JPH06302527A - Seal for semiconductor manufacturing equipment - Google Patents
Seal for semiconductor manufacturing equipmentInfo
- Publication number
- JPH06302527A JPH06302527A JP11639893A JP11639893A JPH06302527A JP H06302527 A JPH06302527 A JP H06302527A JP 11639893 A JP11639893 A JP 11639893A JP 11639893 A JP11639893 A JP 11639893A JP H06302527 A JPH06302527 A JP H06302527A
- Authority
- JP
- Japan
- Prior art keywords
- seal
- semiconductor manufacturing
- weight
- parts
- manufacturing equipment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体製造装置用シー
ルに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing equipment seal.
【０００２】[0002]
【従来技術および発明が解決しようとする課題】半導体
製造装置用シールは、半導体の基板であるシリコンウエ
ハー等の表面にエッチング、あるいは、薄膜を形成させ
る等の処理をするための加工室等に用いられるシールと
して適用され、該シールには、耐熱性、低ガス透過性の
他、該シールから塵が生じないこと（低発塵性）が要求
されている。2. Description of the Related Art A semiconductor manufacturing apparatus seal is used in a processing chamber or the like for processing such as etching or forming a thin film on the surface of a silicon wafer or the like which is a semiconductor substrate. In addition to heat resistance and low gas permeability, the seal is required not to generate dust (low dust generation).
【０００３】従来の半導体製造装置用シールに用いられ
ているエラストマーとしては、ふっ素系エラストマー、
シリコーン系エラストマーがある。ふっ素系エラストマ
ーは、通常、ポリオール架橋剤やアミン架橋剤が配合さ
れ、さらに、これらの架橋剤の他に、架橋促進のために
Ｍｇ、Ｐｂ等の重金属を含む受酸剤が配合される。ま
た、通常、圧縮永久歪み性向上のために、補強材として
カーボンブラック、酸化亜鉛等が配合されている。Fluorine-based elastomers are used as the elastomers used in conventional seals for semiconductor manufacturing equipment.
There are silicone elastomers. The fluoroelastomer is usually blended with a polyol cross-linking agent or an amine cross-linking agent, and in addition to these cross-linking agents, an acid acceptor containing a heavy metal such as Mg or Pb is blended in order to accelerate cross-linking. Further, in order to improve compression set, carbon black, zinc oxide or the like is usually blended as a reinforcing material.
【０００４】かかるシールは、シリコンウエハーへのエ
ッチング処理時等には、酸素やＣＦ4 雰囲気下等でプラ
ズマ照射されるので、換言すると、酸素やハロゲン等の
ガスが励起された状態にさらされるため、劣化しやす
く、その表面が劣化して脆くなり、該半導体製造装置用
シールが飛散し、シリコンウエハー上に付着する等、微
細な異物付着をも極端に嫌う半導体にとっては、上記シ
ールは好ましいものとはいえなかった。また、発泡ふっ
素ゴムシール用組成物として特開平４−３２３２３３が
あるが、ガス透過性が大きく、また、圧縮永久歪み特性
が劣るのため密封効果が十分でないので、真空状態下で
プラズマ照射するときには使用できなかった。また、シ
リコーンエラストマーは、ガス透過量が大きいため真空
状態下でプラズマ照射するときには使用できないという
問題があった。Such a seal is irradiated with plasma in an atmosphere of oxygen or CF 4 during etching of a silicon wafer, etc. In other words, a gas such as oxygen or halogen is exposed to an excited state. The above-mentioned seal is preferable for a semiconductor that easily deteriorates, its surface deteriorates and becomes brittle, and that the seal for the semiconductor manufacturing apparatus scatters and adheres on a silicon wafer, which is extremely unfavorable for adhesion of fine foreign matter. I couldn't say that. Further, there is JP-A-4-323233 as a foamed fluororubber sealing composition, but since the gas permeability is large and the compression set property is inferior, the sealing effect is not sufficient, so it is used when plasma is irradiated under vacuum. could not. Further, since the silicone elastomer has a large gas permeation amount, there is a problem that it cannot be used when plasma irradiation is performed in a vacuum state.
