JPH06281602A - Surface analyzing and ion implanting device - Google Patents

Abstract

PURPOSE:To obtain a surface analyzing and ion implanting device which can perform both surface analysis and ion implantation with a compact constitution without taking out an ion-implanted sample into the air. CONSTITUTION:In a sample chamber 50, a goniometer 21 is provided and a sample which is irradiated with an ion beam arriving at the sample through collimated apertures 17a and 17b is held in a state where the sample is counterposed to the meter 21. In addition, a sample holder 112 is also provided in the chamber 50 so that the holder 12 can move between the ion implanting position and sample receiving and delivering position and can receive the sample attached to the front end section of a sample carrying rod 41 at the sample receiving and delivering position. The holder 112 can also transfer the sample from the sample receiving and delivering position and transfer the ion-implanted sample to a sample holding section by moving the rod 41 forward and backward after stopping at a position near the meter 21. Moreover, the holder 112 can take out the sample from a preparatory chamber 40 after surface analysis by receiving the sample with its front end section.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion implantation apparatus which also serves as surface analysis.

[0002]

2. Description of the Related Art FIGS. 4 and 5 show a conventional example of this type of apparatus, in which a high voltage terminal 2 is provided in a substantially rectangular shield box 1. Although this is not shown in the figure, a plurality of insulating pillars mounted on the ground potential floor of the shielding box 1 allow a predetermined applied voltage (about 200 k in this case) from the ground floor.
V) is installed at a distance that ensures a sufficient withstand voltage.

Furthermore, the high voltage terminal 2 is covered with a shield box 1 at a space distance having a sufficient withstand voltage against a predetermined applied voltage.

In the high voltage terminal 2, as is known,
An ion source 3 is provided, and a mass separation magnet 4 is connected to the ion source 3 via a vacuum pipe R. Further, it is connected to the accelerating pipe 5 via a vacuum pipe R, and the other end thereof is fixed to the inner wall surface of the shielding box 1.

Outside the shielding box 1, the accelerating tube 5 is connected to a pair of ion beam focusing magnetic lenses 6a and 6b, which are further connected via a beam pipe 14 to a switching magnet 7.
It is connected to the. Although this has a known structure, it is configured so that the ion beam from the upstream side is passed to the separation tube 15a side or 15b side by the current passed through this coil.

In FIG. 4, a range indicated by a chain line A indicates a region of the ion implantation beam line, and a range indicated by a chain line B indicates a surface analysis beam line region.

In the ion implantation beamline region A, an XY scanning chamber 8 is connected to the branch pipe 15b, and inside the Y-direction scanning plate (a pair of deflection electrodes) 9 and also a pair of deflection electrodes. The X-direction scanning plate 10 is provided. The XY scanning chamber 8 is connected to the injection chamber 11, and a vacuum pump 13 for exhausting the inside of the injection chamber 11 is attached to the outer wall surface of the XY scanning chamber 8. A sample holder 12 is provided in the injection chamber 11.

In the beam line region B for surface analysis, an ion transit beam pipe 16 is connected to one branch pipe 15a of the switching magnet 7, and collimator apertures 17a and 17b are provided near both ends thereof. There is. Further, an analysis chamber 18 is connected to the downstream end of the ion traveling beam pipe 16, and a rotary table 19 is concentrically arranged with the analysis chamber 18 inside and rotated about its central axis. It is arranged as possible.

An electrostatic analyzer 20 shown in FIG. 5 is arranged on the rotary table 19, and a goniometer 21 is arranged near the center thereof. The goniometer 21 has a well-known configuration, but is configured to perform translational motion and rotary motion independently of the rotary table 19.

A vacuum pump 22 is provided on the outer wall portion of the analysis chamber 18, whereby the analysis chamber 18 is provided.
The inside is exhausted to a predetermined pressure reduction degree.

