JPH06295873A - Trap unit for vapor phase reaction system - Google Patents

Abstract

PURPOSE:To provide a trap unit for a vapor phase reaction system which can enhance productivity by enhancing the capturing efficiency, prolonging the service life, and lowering the maintenance frequency. CONSTITUTION:A small diameter ring disc 6 made of a thin plate and a large diameter ring disc 7 are laminated through spacers 8, 9 within an enclosure 2 of a trap 1 for vapor phase reaction system thus producing a double tubular laminate structure 10. Gas is introduced through an inlet opening 11 to the outside of the laminate structure 10 and passes through the gap of the large diameter disc 7. The gas also passes through the gap of the small diameter disc 6 and introduced from the inside of the laminate structure 10 to an outlet opening 12.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION The present invention relates to a trap device for a gas phase reactor.

[0002]

2. Description of the Related Art For example, in a gas phase reaction apparatus such as a CVD apparatus for forming a CVD film on a semiconductor wafer in a semiconductor device manufacturing process, the exhaust gas contains a reaction gas. Therefore, various trap devices for gas phase reaction apparatuses have been conventionally used for the purpose of trapping such reaction gas and reducing the reaction gas introduced into a vacuum pump for vacuum evacuation.

As a conventional trap device for a gas phase reaction apparatus, for example, as shown in Japanese Patent Publication No. Sho 62-20841, a cooling mechanism is provided in an airtight container, and a baffle plate is provided in the airtight container as a series. There are many arrangements in which the gas flow path length is increased to improve the cooling efficiency and the collection efficiency.

[0004]

However, even in the conventional trap device for a gas phase reaction apparatus as described above, the trapping efficiency is not sufficient, and the trapping efficiency is high.
There has been a demand for the development of a trap device for a gas phase reaction device, which can prolong the life of the device and reduce the frequency of maintenance, thereby improving the productivity.

The present invention has been made in response to such a conventional situation, and has a higher collection efficiency as compared with the conventional one, and the productivity is improved by prolonging the life of the apparatus and reducing the maintenance frequency. It is intended to provide a trap device for a gas phase reaction device which can be used.

[0006]

That is, in the trap apparatus for a gas phase reaction apparatus of the present invention, an airtightly configured outer shell container and a large number of plate-like bodies are laminated with a gap serving as a gas flow path therebetween. A laminated structure arranged in such a manner as to partition the inside of the outer shell container, and one space in the outer shell container partitioned by the laminated structure. And a gas lead-out portion for leading out gas from the other space partitioned by the laminated structure in the outer shell container.

[0007]

According to a close examination by the present inventors, for example, in collecting the reaction products in the exhaust gas of the CVD apparatus, the reaction gas flows into the trap device, so that the portion where the reaction gas collides first is It was found that the reaction product adheres to and collects on the contacted portion due to the diffusion effect, and cooling is not always an effective collecting means.

Therefore, in the trap apparatus for a gas phase reaction device of the present invention, a laminated structure constructed by arranging a large number of plate-like bodies so as to be laminated with a gap between them is arranged in an outer shell container,
By circulating the exhaust gas through the gap of the laminated structure, the reaction product is attached to the surface of the plate-like body and the reaction gas is collected by effectively utilizing the effect of collision and diffusion of the exhaust gas. Thereby, the collection efficiency can be improved as compared with the conventional case.

It is preferable that the plate-like bodies are formed, for example, in an annular shape and arranged so that the gap between the plate-like bodies is, for example, 0.1 to 1 mm. From the outer side to the inner side of the plate-like bodies,
Alternatively, the gas is configured to flow from the inner portion to the outer portion. The space between the plate-shaped bodies is configured to be held by, for example, providing a convex portion on the plate surface of the plate-shaped body by pressing, and bringing the convex portion into contact with the plate surface of the adjacent plate-shaped body.

Further, a cooling mechanism is provided in the outer shell container,
A plate having a large number of through holes may be provided between the laminated structure and the gas introduction part.

