JPH06224267A - Inspection device for wire bonding - Google Patents

Inspection device for wire bonding

Info

Publication number
JPH06224267A
JPH06224267A JP2727893A JP2727893A JPH06224267A JP H06224267 A JPH06224267 A JP H06224267A JP 2727893 A JP2727893 A JP 2727893A JP 2727893 A JP2727893 A JP 2727893A JP H06224267 A JPH06224267 A JP H06224267A
Authority
JP
Japan
Prior art keywords
ball
semiconductor chip
focus lens
optical camera
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2727893A
Other languages
Japanese (ja)
Other versions
JP3259398B2 (en
Inventor
Kikuo Goto
喜久雄 後藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2727893A priority Critical patent/JP3259398B2/en
Publication of JPH06224267A publication Critical patent/JPH06224267A/en
Application granted granted Critical
Publication of JP3259398B2 publication Critical patent/JP3259398B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Abstract

PURPOSE:To provide an inspection device which can accurately measure the thickness of a ball pressed in the upper surface of a semiconductor chip by measuring an amount of movement of a focus lens moved until the plane image of the ball is into agreement with the pattern image of the cone part of the preset ball. CONSTITUTION:This inspection device is provided with an optical camera 11 having a focus lens 15 for taking in the plane image of a ball 3 pressed on a semiconductor chip 1 and a setting means for setting predetermined clearance bet the upper surface of the semiconductor chip 1 and the focus lens 15, and also provided with a driving means 12 for moving the focus lens 15 in the direction of being at a right angle to the upper surface of the semiconductor chip 1 and a measuring means for measuring an amount of movement of the focus lens 15 moved by the driving means 12. Further, it is provided with a decision means for deciding as to whether the plane image of a ball 3 taken in through the focus lens 15 is in agreement with the pattern image of the cone part 5 of a preset ball 3 or not.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体チップ上に圧着
されたボールの厚さを検査する際に用いて好適なワイヤ
ボンディングの検査装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wire bonding inspection apparatus suitable for inspecting the thickness of a ball pressed onto a semiconductor chip.

【0002】[0002]

【従来の技術】一般に、半導体装置のワイヤボンディン
グ工程では、製品の信頼性を確保するため、ボンディン
グ後に種々の形状検査が行われる。この種の検査は、そ
のほとんどが、例えば第1ボンド側のボール径や位置並
びに第2ボンド側のクレセント径や位置、さらにはワイ
ヤの曲がりやワイヤの間隔といった、いわゆる二次元的
な検査によってまかなわれていた。
2. Description of the Related Art Generally, in a wire bonding process of a semiconductor device, various shape inspections are performed after bonding in order to ensure the reliability of products. Most of this type of inspection can be performed by so-called two-dimensional inspection such as the ball diameter and position on the first bond side and the crescent diameter and position on the second bond side, as well as the bending of the wire and the distance between the wires. It was

【0003】[0003]

【発明が解決しようとする課題】ところで、ワイヤの圧
着強度をより正確に把握するには、上述の検査項目に加
えて、ボンディング後のボールの厚さを検査することが
必要となる。これは、半導体チップ上に圧着されたボー
ルのつぶれ具合がワイヤの圧着強度を大きく左右するか
らである。しかしながら従来の検査装置では、ワイヤの
高さ寸法のように測定レンジが100〜300μmとい
った広い範囲の場合は、周知のオートフォーカス技術に
よって比較的容易に測定することができるが、ボールの
厚さ寸法のように測定レンジが10〜30μmといった
狭い範囲の場合は、周知のオートフォーカス技術を駆使
しても、それを正確に測定することができなかった。
By the way, in order to grasp the crimp strength of the wire more accurately, in addition to the above-mentioned inspection items, it is necessary to inspect the thickness of the ball after bonding. This is because the crushing condition of the ball crimped on the semiconductor chip greatly affects the crimp strength of the wire. However, in the conventional inspection apparatus, when the measurement range is as wide as 100 to 300 μm like the height dimension of the wire, the measurement can be performed relatively easily by the well-known autofocus technique. In the case where the measurement range is as narrow as 10 to 30 μm as described above, it was not possible to accurately measure it even by making full use of the well-known autofocus technology.

