JPH06196949A - Semiconducotor amplifier - Google Patents

Abstract

PURPOSE:To attain a semiconductor amplifier capable of executing F class operation by which high efficiency can be obtained by a simple circuit constitution. CONSTITUTION:The semiconductor amplifier is provided with a semiconductor chip 1 consisting of a transistor(TR) to be an amplifier circuit connecting an input side circuit 2 to an output side circuit 3, a coupler 4A constituted of arranging a line with lambdag/8 electric length in parallel to an input side waveguide 5 through a slight gap, a coupler 4B constituted of arranging a line with lambdag/8 electric length in parallel to an output side waveguide 6 through a light gap, and a line 7 connecting both the couplers 4A, 4B and constituted so that the power of higher harmonic 2f0 corresponding to twice of reference frequency f0 sent from the output side is injected to the input side through the couplers 4B, 4A.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor amplifier device to which a circuit that enables highly efficient transistor operation is added.

[0002] At present, in mobile communication represented by mobile phones, car phones, etc., or satellite communication using satellites, semiconductor output devices of high output are required as the amount of information is expanded. Efficiency (extracted as input power and output) due to the required capacity of the battery used in the mobile phone or the limited capacity of the solar battery used in the satellite. There is a demand for a semiconductor amplifier device having a good power ratio).

[0003]

2. Description of the Related Art Conventionally, transistors have been operated in class B in order to increase the output and efficiency of semiconductor amplifier devices. In recent years, however, harmonics generated during class B operation have been processed. It has been proposed to employ class F operation to further improve efficiency.

Generally, the theoretical efficiency of a semiconductor amplifier device of class B operation is about 78% (if necessary, "Nikkei Electronics 1976.8.23, pages 121-143."
Page)), and in the class F operation semiconductor amplifier device, it is 100% (if necessary, "Nikkei Electronics 1976.9.20, pages 117 to 12").
Page 7)).

[0005]

The theoretical efficiency of the class B semiconductor amplifier or class F semiconductor amplifier described above depends on the power loss in the wiring and the resistance component in each device. It is an unrealizable value due to the existence of. Therefore, at present, the efficiency in the class B operation semiconductor amplifying device cannot fully meet the demand, and the class F operation semiconductor amplifying device is less than the class B operating semiconductor amplifying device. It is possible to operate with high efficiency,
The circuit configuration is very complicated.

The present invention is intended to realize a semiconductor amplifier device of class F operation which can obtain high efficiency with a simple circuit configuration.

[0007]

FIG. 1 shows a circuit diagram of an essential part of a semiconductor amplifier device for explaining the principle of the present invention. In the figure, 1 is a semiconductor chip forming an amplifier circuit, 2
Is an input side circuit, 3 is an output side circuit, 4A and 4B are couplers characterized by the present invention, 5 is an input side waveguide, 6 is an output side waveguide, and 7 is a line connecting the couplers 4A and 4B. Shown respectively.

In this semiconductor amplifying device, the coupler 4
B is arranged in parallel with the waveguide on the output side of the output side circuit 3 by a length of λ _g / 8 (λ _g : wavelength in the waveguide) with respect to the traveling direction while maintaining a slight gap. The end on the traveling direction side is terminated with 50 [Ω].

With the above arrangement, the fundamental frequency f
The electrical length is λ _g / 8 for ₀ (the frequency to be amplified), but λ _g / 4 for the double harmonic 2f ₀ .
Therefore, it acts as a so-called directional coupler with respect to the double harmonic wave 2f ₀ .

Further, by making the gap between the coupler 4B and the waveguide 6 dense, it is possible to couple half the double harmonic power into the line 7 in the coupler 4B. Since the electrical length is λ _g / 8 for the fundamental frequency f ₀ , the coupling rate is sufficiently small and the fundamental frequency power is not affected.

Now, the doubled harmonic power coupled in the line 7 of the coupler 4B is applied to the waveguide 5 on the input side of the input side circuit 2 in the same manner as described above for the output side circuit 3.
The electrical length is λ _g / 8, which are arranged in parallel while maintaining a small gap.
And is led to the coupler 4A terminated with 50 [Ω]. Due to the coupler 4A arranged on the input side, double harmonics can be injected into the input side circuit 2.

According to the operation described above, the output side voltage and the output side current come close to the rectangular wave and the half-wave sine wave, respectively. As described above, it is explained as follows that the class F operation is realized by injecting the double harmonic. Theoretically, processing should be performed for higher-order harmonics that are more than double, such as triple, quadruple, ... Since it is a higher harmonic wave, in practice, it is not necessary to consider other higher harmonic waves. The following equation describes that class F operation is achieved when a double harmonic is injected.

[0013]

[Equation 1]

[0014]

[Equation 2]

From the above, in the semiconductor amplifier device of the present invention, the transistor to which the input side circuit (for example, the input side circuit 2) and the output side circuit (for example, the output side circuit 3) for connection are connected. The amplifier circuit (for example, the semiconductor chip 1) and the waveguide (for example, the input-side waveguide 5) in the input-side circuit have few lines having an electrical length of λ _g / 8 (λ _g : wavelength in the waveguide). The electrical lengths of the first coupler (for example, the coupler 4A) and the waveguide in the output side circuit (for example, the output side waveguide 6) that are arranged in parallel with each other with a gap between them are λ _g / 8 (λ _g : wavelength in the waveguide) and a second coupler (for example, coupler 4B) configured by arranging lines that are parallel to each other with a small air gap, and each of the couplers (coupler 4A and coupler 4B). ) With a line (for example, line 7) connecting between the output side circuit and Twice the power of the harmonic 2f ₀ of the fundamental frequency f ₀ issued through the second coupler and the first coupler, characterized in that injected into the input side circuit.