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the trap apparatus for a gas phase reaction device of the present invention will be described below with reference to the drawings.

As shown in FIG. 1, a trap apparatus 1 for a gas phase reaction apparatus according to this embodiment includes a hollow cylindrical outer shell container 2 which can be hermetically closed inside. At the bottom of the outer shell container 2, a lid plate 4 that is removable via an O-ring 3 for hermetically sealing is fixed by a screw 5.

Further, in the outer shell container 2, a thin disk-shaped disc (having an outer diameter of 57 mm and an inner diameter of 52 mm in the present embodiment) 6 formed in a ring shape and having a thickness of, for example, 0.1 to 1.0 mm.
A large-diameter disk (110 mm outer diameter, 94 mm inner diameter in the present embodiment) 7 having a larger diameter than the small-diameter disk 6 is laminated via a spacer 8 and a spacer 9, respectively, to form a double-layered laminated structure. A body 10 is arranged, and an inlet opening 11 is provided in a side wall portion of the outer shell container 2 so as to introduce a gas into an outer portion of the laminated structure 10.
However, an outlet opening 12 is provided in the ceiling portion of the outer shell container 2 so as to discharge the gas from the inside of the laminated structure 10.

As shown in FIG. 2, in the laminated structure 10, the small diameter disks 6 and the spacers 8 having a predetermined thickness are alternately passed through a plurality of, for example, three rods 13, and the small diameter disks 6 and the small diameter disks 6 are provided. And the spacer 8
And a cylindrical body in which a large-diameter disk 7 and a spacer 9 are similarly laminated with a rod 13 as a support body are concentrically arranged. It is a thing.

The upper and lower ends of the laminated structure 10 and the inner wall of the outer shell container 2 are hermetically closed.
As indicated by the arrow in FIG. 1, the gas introduced from the inlet opening 11 to the outside of the laminated structure 10 of the outer shell container 2 passes through the gaps between the large-diameter discs 7 and the gaps between the small-diameter discs 6. Through the outlet opening 1 from the inside of the laminated structure 10
2 is configured to be derived.

The trap apparatus 1 for the gas phase reaction apparatus of this embodiment having the above-described structure is provided in the exhaust system of a vertical CVD apparatus as shown in FIG. 3, for example.

The vertical CVD apparatus is provided with a reaction tube (process tube) 41 made of, for example, quartz in a cylindrical shape.
It is arranged almost vertically, and a cylindrical heater 42 and a heat insulating material are provided so as to surround the reaction tube 41.
Further, a reaction gas introduction pipe 43 and an exhaust pipe 44 for introducing and exhausting a predetermined reaction gas are connected to the upper and lower portions of the reaction pipe 41, and the exhaust pipe 44 has a gas phase reaction. The device trap device 1 and the vacuum pump 45 are inserted.

Further, below the reaction tube 41, a boat elevator 46 which is vertically movable is arranged as a transfer mechanism. A heat-retaining cylinder 47 is provided on the boat elevator 46. The heat-retaining cylinder 47 supports a wafer boat 49 on which a large number of semiconductor wafers 48 are stacked so as to be stacked at intervals. It is configured to be possible. The wafer elevator 4 is used by the boat elevator 46.
The semiconductor wafer 48 placed on the substrate 9 is loaded and unloaded into the reaction tube 41 from the lower opening of the reaction tube 41.

In the vertical heat treatment apparatus having the above structure, the heater 4
2, the inside of the reaction tube 41 is preheated to a predetermined temperature, for example, about several hundreds of degrees, and the boat elevator 46 is raised so that the semiconductor wafer 48 mounted on the wafer boat 49 is not attached to the inner wall of the reaction tube 41. It is loaded into the reaction tube 41 by contact. Then, by introducing a predetermined reaction gas into the reaction tube 41 from the reaction gas introduction tube 43 and exhausting the gas from the exhaust tube 44 by the vacuum pump 45, the reaction gas is circulated in the reaction tube 41 and the surface of the semiconductor wafer 48 is exposed. A CVD film is formed.

