JPH06251901A - Resistance element - Google Patents
Resistance elementInfo
- Publication number
- JPH06251901A JPH06251901A JP5037190A JP3719093A JPH06251901A JP H06251901 A JPH06251901 A JP H06251901A JP 5037190 A JP5037190 A JP 5037190A JP 3719093 A JP3719093 A JP 3719093A JP H06251901 A JPH06251901 A JP H06251901A
- Authority
- JP
- Japan
- Prior art keywords
- insulating substrate
- metal connecting
- connecting piece
- parts
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Details Of Resistors (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、カラーブラウン管な
どの陰極線管内に配置される抵抗素子に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistance element arranged in a cathode ray tube such as a color cathode ray tube.
【０００２】[0002]
【従来の技術】一般にカラーブラウン管は、図５に示す
ように、パネル1 およびファンネル2からなる外囲器を
有し、そのパネル1 の内面に形成された３色蛍光体層か
らなる蛍光体スクリーン3 を、ファンネル2 のネック4
内に配設された電子銃5 から放出される３電子ビーム6
を偏向ヨーク7 の発生する磁界により偏向し、シャドウ
マスク8 を介して水平、垂直走査することによりカラー
画像を表示する構造に形成されている。2. Description of the Related Art Generally, as shown in FIG. 5, a color cathode ray tube has an envelope having a panel 1 and a funnel 2, and a phosphor screen having a three-color phosphor layer formed on the inner surface of the panel 1. 3 to the funnel 2 to the neck 4
3 electron beams 6 emitted from an electron gun 5 disposed inside
Is deflected by the magnetic field generated by the deflection yoke 7 and is horizontally and vertically scanned through the shadow mask 8 to form a color image display structure.
【０００３】上記電子銃5 には、従来より各種構造のも
のがあるが、その１種に図６に示す構造の電子銃があ
る。この電子銃は、紙面に垂直な方向に一列配置された
３個のカソードK 、このカソードK を各別に加熱する３
個のヒータH 、上記カソードKに順次隣接して蛍光体ス
クリーン方向に配置された第１、第２、第３、第４、第
５電極G1，G2，G3，G4，G5、２個の中間電極Gm1 ，Gm2
、第６電極G6およびこの第６電極G6に取付けられたシ
ールドカップSCからなり、このシールドカップSC以外の
ヒータH 、カソードK および各電極が一対の棒状絶縁支
持体（図示せず）により一体に固定された構造に形成さ
れている。The electron gun 5 has various structures conventionally, and one of them is an electron gun having a structure shown in FIG. This electron gun has three cathodes K 1 arranged in a line in a direction perpendicular to the plane of the paper, and each cathode K 3 is heated separately.
Heaters H, first, second, third, fourth and fifth electrodes G1, G2, G3, G4, G5, which are arranged adjacent to the cathode K in the direction of the phosphor screen, intermediately between the two Electrodes Gm1, Gm2
, A sixth electrode G6 and a shield cup SC attached to the sixth electrode G6. The heater H other than the shield cup SC, the cathode K and each electrode are integrally formed by a pair of rod-shaped insulating supports (not shown). It is formed in a fixed structure.
【０００４】この電子銃5 では、カソードK に１８０Ｖ
の直流電圧にビデオ信号を重畳した電圧が印加され、第
１電極G1は接地され、第２電極G2と第４電極G4は管内で
接続されて約８００Ｖの直流電圧が、第３電極G3と第５
電極G5も管内で接続されて約８〜９kVの直流電圧を基準
電圧として変化するダイナミックフォーカス電圧が、第
６電極G6には約３０kVの陽極高電圧が印加され、中間電
極Gm1 ，Gm2 にはそれぞれ陽極高電圧の約４０％および
６５％の電圧が印加される。With this electron gun 5, 180 V is applied to the cathode K.
A voltage in which a video signal is superimposed on the DC voltage is applied, the first electrode G1 is grounded, the second electrode G2 and the fourth electrode G4 are connected in the tube, and a DC voltage of about 800 V is generated between the third electrode G3 and the third electrode G3. 5
The electrode G5 is also connected in the tube, and a dynamic focus voltage that changes with a DC voltage of about 8 to 9 kV as a reference voltage, an anode high voltage of about 30 kV is applied to the sixth electrode G6, and the intermediate electrodes Gm1 and Gm2 respectively. A voltage of about 40% and 65% of the anode high voltage is applied.
【０００５】ところで、通常の電子銃では、陽極高電圧
の印加される電極以外は、ネック端部に溶着されたステ
ム10を貫通する複数本のステムピン11を介してそれぞれ
所定の電圧が印加されるが、上記電子銃5 の中間電極Gm
1 ，Gm2 のように比較的高い中電圧については、これを
ステムピン11を介して供給すると、ステムピン11の間隔
が狭いため、ステム10およびそのステムピン11に接続さ
れるソケットの耐電圧が問題となる。そのため、上記電
子銃5 においては、電極を一体に固定する一方の絶縁支
持体の背面（ネック内面との対向面）に沿って抵抗素子
13を配置し、この抵抗素子13によりファンネル2 に設け
られた陽極端子14、内面導電膜15などを介して第６電極
G6に印加される陽極高電圧を分割して、中間電極Gm1 ，
Gm2 にそれぞれ所定の電圧を供給する構造に形成されて
いる。By the way, in an ordinary electron gun, except for the electrode to which the anode high voltage is applied, a predetermined voltage is applied through a plurality of stem pins 11 penetrating the stem 10 welded to the neck end. However, the intermediate electrode Gm of the electron gun 5
For relatively high medium voltage such as 1 and Gm2, if this is supplied through the stem pin 11, the space between the stem pins 11 is narrow and the withstand voltage of the stem 10 and the socket connected to the stem pin 11 becomes a problem. . Therefore, in the electron gun 5, the resistance element is provided along the back surface (the surface facing the inner surface of the neck) of the one insulating support that fixes the electrodes integrally.
The sixth electrode 13 is arranged by means of this resistance element 13 via the anode terminal 14 and the inner conductive film 15 provided on the funnel 2.
The anode high voltage applied to G6 is divided into intermediate electrodes Gm1,
It is formed in a structure that supplies a predetermined voltage to each of Gm2.
