JPH06273958A - Electrophotographic sensitive body and its production - Google Patents

Abstract

PURPOSE:To provide the electrophotographic sensitive body of amorphous silicon having a small local level density with which peeling of photosensitive body films is prevented, optical memories are well removed and images having overall high quality free from image defects are obtd. and the process for production thereof. CONSTITUTION:The stress ratio in the thickness direction of the microparts of the charge implantation blocking layer 202 and photoconductive layer 203 of the photosensitive body of the amorphous silicon having the region where the local level density n per volume attains >=1X10<15>cm<-3> at <=10% of the film thickness of the photoconductive layer 203 and <=2mum is controlled and particularly the stress ratio in the boundary part of the charge implantation blocking layer 202 and photoconductive layer 203 is controlled by the process for production of continuously changing an electric discharge power and/or continuously elevating a substrate temp., etc., at the time of forming the charge implantation blocking layer 202 and the photoconductive layer 203, by which the good optical memory characteristic is obtd. and the peeling of the films and image defects, such as drop-out, are prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrophotographic photoconductor and a method for producing the same for the purpose of reducing image defects.

[0002]

2. Description of the Related Art Amorphous silicon type photoconductors (hereinafter a)
-Si photosensitive member. ) Is highly prized as an electrophotographic photoreceptor for high-speed copying machines, laser beam printers, etc. due to its characteristics such as high durability and high photosensitivity.

2A and 2B are schematic cross-sectional views showing the structure of a typical a-Si photosensitive member. In this figure, (A) is a so-called single-layer type photoreceptor in which the photoconductive layer is not functionally separated, and (B) is a functional separation in which the photoconductive layer is separated into a charge generation region and a charge transport region. Type photoconductor.

The a-Si photoconductor shown in FIG. 2A has a charge injection blocking layer 202 and a photoconductive layer 203 which are sequentially deposited on a conductive support 201 made of aluminum (Al) or the like.
And a surface layer 204. Here, the charge injection blocking layer 2
02 is for suppressing the injection of charges from the conductive support 201 to the photoconductive layer 203.

The photoconductive layer 203 is made of an amorphous material containing at least silicon atoms and exhibits photoconductivity. Further, the surface layer 204 is made of silicon atoms and carbon atoms (and hydrogen atoms and / or halogen atoms as required).
It has the ability to suppress the injection of charges from the surface and stabilize the image in electrophotography.

In the a-Si photoconductor shown in FIG. 2B, the photoconductive layer 203 has a charge transport region 206 composed of an amorphous material containing at least silicon atoms, and an amorphous material containing at least silicon atoms. This is a function-separated type in which charge generation regions 205 made of a material are sequentially stacked. When this photosensitive member is irradiated with light, carriers mainly generated in the charge generation region 205 pass through the charge transport region 206 and reach the conductive support 201.

The photosensitive member is formed by a plasma CVD method (hereinafter referred to as P
-CVD method).

Next, an apparatus and a forming method for forming a deposited film by the P-CVD method will be described in detail.

FIG. 3 shows an example of an apparatus for manufacturing an electrophotographic photoreceptor by the P-CVD method.

An apparatus for producing a deposited film by the P-CVD method is
From the deposition device 3100, the source gas supply device 3200, the exhaust device (not shown) for reducing the pressure of the reaction vessel 3111 in the deposition device 3100, the power supply (not shown) that outputs discharge power, and the matching box 3115. It is configured.

Here, a cylindrical support 3112, a support heater 3113, and a source gas introduction sensation 3114 are installed in the reaction vessel 3111. The raw material gas supply device 3200 includes cylinders 3221 to 326 of raw material gases such as SiH _4, H _2, CH _4, NH _{3, and} SiF ₄ , valves 3231 to 236, and inflow valves 3241 to 322.
46 Each of the outflow valves 3251 to 2566 and each of the mass flow controllers 3211 to 3216, and the gas cylinders 3221 to 3226 of each source gas are the auxiliary valves 3
Gas introduction pipe 311 in reaction vessel 3111 via 260
4 is connected.

With this manufacturing apparatus, a photoreceptor is prepared as follows.

When the cylindrical support 3112 reaches a predetermined temperature, the necessary one of the outflow valves 3251 to 256 and the auxiliary valve 3260 are opened, and the reaction vessel 311 is opened.
1, the pressure inside the reaction vessel 3111 is 1 Tor.
The main valve 3118 is adjusted while observing the vacuum gauge 3119 so that the predetermined pressure is equal to or lower than r, and after the internal pressure is stabilized, the power supply is set to a desired power, and the matching box 3
Discharge power is introduced into the reaction vessel 3111 through 115 to cause glow discharge. By this discharge, each raw material gas in the reaction vessel 3111 is decomposed, and the cylindrical support 3
A deposited film containing a predetermined amorphous silicon as a main component is formed on 112. After the desired film thickness is formed, the supply of the discharge power is stopped and the formation of the deposited film is completed.

By repeating the same operation a plurality of times,
A photoreceptor having a desired multi-layer structure is formed.

During the film formation, the support 3112 may be rotated at a predetermined speed by a driving device (not shown).

FIG. 4 is a schematic configuration diagram showing a main part of an example of an electrophotographic apparatus using an a-Si photosensitive member.

In this electrophotographic apparatus, the a-Si photosensitive member 4
A main charger 402 that uniformly charges the photoconductor 401 around 01 and image information giving means (not shown) that emits image exposure light 403 according to image information to form an electrostatic latent image.
And a blank exposure 407 that eliminates static electricity on a portion of the photoconductor 401 where there is no image information, that is, between the transfer material and the transfer material.
And a developing device 4 for developing the electrostatic latent image to make it visible.
04, a transfer charger (not shown) for transferring the visible image onto a transfer material, a separating means (not shown) for separating the transfer material from the a-Si photoconductor 401, and a cleaning device 405. The main charge eliminating light 406 is provided in order at a predetermined interval in the circumferential direction of the photoconductor 401.

