JPH06236799A - Plasma treatment device - Google Patents

Abstract

PURPOSE:To uniformly emit a plasma to a material to be treated having a large treatment surface area. CONSTITUTION:A slender window part 18b is provided on the side wall part of a plasma chamber 18, and a material 20 to be treated is arranged on the inside of the window part 18b. On the E-face 16a of a square waveguide 16, a slit 16b extending in the axial direction is formed. In the state where the longitudinal direction of the slit 16b is coincident to the longitudinal direction of the window part 18b, the square waveguide 16 is mounted on the plasma chamber 18 to connect the slit 16b to the window part 18b. One metal plate opposite to the E-face of the square waveguide 16 in the state inclined along the longitudinal direction of the Slit 16b is arranged in the square waveguide 16. The connecting part between the slit 16b of the square waveguide and the window part 18b of the plasma chamber is vacuum sealed by a quartz glass plate 19.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is directed to CVD, ashing and etching by irradiating an object to be processed with plasma generated by supplying microwave power into a plasma chamber containing a process gas at a predetermined pressure. The present invention relates to a plasma processing apparatus that performs processing such as.

[0002]

2. Description of the Related Art In recent years, a technique for forming a diamond film as a protective film on a machine tool or a magnetic film has become widespread. In order to form this protective film uniformly at a low temperature at a high speed. Plasma is used for. Plasma is also used when etching is performed in the manufacturing process of LSIs and liquid crystal displays. FIG. 12 shows a conventional plasma processing apparatus used for plasma CVD, ashing, etching, etc. This apparatus includes a microwave power source 1, an isolator 2, a directional coupler 3, an impedance matching unit 4, The corner waveguide 5, the rectangular waveguides 6 and 7, the terminating device 8 having the movable short-circuit plate 8a, and the quartz tube 9 penetrating the rectangular waveguide 7 are provided. A vacuum pump (not shown) is connected to the quartz tube 9, and after the inside of the quartz tube 9 is brought to a high vacuum state by the vacuum pump, the process gas G is supplied to the quartz tube 9 up to a predetermined pressure.

The microwave generated from the microwave power source 1 is supplied into the rectangular waveguide 7 through the isolator 2, the directional coupler 3, the impedance matching device 4 and the like. The microwave supplied into the rectangular waveguide 7 propagates through the tube wall of the quartz tube 9 into the plasma chamber inside, and the process gas in the quartz tube 9 is turned into plasma. The object to be processed is arranged in the central part of the waveguide 7 in the quartz tube 9 or on the downstream side of the plasma, and is irradiated with the plasma. A plasma generator using electron cyclotron resonance is also used.
In this plasma generator, a microwave is supplied to the plasma chamber through a rectangular waveguide, an air-core coil is arranged so as to surround the plasma chamber, and a magnetic field and a microwave generated by exciting the air-core coil are generated. Generate electron cyclotron resonance (ECR) to generate a high density plasma under high vacuum conditions.

[0004]

In recent years, thin film formation,
In order to improve the processing efficiency of plasma processing such as etching, a large area object is uniformly irradiated with plasma,
A technique for performing uniform processing at high speed at low temperature has been required. In addition, in a liquid crystal display manufactured in the same process as that of an LSI, a technology for uniformly irradiating plasma on a large-area processed surface has been required along with the increase in diameter.

However, in the conventional plasma processing apparatus,
Since there is a difference in the plasma density between the central part and the peripheral part of the generated plasma, it is not possible to make the film formation rate and etching rate uniform in each part of the object to be processed, and products with good quality can be efficiently produced It was difficult to manufacture. Further, since the plasma has a circular cross section, the treatment cannot be efficiently performed when the surface to be processed of the object has a rectangular or square shape.

Although it is conceivable to increase the diameter of the quartz tube 7 in order to generate a large diameter plasma in the plasma processing apparatus shown in the figure, the diameter of the quartz tube 7 is limited by the size of the waveguide. Therefore, it is not possible to increase the diameter of the quartz tube to the extent that it can cope with the increase in the size of the object to be treated.
Further, in a plasma generator using ECR, if an attempt is made to increase the diameter of plasma, the air-core coil becomes very large, and the device becomes huge, which is not practical.

