JPH06291217A - Heat dissipation type lead frame - Google Patents
Heat dissipation type lead frameInfo
- Publication number
- JPH06291217A JPH06291217A JP9552493A JP9552493A JPH06291217A JP H06291217 A JPH06291217 A JP H06291217A JP 9552493 A JP9552493 A JP 9552493A JP 9552493 A JP9552493 A JP 9552493A JP H06291217 A JPH06291217 A JP H06291217A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- lead frame
- heat dissipation
- thermal expansion
- expansion coefficient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Lead Frames For Integrated Circuits (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体素子の発熱を有効
的に放熱する熱放散型リードフレームに関し、特に、パ
ッケージ内の熱膨張の整合が図れ、パッケージの信頼性
を大幅に向上させる熱放散型リードフレームに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat-dissipating lead frame for effectively dissipating heat generated by a semiconductor element, and more particularly, to heat expansion matching in the package and greatly improving the reliability of the package. Mold lead frame.
【０００２】[0002]
【従来の技術】近年、ロジック系素子の高集積化，高速
化が進むなど、１〜数ｗ程度の発熱を生じる半導体素子
が次々に現れ、これを搭載するリードフレームにも放熱
性に対する要求が強まっている。2. Description of the Related Art In recent years, semiconductor devices that generate heat of about 1 to several watts have appeared one after another due to the progress of higher integration and higher speed of logic devices. I'm getting stronger.
【０００３】そこで、最近では、タブなしリードフレー
ムのインナーリードの先端に放熱板を貼付し、この放熱
板の一面に直接、半導体素子を搭載するようにした熱放
散型リードフレームが検討されている。この熱放散型リ
ードフレームは、半導体素子の発熱を放熱板を介してモ
ールドレジン、すなわち、パッケージ全体に伝熱して放
熱するようになっている。また、より放熱効果を高める
ために、リードフレームや放熱板の材質としてＭＦ２０
２，ＫＬＦ１２５等の銅材を使用することが主流になっ
ている。Therefore, recently, a heat-dissipating lead frame in which a heat dissipation plate is attached to the tips of the inner leads of the tabless lead frame and a semiconductor element is directly mounted on one surface of the heat dissipation plate has been studied. . In this heat dissipation type lead frame, the heat generated by the semiconductor element is transferred to the mold resin, that is, the entire package through the heat dissipation plate to dissipate the heat. In order to further enhance the heat radiation effect, the MF20 is used as the material of the lead frame and the heat radiation plate.
2, the use of copper materials such as KLF125 is the mainstream.
【０００４】しかし、このように熱放散型リードフレー
ムであっても、より高速、且つ、処理信号数の多い高級
ＬＳＩを搭載させると、以下のような問題が生じた。 (1) 半導体素子へのダメージをより少なくするために開
発された１０×１０-6／℃程度の低熱膨張のモールドレ
ジンより銅材の熱膨張の方が大きいため、パッケージ内
で熱膨張係数の整合が取れなくなり、素子に残留応力を
与えたり、モールドレジンにパッケージクラックとなる
残留応力を与え、パッケージの信頼性を低下させる。 (2) 前述したように処理信号数が多くなり、例えば、リ
ードフレームが２００ピン以上の微細、且つ、多ピンに
なると、加工上の問題からフレーム厚を小さくする必要
がある。このため、銅材であるピンの強度が大幅に低下
する。特に問題となるのは、パッケージの外にでるアウ
ターリードの強度であり、この強度が確保されないとア
ウターリードに上下左右方向のシフトが生じ、安定した
基板への実装が不可能となる。However, even in such a heat dissipation type lead frame, when a high-speed LSI having a higher speed and a larger number of processed signals is mounted, the following problems occur. (1) The thermal expansion coefficient of the copper material is larger than that of the mold resin with a low thermal expansion of about 10 × 10 -6 / ° C, which was developed to reduce the damage to the semiconductor element. Alignment is lost, residual stress is applied to the element, and residual stress that causes package cracks is applied to the mold resin, which lowers the reliability of the package. (2) As described above, when the number of processed signals is large and, for example, the lead frame is fine with 200 pins or more and has a large number of pins, it is necessary to reduce the frame thickness due to processing problems. Therefore, the strength of the pin made of the copper material is significantly reduced. A particular problem is the strength of the outer leads outside the package. If this strength is not ensured, the outer leads will shift in the vertical and horizontal directions, making stable mounting on the substrate impossible.