In the electrophotographic apparatus as described above, the photoconductor 40
1 is rotated at a predetermined rotation speed, and the main charger 402, the image exposure light 403, the developing device 404, the cleaning device 405,
When charging, development, and static elimination are repeated by the main static elimination light 406 blank exposure 407 and the like, the exposure of one round or a plurality of rounds before the photosensitive body affects the image, and an optical memory is generated.

In general, in order to remove an optical memory, the photoconductive property of the a-Si photoconductor having a multilayer structure as described above is measured at 0.55 to 0.95 eV from the mobility end on the valence band side. It is known that the localized level density n per layer volume is involved in the optical memory of an electrophotographic apparatus. The potential difference on the surface of the photoconductor due to the history of light in the front circumference is called an optical memory potential. By controlling the n to be 1 × 10 ¹⁵ cm ⁻³ or less, the optical memory potential becomes 10 V or less, A high quality image without the optical memory can be obtained.

[0020]

However, when a photoconductor having a photoconductive layer having an n of 1 × 10 ¹⁵ cm ^-3 or less is formed by the above-mentioned method, the film of the photoconductor peels off. Alternatively, there is a problem that an image defect such as white spots in an image is considered, which is considered to be caused by the same cause.

Conventionally, in order to cope with the peeling, a method of reducing the stress of the whole film is taken, such as lowering the substrate temperature and / or lowering the discharge power and / or increasing the boron (B) content. Has been.

The method of reducing the stress of the film itself has a tendency that the localized level density n per volume generally increases, which is inconsistent with the above-mentioned direction of reducing the localized level density. These methods have a problem that they affect the electrophotographic characteristics and make it impossible to obtain an image of good quality.

[Object of the Invention] The object of the present invention is to solve the above-mentioned problems, and removes film peeling due to stress in a good state of an optical memory, and is a high-quality electrophotography without image defects. To provide a photoreceptor for use.

[0024]

The gist of the present invention is due to the peeling of the film by controlling the localized level density n of the photoconductive layer in the photoconductor and the film forming method of the photoconductor. An object of the present invention is to provide an electrophotographic photosensitive member using an a-Si photosensitive member having no image defect. The stress ratio between the charge injection blocking layer and the photoconductive layer adjacent to each other in the thickness direction is set to 1 It can be achieved by setting the ratio to 5 or less.

It has been found that it is effective to control the density of localized levels in order to increase the traveling property of photocarriers in the photoconductor, especially in the photoconductive layer, and obtain a high quality image.

If an attempt is made to reduce n in the photoconductive layer by the conventional method, peeling of the photoconductor film occurs and / or image defects such as white spots occur.

The present inventors have discovered that this peeling occurs at the interface between the charge injection blocking layer and the photoconductive layer, and the stress in the photoconductive layer is larger than that in the charge injection blocking layer. I thought it was because of a sudden. In view of this point, as a result of extensive research and study, in the photoreceptor in which the stress does not change or increases monotonically in the thickness direction, the stress in the thickness direction from the charge injection blocking layer to the photoconductive layer, By making the stress at a position adjacent to the lower side of the position 1.5 times or less, there is no peeling,
It was discovered that it is possible to form a photoconductor film that can obtain high-quality images.

Further, when the photoconductive layer is formed from the charge injection blocking layer, the discharge power is continuously changed so that the photoconductor can be formed without peeling and a high quality image can be obtained. I have found

Further, it was discovered that by continuously changing the substrate temperature in the initial stage of film formation of the photoconductive layer, it is possible to form a film of a photoreceptor capable of obtaining a high-quality image without peeling. .

[0030]

The electrophotographic photoconductor using the a-Si photoconductor of the present invention and the method for forming the photoconductor for the electrophotographic photoconductor have the following characteristics: the charge injection blocking layer of the photoconductor and the stress between the layers in the photoconductive layer. , And / or control by controlling the discharge power, thereby removing the optical memory to a good level, and keeping the deterioration of the charging characteristics and the deterioration of electrical characteristics such as potential shift, to a minimum, Eliminates image defects and film peeling,
A high quality image can be obtained.

[Experimental Example] The operation of the present invention will be described below in detail with reference to the accompanying drawings.

In the following experimental examples and examples, the photoconductor and the sample were prepared as follows.

In preparing the photoconductor and the sample, a cylindrical Al substrate (hereinafter referred to as an Al cylinder) which is a support of the photoconductor and an Al thin plate for the sample are degreased and washed,
The surface is mirror finished. Further, the insulating glass substrate was degreased and washed.

Both the photoconductor and the sample were plasma-enhanced by CVD.
It was created by a method (hereinafter referred to as a P-CVD method).

Next, the apparatus and method for forming the deposited film by the P-CVD method will be described in detail.

FIG. 3 shows an example of an apparatus for manufacturing an electrophotographic photoreceptor by the P-CVD method.

An apparatus for producing a deposited film by the P-CVD method is
From the deposition device 3100, the source gas supply device 3200, the exhaust device (not shown) for reducing the pressure of the reaction vessel 3111 in the deposition device 3100, the power supply (not shown) that outputs discharge power, and the matching box 3115. It is configured.

Here, a cylindrical support 3112, a support heater 3113, and a source gas introduction sensation 3114 are installed in the reaction vessel 3111. The raw material gas supply device 3200 includes cylinders 3221 to 326 of raw material gases such as SiH _4, H _2, CH _4, NH _{3, and} SiF ₄ , valves 3231 to 236, and inflow valves 3241 to 322.
46 Each of the outflow valves 3251 to 2566 and each of the mass flow controllers 3211 to 3216, and the gas cylinders 3221 to 3226 of each source gas are the auxiliary valves 3
Gas introduction pipe 311 in reaction vessel 3111 via 260
4 is connected.

A photoconductor is produced by the manufacturing apparatus as follows.