An object of the present invention is to provide a plasma processing apparatus capable of uniformly irradiating plasma onto the entire processing surface having a large area without increasing the size of the apparatus.

[0008]

In the present invention, in order to achieve the above object, a plasma chamber having an elongated window portion in a side wall portion and an object to be treated is disposed inside the window portion, and a tube. A rectangular waveguide for plasma chamber coupling, which has a slit extending in the axial direction on the E-plane, is arranged in a state where the tube axial direction coincides with the longitudinal direction of the window of the plasma chamber, and the slit is coupled to the window. , The longitudinal direction of the slit arranged in the rectangular waveguide so that the microwave supplied from one end of the rectangular waveguide makes the electric power of the microwave passing through the slit substantially uniform along the longitudinal direction of the slit. One metal plate that is arranged to face the E surface of the rectangular waveguide in a state of being inclined along the direction, and a microwave power source that supplies microwaves to the rectangular waveguide are provided. The joint between the slit and the window of the plasma chamber is It was to be vacuum sealed with materials that do not absorb.

In order to increase the density of the plasma applied to the object to be processed, it is preferable to provide magnetic field generating means for generating a magnetic field in the space between the object to be processed and the window in addition to the above structure. .

[0010]

With the above structure, when a microwave is supplied from the microwave power source into the rectangular waveguide for plasma chamber coupling through a predetermined transmission circuit, the microwave propagates through the slit and the window into the plasma chamber. . Therefore, when the process gas is introduced into the plasma chamber so that the plasma chamber has an appropriate pressure, plasma is generated in the plasma chamber. Since this plasma is generated in a band shape along the window of the plasma chamber, it is possible to irradiate the object to be processed having a large surface area with the plasma.

In the above structure, if the cross-sectional area of the microwave propagation space in the rectangular waveguide for plasma chamber coupling is made uniform along the tube axis direction, the microwave propagates in the rectangular waveguide in the tube axis direction. As the number of microwaves propagates into the plasma chamber through the slit and the window, the density of plasma tends to decrease from one end of the window toward the other end. Therefore, one metal plate facing the E surface of the rectangular waveguide in a state of being inclined along the longitudinal direction of the slit is arranged in the rectangular waveguide, and the inclination angle of the one metal plate with respect to the slit is appropriately adjusted. When adjusted, the electric power of the microwave passing through the slit can be made substantially uniform along the longitudinal direction of the slit, and the plasma density can be made substantially uniform along the longitudinal direction of the window.

In particular, when the magnetic field generating means for generating a magnetic field is provided in the space between the object to be processed and the window portion, the plasma density in the vicinity of the object to be processed can be increased. In this case, the plasma density can be dramatically increased by setting the magnetic field strength so that electron cyclotron resonance occurs. Further, by providing a divergent magnetic field generating means for forming a divergent magnetic field so that the magnetic field is directed to the plasma chamber at the central portion in the width direction of the window of the plasma chamber, the plasma can be further guided to the object to be processed.

[0013]

1 to 4 show an embodiment of the present invention. In FIG. 1, reference numeral 11 denotes a microwave power source, and an output end of the microwave power source 11 is a rectangular waveguide for plasma chamber coupling via an isolator 12, a directional coupler 13, an automatic impedance matching device 14 and a corner rectangular waveguide 15. A dummy load 17 that is connected to one end of the wave tube 16 and that absorbs excess microwave energy is connected to the other end of the coupling rectangular waveguide 16. The dummy load 17 has an inlet 17a for cooling water and an outlet 17b for cooling water.
Microwave energy is absorbed in the cooling water introduced from a, and the cooling water heated by the microwave is discharged from the outlet 17b.
It is designed to be discharged from.