【０００５】レジンとの熱膨張との整合および強度の点
を考慮すると、リードフレームと放熱板をレジンの熱膨
張係数と略同等で、しかも強度が高い４２Ｎｉ合金から
構成することが最も好ましいが、４２Ｎｉ合金は熱伝導
率が小さく放熱効果に乏しいという放熱材料としては致
命的な欠点がある。Considering the matching with the thermal expansion of the resin and the strength, it is most preferable that the lead frame and the heat radiating plate are made of 42Ni alloy which has substantially the same thermal expansion coefficient as that of the resin and high strength. The 42Ni alloy has a fatal defect as a heat dissipation material that has a low thermal conductivity and a poor heat dissipation effect.
【０００６】そこで、４２Ｎｉ合金のリードフレームと
銅材の放熱板を組み合せた構造が、放熱効果に優れ、且
つ、リードフレームの強度が高い半導体装置として考え
られる。Therefore, a structure in which a lead frame made of 42Ni alloy and a heat radiation plate made of copper are combined is considered as a semiconductor device which is excellent in heat radiation effect and high in strength of the lead frame.
【０００７】[0007]
【発明が解決しようとする課題】しかし、上記のように
４２Ｎｉ合金のリードフレームと銅材の放熱板を組み合
わせたとしても、アウターリードの強度と放熱効果は十
分確保することができるが、両者の熱膨張の差が約９×
１０-6／℃と大きいため、熱による残留応力によってパ
ッケージクラック等を発生させ、パッケージの信頼性を
低下させる。また、製作段階において、リードフレーム
と放熱板を接着一体化する際、熱硬化性接着剤では約２
００℃程度で、また、熱可塑性接着剤では２００から４
００℃程度で加熱することになるが、このとき、リード
フレームと放熱板の間で熱膨張差が大きくなり、全体の
フレーム形状に反り等の大きな変形が生じる。However, even if the lead frame made of 42Ni alloy and the heat radiation plate made of copper are combined as described above, the strength and heat radiation effect of the outer lead can be sufficiently secured. The difference in thermal expansion is about 9x
Since it is as large as 10 −6 / ° C., residual stress due to heat causes package cracks and the like, which lowers the reliability of the package. In addition, when the lead frame and the heat sink are bonded and integrated at the manufacturing stage, about 2% of thermosetting adhesive is used.
At about 00 ° C, and from 200 to 4 for thermoplastic adhesives
Although heating is performed at about 00 ° C., at this time, the difference in thermal expansion between the lead frame and the heat radiating plate becomes large, and the entire frame shape is largely deformed such as warped.
【０００８】従って、本発明の目的はパッケージ構造と
したとき、各構成材料の熱膨張係数の整合が図れ、熱に
よる残留応力を抑えると共に、製作段階においてフレー
ム形状に変形が生じることがない熱放散型リードフレー
ムを提供することである。Therefore, the object of the present invention is to provide a package structure in which the coefficient of thermal expansion of each constituent material can be matched, the residual stress due to heat can be suppressed, and the heat dissipation which does not cause the deformation of the frame shape in the manufacturing stage. To provide a mold lead frame.
【０００９】[0009]
【課題を解決するための手段】本発明は上記問題点に鑑
み、パッケージ構造としたとき、各構成材料の熱膨張係
数の整合が図れ、熱による残留応力を抑えると共に、製
作段階においてフレーム形状に変形が生じるのを防ぐた
め、放熱板を熱伝導率１００Ｗ／ｍＫ以上、且つ、熱膨
張係数１０×１０-6／℃以下のセラミック板より構成し
た熱放散型リードフレームを提供するものである。In view of the above problems, the present invention has a package structure in which the thermal expansion coefficients of the respective constituent materials can be matched, the residual stress due to heat is suppressed, and the frame shape is changed in the manufacturing stage. In order to prevent deformation, a heat dissipation type lead frame is provided in which a heat dissipation plate is composed of a ceramic plate having a thermal conductivity of 100 W / mK or more and a thermal expansion coefficient of 10 × 10 −6 / ° C. or less.
