JPH06239632A - Quartz crucible for pulling up silicon single crystal and its production - Google Patents

Quartz crucible for pulling up silicon single crystal and its production

Info

Publication number
JPH06239632A
JPH06239632A JP28398393A JP28398393A JPH06239632A JP H06239632 A JPH06239632 A JP H06239632A JP 28398393 A JP28398393 A JP 28398393A JP 28398393 A JP28398393 A JP 28398393A JP H06239632 A JPH06239632 A JP H06239632A
Authority
JP
Japan
Prior art keywords
crucible
quartz crucible
quartz
hole
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28398393A
Other languages
Japanese (ja)
Other versions
JP3278786B2 (en
Inventor
Yoshiyuki Tsuji
義行 辻
Hitoshi Takeuchi
均 竹内
Shin Takeshita
臣 武下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Materials Quartz Corp
Original Assignee
Mitsubishi Materials Quartz Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Quartz Corp filed Critical Mitsubishi Materials Quartz Corp
Priority to JP28398393A priority Critical patent/JP3278786B2/en
Publication of JPH06239632A publication Critical patent/JPH06239632A/en
Application granted granted Critical
Publication of JP3278786B2 publication Critical patent/JP3278786B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002Crucibles or containers
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00Other methods of shaping glass
    • C03B19/09Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10Crucibles or containers for supporting the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

Abstract

PURPOSE:To obtain a quartz crucible, safely and surely conveyable by a mechanical means and readily installed and removed from a single crystal pulling up apparatus by forming through-holes, recessed parts or protrusions in positions without interfering the installation and removal from a carbon crucible in the upper part of sidewall. CONSTITUTION:The tip 11 of a quartz crucible 10 is regulated to a height protruding from a carbon crucible and through-holes 21, recessed parts or protrusions are formed as an engaging means in the tip 11. A hole for inserting a forming jig is formed in a sidewall of a rotating mold and the forming jig is kept in a state thereof passed through the holes and inserted into a quartz powder layer deposited on the inner peripheral surface of the rotating mold. The quartz powder layer is then thermally melted to perform crucible forming operation. After forming the crucible, the forming jig is pulled out to produce the crucible as a method for producing thereof. Since this crucible has the engaging means for lifting, it can safely and surely be conveyed by a mechanical means and installation and removal from the single crystal pulling up apparatus can readily be carried out. Thereby, labor for operation by the man power can be saved and the crucible can be prevented from being contaminated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は多結晶シリコンを溶融し
て単結晶シリコンを引上げる際に用いられる石英ルツボ
とその製造方法に関する。詳しくは、ルツボの持運びや
シリコン単結晶引上げ装置への装着などを容易にするた
めルツボの吊下げ用係合手段を設けた石英ルツボとその
製造方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quartz crucible used for melting polycrystalline silicon and pulling up single crystal silicon, and a method for producing the same. More specifically, the present invention relates to a quartz crucible provided with engaging means for suspending the crucible for facilitating carrying of the crucible and attachment to a silicon single crystal pulling apparatus, and a method for manufacturing the same.

【0002】[0002]

【従来技術およびその課題】従来、半導体用シリコン単
結晶は、加熱用のカーボンルツボに石英ルツボを内装
し、該石英ルツボに原料の多結晶シリコンを入れて加熱
溶融し、このシリコン融液から単結晶シリコンを引上げ
る方法によって主に製造されている。上記石英ルツボの
形状は、目的とするシリコン単結晶の大きさによっても
異なるが、典型的には口径および高さが約40cm程度
の大きさで平底ないし緩い湾曲状の底部に有するもので
ある。このようなルツボは、石英粉体を原料とし、回転
モールドアーク溶融法によって主に製造されるが、製造
法の都合上、石英ルツボそれ自体は搬送を補助するため
の手段を有していない。しかしシリコン単結晶の大型化
に伴いルツボも大口径化する傾向にあり、例えば口径2
4インチ 、重量30Kg程度の大きさの石英ルツボが製造さ
れており、その重量と大きさのために持運びやカーボン
ルツボへの装着が問題となっている。すなわち、石英ル
ツボはガラス製品であるために衝撃に弱いので機械的に
把持して移送するのが難しく、しかも従来の石英ルツボ
には取手などの手段が設けられていないために吊下げて
移送することもできず、専ら作業員による人手によって
持ち運ぶため、安全性や汚染の問題がある。
2. Description of the Related Art Conventionally, a silicon single crystal for a semiconductor has a quartz crucible provided in a carbon crucible for heating, and polycrystalline silicon as a raw material is put into the quartz crucible and melted by heating. It is mainly manufactured by the method of pulling crystalline silicon. The shape of the quartz crucible varies depending on the size of the intended silicon single crystal, but typically has a diameter and a height of about 40 cm and has a flat bottom or a gently curved bottom. Such a crucible is mainly manufactured by a rotary mold arc melting method using quartz powder as a raw material, but the quartz crucible itself does not have a means for assisting the transportation because of the manufacturing method. However, as the silicon single crystal becomes larger, the crucible tends to have a larger diameter.
Quartz crucibles with a size of 4 inches and a weight of about 30 kg are manufactured. Due to the weight and size of the quartz crucible, carrying and mounting on a carbon crucible are problems. In other words, since the quartz crucible is a glass product, it is weak against impact, so it is difficult to mechanically grasp and transfer it. Moreover, since the conventional quartz crucible has no means such as a handle, it is suspended and transferred. In addition, since it is carried by workers only by workers, there is a problem of safety and pollution.

