JPH06201602A - Inspection of phase shift mask - Google Patents
Inspection of phase shift maskInfo
- Publication number
- JPH06201602A JPH06201602A JP24666793A JP24666793A JPH06201602A JP H06201602 A JPH06201602 A JP H06201602A JP 24666793 A JP24666793 A JP 24666793A JP 24666793 A JP24666793 A JP 24666793A JP H06201602 A JPH06201602 A JP H06201602A
- Authority
- JP
- Japan
- Prior art keywords
- phase
- wavelength
- equation
- phase shift
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007689 inspection Methods 0.000 title claims abstract description 14
- 230000010363 phase shift Effects 0.000 title claims description 35
- 238000000034 method Methods 0.000 claims description 18
- 238000000206 photolithography Methods 0.000 claims description 3
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 238000005286 illumination Methods 0.000 abstract description 2
- 230000001179 pupillary effect Effects 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 10
- 238000003384 imaging method Methods 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 238000002135 phase contrast microscopy Methods 0.000 description 2
- 210000001747 pupil Anatomy 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000011158 quantitative evaluation Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B21/00—Microscopes
- G02B21/06—Means for illuminating specimens
- G02B21/08—Condensers
- G02B21/14—Condensers affording illumination for phase-contrast observation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/50—Optics for phase object visualisation
- G02B27/52—Phase contrast optics
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Microscoopes, Condenser (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明はフォトリソグラフィ用の
移相マスクを検査する方法に関し、より詳しくは検査に
よって位相エラーを改善することに関する。FIELD OF THE INVENTION The present invention relates to a method of inspecting a phase shift mask for photolithography, and more particularly to improving phase error by inspection.
【０００２】[0002]
【従来の技術】Ｂ．Ｊ．リン(Lin)の発表Proceedings o
f the 10th Annual Symposium on Microlithography, p
p.54-79, SPIE, Vol.1496(1990年9月)に記載されている
ように、移相マスク技術を用いると、光学撮像システム
の撮像性能が改善されることがわかっている。しかし、
製造への適用を容易にするにはいくつかの問題を克服し
なければならない。重要な問題の１つは、パターン化ま
たは移相（位相ずれともいう）のエラーについて移相マ
スク（ＰＳＭ）を検査することである。横方向の多くの
移相エラーは、境界が存在するから、従来型の強度マス
ク用の既存の検査機器を使って容易に検査できるが、位
相エラーは検査が難しい。原則として、Ｍ．ボーン(Bor
n)及びＥ．ウルフ(Wolf)の論文"Principles of Optic
s", PergamonPress, 3rd Ed., pp.300, 424(1964年)に
記載されている位相差顕微鏡技術では、位相変化を強度
分配に変換して、定量的評価を可能にする。B. Background Art J. Announced by Lin Proceedings o
f the 10th Annual Symposium on Microlithography, p
It has been found that the use of phase shift mask techniques improves the imaging performance of optical imaging systems, as described in p.54-79, SPIE, Vol.1496 (September 1990). But,
Several problems must be overcome to facilitate manufacturing applications. One of the key issues is inspecting the phase shift mask (PSM) for patterning or phase shift (also called phase shift) errors. Many lateral phase shift errors are easily inspected using existing inspection equipment for conventional intensity masks due to the boundaries, but phase errors are difficult to inspect. In principle, M. Bor
n) and E. Wolf's Paper "Principles of Optic
The phase contrast microscopy technique described in s ", PergamonPress, 3rd Ed., pp.300, 424 (1964) converts phase changes into intensity distributions to enable quantitative evaluation.
【０００３】[0003]
【発明が解決しようとする課題】大部分の移相マスク
は、撮像の改善を最大にするためにπ位相ずれを必要と
するが、π位相ずれは位相エラー検出に最適の位相ずれ
ではない。Most phase shift masks require a π phase shift to maximize imaging improvement, but the π phase shift is not the optimum phase shift for phase error detection.