Next, with reference to FIG. 5, details of each structure arranged on the rotary table 19 will be described.
The whole electrostatic analyzer 20 is shown by a chain line,
Each of the components is contained in a rectangular casing, and a pair of arc-shaped deflection electrodes 25a and 25b are arranged at a predetermined distance in a lower region inside the casing. The ion beam 31 is applied to a sample attached to the goniometer 21 as a holder. The ion beam 31a scattered from this is guided to the gap between the electrodes 25a and 25b, where the Lorentz force is applied to the ions. However, this is led out upward, and the slit plate 26 is provided above the deflection electrodes 25a and 25b.
Is provided, and the slit hole 26a formed in this is provided.
The ion beam that passed through is a charged particle multiplier tube and position detector 2
7. The output terminal 28 is connected to an external data processing system through an insertion hole formed in the upper wall of the casing of the analyzer 20 and further through a hole formed in the upper wall of the analysis chamber 18. It

Further, the high voltage power supply 29 is connected to the analysis chamber 18
A high-voltage cable 30 is led out from this output end and is introduced into the analysis chamber 18 through the vacuum wall of the analysis chamber 18, and the above-mentioned deflection electrodes 25a and 25b.
It is connected to the.

The conventional ion implantation apparatus that also serves as surface analysis is constructed as described above. Next, this function will be described.

The ion implantation apparatus that also serves as the surface analysis is constructed as described above. Next, this function will be described.
In FIG. 4, the ion source 3 is kept in a vacuum state by exhausting gas molecules through a vacuum pump and a pipe (not shown). The ion source 3 is housed in the high-voltage terminal 2 and is supplied with electric power from a gas cylinder (not shown), which is a material of desired ions, and a power supply device (not shown). Plasma is generated in the source 3 and the voltage applied to the ion source 3, which is also not shown, accelerates the ions from the ion source 3 to the potential of the high voltage terminal 2. Ions derived from the ion source 3 enter into the vacuum pipe housed in the mass separation magnet 4, and the trajectory of the ions is bent by the Lorentz force due to the magnetic field generated therein and the velocity of the ions. At this time, by adjusting the current value input to the mass separation electromagnet 4, desired ions are derived therefrom and guided into the accelerating tube 5 on the downstream side.

Although not shown, the acceleration tube 5 is driven by a voltage applied to the high voltage terminal 2 by a high voltage generator.
The ions that have entered inside are accelerated to the ground potential with the energy of the product of the above-mentioned high voltage and the number of ions, and are focused by the focusing lenses 6a and 6b outside the shielding box 1 and then disposed on the downstream side. It is guided to the ion implantation beamline region A or the surface analysis beamline region B, which is selected by the current flowing through the coil of the switching magnet 7 and is introduced into the ion implantation beamline region A now. To explain the case, the ions are placed on a predetermined locus by the deflection electrodes 9 and 10 in the X and Y directions.

Further, since a voltage of a certain frequency is applied to the X-Y scanning plates 9 and 10, this ion beam is evenly distributed on the sample on the sample stage arranged in the implantation chamber 11. It is irradiated and ions are implanted in this sample.

Next, the surface analysis beam line region B will be described. The switching magnet 7 is used to branch the branch pipe 15a.
The ion beam 31 guided to the side is provided with a pair of collimator apertures 1 arranged in the ion traveling beam pipe 16.
By passing through 7a and 17b, a beam having a divergence angle determined by the hole diameter of the collimating apertures 17a and 17b and the distance between the collimating apertures 17a and 17b is formed.
The light is incident on the inside of the laser beam 8 and is irradiated on the sample attached to the goniometer 21.

The ion beam 31 irradiated in FIG.
Are scattered on the sample attached to the goniometer 21 to form a beam flow indicated by 31a, and the electrostatic analyzer 20
Is introduced between the deflection electrodes 25a and 25b. At this time, the voltage applied to these deflection electrodes 25a and 25b causes
Of the scattered ion beam particles 31a, only charged particles are deflected by the electric field formed between the deflection electrodes 25a and 25b, and further separated by the slit plate 26,
It is guided to the detector 27. The signal of this stream, not shown, is fed to the data processing system via a signal cable 28 to obtain an energy spectrum and an angular spectrum depending on its scattered energy and scattered angle.

[0019]

The conventional ion implantation apparatus which also serves as the surface analysis has the above-described structure and operates, but the volume of the electrostatic analyzer 20 is W.
XHxD is considerably large at 100 mm x 350 mm x 150 mm, and the radius (indicated by r in the figure) of the rotary table 19 on which the analyzer 20 is mounted is also about 20 cm to 25 c.
As a result, the diameter of the analysis chamber 18 accommodating the rotary table 19 is 40 cm.
It will be ~ 50 cm. As a result, if the analysis chamber 18 is installed downstream of the switching magnet 7 as shown, the length of the beamline 16 must be increased. For this reason, when the injection chamber 11 is provided together with the analysis chamber 18 at the same distance from the switching magnet 7, the angle deflected by the switching magnet 7 for removing impurities (angle α in FIG. 4).
When the distance between the scanning chamber 8 and the injection chamber 11 is increased, that is, the length of tan α (indicated by L in FIG. 4) is increased, and the distance between the injection chamber 11 and the analysis chamber 18 is increased in this manner, the entire apparatus becomes Will turn into.