【0003】ちなみに、石英ルツボの側壁に透孔を穿設
したシリコン単結晶引上げ装置が特公平1−54318
号公報に記載されているが(図7参照)、この装置にお
ける石英ルツボの透孔11は単結晶シリコン引上げ時に
発生したSiO2 ガスを外部に放出させる目的のために
設けたもので、当然に石英ルツボ10を収容するカーボ
ンルツボ50にも前記透孔11に連通する透孔51が開
けられている。従ってこの透孔11を石英ルツボの吊上
げに利用しようとしても、透孔11と51は連通してい
るために、例えば、ルツボ内周面側から透孔11に吊上
げ用治具を差し込むと、その先端がカーボンルツボ50
の透孔51に突き出してカーボンルツボ50に係合する
ために石英ルツボ10をカーボンルツボ50から抜き出
すことができない。このように上記石英ルツボはルツボ
上部に孔を有するものであるが、この孔はガス放出を目
的としたものであり、しかもその構成はルツボの吊上げ
には利用できない。
Incidentally, a silicon single crystal pulling apparatus in which a through hole is formed in a side wall of a quartz crucible is disclosed in Japanese Patent Publication No. 1-54318.
Although it is described in Japanese Patent Publication (see FIG. 7), the through hole 11 of the quartz crucible in this apparatus is provided for the purpose of releasing the SiO 2 gas generated at the time of pulling the single crystal silicon to the outside. The carbon crucible 50 that houses the quartz crucible 10 also has a through hole 51 communicating with the through hole 11. Therefore, even if the through hole 11 is used for lifting the quartz crucible, since the through holes 11 and 51 communicate with each other, for example, when a lifting jig is inserted into the through hole 11 from the inner peripheral surface side of the crucible, Carbon crucible 50 at the tip
The quartz crucible 10 cannot be extracted from the carbon crucible 50 because it protrudes into the through hole 51 and engages with the carbon crucible 50. As described above, the quartz crucible has a hole in the upper part of the crucible, but this hole is for the purpose of releasing gas, and the structure cannot be used for lifting the crucible.

【0004】また特開昭53−88674号公報にも、
ルツボ上端に通孔を設けた単結晶引上げ装置が記載され
ているが、この通孔は溶融物をルツボの外側に溢れ出さ
せるためのものであり、従って、ルツボの上端には通孔
を囲む環状容器が一体に形成されており、吊上用係合孔
とは明らかに異なるものである。
Further, Japanese Patent Laid-Open No. 53-88674 also discloses that
Although a single crystal pulling device having a through hole at the upper end of the crucible is described, this through hole is for allowing the melt to overflow to the outside of the crucible, and therefore the upper end of the crucible surrounds the through hole. The annular container is integrally formed, and is clearly different from the lifting engagement hole.

【0005】以上のように、従来は、石英ルツボの移送
や引上げ装置への着脱を容易に行えるように、石英ルツ
ボに吊下げ用の係合手段を設けたものは知られていな
い。これは、従来の石英ルツボは比較的小型であるため
に人手による作業で足り、係合手段を設けて取扱いの機
械化を図る必要性に乏しかったこと、また製造工程の制
約から係合手段を設けるのが難しかい事情によるもと思
われる。
As described above, conventionally, there is no known quartz crucible provided with engaging means for hanging so that the quartz crucible can be easily transferred and detached from the pulling device. This is because the conventional quartz crucible has a relatively small size, and therefore it is sufficient to manually perform the work, and it is not necessary to provide the engaging means to mechanize the handling, and the engaging means is provided due to the limitation of the manufacturing process. It seems that the situation is difficult.

【0006】[0006]

【発明の解決課題】本発明は従来の石英ルツボにおける
上記課題を解決したものであり、石英ルツボ上部側壁に
吊下げ用係合手段の孔または凹凸部を設け、その移送お
よび引上げ装置への着脱を容易にした石英ルツボを提供
するものである。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems in a conventional quartz crucible, and a hole or an uneven portion for suspending engaging means is provided on the upper side wall of the quartz crucible, and the quartz crucible is transferred to and detached from a pulling device. It is intended to provide a quartz crucible that facilitates.