When the cylindrical support 3112 reaches a predetermined temperature, the necessary one of the outflow valves 3251 to 256 and the auxiliary valve 3260 are opened, and the reaction vessel 311 is opened.
1, the pressure inside the reaction vessel 3111 is 1 Tor.
The main valve 3118 is adjusted while observing the vacuum gauge 3119 so that the predetermined pressure is equal to or lower than r, and after the internal pressure is stabilized, the power supply is set to a desired power, and the matching box 3
Electric power is introduced into the reaction vessel 3111 through 115 to cause glow discharge. By this discharge, the reaction container 31
Each raw material gas in 11 is decomposed, and the cylindrical support 3112
A deposited film containing a predetermined amorphous silicon as a main component is formed thereon. After the desired film thickness is formed, the supply of the discharge power is stopped and the formation of the deposited film is completed.

By repeating the same operation a plurality of times,
A photoreceptor having a desired multi-layer structure is formed.

During the film formation, the support 3112 may be rotated at a predetermined speed by a driving device (not shown).

When preparing a sample, a substrate holder of the same size was used instead of the cylindrical support 3112,
The substrate was fixed to the holder and prepared in the same manner as the above photoconductor.

Experimental Example 1 (Stress Measurement / Pw Change) As a sample for stress measurement, a sample on an Al thin plate (hereinafter referred to as an aluminum sample) was prepared.

Unless otherwise specified, the total thickness of the photoconductor formed here is 29 μm (of which, the photoconductive layer 25.5 μm).
m), the sample on the aluminum thin plate and the sample on the glass substrate are obtained by forming a part of the photoconductive layer from the charge injection blocking layer.

The aluminum sample was formed by forming a part of the photoconductive layer from the charge injection blocking layer, and the standard preparation conditions were as follows.

The conditions for forming the charge injection blocking layer are NO / Si.
H ₄ = 0.33, H ₂ / SiH ₄ = 4.0, B ₂ H ₆ /
NO, H ₂ , B so that SiH ₄ = 1500 ppm
₂ H ₆ and SiH ₄ were mixed. The internal pressure of the furnace is 0.45To
rr, substrate temperature 315 ° C., high frequency power 100 W
And

The film forming conditions for the photoconductive layer are H ₂ / SiH ₄ =
1.7, B ₂ H ₆ / SiH ₄ = 0.55 ppm H ₂ , B ₂ H ₆ and SiH ₄ were mixed. The internal pressure of the furnace was 0.57 Torr, the substrate temperature was 315 ° C., and the high frequency power was 600 W.

In the experiments of the present invention, the preparation conditions were changed with respect to the standard preparation conditions. Specifically, after the charge injection blocking layer is formed, when the film formation of the photoconductive layer is started, the supply of the discharge power is not stopped, and the valves in FIG. 3 are adjusted immediately so that the reaction gas is used for the photoconductive layer. Readjust, discharge power at a predetermined rate,
Assuming the case of forming a film of a photoconductor continuously increased up to 600 W, samples corresponding to the respective parts were prepared. The conditions other than the discharge power, such as the gas flow rate, the internal pressure, and the substrate temperature, were the same as the standard preparation conditions.

After forming the charge injection blocking layer, the discharge power supply is once stopped, the valves in FIG. 3 are adjusted, the reaction gas is adjusted again for the photoconductive layer, and then the discharge power supply is 600 W. Then, a sample corresponding to a part of the photoconductor under the so-called standard preparation conditions, in which the film formation was started again, was prepared.

[Measurement of Stress Ratio] The reciprocal of the radius of curvature of the Al substrate was measured as the value corresponding to the stress of the prepared aluminum sample. Further, these samples were continuously formed into films in various combinations, and the state of peeling with respect to the stress ratio R was measured. However, the stress was higher in the upper film.

The rate of peeling was defined as the ratio of the number of peeled samples to the total number of samples under the same stress ratio.

The stress ratio R was measured by the following method.

FIG. 5 is a schematic view showing a method of measuring the stress ratio R used in the present invention.

This apparatus is provided with a sample to be measured 5 such as an Al substrate.
00 and a holder 501 for fixing the Al substrate sample 500, and a stylus type measurement portion 502 for measuring the strain of the Al substrate 500.

The Al substrate 500 is fixed to the holder 501 before the upper layer sample is formed, and the strain of the substrate at that time is measured to calculate the reciprocal r ₀ of the radius of curvature.

Next, after forming a part (k) in the region of the photoconductive layer from the charge injection blocking layer on the Al substrate 500, the same measurement is performed. The difference between the reciprocal of the radius of curvature r ₁ at this time and the radius of curvature r ₀ when only the Al substrate is r _k .

Next, a layer (k + 1) adjacent to the upper part of k in the thickness direction is further formed by the same thickness as k, and measurement is performed in the same manner as k. The difference between and is r _{k + 1} .

R _k / r consisting of these r _k and r _{k + 1
The} stress ratio R was _{k + 1} .

For peeling, the surface of the sample was examined under a microscope.

The results are shown in FIG. 1 (A).

An electrophotographic photosensitive member was prepared by changing the discharge power change profile to form a charge injection blocking layer, a photoconductive layer, and then a surface layer. The surface layer formulation is fixed.

With respect to image defects such as white spots, image evaluation of the electrophotographic photoconductor thus prepared was carried out by Canon NP6060.
By modifying Canon test sheet FY9-9042-
020 was used.

Further, the image defect occurrence rate is obtained by copying a black original and determining the total number of defects having a diameter of 1 mm or more on the image of 10 or more, or the number of photoconductors having an image defect area of 8.0 mm ² or more, It was defined as the ratio of the total number of photoreceptors prepared by the same formulation.

FIG. 1B shows the maximum value Rmax of the stress ratio and the image defect occurrence rate of the photoconductor thus prepared.

As a result, in the sample in which the stress ratio R falls within the range of 1.5 or less, there is no peeling, and when it deviates from the above range, peeling was observed.