【０００５】本発明の目的は、耐熱性、低ガス透過性、
及び、酸素やＣＦ4 雰囲気下等でプラズマ照射されても
安定性を有し、発塵しない半導体製造装置用シールを提
供することである。The objects of the present invention are heat resistance, low gas permeability,
Another object of the present invention is to provide a seal for a semiconductor manufacturing apparatus, which is stable even when it is irradiated with plasma under an atmosphere of oxygen or CF 4 and does not generate dust.
【０００６】[0006]
【課題を解決するための手段および作用】本発明者は、
上記課題を解決すべく鋭意検討した結果、ふっ素系エラ
ストマー１００重量部に対して、シリカ１〜５０重量
部、有機過酸化物１〜１０重量部からなる組成物からな
る半導体製造装置用シールであって、かつ、該半導体製
造装置用シール１００重量部に対して、金属元素を１重
量部以下、及び、カーボンブラックを１重量部以下にせ
しめ、かつ、該半導体製造装置用シールがボイドフリー
であることを特徴とする半導体製造装置用シールによっ
て解決される。Means and Actions for Solving the Problems
As a result of intensive studies to solve the above problems, it is a seal for a semiconductor manufacturing apparatus, which is composed of a composition of 1 to 50 parts by weight of silica and 1 to 10 parts by weight of organic peroxide with respect to 100 parts by weight of a fluorine-based elastomer. In addition, with respect to 100 parts by weight of the semiconductor manufacturing apparatus seal, the metal element is set to 1 part by weight or less and the carbon black is set to 1 part by weight or less, and the semiconductor manufacturing apparatus seal is void-free. This is solved by a seal for semiconductor manufacturing equipment, which is characterized in that
【０００７】本発明の半導体製造装置用シールが、酸素
やＣＦ4 雰囲気下等でのプラズマ照射に対して、安定性
を有する理由についての詳細なメカニズムは不明である
が、おそらく、配合されたシリカによって、プラズマ照
射で励起された酸素やＣＦ４ガスに対して、本発明で用
いられるふっ素系エラストマーが保護されるという遮蔽
効果（分子鎖切断の阻止）と、アミン架橋や、ポリオー
ル架橋のように受酸剤として金属化合物を必要としない
有機過酸化物で架橋したことと、金属元素及びカーボン
ブラックを低減させたこととの相乗効果が有効に作用し
たためと推測される。The detailed mechanism for the reason that the seal for semiconductor manufacturing equipment of the present invention has stability against plasma irradiation under oxygen or CF 4 atmosphere is unknown, but probably the compounded silica is used. Protects the fluorine-based elastomer used in the present invention from oxygen and CF4 gas excited by plasma irradiation (inhibition of molecular chain breakage), and has the same effect as amine cross-linking and polyol cross-linking. It is speculated that the synergistic effect of cross-linking with an organic peroxide that does not require a metal compound as an acid agent and the reduction of the metal element and carbon black worked effectively.
【０００８】次に、本発明に使用される材料について記
述する。ふっ素系エラストマーとしては、テトラフルオ
ロエチレン−パーフルオロアルキルエーテル共重合体、
ヘキサフルオロプロピレン−ビニリデンフルオライド共
重合体、ヘキサフルオロプロピレン−ビニリデンフルオ
ライド−テトラフルオロエチレン共重合体、テトラフル
オロエチレン−プロピレン共重合体等のシール材料とし
て通常用いられる公知のふっ素系エラストマーを用いる
ことができる。上記ふっ素系エラストマーは少なくとも
１種または２種以上を用いる。上記ふっ素系エラストマ
ーは、低発塵性の点から、テトラフルオロエチレン−パ
ーフルオロアルキルエーテル共重合体（アルキル基の炭
素は５個以下）、ヘキサフルオロプロピレン−ビニリデ
ンフルオライド共重合体、ヘキサフルオロプロピレン−
ビニリデンフルオライド−テトラフルオロエチレン共重
合体が好ましい。Next, the materials used in the present invention will be described. As the fluoroelastomer, a tetrafluoroethylene-perfluoroalkyl ether copolymer,
Hexafluoropropylene-vinylidene fluoride copolymer, hexafluoropropylene-vinylidene fluoride-tetrafluoroethylene copolymer, tetrafluoroethylene-propylene copolymer, etc. use a known fluorine-based elastomer usually used as a sealing material You can At least one type or two or more types of the above-mentioned fluorine-based elastomers are used. The fluorine-based elastomer is a tetrafluoroethylene-perfluoroalkyl ether copolymer (having 5 or less carbons in the alkyl group), a hexafluoropropylene-vinylidene fluoride copolymer, and hexafluoropropylene from the viewpoint of low dust emission. −
Vinylidene fluoride-tetrafluoroethylene copolymer is preferred.