【0007】本発明によれば以下の構成からなるシリコ
ン単結晶引上げ用石英ルツボとその製造方法が提供され
る。 (1) カーボンルツボに内装され、シリコン単結晶の
引上げに使用される石英ルツボであって、側壁上部に吊
上用の係合手段が形成されていることを特徴とする石英
ルツボ。 (2) 係合手段がカーボンルツボから突出する石英ル
ツボ上端部分の側壁に貫通された孔である上記(1) の石
英ルツボ。 (3) 係合手段が貫通孔であり、石英ルツボに装入さ
れるシリコン融液の液面レベルより上方であって、該石
英ルツボがカーボンルツボに内装された状態で該貫通孔
が該カーボンルツボによって閉塞される位置に設けられ
ている上記(1) の石英ルツボ。 (4) 係合手段がシリコン融液の液面レベルより上方
の内周面に設けられた突起ないし凹部である上記(1) の
石英ルツボ。 (5) 係合手段がカーボンルツボより上側に位置する
石英ルツボ上端部分の外周面から側方に突き出た突起で
ある上記(1) の石英ルツボ。 (6) 係合手段が石英ルツボの回転軸に対して対称の
位置に設けられている上記(1) 〜(5) の何れかの石英ル
ツボ。 (7) 回転モールド法による石英ルツボの製造方法に
おいて、回転モールド側壁に成形治具を挿入する孔を設
け、この孔を貫通して回転モールド内周面に堆積した石
英粉体層に成形治具を挿入した状態とし、該石英粉体層
を加熱溶融してルツボの成形操作を行い、ルツボ成形後
に成形治具を引き抜くことにより、石英ルツボの側壁上
部に係合手段の孔ないし凹部を形成することを特徴とす
るシリコン単結晶引上げ用石英ルツボの製造方法。
According to the present invention, there is provided a quartz crucible for pulling a silicon single crystal having the following structure and a method for manufacturing the same. (1) A quartz crucible, which is incorporated in a carbon crucible and is used for pulling a silicon single crystal, characterized in that an engaging means for lifting is formed on an upper portion of a side wall. (2) The quartz crucible according to the above (1), wherein the engaging means is a hole penetrating the side wall of the upper end of the quartz crucible protruding from the carbon crucible. (3) The engaging means is a through-hole, which is above the liquid level of the silicon melt charged in the quartz crucible, and the through-hole is formed in the carbon crucible with the through-hole being inside the carbon crucible. The quartz crucible according to (1) above, which is provided at a position where it is closed by the crucible. (4) The quartz crucible according to (1) above, wherein the engaging means is a protrusion or a recess provided on the inner peripheral surface above the liquid level of the silicon melt. (5) The quartz crucible according to the above (1), wherein the engaging means is a protrusion protruding laterally from the outer peripheral surface of the upper end portion of the quartz crucible located above the carbon crucible. (6) The quartz crucible according to any one of the above (1) to (5), wherein the engaging means is provided at a position symmetrical with respect to the rotation axis of the quartz crucible. (7) In the method of manufacturing a quartz crucible by the rotary molding method, a hole for inserting a molding jig is provided in the side wall of the rotary mold, and the molding jig is formed on the quartz powder layer deposited on the inner peripheral surface of the rotary mold through the hole. With the inserted state, the quartz powder layer is heated and melted to perform the crucible forming operation, and the forming jig is pulled out after the crucible forming to form the hole or recess of the engaging means in the upper side wall of the quartz crucible. A method of manufacturing a quartz crucible for pulling a silicon single crystal, comprising:

【0008】[0008]

【具体的説明】以下、本発明を図面に示す実施例を参照
して詳細に説明する。図1(A)(B)は石英ルツボの上部側
壁に係合孔を設けた例を示す外観図であり、図2(A)(B)
はその吊上げ状態を示す断面図、図3は係合手段として
突起を設けた例を示す外観図、図4は係合手段として凹
部を形成した例、図5(A)(B)(C) は吊上げ治具の外観
図、図6は製造方法の説明図である。
DETAILED DESCRIPTION OF THE INVENTION The present invention will be described in detail below with reference to the embodiments shown in the drawings. FIGS. 1 (A) and 1 (B) are external views showing an example in which an engagement hole is provided in an upper side wall of a quartz crucible, and FIGS.
5 is a cross-sectional view showing the lifting state, FIG. 3 is an external view showing an example in which a protrusion is provided as engaging means, FIG. 4 is an example in which a recess is formed as engaging means, and FIGS. 5 (A) (B) (C) Is an external view of the lifting jig, and FIG. 6 is an explanatory diagram of the manufacturing method.