The maximum value Rmax of the stress ratio R is 1.5.
No image defects were observed in the following photoconductors, and image defects were found in the photoconductors including a portion deviating from the above range.

[Experimental Example 2] (Stress measurement / Ts change) The substrate temperature was changed to prepare an aluminum sample for stress measurement.

Similar to Experimental Example 1, the aluminum sample is part of the photoconductive layer from the charge injection blocking layer.

In the experiment of the present invention, the preparation conditions were changed with respect to the standard preparation conditions. Specifically, a sample in which the substrate temperature was kept at 315 ° C. from the initial stage of film formation, and when the charge injection blocking layer was formed, the substrate temperature was lower than the standard preparation condition, and in this experimental example, at 290 ° C. A sample corresponding to each part of the photoconductor was prepared in which the substrate temperature was kept at 315 ° C. by holding the substrate temperature continuously at a predetermined rate during film formation of the photoconductive layer. Conditions other than temperature, such as gas flow rate and internal pressure, were the same as the standard preparation conditions.

The stress was measured for each aluminum sample prepared.

The stress ratio R and the peeling condition were measured by
It measured by the method similar to what was shown in Experimental example 1.

In the electrophotographic photoreceptor, the charge injection blocking layer and the photoconductive layer are formed by changing the temperature change profile of the substrate as in Experimental Example 1, and the surface layer is further formed. Created by. The surface layer formulation is fixed.

With respect to image defects such as white spots, the image evaluation of the electrophotographic photosensitive member thus prepared was carried out by modifying Canon NP6060, and using Canon test sheet FY9-9042-0.
20 was used.

The image defect occurrence rate was measured in the same manner as in Experimental Example 1.

FIG. 1 (A) shows the stress ratio R and the peeling occurrence rate, FIG. 1 (B) shows the peeling condition of the photoconductor prepared, and the maximum value Rmax of the stress ratio.

As a result, the continuous rise of the substrate temperature affects the stress ratio R, and the samples with the stress ratio R within the range of 1.5 or less did not peel, and the samples deviating from the above range showed the peeling. .

Further, there was no image defect in the photosensitive member having the maximum stress ratio Rmax of 1.5 or less, and the image defect was observed in the photosensitive member having the maximum stress ratio Rmax of 1.5 or more.

The sample in which the substrate temperature was kept at 315 ° C. from the initial stage of film formation had a larger Rmax than the sample in which the substrate temperature was raised after the start of film formation of the photoconductive layer.
Image defects were seen. Some samples were confirmed to be peeled off.

Experimental Example 3 (Localized Level Density Measurement / Pw Change) Samples on the glass substrate (hereinafter referred to as glass samples) were prepared for optical measurement and electrical measurement.

The film thickness of the glass sample was 1.0 μm, and samples corresponding to the respective parts in the thickness direction of the photoconductive layer were formed.

As a standard preparation condition for glass samples, H
₂ / SiH ₄ = 1.7, B ₂ H ₆ / SiH ₄ = 0.55
As a ppm were mixed _{H 2, B 2 H 6,} SiH 4. Furnace internal pressure 0.57 Torr, substrate temperature 315
C. and power was 600 W.

In the experiments of the present invention, the preparation conditions were changed. Specifically, the discharge power is 600 W from the beginning of film formation.
The sample held at 1 and the discharge power at the start of film formation was set to 1
A sample corresponding to a part of the photoconductor was set to 00 W, and the discharge power was continuously increased at a predetermined rate to 600 W, and a sample was prepared for each part of the photoconductive layer. Also,
At the time of preparation, the conditions other than the discharge power were the same as the standard preparation conditions.

The localized level density n of the prepared glass sample was measured by the constant photocurrent method (CPM).

The CPM irradiates the sample with single wavelength light,
A method of measuring the amount of light that keeps the photocurrent at each wavelength constant. By this method, a slightly deeper level on the valence band side (0.55 to 0.95 eV from the mobility end on the valence band side) is obtained. In this, the localized level density n per volume is obtained.

For the sample for CPM measurement, a comb-shaped electrode of chromium (Cr) was vapor-deposited at 1000 A after the film formation, and the measurement was performed.

Further, an electrophotographic photoreceptor having a photoconductive layer under the same conditions as the glass sample was prepared in all parts. The conditions for forming the charge injection blocking layer and the surface layer are fixed.

Further, a photosensitive member having a photoconductive layer having a film thickness of 25.5 μm or more was prepared.

Regarding optical memory, Canon NP60
No. 60 was modified and the optical memory potential on the surface of the photoconductor was measured. In addition, Canon test sheet FY9-9042-
020 and FY9-9040-000 were used to perform image determination on the above-described photoconductor.

In the same judgment, the image densities of the optical memory and the other areas on the image are measured with a densitometer, and the density ratio is calculated by (image density of the optical memory area) / (image density of the non-optical memory area) It was done by asking for.

FIG. 6A shows the ratio of the region where the localized level density n is 1 × 10 ¹⁵ cm ⁻³ or more to the thickness of the photoconductive layer and the optical memory potential. And the localized level density n
^Shows the thickness and the optical memory potential in the region of 1 × 10 ¹⁵ cm ⁻³ or more, and FIG. 6C shows the optical memory potential and the density ratio on the image.

As a result, the thickness of the region where the localized level density n is 1 × 10 ¹⁵ cm ⁻³ or more with respect to the thickness of the photoconductive layer is 2 μm.
Even when the ratio was m or less, the optical memory potential was 10 V or more in the photoconductor having the ratio of 10% or more.

When the optical memory potential was 10 V or less, the image density ratio was almost 1, and it was judged that there was no optical memory. On the other hand, when the optical memory potential was 10 V or more, the image density ratio decreased from 1 and an optical memory was confirmed.

The localized level density n is 1 × 10 ¹⁵ c
The photoconductor having a thickness of 2 μm or more in the region of m ⁻³ or more had an optical memory potential of 10 V or more and an optical memory was observed even if the ratio was 10% or less.

