JPH0629411A - Method and apparatus for manufacturing semiconductor device - Google Patents

Abstract

PURPOSE:To accurately release only adsorption gas on the surface of an individual semiconductor substrate by detecting the rate of pressure in a degassing chamber during degassing of the individual semiconductor substrate, and completing the degassing when the rate of variations reaches a minimum. CONSTITUTION:A degassing chamber 6 of a degassing apparatus is connected with a vacuum pump 8 and a vacuum gauge 9, and heats a semiconductor substrate 30 using an infrared lamp 10 disposed on a wall surface of the upper surface of the degassing chamber 6. Hereby, any gas adsorbed by an oxide film surface on the semiconductor substrate 30 is released to increase pressure in the chamber, but since the amount of exhaustion of the vacuum pump 8 is larger than the amount of the released gas, the pressure in the chamber is decreased. In contrast, any gas adsorbed in the interior of the oxide film on the semiconductor substrate 3 is released to increase the pressure in the chamber and hence cancel the decrease of the pressure in the chamber, followed by substantially the unchanged pressure in the chamber. Accordingly, only adsorbed gas on the semiconductor substrate surface can accurately be released by completing the degassing process at the time the rate of variations of the pressure in the chamber changes from zero to a positive value.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to improvements in a degassing apparatus and a degassing method for an insulating film forming a wiring layer of a semiconductor device.

With the recent decrease in the temperature of the insulating film forming process,
Since the density of the insulating film is low, water adsorption and residual components of the insulating film raw material are likely to occur. For this reason,
Gas generated from the underlying insulating film in the step of forming the wiring layer causes a contact failure between the wiring layer and the insulating film and a contact resistance failure of the wiring layer.

Under the circumstances as described above, there is a demand for a degassing apparatus and method capable of degassing an insulating film underlying a wiring layer.

[0004]

2. Description of the Related Art A conventional degassing apparatus and a degassing method for heating a semiconductor substrate with a heater built in a mounting table and an assist gas supplied from the outside will be described in detail with reference to FIG.

FIG. 6 is a diagram showing a schematic structure of a conventional degassing apparatus. As shown in FIG. 6, the degassing chamber 26 of the conventional degassing device is connected to a vacuum pump 28 and a vacuum gauge 29,
A mounting table 27 on which the semiconductor substrate 30 is mounted is provided.

The stage 27 is heated by an assist gas supplied from the outside through a built-in heater 27a and a gas passage 27b penetrating the stage 27, and the temperature of the stage 27 of the semiconductor substrate 30 is set. The temperature is set to release the gas adsorbed on the surface of the insulating film.

This set temperature is set to a temperature corresponding to the standard semiconductor substrate 30, and any semiconductor substrate is processed in a standard processing time.

[0008]

In the method of manufacturing a semiconductor device using the conventional semiconductor device manufacturing apparatus described above, any semiconductor substrate undergoes standard processing at the set temperature corresponding to the standard semiconductor substrate. Since the treatment is performed for a time, there is a problem in that the surface of the semiconductor substrate is not sufficiently degassed. On the contrary, the gas is excessively degassed and contained in the insulating film of the semiconductor substrate. If even the gas is released, there is a problem that harmful gas is adsorbed inside the insulating film while moving from the degassing device to another device.

In view of the above situation, the present invention detects the variation rate of the room pressure in the degassing chamber during the degassing process of each semiconductor substrate, and completes the degassing when the variation rate becomes the minimum. Accordingly, it is an object of the present invention to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method capable of accurately degassing only the adsorption gas on the surface of each semiconductor substrate.

[0010]

In a degassing apparatus for a semiconductor device manufacturing apparatus according to the present invention, a degassing chamber connected to a vacuum pump and an instrument for measuring the internal pressure of the degassing chamber mounts a semiconductor substrate thereon. And a means for heating the semiconductor substrate on the wall surface of the degassing chamber or on the stage.

[0011]

That is, in the present invention, the degassing chamber is connected with a vacuum pump and an instrument for measuring the internal pressure of the degassing chamber, and the degassing chamber is provided with a stage for mounting a semiconductor substrate, Since the wall surface of the degassing chamber or the stage is equipped with means for heating the semiconductor substrate,
In the case where the heating means is an infrared lamp provided on the wall surface of the degassing chamber, when the semiconductor substrate is heated by supplying power to the infrared lamp as shown in FIG. As shown in b), when the temperature rises and reaches the set temperature, the power of the infrared lamp is reduced and the temperature of the semiconductor substrate is kept at the set temperature.

