JPH06207082A - Resin composition for semiconductor sealing and semiconductor device sealed therewith - Google Patents

Resin composition for semiconductor sealing and semiconductor device sealed therewith

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Publication number
JPH06207082A
JPH06207082A JP1932193A JP1932193A JPH06207082A JP H06207082 A JPH06207082 A JP H06207082A JP 1932193 A JP1932193 A JP 1932193A JP 1932193 A JP1932193 A JP 1932193A JP H06207082 A JPH06207082 A JP H06207082A
Authority
JP
Japan
Prior art keywords
epoxy resin
resin composition
resin
semiconductor
curing agent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1932193A
Other languages
Japanese (ja)
Other versions
JP2595868B2 (en
Inventor
Toshio Shiobara
利夫 塩原
Kazutoshi Tomiyoshi
和俊 富吉
Takayuki Aoki
貴之 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP1932193A priority Critical patent/JP2595868B2/en
Publication of JPH06207082A publication Critical patent/JPH06207082A/en
Application granted granted Critical
Publication of JP2595868B2 publication Critical patent/JP2595868B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To obtain a resin composition for semiconductor sealing excellent in mold release, stampability and humidity resistance by mixing an epoxy resin with a curing agent and a specified fluorinated higher fatty acid ester. CONSTITUTION:100 pts.wt. total of an epoxy, resin of a total chlorine content of 500ppm or below and a curing agent in an amount to give a ratio of the number of equivalents of the epoxy groups of the epoxy resin to the number of equivalents of the OH groups of the curing agent of 0.5-2.0 is mixed with 0.01-10 pts.wt. fluorinated higher fatty acid ester of formula I (wherein R is a group of formula II or III; p is 4-16; r is 4-60; and q is 1-5) and 100-1000 pts.wt. inorganic filler of a mean particle diameter of 3-15mum, and the resulting mixture is kneaded at 70-95 deg.C to obtain the objective composition.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、特に耐湿性等の信頼性
が優れた硬化物を与えることができる上、成形時におい
て離型性が良好で、成形品への捺印性も良好な半導体封
止用樹脂組成物及び該組成物で封止された半導体装置に
関する。
BACKGROUND OF THE INVENTION The present invention is a semiconductor which can provide a cured product having excellent reliability such as moisture resistance, has good releasability at the time of molding, and has good imprintability on a molded product. The present invention relates to a resin composition for encapsulation and a semiconductor device encapsulated with the composition.

【0002】[0002]

【従来の技術及び発明が解決しようとする課題】現在、
半導体産業の中では樹脂封止型のダイオード、トランジ
スター、IC、LSI、超LSIが主流となっており、
なかでもエポキシ樹脂、硬化剤及びこれに各種添加剤を
配合したエポキシ樹脂組成物は、一般に他の熱硬化性樹
脂に比べて成形性、接着性、電気特性、機械的特性、耐
湿性等に優れているため、エポキシ樹脂組成物で半導体
装置を封止することが多く行われている。しかし、最近
においてはこれらの半導体装置は集積度が益々大きくな
り、それに応じてチップ寸法も大きくなりつつある。一
方、これに対してパッケージ外形寸法は電子機器の小型
化、軽量化の要求にともない、小型化、薄型化が進んで
いる。さらに半導体部品を回路基板へ取り付ける方法
も、基板上の部品の高密度化のため半導体部品の表面実
装がよく行われるようになってきた。
2. Description of the Related Art Currently,
In the semiconductor industry, resin-sealed diodes, transistors, ICs, LSIs, VLSIs are the mainstream,
Above all, the epoxy resin, the curing agent, and the epoxy resin composition containing various additives are generally superior to other thermosetting resins in moldability, adhesiveness, electrical properties, mechanical properties, moisture resistance, etc. Therefore, a semiconductor device is often sealed with an epoxy resin composition. However, in recent years, the integration degree of these semiconductor devices has become larger and larger, and the chip size has been increasing accordingly. On the other hand, the external dimensions of the package are becoming smaller and thinner along with the demand for smaller and lighter electronic devices. Further, also in the method of mounting the semiconductor component on the circuit board, the surface mounting of the semiconductor component has been often performed in order to increase the density of the component on the board.