【０００４】[0004]
【課題を解決するための手段】本発明は、０次光又は基
準光をθだけ移相させることのできる調節可能な移相器
を使用することからなる、位相エラーの改善により、フ
ォトリソグラフィ用移相マスクを検査する方法を提供す
るものである。本発明においては、位相差法又は干渉法
を使う。本発明者は、本発明の方法を使用することによ
り、位相エラー検出に所定の最適波長を使用できること
を発見した。さらに本発明によれば、波長を変更する必
要はないが、所与の位相ずれ角を検査するために最適の
検査用位相ずれ角が使用できる。本発明の方法は、ウェ
ハ上の移相マスクを露光するのに使用する波長と同じ又
は異なる所望の波長を使用する。検査用波長は調節可能
である。θは最適化されて固定される。波長又はθある
いはその両方は、下記の方程式７及び８によって最適化
され、SUMMARY OF THE INVENTION The present invention provides an improved phase error for photolithography by using an adjustable phase shifter capable of shifting the 0th order light or reference light by θ. A method of inspecting a phase shift mask is provided. In the present invention, the phase difference method or the interference method is used. The inventor has discovered that by using the method of the invention, a predetermined optimum wavelength can be used for phase error detection. Furthermore, according to the present invention, it is not necessary to change the wavelength, but the optimum inspection phase shift angle can be used for inspecting a given phase shift angle. The method of the present invention uses a desired wavelength that is the same as or different from the wavelength used to expose the phase shift mask on the wafer. The inspection wavelength is adjustable. θ is optimized and fixed. Wavelength and / or θ are optimized by equations 7 and 8 below,
【数７】 [Equation 7]
【数８】θoptimum＝２φ−（１±２ｍ）π 新しい波長λ'が下記の方程式９に従って選ばれる。Θoptimum = 2φ− (1 ± 2m) π A new wavelength λ ′ is selected according to equation 9 below.
【数９】 また、下記の方程式１０、１１、１２によって最適化さ
れてもよい。[Equation 9] It may also be optimized by the following equations 10, 11, 12.
【数１０】 [Equation 10]
【数１１】θoptimum＝２φ−（１±２ｍ）π[Equation 11] θoptimum = 2φ− (1 ± 2m) π
【数１２】θoptimum＝φ＋（２ｍ−１）π／２[Equation 12] θoptimum = φ + (2m−1) π / 2
【０００５】[0005]
【実施例】本発明は、よりよい検査のための位相エラー
改善技術を提供する。位相エラーの感度が改善されて、
移相マスクを検査する際のエラーの検出が容易になる。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a phase error correction technique for better inspection. Improved phase error sensitivity,
It facilitates detection of errors when inspecting the phase shift mask.
【０００６】本発明に適用される位相エラー検出感度の
議論は次の通りである。位相差イメージの強度は、下記
の式１３で与えられる。The discussion of the phase error detection sensitivity applied to the present invention is as follows. The intensity of the phase difference image is given by Equation 13 below.
【数１３】Ｉ（φ）＝Ｅ（φ）*Ｅ（φ）[Equation 13] I (φ) = E (φ) * E (φ)
【０００７】関数Ｅ（φ）は、下記の式１４で表される
マスク上の電界分布をとり、下記の式１５で表される０
次成分を分離し、次いで０次成分にλ／４位相ずれを加
えて、次式１６で表される位相差操作を実行することに
よって誘導される。The function E (φ) is the electric field distribution on the mask expressed by the following expression 14, and 0 expressed by the following expression 15 is obtained.
It is derived by separating the second component and then adding a λ / 4 phase shift to the zeroth component and performing the phase difference operation represented by Equation 16 below.
【数１４】 [Equation 14]
【数１５】 [Equation 15]
【数１６】 [Equation 16]
【０００８】位相差強度は次式１７のようになる。The phase difference intensity is expressed by the following equation 17.
【数１７】 [Equation 17]
【０００９】位相差強度の感度は、次式１８のように位
相ずれ変化の関数として変化する。The sensitivity of the phase difference intensity changes as a function of the phase shift change, as shown in the following equation (18).