From the above, the localized level density n is 1 × 10 ¹⁵ cm in the region where the rate of change of the discharge power is 10% and 2 μm or less, preferably 5% and 1 μm or less of the film thickness of the photoconductive layer.
^-It is suitable for removing optical memory when the speed is below ^-3 .

Similarly, with respect to the substrate temperature, the localized level density n with respect to the thickness of the photoconductive layer is 1 × 10 ¹⁵ cm.
^-The ratio of the area of ³ or more is 10% or less, and the thickness of the area is 2
The photoconductor having a thickness of μm or less had an optical memory potential of 10 V or less, and a high quality image without the optical memory was obtained.

By controlling the discharge power, the substrate temperature, etc. and changing the stress to a region below 1000 A of the photoconductive layer, better results were obtained for both optical memory and image defects.

From the above Experimental Examples 1 to 3, the following was found.

By controlling the stress ratio R of the film within the range of 1.5 or less, the necessity of reducing the stress itself is reduced, and image defects and peeling are prevented while the optical memory is removed in a good state. As a result, a high quality photoconductor film capable of obtaining a high quality image can be obtained.

When the region where the localized level density n is 1 × 10 ¹⁵ cm ⁻³ or more is 10% of the film thickness of the photoconductive layer and 2 μm or less, a high quality image can be obtained, and preferably 5% and 1 μm or less. Then, a better image can be obtained.

The discharge power and the substrate temperature may be changed at the same time, or the stress ratio may be changed by another method.

The electroconductive substrate used in the present invention eliminates an image defect due to a so-called interference fringe pattern that appears in a visible image in the case of an electrophotographic photosensitive member using coherent light such as laser light. In order to achieve this, unevenness may be provided on the surface.

[0103]

EXAMPLES Examples of the present invention will now be described in detail with reference to the tables and drawings, but the present invention is not limited to the examples shown below, and the objects of the present invention can be achieved. If it is good.

Unless otherwise specified, the photoconductor film formation conditions are the same as the reference preparation conditions described in the experimental examples, and the photoconductive layer thickness is 25.5 μm.

The formulation for forming the surface layer is fixed.

Example 1 After the substrate temperature was kept at 290 ° C., the charge injection blocking layer 202 was formed with the discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer using a valve, the discharge power supply was not stopped, and the photoconductive layer was continuously changed to 600 W while the photoconductive layer was formed to a thickness of 0.10 μm. In synchronization with the start of film formation, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to 1.0 μm, and the photoconductive layer 203 was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The photoconductor thus prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

Example 2 After the substrate temperature was kept at 290 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer using a valve, the discharge power was not stopped, and the photoconductive layer was continuously changed to 600 W while the photoconductive layer was formed to a thickness of 1.0 μm. In synchronization with the start of film formation, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to 1.0 μm, and the photoconductive layer 203 was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The photoconductor thus prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

Example 3 After the substrate temperature was kept at 290 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer using a valve, the discharge power supply was not stopped, and the photoconductive layer was continuously changed to 600 W while the photoconductive layer was formed to a thickness of 2.0 μm. In synchronization with the start of film formation, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to 1.0 μm, and the photoconductive layer 203 was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The produced photoreceptor is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

Example 4 After the thickness of the photoconductive layer was set to 30 μm and the substrate temperature was kept at 290 ° C., the charge injection blocking layer 2 was discharged with a discharge power of 100 W by the device shown in FIG.
Immediately after forming 02, the reaction gas was adjusted for the photoconductive layer by using each valve of FIG. 3, the supply of the discharge power was not stopped, and the photoconductive layer was formed to a thickness of 2.0 μm. , Continuously 6
The temperature was changed to 00 W, and in synchronization with the start of film formation of the photoconductive layer, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to 1.0 μm, and the photoconductive layer 203 was formed. After the photoconductive layer is formed, the supply of the discharge power is stopped, the valve of FIG. 3 is adjusted, and the surface layer 204 is formed by a-
A Si photoconductor was created.

The produced photoreceptor is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

[Embodiment 5] After the film thickness of the photoconductive layer was set to 10 μm and the substrate temperature was kept at 290 ° C., the charge injection blocking layer 2 was discharged with a discharge power of 100 W using the apparatus shown in FIG.
Immediately after forming 02, the reaction gas was adjusted for the photoconductive layer by using each valve in FIG. 3, the discharge power supply was not stopped, and the photoconductive layer was formed in a thickness of 1.0 μm. , Continuously 6
The temperature was changed to 00 W, and in synchronization with the start of film formation of the photoconductive layer, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to 1.0 μm, and the photoconductive layer 203 was formed. After the photoconductive layer is formed, the supply of the discharge power is stopped, the valve of FIG. 3 is adjusted, and the surface layer 204 is formed by a-
A Si photoconductor was created.

The photoreceptor prepared is Canon NP6060.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

Example 6 After the substrate temperature was maintained at 290 ° C., the charge injection blocking layer 202 was formed with the discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer by using a valve, the discharge power was not stopped, and the photoconductive layer was continuously changed to 600 W while the photoconductive layer was formed to a thickness of 0.05 μm. In synchronism with the start of film formation, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to a thickness of 1.5 μm, and the photoconductive layer 203 was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The photoconductor thus prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image free from peeling and image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

Example 7 After the substrate temperature was maintained at 290 ° C., the charge injection blocking layer 202 was formed with the discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer by using a valve, the discharge power was not stopped, and the photoconductive layer was continuously changed to 600 W while the photoconductive layer was formed to a thickness of 0.05 μm. The photoconductive layer is 0.10 μm in synchronization with the start of film formation
The substrate temperature was raised to 315 ° C. during the film formation to form the photoconductive layer 203. After the photoconductive layer is formed, the supply of the discharge power is stopped and the valve of FIG.
An a-Si photosensitive member was prepared by the method of forming a film.