[0016]

By adopting the above-mentioned means, the basic frequency f ₀ can be doubled by simply adding a line having a simple electric length λ _g / 8 without changing the circuit in the existing semiconductor amplifier device. High-efficiency class F operation can be realized by injecting the electric power of the harmonic wave 2f ₀ from the output side to the input side, and equipment used for mobile communication such as mobile phones and car phones, or for satellite communication, etc. It is suitable for devices with limited power supply.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 2 shows a circuit diagram of a main part of a semiconductor amplifying device for explaining one embodiment of the present invention. The same symbols as those used in FIG. 1 represent the same parts or the same. It has meaning.

As is apparent from the figure, the semiconductor chip 1 is an amplifier circuit composed of a transistor Q, and an input side circuit 2
The output side circuit 3 is an ordinary stub matching circuit, and the couplers 4A and 4B are configured as described as the principle of the present invention. According to this figure, the semiconductor amplifying device according to the present invention has the same structure as that of the conventional semiconductor amplifying device.
It will be appreciated that A and 4B and line 7 have only been added under certain conditions, there is no special construction other than this, and it will be appreciated that its implementation is easy.

Also in this embodiment, the input side waveguide and the output side waveguide in the input side circuit 2 and the output side circuit 3 are connected to the input side circuit 2 and the output side circuit 3 as in the semiconductor amplifier device according to the principle of the present invention described above. Coupler 4A along a line with an electrical length of λ _g / 8
And 4B are provided, and the couplers 4A and 4B are
Without adversely whatsoever of action for the power of the fundamental frequency f _0, and operates as only the directional coupler with respect to the double harmonic 2f ₀ from the output-side circuit 3, harmonic 2f ₀ of the double
Power is injected into the input side circuit 2 so that the output side voltage becomes a rectangular wave and the output side current becomes close to a half-wave sine wave, so that the efficiency of the semiconductor amplifier device approaches an ideal state. Operate.

FIG. 3 is a diagram for explaining the state of efficiency improvement in the embodiment shown in FIG. 2, where the horizontal axis shows the efficiency [%] and the horizontal axis shows the output of the transistor [%]. dB
m] are taken respectively. In the figure, + indicates the characteristic line of the embodiment of the present invention, and □ indicates the characteristic line of the conventional example added for comparison. Here, the efficiency is a value when the output of the transistor is fixed and the circuit of the semiconductor amplifying device is adjusted so that the maximum efficiency is obtained.

As is apparent from the figure, according to the embodiment of the present invention, the efficiency is surely improved as compared with the case where the circuit of the semiconductor amplifying device is adjusted by the conventional technique. By the way, in the data shown, the transistor output is 30
If it is [dBm], the improvement in efficiency according to the present invention is 1
[%], But also at 34 [dBm], about 6
There is an improvement in [%]. Although this value alone may not seem to be a significant improvement, the output of the transistor currently used in mobile phones is about 2 [W] (33 [d
Bm]), and the talk time depending on the battery life is about 12 [hours], so the efficiency is 6
[%] The improvement is about 1 [hours] in talk time.
It will be recognized that there is a sufficient improvement there.

[0022]

In the semiconductor amplifying device according to the present invention, the electric length is λ _{g in the} amplifying circuit composed of the transistor to which the input side circuit and the output side circuit are connected and the input side waveguide.
/ 8 line is arranged in parallel with a slight gap, and the electrical length is λ _{g in the} output side waveguide and the first coupler.
A second coupler composed of / 8 lines arranged parallel to each other with a slight air gap, and a line connecting the couplers to each other, and is twice the fundamental frequency f ₀ transmitted from the output side. The power of the harmonic wave 2f ₀ is injected into the input side through the second coupler and the first coupler.

By adopting the above-mentioned structure, the basic frequency f can be obtained by adding a simple electric length λ _g / 8 line without changing the circuit in the existing semiconductor amplifier device.
Is injected into the input side of twice the power of the harmonic 2f ₀ of ₀ from the output side can be realized F class operation with high efficiency, a mobile communication such as cellular phones and car phones, or satellite communications, etc. It is suitable for equipment with a limited power supply, such as equipment used for.

[Brief description of drawings]

FIG. 1 is an explanatory diagram of a main circuit of a semiconductor amplifier device for explaining the principle of the present invention.

FIG. 2 is a circuit diagram of a main part of a semiconductor amplifier device for explaining an embodiment of the present invention.

FIG. 3 is a diagram for explaining a state of efficiency improvement in the embodiment seen in FIG.

[Explanation of symbols]

 1 semiconductor chip forming an amplifier circuit 2 input side circuit 3 output side circuit 4A coupler 4B coupler 5 input side waveguide 6 output side waveguide 7 lines

Claims (1)

[Claims] 1. An amplifier circuit comprising a transistor to which an input side circuit and an output side circuit are connected for matching, and a waveguide in the input side circuit has an electrical length of λ _g / 8.
(Λ _g : wavelength in the waveguide) and a first coupler configured by arranging the lines in parallel with a slight air gap, and the waveguide in the output side circuit has an electrical length of λ _g / 8
The output side circuit is provided with a second coupler configured by arranging a line (λ _g : wavelength in the waveguide) in parallel with a slight air gap, and a line connecting the respective couplers. A semiconductor amplifying device, characterized in that electric power of a harmonic wave 2f _{0 that is} twice as high as the fundamental frequency f ₀ transmitted from the device is injected into the input side circuit via the second coupler and the first coupler.