At this time, the exhaust gas containing the unreacted reaction gas that has not completely reacted in the reaction pipe 41 flows into the exhaust pipe 44. Then, as shown in FIG. 1, the exhaust gas flows into the outer shell container 2 through the inlet opening 11 of the trap for a gas phase reaction device 1, passes through the gap between the large-diameter disks 7, and has a smaller diameter. Through the gap between the disks 6, it is led out from the inside of the laminated structure 10 to the outlet opening 12. In this process, when passing through the gap between the large-diameter discs 7, a reaction occurs due to the effect of the collision and diffusion described above, and a reaction product adheres to the surface of the large-diameter disc 7 and further passes through the gap between the small-diameter discs 6. The reaction occurs and the reaction product becomes a small-diameter disk 6.
The unreacted reaction gas in the exhaust gas that adheres to the surface is removed.

Immediately after the laminated structure 10 is mounted in the outer shell container 2 and the reactants are not attached to the large-diameter disk 7 and the small-diameter disk 6, the laminated structure 10 is removed from the inlet opening 11. Most of the exhaust gas that has flowed into the shell container 2 is led out to the outlet opening 12 through the gap of the portion of the laminated structure 10 facing the inlet opening 11 as shown in FIG. 1.

However, after a certain amount of time has passed, reaction products gradually adhere to the exhaust gas flow portion of the laminated structure 10, and as shown in FIG. When the gap (and the gap between the small-diameter disks 6) is closed, the exhaust gas flowing into the outer shell container 2 flows through the gap around the closed portion as indicated by the arrow in the figure. become. As a result, due to the attachment of the reactant, the exhaust gas flow portion of the laminated structure 10 gradually changes, and finally the reactant attaches to the whole.
Therefore, the laminated structure 10 can be effectively used and can be used for a period according to the size (surface area) of the laminated structure 10 while keeping the trapping ability constant.

Therefore, if the size of the laminated structure 10 is set in accordance with, for example, the maintenance cycle of other parts of the vertical heat treatment apparatus, the collecting ability can be reliably maintained for a certain period.

By using the vertical heat treatment apparatus having the above structure, reaction gas SiH ₂ Cl ₂ (flow rate 100 SCCM),
The reaction gas NH ₃ (flow rate 1000 SCCM) is flown to actually form the SiN film, and the trap device 1 for the vapor phase reaction device is formed.
It was confirmed that a collection efficiency of 70% was obtained, and a higher collection efficiency was obtained as compared with the conventional trap device of 50%. Also, as described above, it was possible to confirm that the reaction product gradually adhered to the entire laminated structure 10 depending on the usage time.

If the gap between the large-diameter disc 7 and the small-diameter disc 6 is too narrow, the conductance is increased, which is not preferable in terms of exhaust efficiency. On the other hand, if it is too wide, the collection efficiency is lowered. . For this reason, when the experiment was repeated while changing the width of the gap, such a gap was set to preferably about 0.1 to 1 mm, more preferably 0.3 to 0.6 mm, and the remarkable conductance was obtained. It was possible to obtain a practical level of trapping effect without incurring an increase in.

Next, another embodiment will be described.

Trap device 1 for gas phase reactor shown in FIG.
In FIG. 6A, a hollow cylindrical cooling water circulation mechanism 50 is provided inside the large diameter disc 7 instead of the small diameter disc 6 as a cooling mechanism so that cooling water or the like can be circulated inside. In the case of this embodiment, the upper end of the cooling water circulation mechanism 50 and the inner wall of the outer shell container 2 are hermetically closed, and the gas introduced into the outer shell container 2 through the inlet opening 11 is a large-diameter disk. After passing through the gap between 7, the cooling water circulation mechanism 50
Along the outside of the cooling water circulation mechanism 50, passes through between the lower end of the cooling water circulation mechanism 50 and the cover plate 4, enters the inside of the cooling water circulation mechanism 50, rises there, and is led out from the outlet opening 12. Is configured.