【０００９】シリカとしては、公知の湿式シリカ、乾式
シリカのどちらも用いることができ、また、両者の併用
系でもよいが、湿式シリカは水分を含んでいるために、
乾式シリカの方が好ましく、特に、半導体製造装置の加
工室内を真空状態にして使用する半導体製造装置用シー
ルには、乾式シリカの方が好ましい。シリカの平均粒子
径は、１〜５０μｍの範囲内程度のものを用いればよい
が、好ましくは１０〜４０μｍの範囲内のものを用い
る。市販品のシリカとしては、日本アエルジル株式会社
製アエロジルＲ９７２、シオノギ製薬社製カープレクッ
スＣＳ−５等が挙げられる。シリカは、ふっ素系エラス
トマー１００重量部に対して、１〜５０重量部、好まし
くは５〜３０重量部用いる。シリカの配合量が１重量部
未満であると、エラストマーの分解が促進され発塵が生
じやすい傾向にある。また、５０重量部よりも多いと発
塵が生じやすくなる傾向にある。As the silica, both known wet silica and dry silica can be used, and a combination system of both may be used, but since wet silica contains water,
Dry silica is preferable, and dry silica is particularly preferable for a seal for a semiconductor manufacturing apparatus that is used in a vacuum state in a processing chamber of the semiconductor manufacturing apparatus. The average particle diameter of silica may be within the range of 1 to 50 μm, but is preferably within the range of 10 to 40 μm. Examples of commercially available silica include Aerosil R972 manufactured by Nippon Aergil Co., Ltd., Carprecus CS-5 manufactured by Shionogi Pharmaceutical Co., Ltd., and the like. Silica is used in an amount of 1 to 50 parts by weight, preferably 5 to 30 parts by weight, based on 100 parts by weight of the fluorine-based elastomer. When the content of silica is less than 1 part by weight, the decomposition of the elastomer is promoted and dust is liable to occur. Further, if the amount is more than 50 parts by weight, dust tends to occur.
【００１０】有機過酸化物としては、公知ものが使用で
き、例えば、ベンゾイルパーオキシド、１，１−ビス−
ｔ−ブチル−パーオキシ−３，３，５−トリメチルシク
ロヘキサン、１，１−ビス（ｔ−ブチルパーオキシ）シ
クロドデカン、ｎ−ブチル−４，４−ビス−ｔ−ブチル
パーオキシバレレート、ジクミルパーオキサイド、ｔ−
ブチルパーオキシベンゾエト、ジ−（ｔ−ブチル−オキ
シ）ｍ−ジ−イソプロピルベンゼン、２，５−ジメチル
−２，５−ジ−ｔ−ブチルパーオキシヘキサン、２，５
−ジメチル−２，５−ｔ−ブチルパーオキシヘキシン等
が挙げられる。有機過酸化物は、ふっ素系エラストマー
１００重量部に対して、有機過酸化物１〜１０重量部、
好ましくは１〜５重量部用いる。有機過酸化物１重量部
未満であると、十分な架橋がされず発塵が生じやすくな
る。また、１０重量部よりも多いと弾性に乏しくなるた
め、密閉性が悪くなる。Known organic peroxides can be used, for example, benzoyl peroxide and 1,1-bis-
t-butyl-peroxy-3,3,5-trimethylcyclohexane, 1,1-bis (t-butylperoxy) cyclododecane, n-butyl-4,4-bis-t-butylperoxyvalerate, dicumyl Peroxide, t-
Butyl peroxybenzoate, di- (t-butyl-oxy) m-di-isopropylbenzene, 2,5-dimethyl-2,5-di-t-butylperoxyhexane, 2,5
-Dimethyl-2,5-t-butylperoxyhexyne and the like can be mentioned. The organic peroxide is 1 to 10 parts by weight of organic peroxide with respect to 100 parts by weight of the fluorine-based elastomer,
Preferably 1 to 5 parts by weight is used. If the amount of the organic peroxide is less than 1 part by weight, sufficient cross-linking is not performed and dust is easily generated. Further, if the amount is more than 10 parts by weight, the elasticity becomes poor and the hermeticity becomes poor.