【0003】しかしながら、半導体装置を表面実装する
場合、半導体装置全体を半田槽に浸漬するか又は半田が
溶融する高温ゾーンを通過させる方法が一般的である
が、その際の熱衝撃により封止樹脂層にクラックが発生
したり、リードフレームやチップと封止樹脂との界面に
剥離が生じたりする。このようなクラックや剥離は、表
面実装時の熱衝撃以前に半導体装置の封止樹脂層が吸湿
していると更に顕著なものとなるが、実際の作業工程に
おいては、封止樹脂層の吸湿は避けられず、このため実
装後のエポキシ樹脂で封止した半導体装置の信頼性が大
きく損なわれる場合がある。このため、封止樹脂の信頼
性を更に向上させることが望ましい。
However, when the semiconductor device is surface-mounted, it is common to immerse the entire semiconductor device in a solder bath or pass through a high temperature zone where the solder melts. A crack may occur in the layer, or peeling may occur at the interface between the lead frame or chip and the sealing resin. Such cracks and peeling become more noticeable if the sealing resin layer of the semiconductor device absorbs moisture before the thermal shock during surface mounting, but in the actual working process, the moisture absorption of the sealing resin layer Inevitably, the reliability of the semiconductor device sealed with the epoxy resin after mounting may be greatly impaired. Therefore, it is desirable to further improve the reliability of the sealing resin.

【0004】このような問題を解決するため、従来より
使用されているオルソクレゾールノボラック型エポキシ
樹脂に替わって、ナフタレン骨格或いはビフェニール骨
格を有するエポキシ樹脂が低吸水性、強靭性といった特
徴を有しているため注目されてきている(特開昭61−
47725号、特開昭4−211422号公報)。
In order to solve such a problem, an epoxy resin having a naphthalene skeleton or a biphenyl skeleton has characteristics of low water absorption and toughness in place of the conventionally used orthocresol novolac type epoxy resin. Therefore, it has been attracting attention (Japanese Patent Application Laid-Open No. 61-
47725, JP-A-4-21142).

【0005】しかしながら、上述したような骨格を有す
るエポキシ樹脂を使用した場合、成形時の離型性が不十
分であるといった問題があり、また捺印性にも問題があ
った。そのため、従来からカルナバワックスのような長
鎖脂肪酸のエステル系ワックス、エチレンビスステアリ
ン酸アミドのようなビスアミド系ワックス等の内部離型
剤を配合することがよく行われているが、これら従来の
内部離型剤は、いずれも耐湿性といった信頼性、離型
性、捺印性という特性を全て満足するものではなかっ
た。
However, when the epoxy resin having the above-mentioned skeleton is used, there is a problem that the releasability at the time of molding is insufficient, and there is also a problem with the imprintability. For this reason, it has been customary to mix an internal release agent such as an ester wax of a long chain fatty acid such as carnauba wax and a bisamide wax such as ethylenebisstearic acid amide. None of the release agents satisfied the characteristics such as reliability such as moisture resistance, releasability and imprintability.

【0006】本発明は上記事情に鑑みなされたもので、
成型時の離型性及び成型品への捺印性に優れ、かつ耐湿
性にも優れる硬化物を与える半導体封止用樹脂組成物及
び半導体装置を提供することを目的とする。
The present invention has been made in view of the above circumstances.
An object of the present invention is to provide a resin composition for semiconductor encapsulation and a semiconductor device which provide a cured product having excellent releasability at the time of molding and imprintability on a molded product and excellent moisture resistance.

【0007】[0007]

【課題を解決するための手段及び作用】本発明者は上記
目的を達成するため鋭意検討を行った結果、エポキシ樹
脂と硬化剤とを含有する樹脂組成物に、内部離型剤とし
て下記一般式(1)で示されるフッ素原子含有高級脂肪
酸エステルを配合することにより、エポキシ樹脂として
ナフタレン環骨格やビフェニル骨格を有するエポキシ樹
脂を使用した場合にも、成型時の離型性に優れ、成形物
への捺印性も良好であると共に、耐湿性にも優れた硬化
物を与える樹脂組成物が得られることを知見し、本発明
をなすに至ったものである。
Means and Actions for Solving the Problems As a result of intensive studies to achieve the above object, the present inventor has found that a resin composition containing an epoxy resin and a curing agent has the following general formula as an internal release agent. By blending the fluorine atom-containing higher fatty acid ester represented by (1), even when an epoxy resin having a naphthalene ring skeleton or a biphenyl skeleton is used as the epoxy resin, excellent releasability at the time of molding, and a molded product It was found that a resin composition that gives a cured product having excellent imprintability and excellent moisture resistance can be obtained, and the present invention has been completed.