【数１８】 [Equation 18]
【００１０】検出感度を最大にするには、φ＋３π／４
が±π／２の奇数倍でなければならない。すなわち、次
式１９が成立する。To maximize the detection sensitivity, φ + 3π / 4
Must be an odd multiple of ± π / 2. That is, the following expression 19 is established.
【数１９】φoptimum＝（４ｍ−１）π／４ ただし、ｍ＝０，±１，±２，．．． φoptimum＝−５π／４，−π／４，３π／４，７π／４．．．Φoptimum = (4m−1) π / 4 where m = 0, ± 1, ± 2 ,. ． ． φoptimum = −5π / 4, −π / 4, 3π / 4, 7π / 4. ． ．
【００１１】検出感度の利得は次のように表される。大
部分の移相マスクではそうであるがφ＝πの場合、ｄＩ
／ｄφ＝２であり、φがその最適値の１つであるとき、
すなわち次式２０の値よりも４０％小さい。The detection sensitivity gain is expressed as follows. As with most phase shift masks, if φ = π, dI
/ Dφ = 2 and φ is one of its optimal values,
That is, it is 40% smaller than the value of the following expression 20.
【数２０】 [Equation 20]
【００１２】本発明は、移相式撮像が最善になるように
φをπに保ちながら、φを検査のための最適値に変化さ
せる方法を示す。本発明の方法は、撮像用移相波長をλ
に保ちながら、検査用波長をλからλ'に増大させるこ
とによる、位相ずれφの減少を利用する。移相材料の屈
折率が一定のままである場合、波長λを波長λ'に増加
させると、位相ずれの量がφからφ'に減少する。The present invention shows a method of changing φ to an optimum value for inspection while keeping φ at π for the best phase shift imaging. The method of the present invention sets the imaging phase shift wavelength to λ
While maintaining, the decrease of the phase shift φ by increasing the inspection wavelength from λ to λ ′ is utilized. If the refractive index of the phase-shifting material remains constant, increasing the wavelength λ to the wavelength λ ′ reduces the amount of phase shift from φ to φ ′.
【００１３】したがって、次式２１のように置くことに
よってφをφoptimumに設定することができる。Therefore, φ can be set to φoptimum by setting as in the following expression 21.
【数２１】 [Equation 21]
【００１４】新しい波長λ'で反射率が変化する場合、
最適の動作点が得られるようにλ'を微細同調すること
ができる。そうすると、新しい波長λ'は、次式２２に
従って選ばれることになる。If the reflectivity changes at the new wavelength λ ',
Λ'can be fine tuned to obtain the optimum operating point. Then, the new wavelength λ ′ will be selected according to the following equation 22.
【数２２】 [Equation 22]
【００１５】上式２２に従ってφoptimumを達成するた
めに波長を増減することができる。The wavelength can be increased or decreased to achieve φoptimum according to equation 22 above.
【００１６】別法として、検査用波長λを変化させる代
りに、位相差顕微鏡技術で０次ビームに適用される位相
ずれθを調整することもできる。上式１６を一般化し
て、０次ビームでλ／４の代りにθのずれが可能なよう
にすると、次式２３が得られる。Alternatively, instead of changing the inspection wavelength λ, the phase shift θ applied to the 0th order beam can be adjusted by phase contrast microscopy techniques. When the above equation 16 is generalized to allow the deviation of θ in place of λ / 4 in the 0th-order beam, the following equation 23 is obtained.
【数２３】 [Equation 23]
【００１７】そうすると、上式１７は次式２４のように
なる。Then, the above equation 17 becomes the following equation 24.
【数２４】 [Equation 24]
【００１８】したがって、波長は変化しないままとな
る。０次検査ビームのずれをθoptimumに設定すること
によって、最大検出感度を得ることができる。Therefore, the wavelength remains unchanged. The maximum detection sensitivity can be obtained by setting the deviation of the 0th-order inspection beam to θoptimum.