【0009】本発明の石英ルツボはシリコン単結晶引上
げに用いられるものである。シリコン単結晶の引上げに
おいて、原料の多結晶シリコンは不純物が混入しないよ
うに高純度の石英によって製造した石英ルツボに装入し
た状態で加熱溶融される。この引上装置には、石英ルツ
ボを伝熱性良く保持するためにカーボンルツボが設けら
れており、さらに該カーボンルツボを回転しながら上下
動する機構と、該カーボンルツボを囲む加熱手段が設け
られている。石英ルツボはカーボンルツボに嵌着され、
該カーボンルツボと一体に回転されながら徐々に下降さ
れることによりシリコン融液から単結晶シリコンが引き
上げられる。
The quartz crucible of the present invention is used for pulling a silicon single crystal. In pulling a silicon single crystal, polycrystalline silicon as a raw material is heated and melted in a state of being charged in a quartz crucible made of high-purity quartz so that impurities are not mixed. This pulling apparatus is provided with a carbon crucible for holding the quartz crucible with good heat conductivity, and further provided with a mechanism for moving the carbon crucible up and down while rotating, and a heating means surrounding the carbon crucible. There is. The quartz crucible is fitted to the carbon crucible,
The single crystal silicon is pulled up from the silicon melt by being gradually lowered while being rotated integrally with the carbon crucible.

【0010】このように、石英ルツボはその外周から均
一に加熱されるようにカーボンルツボの内周面に密着し
て嵌合される。このカーボンルツボへの着脱および持運
びを容易に行えるように、本発明の石英ルツボは、その
側壁上部に吊上用の係合手段が設けられている。上記係
合手段としては、ルツボ側壁に貫通された係合孔あるい
は係合用凹部ないし突起が形成される。
As described above, the quartz crucible is fitted in close contact with the inner peripheral surface of the carbon crucible so as to be uniformly heated from the outer periphery thereof. The quartz crucible of the present invention is provided with an engaging means for lifting on the upper side wall thereof so that the quartz crucible can be easily attached to and detached from the carbon crucible and can be easily carried. As the above-mentioned engaging means, an engaging hole or an engaging recess or projection which is penetrated through the side wall of the crucible is formed.

【0011】ルツボ側壁上部に穿設された係合手段とし
ての貫通孔は、吊上用の係合治具が該貫通孔に挿入され
たときに、石英ルツボが内装されているカーボンルツボ
に該治具が係合しない位置に設けられる。具体的には図
1および図2に示すように、石英ルツボ10の上端11
をカーボンルツボ20から突き出す高さとし、このカー
ボンルツボから突き出す上端部分11に貫通孔12を設
ける。このように、カーボンルツボ20から突き出す石
英ルツボ上端11に貫通孔12を設ければ、図2(A) に
示すように、該貫通孔12に吊上用の治具30を係合す
る際に、カーボンルツボ20に妨げられずに治具30を
石英ルツボ10の外周側から挿入することができるの
で、貫通孔12の位置確認が容易であり、しかも治具3
0の先端が貫通孔12から突出してもカーボンルツボ2
0と接触しないので、治具30と貫通孔12の係合作業
が容易であり、石英ルツボ10のカーボンルツボ20へ
の着脱を迅速に行うことができる。
The through hole as the engaging means formed in the upper part of the side wall of the crucible is provided in the carbon crucible in which the quartz crucible is installed when the engaging jig for lifting is inserted into the through hole. It is provided at a position where the jig does not engage. Specifically, as shown in FIGS. 1 and 2, the upper end 11 of the quartz crucible 10 is
Is a height protruding from the carbon crucible 20, and a through hole 12 is provided in an upper end portion 11 protruding from the carbon crucible. Thus, if the through hole 12 is provided in the upper end 11 of the quartz crucible protruding from the carbon crucible 20, as shown in FIG. 2A, when the jig 30 for lifting is engaged with the through hole 12. Since the jig 30 can be inserted from the outer peripheral side of the quartz crucible 10 without being obstructed by the carbon crucible 20, the position of the through hole 12 can be easily confirmed, and the jig 3
Even if the tip of 0 protrudes from the through hole 12, the carbon crucible 2
Since it does not come into contact with 0, the jig 30 and the through hole 12 can be easily engaged with each other, and the quartz crucible 10 can be quickly attached to and detached from the carbon crucible 20.