The produced photoreceptor is Canon NP6060.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

[Embodiment 8] After the substrate temperature was kept at 290 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer by using a valve, the discharge power was not stopped, and the photoconductive layer was continuously changed to 600 W while the photoconductive layer was formed to a thickness of 0.05 μm. In synchronization with the start of film formation, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to a thickness of 2.0 μm, and the photoconductive layer 203 was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The photoconductor thus prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

[Embodiment 9] The film thickness of the photoconductive layer was 30 μm, the substrate temperature was kept at 290 ° C., and then the charge injection blocking layer 2 was discharged with a discharge power of 100 W by the device shown in FIG.
Immediately after forming 02, the reaction gas was adjusted for the photoconductive layer by using each valve of FIG. 3, the supply of the discharge power was not stopped, and the photoconductive layer was formed in a thickness of 0.05 μm. The temperature is continuously changed to 600 W, and in synchronization with the start of film formation of the photoconductive layer, the substrate temperature is raised to 315 ° C. while the photoconductive layer is formed to a thickness of 2.0 μm, and the photoconductive layer 203 is formed. Filmed
After the photoconductive layer is formed, the supply of discharge power is stopped and
By adjusting the valve and forming the surface layer 204
-Si photoconductor was prepared.

The photoconductor thus prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

[Embodiment 10] The film thickness of the photoconductive layer is 10 μm.
Then, after holding the substrate temperature at 290 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus of FIG. 3 shown in the experimental example, and immediately after using the valves of FIG. Is adjusted for the photoconductive layer, the discharge power is not stopped, and while the photoconductive layer is being formed to a thickness of 0.05 μm, it is continuously changed to 600 W and is synchronized with the start of the formation of the photoconductive layer. Then, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to a thickness of 1.0 μm, and the photoconductive layer 203 was formed. After the photoconductive layer is formed, the supply of discharge power is stopped,
An a-Si photoconductor was prepared by the method of adjusting the valve of FIG. 3 and forming the surface layer 204.

The photoconductor thus prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

[Embodiment 11] After the substrate temperature was maintained at 315 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus shown in FIG.
The reaction gas was adjusted for the photoconductive layer by using each valve of No. 1 and the discharge power was not stopped and the photoconductive layer was continuously changed to 600 W while the photoconductive layer was formed to a thickness of 0.05 μm. The layer 203 was deposited. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The photoconductor thus prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

[Embodiment 12] After the substrate temperature was maintained at 290 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus of FIG. 3 shown in the experimental example, and then the discharge power was once supplied. Immediately after stopping, the reaction gas was adjusted for the photoconductive layer by using each valve in FIG. 3, the discharge power supply was restarted at 600 W, and the photoconductive layer was turned on in synchronization with the start of the film formation of the photoconductive layer. The substrate temperature was raised to 315 ° C. during the film formation of 0.0 μm to form the photoconductive layer 203. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The photoconductor thus prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, it was possible to obtain a very high quality image without peeling or image defects while removing the optical memory at a very good level.

The results are shown in Table 1.

Comparative Example 1 After the substrate temperature was kept at 315 ° C., the charge injection blocking layer 20 was formed using the device shown in FIG.
2 is formed, the supply of the discharge power is stopped, the reaction gas is adjusted for the photoconductive layer by using each valve in FIG. 3, and the supply of the discharge power is restarted at 600 W to form the photoconductive layer 203. A film was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The photoconductor prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, peeling occurred on the film of the photoreceptor, and image defects such as white spots scattered on the image were observed even in the portion where peeling did not occur.

The results are shown in Table 1.

Comparative Example 2 After the substrate temperature was maintained at 290 ° C., the charge injection blocking layer 20 was formed using the device of FIG. 3 shown in the experimental example.
2 is formed, the supply of the discharge power is stopped, the reaction gas is adjusted for the photoconductive layer using each valve of FIG. 3, and the supply of the discharge power is restarted at 500 W to form the photoconductive layer 203. A film was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The photoreceptor prepared is Canon NP6060.
Was remodeled and image evaluation was performed.

As a result, neither peeling nor image defects were found, but optical memory was found.

The results are shown in Table 1.

Comparative Example 3 After the substrate temperature was kept at 290 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer by using a valve, the discharge power supply was not stopped, and the photoconductive layer was continuously changed to 600 W during the film formation of 3.0 μm. In synchronization with the start of film formation, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to 1.0 μm, and the photoconductive layer 203 was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The produced photoconductor is Canon NP6060.
Was remodeled and image evaluation was performed.

As a result, there was no peeling or image defect, but an optical memory was observed.

The results are shown in Table 1.

Comparative Example 4 After the substrate temperature was maintained at 290 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer using a valve, the discharge power supply was not stopped, and the photoconductive layer was continuously changed to 600 W during the film formation of 10.0 μm. In synchronization with the start of film formation, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to 1.0 μm, and the photoconductive layer 203 was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The produced photoconductor is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, there was no peeling or image defect, but an optical memory was observed.

The results are shown in Table 1.

Comparative Example 5 After the substrate temperature was kept at 290 ° C., the charge injection blocking layer 202 was formed with the discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer using a valve, the discharge power supply was not stopped, and the photoconductive layer was continuously changed to 600 W during the film formation of 10.0 μm. In synchronism with the start of film formation, the substrate temperature is raised to 315 ° C. while the entire photoconductive layer is formed, and the photoconductive layer 20
3 was deposited. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The produced photoreceptor is Canon NP6060.
Was remodeled and image evaluation was performed.

As a result, although there was no peeling or image defect, an optical memory was observed.

The results are shown in Table 1.

[Comparative Example 6] The film thickness of the photoconductive layer was set to 30 μm, the substrate temperature was kept at 290 ° C., and then the charge injection blocking layer 2 was discharged with a discharge power of 100 W using the apparatus shown in FIG.
Immediately after forming 02, the reaction gas was adjusted for the photoconductive layer by using each valve in FIG. 3, and the supply of discharge power was not stopped, while the photoconductive layer was formed to a thickness of 3.0 μm. , Continuously 6
The temperature was changed to 00 W, and in synchronization with the start of film formation of the photoconductive layer, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to 1.0 μm, and the photoconductive layer 203 was formed. After the photoconductive layer is formed, the supply of the discharge power is stopped, the valve of FIG. 3 is adjusted, and the surface layer 204 is formed by a-
A Si photoconductor was created.