【0004】本発明は、上記問題を解決するためになさ
れたもので、半導体チップの上面に圧着されたボールの
厚さを正確に測定することができるワイヤボンディング
の検査装置を提供することを目的とする。
The present invention has been made to solve the above problems, and an object of the present invention is to provide a wire bonding inspection device capable of accurately measuring the thickness of a ball pressed onto the upper surface of a semiconductor chip. And

【0005】[0005]

【課題を解決するための手段】本発明は、上記目的を達
成するためになされたもので、半導体チップの上面に形
成された電極パッドと半導体チップの周辺に配置された
インナーリードとをワイヤにて接続するワイヤボンディ
ングにおいて、半導体チップの上面に圧着されたボール
の厚さを検査する検査装置であって、半導体チップ上に
圧着されたボールの平面画像を取り込むためのフォーカ
スレンズを有する光学カメラと、半導体チップの上面と
光学カメラのフォーカスレンズとの間に所定の離間距離
を設定する設定手段と、半導体チップの上面と直角をな
す方向に光学カメラのフォーカスレンズを移動させるた
めの駆動手段と、駆動手段によるフォーカスレンズの移
動量を計測する計測手段と、フォーカスレンズを通して
取り込まれたボールの平面画像が予め設定されたボール
のコーン部パターン画像に一致するかどうかを判定する
判定手段とを具備したものである。
The present invention has been made in order to achieve the above-mentioned object, and an electrode pad formed on the upper surface of a semiconductor chip and an inner lead arranged around the semiconductor chip are connected to a wire. In a wire bonding for connecting with each other, an inspection device for inspecting a thickness of a ball crimped on an upper surface of a semiconductor chip, comprising an optical camera having a focus lens for capturing a plane image of the ball crimped on the semiconductor chip. A setting means for setting a predetermined distance between the upper surface of the semiconductor chip and the focus lens of the optical camera, and a driving means for moving the focus lens of the optical camera in a direction perpendicular to the upper surface of the semiconductor chip, Measuring means for measuring the amount of movement of the focus lens by the driving means, and the bow taken through the focus lens Plane image is obtained by including a determination means for determining whether matching cone pattern image of a ball which is set in advance.

【0006】[0006]

【作用】本発明のワイヤボンディングの検査装置におい
ては、フォーカスレンズを通して取り込まれたボールの
平面画像と予め設定されたボールのコーン部パターン画
像とが一致するまでに移動させたフォーカスレンズの移
動量を基に、半導体チップの上面に圧着されたボールの
厚さが検出される。
In the wire bonding inspection apparatus of the present invention, the movement amount of the focus lens moved until the planar image of the ball taken in through the focus lens and the preset cone pattern image of the ball coincide with each other. Based on this, the thickness of the ball pressed onto the upper surface of the semiconductor chip is detected.

【0007】[0007]

【実施例】まず、本実施例におけるワイヤボンディング
の検査装置を説明する前に、ワイヤボンディングにおけ
るボールの圧着形態について説明しておく。一般に、ワ
イヤボンディングはウェッジツールやキャピラリといっ
たボンディングツールを用いて行われ、その中でも特に
ボールボンディングの場合はキャピラリが用いられる。
First, before describing the wire bonding inspection apparatus in this embodiment, the ball pressure bonding mode in wire bonding will be described. Generally, wire bonding is performed using a bonding tool such as a wedge tool or a capillary, and in particular, in the case of ball bonding, the capillary is used.

