JPH06302691A - Processing method for semiconductor wafer - Google Patents

Processing method for semiconductor wafer

Info

Publication number
JPH06302691A
JPH06302691A JP8371993A JP8371993A JPH06302691A JP H06302691 A JPH06302691 A JP H06302691A JP 8371993 A JP8371993 A JP 8371993A JP 8371993 A JP8371993 A JP 8371993A JP H06302691 A JPH06302691 A JP H06302691A
Authority
JP
Japan
Prior art keywords
wafer
semiconductor wafer
water
adhesive tape
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8371993A
Other languages
Japanese (ja)
Inventor
Toshimasa Yamagishi
利正 山岸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MODERN PLAST KOGYO KK
Original Assignee
MODERN PLAST KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MODERN PLAST KOGYO KK filed Critical MODERN PLAST KOGYO KK
Priority to JP8371993A priority Critical patent/JPH06302691A/en
Publication of JPH06302691A publication Critical patent/JPH06302691A/en
Pending legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To avoid contamination of a wafer due to adhesive of an adhesive tape and an environmental contamination due to processing. CONSTITUTION:The method for processing a semiconductor wafer comprises the steps of bonding an adhesive tape formed by combining a base material 1 of a water soluble film for back grinding, dicing the wafer and/or water soluble adhesive layer 2 to the wafer 4, mixing it, after the previous step is finished, with water to clean it, thereby dissolving or dispersing the material 1 and the layer 2 to be removed, and completely removing contaminant remaining on the surface of the wafer 4.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業の利用分野】本発明は半導体ウエハのバックグラ
インディング、ダイシングを目的とする工程において、
該ウエハの保護用ないし固定用、あるいはその双方の用
途を兼ねて粘着テープを使用する加工方法に関する。
BACKGROUND OF THE INVENTION The present invention relates to a process for back grinding and dicing of a semiconductor wafer,
The present invention relates to a processing method using an adhesive tape for the purpose of protecting and / or fixing the wafer, or for both purposes.

【0002】[0002]

【従来の技術】従来半導体ウエハのダイシング加工にお
いては、その前処理としてウエハ裏面を研磨するバック
グラインディング処理を実施した後にウエハをチップに
切断する「ダイシング」処理を行ない、その後にエキス
パンディング、ピックアップ、洗浄、乾燥、マウンティ
ングなどの一連の仕上げ工程を経るが、この過程におい
て粘着テープがウエハの支持用に使用されているのが現
状である。例えばバックグラインディング工程において
は粘着テープで研磨しない側の面を固定して保護しなが
ら残りの片面を研磨し、工程終了後に該テープを剥が
す。またダイシング工程では裏面を粘着テープで固定し
たままでチップに切断し、エキスパンディングを行った
後に該テープからピックアップしてマウンティングを行
なっている。特に一般用粘着剤を用いた粘着テープを使
用するとウエハの表面に残存して汚染を起す問題があ
り、これを避けるために、エキスパンディング工程では
UV処理して硬化可能な粘着剤も使用されている現状であ
る。
2. Description of the Related Art Conventionally, in the dicing process of a semiconductor wafer, as a pretreatment, a back grinding process for polishing the back surface of the wafer is performed, and then a "dicing" process for cutting the wafer into chips is performed, followed by expanding and picking up. Although a series of finishing processes such as cleaning, drying, and mounting are performed, the present situation is that the adhesive tape is used for supporting the wafer in this process. For example, in the back grinding step, the other surface is polished while fixing and protecting the surface not to be polished with an adhesive tape, and the tape is peeled off after the step is completed. In the dicing process, chips are cut while the back surface is fixed with an adhesive tape, expanded, and then picked up from the tape for mounting. In particular, when using an adhesive tape that uses a general-purpose adhesive, there is a problem that it remains on the surface of the wafer and causes contamination. To avoid this, in the expanding process,
At present, adhesives that can be cured by UV treatment are also used.