【００１０】すなわち、タブなしリードフレームのイン
ナーリードの先端に、半導体素子を搭載するための所定
の厚さの放熱板を絶縁性接着層を介して一体化した熱放
散型リードフレームにおいて、放熱板として熱膨張係数
が５×１０-6／℃〜７×１０-6／℃と小さく、且つ、純
銅の半分程度の良好な熱伝導性の得られるＡｌＮ（チッ
化アルミ）セラミック板を利用している。That is, in a heat dissipation type lead frame in which a heat dissipation plate having a predetermined thickness for mounting a semiconductor element is integrated at the tip of the inner lead of the tabless lead frame via an insulating adhesive layer, the heat dissipation plate is used. Using an AlN (aluminum nitride) ceramic plate having a small thermal expansion coefficient of 5 × 10 −6 / ° C. to 7 × 10 −6 / ° C. and good thermal conductivity of about half that of pure copper There is.
【００１１】上記リードフレームは、４２Ｎｉ合金であ
り、熱膨張係数が８×１０-6／℃以下と放熱板の熱膨張
係数に近く、温度をかけた積層を行っても、両者に問題
となるような歪が差がほとんど生じることがない。The lead frame is made of 42Ni alloy and has a thermal expansion coefficient of 8 × 10 -6 / ° C. or less, which is close to the thermal expansion coefficient of the heat radiating plate. There is almost no difference in such distortion.
【００１２】[0012]
【実施例】以下、本発明の熱放散型リードフレームにつ
いて添付図面を参照しながら詳細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The heat dissipation type lead frame of the present invention will be described in detail below with reference to the accompanying drawings.
【００１３】図１には、本発明の熱放散型リードフレー
ムを適用した半導体装置の一実施例が示されている。こ
の半導体装置は、４２Ｎｉ合金から成るタブなしのリー
ドフレーム２と、これにポリイミド系熱可塑性接着剤３
を介して一体化された所定の厚さの放熱板４と、この放
熱板４の上面に素子固定接着剤７を介して接着された半
導体素子１と、半導体素子１とリードフレーム２のイン
ナーリードを接続するボンディングワイヤ６と、半導体
素子１，ボンディングワイヤ６，及びリードフレーム２
のボンディングワイヤ接続部を封止するモールドレジン
５より構成されている。FIG. 1 shows an embodiment of a semiconductor device to which the heat dissipation type lead frame of the present invention is applied. This semiconductor device comprises a lead frame 2 without a tab made of 42Ni alloy, and a polyimide-based thermoplastic adhesive 3 on the lead frame 2.
A heat sink 4 having a predetermined thickness integrated via the semiconductor chip 1, a semiconductor element 1 bonded to the upper surface of the heat sink 4 with an element fixing adhesive 7, an inner lead of the semiconductor element 1 and the lead frame 2. Bonding wire 6 for connecting the semiconductor element 1, the bonding wire 6, and the lead frame 2
It is composed of a mold resin 5 for sealing the bonding wire connection part.
【００１４】放熱板４は、ＡｌＮ（チッ化アルミ）を主
成分としたセラミック板より構成されている。The heat dissipation plate 4 is composed of a ceramic plate whose main component is AlN (aluminum nitride).
【００１５】以上の構成において、最も熱膨張係数の小
さいものは半導体素子１の３．５×１０-6／℃で、ま
た、最も大きいものは低熱膨張モールドレジン５の１０
×１０-6／℃であり、その差は約６．５×１０-6／℃で
ある。一方、従来の熱放散型リードフレームにあって
は、銅が約１７×１０-6／℃で半導体素子１との差が１
３．５×１０-6／℃であることから、本発明の熱放散型
リードフレームは従来に比べて、熱膨張の差を約５０％
以下に低減している。このため、パッケージ内の熱によ
る残留応力を大幅に低減することができる。構造解析の
結果では、２８角パッケージの標準サイズの場合、熱に
よる残留応力が約半分になることを確認した。In the above structure, the one having the smallest coefficient of thermal expansion is 3.5 × 10 −6 / ° C. of the semiconductor element 1, and the one having the largest coefficient is 10 of the low thermal expansion mold resin 5.