【0008】この種のワイヤボンディングでは、まずキ
ャピラリの先端からワイヤを繰り出し、更にその繰り出
したワイヤの先端に熱溶融によって球形のボールを形成
する。次に、図2(a)に示すように、半導体チップ1
の上面に形成された電極パッド(不図示)に、キャピラ
リ2の押下力によってボール3を圧接し、さらに超音波
や熱を加えてボール3を電極パッドに圧着させる。その
後、図2(b)に示すようにキャピラリ2を上昇させ
て、そのまま第2ボンド側、つまりインナーリード(不
図示)に向けてキャピラリ2を移動させる。
In this type of wire bonding, first, a wire is paid out from the tip of the capillary, and then a spherical ball is formed at the tip of the drawn wire by heat fusion. Next, as shown in FIG. 2A, the semiconductor chip 1
The ball 3 is pressed against the electrode pad (not shown) formed on the upper surface of the device by the pressing force of the capillary 2, and ultrasonic waves or heat is further applied to press the ball 3 onto the electrode pad. After that, as shown in FIG. 2B, the capillary 2 is raised, and the capillary 2 is moved toward the second bond side, that is, the inner lead (not shown) as it is.

【0009】こうして半導体チップ1上の電極パッドに
圧着されたボール3は図3に示すような押しつぶされた
状態となる。このとき、ボール3の上側には、キャピラ
リ2の先端に形成されたインサイドチャンファ部4(図
2参照)によって必ずコーン部5と呼ばれる円錐部分が
形成され、且つそのコーン部5の周辺には平坦部6が形
成される。したがって、例えば半導体チップの上方に光
源を設置して、この光源から半導体チップ上のボールに
向けて光を照射すると、図4に示すように、コーン部5
に照射した光は外方に向けて反射し、コーン部5周辺の
平坦部6に照射した光は元の光源に向けて反射する。こ
のことから、半導体チップ上のボールに光を照射して、
これを光学カメラによりモニター上に写し出すと、図4
の上側に描いたように、その中心部からコーン部5の輪
郭部分までは暗く(黒っぽく)写し出され、コーン部5
周辺の平坦部6は光の反射によって明るく(白っぽく)
写し出される。
The ball 3 thus crimped to the electrode pad on the semiconductor chip 1 is in a crushed state as shown in FIG. At this time, on the upper side of the ball 3, a cone portion called a cone portion 5 is always formed by the inside chamfer portion 4 (see FIG. 2) formed at the tip of the capillary 2, and the periphery of the cone portion 5 is flat. The part 6 is formed. Therefore, for example, when a light source is installed above the semiconductor chip and light is emitted from this light source toward the balls on the semiconductor chip, as shown in FIG.
The light radiated to the outside is reflected outward, and the light radiated to the flat portion 6 around the cone portion 5 is reflected toward the original light source. From this, the ball on the semiconductor chip is irradiated with light,
When this is displayed on the monitor with an optical camera,
As shown in the upper part of the drawing, the area from the center to the contour of the cone 5 is projected dark (blackish),
The peripheral flat portion 6 is bright (whitish) due to the reflection of light.
Projected.

【0010】これまでの内容を踏まえて、実施例のワイ
ヤボンディングの検査装置について図面を参照しながら
詳細に説明する。図1は、本発明に係わるワイヤボンデ
ィングの検査装置を説明するための概略構成図である。
まず図において、1は半導体チップであり、この半導体
チップ1の上面には図示せぬ電極パッドが形成されてい
る。また、半導体チップ1の周辺にはインナーリード7
が配置されており、半導体チップ1上の電極パッド(不
図示)とインナーリード7とはワイヤ8を介して接続さ
れている。そして、ワイヤ8の一端に形成されたボール
3は、図示せぬキャピラリによって半導体チップ1上に
圧着されている。
Based on the above contents, the wire bonding inspection apparatus of the embodiment will be described in detail with reference to the drawings. FIG. 1 is a schematic configuration diagram for explaining a wire bonding inspection apparatus according to the present invention.
First, in the figure, 1 is a semiconductor chip, and an electrode pad (not shown) is formed on the upper surface of the semiconductor chip 1. In addition, inner leads 7 are provided around the semiconductor chip 1.
Are arranged, and the electrode pads (not shown) on the semiconductor chip 1 and the inner leads 7 are connected via the wires 8. The ball 3 formed at one end of the wire 8 is pressure-bonded onto the semiconductor chip 1 by a capillary (not shown).