【0008】従って、本発明は、(A)エポキシ樹脂と
(B)硬化剤とを含有する半導体封止用樹脂組成物に、
(C)下記一般式(1)
Therefore, the present invention provides a resin composition for semiconductor encapsulation containing (A) epoxy resin and (B) curing agent,
(C) The following general formula (1)

【0009】[0009]

【化3】 で表わされるフッ素原子含有高級脂肪酸エステルを配合
してなることを特徴とする半導体封止用樹脂組成物及び
該組成物の硬化物で封止された半導体装置を提供する。
[Chemical 3] The present invention provides a resin composition for semiconductor encapsulation, comprising a fluorine atom-containing higher fatty acid ester represented by and a semiconductor device encapsulated with a cured product of the composition.

【0010】以下、本発明を更に詳しく説明すると、本
発明の半導体封止用樹脂組成物において、(A)成分の
エポキシ樹脂としては、ノボラック型エポキシ樹脂、ビ
フェノールA型エポキシ樹脂、トリフェノールアルカン
型エポキシ樹脂、下記一般式(2)で示されるナフタレ
ン環含有エポキシ樹脂、下記一般式(3)で示されるビ
フェニル型エポキシ樹脂等が例示される。
The present invention will be described in more detail below. In the resin composition for semiconductor encapsulation of the present invention, the epoxy resin as the component (A) is a novolac type epoxy resin, a biphenol A type epoxy resin or a triphenol alkane type epoxy resin. Examples thereof include an epoxy resin, a naphthalene ring-containing epoxy resin represented by the following general formula (2), and a biphenyl type epoxy resin represented by the following general formula (3).

【0011】[0011]

【化4】 [Chemical 4]

【0012】なお、上記式(2)のナフタレン環含有エ
ポキシ樹脂としては、下記のものが例示される。
Examples of the naphthalene ring-containing epoxy resin of the above formula (2) include the following.

【0013】[0013]

【化5】 [Chemical 5]

【0014】[0014]

【化6】 [Chemical 6]

【0015】また、式(3)のビフェニル型エポキシ樹
脂としては下記のものが例示される。
Examples of the biphenyl type epoxy resin of the formula (3) are shown below.

【0016】[0016]

【化7】 [Chemical 7]

【0017】なお、これらのビフェニル基含有エポキシ
樹脂中では、エポキシ樹脂組成物を低粘度に維持し、か
つエポキシ樹脂組成物中の全塩素量を500ppm以下
とすることを考慮すると、上記式(4)で示される化合
物が好ましい。
In these biphenyl group-containing epoxy resins, considering that the epoxy resin composition is maintained at a low viscosity and the total chlorine content in the epoxy resin composition is 500 ppm or less, the above formula (4) The compound shown by these is preferable.

【0018】次に、本発明の(B)成分である硬化剤と
しては、フェノール系硬化剤、アミン系硬化剤、酸無水
物系硬化剤が例示され、特にはフェノール系硬化剤を使
用することが好ましい。なお、このフェノール系硬化剤
は、特に限定されるものではないが、好ましくはフェノ
ールノボラック樹脂、トリフェノールアルカン型樹脂、
フェニルアラルキル樹脂、ナフタレン含有樹脂等が挙げ
られる。具体的には、以下に示す化合物が挙げられる。
Next, examples of the curing agent which is the component (B) of the present invention include phenol type curing agents, amine type curing agents, and acid anhydride type curing agents. Particularly, phenol type curing agents should be used. Is preferred. The phenol-based curing agent is not particularly limited, but preferably phenol novolac resin, triphenol alkane type resin,
Examples thereof include phenylaralkyl resin and naphthalene-containing resin. Specifically, the following compounds may be mentioned.