【００１１】また、本発明における半導体製造装置用シ
ールに用いる組成物には、良好な密閉性を得るために、
架橋助剤を添加することが好ましい。架橋助剤として
は、Ｎ，Ｎ´−ｍ−フェニルジマレイミド、トリアリル
シアヌレート、ジアリルフマレート、ジアリルフタレー
ト、テトラアリルオキシエタン、エチレングリコールア
クリレート、トリエチレングリコールアクリレート、ト
リエチレングリコールジメタアクリレート、テトラエチ
レングリコールジメタアクリレート、ポリエチレングリ
コールジメタアクリレート、トリメチロールプロペント
リメタアクリレート等が例示される。好ましい架橋助剤
としては、Ｎ，Ｎ´−ｍ−フェニルジマレイミド、トリ
アリルシアヌレートである。該架橋助剤の配合量は、テ
トラフルオロエチレン−パーフルオロアルキルエーテル
共重合体、ヘキサフルオロプロピレン−ビニリデンフル
オライド共重合体、ヘキサフルオロプロピレン−ビニリ
デンフルオライド−テトラフルオロエチレン共重合体の
少なくとも１種または２種以上の１００重量部に対し
て、架橋助剤０．１〜１０重量部、好ましくは０．５〜
５重量部である。Further, in order to obtain a good hermeticity, the composition used for the seal for semiconductor manufacturing equipment in the present invention is
It is preferable to add a crosslinking aid. As the cross-linking aid, N, N'-m-phenyldimaleimide, triallyl cyanurate, diallyl fumarate, diallyl phthalate, tetraallyloxyethane, ethylene glycol acrylate, triethylene glycol acrylate, triethylene glycol dimethacrylate, Examples include tetraethylene glycol dimethacrylate, polyethylene glycol dimethacrylate, trimethylolpropene trimethacrylate and the like. Preferred crosslinking aids are N, N'-m-phenyldimaleimide and triallyl cyanurate. The blending amount of the crosslinking aid is at least one of tetrafluoroethylene-perfluoroalkyl ether copolymer, hexafluoropropylene-vinylidene fluoride copolymer, hexafluoropropylene-vinylidene fluoride-tetrafluoroethylene copolymer. Alternatively, 0.1 to 10 parts by weight, preferably 0.5 to 10 parts by weight of a crosslinking aid, relative to 100 parts by weight of two or more kinds.
5 parts by weight.
【００１２】また、本発明における半導体製造装置用シ
ールは、該半導体製造装置用シール１００重量部に対し
て、金属元素を１重量部以下、及び、カーボンブラック
を１重量部以下にせしめる必要がある。金属元素が、金
属酸化物、有機金属化合物等の状態である場合には、こ
れらの化合物中の金属元素のみの重量に換算して該金属
元素の重量を１重量部以下とする。本発明における金属
元素とは、常温、常圧で金属的性質を示す通常の金属で
ある。該半導体製造装置用シール１００重量部に対し
て、金属元素、または、カーボンブラックが１重量部よ
りも多いと発塵が生じやすくなる傾向にある。In addition, the semiconductor manufacturing apparatus seal of the present invention needs to have a metal element content of 1 part by weight or less and a carbon black content of 1 part by weight or less with respect to 100 parts by weight of the semiconductor manufacturing apparatus seal. . When the metal element is in the state of a metal oxide, an organometallic compound, or the like, the weight of the metal element is 1 part by weight or less in terms of the weight of only the metal element in these compounds. The metallic element in the present invention is an ordinary metal that exhibits metallic properties at room temperature and atmospheric pressure. If the amount of the metal element or carbon black is more than 1 part by weight with respect to 100 parts by weight of the seal for a semiconductor manufacturing apparatus, dust tends to easily occur.