【0011】ここで、本実施例のワイヤボンディングの
検査装置は、半導体チップ1上に圧着されたボール3の
厚さtを検査するためのものであり、大きくは光学カメ
ラ11と、設定手段と、駆動手段12と、計測手段13
と、判定手段14とから構成されている。
Here, the wire bonding inspection apparatus of this embodiment is for inspecting the thickness t of the ball 3 pressed onto the semiconductor chip 1, and roughly includes an optical camera 11 and setting means. Drive means 12 and measuring means 13
And a determination means 14.

【0012】まず光学カメラ11は、図示せぬXYテー
ブル上に搭載されており、XYテーブルの駆動により予
めプログラムされた指示にしたがって水平移動するよう
になっている。また、この光学カメラ11には、半導体
チップ1上に圧着されたボール3の平面画像を取り込む
ためのフォーカスレンズ15が内蔵されている。更に、
光学カメラ11には絞り機構が内蔵されており、この絞
り機構は検査時に開放されてフォーカスレンズ15の被
写体深度を極力浅く設定できるようになっている。
First, the optical camera 11 is mounted on an XY table (not shown) and is designed to move horizontally according to a pre-programmed instruction by driving the XY table. Further, the optical camera 11 has a built-in focus lens 15 for taking in a planar image of the ball 3 pressed onto the semiconductor chip 1. Furthermore,
The optical camera 11 has a built-in diaphragm mechanism, and this diaphragm mechanism is opened during inspection so that the subject depth of the focus lens 15 can be set as shallow as possible.

【0013】設定手段は、半導体チップ1の上面と上記
光学カメラ11のフォーカスレンズ15との間に所定の
離間距離を設定するものである。本実施例では、例えば
レーザ発光部16から発したレーザ光を、図中破線矢印
で示すように光学カメラ11に内蔵させたハーフミラー
17で反射させて、これを半導体チップ1の上面に照射
することで、半導体チップ1上面の任意の三点からフォ
ーカスレンズ15までの離間距離を求め、半導体チップ
1上面の平面方程式を算出する。そして、この算出した
平面の方程式を基に光学カメラ11を移動させて、測定
対象となるボール3の圧着箇所における半導体チップ1
の上面と光学カメラ11のフォーカスレンズ15との間
に所定の離間距離(後述)を設定できるようになってい
る。
The setting means sets a predetermined distance between the upper surface of the semiconductor chip 1 and the focus lens 15 of the optical camera 11. In the present embodiment, for example, the laser light emitted from the laser emitting section 16 is reflected by the half mirror 17 incorporated in the optical camera 11 as shown by the broken line arrow in the figure, and this is irradiated onto the upper surface of the semiconductor chip 1. Thus, the separation distance from any three points on the upper surface of the semiconductor chip 1 to the focus lens 15 is obtained, and the plane equation of the upper surface of the semiconductor chip 1 is calculated. Then, the optical camera 11 is moved based on the calculated equation of the plane, and the semiconductor chip 1 at the pressure-bonded portion of the ball 3 to be measured is moved.
A predetermined separation distance (described later) can be set between the upper surface of the lens and the focus lens 15 of the optical camera 11.

【0014】駆動手段12は、半導体チップ1の上面と
直角をなす方向に光学カメラ11のフォーカスレンズ1
5を移動させるためのものである。本実施例では、光学
カメラ11のフォーカスレンズ15を1/60秒で1ピ
ッチ移動するように設定するとともに、検査精度等を考
慮して1ピッチ当たりのレンズ移動量を任意に設定でき
るようにした。
The driving means 12 drives the focus lens 1 of the optical camera 11 in a direction perpendicular to the upper surface of the semiconductor chip 1.
It is for moving 5. In the present embodiment, the focus lens 15 of the optical camera 11 is set to move by 1 pitch in 1/60 seconds, and the lens movement amount per pitch can be set arbitrarily in consideration of inspection accuracy and the like. .

