JPH06195647A - Magneto-resistance effect type thin film magnetic head - Google Patents
Magneto-resistance effect type thin film magnetic headInfo
- Publication number
- JPH06195647A JPH06195647A JP34594792A JP34594792A JPH06195647A JP H06195647 A JPH06195647 A JP H06195647A JP 34594792 A JP34594792 A JP 34594792A JP 34594792 A JP34594792 A JP 34594792A JP H06195647 A JPH06195647 A JP H06195647A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic
- effect element
- magnetoresistive effect
- magnetoresistive
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気ディスク装置に用い
られる再生用の磁気抵抗効果型薄膜磁気ヘッドに関する
ものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reproducing magnetoresistive thin film magnetic head used in a magnetic disk device.
【０００２】[0002]
【従来の技術】以下に従来の磁気抵抗効果型薄膜磁気ヘ
ッドについて説明する。図６は従来の磁気抵抗効果型薄
膜磁気ヘッドの主要構成の概略底面図である。図７は従
来の磁気抵抗効果型薄膜磁気ヘッドの主要構成の概略底
面図のＡ−Ａ断面図である。１は磁気抵抗効果型薄膜磁
気ヘッドが構成されるセラミックの基板で、基板１は例
えばＭｎ−Ｚｎ，Ａｌ2 Ｏ3 ／ＴｉＣ等の材料から成っ
ている。２は磁気を検出する磁気抵抗効果素子で、磁気
抵抗効果素子２には磁気抵抗効果素子２にセンス電流を
流し磁気信号を取り出す端子３，４が設けられている。
端子３，４は例えば金、銅等の導電性金属の材料から成
っている。５，６は磁気抵抗効果素子２をシールドする
ように磁気抵抗効果素子２を挟んで配置されたシールド
用の薄膜の磁性体で、磁性体５，６は例えばパーマロ
イ、センダスト等の材料から成っている。７は基板１と
磁性体５とを磁気的に絶縁するように設けられた非磁性
絶縁層の酸化膜、８は磁性体５と磁気抵抗効果素子２と
を磁気的に絶縁するように設けられた非磁性絶縁層の酸
化膜、９は磁気抵抗効果素子２と磁性体６とを磁気的に
絶縁するように設けられた非磁性層の酸化膜、１０は磁
気抵抗効果素子２と端子３，４と磁性体５，６を保護す
るように設けられた非磁性層の酸化膜である。非磁性絶
縁層の酸化膜７，８，９，１０は例えばＳｉＯ2 ，Ａｌ
2 Ｏ 3 等の材料から成っている。2. Description of the Related Art The conventional magnetoresistive thin film magnetic field is described below.
Will be described. FIG. 6 shows a conventional magnetoresistive thin type.
It is a schematic bottom view of the main configuration of the film magnetic head. Figure 7 is
Outline of main structure of conventional magnetoresistive thin film magnetic head
It is an AA sectional view of a side view. 1 is a magnetoresistive thin film magnet
An example of the substrate 1 is a ceramic substrate that constitutes the air head.
For example, Mn-Zn, Al2O3/ Made of materials such as TiC
ing. Reference numeral 2 denotes a magnetoresistive effect element that detects magnetism.
A sense current is applied to the magnetoresistive effect element 2 in the resistance effect element 2.
Terminals 3 and 4 for taking out the sink magnetic signal are provided.
The terminals 3 and 4 are made of a conductive metal material such as gold or copper.
ing. Reference numerals 5 and 6 shield the magnetoresistive element 2.
Placed with the magnetoresistive effect element 2 in between
Is a thin film magnetic material for use with magnetic materials 5, 6 such as permalo
It is made of materials such as a and sendust. 7 is the substrate 1
Non-magnetic provided so as to magnetically insulate the magnetic body 5.
An oxide film of an insulating layer, 8 is a magnetic body 5 and a magnetoresistive effect element 2.