【００１３】本発明における半導体製造装置用シール
は、ボイドフリーでなければならない。該シールにボイ
ドがあると、圧縮永久歪みが劣るため、密封性の問題が
生じ、また、ガス透過性にも問題が生じるため、真空状
態下でプラズマ照射するときには使用できないという問
題が生じる。なお、本発明における半導体製造装置用シ
ールは、切断断面を倍率１０倍の拡大手段で観察してボ
イドを検出しなければ「ボイドフリーの状態」として判
定してよい。The semiconductor manufacturing apparatus seal of the present invention must be void-free. When the seal has a void, the compression set is inferior, which causes a problem of hermeticity and also a problem of gas permeability, which causes a problem that it cannot be used when plasma irradiation is performed in a vacuum state. The semiconductor manufacturing apparatus seal according to the present invention may be determined to be in a "void-free state" unless a void is detected by observing the cut cross section with a magnifying means having a magnification of 10 times.
【００１４】本発明における半導体製造装置用シールに
用いる組成物は、圧縮成型、押出成型等の公知の方法に
より成型し、公知の方法にて架橋を施して半導体製造装
置用シールとすればよい。The composition used for the seal for semiconductor manufacturing equipment in the present invention may be molded by a known method such as compression molding or extrusion molding, and may be crosslinked by a known method to obtain a seal for semiconductor manufacturing equipment.
【００１５】（実施例１〜３）後記表１に示す組成の半
導体製造装置用シール用組成物を１７５℃で１０分間、
圧縮成型架橋した後、オーブン室内で２００℃で４時間
の２次架橋を行ないＯリング（断面径３．５ｍｍ、Ｏリ
ングの内径２５ｍｍ）を作成した。(Examples 1 to 3) Sealing compositions for semiconductor manufacturing equipment having the compositions shown in Table 1 below were stored at 175 ° C. for 10 minutes.
After compression molding and cross-linking, secondary cross-linking was performed in an oven chamber at 200 ° C. for 4 hours to prepare an O-ring (cross-sectional diameter: 3.5 mm, O-ring inner diameter: 25 mm).
【００１６】[0016]
【表１】 [Table 1]
【００１７】上記のＯリングにつき、切断断面を倍率１
０倍の拡大鏡でボイドの有無を観察した。また、該Ｏリ
ングにつきプラズマ照射試験を行い、プラズマ照射前後
のシールの重量変化量および発塵の有無を調べた。発塵
の有無は、プラズマ照射後のＯリングの表面を指先で軽
く撫ぜ、指先に付着した異物を目視による観察し、指先
に付着物が見られた場合には、発塵有、見られない場合
は、発塵無とした。なお、プラズマ照射試験は以下の条
件下で行った。 プラズマ照射試験の条件 プラズマ照射雰囲気：酸素プラズマまたはＣＦ４ プラ
ズマ 放電電力：１５０Ｗ 周波数：１３．５６ＭＨｚ 圧力：４０Ｐａ 照射時間：３時間The cross section of the above O-ring is magnified 1
The presence or absence of voids was observed with a 0 × magnifying glass. Further, a plasma irradiation test was conducted on the O-ring to examine the weight change amount of the seal before and after plasma irradiation and the presence or absence of dust generation. For the presence or absence of dust generation, lightly pat the surface of the O-ring after plasma irradiation with a fingertip and visually observe foreign matter adhering to the fingertip. If there is an adhering matter on the fingertip, dust is present or not. In that case, no dust was generated. The plasma irradiation test was conducted under the following conditions. Conditions of plasma irradiation test Plasma irradiation atmosphere: oxygen plasma or CF4 plasma Discharge power: 150 W Frequency: 13.56 MHz Pressure: 40 Pa Irradiation time: 3 hours
【００１８】（比較例１〜３）表１で示す割合で添加す
る以外は、上記実施例と同様にしてＯリングを作製し、
実施例と同じ条件でプラズマ照射試験を行った。(Comparative Examples 1 to 3) O-rings were produced in the same manner as in the above-mentioned Examples except that the ratios shown in Table 1 were added.
A plasma irradiation test was conducted under the same conditions as in the examples.
