JPH0628690B2 - Dry type treatment equipment for hydride waste gas - Google Patents

Dry type treatment equipment for hydride waste gas

Info

Publication number
JPH0628690B2
JPH0628690B2 JP2040549A JP4054990A JPH0628690B2 JP H0628690 B2 JPH0628690 B2 JP H0628690B2 JP 2040549 A JP2040549 A JP 2040549A JP 4054990 A JP4054990 A JP 4054990A JP H0628690 B2 JPH0628690 B2 JP H0628690B2
Authority
JP
Japan
Prior art keywords
waste gas
pretreatment tank
hydride
tank
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2040549A
Other languages
Japanese (ja)
Other versions
JPH03242215A (en
Inventor
喜二 斎藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iwatani Corp
Original Assignee
Iwatani Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Iwatani Corp filed Critical Iwatani Corp
Priority to JP2040549A priority Critical patent/JPH0628690B2/en
Publication of JPH03242215A publication Critical patent/JPH03242215A/en
Publication of JPH0628690B2 publication Critical patent/JPH0628690B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Description

【発明の詳細な説明】 《産業上の利用分野》 本発明は、例えば半導体製造過程からのシラン等の水素
化物系廃ガスの処理装置に関する。
TECHNICAL FIELD The present invention relates to an apparatus for treating a hydride-based waste gas such as silane from a semiconductor manufacturing process.

《従来技術》 水素化物系の廃ガスは、有毒であったり、発火性が強か
ったりすることから、処理塔で無害化してから放出され
るのであるが、半導体製造過程からの廃ガス中には、ケ
イ素、二酸化ケイ素、一酸化ケイ素等の微粒子が混入し
ており、この微粒子が直接処理塔に入り込むと、圧損の
増大、閉塞等により、処理塔での処理能力に影響を与
え、また、危険性も増大する。
<Prior art> Since hydride-based waste gas is poisonous or has a strong ignition property, it is released after being detoxified in the processing tower. , Silicon, silicon dioxide, silicon monoxide, etc. are mixed, and if these particles directly enter the processing tower, the processing capacity in the processing tower will be affected due to increased pressure loss, blockage, etc. Sex also increases.

このため、従来では、処理塔に廃ガスを供給する廃ガス
供給路に水酸化ナトリウム水溶液当のアルカリ性水溶液
を貯溜した前処理槽を配置し、廃ガスを水酸化ナトリウ
ム水溶液中でバブリングすることにより、廃ガス中から
微粒子を除去し、微粒子を含まない状態での廃ガスを処
理塔に送り込むようにしていた。
Therefore, conventionally, by disposing a pretreatment tank storing an alkaline aqueous solution such as a sodium hydroxide aqueous solution in the waste gas supply path for supplying the waste gas to the treatment tower, and bubbling the waste gas in the sodium hydroxide aqueous solution, The fine particles were removed from the waste gas, and the waste gas containing no fine particles was fed into the processing tower.

《解決しようとする課題》 ところが、半導体製造過程からの廃ガスを水酸化ナトリ
ウム水溶液中でバブリングさせると、前処理槽から導出
される廃ガスが過度に加湿されることになり、加湿され
た廃ガスが処理塔に流入すると、処理塔内に充填されて
いる処理剤の表面をシランとアルカリ水溶液との反応で
生成した水ガラスでコーティングすることになり、処理
剤の寿命が短くなる、また、処理剤の固着による閉塞等
の問題があった。
<Problems to be solved> However, when bubbling waste gas from the semiconductor manufacturing process in an aqueous sodium hydroxide solution, the waste gas discharged from the pretreatment tank is excessively humidified, and When the gas flows into the processing tower, the surface of the processing agent filled in the processing tower will be coated with water glass produced by the reaction of silane and the alkaline aqueous solution, and the life of the processing agent will be shortened. There was a problem such as clogging due to the adhesion of the treatment agent.