Of the non-magnetic insulating layer provided to magnetically insulate the
And a magnetic film 9 for magnetically connecting the magnetoresistive effect element 2 and the magnetic body 6.
The non-magnetic oxide film 10 provided to insulate is a magnetic layer.
Protects the air resistance effect element 2, terminals 3, 4 and magnetic bodies 5, 6.
It is an oxide film of the non-magnetic layer provided as described above. Non-magnetic
The edge oxide films 7, 8, 9, and 10 are made of, for example, SiO.2, Al
2O 3Made of materials such as.
【０００３】以上のように構成された磁気抵抗効果型薄
膜磁気ヘッドについて、以下にその動作について説明す
る。まず、端子３から磁気抵抗効果素子２、端子４へセ
ンス電流を流す。磁気抵抗効果素子２は相対する磁気デ
ィスク媒体に記録された情報の磁束変化を磁気抵抗効果
素子２の直流抵抗の変化として反応する。これを端子
３，４間の電圧変化として検出することにより、磁気デ
ィスク媒体に記録された情報を再生する。The operation of the magnetoresistive thin-film magnetic head having the above structure will be described below. First, a sense current is passed from the terminal 3 to the magnetoresistive effect element 2 and the terminal 4. The magnetoresistive effect element 2 responds to a change in the magnetic flux of information recorded on the opposing magnetic disk medium as a change in the direct current resistance of the magnetoresistive effect element 2. By detecting this as a voltage change between terminals 3 and 4, the information recorded on the magnetic disk medium is reproduced.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら上記の従
来の構成では、磁気抵抗効果素子２、及び端子３，４と
磁性体５，６とを磁気的に絶縁するするように、磁気抵
抗効果素子２、及び端子３，４と磁性体５，６との間に
酸化膜８，９が配置されているので、センス電流による
ジュール熱、磁気抵抗効果素子２の磁気ディスク媒体と
の接触摩擦による発熱の放熱が効率的に行えず、磁気抵
抗効果素子２の温度が上昇するので、磁気抵抗効果素子
２の磁気特性が劣化し、また、熱雑音の障害を受け磁気
抵抗効果素子２の再生特性が劣化する、さらには磁気抵
抗効果素子２が溶断破壊するという問題点を有してい
た。However, in the above-mentioned conventional configuration, the magnetoresistive effect element 2 and the magnetoresistive effect element 2 are provided so as to magnetically insulate the terminals 3, 4 and the magnetic bodies 5, 6 from each other. , And the oxide films 8 and 9 are disposed between the terminals 3 and 4 and the magnetic bodies 5 and 6, so that Joule heat due to the sense current and heat generation due to contact friction between the magnetoresistive effect element 2 and the magnetic disk medium are generated. Since the heat cannot be dissipated efficiently and the temperature of the magnetoresistive effect element 2 rises, the magnetic characteristics of the magnetoresistive effect element 2 are deteriorated, and the reproduction characteristics of the magnetoresistive effect element 2 are deteriorated due to the interference of thermal noise. In addition, there is a problem that the magnetoresistive effect element 2 is broken by fusing.
【０００５】本発明は上記従来の問題点を解決するもの
で、安定した再生特性と、高い信頼性を持つ磁気抵抗効
果型薄膜磁気ヘッドを提供することを目的とする。The present invention solves the above-mentioned conventional problems, and an object of the present invention is to provide a magnetoresistive thin film magnetic head having stable reproduction characteristics and high reliability.
【０００６】[0006]
【課題を解決するための手段】この目的を達成するため
に本発明の磁気抵抗効果型薄膜磁気ヘッドは、磁気抵抗
効果素子とシールド用の磁性体の間に設けた磁気絶縁材
を磁気抵抗効果素子側を酸化物に、磁性体側を非磁性の
金属体の二層にした構成を有している。In order to achieve this object, a magnetoresistive thin film magnetic head according to the present invention uses a magnetoresistive material provided between a magnetoresistive element and a magnetic material for shielding. It has a structure in which the element side is made of an oxide and the magnetic body side is made of two layers of a non-magnetic metal body.
