JPH0627963Y2 - Solid-state imaging device - Google Patents
Solid-state imaging deviceInfo
- Publication number
- JPH0627963Y2 JPH0627963Y2 JP1987175552U JP17555287U JPH0627963Y2 JP H0627963 Y2 JPH0627963 Y2 JP H0627963Y2 JP 1987175552 U JP1987175552 U JP 1987175552U JP 17555287 U JP17555287 U JP 17555287U JP H0627963 Y2 JPH0627963 Y2 JP H0627963Y2
- Authority
- JP
- Japan
- Prior art keywords
- glass plate
- solid
- image pickup
- state imaging
- imaging device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Description
【考案の詳細な説明】 (イ)産業上の利用分野 本考案は固体撮像装置に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a solid-state imaging device.
(ロ)従来の技術 固体撮像装置の基本構造は、例えば日経マイクロデバイ
スの1987年8月号第40頁乃至第41頁に開示されているよ
うに、接続端子ピンを両側に配置したパッケージの凹所
内に撮像素子を配して電気的接続を為し、必要に応じて
撮像素子上に色分離フィルタを貼り合わせた後、その上
面に保護用のガラス板を配設したものである。(B) Prior Art The basic structure of a solid-state image pickup device is, for example, as disclosed in Nikkei Microdevice August 1987 issue, pages 40 to 41, a recess of a package in which connection terminal pins are arranged on both sides. An image pickup device is arranged in the place to make electrical connection, and if necessary, a color separation filter is attached on the image pickup device, and then a protective glass plate is arranged on the upper surface thereof.
また、斯る固体撮像装置においては、その搬送時にキズ
の生じる虞れがあるため、これを防止すべくガラス板を
含む固体撮像装置の表面に保護フィルムを貼り付けてい
る。In addition, in such a solid-state imaging device, there is a risk that scratches may occur during transportation, so in order to prevent this, a protective film is attached to the surface of the solid-state imaging device including the glass plate.
(ハ)考案が解決しようとする問題点 こうした固体撮像装置では、その使用時に際して当然、
表面から保護フィルムを剥離することになるが、この場
合、ガラス板が帯電することがある。また、固体撮像装
置を組み込んだ機器が固体撮像装置近傍で帯電すると、
その影響を受けてガラス板も帯電することになる。(C) Problems to be solved by the invention In such a solid-state imaging device, of course, when using it,
The protective film is peeled off from the surface, but in this case, the glass plate may be charged. Also, if a device incorporating the solid-state imaging device is charged near the solid-state imaging device,
Under the influence, the glass plate is also charged.
この帯電により、ガラス板の表面にホコリが付着し易く
なり、ホコリの付着によって光電変換特性を低下させ
る。また、より強い帯電が生じると、電荷転送動作が妨
害され、信号出力特性の劣化を招く。更に、斯る帯電は
ガラス板全体ではなく局部的に発生し、撮像画面を不鮮
明なものとする。Due to this charging, dust easily adheres to the surface of the glass plate, and the adhesion of dust deteriorates the photoelectric conversion characteristics. Further, when stronger charging occurs, the charge transfer operation is disturbed and the signal output characteristic is deteriorated. Further, such electrification occurs locally rather than on the entire glass plate, making the imaging screen unclear.
そこで、本考案の目的は、撮像素子上の局部的な帯電
を、更には帯電自体を防止することにある。Therefore, an object of the present invention is to prevent local electrification on the image pickup device, and further, electrification itself.
(ニ)問題点を解決するための手段 本考案は、撮像素子上にガラス板を配設した固体撮像装
置において、上記ガラス板表面の上記撮像素子と対向す
る部分には面状に、その他の部分には線状に導電性薄膜
を形成したことを特徴とする。(D) Means for Solving the ProblemsThe present invention is directed to a solid-state image pickup device in which a glass plate is arranged on an image pickup device, and a portion of the surface of the glass plate facing the image pickup device is planarly shaped, and It is characterized in that a conductive thin film is linearly formed on the portion.
