JPH0621272A - Semiconductor - Google Patents

Abstract

PURPOSE:To prevent peeling of a sealing resin from the rear side of a semiconductor and also cracking of the sealing resin by performing resin-sealing with a silicon compound film contained on the rear side of a semiconductor element. CONSTITUTION:While a silicon oxide film 9 is provided on the rear side of a semiconductor element 5, the semiconductor element is electrically connected to a lead frame 6 with a bump 7 in between, and then coated with a sealing resin. By this, the gap between the semiconductor element and the sealing resin is eliminated and, in addition, the silicon compound film improves adhesion, and so, peeling of the sealing resin from the rear side of the semiconductor element or cracking of the plastic sealing resin is prevented.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device which has a semiconductor element and whose surrounding is sealed with a resin.

[0002]

2. Description of the Related Art In recent years, as semiconductor devices have become more multifunctional and smaller, the surface mounting of semiconductor elements has been progressing.

A conventional technique will be described with reference to the drawings. FIG. 4 is a cross-sectional view of a conventional semiconductor device bonded to a lead frame via bumps. Reference numeral 1 is a semiconductor element, 2 is a lead frame, 3 is a bump for electrically connecting the semiconductor element and the lead frame, and 4 is a sealing resin that covers them.

Conventionally, the back surface of the semiconductor element 1 was resin-sealed without any treatment.

[0005]

However, in the above-mentioned conventional semiconductor device, when the semiconductor device is mounted on a printed circuit board, the sealing resin 4 and the semiconductor element 1 are caused by moisture absorbed by the sealing resin 4.
Water vapor pressure is generated between the back surfaces of the sealing resin 4 and the pressure.
There is a phenomenon in which the back surface of the semiconductor element 1 is peeled off or the sealing resin 4 is cracked. Peeling between the sealing resin 4 and the back surface of the semiconductor element 1 or cracking of the sealing resin 4 shortens the lead path through which moisture penetrates into the semiconductor device, resulting in poor moisture resistance reliability.

The present invention is intended to solve the above problems, and an object thereof is to provide a semiconductor device in which peeling between the sealing resin 4 and the back surface of the semiconductor element 1 or cracking of the sealing resin 4 is prevented.

[0007]

In order to solve the above problems, the present invention is characterized in that a silicon compound film typified by a silicon oxide film or a silicon nitride film is formed on the back surface of a semiconductor element.

[0008]

According to the present invention having the above structure, the gap between the semiconductor element and the sealing resin is eliminated, and the adhesion is improved by the silicon compound film. Can be prevented from cracking.

[0009]

Embodiments of the present invention will be described below with reference to FIGS. 1 and 2. 1A and 1B show a semiconductor element and a lead frame electrically joined via a bump, and the surrounding thereof is covered with a sealing resin. 5 is a semiconductor element, 6 is a lead frame, 7 is a bump, and 8 is a seal. Stop resin, 9 is a silicon oxide film. FIG. 2 is a diagram in which a semiconductor element and a lead frame are electrically joined via bumps and the surroundings are covered with a sealing resin. 10 is a semiconductor element, 11 is a lead frame, 12 is a bump, and 13 is a seal. Resin 14 is a silicon nitride film.

Next, as an operation example of the semiconductor device according to the embodiment of the present invention shown in FIGS. 1 and 2, a reliability test result will be shown with reference to FIG.

As shown in FIG. 3, after conducting a forced humidification test on the encapsulating resin as a reliability test under severe conditions, even if the encapsulating resin is immersed in high temperature solder, the back surfaces of the semiconductor elements 5, 10 and the encapsulating resin 8, There is no peeling between 13 and cracking of the resins 8 and 13.

The silicon oxide film 9 and the silicon nitride film 14 can be formed by vapor deposition.

[0013]

As is apparent from the above embodiments, according to the present invention, when a semiconductor element is mounted on a printed circuit board,
It is possible to realize a semiconductor device without peeling between the back surface of the semiconductor element and the sealing resin or cracking of the sealing resin.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a semiconductor device having a silicon oxide film deposited on the back surface of a silicon substrate according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view of a semiconductor device having a silicon nitride film deposited on the back surface of a silicon substrate according to an embodiment of the present invention.

FIG. 3 is a diagram showing a result when a reliability test is performed on a semiconductor device according to an example of the present invention.

FIG. 4 is a sectional view of a conventional semiconductor device.

[Explanation of symbols]

 1, 5, 10 Semiconductor element 2, 6, 11 Lead frame 3, 7, 12 Bump 4, 8, 13 Sealing resin 9 Silicon oxide film 14 Silicon nitride film

Claims (3)

[Claims] 1. A semiconductor device characterized by being resin-sealed with a silicon compound film on the back surface of a semiconductor element. 2. The semiconductor device according to claim 1, wherein the silicon compound film is a silicon oxide film. 3. The semiconductor device according to claim 1, wherein the silicon compound film is a silicon nitride film.