【０００７】[0007]
【作用】この構成によって、動作中の磁気抵抗効果素子
に生じる熱は、熱伝導率の高い非磁性の金属体によって
速やかにシールド用の薄膜の磁性体に伝導し、放熱する
ことができる。With this configuration, the heat generated in the magnetoresistive effect element during operation can be quickly conducted to the magnetic body of the shielding thin film by the nonmagnetic metal body having high thermal conductivity and radiated.
【０００８】[0008]
（実施例１）以下本発明の一実施例について、図面を参
照しながら説明する。図１は本発明の一実施例における
磁気抵抗効果型薄膜磁気ヘッドの主要構成の概略底面図
である。図２は本発明の一実施例における磁気抵抗効果
型薄膜磁気ヘッドの主要構成の概略底面図のＢ−Ｂ断面
図である。１はセラミックの基板で、２は磁気抵抗効果
素子で、３，４は端子で、５，６は薄膜の磁性体で、７
は非磁性絶縁層の酸化膜で、１０は非磁性層の酸化膜
で、従来例の同一番号の要素と同一なので説明は省略す
る。１１，１２は磁気抵抗効果素子２を磁気的に絶縁す
るように磁気抵抗効果素子２を挟んで設けられた非磁性
絶縁層の酸化膜で、非磁性絶縁層の酸化膜１１，１２は
例えばＳｉＯ2 ，Ａｌ2 Ｏ3 等の材料から成っている。
１３は磁性体５と酸化膜１１の間に設けられた非磁性の
金属体で、非磁性の金属体１３は磁気抵抗効果素子２に
生じる熱を速やかに磁性体５に伝導する。１４は磁性体
６と非磁性絶縁層の酸化膜１２の間に設けられた非磁性
の金属体で、非磁性の非磁性の金属体１４は磁気抵抗効
果素子２に生じる熱を速やかに磁性体６に伝導する。な
お、非磁性の金属体１３，１４は、金，銀，銅，クロ
ム，タンタル，タングステンのうちの一つの金属より成
っている。(Embodiment 1) An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic bottom view of the main configuration of a magnetoresistive effect thin film magnetic head according to an embodiment of the present invention. FIG. 2 is a BB cross-sectional view of a schematic bottom view of the main configuration of the magnetoresistive effect thin film magnetic head in one embodiment of the present invention. 1 is a ceramic substrate, 2 is a magnetoresistive effect element, 3 and 4 are terminals, 5 and 6 are thin film magnetic materials, and 7
Is an oxide film of a non-magnetic insulating layer, and 10 is an oxide film of a non-magnetic layer. Reference numerals 11 and 12 are oxide films of the non-magnetic insulating layer provided so as to magnetically insulate the magneto-resistive effect element 2, and the oxide films 11 and 12 of the non-magnetic insulating layer are made of, for example, SiO. 2 , made of materials such as Al 2 O 3 .
Reference numeral 13 denotes a non-magnetic metal body provided between the magnetic body 5 and the oxide film 11. The non-magnetic metal body 13 quickly conducts heat generated in the magnetoresistive effect element 2 to the magnetic body 5. Reference numeral 14 is a non-magnetic metal body provided between the magnetic body 6 and the oxide film 12 of the non-magnetic insulating layer. The non-magnetic non-magnetic metal body 14 quickly absorbs heat generated in the magnetoresistive element 2. Conducted to 6. The non-magnetic metal bodies 13 and 14 are made of one metal selected from gold, silver, copper, chromium, tantalum, and tungsten.