(ホ)作用 本考案によれば、ガラス板表面に形成された導電性薄膜
のうち、撮像素子と対向する部分に形成された面状部が
この部分での局部的な帯電の発生を防止し、また線状部
がそれ自身の自己放電によりガラス板上の帯電を消滅さ
せる。(E) Function According to the present invention, the planar portion formed in the portion of the conductive thin film formed on the surface of the glass plate facing the image sensor prevents local charging at this portion. Also, the linear portion extinguishes the charge on the glass plate by its own self-discharge.
(ヘ)実施例 図は本考案の一実施例を示す分解斜視図である。(F) Embodiment FIG. 1 is an exploded perspective view showing an embodiment of the present invention.
(1)はその表面中央に所定大きさの凹所(2)を有するセラ
ミックパッケージ、(3)(3)…はこのセラミックパッケー
ジ(1)の長手方向の両側に配列された接続端子ピン、(4)
はセラミックパッケージ(1)の凹所(2)内に配置接着され
たCCDから成る撮像素子、(5)(5)…は接続端子ピン
(3)(3)…に連なるフレーム電極(6)(6)…と撮像素子(4)
とを電気的に接続するボンディングワイヤ、(7)は撮像
素子(4)の上方に配され、撮像素子(4)を封止するガラス
板、(8)はこのガラス板(7)の表面に形成された導電性薄
膜であり、撮像素子(4)と対向する部分の面状部(8a)と
その他の部分のストライプ状の線状部(8b)とから成る。(1) is a ceramic package having a recess (2) of a predetermined size in the center of its surface, (3) (3) ... is a connection terminal pin arranged on both sides of the ceramic package (1) in the longitudinal direction, Four)
Is an image sensor consisting of a CCD that is placed and adhered in the recess (2) of the ceramic package (1), and (5) (5) ... are connection terminal pins.
(3) Frame electrodes (6) (6) connected to (3) ... and image sensor (4)
A bonding wire for electrically connecting to, (7) is arranged above the image sensor (4), a glass plate for sealing the image sensor (4), (8) is a surface of the glass plate (7). The formed conductive thin film is composed of a planar portion (8a) facing the image sensor (4) and a striped linear portion (8b) at the other portion.
この導電性薄膜(8)の材料としては、酸化インジウム錫
(ITO)、酸化インジウム(In2O3)、酸化錫(Sn
O2)等の十分な光透過性を有するものを使用することが
でき、ガラス板(7)の表面全面に数千Åの膜厚に一様に
形成された後、面状部(8a)と線状部(8b)とから成る形状
にエッチングされる。なお、線状部(8b)は幅を数μm〜
数十μmとし、ピッチを数mm程度とされる。Materials for the conductive thin film (8) include indium tin oxide (ITO), indium oxide (In 2 O 3 ), tin oxide (Sn
O 2 ), which has a sufficient light transmission property, can be used, and after the glass plate (7) is uniformly formed with a film thickness of several thousand Å on the entire surface, the planar portion (8a) And a linear portion (8b). The width of the linear part (8b) is several μm
The pitch is about several tens of μm and the pitch is about several mm.
而して、斯る構造によれば、撮像素子(4)と対向するガ
ラス板(7)の表面に形成された導電性薄膜(8)の面状部(8
a)により、この部分は局部的に帯電されず、略同電位と
なる。また、帯電が進むと、線状部(8b)における電界が
空気の絶縁破壊強度を越えてコロナ放電が生じることに
より、ガラス板上の帯電が消滅する。Thus, according to such a structure, the planar portion (8) of the conductive thin film (8) formed on the surface of the glass plate (7) facing the image pickup element (4)
Due to a), this part is not locally charged and has approximately the same potential. Further, as the charging progresses, the electric field in the linear portion (8b) exceeds the dielectric breakdown strength of air and corona discharge occurs, so that the charging on the glass plate disappears.
なお、線状部(8b)はストライプ状に限らず、格子状でも
良い。The linear portion (8b) is not limited to the stripe shape and may be a lattice shape.