Reference numeral 18 denotes a cubic or rectangular parallelepiped plasma chamber having an airtight structure. As shown in FIG. 3, this plasma chamber has one side wall 18a on one E surface 16a of the rectangular waveguide 16. It is placed in a state of being put together. A side wall 18a of the plasma chamber 18 is provided with an elongated rectangular window portion 18b extending along the tube axis direction of the waveguide 16.
The window portion 18b is vacuum-sealed by a quartz glass plate 19 attached so as to be flush with the outer surface of the side wall 18a of the plasma chamber. An exhaust port 18c is provided in the plasma chamber 18, and this exhaust port is connected to a vacuum pump (not shown), and a process gas introduction pipe 41 is attached so as to hermetically penetrate one wall of the plasma chamber 18. There is. In the plasma chamber 18, a roller 21 around which a sheet-shaped object to be processed 20 is wound and a take-up roller 22 that winds up the processed object to be processed are arranged to face each other.
An object to be processed 20 extending between 1 and 22 is arranged to face the window portion 18b. The workpiece 20 has a width dimension substantially equal to the length of the window portion 18b of the plasma chamber. Also,
In the plasma chamber 18, a window portion 18 is provided through an object 20 to be processed.
The magnetic field generating means 23 is arranged to face b. The magnetic field generating means 23 includes a permanent magnet 24 and the permanent magnet 24.
A pair of U-shaped magnetic pole pieces 25 and 26, one end of which is connected to the magnetic poles of both ends of the magnetic pole pieces 25 and 26, and the magnetic pole portions 25a and 26a at the other ends of the magnetic pole pieces 25 and 26 are processed at positions corresponding to the window portion 18b. It is arranged so as to face in parallel with the object 20. Therefore, lines of magnetic force are generated from the magnetic pole portions 25a and 26a as indicated by broken line arrows, and a magnetic field is generated in the space between the workpiece 20 and the window portion 18b. In order to generate this magnetic field almost uniformly along the longitudinal direction of the window portion 18b, the magnetic field generating means 23 uses the window portion 1b.
8b has a length substantially the same as the length of 8b, or the window portion 18
It is desirable to have a length slightly longer than b. Further, a plurality of magnetic field generating means 23 may be arranged along the longitudinal direction of the window portion 18b to generate a substantially uniform magnetic field along the longitudinal direction of the window portion 18b.

The coupling rectangular waveguide 16 has an E surface 16a.
A slit 16b extending in the tube axis direction of the waveguide is provided at the center in the width direction of the waveguide. The slit 16b has a length substantially equal to that of the window portion 18b of the plasma chamber, but the width dimension thereof is set smaller than the width dimension of the window portion 18b. The coupling rectangular waveguide 16 has its E surface 16a in contact with the side wall 18a of the plasma chamber and has the slit 16b along the center of the window 18b of the plasma chamber (slit 16b). Is aligned with the window portion 18b) and is fixed to the plasma chamber 18 by an appropriate means. In the coupling rectangular waveguide 16, as shown in FIG. 2, one strip-shaped metal plate 27 facing the E surface 16a in a state of being inclined along the longitudinal direction of the slit 16b is arranged. ing. The metal plate 27 has a slit 16
It is made of a conductive metal plate that is longer than b and has a width narrower than the E surface of the waveguide 16. As shown in FIG. 4, the metal plate 27 is arranged with its back surface abutted on a strip plate-shaped support plate 28 having substantially the same dimensions as the metal plate 27. Are integrated by appropriate means. The support plate 28 is made of a conductive material, and semicircular arc-shaped flexible conductors 28a, 28a made of an elastic material are provided at both ends in the width direction of the support plate 28. In addition,
The flexible conductors 28a and 28a may be integrally provided on the support plate 28, or may be joined to the support plate by welding or the like. A pair of support fittings 29, 29 are fixed to the surface (the surface opposite to the metal plate) on one end side in the longitudinal direction of the support plate 28 at intervals in the width direction of the plate. Both ends of a rotary shaft 31 fixed to one end of the support rod 30 are rotatably supported. On the surface of each of the support plates 28 on the other end side in the longitudinal direction, elongated support fittings 32, 32 extending in the longitudinal direction of the metal plate 27 are fixed, and in the long holes 32a, 32a provided in these support fittings, Both ends of a shaft 34 fixed to one end of the support rod 33 are slidably fitted. In the metal plate 27, as shown in FIG. 3, the flexible conductors 28a and 28a provided on both ends of the respective support plates 28 and 28 in the width direction have both H surfaces 16c and 16 of the waveguide 16.
The metal plate 2 is arranged in elastic contact with the inside
Reference numeral 7 is electrically connected to both H surfaces of the waveguide 16 through the support plate 28 and the flexible conductors 28a, 28a.