During the process of increasing the temperature of the semiconductor substrate, the gas adsorbed on the surface of the oxide film of the semiconductor substrate is released, so that the chamber pressure in the degassing chamber is rapidly increased as shown in FIG. 4 (a). Although it increases, when the temperature of the semiconductor substrate reaches the set temperature, the exhaust amount of the vacuum pump becomes larger than the released gas amount, and the room pressure decreases.

On the other hand, the gas adsorbed inside the oxide film of the semiconductor substrate is gradually released to increase the chamber internal pressure of the degassing chamber as shown in FIG. 4 (b). Therefore, since the indoor pressure is as shown in Fig. 4 (c), which is a combination of Fig. 4 (a) and Fig. 4 (b), the curve becomes almost horizontal, that is, the fluctuation rate of the indoor pressure changes from zero. If the degassing process is terminated at the point when it changes to a positive value, the gas adsorbed on the surface of the oxide film of the semiconductor substrate is almost completely released, and the gas adsorbed inside the oxide film is not released. It becomes possible to do.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT An embodiment of the present invention will be described in detail below with reference to FIGS. 1 is a diagram showing a schematic configuration of a semiconductor device manufacturing apparatus according to an embodiment of the present invention, FIG.
Is a first semiconductor device manufacturing apparatus according to an embodiment of the present invention.
FIG. 3 is a diagram showing a schematic structure of a degassing apparatus of the present invention, FIG. 3 is a diagram showing a schematic structure of a degassing apparatus of a second embodiment of the semiconductor device manufacturing apparatus according to the present invention, and FIG. 6 is a time chart showing a method for manufacturing a semiconductor device according to an embodiment of the present invention.

As shown in FIG. 1, a semiconductor device manufacturing apparatus according to an embodiment of the present invention comprises a degassing apparatus 1 for degassing an insulating film on a semiconductor substrate and a sputter for carrying out a sputtering process on the semiconductor substrate. An apparatus 2, an etching apparatus 3 for etching the semiconductor substrate 30, and a load lock chamber 4 for accommodating the semiconductor substrate 30 in a vacuum atmosphere. A transfer mechanism for accommodating the semiconductor substrate transfer mechanism in a vacuum atmosphere. Around the chamber 5, a plurality of gate valves 1a, 2a,
It is provided via 3a and 4a.

The degassing chamber 6 of the degassing apparatus of the first embodiment according to the present invention is connected to a vacuum pump 8 and a vacuum gauge 9 as shown in the figure, and a stage 7 for mounting a semiconductor substrate 30 thereon.
Is equipped with.

An infrared lamp 10 is provided on the upper wall surface of the degassing chamber 6, and infrared rays transmitted through a quartz window 11 provided on the wall surface are irradiated to the semiconductor substrate 30 to heat it.

A time chart showing a method of manufacturing a semiconductor device using such a degassing apparatus is as shown in FIG. 5, in which power is supplied to an infrared lamp as shown in FIG. 5 (a). When the semiconductor substrate is heated, the temperature of the semiconductor substrate rises as shown in FIG. 5 (b). Therefore, when the temperature reaches the set temperature, the power of the infrared lamp is lowered to keep the temperature of the semiconductor substrate at the set temperature.

When the semiconductor substrate is heated in this manner, the gas adsorbed on the surface of the oxide film of the semiconductor substrate is released, so that the room pressure rapidly increases during the rising process as shown in FIG. 5 (c). However, when the temperature of the semiconductor substrate reaches the set temperature, the exhaust amount of the vacuum pump becomes larger than the released gas amount, and the room pressure decreases.

On the other hand, the gas adsorbed inside the oxide film of the semiconductor substrate is gradually released to increase the room pressure of the degassing chamber, which is offset by the decrease in the room pressure. When the degassing process is terminated when the room pressure becomes almost constant and the curve becomes almost horizontal, that is, when the fluctuation rate of the room pressure changes from zero to positive, the oxide film on the semiconductor substrate The gas adsorbed on the surface of the oxide film is almost completely released, and the gas adsorbed inside the oxide film is not released.

The degassing chamber 16 of the degassing apparatus of the second embodiment according to the present invention is connected to the mass spectrometer 19 through the vacuum pump 18 and the differential evacuation chamber 20, and mounts the semiconductor substrate 30 thereon. It has a stand 17.