また、廃ガス発生源から真空ポンプで廃ガスを引いて、
前処理槽に送り出すようにしていたのであるが、この場
合、真空ポンプの停止直後にポンプ本体及び半導体製造
装置の負圧により、前処理槽に貯溜されている水酸化ナ
トリウム水溶液を吸い戻し、ポンプ本体及び半導体製造
装置を汚損したり損傷させたりすることがあった。
Also, pull the waste gas from the waste gas source with a vacuum pump,
In this case, it was sent to the pretreatment tank.In this case, immediately after the vacuum pump was stopped, the negative pressure of the pump body and semiconductor manufacturing equipment sucked back the sodium hydroxide aqueous solution stored in the pretreatment tank, The main body and the semiconductor manufacturing device may be contaminated or damaged.

本発明はこのような点に着目してなされたもので、廃ガ
スから微粒子を除去しながらも、廃ガスを加湿しない前
処理を行なえ、しかも、真空ポンプの停止直後でも前処
理槽に貯溜されている処理液を吸い戻さない処理装置を
提供することを目的とする。
The present invention has been made by paying attention to such a point, and it is possible to perform the pretreatment without humidifying the waste gas while removing the fine particles from the waste gas, and moreover, it is stored in the pretreatment tank immediately after the vacuum pump is stopped. It is an object of the present invention to provide a processing device that does not suck back the processing liquid that is present.

《課題を解決するための手段》 上記目的を達成するために本発明は、処理塔へ廃ガスを
供給する廃ガス供給路に配置した前処理槽に硫酸等の難
揮発性無機酸液、難揮発性有機酸液、あるいは難揮発性
油からなる除塵液を貯留し、廃ガスを難揮発性液内でバ
ブリングすることにより、廃ガス中に含まれている微粒
子を除去するように構成するとともに、真空ポンプと前
処理槽との間に逆流液溜め槽を形成し、逆流液溜め槽と
前処理槽とを連通するガス通路中に逆止弁を配置したこ
とを特徴としている。
<< Means for Solving the Problem >> In order to achieve the above object, the present invention provides a pretreatment tank arranged in a waste gas supply path for supplying a waste gas to a treatment tower with a hardly volatile inorganic acid liquid such as sulfuric acid in a pretreatment tank, A volatile organic acid liquid or a dust-removing liquid consisting of a hardly volatile oil is stored, and the waste gas is bubbled in the hardly volatile liquid to remove fine particles contained in the waste gas. A backflow liquid storage tank is formed between the vacuum pump and the pretreatment tank, and a check valve is disposed in a gas passage that connects the backflow liquid storage tank and the pretreatment tank.

《作 用》 本発明では、処理塔へ廃ガスを供給する廃ガス供給路に
配置した前処理槽に難揮発性酸液あるいは難揮発性油を
貯溜し、廃ガスを難揮発性液体内でバブリングすること
により、廃ガス中に含まれている微粒子を除去するよう
に構成しているので、廃ガス中に含まれていた微粒子が
難揮発性液体内で除去され、しかも、前処理槽から導出
された廃ガスは過度に加湿されることがなくなる。
<< Operation >> In the present invention, the hardly volatile acid liquid or the less volatile oil is stored in the pretreatment tank arranged in the waste gas supply path for supplying the waste gas to the treatment tower, and the waste gas is stored in the hardly volatile liquid. By bubbling, it is configured to remove the fine particles contained in the waste gas, so the fine particles contained in the waste gas are removed in the hardly volatile liquid, and moreover, from the pretreatment tank. The discharged waste gas will not be excessively humidified.

また、真空ポンプと前処理槽との間に逆流液溜め槽を形
成し、ガス溜め槽と前処理槽とを連通するガス通路中に
逆止弁を配置しているので、かりに、真空ポンプの停止
直後にポンプ本体及び半導体製造装置内の負圧力がガス
通路に作用しても、逆流液溜め槽と前処理槽との間の通
路に逆止弁が配置されていることから、前処理槽に貯溜
されている除塵液がガス通路を逆流することを防止す
る。さらに、真空ポンプ停止時に逆止弁から除塵液が漏
洩することがあっても、その漏洩除塵液は逆流液溜め槽
にトラップされることになり、ポンプ本体及び半導体製
造装置に除塵液が逆流することがなくなる。
In addition, since a backflow liquid storage tank is formed between the vacuum pump and the pretreatment tank, and a check valve is arranged in the gas passage that connects the gas storage tank and the pretreatment tank, the vacuum pump Even if the negative pressure in the pump body and semiconductor manufacturing equipment acts on the gas passage immediately after the stop, the check valve is placed in the passage between the backflow liquid storage tank and the pretreatment tank. It is possible to prevent the dust removing liquid stored in the gas from flowing backward through the gas passage. Furthermore, even if the dust removal liquid leaks from the check valve when the vacuum pump is stopped, the leaked dust removal liquid is trapped in the backflow reservoir, and the dust removal liquid flows back to the pump body and the semiconductor manufacturing equipment. Will disappear.