× 10 -6 / ° C, and the difference is about 6.5 × 10 -6 / ° C. On the other hand, in the conventional heat dissipation type lead frame, copper is about 17 × 10 −6 / ° C. and the difference from the semiconductor element 1 is 1
Since it is 3.5 × 10 −6 / ° C., the heat dissipation type lead frame of the present invention has a difference in thermal expansion of about 50% as compared with the conventional one.
It is reduced below. Therefore, residual stress due to heat in the package can be significantly reduced. As a result of the structural analysis, it was confirmed that the residual stress due to heat was reduced to about half in the case of the standard size of the 28-sided package.
【００１６】また、リードフレーム２の４２Ｎｉと放熱
板４のＡｌＮの熱膨張の差は、約１×１０-6／℃から２
×１０-6／℃程度であり、熱可塑性接着剤に比べて正常
度が非常に高く信頼性が高いが、接着に高温が必要とな
る欠点のあるポリイミド系接着剤３を用いても、熱によ
る残留歪の影響が殆どなくなる。この結果、良好なフレ
ーム形状を得ることができる。The difference in thermal expansion between 42Ni of the lead frame 2 and AlN of the heat sink 4 is about 1 × 10 -6 / ° C.
It is about × 10 -6 / ° C, which is much higher in normality and more reliable than a thermoplastic adhesive, but even if a polyimide-based adhesive 3 is used, which has the drawback of requiring high temperature for adhesion, The effect of residual strain due to is almost eliminated. As a result, a good frame shape can be obtained.
【００１７】尚、ＡｌＮとレジンとの密着性を更に向上
させる場合には、ＡｌＮの表面に金などを蒸着させる
か、或いは適当な接着剤もしくはプライマを全体もしく
は一部に塗布する，或いは表面に適当な粗さやロックホ
ール等を設けることによって対応することができる。In order to further improve the adhesion between AlN and the resin, gold or the like is vapor-deposited on the surface of AlN, or an appropriate adhesive or primer is applied to the whole or part of the surface, or the surface is coated. This can be dealt with by providing an appropriate roughness or a lock hole.
【００１８】図２には、本発明の第２の実施例として、
リードフレーム２と放熱板４を熱硬化性接着剤８を介し
て積層一体化した構成が示されている。この実施例にお
いても、熱による残留歪の影響をほとんどなくすことが
でき、第１の実施例と略同等の効果を得ることができ
る。FIG. 2 shows a second embodiment of the present invention.
A structure in which the lead frame 2 and the heat dissipation plate 4 are laminated and integrated via a thermosetting adhesive 8 is shown. Also in this embodiment, the influence of residual strain due to heat can be almost eliminated, and an effect substantially equivalent to that of the first embodiment can be obtained.
【００１９】図３には、本発明の第３の実施例として、
放熱板４のリードフレーム２と反対側の面がモールドレ
ジン５より露出させた構成が示されている。この実施例
の場合、前述した第１，及び第２の実施例に加えて放熱
板４を露出させている分だけ放熱性を高めることができ
る。FIG. 3 shows a third embodiment of the present invention.
The structure is shown in which the surface of the heat dissipation plate 4 opposite to the lead frame 2 is exposed from the mold resin 5. In the case of this embodiment, in addition to the above-described first and second embodiments, the heat radiation performance can be improved by the amount that the heat radiation plate 4 is exposed.
【００２０】図４には、本発明の第４の実施例として、
ＡｌＮ放熱板４にフィン４ａを形成した構成が示されて
いる。この実施例では、強制対流によってより大きな放
熱効果を得ることができ、また、図５に示すように、フ
ィン４ａをモールドレジン５より突出させると更にその
効果を高めることができる。FIG. 4 shows a fourth embodiment of the present invention.
A structure in which fins 4a are formed on the AlN heat dissipation plate 4 is shown. In this embodiment, a greater heat dissipation effect can be obtained by the forced convection, and as shown in FIG. 5, the effect can be further enhanced by projecting the fin 4a from the mold resin 5.