On the other hand, in the ion chamber 11,
In order to measure the damage to the sample due to the ion implantation and the change in the crystallinity of the sample due to the ion implantation, the sample is transferred from the implantation chamber 11 to the analysis chamber 18
However, if the sample is exposed to the atmosphere at this time, the sample may become dirty and the surface information may be lost. Therefore, in order to transfer the ion-implanted sample in the injection chamber 11 into the analysis chamber 19 without exposing it to the atmosphere, a vacuum valve or the like is interposed between the injection chamber 11 and the analysis chamber 18 to create a vacuum. Connect with piping,
It is necessary to newly provide a vacuum transfer mechanism so that the sample holder 12 and the goniometer 21 can be transferred, but such a transfer mechanism is complicated,
The cost is also high. The present invention has been made in view of such a problem, and in transporting an ion-implanted sample to a chamber for performing surface analysis, the cost can be greatly reduced as compared with the conventional method, and the surface analysis can be downsized. It is an object of the present invention to provide an ion implantation device that also functions as a device.

[0021]

The above-mentioned object is to provide a switching means for switching the traveling direction of the ion beam to one of two predetermined directions, and the switching means is airtight in one of the two directions. The surface analysis chamber, the ion implantation chamber airtightly connected in the other of the two directions, and the sample for receiving the ion beam projected in the one direction in the surface analysis chamber. First to support
Surface analysis for receiving a scattered ion beam from the sample of the ion beam projected on the sample, the sample being supported in close proximity to the sample supported by the first table, and analyzing the surface And a second support for supporting a sample so as to receive an ion beam projected in the other direction in the ion implantation chamber, wherein the surface analysis chamber also comprises: The surface analysis and ion implantation apparatus is characterized in that the ion implantation chamber is integrated with the outer wall portion in common, and the surface analyzer is a semiconductor detector.

Further, the above object is to provide a support for supporting a sample in a vacuum chamber provided with an ion beam introduction port, and to bring the ion beam to the sample in the vicinity of the sample attached to the support. A semiconductor detector that projects the ion beam introduced from the inlet and receives the scattered ion beam is provided movably, and through a vacuum holding valve that is airtightly attached to the opening of the outer wall of the vacuum chamber. A spare chamber for temporarily storing a sample is connected, and a sample transport rod that can be introduced into and taken out from the vacuum chamber through the spare chamber and the opening is provided, and the sample transport rod is provided between the spare chamber and the support base. Should be ion-implanted and the sample that has been ion-implanted should be delivered. When surface analysis is performed, the semiconductor detector should be close to the sample mounted on the support base. It happened in the position, when implanting ions is accomplished by surface analysis and the ion implantation apparatus, characterized in that it has be moved to the spaced position.

[0023]

The semiconductor detector is much smaller than the conventional electrostatic type surface analyzer, and the ion implantation chamber and the surface analysis chamber are integrated with the outer wall part in common. Can be very small.

In addition, it is possible to inject ions into the sample in one vacuum chamber and on one support base, and to perform surface analysis, and further inject ions into this support base to perform surface analysis. Since it is possible to transfer the sample to be supported to the support base by the sample transport rod, it is possible to greatly reduce the size of the entire apparatus while preventing the sample from contacting the atmosphere.

[0025]

Embodiments of the present invention will be described below with reference to the drawings. The parts corresponding to the above-mentioned conventional example are designated by the same reference numerals, and detailed description thereof will be omitted.

In FIG. 1, the high voltage terminal 2 and the ion accelerator tube 5 arranged upstream of the switching magnet 15 are provided.
Although not shown in the drawings, these are exactly the same as the conventional ones, and therefore their explanations are also omitted.