【0012】また係合用貫通孔12は、図2(B) に示す
ように、石英ルツボ10に装入されるシリコン融液60
の液面レベルより上方であって、該石英ルツボ10がカ
ーボンルツボ20に内装された状態で該貫通孔12が該
カーボンルツボによって閉塞される位置、即ち、カーボ
ンルツボ20に設けられたガス抜き用の孔などに係合し
ない位置に係合用貫通孔12を設けても良い。この場合
には吊上用の係合治具30はルツボの内周面側から貫通
孔12に挿入される。石英ルツボ10がカーボンルツボ
20に内装された状態で、該孔12はカーボンルツボ内
周面によって閉塞されているので、治具30が孔12に
押し込まれた際に、その先端がカーボンルツボ20に突
出して係合することがなく、石英ルツボ10をカーボン
ルツボ20から容易に引き抜くことができる。また治具
30の先端が石英ルツボ側壁から突出さないように治具
30を貫通孔12に挿入した状態で石英ルツボ10を吊
下げれば、係合治具10の先端がカーボンルツボ20に
衝突せずに石英ルツボ10を該カーボンルツボ20に装
着することができる。
Further, the engaging through hole 12 is provided with a silicon melt 60 which is charged into the quartz crucible 10 as shown in FIG. 2 (B).
Above the liquid surface level, and at a position where the through hole 12 is closed by the carbon crucible 20 in a state where the quartz crucible 10 is installed in the carbon crucible 20, that is, for degassing provided in the carbon crucible 20. The engaging through hole 12 may be provided at a position where the engaging through hole 12 is not engaged. In this case, the lifting jig 30 is inserted into the through hole 12 from the inner peripheral surface side of the crucible. Since the hole 12 is closed by the inner peripheral surface of the carbon crucible in the state where the quartz crucible 10 is housed in the carbon crucible 20, when the jig 30 is pushed into the hole 12, the tip of the quartz crucible 10 is inserted into the carbon crucible 20. The quartz crucible 10 can be easily pulled out from the carbon crucible 20 without protruding and engaging. If the quartz crucible 10 is suspended with the jig 30 inserted into the through hole 12 so that the tip of the jig 30 does not protrude from the side wall of the quartz crucible, the tip of the engaging jig 10 collides with the carbon crucible 20. Instead, the quartz crucible 10 can be attached to the carbon crucible 20.

【0013】係合手段の他の形状としては、図3に示す
ように突起13でも良く、または図4に示すように、十
分な係合深さが確保できれば凹部14でも良い。係合用
突起13は、石英ルツボ10をカーボンルツボ20に着
脱する際に、その妨げにならないよう、石英ルツボ10
のカーボンルツボ20から突出す上端部外周に設けられ
る。図3はカーボンルツボ20から突き出す石英ルツボ
上端部11の外周に係合用突起13を設けた例である。
また係合用凹部14は、図4に示すように、石英ルツボ
10の内周面に設ける場合にはシリコン融液の液面レベ
ルよりも上方に形成され、また石英ルツボ10の外周面
に設ける場合にはカーボンルツボから突出した上端部分
に形成される。
The other shape of the engaging means may be the projection 13 as shown in FIG. 3 or the concave portion 14 as shown in FIG. 4 if a sufficient engaging depth can be secured. The engagement projection 13 does not obstruct the attachment and detachment of the quartz crucible 10 to and from the carbon crucible 20, so that the quartz crucible 10 can be prevented.
Is provided on the outer circumference of the upper end portion protruding from the carbon crucible 20. FIG. 3 shows an example in which the engagement projection 13 is provided on the outer periphery of the quartz crucible upper end 11 protruding from the carbon crucible 20.
Further, as shown in FIG. 4, when the engaging recess 14 is provided on the inner peripheral surface of the quartz crucible 10, it is formed above the liquid level of the silicon melt, and on the outer peripheral surface of the quartz crucible 10. Is formed on the upper end portion protruding from the carbon crucible.

【0014】係合用の上記貫通孔12、突起13および
凹部14は何れも石英ルツボ10を安定に吊上げること
ができるように、石英ルツボの回転中心に対して対称に
設けるのが好ましい。図1(A) は貫通孔12を左右対称
に設けた例であり、図1(B)は該孔12を石英ルツボの
回転中心に対して120度の間隔で3か所に設けた例で
ある。必要に応じ、該係合手段を4か所以上に設けても
良い。また、これら貫通孔12、突起13および凹部1
4の形状はとくに限定されず、円、矩形、半月形、楕円
形など適宜な形状で良いが、係合用治具30に適合する
形状であることが好ましい。
It is preferable that all of the through holes 12, the projections 13, and the recesses 14 for engagement are provided symmetrically with respect to the rotation center of the quartz crucible so that the quartz crucible 10 can be stably lifted. FIG. 1 (A) is an example in which the through holes 12 are provided symmetrically, and FIG. 1 (B) is an example in which the holes 12 are provided at three positions at 120 ° intervals with respect to the center of rotation of the quartz crucible. is there. If necessary, the engaging means may be provided at four or more places. Also, these through holes 12, protrusions 13, and recesses 1
The shape of 4 is not particularly limited, and may be an appropriate shape such as a circle, a rectangle, a half moon shape, and an ellipse, but a shape suitable for the engaging jig 30 is preferable.

【0015】一例として、係合治具30の先端31を僅
かに上方に張り出す形状とし、この先端形状よりやや大
きな貫通孔12を設ければ、係合治具30を石英ルツボ
10の外周側から貫通孔12に挿入して吊上げた時に、
治具先端31が石英ルツボ10の内周面に張り出して貫
通孔12に係合するので、治具30が貫通孔12から外
れる虞がない。
As an example, if the tip 31 of the engaging jig 30 is formed to project slightly upward and a through hole 12 slightly larger than this tip shape is provided, the engaging jig 30 is provided on the outer peripheral side of the quartz crucible 10. When inserted into the through hole 12 from the
Since the jig tip 31 projects to the inner peripheral surface of the quartz crucible 10 and engages with the through hole 12, there is no risk of the jig 30 coming off the through hole 12.