《実施例》 図面は水素化物系廃ガスの処理系を示す流れ図である。<< Example >> A drawing is a flow chart showing a processing system of hydride system waste gas.

図中符号(1)は半導体製造装置等の水素化物系廃ガス発
生源であり、この水素化物系廃ガス発生源(1)は廃ガス
排出路(2)で処理塔(3)に連通している。処理塔(3)内
にはアルミナ等の固形担体に水酸化ナトリウムと過マン
ガン酸カリウムとを含浸させてなる処理剤(4)が充填し
てある。
Reference numeral (1) in the figure is a hydride-based waste gas generation source for semiconductor manufacturing equipment, etc. This hydride-based waste gas generation source (1) communicates with a processing tower (3) through a waste gas discharge passage (2). ing. The treatment tower (3) is filled with a treatment agent (4) obtained by impregnating a solid carrier such as alumina with sodium hydroxide and potassium permanganate.

水素化物系廃ガス発生源(1)と処理塔(3)との間の廃ガ
ス排出路(2)には、廃ガス発生源(1)側から真空ポンプ
(5)、逆流液溜め槽(6)、前処理槽(7)が順に配置して
ある。また、逆流液溜め槽(6)と前処理槽(7)との間の
廃ガス排出路(2)には逆流液溜め槽(6)側から前処理槽
(7)への廃ガス流通を許す逆止弁(8)が配置してある。
そして、前処理槽(7)には濃硫酸やリン酸に代表される
難揮発性強酸液からなる除塵液(9)が貯溜してあり、廃
ガスはこの除塵液(9)内に吹き込まれてバブリングする
ようにしてある。そして、このバブリング中に廃ガスに
含まれているケイ素、二酸化ケイ素、一酸化ケイ素等の
微粒子が除塵液(9)で除去されることになるから、微粒
子が処理塔(3)内に流入することがなくなるうえ、除塵
液(9)に難揮発性強酸を使用しているから、この除塵液
成分が処理塔(3)に流れ込むことがなく、処理塔(3)内
の処理剤(4)に影響を与えることがない。また、難揮発
性強酸液は脱水作用が大きいから、処理塔(3)に流入す
る廃ガスは乾燥状態になっており、処理剤(4)の表面に
水ガラスが生成することがなくなる。
The waste gas discharge path (2) between the hydride-based waste gas generation source (1) and the processing tower (3) has a vacuum pump from the waste gas generation source (1) side.
(5), the backflow liquid storage tank (6) and the pretreatment tank (7) are arranged in this order. Further, the waste gas discharge path (2) between the backflow liquid storage tank (6) and the pretreatment tank (7) is connected to the pretreatment tank from the backflow liquid storage tank (6) side.
A check valve (8) is arranged to allow waste gas flow to (7).
The pretreatment tank (7) stores a dust removing liquid (9) consisting of a hardly volatile strong acid liquid represented by concentrated sulfuric acid and phosphoric acid, and the waste gas is blown into the dust removing liquid (9). Bubbling. Then, since the fine particles such as silicon, silicon dioxide, and silicon monoxide contained in the waste gas during the bubbling are removed by the dust removing liquid (9), the fine particles flow into the treatment tower (3). In addition, since the non-volatile strong acid is used for the dust removal liquid (9), the dust removal liquid component does not flow into the treatment tower (3), and the treatment agent (4) in the treatment tower (3) Does not affect. Moreover, since the hardly volatile strong acid solution has a large dehydrating action, the waste gas flowing into the treatment tower (3) is in a dry state, and water glass is not generated on the surface of the treatment agent (4).