On the outer surface of the H surface 16e of the coupling rectangular waveguide 16, boss members 35 and 36 corresponding to the support rods 30 and 33 attached to both ends of the support plate 28 are fixed, respectively. 35 and 36 and H face 16e of the waveguide
The support rods 30 and 3 in the holes provided through the pipe wall of
3 is slidably fitted. Knobs 37 and 38, which also function as stoppers, are attached to the outer ends of the support rods 30 and 33 by screw coupling or the like, and these knobs are used as boss members 3.
By abutting on 5 and 36, the support rods 30 and 33
The amount of displacement of the inside of the waveguide is regulated. Set screws 39 and 40 for locking the support rods 30 and 33 are attached to the boss members 35 and 36, respectively, and the support rods 30 and 33 are fixed at arbitrary positions by tightening these set screws. You can do it. The support rods 30 and 33, the boss members 35 and 36, the knobs 37 and 38, and the set screw 39.
And 40 form position adjusting mechanisms PA1 and PA2.

The metal plate 27 is for adjusting the amount of microwave power propagating into the plasma chamber through the respective portions of the slit 16b, and the support rods 30 and 33 are inserted into the waveguide 16. By adjusting the amount, slit 16
In order to make the microwave power that propagates through b into the plasma chamber substantially uniform along the longitudinal direction of the slit,
The inclination angle of the metal plate 27 with respect to the slit 16b is adjusted. In the illustrated example, the end of the metal plate 27 on the power supply side is arranged in a position close to the E surface 16e of the waveguide 16, and the end on the side opposite to the power supply is arranged in a position close to the slit 16b. . Therefore, on one end side (power supply side) of the waveguide 16,
As shown in FIG. 2, the E surface 1 of the waveguide 16 of the metal plate 27
The gap with respect to 6a is set wide, and the gap with respect to the E surface 16a of the metal plate 27 is set narrow on the other end side of the waveguide 16.

When performing plasma processing using the plasma processing apparatus of the above-mentioned embodiment, the object 20 to be processed is set in the plasma chamber 18 and then the inside of the plasma chamber 18 is brought to a high vacuum state. After that, a predetermined process gas is supplied from the process gas introduction pipe 41 into the plasma chamber 18 until the pressure inside the plasma chamber reaches a predetermined pressure. In this state, from the microwave power source 11, the isolator 12, the directional coupler 1
3 is supplied to one end of the rectangular waveguide 16 for plasma chamber coupling through the impedance matching device 14 and the impedance matching device 14,
The microwave that has entered the rectangular waveguide 16 has a slit 1
As shown by the solid line in FIG. 3, it propagates into the plasma chamber 18 through 6b and the window portion 18b of the plasma chamber, and the process gas in the plasma chamber is turned into plasma to generate band-shaped plasma. The plasma is applied to the object to be processed 20 and a predetermined process is performed. The microwave that has not propagated into the plasma chamber is absorbed by the dummy load 17.

Particularly, as in the above-mentioned embodiment, when the metal plate 27 is arranged in the plasma chamber coupling waveguide 16, the length of the slit can be adjusted by adjusting the inclination angle of these metal plates with respect to the slit 16b. Along the direction, the electric power of the microwave propagating through the slit into the plasma chamber can be made substantially uniform. Therefore, the density of each part of the band-shaped plasma generated along the window 18b can be made uniform, and each part of the object to be processed can be uniformly irradiated with the plasma.