【００１９】[0019]
【効果】本発明における半導体製造装置用シールは、耐
熱性、耐ガス透過性に優れている。また、酸素やＣＦ4
雰囲気下等でプラズマ照射されても優れた安定性を有す
るので、該シールから劣化によって発生する異物が半導
体基板のシリコンウエハーに付着せず、異物付着による
不良半導体製品が激減する。また、従来、シールから発
塵が多く交換が頻繁であったシールの代わりに本発明の
半導体製造装置用シールを用いることで交換の頻度が少
なくなり、メンテナンスが軽減する。さらには、シリコ
ーンゴム系のシールでは不向きであった高真空雰囲気下
の半導体製造装置のシールとして適用することができ、
これにより、耐ガス透過性が向上すると同時にシールの
交換頻度が少なくなる。[Effect] The seal for semiconductor manufacturing equipment of the present invention is excellent in heat resistance and gas permeation resistance. Also, oxygen and CF 4
Since it has excellent stability even when it is irradiated with plasma under an atmosphere or the like, foreign substances generated by deterioration from the seal do not adhere to the silicon wafer of the semiconductor substrate, and defective semiconductor products due to foreign substance adhesion are drastically reduced. Further, by using the seal for a semiconductor manufacturing apparatus of the present invention in place of the seal that has conventionally been frequently replaced with a lot of dust generated from the seal, the frequency of replacement is reduced and maintenance is reduced. Furthermore, it can be applied as a seal for semiconductor manufacturing equipment in a high vacuum atmosphere, which was not suitable for silicone rubber-based seals.
This improves gas permeation resistance and reduces the frequency of replacement of the seal.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｃ０８Ｌ 27/18 27/20 Ｈ０１Ｌ 21/302 Ｂ 9277−4Ｍ ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical indication C08L 27/18 27/20 H01L 21/302 B 9277-4M
Claims (4)
して、シリカ１〜５０重量部、有機過酸化物１〜１０重
量部からなる組成物からなる半導体製造装置用シールで
あって、かつ、該半導体製造装置用シール１００重量部
に対して、金属元素を１重量部以下、及び、カーボンブ
ラックを１重量部以下にせしめ、かつ、該半導体製造装
置用シールがボイドフリーであることを特徴とする半導
体製造装置用シール。1. A seal for a semiconductor manufacturing apparatus, which comprises a composition comprising 1 to 50 parts by weight of silica and 1 to 10 parts by weight of organic peroxide with respect to 100 parts by weight of a fluorine-based elastomer, and the semiconductor. A semiconductor characterized in that the metal element content is 1 part by weight or less and the carbon black content is 1 part by weight or less with respect to 100 parts by weight of the manufacturing equipment seal, and the semiconductor manufacturing equipment seal is void-free. Seal for manufacturing equipment.
オロエチレン−パーフルオロアルキルエーテル共重合
体、ヘキサフルオロプロピレン−ビニリデンフルオライ
ド共重合体、ヘキサフルオロプロピレン−ビニリデンフ
ルオライド−テトラフルオロエチレン共重合体の少なく
とも１種または２種以上である特許請求の範囲第１項記
載の半導体製造装置用シール。2. The fluorine-based elastomer is at least one of a tetrafluoroethylene-perfluoroalkyl ether copolymer, a hexafluoropropylene-vinylidene fluoride copolymer, and a hexafluoropropylene-vinylidene fluoride-tetrafluoroethylene copolymer. The seal for a semiconductor manufacturing apparatus according to claim 1, wherein the seal is one or more kinds.
に対して、架橋助剤を０．１〜１０重量部更に含有せし
めてなる特許請求の範囲第１項または第２項記載の半導
体製造装置用シール。3. The seal for a semiconductor manufacturing apparatus according to claim 1, further comprising 0.1 to 10 parts by weight of a crosslinking aid with respect to 100 parts by weight of the fluorine-based elastomer. .
の範囲第１項乃至第３項記載の半導体製造装置用シー
ル。4. The seal for a semiconductor manufacturing apparatus according to claim 1, wherein the silica is dry silica.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11639893A JP2858198B2 (en) | 1993-04-19 | 1993-04-19 | Semiconductor manufacturing equipment seal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11639893A JP2858198B2 (en) | 1993-04-19 | 1993-04-19 | Semiconductor manufacturing equipment seal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06302527A true JPH06302527A (en) | 1994-10-28 |
| JP2858198B2 JP2858198B2 (en) | 1999-02-17 |
Family
ID=14686060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11639893A Expired - Lifetime JP2858198B2 (en) | 1993-04-19 | 1993-04-19 | Semiconductor manufacturing equipment seal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2858198B2 (en) |
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