【0019】[0019]

【化8】 [Chemical 8]

【0020】[0020]

【化9】 (但し、上記式中R4は水素原子、ハロゲン又は炭素数
1〜5のアルキル基、gは0〜5の整数を示す。)
[Chemical 9] (However, in the above formula, R 4 represents a hydrogen atom, a halogen or an alkyl group having 1 to 5 carbon atoms, and g represents an integer of 0 to 5.)

【0021】上記(B)成分の硬化剤の配合量は硬化剤
の種類に応じ適宜選定されるが、エポキシ樹脂のエポキ
シ当量と硬化剤のOH当量の比が0.5〜2.0である
ことが好ましい。
The blending amount of the curing agent as the component (B) is appropriately selected according to the type of the curing agent, and the ratio of the epoxy equivalent of the epoxy resin to the OH equivalent of the curing agent is 0.5 to 2.0. It is preferable.

【0022】次いで、本発明の樹脂組成物を構成する
(C)成分であるフッ素原子含有高級脂肪酸エステルは
下記式(1)で示されるものであり、成形時における内
部離型剤として使用するものである。
Next, the fluorine atom-containing higher fatty acid ester which is the component (C) constituting the resin composition of the present invention is represented by the following formula (1), and is used as an internal mold release agent at the time of molding. Is.

【0023】[0023]

【化10】 [Chemical 10]

【0024】上記式(1)で示される化合物の具体例と
しては、下記に示すものを挙げることができる。
Specific examples of the compound represented by the above formula (1) include those shown below.

【0025】[0025]

【化11】 [Chemical 11]

【0026】ここで、上記(C)成分の添加量は、
(A)成分と(B)成分の合計量100部(重量部、以
下同様)に対して0.01〜10部、特に0.1〜5部
を添加することが好ましい。添加量が0.01部未満の
場合は離型性の向上効果が十分でなく、10部を超える
場合には機械強度の低下等の問題が発生する場合があ
る。また、本発明にかかる(C)成分は他の離型剤、例
えばカルナバワックス等と併用することは何ら差し支え
ない。
Here, the addition amount of the component (C) is
It is preferable to add 0.01 to 10 parts, especially 0.1 to 5 parts to 100 parts (parts by weight, the same applies hereinafter) of the total amount of the components (A) and (B). When the addition amount is less than 0.01 part, the effect of improving the releasability is not sufficient, and when it exceeds 10 parts, problems such as a decrease in mechanical strength may occur. Further, the component (C) according to the present invention may be used in combination with other releasing agents such as carnauba wax.

【0027】本発明では、上記成分に加え、必要に応じ
て無機質充填剤を添加することが膨張係数及び吸水量の
低減という点から好ましい。この無機質充填剤として
は、通常エポキシ樹脂組成物に配合されるものを使用す
ることができる。具体的には、溶融シリカ、結晶性シリ
カなどのシリカ類、アルミナ、窒化珪素、窒化アルミ、
ボロンナイトライド、酸化チタン、ガラス繊維等が挙げ
られる。これらの中でも特に溶融シリカが望ましく、そ
の平均粒径は3〜15ミクロンのものが成形性の面から
望ましい。なお、無機質充填剤は、樹脂と無機質充填剤
表面の結合強度を強くするため、予めシランカップリン
グ剤などで表面処理したものを配合することが好まし
い。
In the present invention, it is preferable to add an inorganic filler, if necessary, in addition to the above components, from the viewpoint of reducing the expansion coefficient and water absorption. As the inorganic filler, those which are usually blended with the epoxy resin composition can be used. Specifically, fused silica, silicas such as crystalline silica, alumina, silicon nitride, aluminum nitride,
Examples thereof include boron nitride, titanium oxide, glass fiber and the like. Of these, fused silica is particularly desirable, and one having an average particle size of 3 to 15 microns is desirable from the viewpoint of moldability. It should be noted that the inorganic filler is preferably blended with a surface-treated in advance with a silane coupling agent or the like in order to increase the bonding strength between the resin and the surface of the inorganic filler.

【0028】これら無機質充填剤はその1種を単独で使
用でき、或いは2種以上を併用してもよく、その配合量
は特に制限されないが、(A),(B)成分の合計量1
00部に対し100〜1000部、特に200〜700
部の範囲とすることが好ましい。
These inorganic fillers may be used alone or in combination of two or more, and the compounding amount is not particularly limited, but the total amount of the components (A) and (B) is 1
100 to 1000 parts, especially 200 to 700 parts per 00 parts
It is preferably within the range of parts.