【0015】計測手段13は、上記駆動手段12による
フォーカスレンズ15の移動量を計測するものであり、
本実施例では、光学カメラ11の動作制御によりボール
3の平面画像をフォーカスレンズ15を通して1/60
秒毎に取り込むように設定した。これにより、画面取り
込みのタイミングと上記フォーカスレンズ15の移動速
度とは互いに同期するようになるため、平面画像の取り
込み数からフォーカスレンズ15の移動量が正確に計測
できるようになる。
The measuring means 13 measures the amount of movement of the focus lens 15 by the driving means 12,
In this embodiment, the plane image of the ball 3 is passed through the focus lens 15 to 1 / 60th by the operation control of the optical camera 11.
It was set to capture every second. As a result, the timing of capturing the screen and the moving speed of the focus lens 15 are synchronized with each other, so that the amount of movement of the focus lens 15 can be accurately measured from the number of captured planar images.

【0016】判定手段14は、フォーカスレンズ15を
通して取り込まれたボール3の平面画像が予め設定され
たボールのコーン部パターン画像(後述)に一致するか
どうかを判定するものであり、本実施例では、実際に取
り込まれたボール3の平面画像と予め設定されたコーン
部パターン画像とを画像処理によって比較することで、
双方の画像が一致しているかどうかの判定を行うように
した。
The determination means 14 determines whether or not the plane image of the ball 3 taken in through the focus lens 15 matches a preset cone portion pattern image (described later) of the ball, and in the present embodiment. By comparing the plane image of the ball 3 actually taken in with the preset cone portion pattern image by image processing,
It was determined whether or not both images match.

【0017】続いて、本実施例のワイヤボンディングの
検査装置を用いてボールの厚さを検査する際の動作手順
について説明する。まず、第1の段階では、測定対象と
なるボール3の上方に光学カメラ11を配置するととも
に、そのボール3の圧着箇所における半導体チップ1の
上面と光学カメラ11のフォーカスレンズ15との間に
所定の離間距離を設定する。本実施例では、半導体チッ
プ1の上面にフォーカスレンズ15の焦点位置がくるよ
うに光学カメラ11を位置決めし、上記離間距離を設定
した。
Next, the operation procedure for inspecting the ball thickness using the wire bonding inspection apparatus of this embodiment will be described. First, in the first step, the optical camera 11 is arranged above the ball 3 to be measured, and a predetermined distance is provided between the upper surface of the semiconductor chip 1 and the focus lens 15 of the optical camera 11 at the pressure-bonded portion of the ball 3. Set the separation distance of. In this embodiment, the optical camera 11 is positioned so that the focus position of the focus lens 15 is on the upper surface of the semiconductor chip 1, and the above-mentioned distance is set.

【0018】なお、検査装置の処理能力等を考慮する
と、ボール3の厚さtの規格範囲を若干越えた位置に初
期のフォーカスレンズ15の焦点位置がくるように光学
カメラ11を位置決めする方が効率的である。その一例
として、ボール3の厚さtの規格範囲が10〜20μm
に設定されている場合は、フォーカスレンズ15の焦点
位置が半導体チップ1の上面よりも8μm程度上方にく
るように設定する。
In consideration of the processing capability of the inspection device, it is better to position the optical camera 11 so that the initial focus position of the focus lens 15 is slightly above the standard range of the thickness t of the ball 3. It is efficient. As an example, the standard range of the thickness t of the ball 3 is 10 to 20 μm.
If it is set to, the focus position of the focus lens 15 is set to be above the upper surface of the semiconductor chip 1 by about 8 μm.