なお、上記実施例では前処理槽(7)に貯溜する除塵液
(9)を難揮発性酸液で形成しているが、除塵液(9)を真
空ポンプ用潤滑油(例えばフオンブリング)等の難揮発
性油で構成するようにしてもよい。
In the above embodiment, the dust removal liquid stored in the pretreatment tank (7)
Although (9) is formed of a hardly volatile acid liquid, the dust removing liquid (9) may be made of a hardly volatile oil such as a vacuum pump lubricating oil (for example, fumbling).

《効 果》 本発明では、処理塔へ廃ガスを供給する廃ガス供給路に
配置した前処理槽に難揮発性酸液あるいは難揮発性油を
貯溜し、廃ガスを難揮発性液体内でバブリングすること
により、廃ガス中に含まれている微粒子を除去するよう
に構成しているので、廃ガス中に含まれていた微粒子が
難揮発性液体内で除去され、しかも、前処理槽から導出
された廃ガスは過度に加湿されることがなくなるから、
処理塔内で処理剤の表面をシランとアルカリとの反応で
生成された水ガラスでコーティングすることがなくな
り、処理剤の性能を十分発揮させることができる。
<< Effect >> In the present invention, the hardly volatile acid liquid or the less volatile oil is stored in the pretreatment tank arranged in the waste gas supply path for supplying the waste gas to the treatment tower, and the waste gas is stored in the hardly volatile liquid. By bubbling, it is configured to remove the fine particles contained in the waste gas, so the fine particles contained in the waste gas are removed in the hardly volatile liquid, and moreover, from the pretreatment tank. The discharged waste gas will not be excessively humidified,
Since the surface of the treatment agent is not coated with water glass produced by the reaction of silane and alkali in the treatment tower, the performance of the treatment agent can be sufficiently exhibited.

また、真空ポンプと前処理槽との間に逆流液溜め槽を形
成し、逆流液溜め槽と前処理槽とを連通するガス通路中
に逆止弁を配置しているので、かりに、真空ポンプの停
止直後にポンプ本体及び半導体製造装置内の負圧力がガ
ス通路に作用しても、逆溜液溜め槽と前処理槽との間の
通路に逆止弁が配置されていることから、前処理槽に貯
溜されている除塵液がガス通路を逆流することを防止す
ることができる。さらに、真空ポンプ停止時に逆止弁か
ら除塵液が漏洩することがあっても、その漏洩除塵機は
逆流液溜め槽にトラップされることになり、ポンプ本体
及び半導体製造装置に除塵液が逆流することを無くすこ
とができる。
In addition, a backflow liquid storage tank is formed between the vacuum pump and the pretreatment tank, and a check valve is arranged in the gas passage that connects the backflow liquid storage tank and the pretreatment tank. Even if the negative pressure in the pump body and the semiconductor manufacturing equipment acts on the gas passage immediately after the stop, the check valve is placed in the passage between the reverse reservoir tank and the pretreatment tank. It is possible to prevent the dust removal liquid stored in the processing tank from flowing backward through the gas passage. Further, even if the dust removal liquid leaks from the check valve when the vacuum pump is stopped, the leaked dust removal device is trapped in the backflow liquid storage tank, and the dust removal liquid flows back to the pump body and the semiconductor manufacturing equipment. You can get rid of things.

【図面の簡単な説明】[Brief description of drawings]