【0029】更に、本発明の半導体封止用樹脂組成物に
は、硬化触媒を配合することができ、その硬化触媒とし
てはイミダゾール化合物、三級アミン化合物、リン系化
合物等が例示される。その配合量としては特に制限され
ないが、(A),(B)成分の合計量100部に対して
0.1〜2部、特に0.4〜1.5部とすることが好ま
しい。
Further, a curing catalyst can be added to the resin composition for semiconductor encapsulation of the present invention, and examples of the curing catalyst include imidazole compounds, tertiary amine compounds and phosphorus compounds. The blending amount thereof is not particularly limited, but it is preferably 0.1 to 2 parts, particularly 0.4 to 1.5 parts based on 100 parts of the total amount of the components (A) and (B).

【0030】本発明の組成物には、更に必要に応じて各
種の添加剤を配合することができ、例えば熱可塑性樹
脂、熱可塑性エラストマー、有機合成ゴム、シリコーン
系等の低応力剤、ステアリン酸等の脂肪酸及びその金属
塩、カーボンブラック、コバルトブルー、ベンガラ等の
顔料、酸化アンチモン、ハロゲン化合物等の難燃化剤、
グリシドキシプロピルトリメトキシシラン等のシランカ
ップリング剤、アルキルチタネート類等の表面処理剤、
老化防止剤、ハロゲントラップ剤等の添加剤を配合する
ことができる。
The composition of the present invention may further contain various additives, if desired, such as thermoplastic resins, thermoplastic elastomers, organic synthetic rubbers, low stress agents such as silicones, stearic acid. Such as fatty acids and their metal salts, pigments such as carbon black, cobalt blue, red iron oxide, antimony oxide, flame retardants such as halogen compounds,
Silane coupling agents such as glycidoxypropyltrimethoxysilane, surface treatment agents such as alkyl titanates,
Additives such as an anti-aging agent and a halogen trap agent can be added.

【0031】ここで、本発明の樹脂組成物は、その製造
に際して上述した部分の所定量を均一に撹拌、混合し、
予め70〜95℃に加熱してあるニーダー、ロール、エ
クストルーダーなどで混練、冷却し、粉砕するなどの方
法で得ることができる。なお、成分の配合順序に特に制
限はない。
Here, in the resin composition of the present invention, a predetermined amount of the above-mentioned portion is uniformly stirred and mixed in the production thereof,
It can be obtained by a method such as kneading with a kneader, roll, extruder or the like which has been heated to 70 to 95 ° C. in advance, cooling and pulverizing. There is no particular limitation on the order of mixing the components.

【0032】このようにして得られた本発明の半導体封
止用樹脂組成物は、SOP、SOJ、TSOP、TQF
Pなどの半導体装置の封止用に有効に使用でき、この場
合、成形は従来より採用されている成形法、例えばトラ
ンスファー成形、インジェクション成形、注型法などを
採用して行うことができる。なお、このときの成形温度
は150〜180℃で30〜180秒、ポストキュアー
は150〜180℃で2〜16時間行うことが望まし
い。
The thus obtained resin composition for semiconductor encapsulation of the present invention contains SOP, SOJ, TSOP and TQF.
It can be effectively used for encapsulating a semiconductor device such as P. In this case, molding can be performed by adopting a conventionally used molding method such as transfer molding, injection molding, or casting method. At this time, the molding temperature is preferably 150 to 180 ° C. for 30 to 180 seconds, and the post cure is preferably 150 to 180 ° C. for 2 to 16 hours.

【0033】[0033]

【発明の効果】本発明の半導体封止用樹脂組成物は、耐
湿性に優れた硬化物を与え、かつ成形時の離型性、成形
物への捺印性に優れ、半導体封止用として有用なもので
あり、この組成物の硬化物で封止された半導体装置は信
頼性の高いものである。
EFFECT OF THE INVENTION The resin composition for semiconductor encapsulation of the present invention provides a cured product having excellent moisture resistance, and has excellent mold releasability during molding and imprintability on a molded product, and is useful for semiconductor encapsulation. The semiconductor device encapsulated with the cured product of this composition has high reliability.