The photoconductor thus prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, although there was no peeling or image defect, there were some in which an optical memory was observed. The results are shown in Table 1.

Comparative Example 7 The thickness of the photoconductive layer was set to 10 μm, the substrate temperature was kept at 290 ° C., and then the charge injection blocking layer 2 was discharged with a discharge power of 100 W using the device shown in FIG.
Immediately after forming 02, the reaction gas was adjusted for the photoconductive layer by using each valve of FIG. 3, the supply of the discharge power was not stopped, and the photoconductive layer was formed to a thickness of 2.0 μm. , Continuously 6
The temperature was changed to 00 W, and in synchronization with the start of film formation of the photoconductive layer, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to 1.0 μm, and the photoconductive layer 203 was formed. After the photoconductive layer is formed, the supply of the discharge power is stopped, the valve of FIG. 3 is adjusted, and the surface layer 204 is formed by a-
A Si photoconductor was created.

The photoreceptor prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, although there was no peeling or image defect, there were some in which an optical memory was observed.

The results are shown in Table 1.

Comparative Example 8 After the substrate temperature was maintained at 290 ° C., the charge injection blocking layer 202 was formed with the discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer using a valve, the discharge power supply was not stopped, and the photoconductive layer was continuously changed to 600 W while the photoconductive layer was formed to a thickness of 0.1 μm. In synchronization with the start of film formation, the substrate temperature was raised to 315 ° C. while the photoconductive layer was being formed to 3.0 μm, and the photoconductive layer 203 was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The produced photoreceptor is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, although there was no peeling or image defect, the optical memory was slightly observed.

The results are shown in Table 1.

Comparative Example 9 After the substrate temperature was kept at 290 ° C., the charge injection blocking layer 202 was formed with the discharge power of 100 W by the apparatus shown in FIG. The reaction gas was adjusted for the photoconductive layer using a valve, the discharge power supply was not stopped, and the photoconductive layer was continuously changed to 600 W while the photoconductive layer was formed to a thickness of 0.1 μm. In synchronization with the start of film formation, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to a thickness of 10.0 μm, and the photoconductive layer 203 was formed. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The photoreceptor prepared is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, there was no peeling or image defect, and the optical memory was slightly seen.

The results are shown in Table 1.

Comparative Example 10 After the substrate temperature was kept at 290 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus shown in FIG.
The reaction gas was adjusted for the photoconductive layer by using each of the bulbs, and the discharge power was not stopped and the photoconductive layer was continuously changed to 600 W while the photoconductive layer was formed to a thickness of 0.1 μm. In synchronization with the start of film formation of the conductive layer, the substrate temperature is raised to 315 ° C. while all layers of the photoconductive layer are formed.
3 was deposited. After the film formation of the photoconductive layer was completed, the supply of the discharge power was stopped, the valve of FIG. 3 was adjusted, and the surface layer 204 was formed into a film.

The produced photoreceptor is NP6060 manufactured by Canon.
Was remodeled and image evaluation was performed.

As a result, there was no peeling or image defect, and an optical memory was found.

The results are shown in Table 1.

[Comparative Example 11] The film thickness of the photoconductive layer was 30 μm.
After holding the substrate temperature at 290 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus of FIG. 3 shown in the experimental example, and immediately after that, each valve of FIG. Is adjusted for the photoconductive layer, the discharge power supply is not stopped, the photoconductive layer is continuously changed to 600 W while the photoconductive layer is formed by 0.1 μm, and the photoconductive layer is started in synchronization with the film formation. Then, the substrate temperature was raised to 315 ° C. while the photoconductive layer was deposited to 3.0 μm, and the photoconductive layer 203 was deposited.
After the photoconductive layer is formed, the supply of discharge power is stopped and
By adjusting the valve and forming the surface layer 204
-Si photoconductor was prepared.

The photoreceptor prepared is Canon NP6060.
Was remodeled and image evaluation was performed.

As a result, there was no peeling or image defect, and the optical memory was slightly seen.

The results are shown in Table 1.

[Comparative Example 12] The film thickness of the photoconductive layer was 10 μm.
After holding the substrate temperature at 290 ° C., the charge injection blocking layer 202 was formed with a discharge power of 100 W by the apparatus of FIG. 3 shown in the experimental example, and immediately after that, each valve of FIG. Is adjusted for the photoconductive layer, the discharge power supply is not stopped, the photoconductive layer is continuously changed to 600 W while the photoconductive layer is formed by 0.1 μm, and the photoconductive layer is started in synchronization with the film formation. Then, the substrate temperature was raised to 315 ° C. while the photoconductive layer was formed to a thickness of 2.0 μm, and the photoconductive layer 203 was formed.
After the photoconductive layer is formed, the supply of discharge power is stopped and
By adjusting the valve and forming the surface layer 204
-Si photoconductor was prepared.

The photoreceptor prepared is Canon NP6060.
Was remodeled and image evaluation was performed.

As a result, there was no peeling or image defect, and the optical memory was slightly seen.

The results are shown in Table 1.

In Examples and Comparative Examples, the high frequency power and the substrate temperature were changed in order to control the stress ratio at the photoconductive layer interface, but it can be controlled by other means.

In the case of the electrophotographic photosensitive member using the coherent light such as laser light, the conductive support used in the present invention eliminates image defects due to so-called interference fringe pattern appearing in a visible image. In order to achieve this, unevenness may be provided on the surface.

The photoconductor of the present invention and the process for producing the photoconductor can be used regardless of the polarity of charging such as positive or negative, or the layer structure of the electrophotographic photoconductor such as a single layer structure or a function separation type. .