【0003】[0003]

【発明が解決しようとする課題】以上の問題に対して、
剥がした後にウエハを、あるいはそれをチップにした後
にフロン、塩素系有機溶剤、その他各種の有機溶剤を用
いて洗浄している。しかしこれらの溶剤を使用するとオ
ゾン層などの破壊、水質汚染、酸性雨などの環境汚染に
つながるという問題が生じる。またUV硬化を利用すると
製造工程中にUV照射装置が必要になるために設備費も維
持費もかさむし、それによって洗浄工程を全く省くとい
うわけにも行かないから、経費負担がかさむという問題
もあった。
[Problems to be Solved by the Invention]
After peeling, the wafer is cleaned, or after it is made into chips, it is cleaned using CFCs, chlorine-based organic solvents, and other various organic solvents. However, the use of these solvents causes problems such as destruction of the ozone layer, water pollution, and environmental pollution such as acid rain. Also, when UV curing is used, a UV irradiation device is required during the manufacturing process, which increases equipment costs and maintenance costs.Therefore, it is not possible to omit the cleaning process at all, which increases the cost burden. there were.

【0004】上記の問題点に鑑み、本発明は水洗浄だけ
を使用することにより、洗浄排水の処理技術も従来なみ
の簡単な方法で済み、安全で環境破壊を起こすことがな
い工程を提供することを目的とする。
In view of the above problems, the present invention provides a safe and environmentally-unfriendly process by using only water washing so that the technology for treating wash drainage can be as simple as conventional techniques. The purpose is to

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に、本発明の半導体ウエハの加工方法においては、バッ
クグラインディング工程とダイシング工程において粘着
テープで半導体ウエハの片面を被覆し、かつ剥離するも
のであるが、該粘着テープには従来使用している材料の
代わりに水溶性の材料を使用するものである。
In order to achieve the above object, in the method for processing a semiconductor wafer according to the present invention, one side of the semiconductor wafer is covered with an adhesive tape and peeled off in the back grinding step and the dicing step. However, a water-soluble material is used for the pressure-sensitive adhesive tape instead of the conventionally used material.

【0006】半導体ウエハをダイシングする工程で使用
する粘着テープは一般に図1に見られるように基材1 の
片面に粘着剤層2 を設け、さらに粘着剤層2 の露出面を
保護するために使用直前までは剥離フィルム3 を貼着し
た構造を採る。これをダイシング用に使用する時には、
まず剥離フィルム3 を除去し、次いで図2のように粘着
剤層2 の露出面にダイシング用のウエハ4 を固定し、基
材1 の露出面を治具5に固定する。バックグラインディ
ング用に粘着テープを利用する場合もほぼ同様の構造の
ものを同様に固定して作業する。
The adhesive tape used in the process of dicing a semiconductor wafer is generally used to form an adhesive layer 2 on one surface of a substrate 1 as shown in FIG. 1 and to protect the exposed surface of the adhesive layer 2. Until the last minute, the structure with the release film 3 attached is used. When using this for dicing,
First, the release film 3 is removed, and then the wafer 4 for dicing is fixed to the exposed surface of the adhesive layer 2 as shown in FIG. 2, and the exposed surface of the base material 1 is fixed to the jig 5. When using an adhesive tape for back grinding, work with a similar structure fixed in the same manner.

【0007】以上の構造の粘着テープに水溶性を付与す
るには、基材1 ならびに粘着剤層2に水溶性の材料を使
用する必要がある。
In order to impart water solubility to the pressure-sensitive adhesive tape having the above structure, it is necessary to use a water-soluble material for the base material 1 and the pressure-sensitive adhesive layer 2.

【0008】一般に基材1 に使用できる水溶性材料とし
て発明者が実際に試験した結果では、ポリビニールアル
コール、ポリアルキレンエーテル(ポリアルキレンオキ
サイド)のような合成樹脂系のもの、あるいはゼラチ
ン、多糖類などに属するものをフィルム化すれば使用可
能であることがわかった。
[0008] Generally, as a result of actual tests by the inventor as a water-soluble material that can be used as the substrate 1, synthetic resin-based materials such as polyvinyl alcohol and polyalkylene ether (polyalkylene oxide), gelatin, and polysaccharides. It was found that it can be used by making a film belonging to the category such as.