【0034】[0034]

【実施例】以下、実施例及び比較例を示し、本発明を具
体的に説明するが、本発明は下記実施例に制限されるも
のではない。なお、以下の例において部はいずれも重量
部である。
EXAMPLES The present invention will be specifically described below by showing Examples and Comparative Examples, but the present invention is not limited to the following Examples. In the following examples, all parts are parts by weight.

【0035】[実施例1〜10,比較例1〜4]エポキ
シ樹脂、フェノール樹脂及び離型剤を表1,2に示す組
成で加え、これらに更に下記に示す硬化触媒0.6部、
トリフェニルホスフィン0.7部、平均粒径15ミクロ
ンの溶融球状シリカ600部、平均粒径1ミクロンの溶
融球状シリカ100部、三酸化アンチモン8部、カーボ
ンブラック1.5部及びγ−グリシドキシプロピルトリ
メトキシシラン1.5部を加えて得られた組成物を混合
し、熱ロールで90℃/3分間混練し、エポキシ樹脂組
成物を得た。硬化触媒 1,8−ジアザビシクロ(5.4.0)ウンデセン−7
とフェノールノボラック樹脂(TD2131、大日本イ
ンキ社製)とを20/80(重量比)の割合で使用し、
これらを130℃で30分間加熱溶融混合した後、50
ミクロン以下に粉砕したもの。
[Examples 1 to 10 and Comparative Examples 1 to 4] Epoxy resins, phenol resins and mold release agents were added in the compositions shown in Tables 1 and 2, and 0.6 parts of a curing catalyst shown below was further added thereto
0.7 parts triphenylphosphine, 600 parts fused spherical silica having an average particle size of 15 microns, 100 parts fused spherical silica having an average particle size of 1 micron, 8 parts antimony trioxide, 1.5 parts carbon black and γ-glycidoxy The composition obtained by adding 1.5 parts of propyltrimethoxysilane was mixed and kneaded with a hot roll at 90 ° C. for 3 minutes to obtain an epoxy resin composition. Curing catalyst 1,8-diazabicyclo (5.4.0) undecene-7
And phenol novolac resin (TD2131, manufactured by Dainippon Ink and Chemicals) in a ratio of 20/80 (weight ratio),
After heat-melting and mixing these at 130 ° C. for 30 minutes, 50
Grinded to micron or less.

【0036】次に、実施例及び比較例で得られた組成物
を用いて、80pinQFP(14×20×2.7m
m)をトランスファー成形機により圧力70kg/cm
2、金型温度175℃、2分の条件で成形品を成形し、
更に180℃で4時間ポストキュアーを行い、以下の
(イ)〜(ホ)の諸特性を測定した。結果を表1,2に
併記する。 (イ)離型性 金型をオープン直後、金型スプール部をプッシュプルゲ
ージで押し、金型から離れる時の力を測定した。 (ロ)捺印性 得られたIC封止物表面にシルバーインク(馬場印房製
ボンマークC)で捺印し、150℃で1時間インクキ
ュアーを行った後セロテープで引き剥しテストを実施
し、少しでも文字の欠落のある場合は不良とした。 (ハ)信頼性 得られたIC封止物についてプレッシャークッカーテス
ト(PCT:121℃水蒸気、2気圧)を行い、アルミ
配線の腐蝕を調べた。アルミニウム腐蝕によるオープン
発生を検出し、初期不良発生時間で表現した。 (ニ)吸湿後の耐半田クラック性 得られたIC封止物を85℃/85%RHの雰囲気に1
68時間放置した後、215℃VPSを30秒間行い、
パッケージクラック数を測定した。 (ホ)吸水率 成形条件175℃、70kg/cm2、成形時間2分で
成形し、180℃で4時間ポストキュアーした直径50
mm、厚さ2mmの円板を121℃/100%RHの雰
囲気に24時間放置し、吸水率を測定した。結果を表
1,2に示した。
Next, using the compositions obtained in Examples and Comparative Examples, 80 pin QFP (14 × 20 × 2.7 m)
m) with a transfer molding machine at a pressure of 70 kg / cm
2 , mold the molded product under the condition that the mold temperature is 175 ℃, 2 minutes,
Further, post-curing was performed at 180 ° C. for 4 hours, and the following various characteristics (a) to (e) were measured. The results are also shown in Tables 1 and 2. (B) Releasing property Immediately after opening the mold, the mold spool was pushed with a push-pull gauge to measure the force when the mold was released. (B) Imprintability The surface of the obtained IC-encapsulated product was imprinted with silver ink (Bonmark C manufactured by Baba Inbo), ink-cured at 150 ° C for 1 hour, and then peeled off with a cellophane tape, even if a little. If there was a missing character, it was judged as bad. (C) Reliability A pressure cooker test (PCT: 121 ° C. steam, 2 atm) was performed on the obtained IC-sealed product to examine the corrosion of the aluminum wiring. The occurrence of open due to aluminum corrosion was detected and expressed as the time of initial failure occurrence. (D) Solder crack resistance after moisture absorption The obtained IC-sealed product was exposed to an atmosphere of 85 ° C / 85% RH for 1
After standing for 68 hours, perform 215 ° C VPS for 30 seconds,
The number of package cracks was measured. (E) Water absorption rate Molding conditions: 175 ° C., 70 kg / cm 2 , molding time: 2 minutes, post-curing at 180 ° C. for 4 hours Diameter 50
A disc having a thickness of 2 mm and a thickness of 2 mm was left in an atmosphere of 121 ° C./100% RH for 24 hours to measure the water absorption. The results are shown in Tables 1 and 2.