Unlike the conventional example, collimator apertures 17a and 17b are arranged in the sample chamber 50 according to the present invention so as to face each other.
A Faraday flag 34 is disposed on the further downstream side of the collimating aperture 17b on the downstream side so as to be movable in a direction indicated by an arrow, and the collimating aperture 17b is provided.
It is possible to selectively take a position opposite to the hole of No. 1 and a position avoiding from this by moving laterally. A sample 42 is mounted on the goniometer 21,
A semiconductor detector 33 is arranged so that an ion beam is applied to this and receives a beam scattered from it. The semiconductor detector 33 has a known structure, and the ion beam collides with this. As a result, a pair of a hole and an electron is generated in the semiconductor, but this flows sharply to either side due to the potential applied to both electrodes, and a pulse is generated. Thereby, the energy of the scattered ion beam and the number of the ions are detected. This utilizes a depletion layer of a semiconductor, and this method is used to create a surface barrier type (abbreviated as SSD: Surface bar).
rier Silicon solid state
Detector), lithium drift type, and high-purity vacuum semiconductor type. In this embodiment, a surface barrier type semiconductor detector 33 is used.

The sample chamber 50 has a shape as shown in FIG. 1 as a whole, and the goniometer 21 is formed by this end wall.
A vacuum holding door 35 is provided at the back of the so as to be openable and closable. On the other hand, in the ion implantation system, the Y deflection plate 9 and the X deflection plate 10 are also arranged in the sample chamber 50 so as to face each other as shown in the drawing, and the sample holder 112 is provided on the downstream side thereof around the shaft 112a by a solid line. Also, as shown by the alternate long and short dash line, it is provided so as to be rotatable and hold its position. At the end wall of the sample chamber 50 behind this, a vacuum holding door 37 is provided so as to be openable and closable.

Further, in the drawing of the sample chamber 50, a preparatory chamber or a sample preparation chamber 40 is connected to a lower wall portion via a vacuum holding valve 38, and a sample inlet 39 is provided on one side wall portion thereof. It is provided. Further, a sample transport rod 41 is provided penetrating the vacuum holding valve 38 and the sample preparation chamber 40 described above so as to be reciprocally movable in the arrow direction. As shown by the alternate long and short dash line in the sample chamber 50, it is positioned and stopped at a position close to the sample holder of the goniometer 21 and the sample table 112 for ion implantation.

The ion implantation apparatus that also serves as the surface analysis according to the embodiment of the present invention is constructed as described above. Next, its operation will be described.

First, the sample inlet 39 is opened, the sample is attached to the tip of the sample transport rod 41, and the sample is placed in the preliminary chamber 40. Here, the vacuum holding valve 38 is kept closed (the rod 41 is allowed to slide airtightly on the front wall of the spare chamber 40), and the spare chamber 40 is exhausted by an exhaust system (not shown). When the pressure drops to a predetermined level, the vacuum holding valve 38
And the sample transport rod 41 to which the sample 42 is attached is moved forward in the preliminary chamber 40. At this time, the sample chamber 5
Within 0, the sample holder 112 is located at the left position indicated by the alternate long and short dash line, and the sample transport rod 41 is attached to this holding portion.
Transfer and attach the sample attached to the tip of the. After this, the sample transport rod 41 retracts. The sample holder 112 is then rotated 90 ° clockwise around the axis 112a.
It rotates and takes the position shown by the solid line. That is, the beam projected from the XY plates 9 and 10 is set so as to be received at a right angle. After that, the ions are accelerated by an ion accelerator (not shown), deflected toward the sample holder 112 side by the switching magnet 15, and a voltage is applied to the XY plates 9 and 10, so that the sample 42 on the sample holder 112 is ionized. Irradiate two-dimensionally uniformly.

After the implantation of the predetermined ions is completed, the sample holder 112 is moved counterclockwise by 90 °.
Rotate to a position facing the sample transport rod 41.
Here, the sample holder 1 is attached to the tip of the sample transport rod 41.
A sample 42 implanted with ions is received from 12. After that, the sample holder 112 is rotated clockwise by 180 ° around the shaft 112a to take the right position shown by the alternate long and short dash line. Next, the sample transport rod 41 moves forward and stops at a position close to the goniometer 21. Here, the sample 42 in which ions have been implanted from the tip of the sample transport rod 41 is mounted on the sample holder of the goniometer 21. Then, the switching magnet 15 is switched to separate desired ions and introduce them into the analysis system. The ion beam introduced into this analysis system is collimated by a pair of collimator apertures 17a and 17b and is irradiated onto a sample 42 attached to the goniometer 21. Among the irradiated ions, the ions backscattered on the surface of the sample 42 are the semiconductor detector 3
It is incident on 3.