【0016】吊上げ用係合治具30の具体例を図5(A)
(B)(C) に示す。図5(A) の例は、吊具35の下端に三
又の係合爪32を設けたものであり、各爪32はフリジ
ョイント33を介してぶら下げられているので、各爪3
3を押し広げてその先端31が石英ルツボ10の貫通孔
12または凹部14に挿入される。また図5(B) は円板
状の吊具35から係合爪32を垂下させた例である。該
係合爪32は等間隔に3本設けられ、かつ側方に向かっ
て往復動自在に装着されている。該係合爪32は内側に
向かって移動され、その先端が石英ルツボ10の貫通孔
12または凹部14に係合され、また係合位置から外側
に向かって移動して貫通孔12ないし凹部14から外れ
る。図5(C) は水平に吊下げられた環状の吊具35に係
合棒34を着脱自在に装着した例であり、3本の係合棒
34が等間隔に中心に向かって挿着されている。吊具3
5が石英ルツボ10の上端を囲む位置に挿入されるまで
係合棒34は予め引き出されており、その後、係合棒3
4が内側に差し込まれ、その先端が貫通孔12または凹
部14に係合される。これらの吊具35は、好ましくは
ホイストや走行台車によって搬送自在に支持されてお
り、係合爪32が石英ルツボ10の貫通孔12または凹
部14に係合した状態で該石英ルツボを吊上げ、目的の
地点に移送する。なお、係合用突起13を設けた例につ
いても同様の吊上搬送手段を用いることができる。
A concrete example of the lifting jig 30 is shown in FIG.
Shown in (B) and (C). In the example shown in FIG. 5 (A), a three-pronged engaging claw 32 is provided at the lower end of the lifting tool 35. Since each claw 32 is hung from a free joint 33, each claw 3
3 is expanded and the tip 31 is inserted into the through hole 12 or the recess 14 of the quartz crucible 10. Further, FIG. 5B is an example in which the engaging claw 32 is hung from a disk-shaped suspending tool 35. Three engaging claws 32 are provided at equal intervals and are mounted so as to be reciprocally movable laterally. The engaging claw 32 is moved inward, its tip is engaged with the through hole 12 or the concave portion 14 of the quartz crucible 10, and is moved outward from the engaging position to move through the through hole 12 or the concave portion 14. Come off. FIG. 5 (C) shows an example in which the engaging rods 34 are detachably attached to an annular hanging tool 35 that is suspended horizontally, and three engaging rods 34 are inserted at equal intervals toward the center. ing. Hanging equipment 3
The engaging rod 34 is pulled out in advance until the engaging rod 5 is inserted into a position surrounding the upper end of the quartz crucible 10, and then the engaging rod 3 is inserted.
4 is inserted inward, and its tip is engaged with the through hole 12 or the recess 14. These hoists 35 are preferably supported by a hoist or a traveling carriage so that they can be conveyed, and the quartz crucible is hoisted while the engaging claw 32 is engaged with the through hole 12 or the recess 14 of the quartz crucible 10. Transfer to the point. The same hoisting and conveying means can be used for the example in which the engagement projection 13 is provided.

【0017】次に、上記係合用貫通孔12または凹部1
4の形成方法の一例を図6に示す。図示する方法は回転
モールドによって石英ルツボ10を製造する際に同時に
上記貫通孔等を形成する方法であり、回転モールド40
の上端に棒状の成形治具(成形棒)42を挿入する成形
用の孔41を設け、この孔41に成形棒42を挿入して
その先端を回転モールド40の内側に突出させ、この状
態で石英粉体を回転モールド内周面に堆積させて石英粉
体層43に成形棒42の先端が挿入された状態とする。
該石英粉体層43をアーク放電などにより加熱してその
内周側から溶融しガラス化する。また必要に応じ、加熱
時に回転モールドに設けた吸引路44を通じて石英粉体
層内部を排気する。ルツボ成形後に成形棒42を引き抜
くことにより石英ルツボの上端に貫通孔12が形成され
る。なお成形棒42の突出長さをやや短くし石英粉体層
43から突出さないようにすれば、係合用凹部を形成す
ることができる。
Next, the engaging through hole 12 or the recess 1 is formed.
FIG. 6 shows an example of a method of forming No. 4 of FIG. The illustrated method is a method of simultaneously forming the through holes and the like when the quartz crucible 10 is manufactured by the rotary mold.
A molding hole 41 into which a rod-shaped molding jig (molding rod) 42 is inserted is provided at the upper end of the, and the molding rod 42 is inserted into this hole 41 so that the tip of the molding rod 42 projects into the rotary mold 40. Quartz powder is deposited on the inner peripheral surface of the rotary mold so that the tip of the molding rod 42 is inserted into the quartz powder layer 43.
The quartz powder layer 43 is heated by arc discharge or the like to melt and vitrify from its inner peripheral side. If necessary, the inside of the quartz powder layer is exhausted through the suction passage 44 provided in the rotary mold during heating. After forming the crucible, the forming rod 42 is pulled out to form the through hole 12 at the upper end of the quartz crucible. It should be noted that if the protruding length of the molding rod 42 is made slightly shorter so as not to project from the quartz powder layer 43, the engaging recess can be formed.