When the metal plate 27 is arranged in the waveguide 16 as described above, the microwaves that have entered the waveguide 16 are divided into both sides of the metal plate. In addition, if the end of the metal plate 27 on the power supply side end of the waveguide 16 is brought close to the E surface 16e of the waveguide, almost all the microwaves of the waveguide 16 of the metal plate 27 can be generated. E side 16a
Can be propagated on the side.

The metal plate disposed in the plasma chamber coupling rectangular waveguide 16 is for making the microwave power that passes through the slit 16b and propagates into the plasma chamber substantially uniform along the longitudinal direction of the slit. It is sufficient if there is, for example
As shown in, using a metal plate 270 having a bend,
At least three or more position adjusting mechanisms PA1, PA2, P
When the shape is arbitrary according to A3, more diverse plasma distribution can be adjusted.

In the above-mentioned embodiment, since the plasma is generated in a band shape along the longitudinal direction of the window portion of the plasma chamber, it is possible to irradiate the plasma to the entire width direction of the object to be processed 20 having a large area. By winding the processed material 20 by the roller 22 and moving it in the minor axis direction of the slit 16b, the plasma processing can be continuously performed. The object to be processed has a sheet shape, but the shape of the object to be processed is arbitrary in the present invention.

Further, in the above-described embodiment, since the magnetic field is generated in the space between the object to be processed and the window 18b by providing the magnetic field generating means 23, the ions in the plasma are generated by the magnetic field. Receives a spiral motion. As a result, the ionization of the process gas is promoted, and the density of the plasma with which the workpiece 20 is irradiated is increased. Furthermore, if the strength of the magnetic field generated by the magnetic field generating means 23 is set so as to generate electron cyclotron resonance in the space between the object to be processed and the window 18b, the plasma density will be dramatically increased. You can

The magnetic field generating means 23 is used for the object to be processed 20.
The magnetic field may be generated in the space between the window 18b and the window 18b, and is not limited to the one shown in the above embodiment. For example, as shown in FIG. 6, the magnets 42 and 43 are arranged on both sides of the window portion 18b in the minor axis direction, and one magnet 4
The second N pole and the S pole of the other magnet 43 may be opposed to each other. Also in this case, it is preferable that the magnets 42 and 43 each have a length that is substantially the same as the length of the window portion 18b, or a length that is slightly longer than the window portion 18b. Further, by installing a plurality of magnets 42 and 43 at intervals in the longitudinal direction of the window portion 18b, the window portion 18b
You may make it produce a substantially uniform magnetic field along the longitudinal direction of b.

Further, as shown in FIG. 7, the slit 16
The magnets 44 and 45 arranged on both sides of b in the rectangular waveguide 16 were made to oppose to the magnets 46 and 47 arranged in the space on the back surface side of the workpiece 20 in the plasma chamber 18, respectively. It may be one. In this case, the magnets 44 and 45 are magnetized in the same direction, and the magnets 46 and 47 are magnetized in the same direction as the magnets 44 and 45. Also in this case, it is desirable that each magnet has a length that is substantially the same as the length of the slit and the window portion, or a length that is longer than the slit and the window portion. Further, by arranging a plurality of each magnet along the longitudinal direction of the slit and the window, a uniform magnetic field may be generated along the longitudinal direction of the window.

In the above magnetic field generating means, the microwave propagating through the window of the plasma chamber into the plasma chamber propagates from the weak magnetic field region to the strong magnetic field region. It is preferable to dispose the light in a weak region from the above. That is, if a divergent magnetic field generating means for forming a divergent magnetic field is separately provided so that the magnetic field is directed to the plasma chamber at the central portion in the width direction of the window portion of the plasma chamber, the magnetic field is centered in the width direction of the window portion of the plasma chamber. If a divergent magnetic field generating means for forming a divergent magnetic field is provided so that the divergent magnetic field is directed toward the plasma chamber at the portion, the plasma can be further guided to the object to be processed.