【０００９】以上のように構成された磁気抵抗効果型薄
膜磁気ヘッドについて、図１，図２を用いてその動作を
説明する。まず、端子３から磁気抵抗効果素子２、端子
４へセンス電流を流す。磁気抵抗効果素子２は相対する
磁気ディスク媒体に記録された情報の磁束変化を磁気抵
抗効果素子２の直流抵抗の変化として反応する。これを
端子３，４間の電圧変化として検出することにより、磁
気ディスク媒体に記録された情報を再生する。この時、
磁気抵抗効果素子２に流すセンス電流によるジュール
熱、及び、磁気抵抗効果素子２と磁気ディスク媒体との
接触摩擦による発熱の熱は非磁性の金属体１３，１４を
伝導して速やかに磁性体５，６に伝えられ放熱される。The operation of the magnetoresistive thin-film magnetic head configured as described above will be described with reference to FIGS. First, a sense current is passed from the terminal 3 to the magnetoresistive effect element 2 and the terminal 4. The magnetoresistive effect element 2 responds to a change in the magnetic flux of information recorded on the opposing magnetic disk medium as a change in the direct current resistance of the magnetoresistive effect element 2. By detecting this as a voltage change between terminals 3 and 4, the information recorded on the magnetic disk medium is reproduced. At this time,
The Joule heat due to the sense current flowing through the magnetoresistive effect element 2 and the heat of heat generated due to the contact friction between the magnetoresistive effect element 2 and the magnetic disk medium are conducted through the non-magnetic metal bodies 13 and 14 and the magnetic body 5 is quickly transferred. , 6 is transmitted and heat is dissipated.
【００１０】本実施例による磁気抵抗効果型薄膜磁気ヘ
ッドの特性と従来の磁気抵抗効果型薄膜磁気ヘッドの特
性を図３，図４，図５に比較して示す。本実施例の磁気
抵抗効果型薄膜磁気ヘッドの非磁性絶縁層の酸化膜１
１，１２の厚みは３００Åで材質はＳｉＯで、非磁性の
金属体１３，１４の厚みは１７００Åで材質はＡｕであ
る。従来の磁気抵抗効果型薄膜磁気ヘッドの非磁性絶縁
層の酸化膜８，９の厚みは２０００Åで材質はＳｉＯで
ある。図３に示すように磁気抵抗効果素子２に流すセン
ス電流が１０ｍＡ近傍で従来の磁気抵抗効果型薄膜磁気
ヘッドの磁気抵抗効果素子２の直流抵抗の上昇が認めら
れる。従来の磁気抵抗効果型薄膜磁気ヘッドの磁気抵抗
効果素子２はセンス電流１３ｍＡで溶断破壊し、本発明
の磁気抵抗効果型薄膜磁気ヘッドの磁気抵抗効果素子２
はセンス電流２５ｍＡで溶断破壊した。図３の結果に基
づいて、磁気抵抗効果素子２の温度上昇と熱雑音の影響
を計算した結果を図４，図５に示す。図３，図４，図５
から明かなように、本実施例による磁気抵抗効果型薄膜
磁気ヘッドは、直流抵抗の安定度、熱雑音の影響の点で
優れた効果が得られる。The characteristics of the magnetoresistive effect thin film magnetic head according to this embodiment and the characteristics of the conventional magnetoresistive effect thin film magnetic head are shown in comparison with FIG. 3, FIG. 4 and FIG. The oxide film 1 of the non-magnetic insulating layer of the magnetoresistive thin-film magnetic head of this embodiment.
The thicknesses of 1 and 12 are 300Å and the material is SiO, and the thicknesses of the non-magnetic metal bodies 13 and 14 are 1700Å and the material is Au. The thickness of the oxide films 8 and 9 of the non-magnetic insulating layer of the conventional magnetoresistive thin-film magnetic head is 2000 liters and the material is SiO 2. As shown in FIG. 3, an increase in the DC resistance of the magnetoresistive effect element 2 of the conventional magnetoresistive effect type thin film magnetic head is recognized when the sense current passed through the magnetoresistive effect element 2 is around 10 mA. The magnetoresistive effect element 2 of the conventional magnetoresistive effect thin film magnetic head is melt-fractured by a sense current of 13 mA, and the magnetoresistive effect element 2 of the magnetoresistive effect thin film magnetic head of the present invention.