【００１９】さらに、波長λを照明源、検出用光線及び
検出器に関して所望の波長に設定するとき、検出感度が
最大になるようにθを設定することができる。Further, when the wavelength λ is set to a desired wavelength for the illumination source, the detection light beam and the detector, θ can be set so that the detection sensitivity is maximized.
【００２０】最適動作点が望ましいが、本発明の趣旨
は、最適点から僅かに外れた動作点でも実施できる。Although an optimum operating point is desirable, the spirit of the invention can be practiced at operating points slightly off the optimum point.
【００２１】図１に、本発明の例示的実施例である位相
差顕微鏡８を示す。他の位相検出方式も同様に利用でき
る。図１には、移相マスク１０と、ひとみ面２０内に四
分の一波長板３０を他の要素の間に含む顕微鏡８とが示
されている。波長板３０の厚さはλθ／２πである。図
１には、複合レンズの要素４０と４６からなる典型的な
位相差対物レンズ４２と、０次ビーム用の移相板３０が
示されている。角θと波長λは本発明の趣旨に従って調
節可能である。FIG. 1 shows a phase contrast microscope 8 which is an exemplary embodiment of the present invention. Other phase detection schemes can be used as well. FIG. 1 shows a phase shift mask 10 and a microscope 8 that includes a quarter wave plate 30 in a pupil plane 20 between other elements. The thickness of the wave plate 30 is λθ / 2π. FIG. 1 shows a typical phase-contrast objective lens 42 consisting of elements 40 and 46 of a compound lens and a phase shift plate 30 for the 0th order beam. The angle θ and the wavelength λ can be adjusted according to the spirit of the invention.
【００２２】図２は、本発明の趣旨を干渉顕微鏡に適用
したものである。検査用ビーム１６０がビーム・スプリ
ッタ１５４でビーム１６１と１７１とに分離され、それ
ぞれ鏡１５２と１７０で反射されて、第２のビーム・ス
プリッタ１５０で再結合される。レンズ１６３と１４０
は、スプリット・ビーム１６２用の複合対物レンズを形
成し、レンズ１４６と１４０はもう一方のスプリット・
ビーム１７２用のもう１つの複合対物レンズを形成す
る。鏡１５２は、破線の鏡１５２'で示すように移動し
て、θをその最適値に変えることができる。波長λは、
光源の選択により、あるいはフィルタをその最適値に変
えることによって変化させることができる。FIG. 2 is a diagram in which the gist of the present invention is applied to an interference microscope. Inspection beam 160 is split into beams 161 and 171 at beam splitter 154, reflected at mirrors 152 and 170, respectively, and recombined at second beam splitter 150. Lenses 163 and 140
Form a compound objective lens for split beam 162, lenses 146 and 140 being the other split
Form another compound objective for beam 172. The mirror 152 can be moved to change θ to its optimum value, as shown by the dashed mirror 152 '. The wavelength λ is
It can be varied by the choice of light source or by changing the filter to its optimum value.
【００２３】図２の干渉計の場合、基準アームの位相ず
れはθ、移相マスク（ＰＳＭ）の位相ずれはφである。
最適検査位相ずれθoptimumは、次式２５のように計算
される。In the case of the interferometer of FIG. 2, the phase shift of the reference arm is θ and the phase shift of the phase shift mask (PSM) is φ.
The optimum inspection phase shift θoptimum is calculated as in the following Expression 25.
【数２５】 [Equation 25]
【００２４】上式でφは移相マスクの位相ずれ角であ
り、通常は前と同様に撮像波長でπである必要がある。In the above equation, φ is the phase shift angle of the phase shift mask, which normally needs to be π at the imaging wavelength as before.
【００２５】この場合、次式２６が成立する。In this case, the following equation 26 is established.
【数２６】 θoptimum＝φ＋（２ｍ−１）π／２ ただし、ｍ＝０，１，２，．．．[Equation 26] θoptimum = φ + (2m−1) π / 2 where m = 0, 1, 2 ,. ． ．
【図１】本発明の第１の実施例を例示する位相差顕微鏡
を示す図である。FIG. 1 is a diagram showing a phase contrast microscope illustrating a first embodiment of the present invention.