【００２１】[0021]
【発明の効果】以上説明したように、本発明の熱放散型
リードフレームによると、放熱板を熱伝導率１００Ｗ／
ｍＫ以上、且つ、熱膨張係数１０×１０-6／℃以下のセ
ラミック板より構成したため、パッケージ構造としたと
き、各構成材料の熱膨張係数の整合が図れ、熱による残
留応力を抑えることができ、且つ、製造時にフレーム形
状に変形が生じるのを防ぐことができる。As described above, according to the heat dissipating lead frame of the present invention, the heat dissipation plate has a heat conductivity of 100 W /
Since it is composed of a ceramic plate with a coefficient of thermal expansion of mK or more and a coefficient of thermal expansion of 10 × 10 −6 / ° C. or less, the coefficient of thermal expansion of each constituent material can be matched in a package structure, and residual stress due to heat can be suppressed. Moreover, it is possible to prevent the frame shape from being deformed during manufacturing.
【００２２】更に具体的には、以下の効果を奏すること
ができる。 (1) 従来の銅の熱放散型リードフレームに比べて、熱膨
張差を約半分にすることができ、熱による残留応力を約
半分に抑えることができる。この結果、半田リフロー等
の信頼性が大幅に向上する。 (2) 放熱性に劣る４２Ｎｉ合金フレームを使用しても、
ＡｌＮ放熱板の使用によりパッケージ全体の放熱性を高
めることができる。４２Ｎｉは銅系に比べ非常に材料強
度が大きいので、ピン幅が０．１ｍｍ程度と小さくなっ
ても、良好な強度を保つことができ、特に、極細ピン化
の必要な超多ピンパッケージでも十分な強度を有するア
ウターリードを得ることができる。 (3) ＡｌＮは同等に比べ、約１／３程度の比重であるの
で、特に厚さの大きい放熱板を対象にする場合、全体の
重量を大幅に低減することができる。この結果、基板実
装の際にパッケージのチャックミス等が大幅に低減でき
る。More specifically, the following effects can be obtained. (1) Compared with the conventional copper heat dissipation type lead frame, the difference in thermal expansion can be reduced to about half, and the residual stress due to heat can be reduced to about half. As a result, reliability such as solder reflow is significantly improved. (2) Even if a 42Ni alloy frame with poor heat dissipation is used,
The use of the AlN heat dissipation plate can improve the heat dissipation of the entire package. 42Ni has a much higher material strength than copper-based materials, so it can maintain good strength even if the pin width is as small as 0.1 mm. In particular, it is sufficient for ultra-multi-pin packages that require ultrafine pinning. It is possible to obtain an outer lead having various strengths. (3) AlN has a specific gravity of about 1/3 of that of the equivalent, so that the weight of the whole can be significantly reduced especially when a radiator plate having a large thickness is targeted. As a result, it is possible to significantly reduce package chucking mistakes when mounting on a substrate.
【図１】本発明の第１の実施例を示す断面図。FIG. 1 is a sectional view showing a first embodiment of the present invention.
【図２】本発明の第２の実施例を示す断面図。FIG. 2 is a sectional view showing a second embodiment of the present invention.
【図３】本発明の第３の実施例を示す断面図。FIG. 3 is a sectional view showing a third embodiment of the present invention.
【図４】本発明の第４の実施例を示す断面図。FIG. 4 is a sectional view showing a fourth embodiment of the present invention.
【図５】本発明の第５の実施例を示す断面図。FIG. 5 is a sectional view showing a fifth embodiment of the present invention.