The stage 17 is heated by an assist gas supplied from the outside through a built-in heater 17a and a gas passage 17b penetrating the stage 17, and the temperature of the stage 17 depends on the semiconductor substrate 30 to be mounted. The temperature is set to release the gas adsorbed on the surface of the insulating film.

The set temperature is set to a temperature corresponding to the standard semiconductor substrate 30, but the processing time of each semiconductor substrate 30 is set to the degassing chamber 16 as described in the section of the action.
If it takes time for the fluctuation rate of the room pressure of to change from zero to positive, the gas adsorbed on the surface of the oxide film of the semiconductor substrate is almost completely released, and the gas adsorbed inside the oxide film is released. Can be prevented from being released.

[0024]

As is apparent from the above description, according to the present invention, the gas adsorbed on the surface of the semiconductor substrate can be degassed without excess or deficiency by using the degassing device having an extremely simple structure. It is possible to provide a semiconductor device manufacturing apparatus and a semiconductor device manufacturing method that have the advantage of being possible and can expect significant economic and reliability improvement effects.

[Brief description of drawings]

FIG. 1 is a diagram showing a schematic configuration of a semiconductor device manufacturing apparatus according to an embodiment of the present invention,

FIG. 2 is a diagram showing a schematic structure of a degassing apparatus of a first embodiment of a semiconductor device manufacturing apparatus according to the present invention,

FIG. 3 is a diagram showing a schematic structure of a degassing apparatus of a second embodiment of a semiconductor device manufacturing apparatus according to the present invention,

FIG. 4 is a diagram showing degassing characteristics of an oxide film of a semiconductor substrate,

FIG. 5 is a time chart showing a method for manufacturing a semiconductor device according to an embodiment of the present invention,

FIG. 6 is a view showing a schematic structure of a conventional degassing device,

[Explanation of symbols]

1 is a degassing device, 1a is a gate valve, 2 is a sputtering device, 2a is a gate valve, 3 is an etching device, 3a is a gate valve, 4 is a load lock chamber, 4a is a gate valve, 5
Is a transfer mechanism room, 6 and 16 are degassing chambers, 7 and 17 are mounts,
17a is a heater, 17b is a gas flow path, 8 and 18 are vacuum pumps, 9
Is a vacuum gauge, 19 is a mass spectrometer, 10 is an infrared lamp, 11 is a quartz window, 20 is a differential exhaust chamber, 30 is a semiconductor substrate,

Claims (5)

[Claims] 1. A degassing chamber (6), which is connected to a vacuum pump (8) and a vacuum gauge (9) and has a stage (7) for mounting a semiconductor substrate (30), A degassing apparatus comprising an infrared lamp (10) for heating the degassing chamber (6) through a quartz window (11) provided on the wall surface of (6). 2. A degassing chamber (16) connected to a mass spectrometer (19) through a vacuum pump (18) and a differential exhaust chamber (20).
Is equipped with a mounting table (17) on which the semiconductor substrate (30) is mounted, and the mounting table (17) has a heater (17a) built therein and supplies an assist gas from the outside. A degassing device comprising a gas flow path (17b) penetrating (17). 3. The degassing apparatus (1) according to claim 1 or 2 for degassing an insulating film of a semiconductor substrate, and a sputtering apparatus (2) for sputtering the semiconductor substrate.
And an etching apparatus for etching the semiconductor substrate
(3) a load lock chamber (4) for accommodating the semiconductor substrate in a vacuum atmosphere, and a plurality of load lock chambers (4) around a transfer mechanism chamber (5) for accommodating the semiconductor substrate transfer mechanism in a vacuum atmosphere. Gate valve
(1a, 2a, 3a, 4a) is provided via the semiconductor device manufacturing apparatus. 4. The degassing of the insulating film of the semiconductor substrate (30) is detected by the vacuum gauge (9) of the degassing device according to claim 1, and the vacuum is generated by the chamber pressure of the degassing chamber (6). A method for manufacturing a semiconductor device, comprising controlling a pump (8) to terminate degassing at a time point when the gas released from the surface of the semiconductor substrate (30) is degassed. 5. The degassing of an insulating film of the semiconductor substrate (30) is detected by the mass spectrometer (19) of the degassing apparatus according to claim 2 by an internal pressure of the degassing chamber (16). A method for manufacturing a semiconductor device, characterized in that the vacuum pump (18) is controlled to terminate degassing when the gas released from the surface of the semiconductor substrate (30) is degassed.