When this divergent magnetic field generating means is used, a permanent magnet 90 as a divergent magnetic field generating means similar to the permanent magnet 24 is provided between the waveguide 16 and the plasma chamber 18, as shown in FIG. A magnet accommodating member 91 made of a good conductor such as aluminum, copper, or stainless steel, which forms a microwave waveguide, is arranged around the magnet in the longitudinal direction. In the central portion of the magnet housing member in the width direction on the waveguide 16 side,
A slit 91a having the same size as the slit 16b extending in the axial direction of the waveguide is provided, and both slits are arranged in a combined state and fixed to the waveguide 16 by appropriate means.

The permanent magnet 90 has its north and south poles aligned with the central axis of the plasma chamber 18 in the width direction of the window portion 18b of the plasma chamber 18, and, for example, the N pole is located closer to the plasma chamber, and the width of the window portion is reduced. A divergent magnetic field shown by a broken line is formed so as to be directed to the plasma chamber at the central portion of the direction, and the entire surface of the magnet 90 in the longitudinal direction is covered with the thin plate 92 of the good conductor. This magnet has a slit 91a extending from the slit 91a toward the plasma chamber.
The magnet housing member 91 is arranged in the magnet housing member 91 so as to form two waveguides 93a and 93b having the same size as the longitudinal direction of a, and the magnet housing member is fixed to the plasma chamber by appropriate means.

The ends of the plasma chambers of the two waveguides 93a and 93b are in contact with the surface of the quartz glass plate 19.
Therefore, the microwave that has entered the waveguide 16 passes through the slit 16b and the slit 91a, propagates through the two waveguides 93a and 93b, and becomes the window portion 1 of the plasma chamber.
As indicated by a solid line from 8, the magnetic field propagates from the strong magnetic field region to the weak magnetic field region into the plasma chamber 18. Regarding the arrangement of the magnets, the S pole may be closer to the plasma chamber.

Further, as shown in FIG. 9, the microwave that has entered the waveguide 16 is converted into the above-mentioned two waveguides 93a, 93.
b, two slits 16aa, 1 for propagating respectively
6bb and slits 91a and 91b may be provided.

Further, as shown in FIG. 10, an electromagnet 94 as a divergent magnetic field generating means is provided in the slit 16 of the waveguide 16.
It may be provided on the outer circumference of the waveguide 16 near b, and the divergent magnetic field is formed as shown by the broken line.

In addition to the divergent magnetic field generating means by the permanent magnet, as shown in FIG. 11, electromagnets 95, 96
The diverging magnetic field generation means by means of the magnet storage member 9 inside the plasma chamber 18 near the window 18b and the magnet housing member 9 near the plasma chamber
The electromagnets 95 and 96 may be provided on the outer periphery of the magnet 1 or may be used alone or in combination. In this case, the divergent shape of the magnetic field can be controlled by the current flowing through the electromagnet.

Although the divergent magnetic field generating means is used in combination with the above-mentioned magnetic field generating means, the divergent magnetic field generating means may be used alone as long as a desired magnetic field strength can be obtained.

Although the magnetic field generating means is composed of a permanent magnet, an electromagnet may be used as the magnetic field generating means instead of the permanent magnet. In particular, when it is provided in the plasma chamber 18, an electromagnet can prevent the magnetic force from being lowered due to heat like a permanent magnet.

Further, in the above embodiment, the plasma chamber 18
The quartz glass plate 19 is attached so as to hermetically close the window portion 18b of the rectangular waveguide 16, thereby forming the slit 16b of the rectangular waveguide 16.
Vacuum sealing is performed on the joint between the plasma chamber 18 and the window 18b. However, in the present invention, the joint between the slit 16b and the window 18b may be vacuum sealed with a substance that does not absorb microwaves. The vacuum sealing structure is not limited to the above example. For example, a quartz glass plate 19 is attached to the rectangular waveguide 16 side, and the slit 1 is formed by the glass plate.
6b may be closed, and the E surface 16a of the rectangular waveguide 16 provided with the slit may be hermetically connected to the side wall portion 18a of the plasma chamber 18 provided with the window portion. Further, when the quartz glass plate 19 is attached near the inner wall of the plasma chamber 18, the generated plasma does not enter the microwave propagation path and block the propagation, so that the microwave can be efficiently introduced into the plasma chamber. it can. Further, instead of the quartz glass plate, a plate made of another substance that does not absorb microwaves may be used.