A trap device 1 for such a gas phase reactor
In a, depending on the type of reaction product, the collection effect can be improved by cooling.

Trap apparatus 1 for gas phase reactor shown in FIG.
b shows an example in which the laminated structure 10 is constituted only by the large-diameter disk 7 without disposing the small-diameter disk 6. In the embodiment shown in FIG. 1, most of the reaction products adhere to the outer large-diameter disk 7, so that even if the laminated structure 10 is one layer, the collection efficiency will be significantly reduced. In addition, the structure can be simplified and the manufacturing cost can be reduced.

In order to increase the contact area of the laminated structure 10, as shown in FIG. 7, a disc 70 having a notch or the like formed in the peripheral portion is used, or as shown in FIG. 8, discs having different diameters are used. A laminated structure 80 or the like having a shape in which the outer peripheral shape has irregularities may be used by stacking.

FIG. 9 and FIG. 10 show the structure of the main part of still another embodiment. In this embodiment, a disk 9 is used instead of the spacers 8 and 9 in the above-mentioned embodiments.
A plurality of (four in this embodiment) protrusions 91 are provided on the plate surface of 0, and the protrusions 91 are configured to keep the discs 90 at a predetermined interval. Is configured to be supported by four shafts 92. In addition, in FIG. 9 and FIG.
Is a base, 94 is a support member for supporting the uppermost portion of the disk 90, and 95 is a nut for fixing the support member 94.

The convex portion 91 is formed by pressing the disk 9
If it is molded at the same time as 0 punching, it can be formed without increasing the number of steps.

In the embodiment constructed as described above, it is not necessary to remove or insert the spacers 8 and 9 when, for example, removing and cleaning the disc 90 or assembling these discs 90 again The operation of can be performed easily.

In the example shown in FIGS. 9 and 10, the inner edge of the disc 90 is supported by the four shafts 92, but as shown in FIG.
The outer peripheral edge portion of 0 may be supported by a plurality of, for example, four shafts 92. Further, as shown in FIG. 12, an opening may be provided in the convex portion 91, and as shown in FIG. 13, a part of the outer peripheral edge portion of the disc 90 is bent to provide the convex portion 91a. Or, as shown in FIG.
The convex portion 91b may be provided by bending a part of the inner edge of the disc 90.

FIG. 15 shows still another embodiment. In the trap apparatus 1c for a gas phase reaction apparatus of this embodiment, a large number of through holes 100 are provided between the inlet opening 11 and the laminated structure 10. The plate body (punching metal) 101 having the is arranged. In the embodiment configured as described above, first, the reaction product adheres to the plate body 101, so that the reaction product can be suppressed from adhering to the laminated structure 10, and the plate structure 101 is used for a longer period of time. This makes it possible to reduce maintenance frequency and improve productivity.

In each of the above-mentioned embodiments, the embodiments in which the present invention is applied to the vertical CVD apparatus have been described, but the present invention is not limited to such embodiments, and other CVs are used.
Of course, it can be applied to the D apparatus or other gas phase reaction apparatus. Further, for example, the shape, structure, etc. of each part of the outer shell container 2, the laminated structure 10 or the like can be variously modified.

[0037]

As described above, according to the trap apparatus for a gas phase reaction apparatus of the present invention, the trapping efficiency is higher than that of the conventional apparatus, and the apparatus life is prolonged and the maintenance frequency is reduced. It is possible to improve the sex.

[Brief description of drawings]

FIG. 1 is a diagram showing the configuration of a trap device for a gas phase reaction apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram showing a configuration of main parts of the trap device for the gas phase reaction device of FIG.

FIG. 3 is a diagram showing a configuration of a vertical heat treatment apparatus in which a trap device for a gas phase reaction device is arranged.

FIG. 4 is a view for explaining the operation of the trap device for the gas phase reaction device of FIG. 1.

FIG. 5 is a diagram showing the configuration of a trap device for a gas phase reaction device according to another embodiment.

FIG. 6 is a diagram showing the configuration of a trap device for a gas phase reaction device according to another embodiment.