(ト)考案の効果 本考案によれば、ガラス板表面に面状部と線状部とから
成る導電性薄膜を形成したので、撮像素子と対向する部
分のガラス板での局部的な帯電をなくすると共に、自己
放電による帯電の消滅を生ぜしめることができ、よっ
て、信号出力特性の劣化や撮像画面の不鮮明さを防止
し、ホコルの付着を抑制し得る。(G) Effect of the Invention According to the present invention, since the conductive thin film composed of the planar portion and the linear portion is formed on the surface of the glass plate, local charging of the glass plate in the portion facing the image sensor is prevented. At the same time, it is possible to eliminate the charge and to eliminate the charge due to self-discharge. Therefore, it is possible to prevent the deterioration of the signal output characteristics and the blurring of the image pickup screen, and to suppress the adhesion of the dust.
図は本考案の一実施例を示す分解斜視図であり、(4)は
撮像素子、(7)はガラス板、(8)は導電性薄膜である。FIG. 1 is an exploded perspective view showing an embodiment of the present invention, in which (4) is an image sensor, (7) is a glass plate, and (8) is a conductive thin film.
Claims (1)
装置において、 上記ガラス板表面の上記撮像素子と対向する部分には面
状に、その他の部分には線状に形成され且つ上記ガラス
板表面で終端し他の部分と電気的に接続されていない導
電性薄膜を、 有することを特徴とする固体撮像装置。1. A solid-state image pickup device in which a glass plate is arranged on an image pickup device, wherein a portion of the surface of the glass plate facing the image pickup device is formed in a planar shape, and the other portion is formed in a linear shape. A solid-state imaging device, comprising: a conductive thin film that terminates at a glass plate surface and is not electrically connected to other portions.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987175552U JPH0627963Y2 (en) | 1987-11-17 | 1987-11-17 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1987175552U JPH0627963Y2 (en) | 1987-11-17 | 1987-11-17 | Solid-state imaging device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0179858U JPH0179858U (en) | 1989-05-29 |
JPH0627963Y2 true JPH0627963Y2 (en) | 1994-07-27 |
Family
ID=31467341
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1987175552U Expired - Lifetime JPH0627963Y2 (en) | 1987-11-17 | 1987-11-17 | Solid-state imaging device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0627963Y2 (en) |
-
1987
- 1987-11-17 JP JP1987175552U patent/JPH0627963Y2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0179858U (en) | 1989-05-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1132968A3 (en) | Imager structure | |
EP0916992A3 (en) | A liquid crystal display device | |
JPH0627963Y2 (en) | Solid-state imaging device | |
JPS61122684A (en) | Display unit | |
JP2583897B2 (en) | Solid-state imaging device and driving method thereof | |
JPH0744026Y2 (en) | Image sensor | |
JPH0635479Y2 (en) | Solid-state imaging device | |
JPS63120464A (en) | Solid-state image pickup device | |
JPH0565877B2 (en) | ||
JPS6392923A (en) | Liquid crystal display device | |
JPS6419324A (en) | Active matrix type liquid crystal display panel | |
JPH0626247B2 (en) | Method of manufacturing image sensor | |
JPH0329368A (en) | Solid-state image-pickup device | |
JP3028546B2 (en) | Solid-state imaging device and method of manufacturing the same | |
JPS6015149Y2 (en) | Pyroelectric infrared detection element | |
JPH0522517A (en) | Contact type image sensor | |
CN117766611A (en) | Light Fu Mopian assembly, housing assembly of electronic equipment and electronic equipment | |
JPH02105571A (en) | Solid state image pickup device | |
JPS61232642A (en) | Optical semiconductor device | |
JPS597818Y2 (en) | Imaging device | |
JP2553810Y2 (en) | Panel with electric field shielding anti-reflection multilayer film | |
JPS58213467A (en) | Soild state image pickup device | |
JPH0441456B2 (en) | ||
JPS6134970A (en) | Photo sensor | |
TW200825596A (en) | Pixel array module and flat display apparatus |