JPH0621292A - Electronic component - Google Patents

Abstract

PURPOSE:To hinder a crack from advancing to an element part beforehand even if shearing stress concentrates on the corner of the semiconductor pellet covered with glass and a crack occurs. CONSTITUTION:A rectangular semiconductor pellet 11, where an element 6 consisting of P-N junction is made at nearly center, is caught from above and below with slug leads 4. In a DHD type diode, where a circular glass sleeve 5 is set around and fused together by heating with the slug parts 2 for catching the semiconductor pellet 11 of the slug leads 4, high distortion layers 12, which have atomic diameters different from those of the atoms constituting the semiconductor pellet 11, are formed in the arrangement pattern along the periphery of the element part 6 of the semiconductor pellet 11 by ion implantation.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component, and more specifically, a DH in which a rectangular pellet is enclosed in a glass sleeve.
The present invention relates to electronic components such as D-type diodes and resistors.

[0002]

2. Description of the Related Art For example, in a DHD type diode, as shown in FIG. 5, a rectangular semiconductor pellet (1) having a later-described PN junction element portion formed in a substantially central portion is provided with a large-diameter slug portion ( 2) and the slag part (2) and the small diameter lead part (3) coaxially extending from the top and bottom of the slag lead (4) of the Dumet wire, and the semiconductor pellet (1) is sandwiched in the slug part (2). It has a structure in which a circular glass sleeve (5) is externally fitted and heat-welded, and a semiconductor pellet (1) is enclosed in the glass sleeve (5).

The semiconductor pellet (1) has an element portion (6) made of a PN junction formed by impurity diffusion as shown in an enlarged view in FIG. 5, and a guard ring formed by impurity diffusion around the element portion (6). It has a region (7). Then, bump electrodes (8) are formed on the upper surface of the element portion (6) by plating or the like, and back surface electrodes (9) are formed on the lower surface by vapor deposition or sputtering, and both electrodes contact the slug portion (2). Thus, the slag leads (4) are electrically connected. Incidentally, (10) in the figure is an insulating film formed on the upper surface of the semiconductor pellet (1).

[0004]

By the way, in the DHD type diode having the above-mentioned structure, each component of the semiconductor pellet (1), the slag lead (4) and the glass sleeve (5) is made by a dedicated jig as shown in the drawing. It is manufactured by arranging and assembling, and heat-treating it together with the dedicated jig in a conveyor furnace. The heat treatment is performed at a glass softening temperature of about 450 ° C. and a sealing temperature of about 680 ° C.

In this manufacturing process, when the components assembled by the above-mentioned special jig are transported and handled, the semiconductor pellets (1) are turned into glass sleeves (5) as shown in FIG. ) Inside the slug reed (4)
The slag part (2) may be offset from the center position and biased. In this way, when the semiconductor pellet (1) is offset, at least one corner of the rectangular semiconductor pellet (1) is in contact with the inner wall surface of the glass sleeve (5).

When heat-treated under the above-mentioned conditions in this state, the molten glass (a) on the inner wall surface of the glass sleeve (5) covers the corners of the semiconductor pellet (1), and the glass sleeve (5) A part of) is adhered to the semiconductor pellet (1).

When the DHD type diode thus produced is used for power, the semiconductor pellet (1) may generate heat due to absorption of surge current. When this semiconductor pellet (1) is heated, due to the difference in coefficient of thermal expansion between the semiconductor pellet (1) and the glass sleeve (5), shear stress is applied to the corner of the semiconductor pellet (1) covered by the glass (a). Are concentrated and cracks (m) occur. When the crack (m) progresses to the element portion (6) where the PN junction is formed due to the concentration of shear stress,
The spread of this crack (m) causes unstable operation,
In the worst case, there was a problem that the element part (6) was destroyed.

Therefore, the present invention has been proposed in view of the above problems, and even if shear stress concentrates at a corner of a semiconductor pellet covered with glass and a crack is generated, the crack spreads to the element portion. It is to provide an electronic component that can prevent this.

[0009]

As a technical means for achieving the above object, the present invention is to sandwich a rectangular pellet having an element portion made of a PN junction in a substantially central portion from above and below with slag leads. , A circular glass sleeve is externally fitted between the sandwiching ends of the slag leads and heat-welded, and a rectangular pellet is enclosed in the glass sleeve, and along the outer peripheral portion of the element portion of the rectangular pellet. And a high strain layer is formed.

The high strain layer is formed by implanting an impurity composed of atoms having a diameter different from the atoms forming the rectangular pellet, and is formed deeper than the guard ring region of the element portion of the rectangular pellet. Is desirable.

[0011]

In the electronic component according to the present invention, even if the corner of the semiconductor pellet is partially covered by the glass sleeve due to its manufacture, the semiconductor pellet covered by the glass is heated when the semiconductor pellet is heated. The crack generated by the concentration of the shear stress generated in the corner is turned around in the high strain layer and propagates along the high strain layer. As a result, the high strain layer can prevent the crack from spreading to the element portion having the PN junction.