The signal generated in the semiconductor detector 33 is
It is taken out to the atmosphere side through the wall surface of the sample chamber 50 by a cable, introduced into a surface analysis processing system (RBS, etc.), and data processed. After the analysis is completed, the sample 42 is reloaded on the tip of the sample transport rod 41, the vacuum holding valve 38 (at this time, the sample holder 12 is located on the right side of the alternate long and short dash line) is opened, and the preliminary chamber 40 is opened. Be transported. At this time, the preliminary chamber 40 is kept in a vacuum state before the valve 38 is opened. Although the preliminary chamber 40 is not shown in the figure after the vacuum holding valve 38 is closed, the sample 42 conveyed to the preliminary chamber 40 is returned to the atmospheric pressure by introducing the purge gas from the gas introduction port. After this, the sample inlet 39 is opened and the tested sample is taken out.

Next, with reference to FIG. 2, description will be given of an ion implantation apparatus for surface analysis according to a second embodiment of the present invention. The parts corresponding to those of the conventional example and the first embodiment are designated by the same reference numerals, and detailed description thereof will be omitted.

In this embodiment, the ion accelerating voltage is set to 200 kV, and the mass separating magnet 4 is installed not on the high voltage terminal 2 but on the ground potential side, so that the ion accelerating section C is set to the first position. It is more compact than the embodiment.

Further, the collimating apertures 17a, 1
7b and the semiconductor detector 33 can be moved to a position where they do not interfere with the ion beam coming from the upstream side by a moving mechanism (not shown) in the analysis chamber 50. When the sample 42 is analyzed, it can be moved to the illustrated position. That is, in the present embodiment, the sample chamber 50 can be made more compact by unifying the ion implantation beam line and the analysis beam line, and the sample holder 51 is provided in the central portion. In this embodiment,
Since the ion accelerating section C does not have the mass separation magnet 4 built therein, the ion accelerating section C can be made much smaller than the conventional one, but the ion beam between the ion accelerating section C and the sample chamber 50 can be reduced. By making effective use of the passage through which the device passes, the entire apparatus including the ion accelerating section C is made extremely compact. Further, in this embodiment, a focusing lens (either magnetic or electric field is acceptable) may be installed on the downstream side of the mass separation magnet 4. Further, in the drawing, a neutral particle track of the X-direction scanning plate 10 may be provided. Other functions and effects are similar to those of the first embodiment.

FIG. 3 shows an ion implantation apparatus which also serves for surface analysis according to the third embodiment of the present invention. The parts corresponding to those of the above-mentioned embodiment and the conventional example are designated by the same reference numerals, and their details will be described. Detailed description is omitted.

That is, according to the present embodiment, the partition wall 43 for separating the analysis side and the ion implantation side in the sample chamber 50.
A vacuum partition valve 36 is provided so that the sample transport rod 41 can be inserted thereinto. With this, in addition to the effects of the above-described embodiment, the degree of vacuum can be independently changed on the surface analysis side and the ion implantation side. However, in the surface analysis, an ultra-vacuum is desirable. It can be exhausted to a predetermined pressure regardless of the above. Other functions and effects are similar to those of the first and second embodiments.

Although the respective embodiments of the present invention have been described above, the present invention is not limited to these, and various modifications can be made based on the technical idea of the present invention.

For example, in the above embodiments, the ions are accelerated at 200 kV in the acceleration section, but the number is not limited to this value, and may be accelerated at a higher acceleration voltage.

Further, in the above embodiments, the semiconductor detector 3
Although 3 is provided movably, it may be fixed.

In the above embodiment, the sample transport rod 4 is also used.
1 is simply shown as a rod shape, but any structure in which a sample is handed over in a conventional vacuum container, for example, from a preparation chamber to a sputtering chamber or vice versa is applicable.

[0043]

As described above, according to the ion implantation apparatus for surface analysis of the present invention, the entire apparatus can be made extremely compact, so that the cost required for assembling the respective parts is greatly increased. The surface analysis of the sample can be performed accurately because it is not necessary to take it out to the atmosphere for performing the surface analysis of the ion-implanted sample. This makes it possible to carry without requiring a complicated carrying mechanism.