【０００６】その抵抗素子13は、図７に示すように、板
面を貫通する複数個の円形開孔が形成されたのアルミナ
からなるセラミック絶縁基板17と、この絶縁基板17の一
方の面の開孔のまわりに形成された低抵抗の端子取出部
18と、上記一方の面に形成され、端子取出部15に接続さ
れた高抵抗パターン19と、絶縁基板17の一方の面の開孔
のまわりの端子取出部18の一部および他方の面の開孔の
まわりの一部を除く全面に形成され、高抵抗パターン19
を覆うガラス絶縁被膜20と、上記絶縁基板17の開孔に嵌
合し、かしめにより機械的に固定されて上記端子取出部
18に電気的に接続された金属接続片21a 〜21d （21a ，
21c ，21d のみ図示）と、上記絶縁基板17の一方および
他方の面の開孔のまわりの絶縁基板17に対する各金属接
続片21a〜21d の固定部分に形成された焼結ガラス絶縁
被膜（図示せず）とからなる。As shown in FIG. 7, the resistance element 13 includes a ceramic insulating substrate 17 made of alumina in which a plurality of circular apertures penetrating the plate surface are formed, and one surface of the insulating substrate 17. Low-resistance terminal lead-out formed around the opening
18, a high resistance pattern 19 formed on the one surface and connected to the terminal extraction portion 15, and a part of the terminal extraction portion 18 around the opening on one surface of the insulating substrate 17 and the other surface High resistance pattern 19 is formed on the entire surface except a part around the opening.
The glass insulating coating 20 covering the above and the opening of the insulating substrate 17 are fitted and mechanically fixed by caulking to form the terminal lead-out portion.
Metal connection pieces 21a to 21d (21a, 21a, electrically connected to
21c and 21d only) and a sintered glass insulating film (not shown) formed on the fixed portions of the metal connecting pieces 21a to 21d to the insulating substrate 17 around the openings on the one and the other surfaces of the insulating substrate 17. )) And.
【０００７】その各金属接続片21a 〜21d は、図８
（ａ）に21a について示すように、絶縁基板17の円形開
孔23に嵌合する円筒状部24の一端部にフランジ部25が設
けられ、同（ｂ）に示すように、円筒状部24の他端部を
拡径してかしめたとき、フランジ部25が端子取出部18に
圧接して、端子取出部18に電気的に接続されるものとな
っている。The respective metal connecting pieces 21a to 21d are shown in FIG.
As shown for 21a in (a), a flange portion 25 is provided at one end of a cylindrical portion 24 that fits into the circular opening 23 of the insulating substrate 17, and as shown in FIG. When the other end is expanded and caulked, the flange portion 25 is pressed against the terminal lead-out portion 18 and electrically connected to the terminal lead-out portion 18.
【０００８】このような抵抗素子13による中間電極Gm1
，Gm2 への電圧の供給は、図６に示したように、抵抗
素子13の一端部に設けられた金属接続片21a を第６電極
G6に接続し、他端部に設けられた金属接続片21d をステ
ムピン11を介して接地またはステムピン11と管外の可変
抵抗素子27とを介して接地し、中間部に設けられた２個
の金属接続片21b ，21c をそれぞれ中間電極Gm1 ，Gm2
に接続することによりおこなわれる。[0008] The intermediate electrode Gm1 formed by such a resistance element 13
, Gm2 is supplied to the sixth electrode through the metal connection piece 21a provided at one end of the resistance element 13 as shown in FIG.
It is connected to G6, and the metal connection piece 21d provided at the other end is grounded via the stem pin 11 or grounded via the stem pin 11 and the variable resistance element 27 outside the pipe, and the two metal connection pieces 21d provided in the middle part are connected. The metal connection pieces 21b and 21c are connected to the intermediate electrodes Gm1 and Gm2, respectively.
It is done by connecting to.
【０００９】しかし上記構造の抵抗素子13には、つぎの
ような問題がある。However, the resistance element 13 having the above structure has the following problems.
【００１０】すなわち、金属接続片21a 〜21d をかしめ
により機械的に絶縁基板17に固定すると、図８（ｂ）に
示したように、金属接続片21a 〜21d の円筒状部24の中
間部が外側に膨出し、絶縁基板17の開孔23内壁との隙間
が図８（ａ）に示したかしめ前の状態よりも狭くあるい
は接触した状態となる。That is, when the metal connecting pieces 21a to 21d are mechanically fixed to the insulating substrate 17 by caulking, as shown in FIG. 8B, the intermediate portion of the cylindrical portion 24 of the metal connecting pieces 21a to 21d is It bulges outward and the gap with the inner wall of the opening 23 of the insulating substrate 17 becomes narrower or in contact with the state before the caulking shown in FIG. 8 (a).
【００１１】また抵抗素子13は、上述の説明から明らか
なように、金属接続片21a 〜21d をかしめのより取付け
たのち、絶縁基板17に対する金属接続片21a 〜21d の固
定部分に焼結ガラス絶縁被膜が形成される。この焼結ガ
ラス絶縁被膜は、ガラス被膜材料を塗布したのち、焼成
炉に入れて約６００℃で焼成することにより形成され
る。この焼結ガラス絶縁被膜の焼成時、絶縁基板17の開
孔23および金属接続片21a 〜21d の円筒状部24は、とも
に熱膨張するが、アムミナからなるセラミック絶縁基板
17の熱膨張係数が７０〜８０×１０-7／℃であるのに対
し、従来の抵抗素子13は、金属接続片21a 〜21d が非磁
性ステンレス鋼である１６Ｃr −１４Ｎi−Ｆe 合金で
形成され、その熱膨張係数が１７５〜１９５×１０-7／
℃と、きわめて大きい（セラミック製絶縁基板の約２．
５倍）。そのため、たとえば円筒状部24と絶縁基板17の
開孔23内壁との隙間が狭い場合、焼成時に円筒状部24が
開孔23内壁に圧接し、その圧接力により絶縁基板17の開
孔部にクラックが発生する。またクラックが発生しない
場合でも、焼成して焼結ガラス絶縁被膜を形成したの
ち、常温に戻ると、金属接続片21a 〜21d のがたつきが
生じ、端子取出部18に対する電気的接続が不安定とな
り、中間電極Gm1 ，Gm2 に所定の電圧を供給することが
できなくなるなどの問題が生ずる。As is apparent from the above description, the resistance element 13 has the metal connecting pieces 21a to 21d attached thereto by caulking, and then the sintered glass insulating material is secured to the fixed portion of the metal connecting pieces 21a to 21d with respect to the insulating substrate 17. A film is formed. This sintered glass insulation coating is formed by applying a glass coating material, placing it in a firing furnace and firing it at about 600 ° C. During firing of this sintered glass insulating coating, the openings 23 of the insulating substrate 17 and the cylindrical portions 24 of the metal connecting pieces 21a to 21d both thermally expand, but a ceramic insulating substrate made of ammina.
While the coefficient of thermal expansion of 17 is 70 to 80 × 10 −7 / ° C., in the conventional resistance element 13, the metal connecting pieces 21 a to 21 d are formed of 16Cr-14Ni—Fe alloy which is non-magnetic stainless steel. , Its coefficient of thermal expansion is 175 to 195 × 10 −7 /
℃, very large (about 2.
5 times). Therefore, for example, when the gap between the cylindrical portion 24 and the inner wall of the opening 23 of the insulating substrate 17 is narrow, the cylindrical portion 24 is pressed against the inner wall of the opening 23 during firing, and the pressure contact force causes the opening portion of the insulating substrate 17 to contact the opening portion. Cracks occur. Even if cracks do not occur, after firing to form a sintered glass insulating film and then returning to room temperature, the metal connection pieces 21a to 21d rattle and the electrical connection to the terminal lead-out part 18 becomes unstable. Therefore, there arises a problem that a predetermined voltage cannot be supplied to the intermediate electrodes Gm1 and Gm2.
【００１２】[0012]
【発明が解決しようとする課題】上記のように、従来よ
りブラウン管の電子銃の電極に比較的高い中電圧を供給
するために、管内に電子銃に沿って抵抗素子を配置し、
この抵抗素子により陽極高電圧を分割して供給するよう
にしたものがある。As described above, in order to supply a relatively high medium voltage to the electrodes of an electron gun of a cathode ray tube as compared with the conventional one, a resistance element is arranged along the electron gun in the tube,
There is one in which the anode high voltage is divided and supplied by this resistance element.
【００１３】従来この抵抗素子は、板面を貫通する複数
個の円形開孔が形成されたアルミナからなるセラミック
製絶縁基板と、その一方の面の開孔のまわりに形成され
た低抵抗の端子取出部と、上記一方の面に形成され、端
子取出部に接続された高抵抗パターンと、絶縁基板の一
方の面の開孔のまわりの端子取出部の一部および他方の
面の開孔のまわりの一部を除く全面に形成されたガラス
絶縁被膜と、絶縁基板の開孔に嵌合し、かしめにより機
械的に固定され、端子取出部に電気的に接続された金属
接続片と、絶縁基板の一方および他方の面の開孔のまわ
りの絶縁基板に対する金属接続片の固定部分に形成され
た焼結ガラス絶縁被膜とから構成されている。Conventionally, this resistance element has a ceramic insulating substrate made of alumina in which a plurality of circular openings penetrating the plate surface are formed, and a low resistance terminal formed around the opening on one surface thereof. The extraction portion, a high resistance pattern formed on the one surface and connected to the terminal extraction portion, and a part of the terminal extraction portion around the opening on one surface of the insulating substrate and the opening on the other surface. Insulates the glass insulating film formed on the entire surface except a part of the surroundings, the metal connecting piece that fits into the opening of the insulating substrate, is mechanically fixed by caulking, and is electrically connected to the terminal extraction part. And a sintered glass insulating film formed on the fixed portion of the metal connecting piece to the insulating substrate around the openings on one and the other surfaces of the substrate.
【００１４】その金属接続片は、非磁性ステンレス鋼で
ある１６Ｃr −１４Ｎi −Ｆe 合金で形成され、絶縁基
板の円形開孔に嵌合する円筒状部の一端部にフランジ部
が設けられ、円筒状部の他端部を拡径してかしめたと
き、フランジ部が端子取出部に密接して端子取出部に電
気的に接続されるものとなっている。The metal connecting piece is made of a non-magnetic stainless steel, 16Cr-14Ni-Fe alloy, and has a flange portion provided at one end of a cylindrical portion fitted into the circular opening of the insulating substrate. When the other end of the portion is expanded and caulked, the flange portion comes into close contact with the terminal lead-out portion and is electrically connected to the terminal lead-out portion.
【００１５】しかしこのように構成された抵抗素子で
は、アルミナからなるセラミック絶縁基板の熱膨張係数
が７０〜８０×１０-7／℃であるのに対し、金属接続片
の熱膨張係数は、１７５〜１９５×１０-7／℃ときわめ
て大きいため、金属接続片をかしめのより固定したの
ち、絶縁基板に対する金属接続片の固定部分に焼結ガラ
ス絶縁被膜を形成するときの高温度焼成による熱膨張に
より、金属接続片の円筒状部が絶縁基板の開孔内壁に圧
接し、その圧接力により絶縁基板の開孔部にクラックが
発生する。またクラックが発生しない場合でも、焼成に
より焼結ガラス絶縁被膜を形成したのち、常温に戻る
と、金属接続片のがたつきが生じ、端子取出部に対する
電気的接続が不安定となり、電子銃の電極に所定の電圧
を供給することができなくなるなどの問題が生ずる。However, in the resistance element thus constructed, the coefficient of thermal expansion of the ceramic insulating substrate made of alumina is 70 to 80 × 10 −7 / ° C., whereas the coefficient of thermal expansion of the metal connecting piece is 175. Since it is extremely large up to 195 × 10 -7 / ° C, after the metal connecting piece is fixed by caulking, the thermal expansion due to high temperature firing when forming the sintered glass insulation coating on the fixed part of the metal connecting piece to the insulating substrate As a result, the cylindrical portion of the metal connecting piece comes into pressure contact with the inner wall of the opening of the insulating substrate, and the pressure contact force causes cracks in the opening of the insulating substrate. Even if cracks do not occur, after the sintered glass insulating film is formed by firing and the temperature is returned to room temperature, rattling of the metal connecting piece occurs, and electrical connection to the terminal lead-out portion becomes unstable, and There arises a problem that a predetermined voltage cannot be supplied to the electrodes.
【００１６】この発明は、上記問題点を解決するために
なされたものであり、セラミック絶縁基板の開孔に金属
接続片の円筒状部を嵌合して機械的に固定したのち、絶
縁基板の一方および他方の面の開孔のまわりの絶縁基板
に対する金属接続片の固定部分に高温度焼成により焼結
ガラス絶縁被膜を形成しても、絶縁基板の開孔部にクラ
ックや金属接続片のがたつきが生じない抵抗素子を構成
することを目的とする。The present invention has been made to solve the above-mentioned problems, and after the cylindrical portion of the metal connecting piece is fitted into the opening of the ceramic insulating substrate and mechanically fixed, the insulating substrate is removed. Even if a sintered glass insulating coating is formed by high-temperature firing on the fixed portion of the metal connecting piece to the insulating substrate around the openings on the one and the other surfaces, cracks and metal connecting pieces may remain in the opening of the insulating substrate. The purpose is to construct a resistance element that does not cause rattling.
【００１７】[0017]
【課題を解決するための手段】板面を貫通する複数個の
円形開孔が形成されたセラミック絶縁基板と、この絶縁
基板の一方の面の開孔のまわりに形成された低抵抗の端
子取出部と、絶縁基板の一方の面に形成され、端子取出
部に電気的に接続された高抵抗パターンと、絶縁基板の
開孔に嵌合する円筒状部の一端にフランジ部が形成さ
れ、この円筒状部が円形開孔に嵌合し、機械的な固定に
よりフランジ部が端子取出部に電気的に接続された金属
接続片と、絶縁基板に対する金属接続片の固定部分に形
成された焼結ガラス絶縁被膜とを有する抵抗素子におい
て、金属接続片を、円筒状部の外径をＤ1 、絶縁基板の
開孔径をＤ2 とするとき、 Ｄ1 ／Ｄ2 ＝０．８９〜０．９９ の関係に形成し、かつ常温から焼結ガラス絶縁被膜の焼
成温度Ｔ℃までの温度範囲における熱膨張係数αが α＜（Ｄ2 −Ｄ1 ）／Ｔ である非磁性金属により形成した。A ceramic insulating substrate having a plurality of circular openings penetrating a plate surface and a low resistance terminal lead formed around the opening on one surface of the insulating substrate. And a high resistance pattern formed on one surface of the insulating substrate and electrically connected to the terminal lead-out portion, and a flange portion formed at one end of the cylindrical portion that fits into the opening of the insulating substrate. The cylindrical part fits into the circular hole, and the metal connection piece whose flange part is electrically connected to the terminal extraction part by mechanical fixing and the sintered part formed on the fixed part of the metal connection piece to the insulating substrate In a resistance element having a glass insulating film, a metal connecting piece is formed in a relationship of D1 / D2 = 0.89 to 0.99 where D1 is the outer diameter of the cylindrical portion and D2 is the opening diameter of the insulating substrate. From room temperature to the firing temperature T ° C of the sintered glass insulation coating It was formed of a non-magnetic metal whose coefficient of thermal expansion α in the temperature range was α <(D2-D1) / T.
【００１８】[0018]
【作用】セラミック絶縁基板の開孔部のクラックは、か
しめなどの機械的な固定により金属接続片を絶縁基板の
開孔部に固定したのち、その絶縁基板の一方および他方
の面の開孔のまわりの絶縁基板に対する金属接続片の固
定部分に焼結ガラス絶縁被膜を形成するときの高温度焼
成により熱膨張し、金属接続片の円筒状部が絶縁基板の
開孔内壁に圧接し、その圧接力に耐えられないのために
生ずる。また高温度焼成により焼結ガラス絶縁被膜を形
成したのち、常温に戻ったとき生ずる金属接続片のがた
つきも、同様の原因により生ずるものと考えられる。し
かし上記のように絶縁基板の開孔径Ｄ2 と金属接続片の
円筒状部の外径Ｄ1 との関係および金属接続片の熱膨張
係数αを規制すると、金属接続片の円筒状部の絶縁基板
の開孔内壁への圧接を緩和することができ、その圧接力
による開孔部のクラックの発生、および焼成により焼結
ガラス絶縁被膜を形成したのち、常温に戻ったときの金
属接続片のがたつきを防止することができる。The crack in the opening of the ceramic insulating substrate is fixed by mechanically fixing the metal connecting piece to the opening of the insulating substrate by caulking or the like. The cylindrical portion of the metal connecting piece is pressed against the inner wall of the opening of the insulating substrate when the sintered glass insulating film is formed on the fixed part of the metal connecting piece to the surrounding insulating substrate by high temperature firing, and the pressure contact is made. It occurs because you cannot bear the force. Further, it is considered that the rattling of the metal connecting piece, which occurs when the sintered glass insulating film is formed by high temperature firing and then returned to room temperature, is caused by the same cause. However, if the relation between the opening diameter D2 of the insulating substrate and the outer diameter D1 of the cylindrical portion of the metal connecting piece and the thermal expansion coefficient α of the metal connecting piece are regulated as described above, the insulating substrate of the cylindrical portion of the metal connecting piece is Pressure contact with the inner wall of the hole can be mitigated, cracks in the hole due to the pressure contact force, and after firing the sintered glass insulating film by firing, rattling of the metal connection piece when returning to room temperature It is possible to prevent sticking.
【００１９】[0019]
【実施例】以下、図面を参照してこの発明を実施例に基
づいて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will now be described based on embodiments with reference to the drawings.
【００２０】図１にその一実施例である抵抗素子を示
す。この抵抗素子は、複数個の円形開孔23が形成された
板厚約１mm、幅約８mmのアルミナからなるセラミック絶
縁基板17と、この絶縁基板17の一方の面の開孔のまわり
に形成された低抵抗の端子取出部18と、上記一方の面に
形成され、端子取出部18に接続された高抵抗パターン19
と、絶縁基板17の一方の面の開孔のまわりの端子取出部
18の一部および他方の面の開孔のまわりの一部を除く全
面に形成され、高抵抗パターン19を覆うガラス絶縁被膜
20と、上記絶縁基板17の開孔に嵌合し、かしめにより機
械的に固定されて上記端子取出部18に電気的に接続され
た金属接続片21a 〜21d （21a ，21c ，21d のみ図示）
と、上記絶縁基板17の一方および他方の面の開孔のまわ
りに形成され、絶縁基板17に対する各金属接続片21a 〜
21d の固定部分を覆う焼結ガラス絶縁被膜30とからな
る。FIG. 1 shows a resistance element which is an embodiment of the present invention. This resistance element is formed around a ceramic insulating substrate 17 made of alumina and having a plate thickness of about 1 mm and a width of about 8 mm in which a plurality of circular apertures 23 are formed, and an aperture on one surface of the insulating substrate 17. Low resistance terminal lead-out portion 18 and a high resistance pattern 19 formed on the one surface and connected to the terminal lead-out portion 18.
And a terminal lead-out portion around the opening on one surface of the insulating substrate 17.
A glass insulating film formed on the entire surface except a part of 18 and a part around the opening on the other surface and covering the high resistance pattern 19.
20 and metal connecting pieces 21a to 21d (21a, 21c, and 21d only are shown) that are fitted into the openings of the insulating substrate 17 and mechanically fixed by caulking and electrically connected to the terminal lead-out portion 18
And each metal connecting piece 21a to the insulating substrate 17 formed around the opening on one and the other surface of the insulating substrate 17 ~.
It consists of a sintered glass insulating coating 30 covering the fixed portion of 21d.
【００２１】その各金属接続片21a 〜21d は、絶縁基板
17の円形開孔23に嵌合する円筒状部24の一端部にフラン
ジ部25が設けられ、その円筒状部24を開孔23に嵌合して
他端部を拡径してかしめたとき、フランジ部25が端子取
出部18に圧接して、端子取出部18に電気的に接続される
ものとなっている。Each of the metal connecting pieces 21a to 21d is an insulating substrate.
When a flange portion 25 is provided at one end of a cylindrical portion 24 that fits into the circular opening 23 of 17 and the cylindrical portion 24 is fitted into the opening 23 and the other end is expanded and caulked. The flange portion 25 is in pressure contact with the terminal lead-out portion 18 and is electrically connected to the terminal lead-out portion 18.
【００２２】この抵抗素子は、図７に示した従来の抵抗
素子とほぼ同じ構造であるが、特にこの例の抵抗素子の
金属接続片21a 〜21d は、熱膨張係数αが従来の１６Ｃ
r −１４Ｎi −Ｆe 合金からなる金属接続片の熱膨張係
数αよりも小さく、かつプレス成形可能な非磁性金属か
ら選択された１６Ｃr −６Ｆe −Ｎi 合金からなる。そ
して円筒状部24の外径Ｄ1 を絶縁基板17の開孔23の内径
Ｄ2 に対して、 Ｄ2 −Ｄ1 ＝０．８９〜０．９９ の関係に形成し、かつ焼結ガラス絶縁被膜30の焼成温度
Ｔ℃に対して、 α＜（Ｄ2 −Ｄ1 ）／Ｔ を満足するものとなっている。This resistance element has almost the same structure as the conventional resistance element shown in FIG. 7, but especially the metal connecting pieces 21a to 21d of the resistance element of this example have a coefficient of thermal expansion .alpha.
It is made of 16Cr-6Fe-Ni alloy which is smaller than the thermal expansion coefficient α of the metal connecting piece made of r-14Ni-Fe alloy and which is selected from non-magnetic metals that can be press-formed. The outer diameter D1 of the cylindrical portion 24 is formed so as to have a relationship of D2-D1 = 0.89 to 0.99 with respect to the inner diameter D2 of the opening 23 of the insulating substrate 17, and the sintered glass insulation coating 30 is fired. With respect to the temperature T ° C., α <(D2-D1) / T is satisfied.
【００２３】つぎに、開孔23の径Ｄ2 が１．０５mmの絶
縁基板17に対して、１６Ｃr −６Ｆe −Ｎi 合金により
円筒状部の外径Ｄ1 が０．９２mm，０．９４mm，０．９
８mm，１．０１mm，１．０４mmである５種類の金属接続
片を製作し、従来の１６Ｃr−１４Ｎi −Ｆe 合金から
なる同一寸法の金属接続片と比較した具体例について説
明する。Next, with respect to the insulating substrate 17 having the diameter D2 of the opening 23 of 1.05 mm, the outer diameter D1 of the cylindrical portion is made of 16Cr-6Fe-Ni alloy and the outer diameter D1 of the cylindrical portion is 0.92 mm, 0.94 mm, 0.9.
A specific example in which five kinds of metal connecting pieces of 8 mm, 1.01 mm, and 1.04 mm are manufactured and compared with a metal connecting piece of the same size made of a conventional 16Cr-14Ni-Fe alloy will be described.
【００２４】上記５種類の金属接続片の円筒状部の外径
Ｄ1 は、絶縁基板の開孔の内径Ｄ2に対して、それぞれ
Ｄ1 ／Ｄ2 ＝８７．６％，８９．５％，９３．３％，９
６．２％，９９．０％である。これら各金属接続片を、
一方の面の開孔のまわりに端子取出部の形成された絶縁
基板に、かしめにより固定したのち、この金属接続片の
まわりにガラス被覆材を塗布し、約６００℃の焼成温度
Ｔ℃で焼成して焼結ガラス絶縁被膜を形成し、絶縁基板
の開孔部のクラックの発生状況および常温復帰後の金属
接続片の固定強度を調査した。クラックの発生率につい
ては、目視および顕微鏡により調査し、固定強度につい
ては、図２に示すように、電子銃の電極に接続するため
の金属接続片21（21a 〜21d ）のタブ31の根元に矢印32
方向のトルクを負荷し、金属接続片21にがたつきが生じ
たときのトルクの大きさを固定強度とした。The outer diameter D1 of the cylindrical portion of the above-mentioned five kinds of metal connecting pieces is D1 / D2 = 87.6%, 89.5%, 93.3 with respect to the inner diameter D2 of the opening of the insulating substrate, respectively. %, 9
It is 6.2% and 99.0%. Each of these metal connection pieces,
After fixing by caulking to an insulating substrate having a terminal lead-out portion formed around an opening on one surface, a glass coating material is applied around the metal connecting piece and baked at a baking temperature T ° C of about 600 ° C. Then, a sintered glass insulating film was formed, and the state of occurrence of cracks in the openings of the insulating substrate and the fixing strength of the metal connecting piece after returning to room temperature were investigated. The crack occurrence rate was examined visually and with a microscope. As for the fixing strength, as shown in FIG. 2, at the base of the tab 31 of the metal connecting piece 21 (21a to 21d) for connecting to the electrode of the electron gun. Arrow 32
The torque was applied in the directional direction, and the magnitude of the torque when the metal connecting piece 21 rattled was defined as the fixed strength.
【００２５】図３に示す線34は、この例の１６Ｃr −６
Ｆe −Ｎi 合金からなる金属接続片のクラックの発生
率、曲線35は、従来の１６Ｃr −１４Ｎi −Ｆe 合金か
らなる金属接続片のクラックの発生率である。また図４
に示す曲線36は、この例の１６Ｃr −６Ｆe −Ｎi 合金
からなる金属接続片の固定強度、曲線37は、従来の１６
Ｃr −１４Ｎi −Ｆe 合金からなる金属接続片の固定強
度である。The line 34 shown in FIG. 3 is the 16Cr-6 of this example.
The crack occurrence rate of the metal connecting piece made of the Fe-Ni alloy, and the curve 35 is the crack occurrence rate of the metal connecting piece made of the conventional 16Cr-14Ni-Fe alloy. See also FIG.
The curve 36 shown in FIG. 2 is the fixing strength of the metal connecting piece made of the 16Cr-6Fe-Ni alloy of this example, and the curve 37 is the conventional 16
It is the fixing strength of a metal connecting piece made of a Cr-14Ni-Fe alloy.
【００２６】図３から概してクラックの発生率は、従来
の金属接続片については、Ｄ1 ／Ｄ2 ＝８７．６％，８
９．５％の場合は、発生しないが（０）、Ｄ1 ／Ｄ2 ＝
９３．３％，９６．２％，９９．０％となるにしたがっ
て、急激に増大する。これに対し、この例の金属接続片
については、Ｄ1 ／Ｄ2 ＝８７．６％，８９．５％，９
３．３％，９６．２％，９９．０％のいずれの場合も発
生しない。特に円筒状部の外径Ｄ1 が１．０４mmのＤ1
／Ｄ2 ＝９９．０％の場合、この例の金属接続片のクラ
ック発生率０％に対して、従来の金属接続片では、１８
％発生している。From FIG. 3, generally, the crack generation rate is D1 / D2 = 87.6%, 8 for the conventional metal connecting piece.
In case of 9.5%, it does not occur (0), but D1 / D2 =
It rapidly increases as it reaches 93.3%, 96.2%, and 99.0%. On the other hand, for the metal connecting piece of this example, D1 / D2 = 87.6%, 89.5%, 9
It does not occur in any of 3.3%, 96.2%, and 99.0%. Especially, the outer diameter D1 of the cylindrical part is 1.04 mm.
When / D2 = 99.0%, the crack occurrence rate of the metal connecting piece of this example is 0%, whereas that of the conventional metal connecting piece is 18%.
%It has occurred.
【００２７】また固定強度は、いずれの場合も、この例
の金属接続片の方が従来の金属接続片よりも大きく、こ
の例の金属接続片では、Ｄ1 ／Ｄ2 ＝８９．５％以上で
目標値の４００gfを満足するが、従来の金属接続片で
は、Ｄ1 ／Ｄ2 ＝９３．３％，９６．２％以外、目標値
を満足していない。In any case, the fixing strength of the metal connecting piece of this example is larger than that of the conventional metal connecting piece. With the metal connecting piece of this example, D1 / D2 = 89.5% or more is the target. Although the value of 400 gf is satisfied, the conventional metal connecting pieces do not satisfy the target values except D1 / D2 = 93.3% and 96.2%.
【００２８】このような結果が得られる理由を明確にす
るため、両金属接続片および絶縁基板の３０℃（常温）
から焼結ガラス絶縁被膜30の焼成温度である６００℃ま
で範囲における熱膨張係数αを測定の結果、この例の１
６Ｃr −６Ｆe −Ｎi 合金からなる金属接続片について
は、１５３×１０-7／℃、従来の１６Ｃr −１４Ｎi−
Ｆe 合金からなる金属接続片については、１８８×１０
-7／℃であった。また絶縁基板については、７５×１０
-7／℃という測定結果が得られた。この金属接続片の熱
膨張係数αの測定結果は、３０℃から６００℃の範囲
で、この例の金属接続片の方が従来の金属接続片よりも
約２０％小さいことを示している。In order to clarify the reason why such a result is obtained, both metal connecting pieces and the insulating substrate are kept at 30 ° C. (normal temperature).
To 600 ° C., which is the firing temperature of the sintered glass insulation coating 30, from the thermal expansion coefficient α, 1
For the metal connecting piece made of 6Cr-6Fe-Ni alloy, 153 × 10 -7 / ° C., the conventional 16Cr-14Ni-
188 × 10 for metal connection piece made of Fe alloy
It was -7 / ° C. For the insulating substrate, 75 × 10
A measurement result of -7 / ° C was obtained. The measurement result of the thermal expansion coefficient α of this metal connecting piece shows that the metal connecting piece of this example is about 20% smaller than the conventional metal connecting piece in the range of 30 ° C to 600 ° C.
【００２９】一般に上記抵抗素子のように円筒状部の一
端部にフランジ部が設けられた金属接続片を開孔に挿入
して、かしめにより固定すると、図８（ａ）および
（ｂ）に示したように、円筒状部24の中間部が外側に膨
出し、円筒状部24と開孔23内壁との隙間がかしめ前より
も狭くなる。そのため、かしめにより金属接続片を絶縁
基板に固定したのち、約６００℃の高温に加熱すると、
熱膨張係数αの大きい金属接続片では、金属接続片と絶
縁基板との熱膨張の差により、金属接続片の円筒状部が
開孔内壁に強く圧接し、脆弱なセラミック絶縁基板の開
孔にクラックを発生させるようになる。また固定強度に
ついては、金属接続片は、約６００℃の焼結ガラス絶縁
被膜の焼成工程で、熱膨張と同時に応力緩和もおこる。
その結果、熱膨張係数αの大きい金属接続片では、焼成
後、常温に戻ったとき、がたつきも大きくなると考えら
れる。Generally, when a metal connecting piece having a flange portion at one end portion of a cylindrical portion like the above resistance element is inserted into an opening and fixed by caulking, it is shown in FIGS. 8 (a) and 8 (b). As described above, the intermediate portion of the cylindrical portion 24 bulges outward, and the gap between the cylindrical portion 24 and the inner wall of the opening 23 becomes narrower than that before caulking. Therefore, if the metal connection piece is fixed to the insulating substrate by caulking and then heated to a high temperature of about 600 ° C,
In the case of a metal connecting piece with a large thermal expansion coefficient α, due to the difference in thermal expansion between the metal connecting piece and the insulating substrate, the cylindrical portion of the metal connecting piece strongly press-contacts the inner wall of the opening, causing a weak opening in the ceramic insulating substrate. It will start to crack. Regarding the fixed strength, the metal connecting piece also undergoes thermal expansion and stress relaxation in the firing process of the sintered glass insulating coating at about 600 ° C.
As a result, it is considered that the metal connection piece having a large coefficient of thermal expansion α also has large rattling when returned to room temperature after firing.
【００３０】上記具体例に示した円筒状部の外径Ｄ1 が
１．０４mm、Ｄ1 ／Ｄ2 ＝９９．０％の場合についてさ
らに説明すると、従来の１６Ｃr −１４Ｎi −Ｆe 合金
からなる金属接続片では、 Ｄ2 −Ｄ1 ＝１．０５−１．０４ ＝０．０１０mm であり、この従来の金属接続片の熱膨張係数αは、１８
８×１０-7℃であるから、 （Ｄ2 −Ｄ1 ）／６００＝１６７×１０-7 α＞（Ｄ2 −Ｄ1 ）／６００ となる。これに対して、この例の１６Ｃr −６Ｆe −Ｎ
i 合金からなる金属接続片は、同じく Ｄ2 −Ｄ1 ＝１．０５−１．０４ ＝０．０１０mm であるが、熱膨張係数αが１５３×１０-7℃であり、 α＜（Ｄ2 −Ｄ1 ）／６００ となっている。そしてクラックの発生がなく、固定強度
も目標値である４００gfを満足するものとなっている。The case where the outer diameter D1 of the cylindrical portion shown in the above specific example is 1.04 mm and D1 / D2 = 99.0% will be further explained. In the case of the conventional metal connecting piece made of 16Cr-14Ni-Fe alloy, , D2 -D1 = 1.05-1.04 = 0.010 mm, and the thermal expansion coefficient α of this conventional metal connecting piece is 18
Since it is 8 × 10 −7 ° C., (D 2 −D 1) / 600 = 167 × 10 −7 α> (D 2 −D 1) / 600. On the other hand, 16Cr-6Fe-N in this example
The metal connecting piece made of the i alloy also has D2-D1 = 1.05-1.04 = 0.010 mm, but the thermal expansion coefficient α is 153 × 10 -7 ° C, and α <(D2-D1) It is / 600. There are no cracks, and the fixing strength satisfies the target value of 400 gf.
【００３１】この関係は、円筒状部の外径Ｄ1 が０．９
４mm，０．９８mm，１．０１mmであり、Ｄ1 ／Ｄ2 ＝８
９．５％，９３．３％，９６．２％の金属接続片の場合
でも成立する。つまり、Ｄ1 ／Ｄ2 ＝８９．５％を下限
とし、Ｄ1 ／Ｄ2 ＝９９％を上限とする Ｄ1 ／Ｄ2 ＝０．８９〜０．９９ の範囲において、 α＜（Ｄ2 −Ｄ1 ）／６００ であり、より一般的には、焼結ガラス絶縁被膜30の焼成
温度Ｔ℃に対して、 α＜（Ｄ2 −Ｄ1 ）／Ｔ とすることにより、セラミック絶縁基板17の開孔部のク
ラックをなくし、また金属接続片21a 〜21d のがたつき
をなくして、セラミック絶縁基板17の一方の面の開孔23
のまわりに形成された端子取出部18との電気的な接続を
安定かつ確実なものとすることができる。This relationship is such that the outer diameter D1 of the cylindrical portion is 0.9.
4 mm, 0.98 mm, 1.01 mm, D1 / D2 = 8
This is also true for 9.5%, 93.3% and 96.2% metal connection pieces. That is, in the range of D1 / D2 = 0.89 to 0.99 where D1 / D2 = 89.5% is the lower limit and D1 / D2 = 99% is the upper limit, α <(D2-D1) / 600. More generally, by setting α <(D2−D1) / T with respect to the firing temperature T ° C. of the sintered glass insulating coating 30, cracks in the openings of the ceramic insulating substrate 17 are eliminated, and To eliminate the rattling of the metal connection pieces 21a to 21d, open the hole 23 on one surface of the ceramic insulating substrate 17.
The electrical connection with the terminal lead-out portion 18 formed around the can be made stable and reliable.
【００３２】[0032]
【発明の効果】板面を貫通する複数個の円形開孔が形成
されたセラミック絶縁基板の一方の面の開孔のまわりに
低抵抗の端子取出部、この端子取出部に電気的に接続さ
れた高抵抗パターンが形成され、絶縁基板の開孔に金属
接続片の円筒状部が嵌合し、機械的な固定により金属接
続片のフランジ部が端子取出部に電気的に接続され、そ
の絶縁基板に対する金属接続片の固定部分に焼結ガラス
絶縁被膜が形成される抵抗素子において、金属接続片
を、円筒状部の外径Ｄ1 、絶縁基板の開孔径Ｄ2 ににつ
いて、 Ｄ1 ／Ｄ2 ＝０．８９〜０．９９ の関係に形成し、かつ常温から焼結ガラス絶縁被膜の焼
成温度Ｔ℃までの温度範囲における熱膨張係数αが α＜（Ｄ2 −Ｄ1 ）／Ｔ である非磁性金属により形成すると、焼成により焼結ガ
ラス絶縁被膜を形成するときの金属接続片の熱膨張に基
づく金属接続片の絶縁基板の開孔内壁への圧接を緩和す
ることができ、その圧接力による開孔部のクラックの発
生、および焼成により焼結ガラス絶縁被膜を形成したの
ち、常温に戻ったときの金属接続片のがたつきを防止す
ることができる。したがって特にこの抵抗素子を陰極線
管に適用して、電子銃の所定の電極に所定の電圧を供給
でき、安定した特性を備える信頼性の高い陰極線管とす
ることができる。EFFECT OF THE INVENTION A low resistance terminal lead-out portion is provided around an opening on one surface of a ceramic insulating substrate having a plurality of circular openings formed therethrough, and is electrically connected to the terminal lead-out portion. High resistance pattern is formed, the cylindrical part of the metal connection piece is fitted into the opening of the insulating substrate, and the flange part of the metal connection piece is electrically connected to the terminal extraction part by mechanical fixing, and the insulation In a resistance element in which a sintered glass insulating film is formed on a fixed portion of a metal connecting piece with respect to a substrate, the metal connecting piece has a cylindrical portion having an outer diameter D1 and an insulating substrate having an opening diameter D2 of D1 / D2 = 0. 89 to 0.99 and formed of a non-magnetic metal whose coefficient of thermal expansion α is α <(D2 −D1) / T in the temperature range from room temperature to the firing temperature T ° C. of the sintered glass insulation coating. Then, the sintered glass insulating film is formed by firing. The pressure contact of the metal connecting piece to the inner wall of the opening of the insulating substrate due to the thermal expansion of the metal connecting piece can be mitigated, the cracking of the opening due to the pressure contact force, and the sintering glass insulation by firing. It is possible to prevent rattling of the metal connecting piece when the temperature is returned to room temperature after forming the coating film. Therefore, in particular, this resistance element is applied to a cathode ray tube to supply a predetermined voltage to a predetermined electrode of an electron gun, and a highly reliable cathode ray tube having stable characteristics can be obtained.
【図１】図１（ａ）はこの発明の一実施例である抵抗素
子の構成を示す平面図、図１（ｂ）はその要部構成を示
す断面図である。FIG. 1 (a) is a plan view showing the structure of a resistance element according to an embodiment of the present invention, and FIG. 1 (b) is a sectional view showing the structure of the main part thereof.
【図２】上記抵抗素子の金属接続片の固定強度の測定方
法を説明するための図である。FIG. 2 is a diagram for explaining a method of measuring the fixing strength of the metal connection piece of the resistance element.
【図３】上記抵抗素子のクラック発生率を従来のそれと
比較して示す図である。FIG. 3 is a diagram showing a crack occurrence rate of the resistance element in comparison with a conventional crack occurrence rate.
【図４】上記抵抗素子の金属接続片の固定強度を従来の
それと比較して示す図である。FIG. 4 is a diagram showing a fixing strength of a metal connecting piece of the resistance element in comparison with a conventional fixing strength.
【図５】カラーブラウン管の構成を示す図である。FIG. 5 is a diagram showing a configuration of a color CRT.
【図６】上記カラーブラウン管の電子銃の構成を示す図
である。FIG. 6 is a diagram showing a configuration of the electron gun of the color cathode ray tube.
【図７】上記カラーブラウン管の管内に配置される抵抗
素子の構成を示す斜視図である。FIG. 7 is a perspective view showing a configuration of a resistance element arranged inside the color cathode ray tube.
【図８】図８（ａ）はセラミック製絶縁基板の開孔に固
定される金属接続片の形状を示す図、図８（ｂ）はその
固定状態を示す図である。FIG. 8 (a) is a view showing the shape of a metal connecting piece fixed to an opening of a ceramic insulating substrate, and FIG. 8 (b) is a view showing the fixed state.
17…セラミック絶縁基板 18…端子取出部 19…高抵抗パターン 20…ガラス絶縁被膜 21a ，21c ，21d …金属接続片 23…開孔 24…円筒状部 25…フランジ部 30…焼結ガラス絶縁被膜 31…タブ 17 ... Ceramic insulating substrate 18 ... Terminal lead-out portion 19 ... High resistance pattern 20 ... Glass insulating coating 21a, 21c, 21d ... Metal connecting piece 23 ... Opening 24 ... Cylindrical portion 25 ... Flange portion 30 ... Sintered glass insulating coating 31 …tab
Claims (1)
されたセラミック絶縁基板と、この絶縁基板の一方の面
の開孔のまわりに形成された低抵抗の端子取出部と、上
記絶縁基板の一方の面に形成され、上記端子取出部に電
気的に接続された高抵抗パターンと、上記絶縁基板の開
孔に嵌合する円筒状部の一端にフランジ部が形成され、
上記円筒状部が上記円形開孔に嵌合し、機械的な固定に
より上記フランジ部が上記端子取出部に電気的に接続さ
れた金属接続片と、上記絶縁基板に対する上記金属接続
片の固定部分に形成された焼結ガラス絶縁被膜とを有す
る抵抗素子において、 上記金属接続片は上記円筒状部の外径をＤ1 、上記絶縁
基板の開孔径をＤ2 とするとき、 Ｄ1 ／Ｄ2 ＝０．８９〜０．９９ の関係に形成され、かつ常温から上記焼結ガラス絶縁被
膜の焼成温度Ｔ℃までの温度範囲における熱膨張係数α
が α＜（Ｄ2 −Ｄ1 ）／Ｔ である非磁性金属からなることを特徴とする抵抗素子。1. A ceramic insulating substrate having a plurality of circular openings penetrating a plate surface, a low-resistance terminal lead-out portion formed around the opening on one surface of the insulating substrate, A high resistance pattern formed on one surface of the insulating substrate, electrically connected to the terminal extraction portion, and a flange portion formed at one end of a cylindrical portion that fits into the opening of the insulating substrate,
A metal connecting piece in which the cylindrical portion is fitted into the circular opening and the flange portion is electrically connected to the terminal lead-out portion by mechanical fixing, and a fixing portion of the metal connecting piece to the insulating substrate. In the resistance element having the sintered glass insulating coating formed in step S1, the metal connecting piece has a cylindrical portion having an outer diameter of D1 and an insulating substrate having an opening diameter of D2. D1 / D2 = 0.89 To 0.99, and the coefficient of thermal expansion α in the temperature range from room temperature to the firing temperature T ° C. of the sintered glass insulating coating.
A resistance element characterized by being made of a non-magnetic metal with α <(D2-D1) / T.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5037190A JPH06251901A (en) | 1993-02-26 | 1993-02-26 | Resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5037190A JPH06251901A (en) | 1993-02-26 | 1993-02-26 | Resistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06251901A true JPH06251901A (en) | 1994-09-09 |
Family
ID=12490661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5037190A Pending JPH06251901A (en) | 1993-02-26 | 1993-02-26 | Resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06251901A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000079559A1 (en) * | 1999-06-18 | 2000-12-28 | Kabushiki Kaisha Toshiba | Internal resistor of cathode-ray tube |
| US6294872B1 (en) | 2000-03-09 | 2001-09-25 | Hitachi, Ltd. | Cathode ray tube |
-
1993
- 1993-02-26 JP JP5037190A patent/JPH06251901A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000079559A1 (en) * | 1999-06-18 | 2000-12-28 | Kabushiki Kaisha Toshiba | Internal resistor of cathode-ray tube |
| US6356021B2 (en) | 1999-06-18 | 2002-03-12 | Kabushiki Kaisha Toshiba | Built-in resistor for cathode-ray tube |
| KR100391384B1 (en) * | 1999-06-18 | 2003-07-12 | 가부시끼가이샤 도시바 | Internal resistor of cathode-ray tube |
| US6294872B1 (en) | 2000-03-09 | 2001-09-25 | Hitachi, Ltd. | Cathode ray tube |
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