【0009】基材1 の片面に塗布形成する粘着剤にも水
溶性あるいは水分散性のものを塗布するが、水溶性粘着
剤は業界公知の粘着剤の一区分であって、広く使用され
ているものを利用できる。
A water-soluble or water-dispersible adhesive is also applied to the adhesive formed on one side of the base material 1. The water-soluble adhesive is a category of adhesive known in the art and is widely used. You can use what you have.

【0010】[0010]

【作用】本発明によれば、以上に例示したような構成の
粘着テープを半導体ウエハの片面に貼着使用するため
に、バックグラインディングないしダイシング加工を実
施後に水と混和して洗浄することにより基材と粘着剤層
のいずれの部分も容易に溶解ないし分散して除去できる
ので、ウエハ面に残存する汚染物を完全に除くことがで
き、しかも、排水処理に特別の配慮する必要が全くな
い。
According to the present invention, in order to stick and use the adhesive tape having the above-described structure on one side of a semiconductor wafer, it is possible to perform back grinding or dicing and then mix and wash with water. Since both the base material and the adhesive layer can be easily dissolved or dispersed and removed, contaminants remaining on the wafer surface can be completely removed, and there is no need to give special consideration to wastewater treatment. .

【0011】[0011]

【実施例】ポリビニールアルコール(電気化学工業
(株)製商品名デンカポパールB-05)を、水を溶媒とし
て液状とし、流延成型法により厚さ80μのシートとし
た。この片面に水溶性粘着剤(ダイセル化学工業(株)
製:セビアンA-886 )を塗布して、本実施例の粘着シー
トとした。一方、 厚さ80μの塩ビフィルムに放射線硬化
型粘着剤を塗布して、厚さ25μの粘着剤層を形成して従
来型の粘着シートとした。
[Examples] Polyvinyl alcohol (Denka Popearl B-05 manufactured by Denki Kagaku Kogyo Co., Ltd.) was made into a liquid using water as a solvent, and a sheet having a thickness of 80 μ was formed by a casting method. Water-soluble adhesive on one side (Daicel Chemical Industry Co., Ltd.)
(Manufactured by Sebian A-886) was applied to obtain a pressure-sensitive adhesive sheet of this example. On the other hand, a radiation-curable pressure-sensitive adhesive was applied to a vinyl chloride film having a thickness of 80 μm to form a pressure-sensitive adhesive layer having a thickness of 25 μm to obtain a conventional pressure-sensitive adhesive sheet.

【0012】次に径15cmのシリコーンウエハーをステン
レス製のフレームの枠内に配置し、ウェハーとフレーム
に同時に貼着し、ダイシング、エキスパンディングなど
通常の工程に沿う手順で粘着シートからピックアップし
た。
Next, a silicone wafer having a diameter of 15 cm was placed in the frame of a stainless steel frame, and the wafer and the frame were simultaneously attached and picked up from the pressure-sensitive adhesive sheet by a procedure such as dicing, expanding, etc., which is an ordinary process.

【0013】この場合、ウェハー表面には粘着シートか
ら糊移りして残存する付着物の痕跡が、実施例、従来型
ともに見られたが、それらチップを20℃の水中に3分間
浸漬することにより、実施例では完全に汚染物が除去で
きた。しかし、従来型の場合には水洗前と殆ど変化な
く、汚染物が除去できなかった。
In this case, traces of the adhered matter remaining after the adhesive transfer from the adhesive sheet were seen on the wafer surface in both the example and the conventional type. However, by immersing the chips in water at 20 ° C. for 3 minutes. In the example, contaminants could be completely removed. However, in the case of the conventional type, there was almost no change from before washing with water, and the contaminants could not be removed.

【0014】さらに本実施例の粘着シートを220 mm×22
0 mmに裁断して、500 ccの水に浸漬、20℃で3分間ゆっ
くり攪拌したところ、完全に溶解し、残留固形物が全く
見られなかった。
Further, the pressure-sensitive adhesive sheet of this embodiment is 220 mm × 22
It was cut into 0 mm pieces, immersed in 500 cc of water, and slowly stirred at 20 ° C. for 3 minutes. As a result, it was completely dissolved and no residual solid matter was observed.