[Brief description of drawings]

FIG. 1 is a partially cutaway plan view of an ion implantation apparatus that also serves for surface analysis according to a first embodiment of the present invention.

FIG. 2 is a partially cutaway plan view of an ion implantation apparatus that also serves for surface analysis according to a second embodiment of the present invention.

FIG. 3 is a partially cutaway plan view according to a third embodiment of the present invention.

FIG. 4 is a partially cutaway plan view of an ion implantation apparatus that also serves as a surface analysis of a conventional example.

FIG. 5 is an enlarged perspective view of the main part.

[Explanation of symbols]

 33 semiconductor detector 41 carrier rod 50 sample chamber

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshiaki Agawa 2500 Hagien, Chigasaki City, Kanagawa Japan Vacuum Technology Co., Ltd. (72) Inventor Yuzo Sakurada 2500 Hagien, Chigasaki City, Kanagawa Nihon Vacuum Technology Co.

Claims (7)

[Claims] 1. A switching means for switching the traveling direction of an ion beam to one of two predetermined directions, and a chamber for surface analysis airtightly connected to the switching means in one of the two directions. An ion implantation chamber that is hermetically connected in the other of the two directions, a first support that supports the sample so as to receive an ion beam projected in the one direction in the surface analysis chamber, and (1) a surface analyzer which is arranged in the vicinity of a sample supported by a support table, receives a scattered ion beam of the ion beam projected on the sample and analyzes the ion beam, and the ion implantation And a second support for supporting a sample so as to receive an ion beam projected in the other direction in a chamber for ionization, the chamber for surface analysis and the ion implantation And an ion implantation apparatus, wherein the chamber is integrated with the outer wall in common, and the surface analyzer is a semiconductor detector. 2. A preparatory chamber for temporarily storing a sample is connected to an opening of the outer wall portion via a vacuum holding valve airtightly attached, and the integrated chamber is passed through the preparatory chamber and the opening. A sample transport rod that can be introduced into and out of the first support platform is provided therein, and the sample transport rod is used to transfer the sample to be ion-implanted and the ion-implanted sample to and from the second support platform. 2. The surface analysis / ion implantation apparatus according to claim 1, wherein the sample ion-implanted and the surface-analyzed sample are transferred between the two. 3. The surface analysis and ion implantation apparatus according to claim 1, wherein the semiconductor detector is rotatable so that a direction facing the sample can be changed. 4. The second support base is rotatable to three positions, transfers a sample to and from the sample transport rod at a first angular position, and transfers an ion beam at a second angular position. The surface analysis and ion implantation apparatus according to claim 2, wherein the sample transport rod is allowed to move so as to pass the side of the second support base at a third angular position upon being irradiated. 5. The surface analysis / ion implantation apparatus according to claim 1, wherein a partition is provided so as to hermetically define the inside of the integrated chamber between the surface analysis chamber side and the ion implantation chamber side. 6. A preliminary chamber for temporarily storing a sample is connected via an airtightly attached vacuum holding valve to the opening of the outer wall, and the integrated chamber is passed through the preliminary chamber and the opening. A sample transport rod that can be introduced into and out of the sample support rod is provided therein, and the sample transport rod is used to transfer the sample to be ion-implanted and to be ion-implanted with the second support base, and to provide a partition valve in the partition wall portion. 6. The surface according to claim 5, wherein the partition valve is provided so that the sample transport rod can be inserted therethrough, and the ion-implanted and surface-analyzed sample is delivered to and from the first support base. Analytical and ion implantation equipment. 7. A support table for supporting a sample is provided in a vacuum chamber provided with an ion beam introduction port, and is introduced into the sample from the ion beam introduction port in the vicinity of the sample attached to the support table. A semiconductor detector that projects an ion beam and receives the scattered ion beam is movably provided, and the sample is temporarily stored through a vacuum holding valve that is hermetically attached to the opening of the outer wall of the vacuum chamber. A sample carrying rod that can be introduced into and taken out of the vacuum chamber through the spare chamber and the opening, and ion implantation should be performed between the sample carrying rod and the support base. And the ion-implanted sample is transferred, and when the surface analysis is performed, the semiconductor detector is placed close to the sample mounted on the support table, A surface analysis and ion implantation device characterized in that when the ON is implanted, it is moved to a separated position.