern of the magnetoresistive effect element using the artificial lattice thin film is single 92 The pattern of the magnetoresistive effect element using the artificial lattice thin film is plural Case 100 Magnetic substrate 101 Gap insulating layer 102 Magnetoresistive element 103a, 103b Current terminal 10 Magnetic tape sliding surface 105 front yoke 106 back yoke

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yasuhiro Kawabun 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (10)

[Claims] 1. A magnetoresistive effect element having a magnetic sensing part and a current terminal, wherein a magnetic layer of the magnetoresistive element which is the magnetic sensing part is an alloy film of two or more elements made of Ni, Fe and Co, A magnetoresistive effect element characterized in that a nonmagnetic layer is made of an artificial lattice thin film made of Cu, Ag, Au, or the like, and mainly uses the magnetoresistive effect in the thickness direction of the artificial lattice thin film. 2. Particularly, the magnetic layer is a film made of Ni, Fe, Co and containing two or more elements, and the non-magnetic layer is Cu, Ag, A.
In order to use the magnetoresistive effect mainly in the thickness direction of the artificial lattice thin film in the pattern of the artificial lattice thin film composed of u, etc. and the current terminal connecting the artificial lattice thin film and the artificial lattice thin film, The magnetoresistive effect element according to claim 1, wherein at least one pair of the current terminals for at least one artificial lattice thin film are formed in a lower layer portion and an upper layer portion of the artificial lattice thin film. 3. In particular, the magnetic layer is a film of two or more elements made of Ni, Fe, Co, and the nonmagnetic layer is Cu, Ag, A.
The artificial lattice thin film composed of u, etc. is patterned by a photolithography technique to connect the artificial lattice thin film and the current terminal for connecting the artificial lattice thin film to the magnetoresistive effect mainly in the thickness direction of the artificial lattice thin film. The magnetoresistive effect element according to claim 1, which is used. 4. A particular magnetic layer _{(Ni X -Co 1-X)} X 'Fe
The magnetoresistive effect element according to claim 1, 2 or 3, wherein _{1-X '} is a main component, and X = 0.4 to 1.0 and X' = 0.8 to 1.0. 5. A particular magnetic layer _{(Co Y Ni 1-Y)} Y 'Fe 1-Y'
4. The magnetoresistive element according to claim 1, wherein Y is 0.4 to 1.0 and Y '= 0.8 to 1.0. 6. A magnetoresistive thin-film magnetic head having a magnetic sensing portion, a bias conductor, and a current terminal, wherein the magnetic layer of the magnetoresistive element, which is the magnetic sensing portion, has at least two elements made of Ni, Fe, and Co. Alloy film of which the non-magnetic layer is Cu,
A magnetoresistive thin-film magnetic head comprising an artificial lattice thin film made of Ag, Au, etc., wherein the magnetoresistive effect mainly in the thickness direction of the artificial lattice thin film is used. 7. Particularly, the magnetic layer is an alloy film of two or more elements made of Ni, Fe and Co, and the non-magnetic layer is Cu, Ag,
In order to use the magnetoresistive effect mainly in the thickness direction of the artificial lattice thin film in the pattern of the artificial lattice thin film composed of Au, etc. and the current terminal connecting the artificial lattice thin film and the artificial lattice thin film, 7. The magnetoresistive effect thin film magnetic head according to claim 6, wherein at least one pair of the current terminals for at least one artificial lattice thin film are formed in a lower layer portion and an upper layer portion of the artificial lattice thin film. 8. Particularly, the magnetic layer is an alloy film of two or more elements made of Ni, Fe, Co, and the non-magnetic layer is Cu, Ag,
The artificial lattice thin film composed of Au, etc. is patterned, and the artificial lattice thin film and the current terminal for connecting the artificial lattice thin film are patterned by photolithography technique to obtain a magnetoresistive effect mainly in the thickness direction of the artificial lattice thin film. The magnetoresistive effect thin film magnetic head according to claim 6, which is used. 9. Particularly magnetic layer _{(Ni X Co 1-X)} X 'Fe 1-X'
9. The magnetoresistive effect thin film magnetic head according to claim 6, wherein X is 0.4 to 1.0 and X '= 0.8 to 1.0. 10. A particular magnetic layer _{(Co Y Ni 1-Y)} Y 'Fe
9. The magnetoresistive effect thin film magnetic head according to claim 6, 7 or 8, wherein _{1-Y '} is a main component and Y = 0.4 to 1.0 and Y' = 0.8 to 1.0.