【図２】本発明の第２の実施例を例示する干渉計を示す
図である。FIG. 2 is a diagram showing an interferometer illustrating a second embodiment of the present invention.
８ 位相差顕微鏡 １０ 移相マスク ２０ ひとみ板 ３０ 四分の一波長板 ４２ 位相差対物レンズ １４０ レンズ １４６ レンズ １５０ ビーム・スプリッタ １５２ 鏡 １５４ ビーム・スプリッタ １６３ レンズ １７０ 鏡 8 phase contrast microscope 10 phase shift mask 20 pupil plate 30 quarter wavelength plate 42 phase difference objective lens 140 lens 146 lens 150 beam splitter 152 mirror 154 beam splitter 163 lens 170 mirror
Claims (6)
とのできる調節可能な移相器を使用することからなる位
相エラーの改善により、フォトリソグラフィ用移相マス
クを検査する方法。1. A method for inspecting a phase shift mask for photolithography by improving a phase error, which comprises using an adjustable phase shifter capable of shifting a 0th order light or a reference light by θ.
使用する波長と同じまたは異なる所望の波長を使用する
ことを特徴とする、請求項１に記載の方法。2. A method according to claim 1, characterized in that a desired wavelength which is the same as or different from the wavelength used for exposing the phase shift mask on the wafer is used.
する、請求項１に記載の方法。3. Method according to claim 1, characterized in that the inspection wavelength is adjustable.
ことを特徴とする、請求項１に記載の方法。4. Method according to claim 1, characterized in that θ is fixed, but optimized.
方程式１及び２によって最適化され、 【数１】 【数２】θoptimum ＝ ２φ−（１±２ｍ）π 新しい波長λ'が下記の方程式３に従って選ばれること
を特徴とする、請求項１、２、３又は４に記載の方法。 【数３】 5. Wavelength and / or θ are optimized according to equations 1 and 2 below: The method according to claim 1, 2, 3 or 4, characterized in that θoptimum = 2φ- (1 ± 2m) π new wavelength λ'is chosen according to equation 3 below. [Equation 3]
程式４、５、６によって最適化されることを特徴とす
る、請求項１、２、３又は４に記載の方法。 【数４】 【数５】θoptimum ＝ ２φ−（１±２ｍ）π 【数６】θoptimum ＝ φ＋（２ｍ−１）π／２6. A method according to claim 1, 2, 3 or 4, characterized in that the wavelength and / or theta or both are optimized by the following equations 4, 5, 6 [Equation 4] [Equation 5] θoptimum = 2φ− (1 ± 2m) π [Equation 6] θoptimum = φ + (2m−1) π / 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/968,745 US5446540A (en) | 1992-10-30 | 1992-10-30 | Method of inspecting phase shift masks employing phase-error enhancing |
| US968745 | 1992-10-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06201602A true JPH06201602A (en) | 1994-07-22 |
| JP2685164B2 JP2685164B2 (en) | 1997-12-03 |
Family
ID=25514710
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24666793A Expired - Lifetime JP2685164B2 (en) | 1992-10-30 | 1993-10-01 | Method for inspecting phase shift mask for photolithography |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US5446540A (en) |
| EP (1) | EP0599361A1 (en) |
| JP (1) | JP2685164B2 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AUPN201295A0 (en) * | 1995-03-28 | 1995-04-27 | Commonwealth Scientific And Industrial Research Organisation | Simplified conditions and configurations for phase-contrast imaging with hard x-rays |
| US5807647A (en) * | 1996-07-03 | 1998-09-15 | Kabushiki Kaisha Toshiba | Method for determining phase variance and shifter stability of phase shift masks |
| US6018392A (en) * | 1998-10-23 | 2000-01-25 | Taiwan Semiconductor Manufacturing Company | Apparatus and method for inspecting phase shifting masks |
| US6396944B1 (en) * | 1999-01-19 | 2002-05-28 | Taiwan Semiconductor Manufacturing Company | Inspection method for Levenson PSM mask |