Was fused and destroyed at a sense current of 25 mA. 4 and 5 show the results of calculating the effect of temperature rise and thermal noise of the magnetoresistive effect element 2 based on the result of FIG. 3, 4, and 5
As is clear from the above, the magnetoresistive thin-film magnetic head according to this embodiment has excellent effects in terms of stability of DC resistance and influence of thermal noise.
【００１１】以上のように本実施例によれば、磁気抵抗
効果素子２とシールド用の磁性体５，６の間に設けた磁
気絶縁材を磁気抵抗効果素子２側を酸化膜１１，１２
に、磁性体５，６側を非磁性の金属体１３，１４の二層
にしたことにより、磁気抵抗効果素子２に生じる熱を速
やかに放熱することができ、磁気抵抗効果素子２の直流
抵抗を安定させ、熱雑音の影響を小さくすることができ
る。As described above, according to this embodiment, the magnetic insulating material provided between the magnetoresistive effect element 2 and the magnetic bodies 5 and 6 for shielding is provided on the side of the magnetoresistive effect element 2 with the oxide films 11 and 12.
In addition, since the magnetic bodies 5 and 6 have two layers of non-magnetic metal bodies 13 and 14, heat generated in the magnetoresistive effect element 2 can be quickly dissipated, and the DC resistance of the magnetoresistive effect element 2 can be increased. Can be stabilized and the influence of thermal noise can be reduced.
【００１２】[0012]
【発明の効果】以上のように本発明は、磁気抵抗効果素
子とシールド用の磁性体の間に設けた磁気絶縁材を磁気
抵抗効果素子側を酸化物に、磁性体側を非磁性金属の二
層にしたことにより、磁気抵抗効果素子の磁気ディスク
媒体との摩擦、接触等による発熱や、センス電流による
ジュール熱の発熱を速やかに放熱することができ、磁気
抵抗効果素子近傍の温度上昇を抑制し、磁気抵抗効果素
子の特性が劣化せず、熱雑音による障害を受けない安定
した再生特性が得られる信頼性の高い優れた磁気抵抗効
果型薄膜磁気ヘッドを実現できるものである。As described above, according to the present invention, the magnetic insulating material provided between the magnetoresistive effect element and the magnetic body for shielding is made of an oxide on the magnetoresistive effect element side and a non-magnetic metal on the magnetic body side. By using a layer, it is possible to quickly dissipate heat generated by friction and contact of the magnetoresistive element with the magnetic disk medium and Joule heat generated by the sense current, and suppress temperature rise near the magnetoresistive element. However, it is possible to realize a highly reliable and excellent magnetoresistive thin-film magnetic head in which the characteristics of the magnetoresistive effect element are not deteriorated and stable reproduction characteristics that are not damaged by thermal noise are obtained.
【図１】本発明の一実施例における磁気抵抗効果型薄膜
磁気ヘッドの主要構成の概略底面図FIG. 1 is a schematic bottom view of the main configuration of a magnetoresistive thin film magnetic head according to an embodiment of the invention.
【図２】本発明の一実施例における磁気抵抗効果型薄膜
磁気ヘッドの主要構成の概略底面図のＢ−Ｂ断面図FIG. 2 is a sectional view taken along the line BB of the schematic bottom view of the main configuration of the magnetoresistive effect thin film magnetic head in one embodiment of the present invention.
【図３】本発明の一実施例と従来例の磁気抵抗効果素子
のセンス電流と直流抵抗の関係を示した図FIG. 3 is a diagram showing a relationship between a sense current and a DC resistance of a magnetoresistive effect element according to an embodiment of the present invention and a conventional example.
【図４】本発明の一実施例と従来例の磁気抵抗効果素子
のセンス電流と温度上昇の関係を示した図FIG. 4 is a diagram showing a relationship between a sense current and a temperature rise of a magnetoresistive effect element according to an embodiment of the present invention and a conventional example.
【図５】本発明の一実施例と従来例の磁気抵抗効果素子
のセンス電流と熱雑音の関係を示した図FIG. 5 is a diagram showing a relationship between a sense current and thermal noise of a magnetoresistive effect element according to an embodiment of the present invention and a conventional example.
【図６】従来の磁気抵抗効果型薄膜磁気ヘッドの主要構
成の概略底面図FIG. 6 is a schematic bottom view of the main configuration of a conventional magnetoresistive thin film magnetic head.
【図７】従来の磁気抵抗効果型薄膜磁気ヘッドの主要構
成の概略底面図のＡ−Ａ断面図FIG. 7 is a cross-sectional view taken along line AA of the schematic bottom view of the main configuration of the conventional magnetoresistive thin film magnetic head.
１ 基板 ２ 磁気抵抗効果素子 ３，４ 端子 ５，６ 磁性体 ７，１１，１２ 非磁性絶縁層の酸化膜 １０ 非磁性層の酸化膜 １３，１４ 非磁性の金属体 1 Substrate 2 Magnetoresistive Element 3,4 Terminal 5,6 Magnetic Material 7,11,12 Oxide Film of Nonmagnetic Insulating Layer 10 Oxide Film of Nonmagnetic Layer 13,14 Nonmagnetic Metallic Material
Claims (2)
ド用の薄膜の磁性体間に、二端子型構造の磁気抵抗効果
素子が非磁性絶縁層の酸化膜介して挟まれた磁気抵抗効
果型薄膜磁気ヘッドであって、前記磁性体と前記酸化膜
の間に非磁性の金属体を配置したことを特徴とする磁気
抵抗効果型薄膜磁気ヘッド。1. A magnetoresistive effect thin film in which a magnetoresistive effect element having a two-terminal type structure is sandwiched between two magnetic thin film magnetic films arranged on a ceramic substrate with an oxide film of a nonmagnetic insulating layer interposed therebetween. A magnetoresistive thin-film magnetic head, wherein a non-magnetic metal body is arranged between the magnetic body and the oxide film.
タンタル，タングステン，チタンのうちの一つの金属か
らなることを特徴とする請求項１記載の磁気抵抗効果型
薄膜磁気ヘッド。2. The non-magnetic metal body is gold, silver, copper, chromium,
2. The magnetoresistive thin-film magnetic head according to claim 1, wherein the thin film magnetic head is made of one of tantalum, tungsten and titanium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34594792A JPH06195647A (en) | 1992-12-25 | 1992-12-25 | Magneto-resistance effect type thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34594792A JPH06195647A (en) | 1992-12-25 | 1992-12-25 | Magneto-resistance effect type thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06195647A true JPH06195647A (en) | 1994-07-15 |
Family
ID=18380087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34594792A Pending JPH06195647A (en) | 1992-12-25 | 1992-12-25 | Magneto-resistance effect type thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06195647A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958612A (en) * | 1996-11-28 | 1999-09-28 | Nec Corporation | Magnetoresistive read transducer |
| US6252749B1 (en) | 1997-09-17 | 2001-06-26 | Alps Electric Co., Ltd. | Thin film magnetic head having a gap layer with improved thermal conductivity |
-
1992
- 1992-12-25 JP JP34594792A patent/JPH06195647A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5958612A (en) * | 1996-11-28 | 1999-09-28 | Nec Corporation | Magnetoresistive read transducer |
| US6252749B1 (en) | 1997-09-17 | 2001-06-26 | Alps Electric Co., Ltd. | Thin film magnetic head having a gap layer with improved thermal conductivity |
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