図面は水素化物系廃ガスの処理系を示す流れ図である。 1……廃ガス発生源、2……廃ガス排出路、 3……廃ガス処理塔、5……真空ポンプ、 6……逆流液溜め槽、7……前処理槽、 8……逆止弁、9……除塵液。 The drawing is a flow chart showing a treatment system for hydride-based waste gas. 1 ... Waste gas generation source, 2 ... Waste gas discharge passage, 3 ... Waste gas processing tower, 5 ... Vacuum pump, 6 ... Backflow liquid storage tank, 7 ... Pretreatment tank, 8 ... Check Valve, 9 ... Dust removal liquid.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】シラン等の水素化物系廃ガス発生源(1)と
廃ガス処理塔(3)とを連通する廃ガス排出路(2)に真空
ポンプ(5)、逆流液溜め槽(6)、前処理槽(7)を順に配
置し、前処理槽(7)に除塵液(9)として難揮発性無機ま
たは有機酸液を貯溜して廃ガスを難揮発性無機または有
機酸液内でバブリングすることにより廃ガス中に含まれ
ている微粒子を除去するように構成し、逆流液溜め槽
(6)と前処理槽(7)とを連通する廃ガス排出路(2)に順
流方向へのガス流通を許す逆止弁(8)を配置したことを
特徴とする水素化物系廃ガスの乾式処理装置
1. A vacuum pump (5) and a backflow liquid storage tank (6) are provided in a waste gas discharge passage (2) that connects a hydride-based waste gas generation source (1) such as silane and a waste gas treatment tower (3). ), The pretreatment tank (7) is arranged in order, and the waste gas is stored in the pretreatment tank (7) as a dust removing liquid (9) by storing the hardly volatile inorganic or organic acid liquid in the hardly volatile inorganic or organic acid liquid. It is configured to remove fine particles contained in the waste gas by bubbling with a backflow liquid storage tank.
A hydride-based waste gas characterized in that a check valve (8) that allows gas to flow in the forward flow direction is arranged in a waste gas discharge passage (2) that connects the (6) and the pretreatment tank (7). Dry processing device
【請求項2】シラン等の水素化物系廃ガス発生源(1)と
廃ガス処理塔(3)とを連通する廃ガス排出路(2)に真空
ポンプ(5)、逆流液溜め槽(6)、前処理槽(7)を順に配
置し、前処理槽(7)に除塵液(9)として難揮発性油を貯
溜して廃ガスを難揮発性油内でバブリングすることによ
り、廃ガス中に含まれている微粒子を除去するように構
成し、逆流液溜め槽(6)と前処理槽(7)とを連通する廃
ガス排出路(2)に順流方向へのガス流通を許す逆止弁
(8)を配置したことを特徴とする水素化物系廃ガスの乾
式処理装置
2. A vacuum pump (5) and a backflow liquid storage tank (6) in a waste gas discharge passage (2) which connects a waste gas treatment source (3) with a hydride waste gas generation source (1) such as silane. ), The pretreatment tank (7) is arranged in order, and the non-volatile oil is stored in the pre-treatment tank (7) as the dust removing liquid (9) and the waste gas is bubbled in the non-volatile oil to remove the waste gas. It is configured to remove the fine particles contained therein, and the waste gas discharge passage (2) that connects the backflow liquid storage tank (6) and the pretreatment tank (7) to the reverse flow direction that allows gas to flow in the forward direction. Stop valve
Dry treatment device for hydride-based waste gas, characterized in that (8) is arranged
JP2040549A 1990-02-20 1990-02-20 Dry type treatment equipment for hydride waste gas Expired - Lifetime JPH0628690B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2040549A JPH0628690B2 (en) 1990-02-20 1990-02-20 Dry type treatment equipment for hydride waste gas

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2040549A JPH0628690B2 (en) 1990-02-20 1990-02-20 Dry type treatment equipment for hydride waste gas

Publications (2)

Publication Number Publication Date
JPH03242215A JPH03242215A (en) 1991-10-29
JPH0628690B2 true JPH0628690B2 (en) 1994-04-20

Family

ID=12583534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2040549A Expired - Lifetime JPH0628690B2 (en) 1990-02-20 1990-02-20 Dry type treatment equipment for hydride waste gas

Country Status (1)

Country Link
JP (1) JPH0628690B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1027918B1 (en) * 1997-10-17 2005-12-28 Ebara Corporation Method and apparatus for processing exhaust gas of semiconductor fabrication
CN113362978B (en) * 2021-06-23 2022-02-11 中国核动力研究设计院 Method for inorganic treatment of organic matters in radioactive decontamination waste liquid and application

Also Published As

Publication number Publication date
JPH03242215A (en) 1991-10-29

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