| US6134014A (en) * | 1999-02-08 | 2000-10-17 | Taiwan Semiconductor Manufacturing Company | Apparatus and method of inspecting phase shift masks using comparison of a mask die image to the mask image database |
| US6819435B2 (en) | 2000-04-12 | 2004-11-16 | Nano Or Technologies Inc. | Spatial and spectral wavefront analysis and measurement |
| US7365858B2 (en) * | 2001-12-18 | 2008-04-29 | Massachusetts Institute Of Technology | Systems and methods for phase measurements |
| US7557929B2 (en) | 2001-12-18 | 2009-07-07 | Massachusetts Institute Of Technology | Systems and methods for phase measurements |
| EP1476715B1 (en) * | 2002-01-24 | 2018-10-10 | Icos Vision Systems N.V. | Improved spatial wavefront analysis and 3d measurement |
| US8662962B2 (en) * | 2008-06-30 | 2014-03-04 | 3M Innovative Properties Company | Sandpaper with non-slip coating layer and method of using |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0289015A (en) * | 1988-09-26 | 1990-03-29 | Shigeo Minami | Method and device for image processing of microsample |
| JPH04177111A (en) * | 1990-11-13 | 1992-06-24 | Mitsubishi Electric Corp | Apparatus for inspecting phase shift mask |
| JPH0521621A (en) * | 1991-07-15 | 1993-01-29 | Matsushita Electric Works Ltd | Package substrate for semiconductor device |
| JPH05216211A (en) * | 1992-02-04 | 1993-08-27 | Fujitsu Ltd | Method and device for inspecting mask |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB131900A (en) * | 1917-04-28 | |||
| US2685228A (en) * | 1949-05-13 | 1954-08-03 | American Optical Corp | Phase contrast optical instrument |
| FR1016752A (en) * | 1950-04-26 | 1952-11-21 | Vente Des Instr De Geodesie He | Variable and colored phase contrast optical device |
| AT335766B (en) * | 1969-11-21 | 1977-03-25 | Anvar | ARRANGEMENT FOR OBSERVATION WITH VARIABLE ACHROMATIC PHASE CONTRAST |
| NL8103505A (en) * | 1981-07-24 | 1983-02-16 | Philips Nv | DEVICE FOR POINT SCANNING OF AN OBJECT. |
| US5124927A (en) * | 1990-03-02 | 1992-06-23 | International Business Machines Corp. | Latent-image control of lithography tools |
| JPH0527410A (en) * | 1991-07-18 | 1993-02-05 | Nikon Corp | Device for inspecting photomask |
| US5246801A (en) * | 1991-09-20 | 1993-09-21 | At&T Bell Laboratories | Method of repairing indentations in phase-shifting lithographic masks |
| JPH05119468A (en) * | 1991-10-29 | 1993-05-18 | Nikon Corp | Mask inspecting device |
-
1992
- 1992-10-30 US US07/968,745 patent/US5446540A/en not_active Expired - Fee Related
-
1993
- 1993-10-01 JP JP24666793A patent/JP2685164B2/en not_active Expired - Lifetime
- 1993-10-08 EP EP93202861A patent/EP0599361A1/en not_active Withdrawn
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0289015A (en) * | 1988-09-26 | 1990-03-29 | Shigeo Minami | Method and device for image processing of microsample |
| JPH04177111A (en) * | 1990-11-13 | 1992-06-24 | Mitsubishi Electric Corp | Apparatus for inspecting phase shift mask |
| JPH0521621A (en) * | 1991-07-15 | 1993-01-29 | Matsushita Electric Works Ltd | Package substrate for semiconductor device |
| JPH05216211A (en) * | 1992-02-04 | 1993-08-27 | Fujitsu Ltd | Method and device for inspecting mask |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2685164B2 (en) | 1997-12-03 |
| EP0599361A1 (en) | 1994-06-01 |
| US5446540A (en) | 1995-08-29 |
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