[0204]

[Table 1] Symbol: ☆ ・ ・ ・ Very good ◎ ・ ・ ・ Excellent ○ ・ ・ ・ Good △ ・ ・ ・ Conventional level ＊ ・ ・ ・ Photoconductive layer thickness 30 μm ** ・ ・ ・ Photoconductive layer thickness 10 μm Note ) In the table, () indicates that the value was retained.

[0205]

As described above, the present invention has the following effects.

The electrophotographic photoconductor using the a-Si photoconductor of the present invention and the method for forming the photoconductor for the electrophotographic photoconductor include the stress between the layers at the interface between the charge injection blocking layer and the photoconductive layer of the photoconductor.
By continuously changing and controlling the substrate temperature and / or the discharge power, the optical memory can be removed to a good level, and the deterioration of the chargeability and the potential shift can be kept to a minimum while the image defects and the film are removed. It is possible to obtain a high quality image without peeling.

Further, since it is possible to examine the sample,
It is not necessary to prepare the photoconductor itself or put it in an actual machine and repeatedly examine it as in the conventional case, and an ideal photoconductor preparation condition can be obtained.

[Brief description of drawings]

FIG. 1 is a diagram showing a relationship between a stress ratio of an electrophotographic photosensitive member and respective performances, (A) showing a stress ratio and a peeling occurrence rate, and (B) showing a maximum stress ratio value and an image defect occurrence rate. Is.

FIG. 2 is a diagram showing a layer structure of a photoconductor according to the present invention, where (A) is a so-called single-layer type photoconductor having a single photoconductive layer, and (B) is a photoconductive layer in which charge generation is performed. It is a function-separated type photoreceptor comprising a region and a charge transport region.

FIG. 3 is a schematic view of a film forming apparatus used for forming the photoconductor and the sample shown in FIG.

FIG. 4 is a diagram showing an example of an electrophotographic apparatus using the photoconductor shown in FIG.

FIG. 5 is a schematic view of a stress measuring device for a sample (aluminum sample) formed on an aluminum substrate.

FIG. 6 is a graph showing the performance of the electrophotographic photosensitive member of the present invention, in which (A) shows the ratio of the region having a localized level density of 1 × 10 ¹⁵ cm ⁻³ or more to the photoconductive layer thickness. The figure which shows optical memory potential, (B) is a figure which shows the thickness and the optical memory potential of the area ^| region where a localized level density becomes 1 * 10 < ¹⁵ > cm < ^-3 > or more.
Is the optical memory potential and (density of optical memory part) /
It is a figure which shows the ratio of (density of the part other than optical memory).

[Explanation of symbols]

 500 substrate to be measured 501 holder 502 measuring unit

Front page continuation (72) Inventor Koji Yamazaki 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (72) Inventor Hiroaki Shinna 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.

Claims (5)

[Claims] 1. An amorphous silicon electrophotographic photosensitive member comprising a conductive support and at least an amorphous charge injection blocking layer and a photoconductive layer sequentially laminated on the conductive support, wherein the charge injection blocking layer and the photoconductive layer are formed. An electrophotographic photosensitive member, wherein the stress distribution in the thickness direction of the minute portion is substantially 1.5 times or less the stress of the minute portion adjacent to the lower layer of the minute portion. 2. A conductive support, on which at least an amorphous charge injection blocking layer and a photoconductive layer are sequentially stacked, the photoconductive layer containing at least silicon and hydrogen and / or a halogen atom, In the charge injection blocking layer and the photoconductive layer, the stress does not change upward or monotonically increases, and the stress is 0.55 to 0.55 from the mobility end on the valence band side of the photoconductive layer.
The local level density n at 0.95 eV is 1 × 10 ¹⁵ c
A region where m ⁻³ or more is 10% of the film thickness of the photoconductive layer and 2 μm or less, and the region in the thickness direction of the portion from the charge injection blocking layer to the photoconductive layer is A photoreceptor for electrophotography, wherein the stress is substantially 1.5 times or less the stress of a layer adjacent to the portion below the portion. 3. The conductive support is formed by forming a part of the charge injection element layer and a part of the photoconductive layer on the conductive support by a thickness k, and calculating the reciprocal number r _{1 of the} radius of curvature of the entire substrate at that time. A value obtained by subtracting the reciprocal number r ₀ of the radius of curvature of only the body is defined as a stress r _k, and the reciprocal number r _{2 of the} radius of curvature of the entire substrate when a layer having the same thickness as k is further formed on the photoconductive layer. The stress r is obtained by subtracting the reciprocal r ₀ of the radius of curvature of only the conductive support from
_The electrophotographic photosensitive member according to claim 1, wherein the stress ratio R = (r _k / r _{k + 1} ) ≦ 1.5 when _{k + 1} . 4. The electrophotographic photosensitive member according to claim 1, wherein the stress is changed in a portion from the charge injection blocking layer to a lower portion 1000 A or less of the photoconductive layer. 5. An electrically conductive support, on which at least an amorphous charge injection blocking layer and a photoconductive layer are sequentially laminated, the photoconductive layer containing at least silicon and hydrogen and / or a halogen atom, In the charge injection blocking layer and the photoconductive layer, the stress does not change upward or monotonically increases, and the stress is 0.55 to 0.55 from the mobility end on the valence band side of the photoconductive layer.
The localized level density n at 0.95 eV is 1 × 10 ¹⁵ c
The region of m ⁻³ or more is 10% of the film thickness of the photoconductive layer,
When the electrophotographic photosensitive member having a thickness of 2 μm or less is formed, the stress in the thickness direction of the portion from the charge injection blocking layer to the photoconductive layer is smaller than the stress in the portion adjacent to the lower side of the portion. Then, during the film formation of the charge injection blocking layer and the photoconductive layer, the power for decomposing the source gas and / or the substrate temperature is continuously changed so that the film thickness is substantially 1.5 times or less. A method of manufacturing an electrophotographic photosensitive member, comprising: