JPH06244093A - Substrate holding method, and method and device for manufacture of thin film multilayer substrate by using it - Google Patents

Substrate holding method, and method and device for manufacture of thin film multilayer substrate by using it

Info

Publication number
JPH06244093A
JPH06244093A JP2777793A JP2777793A JPH06244093A JP H06244093 A JPH06244093 A JP H06244093A JP 2777793 A JP2777793 A JP 2777793A JP 2777793 A JP2777793 A JP 2777793A JP H06244093 A JPH06244093 A JP H06244093A
Authority
JP
Japan
Prior art keywords
substrate
vacuum suction
film
thin film
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2777793A
Other languages
Japanese (ja)
Inventor
Mitsuo Yoshimoto
光雄 吉本
Hidetaka Shigi
英孝 志儀
Masakazu Ishino
正和 石野
Takashi Inoue
隆史 井上
Shinya Miura
慎也 三浦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2777793A priority Critical patent/JPH06244093A/en
Publication of JPH06244093A publication Critical patent/JPH06244093A/en
Pending legal-status Critical Current

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

PURPOSE:To provide a technique of manufacturing a thin film multilayer substrate which can reduce product defective by preventing contamination and damage of a product pattern part when vacuum-chucking a substrate in a substrate processing process of a thin film multilayer substrate wherein a product pattern by a thin film layer is formed in both front and rear surfaces. CONSTITUTION:The title device is a manufacturing device used for a process for processing a surface by rotating a substrate such as resist application, development, etching and insulation film application in a thin film manufacturing process of a substrate. It has a plurality of vacuum attraction pads 2 to 5 which attract a plurality of places in a periphery of the rear of a substrate 1, and is constituted of a spin chuck 6, etc., which has a function which enables independent operation of the plurality of vacuum attraction pads 2 to 5. After the vacuum attraction pad 2 having a clearance to the substrate 1 is moved up and down to entirely eliminate the clearance, the substrate 1 is attracted and held to the vacuum attraction pads 2 to 5 by a vacuum source 8 through a tube path 7.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、基板保持方法およびそ
れを用いた薄膜多層基板の製造技術に関し、特にセラミ
ック基板などの表裏両面に薄膜層を積層する薄膜多層基
板の製造工程において、製品パターン部の汚染、損傷防
止による製品不良の低減が可能とされる基板保持方法な
らびにそれを用いた薄膜多層基板の製造方法および装置
に適用して有効な技術に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate holding method and a thin film multilayer substrate manufacturing technique using the same, and particularly to a product pattern in a thin film multilayer substrate manufacturing process in which thin film layers are laminated on both front and back surfaces of a ceramic substrate or the like. TECHNICAL FIELD The present invention relates to a substrate holding method capable of reducing product defects by preventing contamination and damage of parts, and a technique effectively applied to a thin film multilayer substrate manufacturing method and apparatus using the same.

【0002】[0002]

【従来の技術】たとえば、半導体などの薄膜製造工程の
レジスト塗布、現像、エッチング、絶縁膜塗布などの様
に基板を回転させて表面処理を行なう工程においては、
特開昭59−8340号公報に記載されるエッチング装
置のように、真空吸着チャックにより基板裏面の中央付
近を吸着する基板保持方法が用いられている。
2. Description of the Related Art For example, in the step of performing surface treatment by rotating a substrate such as resist coating, developing, etching, insulating film coating in a thin film manufacturing process for semiconductors, etc.
As in the etching device described in Japanese Patent Laid-Open No. 59-8340, a substrate holding method is used in which the vicinity of the center of the back surface of the substrate is sucked by a vacuum suction chuck.

【0003】この基板保持方法は、基板裏面に製品パタ
ーンを形成しない基板に対しては有効な方法であり、最
も広く用いられている。しかしながら、基板裏面に製品
パターンを形成する基板に対しては、製品パターン部を
汚染、損傷し、製品不良となる恐れがある。
This substrate holding method is an effective method for a substrate in which a product pattern is not formed on the back surface of the substrate, and is most widely used. However, for a substrate on which a product pattern is formed on the back surface of the substrate, the product pattern portion may be contaminated or damaged, resulting in a defective product.

【0004】これを解決する第1の方法として、基板裏
面に予めレジスト膜を形成して保護膜とし、基板裏面吸
着時の製品パターン部の汚染、損傷を防止して製品不良
をなくし、保護膜が不要となった時点で保護膜を除去す
る方法が考えられる。
As a first method to solve this, a protective film is formed by forming a resist film on the back surface of the substrate in advance to prevent contamination and damage of the product pattern portion at the time of adsorbing the back surface of the substrate to eliminate product defects and to protect the protective film. A method is conceivable in which the protective film is removed at the time when is unnecessary.

【0005】また、第2の方法として、製品として使用
する基板裏面の中央付近は吸着せず、製品として使用し
ない基板裏面の周辺部のみを吸着する基板保持方法が考
えられる。
As a second method, a substrate holding method in which the vicinity of the center of the back surface of the substrate used as a product is not adsorbed and only the peripheral portion of the back surface of the substrate not used as a product is adsorbed can be considered.

【0006】[0006]

【発明が解決しようとする課題】ところが、前記のよう
な従来技術、たとえば第1の保護膜法においては、製造
工程数が多くなり、製品パターン部の膜構成によっては
保護性と除去性を両立させることができず、製品パター
ン部の汚染、損傷を完全に防止して製品不良をなくすこ
とが困難である。
However, in the above-mentioned conventional technique, for example, the first protective film method, the number of manufacturing steps is increased, and both the protective property and the removability are compatible depending on the film structure of the product pattern portion. Therefore, it is difficult to completely prevent the contamination and damage of the product pattern portion and eliminate the product defect.

【0007】一方、第2の基板裏面周辺吸着法において
は、一般に基板周辺では基板の平坦性が悪く、このよう
に基板の平坦性が悪い場合には基板と吸着パッドの間に
隙間ができて真空漏れとなり、基板吸着が不十分で基板
保持ができなくなる。
On the other hand, in the second substrate back surface peripheral suction method, the flatness of the substrate is generally poor around the substrate, and when the flatness of the substrate is poor, a gap is formed between the substrate and the suction pad. A vacuum leak occurs and the substrate cannot be held due to insufficient substrate adsorption.

【0008】従って、従来の保護膜法および基板裏面周
辺吸着法は、いずれも薄膜多層配線基板のように基板の
表裏両面に製品パターンが有る基板の製造工程における
基板処理には良好に適用できないという問題がある。
Therefore, neither the conventional protective film method nor the substrate backside peripheral adsorption method can be applied well to the substrate processing in the manufacturing process of the substrate having the product patterns on both the front and back surfaces of the substrate like the thin film multilayer wiring substrate. There's a problem.

【0009】そこで、本発明の目的は、特に表裏両面に
薄膜層による製品パターンが形成される薄膜多層基板の
基板処理工程において、基板処理面の反対側の面を真空
吸着する基板保持方法を用いる場合でも、製品パターン
部の汚染、損傷を防止して製品不良を低減することがで
きる基板保持方法ならびにそれを用いた薄膜多層基板の
製造方法および装置を提供することにある。
Therefore, an object of the present invention is to use a substrate holding method in which a surface opposite to a substrate processing surface is vacuum-adsorbed, particularly in a substrate processing step of a thin film multilayer substrate in which product patterns of thin film layers are formed on both front and back surfaces. Even in such a case, it is an object of the present invention to provide a substrate holding method capable of preventing the product pattern portion from being contaminated and damaged and reducing product defects, and a thin film multilayer substrate manufacturing method and apparatus using the same.

【0010】本発明の前記ならびにその他の目的と新規
な特徴は、本明細書の記述および添付図面から明らかに
なるであろう。
The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

【0011】[0011]

【課題を解決するための手段】本願において開示される
発明のうち、代表的なものの概要を簡単に説明すれば、
下記のとおりである。
Among the inventions disclosed in the present application, a brief description will be given to the outline of typical ones.
It is as follows.

【0012】すなわち、本発明の基板保持方法は、基板
の裏面周辺の複数個所を吸着する複数の真空吸着パッド
を有し、この複数の真空吸着パッドが独立に動作可能な
機能を有するチャックを備え、このチャックにより基板
を保持するものである。
That is, the substrate holding method of the present invention has a plurality of vacuum suction pads for sucking a plurality of portions around the back surface of the substrate, and a chuck having a function of independently operating the plurality of vacuum suction pads. The chuck holds the substrate.

【0013】この場合に、前記複数の真空吸着パッドの
うちの3個所を固定し、残りの真空吸着パッドを独立に
動作可能とするようにしたものである。
In this case, three of the plurality of vacuum suction pads are fixed so that the remaining vacuum suction pads can be operated independently.

【0014】さらに、前記複数の真空吸着パッド毎に独
立な真空源により真空吸着するようにしたものである。
Further, each of the plurality of vacuum suction pads is vacuum-sucked by an independent vacuum source.

【0015】また、本発明の薄膜多層基板の製造方法お
よび装置は、前記基板保持方法を用い、基板の薄膜製造
に用いられるレジスト塗布装置、現像装置、エッチング
装置、絶縁膜塗布装置のように、レジスト塗布、現像、
エッチング、絶縁膜塗布などの表面処理工程において、
チャックの回転により基板を回転させて表面処理を行な
うものである。
Further, the method and apparatus for manufacturing a thin film multilayer substrate of the present invention uses the substrate holding method described above, such as a resist coating apparatus, a developing apparatus, an etching apparatus and an insulating film coating apparatus used for manufacturing a thin film on a substrate. Resist coating, development,
In surface treatment processes such as etching and insulating film coating,
The surface treatment is performed by rotating the substrate by rotating the chuck.

【0016】この場合に、前記基板として表裏両面に厚
膜パターンを有する厚膜配線基板を用い、この厚膜配線
基板の表裏両面の周辺の複数個所にダミーパターンを形
成するか、または厚膜パターンを形成しないようにした
ものである。
In this case, a thick film wiring board having thick film patterns on both front and back surfaces is used as the substrate, and dummy patterns are formed at a plurality of locations around the front and back surfaces of the thick film wiring board, or thick film patterns are formed. Is not formed.

【0017】また、前記基板として表裏両面に厚膜パタ
ーンを有する下地基板の両面に導体膜パターンまたは導
体膜パターンと絶縁膜とからなる薄膜層を有する薄膜多
層基板を用い、この薄膜多層基板の表裏両面の周辺の複
数個所にダミーパターンを形成するか、または薄膜層を
形成しないようにしたものである。
As the substrate, a thin film multilayer substrate having a conductor film pattern or a thin film layer composed of a conductor film pattern and an insulating film on both sides of a base substrate having thick film patterns on both sides is used as the substrate. A dummy pattern is formed at a plurality of locations on both sides, or a thin film layer is not formed.

【0018】[0018]

【作用】前記した基板保持方法ならびにそれを用いた薄
膜多層基板の製造方法および装置によれば、チャックに
独立に動作可能な複数の真空吸着パッドが備えられるこ
とにより、基板の反りなどにより平坦性が悪い場合に、
基板の保持面と真空吸着パッドとの隙間をなくすことが
でき、基板の吸着不良を防止することができる。
According to the above-mentioned substrate holding method and the method and apparatus for manufacturing a thin film multilayer substrate using the same, the chuck is provided with a plurality of independently operable vacuum suction pads, so that the flatness due to the warp of the substrate is caused. Is bad,
It is possible to eliminate the gap between the holding surface of the substrate and the vacuum suction pad, and prevent the suction failure of the substrate.

【0019】この場合に、3個所を除く残りの真空吸着
パッドのみが独立に動作可能とされることにより、真空
吸着パッドの動作を最小限に抑え、基板の平坦性が悪い
場合でも基板の吸着不良をなくし、基板を確実に吸着保
持することができる。
In this case, since only the remaining vacuum suction pads except the three locations can be operated independently, the operation of the vacuum suction pad is minimized and the suction of the substrate is suppressed even when the flatness of the substrate is poor. It is possible to eliminate defects and surely suck and hold the substrate.

【0020】さらに、複数の真空吸着パッド毎に独立に
真空吸着可能な真空源が接続されることにより、ある真
空吸着パッドと基板の保持面との隙間によって真空漏れ
が発生した場合でも、残りの真空吸着パッドにおいては
真空漏れが発生しないので、基板の吸着不良を防止して
確実な吸着保持が可能となる。
Further, by connecting a vacuum source capable of independently performing vacuum suction to each of the plurality of vacuum suction pads, even if a vacuum leak occurs due to a gap between a certain vacuum suction pad and the holding surface of the substrate, the remaining Since no vacuum leakage occurs in the vacuum suction pad, it is possible to prevent a suction failure of the substrate and securely hold the substrate.

【0021】これにより、特に基板の薄膜製造工程にお
けるレジスト塗布、現像、エッチング、絶縁膜塗布など
の表面処理工程において、基板の平坦度の影響を少なく
して基板の吸着不良の発生を抑制し、かつ所定の保持部
分を吸着することによって製品エリアの汚染、損傷を防
止して製品品質の向上を図ることができる。
Thus, particularly in the surface treatment process such as resist coating, development, etching, and insulating film coating in the substrate thin film manufacturing process, the influence of the flatness of the substrate is reduced to suppress the occurrence of substrate adsorption failure. Moreover, by adsorbing the predetermined holding portion, it is possible to prevent the product area from being contaminated and damaged, and to improve the product quality.

【0022】[0022]

【実施例1】図1は本発明の一実施例である基板保持方
法を用いた薄膜多層基板の製造装置の要部を示す側面
図、図2は本実施例の薄膜多層基板の製造装置に用いら
れる厚膜配線基板を示す平面図である。
Embodiment 1 FIG. 1 is a side view showing an essential part of a thin film multilayer substrate manufacturing apparatus using a substrate holding method according to an embodiment of the present invention, and FIG. 2 is a thin film multilayer substrate manufacturing apparatus of this embodiment. It is a top view which shows the thick film wiring board used.

【0023】まず、図1により本実施例の薄膜多層基板
の製造装置の要部構成を説明する。
First, the main structure of the thin-film multilayer substrate manufacturing apparatus of this embodiment will be described with reference to FIG.

【0024】本実施例の薄膜多層基板の製造装置は、た
とえば基板の薄膜製造工程のレジスト塗布、現像、エッ
チング、絶縁膜塗布のように基板を回転させて表面処理
を行なう工程に用いられる製造装置とされ、基板1の裏
面周辺の複数個所を吸着する複数の真空吸着パッド2〜
5を有し、この複数の真空吸着パッド2〜5が独立に動
作可能な機能を有するスピンチャック6などから構成さ
れている。
The thin-film multi-layer substrate manufacturing apparatus of this embodiment is used in a step of performing a surface treatment by rotating the substrate, such as resist coating, development, etching and insulating film coating in the thin-film manufacturing process of the substrate. And a plurality of vacuum suction pads 2 for sucking a plurality of places around the back surface of the substrate 1
5, the plurality of vacuum suction pads 2 to 5 are composed of a spin chuck 6 having a function of independently operating.

【0025】基板1は、真空吸着パッド2〜5(但し、
5は3の陰で見えない)の4個の上下方向に動作可能
で、基板1との接触を感知できる真空吸着パッド2〜5
を有する回転自由なスピンチャック6の上に搭載されて
おり、これらの真空吸着パッド2〜5およびスピンチャ
ック6は管通路7を介して真空源8に接続され、さらに
基板1の上方には薬液9を供給するノズル10が配置さ
れている。
The substrate 1 is composed of vacuum suction pads 2-5 (however,
(5 is not visible due to the shadow of 3) 4 vacuum suction pads 2 to 5 that can operate in the vertical direction and can detect the contact with the substrate 1.
Is mounted on a spin chuck 6 which can rotate freely, and these vacuum suction pads 2 to 5 and the spin chuck 6 are connected to a vacuum source 8 via a tube passage 7. A nozzle 10 for supplying 9 is arranged.

【0026】また、この場合の基板1としては、表裏両
面に厚膜パターンを有するセラミック基板などの厚膜配
線基板が用いられ、たとえば図2に示すように基板1の
表面は、厚膜製品パターン部11と、4組の厚膜ダミー
パターン部12および真空吸着パッド接触部13とから
構成されている。なお、基板1の裏面も同様の構成とな
っている。
Further, as the substrate 1 in this case, a thick film wiring substrate such as a ceramic substrate having thick film patterns on both front and back surfaces is used. For example, as shown in FIG. 2, the surface of the substrate 1 has a thick film product pattern. It is composed of a portion 11, four thick film dummy pattern portions 12 and a vacuum suction pad contact portion 13. The back surface of the substrate 1 has the same structure.

【0027】次に、本実施例の作用について説明する。Next, the operation of this embodiment will be described.

【0028】まず、基板1を搬送アーム(図示せず)に
よって搬送し、基板1の裏面の厚膜製品パターン部11
に接触せずに、厚膜ダミーパターン部12の真空吸着パ
ッド接触部13に合わせて真空吸着パッド2〜5を介し
てスピンチャック6の上に搭載する。
First, the substrate 1 is transported by a transport arm (not shown), and the thick film product pattern portion 11 on the back surface of the substrate 1 is transported.
It is mounted on the spin chuck 6 through the vacuum suction pads 2 to 5 in accordance with the vacuum suction pad contact portion 13 of the thick film dummy pattern portion 12 without contacting with.

【0029】そして、真空吸着パッド2〜5の接触セン
サー(図示せず)により基板1と真空吸着パッド2〜5
との隙間の有無をチェックし、たとえば隙間がある真空
吸着パッド2を上に動作させて4個所の真空吸着パッド
2〜5の隙間を全てなくした後、管通路7の開閉弁(図
示せず)を開いて真空源8により基板1を真空吸着パッ
ド2〜5に吸着保持する。
Then, the substrate 1 and the vacuum suction pads 2-5 are contacted by contact sensors (not shown) of the vacuum suction pads 2-5.
Check the presence or absence of a gap between the vacuum suction pad 2 and the vacuum suction pad 2 which has a gap to operate upward so as to eliminate all the gaps between the four vacuum suction pads 2 to 5, and then open / close valve (not shown) of the pipe passage 7 ) Is opened, and the substrate 1 is suction-held on the vacuum suction pads 2-5 by the vacuum source 8.

【0030】さらに、たとえばレジストなどの薬液9を
ノズル10から基板1上に供給し、スピンチャック6を
予め設定した回転条件で回転させて基板1上に薬液9を
所望の厚さに塗布する。これにより、基板1の表裏両面
にレジスト膜を形成することができる。
Further, a chemical liquid 9 such as a resist is supplied onto the substrate 1 from a nozzle 10, and the spin chuck 6 is rotated under a preset rotation condition to apply the chemical liquid 9 on the substrate 1 to a desired thickness. Thereby, a resist film can be formed on both front and back surfaces of the substrate 1.

【0031】従って、本実施例の薄膜多層基板の製造装
置によれば、複数の真空吸着パッド2〜5が独立に動作
可能なようにスピンチャック6に設けられることによ
り、基板1のソリが大きな場合でも4個所の真空吸着パ
ッド2〜5により基板1を確実に吸着保持できるので、
回転中に基板1がスピンチャック6から外れて飛ばされ
るようなことがなく、基板1を損傷する恐れがなくな
る。
Therefore, according to the thin-film multilayer substrate manufacturing apparatus of this embodiment, the plurality of vacuum suction pads 2 to 5 are provided on the spin chuck 6 so that they can be independently operated, so that the warp of the substrate 1 is large. Even in this case, the vacuum suction pads 2 to 5 at the four positions can surely suck and hold the substrate 1,
The substrate 1 is not detached from the spin chuck 6 and is not blown during the rotation, and there is no risk of damaging the substrate 1.

【0032】その上、基板1の保持面の厚膜製品パター
ン部11に接触せずに、厚膜ダミーパターン部12の真
空吸着パッド接触部13で基板1を吸着保持できるの
で、品質の良好な薄膜多層基板を得ることができる。
In addition, since the substrate 1 can be sucked and held by the vacuum suction pad contact portion 13 of the thick film dummy pattern portion 12 without contacting the thick film product pattern portion 11 on the holding surface of the substrate 1, the quality is good. A thin film multilayer substrate can be obtained.

【0033】[0033]

【実施例2】図3は本発明の他の実施例である基板保持
方法を用いた薄膜多層基板の製造装置の要部を示す側面
図、図4は本実施例の薄膜多層基板の製造装置に用いら
れる薄膜多層基板を示す平面図である。
[Embodiment 2] FIG. 3 is a side view showing an essential part of a thin film multilayer substrate manufacturing apparatus using a substrate holding method according to another embodiment of the present invention, and FIG. 4 is a thin film multilayer substrate manufacturing apparatus of this embodiment. FIG. 3 is a plan view showing a thin-film multilayer substrate used in the above.

【0034】本実施例の薄膜多層基板の製造装置は、実
施例1と同様に基板の薄膜製造工程のレジスト塗布、現
像、エッチング、絶縁膜塗布のように基板を回転させて
表面処理を行なう工程に用いられ、基板1aの裏面周辺
の複数個所を吸着する複数の真空吸着パッド2,3a〜
5aを有するスピンチャック6aなどから構成され、実
施例1との相違点は、複数の真空吸着パッド2,3a〜
5aのうちの真空吸着パッド3a〜5aの3個所を固定
し、残りの真空吸着パッド2のみを独立に動作可能とす
る点である。
In the thin-film multilayer substrate manufacturing apparatus of this embodiment, similar to the first embodiment, the steps of performing the surface treatment by rotating the substrate such as resist coating, development, etching and insulating film coating in the substrate thin-film manufacturing process. A plurality of vacuum suction pads 2, 3a for sucking a plurality of places around the back surface of the substrate 1a.
It is composed of a spin chuck 6a having 5a, etc., and is different from the first embodiment in that a plurality of vacuum suction pads 2, 3a.
The point is that the three vacuum suction pads 3a to 5a of 5a are fixed, and only the remaining vacuum suction pads 2 can be operated independently.

【0035】すなわち、図3に示すように、基板1aは
上下方向に動作可能な真空吸着パッド2と、動作固定の
真空吸着パッド3a〜5a(但し、5aは3aの陰で見
えない)との合計4個の基板1aとの接触を感知できる
真空吸着パッド2,3a〜5aを有する回転自由なスピ
ンチャック6aの上に搭載されている。
That is, as shown in FIG. 3, the substrate 1a includes a vacuum suction pad 2 which can be operated in the vertical direction and vacuum suction pads 3a to 5a whose operation is fixed (however, 5a cannot be seen because of the shadow of 3a). It is mounted on a rotatable spin chuck 6a having vacuum suction pads 2, 3a to 5a capable of sensing contact with a total of four substrates 1a.

【0036】また、この場合の基板1aとしては、表裏
両面に厚膜パターンを有する下地基板の両面に導体膜パ
ターンまたは導体膜パターンと絶縁膜とからなる薄膜層
を有する薄膜多層基板が用いられ、たとえば図4に示す
ように基板1aの表面は、厚膜製品パターン部11の上
に形成された薄膜製品パターン部14と、4組の厚膜ダ
ミーパターン部12の上に形成された薄膜ダミーパター
ン部15、および真空吸着パッド接触部13とから構成
されている。なお、基板1aの裏面も同様の構成となっ
ている。
Further, as the substrate 1a in this case, a thin film multilayer substrate having a conductor film pattern or a thin film layer composed of a conductor film pattern and an insulating film on both surfaces of a base substrate having thick film patterns on both front and back surfaces is used. For example, as shown in FIG. 4, the surface of the substrate 1a has a thin film product pattern portion 14 formed on the thick film product pattern portion 11 and a thin film dummy pattern formed on four sets of thick film dummy pattern portions 12. It is composed of a portion 15 and a vacuum suction pad contact portion 13. The back surface of the substrate 1a has the same structure.

【0037】そして、基板1aをスピンチャック6aの
上に搭載する場合には、基板1aの裏面の薄膜製品パタ
ーン部14に接触せずに、薄膜ダミーパターン部15の
真空吸着パッド接触部13に合わせて真空吸着パッド
2,3a〜5aを介してスピンチャック6aの上に搭載
する。
When the substrate 1a is mounted on the spin chuck 6a, it is aligned with the vacuum suction pad contact portion 13 of the thin film dummy pattern portion 15 without contacting the thin film product pattern portion 14 on the back surface of the substrate 1a. And is mounted on the spin chuck 6a via the vacuum suction pads 2, 3a to 5a.

【0038】その後、真空吸着パッド2,3a〜5aの
接触センサー(図示せず)により基板1aと真空吸着パ
ッド2,3a〜5aとの隙間の有無をチェックし、真空
吸着パッド2のみを上下に動作させることにより、4個
所の真空吸着パッド2,3a〜5aの隙間を全てなくし
て基板1aを真空吸着パッド2,3a〜5aに吸着保持
することができる。
After that, the presence or absence of a gap between the substrate 1a and the vacuum suction pads 2, 3a to 5a is checked by a contact sensor (not shown) on the vacuum suction pads 2, 3a to 5a, and only the vacuum suction pad 2 is moved up and down. By operating, the substrate 1a can be suction-held on the vacuum suction pads 2, 3a-5a by eliminating all the gaps between the four vacuum suction pads 2, 3a-5a.

【0039】従って、本実施例の薄膜多層基板の製造装
置によれば、上下方向に動作可能な真空吸着パッド2と
動作固定の真空吸着パッド3a〜5aとがスピンチャッ
ク6aに設けられることにより、真空吸着パッド2を最
小限に動作させ、実施例1と同様に、基板1aの平坦性
が悪い場合でも基板1aを確実に吸着保持して損傷を防
止することができ、かつ基板1aの薄膜製品パターン部
14に接触することがないので、品質の良好な薄膜多層
基板を得ることができる。
Therefore, according to the thin-film multi-layer substrate manufacturing apparatus of this embodiment, the spin chuck 6a is provided with the vacuum suction pad 2 operable in the vertical direction and the vacuum suction pads 3a to 5a whose operation is fixed. The vacuum suction pad 2 is operated to the minimum, and even when the flatness of the substrate 1a is poor, the substrate 1a can be surely sucked and held to prevent damage, and the thin film product of the substrate 1a can be prevented. Since there is no contact with the pattern portion 14, it is possible to obtain a thin film multi-layer substrate of good quality.

【0040】さらに、この薄膜多層基板を用いることに
より、汎用大形計算機などの装置の高性能化および省ス
ペース化を図ることができる。
Further, by using this thin film multilayer substrate, it is possible to achieve high performance and space saving of a device such as a general-purpose large computer.

【0041】[0041]

【実施例3】図5は本発明のさらに他の実施例である基
板保持方法を用いた薄膜多層基板の製造装置の要部を示
す側面図、図6は本実施例の薄膜多層基板の製造装置に
おける変形例を示す側面図である。
[Embodiment 3] FIG. 5 is a side view showing an essential part of an apparatus for manufacturing a thin film multilayer substrate using a substrate holding method according to still another embodiment of the present invention, and FIG. 6 is a method for manufacturing the thin film multilayer substrate of this embodiment. It is a side view which shows the modification in an apparatus.

【0042】本実施例の薄膜多層基板の製造装置は、実
施例1および2と同様に基板の薄膜製造工程のレジスト
塗布、現像、エッチング、絶縁膜塗布のように基板を回
転させて表面処理を行なう工程に用いられ、基板1aの
裏面周辺の複数個所を吸着する複数の真空吸着パッド2
〜5を有するスピンチャック6bなどから構成され、実
施例1および2との相違点は、真空吸着パッド2〜5毎
に独立な真空源8a〜8dにより真空吸着する点であ
る。
The thin-film multi-layer substrate manufacturing apparatus of this embodiment performs the surface treatment by rotating the substrate like resist coating, developing, etching and insulating film coating in the thin-film manufacturing process of the substrate as in the first and second embodiments. A plurality of vacuum suction pads 2 which are used in the steps to be performed and which suction a plurality of places around the back surface of the substrate 1a
5 to 5 and is different from the first and second embodiments in that each vacuum suction pad 2 to 5 is vacuum-sucked by an independent vacuum source 8a to 8d.

【0043】すなわち、図5に示すように、基板1aは
上下方向に動作可能な真空吸着パッド2〜5(但し、5
は3の陰で見えない)の合計4個の基板1aとの接触を
感知できる真空吸着パッド2〜5を有する回転自由なス
ピンチャック6bの上に搭載されており、これらの真空
吸着パッド2〜5は管通路7a〜7dを介して独立の真
空源8a〜8dにそれぞれ接続されている。
That is, as shown in FIG. 5, the substrate 1a has the vacuum suction pads 2 to 5 (however, 5
Is not visible in the shade of 3), and is mounted on a spin chuck 6b which is free to rotate and which has vacuum suction pads 2 to 5 capable of sensing contact with a total of four substrates 1a. Reference numeral 5 is connected to independent vacuum sources 8a to 8d via tube passages 7a to 7d, respectively.

【0044】そして、基板1aをスピンチャック6bの
上に搭載する場合には、まず基板1aを搬送アーム(図
示せず)によって搬送し、スピンチャック6bの上方に
移動させる。その後、搬送アームの爪(図示せず)の
内、真空吸着パッド2に対応するもののみを基板1aか
ら外して遠ざけて真空吸着パッド2を上方に動かし、接
触センサー(図示せず)により基板1aと真空吸着パッ
ド2の隙間なしをチェックした後、管通路7aの開閉弁
(図示せず)を開いて真空源8aにより基板1aを真空
吸着パッド2に吸着保持する。
When mounting the substrate 1a on the spin chuck 6b, first, the substrate 1a is carried by a carrying arm (not shown) and moved above the spin chuck 6b. After that, among the claws (not shown) of the transfer arm, only the one corresponding to the vacuum suction pad 2 is removed from the substrate 1a and moved away to move the vacuum suction pad 2 upward, and the substrate 1a is moved by the contact sensor (not shown). After checking that there is no gap between the vacuum suction pad 2 and the vacuum suction pad 2, the opening / closing valve (not shown) of the pipe passage 7a is opened and the substrate 1a is suction-held on the vacuum suction pad 2 by the vacuum source 8a.

【0045】同様にして、搬送アームの爪の内、順に真
空吸着パッド3〜5に対応するもののみを基板1aから
外して遠ざけて真空吸着パッド3〜5を上方に動かし、
基板1aと真空吸着パッド3〜5の隙間なしをチェック
した後、管通路7b〜7dを通じて真空源8b〜8dに
より基板1aを真空吸着パッド3〜5に吸着保持する。
以上のようにして、真空吸着パッド2〜5は対応する搬
送アームの爪から基板1aを順次受け取り、吸着保持す
ることができる。
Similarly, among the claws of the transfer arm, only those corresponding to the vacuum suction pads 3 to 5 are sequentially removed from the substrate 1a and moved away, and the vacuum suction pads 3 to 5 are moved upward.
After checking that there is no gap between the substrate 1a and the vacuum suction pads 3-5, the substrate 1a is suction-held on the vacuum suction pads 3-5 by the vacuum sources 8b-8d through the pipe passages 7b-7d.
As described above, the vacuum suction pads 2 to 5 can sequentially receive the substrates 1a from the corresponding claws of the transfer arm and suction-hold them.

【0046】従って、本実施例の薄膜多層基板の製造装
置によれば、上下方向に動作可能な真空吸着パッド2〜
5が独立の真空源8a〜8dにそれぞれ接続されること
により、実施例1および2と同様に、基板1aの平坦性
が悪い場合でも基板1aを確実に吸着保持して損傷を防
止することができ、かつ基板1aの搬送時と処理時とで
基板1aの同一の薄膜ダミーパターン部15に接触する
のみで、基板1aの薄膜製品パターン部14に接触せず
に基板1aを吸着保持できるので、有効製品面積の広い
品質の良好な薄膜多層基板を得ることができる。
Therefore, according to the thin-film multilayer substrate manufacturing apparatus of this embodiment, the vacuum suction pads 2 to 2 which can be operated in the vertical direction are used.
By connecting 5 to the independent vacuum sources 8a to 8d, respectively, like the first and second embodiments, even if the flatness of the substrate 1a is poor, the substrate 1a can be surely sucked and held to prevent damage. Since the substrate 1a can be sucked and held without coming into contact with the thin film product pattern portion 14 of the substrate 1a only by contacting the same thin film dummy pattern portion 15 of the substrate 1a during transportation and processing of the substrate 1a, It is possible to obtain a good quality thin film multilayer substrate having a wide effective product area.

【0047】その上、たとえば1個所の真空吸着パッド
2と基板1aとの隙間により真空漏れが発生した場合で
も、他の真空吸着パッド3〜5においては真空漏れが発
生しないので、残りの3個所の真空吸着パッド3〜5に
より確実に吸着して基板1aの吸着不良を防止すること
ができる。
Furthermore, for example, even if a vacuum leak occurs due to the gap between the vacuum suction pad 2 and the substrate 1a at one place, no vacuum leak occurs at the other vacuum suction pads 3 to 5, so that the remaining three places. The vacuum suction pads 3 to 5 can surely suction and prevent the suction failure of the substrate 1a.

【0048】この場合に、たとえば図6に示すように、
スピンチャック6cの全ての真空吸着パッド2a〜5a
を動作固定とした場合にも、基板1aの平坦性が悪く、
たとえ真空吸着パッド2aと基板1aとの隙間により真
空漏れが発生しても、残りの真空吸着パッド3a〜5a
により基板1aを確実に吸着保持することが可能とな
る。
In this case, for example, as shown in FIG.
All the vacuum suction pads 2a to 5a of the spin chuck 6c
Even when the operation is fixed, the flatness of the substrate 1a is poor,
Even if a vacuum leak occurs due to the gap between the vacuum suction pad 2a and the substrate 1a, the remaining vacuum suction pads 3a to 5a.
As a result, the substrate 1a can be reliably sucked and held.

【0049】以上、本発明者によってなされた発明を実
施例1〜3に基づき具体的に説明したが、本発明は前記
実施例に限定されるものではなく、その要旨を逸脱しな
い範囲で種々変更可能であることはいうまでもない。
Although the invention made by the present inventor has been specifically described based on the first to third embodiments, the present invention is not limited to the above embodiments, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

【0050】たとえば、前記実施例の薄膜多層基板の製
造装置については、スピンチャック6,6a〜6cによ
り基板1,1aを回転させて表面処理を行なう場合につ
いて説明したが、本発明は前記実施例に限定されるもの
ではなく、単に基板1を保持する図7〜図10のような
チャック16,16a〜16cを備えた装置などについ
ても広く適用可能である。
For example, in the thin film multilayer substrate manufacturing apparatus of the above-described embodiment, the case where the substrates 1, 1a are rotated by the spin chucks 6, 6a to 6c to perform the surface treatment has been described. However, the present invention is not limited to the above, but can be widely applied to an apparatus including chucks 16 and 16a to 16c as shown in FIGS.

【0051】すなわち、図7の場合には、基板1を保持
するチャック16に、基板1の裏面周辺の複数個所を吸
着する複数の真空吸着パッド2〜5が独立に動作可能に
設けられた構造になっており、基板1の製品パターン部
に接触することなく、これらの真空吸着パッド2〜5を
上下動作させることによって基板1を確実に保持するこ
とができる。同様に、図8の構造は、3個所の真空吸着
パッド3a〜5aを固定し、残りの真空吸着パッド2を
独立に動作可能としたチャック16aの場合である。
That is, in the case of FIG. 7, the chuck 16 for holding the substrate 1 is provided with a plurality of vacuum suction pads 2-5 for independently sucking a plurality of portions around the back surface of the substrate 1 so as to be independently operable. Therefore, the substrate 1 can be reliably held by vertically moving these vacuum suction pads 2 to 5 without contacting the product pattern portion of the substrate 1. Similarly, the structure of FIG. 8 is the case of the chuck 16a in which the three vacuum suction pads 3a to 5a are fixed and the remaining vacuum suction pads 2 can be independently operated.

【0052】さらに、図9のチャック16bは、真空吸
着パッド2,3a〜5a毎に独立な真空源8a〜8dに
より真空吸着するものであり、いずれかの真空吸着パッ
ド2と基板1との間で真空漏れが発生した場合でも、他
の真空吸着パッド3a〜5aにより確実に基板1を吸着
保持することができる。また、これらを組み合わせたも
のが、図10のような全ての真空吸着パッド2a〜5a
が固定されたチャック16cによる構造となっている。
Further, the chuck 16b of FIG. 9 is adapted to perform vacuum suction by the independent vacuum sources 8a to 8d for each of the vacuum suction pads 2 and 3a to 5a. Even if a vacuum leak occurs, the substrate 1 can be surely sucked and held by the other vacuum suction pads 3a to 5a. Further, a combination of these is used for all the vacuum suction pads 2a to 5a as shown in FIG.
Has a structure in which the chuck 16c is fixed.

【0053】また、実施例1においては、基板1の表面
に厚膜ダミーパターン部12を形成した厚膜配線基板と
し、さらに実施例2の基板には、厚膜ダミーパターン部
12の上に薄膜ダミーパターン部15を形成した薄膜多
層基板を用いた場合について説明したが、厚膜および薄
膜ダミーパターン部12,15を形成する代わりに、厚
膜層および薄膜層を形成しない場合についても適用可能
である。
In the first embodiment, the thick film wiring board is formed by forming the thick film dummy pattern portion 12 on the surface of the substrate 1. Further, in the substrate of the second embodiment, a thin film is formed on the thick film dummy pattern portion 12. Although the case of using the thin film multilayer substrate having the dummy pattern portion 15 formed thereon has been described, the present invention is also applicable to the case where the thick film layer and the thin film layer are not formed instead of forming the thick film and thin film dummy pattern portions 12 and 15. is there.

【0054】以上の説明では、主として本発明者によっ
てなされた発明をその利用分野である基板の薄膜製造工
程のレジスト塗布、現像、エッチング、絶縁膜塗布など
に用いられる製造装置に適用した場合について説明した
が、これに限定されるものではなく、表裏両面に製品パ
ターンを有する他の基板、他の表面処理工程などの製造
装置についても広く適用可能であり、特に厚膜パターン
を有する下地基板の両面に導体膜パターンまたは導体膜
パターンと絶縁膜とからなる薄膜層を有する多層基板の
製造技術として良好である。
In the above description, the invention made by the present inventor is mainly applied to a manufacturing apparatus used for resist coating, developing, etching, insulating film coating, etc. in the thin film manufacturing process of substrates, which is the field of use of the invention. However, the present invention is not limited to this, and is widely applicable to other substrates having product patterns on the front and back sides, manufacturing equipment such as other surface treatment processes, and especially to both sides of a base substrate having a thick film pattern. It is a good technique for manufacturing a multilayer substrate having a conductor film pattern or a thin film layer composed of a conductor film pattern and an insulating film.

【0055】[0055]

【発明の効果】本願において開示される発明のうち、代
表的なものによって得られる効果を簡単に説明すれば、
下記のとおりである。
The effects obtained by the typical ones of the inventions disclosed in the present application will be briefly described as follows.
It is as follows.

【0056】(1).基板の裏面周辺の複数個所を吸着する
複数の真空吸着パッドを有し、この複数の真空吸着パッ
ドが独立に動作可能な機能を有するチャックを備え、こ
のチャックによって基板を保持することにより、基板の
平坦性が悪い場合でも、基板の保持面と真空吸着パッド
との隙間をなくすことができるので、基板の吸着不良を
防止することが可能となる。
(1). A plurality of vacuum suction pads for sucking a plurality of portions around the back surface of the substrate are provided, and a chuck having a function of independently operating the plurality of vacuum suction pads is provided. By holding, the gap between the holding surface of the substrate and the vacuum suction pad can be eliminated even if the flatness of the substrate is poor, so that it is possible to prevent the suction failure of the substrate.

【0057】(2).複数の真空吸着パッドのうちの3個所
を固定し、残りの真空吸着パッドを独立に動作可能とす
ることにより、真空吸着パッドの動作を最小限に抑え、
基板の平坦性が悪い場合でも吸着不良をなくすことがで
きるので、基板を確実に吸着保持することが可能とな
る。
(2). By fixing three of the plurality of vacuum suction pads and allowing the remaining vacuum suction pads to operate independently, the operation of the vacuum suction pads is minimized,
Even if the flatness of the substrate is poor, the suction failure can be eliminated, so that the substrate can be securely suction-held.

【0058】(3).複数の真空吸着パッド毎に独立な真空
源によって真空吸着することにより、いずれかの真空吸
着パッドと基板の保持面との隙間によって真空漏れが発
生した場合でも、残りの真空吸着パッドにおいては真空
漏れが発生しないので、基板の吸着不良を防止して確実
な吸着保持が可能となる。
(3) By vacuum-sucking a plurality of vacuum suction pads by an independent vacuum source, even if a vacuum leak occurs due to a gap between any of the vacuum suction pads and the holding surface of the substrate, the remaining Since no vacuum leakage occurs in the vacuum suction pad, it is possible to prevent a suction failure of the substrate and securely hold the substrate.

【0059】(4).特に基板の薄膜製造工程におけるレジ
スト塗布、現像、エッチング、絶縁膜塗布のように基板
を回転させて表面処理を行なう工程に用いることによ
り、基板の平坦度の影響を少なくして基板の吸着不良の
発生を抑制し、処理工程中に基板の落下などによる損傷
がないので、製造される基板の歩留の向上が可能とされ
る薄膜多層基板の製造方法および装置を得ることができ
る。
(4) The influence of the flatness of the substrate can be reduced by using it in the step of performing the surface treatment by rotating the substrate such as resist coating, development, etching, and insulating film coating in the thin film manufacturing process of the substrate. A method and apparatus for manufacturing a thin-film multilayer substrate that suppresses the occurrence of defective adsorption of a substrate and does not suffer damage due to the substrate dropping during a processing step, thus improving the yield of the manufactured substrate. be able to.

【0060】(5).前記(4) により、基板の周辺部分の製
品パターン以外の一部のみを確実に吸着保持できるの
で、基板の表裏両面に製品パターンを形成する場合でも
製品パターンの損傷、汚染がなく、製造される基板の品
質の向上が可能とされる薄膜多層基板の製造方法および
装置を得ることができる。
(5) According to the above (4), since only a part other than the product pattern in the peripheral portion of the substrate can be securely adsorbed and held, the product pattern is not damaged even when the product pattern is formed on both front and back surfaces of the substrate. It is possible to obtain a method and an apparatus for manufacturing a thin-film multilayer substrate, which is free from contamination and enables the quality of the manufactured substrate to be improved.

【0061】(6).前記(4) により、基板の吸着保持部分
のトータル面積が小さくなるので、製品エリア面積の拡
大が可能とされる薄膜多層基板の製造方法および装置を
得ることができる。
(6) Due to the above (4), the total area of the suction-holding portion of the substrate becomes small, so that the thin film multilayer substrate manufacturing method and apparatus capable of expanding the product area can be obtained.

【0062】(7).前記(4) により、従来のように基板の
吸着保持面に保護膜を形成する必要がないので、製造工
数の低減が可能とされる薄膜多層基板の製造方法および
装置を得ることができる。
(7) According to the above (4), since it is not necessary to form a protective film on the adsorption holding surface of the substrate as in the conventional case, a manufacturing method and apparatus of a thin film multilayer substrate capable of reducing manufacturing man-hours. Can be obtained.

【0063】(8).前記(4) により、たとえば自動化装置
などに用いた場合に、自動化装置が基板の吸着不良など
で停止することがないので、自動化装置による無人運転
および省力化が可能とされる薄膜多層基板の製造方法お
よび装置を得ることができる。
(8) According to the above (4), when used in, for example, an automation device, the automation device does not stop due to a defective adsorption of the substrate, etc., so that unattended operation and labor saving by the automation device are possible. It is possible to obtain a method and an apparatus for manufacturing a thin film multilayer substrate.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例1である基板保持方法を用いた
薄膜多層基板の製造装置の要部を示す側面図である。
FIG. 1 is a side view showing a main part of a thin-film multilayer substrate manufacturing apparatus using a substrate holding method according to a first embodiment of the present invention.

【図2】実施例1の薄膜多層基板の製造装置に用いられ
る厚膜配線基板を示す平面図である。
FIG. 2 is a plan view showing a thick film wiring substrate used in the thin film multilayer substrate manufacturing apparatus in Example 1;

【図3】本発明の実施例2である基板保持方法を用いた
薄膜多層基板の製造装置の要部を示す側面図である。
FIG. 3 is a side view showing a main part of a thin-film multilayer substrate manufacturing apparatus using a substrate holding method according to a second embodiment of the present invention.

【図4】実施例2の薄膜多層基板の製造装置に用いられ
る薄膜多層基板を示す平面図である。
FIG. 4 is a plan view showing a thin film multilayer substrate used in a thin film multilayer substrate manufacturing apparatus in Example 2;

【図5】本発明の実施例3である基板保持方法を用いた
薄膜多層基板の製造装置の要部を示す側面図である。
FIG. 5 is a side view showing a main part of a thin-film multilayer substrate manufacturing apparatus using a substrate holding method according to a third embodiment of the present invention.

【図6】実施例3の薄膜多層基板の製造装置における変
形例を示す側面図である。
FIG. 6 is a side view showing a modified example of the thin-film multilayer substrate manufacturing apparatus of the third embodiment.

【図7】本発明において、基板保持方法における製造装
置の要部を示す側面図である。
FIG. 7 is a side view showing the main part of the manufacturing apparatus in the substrate holding method in the present invention.

【図8】本発明において、基板保持方法における他の製
造装置の要部を示す側面図である。
FIG. 8 is a side view showing a main part of another manufacturing apparatus in the substrate holding method in the present invention.

【図9】本発明において、基板保持方法におけるさらに
他の製造装置の要部を示す側面図である。
FIG. 9 is a side view showing a main part of still another manufacturing apparatus in the substrate holding method in the present invention.

【図10】本発明において、基板保持方法におけるさら
に他の製造装置の要部を示す側面図である。
FIG. 10 is a side view showing a main part of still another manufacturing apparatus in the substrate holding method in the present invention.

【符号の説明】[Explanation of symbols]

1,1a 基板 2,2a 真空吸着パッド 3,3a 真空吸着パッド 4,4a 真空吸着パッド 5,5a 真空吸着パッド 6,6a〜6c スピンチャック 7,7a〜7d 管通路 8,8a〜8d 真空源 9 薬液 10 ノズル 11 厚膜製品パターン部 12 厚膜ダミーパターン部 13 真空吸着パッド接触部 14 薄膜製品パターン部 15 薄膜ダミーパターン部 16,16a〜16c チャック 1, 1a Substrate 2, 2a Vacuum suction pad 3, 3a Vacuum suction pad 4, 4a Vacuum suction pad 5, 5a Vacuum suction pad 6, 6a-6c Spin chuck 7, 7a-7d Pipe passage 8, 8a-8d Vacuum source 9 Chemicals 10 Nozzle 11 Thick film product pattern part 12 Thick film dummy pattern part 13 Vacuum suction pad contact part 14 Thin film product pattern part 15 Thin film dummy pattern part 16, 16a-16c Chuck

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H05K 3/46 Y 6921−4E // B23Q 3/08 A 8612−3C (72)発明者 井上 隆史 神奈川県横浜市戸塚区吉田町292番地 株 式会社日立製作所生産技術研究所内 (72)発明者 三浦 慎也 神奈川県秦野市堀山下1番地 株式会社日 立製作所汎用コンピュータ事業部内─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Internal reference number FI Technical display location H05K 3/46 Y 6921-4E // B23Q 3/08 A 8612-3C (72) Inventor Takashi Inoue 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa, Ltd. Production Engineering Research Laboratory, Hitachi, Ltd. (72) Inventor Shinya Miura 1 Horiyamashita, Hadano-shi, Hadano, Kanagawa Pref., General Computer Division

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 基板の裏面周辺の複数個所を吸着する複
数の真空吸着パッドを有し、該複数の真空吸着パッドが
独立に動作可能な機能を有するチャックを備え、該チャ
ックにより前記基板を保持することを特徴とする基板保
持方法。
1. A chuck having a plurality of vacuum suction pads for sucking a plurality of portions around the back surface of a substrate, the plurality of vacuum suction pads having an independently operable function, and holding the substrate by the chuck. A method for holding a substrate, comprising:
【請求項2】 請求項1記載の基板保持方法において、
前記複数の真空吸着パッドのうちの3個所を固定し、残
りの真空吸着パッドを独立に動作可能とすることを特徴
とする基板保持方法。
2. The substrate holding method according to claim 1, wherein
A method for holding a substrate, characterized in that three of the plurality of vacuum suction pads are fixed, and the remaining vacuum suction pads can be operated independently.
【請求項3】 請求項1または2記載の基板保持方法に
おいて、前記複数の真空吸着パッド毎に独立な真空源に
より真空吸着することを特徴とする基板保持方法。
3. The substrate holding method according to claim 1, wherein each of the plurality of vacuum suction pads is vacuum-sucked by an independent vacuum source.
【請求項4】 請求項1、2または3記載の基板保持方
法を用い、前記基板の薄膜製造工程のレジスト塗布、現
像、エッチング、絶縁膜塗布のように基板を回転させて
表面処理を行なう工程において、前記チャックの回転に
より前記基板を回転させて表面処理を行なうことを特徴
とする薄膜多層基板の製造方法。
4. A step of performing a surface treatment by rotating the substrate, such as resist coating, developing, etching and insulating film coating in the substrate thin film manufacturing step, using the substrate holding method according to claim 1, 2 or 3. 3. The method for manufacturing a thin film multilayer substrate according to, wherein the substrate is rotated by rotating the chuck to perform a surface treatment.
【請求項5】 請求項1、2または3記載の基板保持方
法を用い、前記基板の薄膜製造に用いられるレジスト塗
布装置、現像装置、エッチング装置、絶縁膜塗布装置の
ように基板を回転させて表面処理を行なう装置におい
て、前記チャックの回転により前記基板を回転させて表
面処理を行なうことを特徴とする薄膜多層基板の製造装
置。
5. The substrate holding method according to claim 1, 2 or 3, wherein the substrate is rotated like a resist coating device, a developing device, an etching device, or an insulating film coating device used for manufacturing a thin film of the substrate. An apparatus for performing a surface treatment, wherein the substrate is rotated by rotating the chuck to perform the surface treatment.
【請求項6】 請求項5記載の薄膜多層基板の製造装置
において、前記基板として表裏両面に厚膜パターンを有
する厚膜配線基板を用い、該厚膜配線基板の表裏両面の
周辺の複数個所にダミーパターンを形成するか、または
前記厚膜パターンを形成しないことを特徴とする基板保
持方法を用いた薄膜多層基板の製造装置。
6. The thin-film multilayer substrate manufacturing apparatus according to claim 5, wherein a thick film wiring board having thick film patterns on both front and back surfaces is used as the substrate, and the thick film wiring board is provided at a plurality of locations around both front and back surfaces of the thick film wiring board. An apparatus for manufacturing a thin-film multilayer substrate using a substrate holding method, wherein a dummy pattern is formed or the thick film pattern is not formed.
【請求項7】 請求項5記載の薄膜多層基板の製造装置
において、前記基板として表裏両面に厚膜パターンを有
する下地基板の両面に導体膜パターンまたは導体膜パタ
ーンと絶縁膜とからなる薄膜層を有する薄膜多層基板を
用い、該薄膜多層基板の表裏両面の周辺の複数個所にダ
ミーパターンを形成するか、または前記薄膜層を形成し
ないことを特徴とする基板保持方法を用いた薄膜多層基
板の製造装置。
7. The thin-film multilayer substrate manufacturing apparatus according to claim 5, wherein a conductive film pattern or a thin film layer including a conductive film pattern and an insulating film is formed on both surfaces of a base substrate having thick film patterns on both front and back surfaces as the substrate. Using the thin-film multi-layer substrate having the above, a dummy pattern is formed at a plurality of positions on both sides of the front and back of the thin-film multi-layer substrate, or the thin-film multi-layer substrate is not formed. apparatus.
JP2777793A 1993-02-17 1993-02-17 Substrate holding method, and method and device for manufacture of thin film multilayer substrate by using it Pending JPH06244093A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2777793A JPH06244093A (en) 1993-02-17 1993-02-17 Substrate holding method, and method and device for manufacture of thin film multilayer substrate by using it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2777793A JPH06244093A (en) 1993-02-17 1993-02-17 Substrate holding method, and method and device for manufacture of thin film multilayer substrate by using it

Publications (1)

Publication Number Publication Date
JPH06244093A true JPH06244093A (en) 1994-09-02

Family

ID=12230410

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2777793A Pending JPH06244093A (en) 1993-02-17 1993-02-17 Substrate holding method, and method and device for manufacture of thin film multilayer substrate by using it

Country Status (1)

Country Link
JP (1) JPH06244093A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11150176A (en) * 1997-11-18 1999-06-02 Tokyo Electron Ltd Method and equipment for substrate holding, and substrate processing method
JP2001113435A (en) * 1999-10-13 2001-04-24 Ibiden Co Ltd Sucking member, securing device, and cutting device for substrate
JP2011253841A (en) * 2010-05-31 2011-12-15 Sumco Corp Wafer holder
CN102403252A (en) * 2011-10-19 2012-04-04 嘉兴科民电子设备技术有限公司 Automatic silicon chip mounting machine assisting etching process
WO2014152977A1 (en) * 2013-03-14 2014-09-25 Applied Materials, Inc. Apparatus and methods for wafer chucking on a susceptor for ald
JP2020031150A (en) * 2018-08-23 2020-02-27 日本特殊陶業株式会社 Vacuum chuck and manufacturing method thereof
JP6836003B1 (en) * 2020-08-27 2021-02-24 信越エンジニアリング株式会社 Work separation device and work separation method
JP2022533537A (en) * 2019-05-10 2022-07-25 アプライド マテリアルズ インコーポレイテッド Substrate structuring method

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11150176A (en) * 1997-11-18 1999-06-02 Tokyo Electron Ltd Method and equipment for substrate holding, and substrate processing method
JP2001113435A (en) * 1999-10-13 2001-04-24 Ibiden Co Ltd Sucking member, securing device, and cutting device for substrate
JP4538872B2 (en) * 1999-10-13 2010-09-08 イビデン株式会社 Substrate cutting device
JP2011253841A (en) * 2010-05-31 2011-12-15 Sumco Corp Wafer holder
CN102403252A (en) * 2011-10-19 2012-04-04 嘉兴科民电子设备技术有限公司 Automatic silicon chip mounting machine assisting etching process
WO2014152977A1 (en) * 2013-03-14 2014-09-25 Applied Materials, Inc. Apparatus and methods for wafer chucking on a susceptor for ald
JP2020031150A (en) * 2018-08-23 2020-02-27 日本特殊陶業株式会社 Vacuum chuck and manufacturing method thereof
JP2022533537A (en) * 2019-05-10 2022-07-25 アプライド マテリアルズ インコーポレイテッド Substrate structuring method
JP6836003B1 (en) * 2020-08-27 2021-02-24 信越エンジニアリング株式会社 Work separation device and work separation method
US11251058B1 (en) 2020-08-27 2022-02-15 Shin-Etsu Engineering Co., Ltd. Workpiece-separating device and workpiece-separating method
JP2022039031A (en) * 2020-08-27 2022-03-10 信越エンジニアリング株式会社 Work-piece separation device and work-piece separation method

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