【0037】[0037]

【表1】 [Table 1]

【0038】[0038]

【表2】 [Table 2]

【0039】[0039]

【化12】 [Chemical 12]

【0040】[0040]

【化13】 [Chemical 13]

【0041】[0041]

【化14】 [Chemical 14]

【0042】表1,2の結果より、本発明にかかる離型
剤を配合したエポキシ樹脂組成物(実施例)は、他の離
型剤を配合したもの(比較例)に比べて離型性、捺印
性、信頼性及び吸湿後の耐半田クラック性に優れている
ことが確認された。
From the results shown in Tables 1 and 2, the epoxy resin composition containing the mold releasing agent of the present invention (Example) has releasability as compared with those containing other mold releasing agents (Comparative Example). It was confirmed that the marking property, the reliability, and the solder crack resistance after moisture absorption were excellent.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 青木 貴之 群馬県碓氷郡松井田町大字人見1番地10 信越化学工業株式会社シリコーン電子材料 技術研究所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takayuki Aoki 1 Hitomi, Otomi, Matsuida-cho, Usui-gun, Gunma 10 Shin-Etsu Chemical Co., Ltd. Silicone Electronic Materials Research Laboratory

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 (A)エポキシ樹脂と(B)硬化剤とを
含有する半導体封止用樹脂組成物に、(C)下記一般式
(1) 【化1】 で表わされるフッ素原子含有高級脂肪酸エステルを配合
してなることを特徴とする半導体封止用樹脂組成物。
1. A resin composition for semiconductor encapsulation containing (A) an epoxy resin and (B) a curing agent, wherein (C) the following general formula (1): A resin composition for semiconductor encapsulation, comprising a fluorine atom-containing higher fatty acid ester represented by
【請求項2】 (A)成分のエポキシ樹脂が、下記一般
式(2)で示されるナフタレン環含有エポキシ樹脂又は
下記一般式(3)で示されるビフェニル型エポキシ樹脂
を含有する請求項1記載の組成物。 【化2】
2. The naphthalene ring-containing epoxy resin represented by the following general formula (2) or the biphenyl type epoxy resin represented by the following general formula (3) is used as the component (A) epoxy resin. Composition. [Chemical 2]
【請求項3】 請求項1又は2の組成物の硬化物で封止
された半導体装置。
3. A semiconductor device encapsulated with the cured product of the composition according to claim 1.
JP1932193A 1993-01-11 1993-01-11 Resin composition for semiconductor encapsulation and semiconductor device Expired - Lifetime JP2595868B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1932193A JP2595868B2 (en) 1993-01-11 1993-01-11 Resin composition for semiconductor encapsulation and semiconductor device

Publications (2)

Publication Number Publication Date
JPH06207082A true JPH06207082A (en) 1994-07-26
JP2595868B2 JP2595868B2 (en) 1997-04-02

Family

ID=11996147

Family Applications (1)

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Country Link
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