【0018】なお、上記貫通孔12および凹部14は、
上記方法によらず、ルツボ成形後にコアドリルまたはレ
ーザー光線などで穿設することができるが、回転モール
ド法による上記方法では、成形後に穿孔加工する必要が
なく、加工時の損傷を避けることができる。また係合手
段の突起を形成する場合には、予め高純度の石英部材に
よって突起を形成ておき、これを石英ルツボに溶着させ
ればよい。
The through hole 12 and the recess 14 are
Although the crucible molding can be performed by a core drill or a laser beam without using the above method, the rotational molding method described above does not require punching after the molding, and damage during processing can be avoided. Further, when forming the protrusion of the engaging means, the protrusion may be formed in advance by a high-purity quartz member, and this may be welded to the quartz crucible.

【0019】なお必要に応じ、上記係合用の貫通孔ない
し凹部に、石英ルツボに関する情報を表示する機能を兼
用させてもよい。例えば石英ルツボの等級(不純物含有
量)に応じて貫通孔や凹部の配置や形状を変え、吊具の
係合治具をこれと対応する形状にすれば、石英ルツボの
吊上げ機能と共に等級識別機能をも発揮することができ
る。
If necessary, the engaging through hole or recess may also have a function of displaying information regarding the quartz crucible. For example, if the arrangement and shape of the through holes and recesses are changed according to the grade (impurity content) of the quartz crucible and the engaging jig of the hanger is shaped to correspond to this, the quartz crucible lifting function as well as the grade identification function Can also be demonstrated.

【0020】[0020]

【発明の効果】本発明の石英ルツボは、吊上用の係合手
段を有するので石英ルツボを機械的手段によって安全、
確実に搬送することができる。また単結晶引上装置への
着脱も容易に行うことができる。さらに、石英ルツボを
機械的手段に搬送できるので、人手による作業の省力化
および石英ルツボの汚染を防止することができる。また
本発明の石英ルツボは、カーボンルツボとの装着部分に
は突起などの障害物が形成されないので、カーボンルツ
ボとの密着性が損なわれず、熱伝導率を均一かつ効率的
に維持することができ、従って均一な品質で純度の高い
単結晶シリコンを引上げることができる。
Since the quartz crucible of the present invention has the engaging means for lifting, the quartz crucible can be safely secured by mechanical means,
It can be reliably transported. Further, it can be easily attached to and detached from the single crystal pulling apparatus. Further, since the quartz crucible can be conveyed to a mechanical means, labor saving of manual work and contamination of the quartz crucible can be prevented. Further, in the quartz crucible of the present invention, since no obstacles such as protrusions are formed in the mounting portion with the carbon crucible, the adhesion with the carbon crucible is not impaired, and the thermal conductivity can be uniformly and efficiently maintained. Therefore, it is possible to pull up single crystal silicon having uniform quality and high purity.

【図面の簡単な説明】[Brief description of drawings]

【図1】(A)(B) 上部側壁に係合孔を設けた石英
ルツボの外観図。
1A and 1B are external views of a quartz crucible having an engagement hole in an upper side wall.

【図2】(A)(B) 石英ルツボの吊上げ状態を示す
断面図。
2A and 2B are cross-sectional views showing a suspended state of a quartz crucible.

【図3】 係合手段の突起を設けた石英ルツボの外観
図。
FIG. 3 is an external view of a quartz crucible provided with a protrusion of engaging means.

【図4】 係合手段の凹部を形成した石英ルツボの概略
断面図。
FIG. 4 is a schematic cross-sectional view of a quartz crucible in which a recess of engaging means is formed.

【図5】(A)(B)(C) 吊上げ治具の外観図。5 (A), (B), and (C) are external views of a lifting jig.

【図6】 本発明に係る石英ルツボの製造方法の説明
図。
FIG. 6 is an explanatory view of a method for manufacturing a quartz crucible according to the present invention.

【図7】 従来のシリコン単結晶引上げ装置の概略断面
図。
FIG. 7 is a schematic sectional view of a conventional silicon single crystal pulling apparatus.