【0019】次いで、第2の段階では、半導体チップ1
の上面と直角をなす方向、この場合は上方に一定ピッチ
でフォーカスレンズ15を移動させながら、半導体チッ
プ1上に圧着されたボール3の平面画像をフォーカスレ
ンズ15を通して順次取り込むようにする。
Next, in the second stage, the semiconductor chip 1
While moving the focus lens 15 in a direction perpendicular to the upper surface of the device, in this case, at a constant pitch, the plane images of the balls 3 pressed onto the semiconductor chip 1 are sequentially taken in through the focus lens 15.

【0020】ここで、フォーカスレンズ15の焦点位置
が例えば図5に示すようにF1〜F5に存在する場合の
各々のボール3の平面画像を概略説明する。まず、焦点
位置がF1に存在する場合は、図6(a)に示すように
薄くぼやけたかたちでボール3の模様が写し出される。
次いで、焦点位置がF2に存在する場合は、図6(b)
に示すようにボール3の輪郭部分が幾分ぼやけたかたち
で薄く写し出される。続いて、焦点位置がF3に存在す
る場合は、図6(c)に示すようにボール3のコーン部
5の輪郭部分が明瞭に写し出される。さらに、焦点位置
がF4に存在する場合は、図6(d)に示すように全体
的にぼやけたかたちでワイヤ8とボール3の付け根部分
が薄く写し出される。そして、焦点位置がF5に存在す
る場合は、図6(e)に示すようにワイヤ8のすじが薄
く写し出される。
Here, a plane image of each ball 3 when the focus position of the focus lens 15 exists in F1 to F5 as shown in FIG. 5 will be briefly described. First, when the focus position is at F1, the pattern of the ball 3 is projected in a faint form as shown in FIG. 6 (a).
Next, when the focus position is at F2, FIG.
As shown in, the outline of the ball 3 is slightly blurred and slightly projected. Then, when the focus position is at F3, the contour portion of the cone portion 5 of the ball 3 is clearly projected as shown in FIG. 6 (c). Further, when the focus position is at F4, the root portion of the wire 8 and the ball 3 is thinly projected in an overall blurred form as shown in FIG. 6 (d). When the focus position is located at F5, the streak of the wire 8 is lightly projected as shown in FIG. 6 (e).

【0021】上記平面画像の中で、予め検査装置に記憶
設定されているボールのコーン部パターン画像に相当す
るのは、図6(c)に示すボール3の平面画像である。
すなわち、予めボールのコーン部パターン画像として装
置に設定されている画像とは、測定対象となるボール3
のコーン部5の輪郭部分が明瞭にとらえられた状態の画
像のことである。そして、コーン部5の輪郭部分が明瞭
に写し出される位置とは、フォーカスレンズ15の焦点
位置がF3に存在したときだけであり、これは、ボール
3に光を照射した場合に、コーン部5では光が外方に反
射して暗く写し出され、コーン部5周辺の平坦部6では
光が光学カメラ11側に反射して明るく写しだされるこ
とによって、その境界線であるコーン部5の輪郭部分が
明瞭に写し出されたためである。
In the plane image, the plane image of the ball 3 shown in FIG. 6 (c) corresponds to the cone portion pattern image of the ball stored and set in the inspection apparatus in advance.
That is, the image previously set in the device as the cone image pattern of the ball means the ball 3 to be measured.
It is an image in which the contour portion of the cone portion 5 is clearly captured. The position at which the contour of the cone portion 5 is clearly projected is only when the focus position of the focus lens 15 is at F3. This is because when the ball 3 is irradiated with light, The light is reflected outwardly and is projected darkly, and in the flat portion 6 around the cone portion 5, the light is reflected toward the optical camera 11 side and is projected brightly, so that the boundary portion is the contour portion of the cone portion 5. Because it was clearly projected.