【0015】[0015]

【発明の効果】本発明は上述の加工方法を採るので、次
に記載する効果を奏する。
Since the present invention employs the above-described processing method, it has the following effects.

【0016】本発明の半導体ウエハの加工方法において
は、バックグラインディング工程とダイシング工程にお
いて粘着テープで半導体ウエハの片面を被覆し、かつ剥
離するものであって、該粘着テープには従来使用してい
る材料の代わりに水溶性の材料を使用するという方法を
導入したために、テープを剥がした後も、あるいは剥が
さずにそのまま水洗浄だけで済むため、安全な操作がで
き、かつ、環境破壊などを防ぐことができる。なおこれ
に使用して生じた洗浄排水も、例えば活性汚泥法などの
従来の処理技術で済むので、生産の労力としても、経費
負担についても極めて有利になる。
In the method of processing a semiconductor wafer of the present invention, one side of the semiconductor wafer is covered with an adhesive tape and then peeled off in the back grinding step and the dicing step, which is conventionally used for the adhesive tape. Since a method of using a water-soluble material instead of the existing material has been introduced, it can be operated safely even after peeling the tape or without peeling, so safe operation and environmental damage can be done. Can be prevented. Since the cleaning wastewater generated by this process can be processed by the conventional treatment technology such as the activated sludge method, it is extremely advantageous in terms of production labor and cost burden.

【図面の簡単な説明】[Brief description of drawings]

【図1】半導体ウエハの加工に使用される粘着テープ製
品の構造を示す縦断面図である。
FIG. 1 is a vertical sectional view showing a structure of an adhesive tape product used for processing a semiconductor wafer.

【図2】ダイシングの場合に該粘着テープ製品をウエハ
とともに治具に固定使用する状態を示す縦断面図であ
る。
FIG. 2 is a vertical cross-sectional view showing a state where the adhesive tape product is fixedly used together with a wafer on a jig in the case of dicing.

【符号の説明】[Explanation of symbols]

1 基材 2 粘着剤層 3 剥離フィルム 4 ウエハ 5 治具 1 Base material 2 Adhesive layer 3 Release film 4 Wafer 5 Jig

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 粘着テープによって保持して半導体ウェ
ハの表面処理からダイシングするに至る加工工程におい
て、水溶性フィルムおよび/または水溶性粘着剤を組み
合わせてなる前記粘着テープをもって前記半導体ウエハ
の片面を被覆・剥離することにより、バックグラインデ
ィング工程および/またはダイシング工程を行なうこと
を特徴とする半導体ウエハの加工方法。
1. A surface of a semiconductor wafer is covered with a pressure-sensitive adhesive tape, which is a combination of a water-soluble film and / or a water-soluble pressure-sensitive adhesive, in a processing step from surface treatment of a semiconductor wafer held by a pressure-sensitive adhesive tape to dicing. A method of processing a semiconductor wafer, which comprises performing a back grinding step and / or a dicing step by peeling.
JP8371993A 1993-04-12 1993-04-12 Processing method for semiconductor wafer Pending JPH06302691A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8371993A JPH06302691A (en) 1993-04-12 1993-04-12 Processing method for semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8371993A JPH06302691A (en) 1993-04-12 1993-04-12 Processing method for semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH06302691A true JPH06302691A (en) 1994-10-28

Family

ID=13810328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8371993A Pending JPH06302691A (en) 1993-04-12 1993-04-12 Processing method for semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH06302691A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5844129A (en) * 1995-12-01 1998-12-01 Vacuumschmelze Gmbh Method for determining the magnetic contamination of a surface
JP2004253612A (en) * 2003-02-20 2004-09-09 Nitto Denko Corp Tentative fixing method of semiconductor wafer, electronic component, and circuit board

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5844129A (en) * 1995-12-01 1998-12-01 Vacuumschmelze Gmbh Method for determining the magnetic contamination of a surface
JP2004253612A (en) * 2003-02-20 2004-09-09 Nitto Denko Corp Tentative fixing method of semiconductor wafer, electronic component, and circuit board
JP4514409B2 (en) * 2003-02-20 2010-07-28 日東電工株式会社 Method for temporarily fixing semiconductor wafer, electronic component, and circuit board

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