FIG. 7 is a diagram showing the configuration of a disc of another embodiment.

FIG. 8 is a diagram showing a configuration of a laminated structure of another example.

FIG. 9 is a diagram showing a configuration of a laminated structure of another example.

FIG. 10 is a diagram showing a configuration of a laminated structure of another example.

FIG. 11 is a diagram showing a configuration of a laminated structure of another example.

FIG. 12 is a diagram showing the configuration of a disc of another embodiment.

FIG. 13 is a diagram showing the configuration of a disc of another embodiment.

FIG. 14 is a diagram showing the configuration of a disc of another embodiment.

FIG. 15 is a diagram showing the configuration of a trap device for a gas phase reaction device according to another embodiment.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Trap device for gas phase reaction apparatus 2 Outer shell container 3 O-ring 4 Lid plate 5 Screw 6 Small diameter disk 7 Large diameter disk 8,9 Spacer 10 Laminated structure 11 Inlet opening 12 Outlet opening 13 Rod

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Osamu Yokokawa 1-24-1 Machiya, Shiroyama-cho, Tsukui-gun, Kanagawa Tokyo Electron Tohoku Co., Ltd. Sagami Business Office (72) Yoshitaka Okada Shiroyama-machi, Tsukui-gun, Kanagawa 1-24-41 Tokyo Electron Tohoku Co., Ltd. Sagami Business Office (72) Inventor Ichiro Nagasaki 7 Cuno Co., Ltd., 1 Iwaicho, Hodogaya-ku, Yokohama-shi, Kanagawa (72) Inventor Akira Hashimoto Hodogaya, Yokohama-shi, Kanagawa 7 Cuno Co., Ltd., 1 Iwai-cho, Tokyo

Claims (8)

[Claims] 1. An outer shell container configured in an airtight manner, and a plurality of plate-like bodies are arranged so as to be stacked with a gap serving as a gas flow path stacked, and the outer shell container is provided in the outer shell container. A laminated structure arranged to partition the inside, a gas introduction unit for introducing gas into one space partitioned by the laminated structure in the outer shell container, and in the outer shell container, A trap device for a gas phase reaction device, comprising: a gas lead-out portion for leading a gas from the other space partitioned by the laminated structure. 2. An airtight outer shell container and a plurality of annular plate-like bodies are arranged so as to be stacked with a gap serving as a gas flow path, and are arranged in the outer shell container. A laminated structure arranged so as to partition the inside of the shell container into an inner part and an outer part of the annular plate-like body, and gas introduction for introducing gas into the outer part of the plate-like body in the outer shell container And a gas lead-out portion for leading out gas from the inner portion of the plate-shaped body in the outer shell container. 3. A hermetically sealed outer shell container and a plurality of annular plate-like bodies are arranged so as to be stacked with a gap serving as a gas flow path therebetween, and are arranged in the outer shell container. A laminated structure arranged so as to partition the inside of the shell container into an inner part and an outer part of the annular plate-like body, and gas introduction for introducing gas into the inner part of the plate-like body in the outer shell container And a gas lead-out portion for leading out gas from the outside of the plate-shaped body in the outer shell container. 4. The trap device for a gas phase reaction device according to claim 1, wherein a cooling mechanism is provided in the outer shell container. 5. The gap between the plate-shaped bodies is 0.1 to 1 mm.
The trap device for a gas phase reaction device according to claim 1, wherein 6. A plate surface of the plate-shaped body is provided with a convex portion, and the space between the plate-shaped bodies is maintained by bringing the convex portion into contact with the plate surface of the adjacent plate-shaped body. The trap device for a gas phase reaction device according to claim 1, wherein the trap device is configured as follows. 7. The convex portion formed on the plate surface of the plate-shaped body,
The trap device for a gas phase reaction device according to claim 6, wherein the trap device is formed by press working. 8. A trap device for a gas phase reaction apparatus according to claim 1, wherein a plate body having a large number of through holes is provided between the laminated structure and the gas introducing portion. .