１ 半導体素子 ２ リ
ードフレーム ３ ポリイミド系熱可塑性接着剤 ４ 放
熱板 ４ａ フィン ５ モ
ールドレジン ６ ボンディングワイヤ ７ 素
子固定接着剤 ８ 熱効果性接着剤1 Semiconductor Element 2 Lead Frame 3 Thermoplastic Polyimide Adhesive 4 Heat Sink 4a Fin 5 Mold Resin 6 Bonding Wire 7 Element Fixing Adhesive 8 Thermo-Effective Adhesive
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/50 Ｆ 9272−4Ｍ Ｇ 9272−4Ｍ Ｈ０１Ｌ 23/36 Ｍ (72)発明者 佐藤 巧 茨城県土浦市木田余町3550番地 日立電線 株式会社システムマテリアル研究所内 (72)発明者 萩谷 重男 茨城県土浦市木田余町3550番地 日立電線 株式会社システムマテリアル研究所内 (72)発明者 高萩 茂治 茨城県土浦市木田余町3550番地 日立電線 株式会社システムマテリアル研究所内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Reference number within the agency FI Technical indication location H01L 23/50 F 9272-4M G 9272-4M H01L 23/36 M (72) Inventor Takumi Sato Ibaraki 3550, Kitayo-cho, Tsuchiura-shi, Hitachi, Ltd. In the System Materials Laboratory, Hitachi Cable Co., Ltd. (72) Inventor Shigeo Hagiya, 3550, Kitayo-cho, Tsuchiura-shi, Ibaraki Hitachi, Ltd. System Materials Laboratory (72) Inventor Shigeharu Takahagi Tsuchiura, Ibaraki Prefecture 3550 Yoyomachi, Kida City, Hitachi Cable Systems Materials Research Center
Claims (4)
ドの先端に、半導体素子を搭載するための所定の厚さの
放熱板を絶縁性接着層を介して一体化した熱放散型リー
ドフレームにおいて、 前記放熱板は、熱伝導率１００Ｗ／ｍＫ以上、且つ、熱
膨張係数１０×１０-6／℃以下のセラミック板より成る
ことを特徴とする熱放散型リードフレーム。1. A heat-dissipating lead frame in which a heat-dissipating plate having a predetermined thickness for mounting a semiconductor element is integrated at the tip of an inner lead of a tabless lead frame via an insulating adhesive layer, The heat-dissipating lead frame is characterized in that the plate is a ceramic plate having a thermal conductivity of 100 W / mK or more and a thermal expansion coefficient of 10 × 10 −6 / ° C. or less.
ルミ）を主成分としている構成の請求項１の熱放散型リ
ードフレーム。2. The heat-dissipating lead frame according to claim 1, wherein the ceramic plate contains AlN (aluminum nitride) as a main component.
塑性接着剤である請求項１の熱放散型リードフレーム3. The heat dissipative lead frame according to claim 1, wherein the insulating adhesive is a thermoplastic polyimide adhesive.
の熱膨張係数が８×１０-6／℃以下の材料より成る請求
項１の熱放散型リードフレーム。4. The heat dissipation lead frame according to claim 1, wherein the lead frame is made of a material having a coefficient of thermal expansion of 8 × 10 −6 / ° C. or less, such as 42Ni alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9552493A JPH06291217A (en) | 1993-03-30 | 1993-03-30 | Heat dissipation type lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9552493A JPH06291217A (en) | 1993-03-30 | 1993-03-30 | Heat dissipation type lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06291217A true JPH06291217A (en) | 1994-10-18 |
Family
ID=14139954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9552493A Pending JPH06291217A (en) | 1993-03-30 | 1993-03-30 | Heat dissipation type lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06291217A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0690501A3 (en) * | 1994-07-01 | 1997-03-26 | Saint Gobain Norton Ind Cerami | Integrated circuit package with diamond heat sink |
| US6661081B2 (en) | 2000-10-20 | 2003-12-09 | Hitachi, Ltd. | Semiconductor device and its manufacturing method |
| JP2010199494A (en) * | 2009-02-27 | 2010-09-09 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method of the same |
-
1993
- 1993-03-30 JP JP9552493A patent/JPH06291217A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0690501A3 (en) * | 1994-07-01 | 1997-03-26 | Saint Gobain Norton Ind Cerami | Integrated circuit package with diamond heat sink |
| US5696665A (en) * | 1994-07-01 | 1997-12-09 | Saint-Gobain/Norton Industrial Ceramics Corporation | Integrated circuit package with diamond heat sink |
| US6466446B1 (en) | 1994-07-01 | 2002-10-15 | Saint Gobain/Norton Industrial Ceramics Corporation | Integrated circuit package with diamond heat sink |
| US6661081B2 (en) | 2000-10-20 | 2003-12-09 | Hitachi, Ltd. | Semiconductor device and its manufacturing method |
| US6962836B2 (en) | 2000-10-20 | 2005-11-08 | Renesas Technology Corp. | Method of manufacturing a semiconductor device having leads stabilized during die mounting |
| JP2010199494A (en) * | 2009-02-27 | 2010-09-09 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method of the same |
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