【0022】したがって本実施例では、実際にフォーカ
スレンズ15を通して取り込まれるボール3の平面画像
と予め設定されたコーン部パターン画像とが画像処理に
よって次々に比較され、その都度、双方の画像が一致す
るかどうかの判定がなされる。そして、上述した双方の
画像が一致した場合は、それまでに移動させたフォーカ
スレンズ15の移動量を基にボール3の厚さt(図1)
が検出される。すなわち、焦点位置をF1〜F3まで変
位させたということは、言い換えるとその分だけフォー
カスレンズ15を上方、つまりf1〜f3(図1)まで
移動させたということであり、このf1〜f3までの移
動量を上記計測手段で計測することにより、ボール3の
厚さtが正確に割り出される。
Therefore, in the present embodiment, the plane image of the ball 3 actually taken in through the focus lens 15 and the preset cone portion pattern image are compared one after another by image processing, and the two images match each time. Whether or not it is determined. Then, when the both images described above match, the thickness t of the ball 3 (FIG. 1) is determined based on the amount of movement of the focus lens 15 that has been moved until then.
Is detected. That is, displacing the focus position from F1 to F3 means, in other words, moving the focus lens 15 upward by that much, that is, from f1 to f3 (FIG. 1). The thickness t of the ball 3 is accurately determined by measuring the amount of movement by the measuring means.

【0023】なお、上記実施例の中では、一個のボール
3を測定対象として説明しているが、一つの画面上に複
数のボールを写し出すようにすれば、一回の動作で複数
のボールの厚さを同時に検査することも可能である。
In the above embodiment, one ball 3 is described as the object to be measured. However, if a plurality of balls are projected on one screen, the number of balls can be measured by one operation. It is also possible to inspect the thickness at the same time.

【0024】[0024]

【発明の効果】以上、説明したように本発明のワイヤボ
ンディングの検査装置によれば、フォーカスレンズを通
して取り込まれたボールの平面画像と予め設定されたボ
ールのコーン部パターン画像とが一致するまでのフォー
カスレンズの移動量を基にボールの厚さを検出すること
により、半導体チップ上の圧着されたボールの厚さを高
精度に測定することが可能となる。これにより、ワイヤ
の圧着強度をより正確に把握することが可能となるた
め、ワイヤボンディング工程における製品の信頼性向上
が期待できる。
As described above, according to the wire bonding inspection apparatus of the present invention, the plane image of the ball taken in through the focus lens and the preset cone image of the ball are matched. By detecting the ball thickness based on the amount of movement of the focus lens, it becomes possible to measure the thickness of the pressure-bonded ball on the semiconductor chip with high accuracy. As a result, it is possible to more accurately grasp the crimping strength of the wire, and it can be expected that the reliability of the product in the wire bonding process is improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係わるワイヤボンディングの検査装置
を説明するための概略構成図である。
FIG. 1 is a schematic configuration diagram for explaining a wire bonding inspection device according to the present invention.

【図2】ワイヤボンディングの動作を説明する模式図で
ある。
FIG. 2 is a schematic diagram illustrating an operation of wire bonding.

【図3】ボンディング後のボールの圧着形状を示す斜視
図である。
FIG. 3 is a perspective view showing a pressure bonding shape of a ball after bonding.

【図4】光学カメラから照射された光の進行方向を説明
する図である。
FIG. 4 is a diagram illustrating a traveling direction of light emitted from an optical camera.

【図5】フォーカスレンズの焦点位置を説明する図であ
る。
FIG. 5 is a diagram illustrating a focus position of a focus lens.

【図6】各焦点位置におけるボールの平面画像を説明す
る図である。
FIG. 6 is a diagram illustrating a plane image of a ball at each focus position.

【符号の説明】[Explanation of symbols]

1 半導体チップ 3 ボール 5 コーン部 7 インナーリード 8 ワイヤ 11 光学カメラ 12 駆動手段 13 計測手段 14 判定手段 15 フォーカスレンズ 1 Semiconductor Chip 3 Ball 5 Cone Part 7 Inner Lead 8 Wire 11 Optical Camera 12 Driving Means 13 Measuring Means 14 Judging Means 15 Focus Lens