[0036]

As described above, according to the present invention, a slit is formed on the E surface of the plasma chamber coupling rectangular waveguide, and the slit is coupled to the window portion provided in the plasma chamber. Microwaves can be propagated through the portion into the plasma chamber to generate a band-shaped plasma along the window portion. Therefore, there is an advantage that the plasma treatment can be performed by irradiating the plasma over the entire length of the treatment surface of the treatment object having a large area. In addition, since the electric power of the microwave that is supplied from one end of the plasma chamber coupling waveguide and propagates through the slit into the plasma chamber can be made almost uniform along the longitudinal direction of the slit, the plasma density of each part of the strip-shaped plasma can be increased. Can be made substantially uniform.

According to the invention described in claim 2,
Since the magnetic field is generated in the space between the object to be processed and the window portion, it is possible to increase the density of the plasma with which the object to be processed is irradiated and to increase the processing efficiency. Further, when the divergent magnetic field generating means for forming the divergent magnetic field is provided so that the magnetic field is directed to the plasma chamber at the widthwise central portion of the window of the plasma chamber, the plasma density can be further dramatically increased.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an overall configuration of an embodiment of the present invention.

FIG. 2 is a vertical cross-sectional view showing the configuration of the main part of the embodiment of the present invention.

FIG. 3 is an enlarged cross-sectional view taken along the line AA of FIG.

FIG. 4 is a perspective view showing a support structure for a metal plate applied to an embodiment of the present invention.

5 is a vertical cross-sectional view of FIG. 1 showing a modification of the metal plate applied to the embodiment of the present invention.

FIG. 6 is a sectional view showing a modified example of the magnetic field generating means applied to the embodiment of the present invention.

FIG. 7 is a sectional view showing another modified example of the magnetic field generating means applied to the embodiment of the present invention.

FIG. 8 is a sectional view showing a first modification of the divergent magnetic field generating means in the magnetic field generating means applied to the embodiment of the present invention.

FIG. 9 is a sectional view showing a second modified example of the divergent magnetic field generating means in the magnetic field generating means applied to the embodiment of the present invention.

FIG. 10 is a sectional view showing a third modified example of the divergent magnetic field generating means in the magnetic field generating means applied to the embodiment of the present invention.

FIG. 11 is a sectional view showing a fourth modified example of the divergent magnetic field generating means in the magnetic field generating means applied to the embodiment of the present invention.

FIG. 12 is a configuration diagram showing an example of a conventional plasma processing apparatus.

[Explanation of symbols]

 11 microwave power source 16 rectangular waveguide for plasma chamber coupling 16b, 16aa, 16bb slit 18 plasma chamber 20 object to be treated 23, 90, 94, 95, 96 magnetic field generating means 27, 270 metal plate.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Masato Sugio 2-11-1, Tagawa, Yodogawa-ku, Osaka City Daihen Co., Ltd.

Claims (2)

[Claims] 1. A side wall has an elongated window portion, a plasma chamber in which an object to be processed is placed inside the window portion, and a slit extending in the tube axis direction on the E surface, and the tube axis direction is defined as the above. A plasma chamber coupling rectangular waveguide arranged in a state of being aligned with the longitudinal direction of the window portion of the plasma chamber and having the slit coupled to the window portion, and a microwave supplied from one end of the rectangular waveguide. Is arranged in the rectangular waveguide so that the electric power of the microwave passing through the slit is substantially uniform along the longitudinal direction of the slit, and the rectangular waveguide is inclined along the longitudinal direction of the slit. A metal plate disposed opposite to the E surface of the wave guide; and a microwave power source for supplying microwaves to the rectangular wave guide, wherein the slit of the rectangular wave guide and the window of the plasma chamber are provided. The joint of is a material that does not absorb microwaves Plasma processing equipment that is vacuum-sealed by. 2. The plasma processing apparatus according to claim 1, further comprising magnetic field generating means for generating a magnetic field in a space between the object to be processed arranged in the plasma chamber and the window.