[0012]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An electronic component according to the present invention will be described with reference to an embodiment applied to a DHD type diode with reference to FIGS. It should be noted that the same or corresponding parts as those in FIGS.

The feature of the present invention resides in the semiconductor pellet (11) as shown in FIG. Specifically, the high strain layer (12) is formed on the outer peripheral portion of the element portion (6) of the semiconductor pellet (11), that is, on the element non-forming portion located outside the guard ring region (7). The high strain layer (12) is linearly arranged along the outer periphery of the element part (6) so as to surround the guard ring region (7). The layout pattern is shown in FIG.
As shown in Fig. 3, the semiconductor pellet (11) is formed into a rectangular linear shape so as to be parallel to each side, or as shown in Fig. 3, the semiconductor pellet (11) is obliquely divided so as to partition the corners of the semiconductor pellet (11). You may make it linear.

The high strain layer (12) has a diameter different from the atomic diameter of silicon constituting the semiconductor pellet (11). For example, an n-type impurity such as arsenic or antimony having a large atomic diameter is formed by an ion implantation method. It is formed by doping with the linear arrangement pattern described above. Since the impurity atom having such a large diameter interrupts the silicon atom, a high strain is generated in that portion, so that the crack can be redirected by the high strain layer (12) and guided in an arbitrary direction. . Even if the diameter of the impurity atom is smaller than the diameter of the silicon atom, high strain can be generated in that portion.

Further, in the high strain layer (12), since the cracks may propagate inside the semiconductor pellet (11) as well, the high strain layer (12) is more likely to be removed from the guard ring region (7) disposed on the outer periphery of the element portion (6). It is preferable to form deeper.

In manufacturing the DHD type diode having the above-mentioned structure, as shown in FIG.
1) Heat welding in a state where 1) is offset from the center of the slag part (2) of the slag reed (4) in the glass sleeve (5) and its corners are in contact with the inner wall surface of the glass sleeve (5). By doing so, even if the glass (a) covers the corners of the semiconductor pellet (11) at that portion, when the semiconductor pellet (11) is heated, the semiconductor pellet (11) and the glass sleeve (5) are Due to the difference in the coefficient of thermal expansion of the glass (a), even if shear stress concentrates at the corners of the semiconductor pellet (11) covered by the glass (a) and cracks (m) occur, the concentration of shear stress causes a crack ( Even if m) proceeds to the element portion (6) having the PN junction formed therein, the high strain layer (12) is interposed therebetween, so that the crack (m) is redirected by the high strain layer (12) and Propagate along the high strain layer (12). Since the progress of the crack (m) extends to the element non-forming region, the extension of the crack (m) does not reach the element portion (6).

Although the DHD type diode has been described in the above embodiment, the present invention is not limited to this, and a structure other than the DHD type diode described above is such that a rectangular pellet is enclosed in a glass sleeve. If applicable, it is applicable.

[0018]

According to the electronic component of the present invention, since the high strain layer is formed along the outer peripheral portion of the element portion of the rectangular pellet, the glass sleeve is formed at the corner portion of the rectangular pellet in manufacturing. Even if a part is covered, even if shear stress concentrates at the corner of the rectangular pellet covered by the glass and a crack occurs, the crack can be redirected with a high strain layer. It is possible to prevent cracks from propagating to the element part in advance, which improves reliability and makes it easy to prolong the life of the product, which is of great practical value.

[Brief description of drawings]

FIG. 1 is an electronic component according to the present invention [DHD type diode].
Sectional view showing an embodiment of

FIG. 2 is a plan view showing an example of an arrangement pattern of high strain layers in the semiconductor pellet of FIG.

3 is a plan view showing another example of the arrangement pattern of the high strain layer in the semiconductor pellet of FIG.

FIG. 4 is an enlarged plan view showing a state where a crack has progressed from a corner portion of the semiconductor pellet of FIG. 1 which is covered with glass.

FIG. 5 is a sectional view showing a conventional example of a DHD type diode.

FIG. 6 is an enlarged plan view showing a state in which the semiconductor pellet of FIG. 5 is offset in the glass sleeve, and a crack has progressed from the corner of the glass covered with the semiconductor pellet.

[Explanation of symbols]

 4 Slag lead 5 Glass sleeve 6 Element part 11 Rectangular pellet (semiconductor pellet) 12 High strain layer

Claims (3)

[Claims] 1. A rectangular pellet having a PN junction element portion formed in a substantially central portion is sandwiched by slag leads from above and below, and a circular glass sleeve is externally fitted between the sandwiching ends of the slag leads. An electronic component in which a high strain layer is formed along the outer peripheral portion of the element portion of the rectangular pellet, which is obtained by heating and welding and enclosing the rectangular pellet in the glass sleeve. 2. The electronic component according to claim 1, wherein the high strain layer is formed by implanting an impurity composed of atoms having a diameter different from that of atoms forming the rectangular pellet. 3. An electronic component, wherein the high strain layer according to claim 1 or 2 is formed deeper than a guard ring region of an element portion of a rectangular pellet.