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップの上面に形成された電極パ
ッドと前記半導体チップの周辺に配置されたインナーリ
ードとをワイヤにて接続するワイヤボンディングにおい
て、 前記半導体チップの上面に圧着されたボールの厚さを検
査する検査装置であって、 前記半導体チップ上に圧着されたボールの平面画像を取
り込むためのフォーカスレンズを有する光学カメラと、 前記半導体チップの上面と前記光学カメラのフォーカス
レンズとの間に所定の離間距離を設定する設定手段と、 前記半導体チップの上面と直角をなす方向に前記光学カ
メラのフォーカスレンズを移動させるための駆動手段
と、 前記駆動手段による前記フォーカスレンズの移動量を計
測する計測手段と、 前記フォーカスレンズを通して取り込まれたボールの平
面画像が予め設定されたボールのコーン部パターン画像
に一致するかどうかを判定する判定手段とを具備したこ
とを特徴とするワイヤボンディングの検査装置。
1. In wire bonding for connecting an electrode pad formed on an upper surface of a semiconductor chip and an inner lead arranged around the semiconductor chip with a wire, the thickness of a ball pressed onto the upper surface of the semiconductor chip. And an optical camera having a focus lens for capturing a planar image of a ball crimped on the semiconductor chip, between an upper surface of the semiconductor chip and a focus lens of the optical camera. Setting means for setting a predetermined separation distance, driving means for moving the focus lens of the optical camera in a direction perpendicular to the upper surface of the semiconductor chip, and measuring the amount of movement of the focus lens by the driving means. A plane image of the ball captured through the measuring means and the focus lens is preset. A wire bonding inspection device, comprising: a determining means for determining whether or not the image matches a cone portion pattern image of the formed ball.
JP2727893A 1993-01-22 1993-01-22 Inspection equipment for wire bonding Expired - Fee Related JP3259398B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2727893A JP3259398B2 (en) 1993-01-22 1993-01-22 Inspection equipment for wire bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2727893A JP3259398B2 (en) 1993-01-22 1993-01-22 Inspection equipment for wire bonding

Publications (2)

Publication Number Publication Date
JPH06224267A true JPH06224267A (en) 1994-08-12
JP3259398B2 JP3259398B2 (en) 2002-02-25

Family

ID=12216609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2727893A Expired - Fee Related JP3259398B2 (en) 1993-01-22 1993-01-22 Inspection equipment for wire bonding

Country Status (1)

Country Link
JP (1) JP3259398B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7191929B2 (en) 2004-09-02 2007-03-20 Kaijo Corporation Method of measuring thickness of bonded ball in wire bonding
JP2010133717A (en) * 2008-12-02 2010-06-17 Shinko Electric Ind Co Ltd Device and method for inspecting glass sealing part
US7899239B2 (en) 2004-09-30 2011-03-01 Kaijo Corporation Inspection method of bonded status of ball in wire bonding
WO2019124508A1 (en) * 2017-12-20 2019-06-27 株式会社新川 Wire shape inspecting device and wire shape inspecting method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7191929B2 (en) 2004-09-02 2007-03-20 Kaijo Corporation Method of measuring thickness of bonded ball in wire bonding
US7899239B2 (en) 2004-09-30 2011-03-01 Kaijo Corporation Inspection method of bonded status of ball in wire bonding
JP2010133717A (en) * 2008-12-02 2010-06-17 Shinko Electric Ind Co Ltd Device and method for inspecting glass sealing part
WO2019124508A1 (en) * 2017-12-20 2019-06-27 株式会社新川 Wire shape inspecting device and wire shape inspecting method
CN111801545A (en) * 2017-12-20 2020-10-20 株式会社新川 Line shape inspection device and line shape inspection method
JPWO2019124508A1 (en) * 2017-12-20 2020-11-19 株式会社新川 Wire shape inspection device and wire shape inspection method
US11182921B2 (en) 2017-12-20 2021-11-23 Shinkawa Ltd. Wire shape inspecting apparatus and wire shape inspecting method
CN111801545B (en) * 2017-12-20 2022-02-01 株式会社新川 Line shape inspection device and line shape inspection method

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