【符号の説明】[Explanation of symbols]

10−石英ルツボ、11−石英ルツボ上端、12−貫通
孔、13−突起、14−凹部、20−カーボンルツボ、
30−係合用治具、32−係合爪、34−係合棒、35
−吊具、40−回転モールド、41−孔、42−成形
棒、43−石英粉体層。
10-quartz crucible, 11-upper end of quartz crucible, 12-through hole, 13-protrusion, 14-recess, 20-carbon crucible,
30-engagement jig, 32-engagement claw, 34-engagement rod, 35
-Hanging tool, 40-Rotating mold, 41-Hole, 42-Molding rod, 43-Quartz powder layer.

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 カーボンルツボに内装され、シリコン単
結晶の引上げに使用される石英ルツボであって、側壁上
部に吊上用の係合手段が形成されていることを特徴とす
る石英ルツボ。
1. A quartz crucible, which is incorporated in a carbon crucible and is used for pulling a silicon single crystal, wherein a suspending engagement means is formed on an upper portion of a side wall of the quartz crucible.
【請求項2】 係合手段がカーボンルツボから突出する
石英ルツボ上端部分の側壁に貫通された孔である請求項
1の石英ルツボ。
2. The quartz crucible according to claim 1, wherein the engaging means is a hole penetrating the side wall of the upper end portion of the quartz crucible protruding from the carbon crucible.
【請求項3】 係合手段が貫通孔であり、石英ルツボに
装入されるシリコン融液の液面レベルより上方であっ
て、該石英ルツボがカーボンルツボに内装された状態で
該貫通孔が該カーボンルツボによって閉塞される位置に
設けられている請求項1の石英ルツボ。
3. The engaging means is a through-hole, which is above the liquid level of the silicon melt charged in the quartz crucible, and the through-hole is provided in a state in which the quartz crucible is contained in the carbon crucible. The quartz crucible according to claim 1, wherein the quartz crucible is provided at a position closed by the carbon crucible.
【請求項4】 係合手段がシリコン融液の液面レベルよ
り上方の内周面に設けられた突起ないし凹部である請求
項1の石英ルツボ。
4. The quartz crucible according to claim 1, wherein the engaging means is a protrusion or a recess provided on the inner peripheral surface above the liquid level of the silicon melt.
【請求項5】 係合手段がカーボンルツボより上側に位
置する石英ルツボ上端部分の外周面から側方に突き出た
突起である請求項1の石英ルツボ。
5. The quartz crucible according to claim 1, wherein the engaging means is a protrusion protruding laterally from an outer peripheral surface of an upper end portion of the quartz crucible located above the carbon crucible.
【請求項6】 係合手段が石英ルツボの回転軸に対して
対称の位置に設けられている請求項1〜5の何れかの石
英ルツボ。
6. The quartz crucible according to claim 1, wherein the engaging means is provided at a position symmetrical with respect to the rotation axis of the quartz crucible.
【請求項7】 回転モールド法による石英ルツボの製造
方法において、回転モールド側壁に成形治具を挿入する
孔を設け、この孔を貫通して回転モールド内周面に堆積
した石英粉体層に成形治具を挿入した状態とし、該石英
粉体層を加熱溶融してルツボの成形操作を行い、ルツボ
成形後に成形治具を引き抜くことにより、石英ルツボの
側壁上部に係合手段の孔ないし凹部を形成することを特
徴とするシリコン単結晶引上げ用石英ルツボの製造方
法。
7. A method of manufacturing a quartz crucible by a rotary molding method, wherein a hole for inserting a molding jig is provided in a side wall of the rotary mold, and a quartz powder layer deposited on the inner peripheral surface of the rotary mold through the hole is molded. With the jig inserted, the quartz powder layer is heated and melted to form the crucible, and the molding jig is pulled out after the crucible is formed. A method for manufacturing a quartz crucible for pulling a silicon single crystal, which comprises forming the quartz crucible.
JP28398393A 1992-12-26 1993-10-18 Quartz crucible for pulling silicon single crystal and its manufacturing method Expired - Lifetime JP3278786B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28398393A JP3278786B2 (en) 1992-12-26 1993-10-18 Quartz crucible for pulling silicon single crystal and its manufacturing method

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9286492 1992-12-26
JP4-92864 1992-12-26
JP28398393A JP3278786B2 (en) 1992-12-26 1993-10-18 Quartz crucible for pulling silicon single crystal and its manufacturing method

Publications (2)

Publication Number Publication Date
JPH06239632A true JPH06239632A (en) 1994-08-30
JP3278786B2 JP3278786B2 (en) 2002-04-30

Family

ID=26434245

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3278786B2 (en)

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US9637411B2 (en) 2010-12-29 2017-05-02 Sumco Corporation Vitreous silica crucible and method of manufacturing the same
CN116674061A (en) * 2023-07-21 2023-09-01 东海县太阳光新能源有限公司 Automatic production equipment suitable for ceramic crucible and production method thereof
CN116674061B (en) * 2023-07-21 2024-04-30 东海县太阳光新能源有限公司 Automatic production equipment suitable for ceramic crucible and production method thereof

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