JPH06192657A - Liquid crystal composition - Google Patents

Liquid crystal composition

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Publication number
JPH06192657A
JPH06192657A JP21228493A JP21228493A JPH06192657A JP H06192657 A JPH06192657 A JP H06192657A JP 21228493 A JP21228493 A JP 21228493A JP 21228493 A JP21228493 A JP 21228493A JP H06192657 A JPH06192657 A JP H06192657A
Authority
JP
Japan
Prior art keywords
liquid crystal
formula
compound
phase
crystal composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21228493A
Other languages
Japanese (ja)
Inventor
Nobuhiro Okabe
伸宏 岡部
Tadaaki Isozaki
忠昭 磯崎
Giichi Suzuki
義一 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Shell Sekiyu KK
Original Assignee
Showa Shell Sekiyu KK
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Publication date
Application filed by Showa Shell Sekiyu KK filed Critical Showa Shell Sekiyu KK
Priority to JP21228493A priority Critical patent/JPH06192657A/en
Publication of JPH06192657A publication Critical patent/JPH06192657A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To obtain a liquid crystal composition having a new phase series, i.e., the fourth phase series by mixing two specified compounds with each other. CONSTITUTION:The composition is prepared by mixing 80-40 pts.wt. compound of formula I (wherein R1 and R2 are each 4-18 C n-alkyl; and * represents asymmetry) with 20-60 pts.wt. compound of formula II (wherein R3 and R4 are each 4-18C n-alkyl; and * represents asymmetry). It is required that the optical purity of each compound should be at least 80%ee, that the compound of formula II should be an R isomer when the compound of formula I is an R isomer, and that the compound of formula II should be an S isomer when the compound of formula I is an S isomer. This composition can develop an antiferroelectric phase in two temperature regions.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、3つの光学的安定状態
(三安定状態)を有する反強誘電相を2種類持つ液晶組
成物に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a liquid crystal composition having two kinds of antiferroelectric phases having three optical stable states (tristable states).

【0002】[0002]

【従来技術】従来の液晶素子としては、TN(ツイステ
ッドネマチック)型と呼ばれる方式が多用されている
(M.Schadt and W.Herfrich 著,Applied Physics Le
tters.第18巻 第4号 127頁〜128頁)。TN
型液晶素子は、一対の透明電極基板間にネマチック液晶
を封入して、液晶分子が上下の基板間で90°ねじれる
ように配列したもので、電界の印加によりねじれ構造を
消失させて光を透過あるいは遮断し、明暗を表示する。
しかしながら、TN型液晶素子を、帯状の走査電極群と
信号電極群を直交させて配したマトリクス電極構造の液
晶表示装置に適用しようとした場合、応答速度が遅い、
電圧−光透過率特性が十分な非線形性を有していない、
などからマトリクスの画素密度を高くできないという問
題があり、応用分野が大幅に制限されているのが現状で
ある。このような状況のなかで、Meyer 等によって合成
された強誘電性を示す液晶が注目を集めている(Le Jou
rnal de Physique,第36巻,1975年3月,L−6
9頁〜L−71頁)。現在最も広く研究されているの
は、双安定性を有する強誘電性液晶素子である(例え
ば、特公昭63−22287号公報、米国特許第436
7924号明細書)。双安定性液晶としては、光学活性
なカイラルスメクチックC相(SmC*)またはH相(S
mH*)を有する液晶が知られ、この液晶はバルク状態
で固有の螺旋構造を形成する。これを、螺旋構造を抑制
するに十分短い距離をおいた基板間に挟持すると、液晶
は電界に対して2つの安定状態を示す。つまり、一方向
の電界に対して第1の光学的安定状態に、逆方向の電界
に対しては第2の光学的安定状態に液晶が配向し、従っ
て、印加される電界の向きにより前記2つの光学的安定
状態間をスイッチングできる。しかも、このスイッチン
グ速度は前記TN型液晶素子に比し極めて速く、さらに
電界を取除いても各安定状態を維持する性質を有すると
いう利点がある。図1(b)には、この液晶を用いた表示
装置に図1(a)に示す3角波電界を印加した時の光学透
過率の変化を示す。一方、近年、3つの光学的安定状態
を有する反強誘電性液晶が提示され、より優れた電気光
学効果を示すものとして着目されている(A.D.L.Cha
ndani,E.Gorecka,Y.Ouchi,H.Takezoe and A.Fuku
da,Jpn.J.Appl.Phys.,28(1989)L1265)。この液晶
は、無電界時には第1の光学的安定状態に、一方向の電
界に対しては第2の光学的安定状態に、さらに逆方向の
電界に対しては第3の光学的安定状態に配向し、印加さ
れる電界の向きと強さにより前記3つの安定状態間を高
速でスイッチングできる。さらに印加電圧に対する前記
3つの安定状態間の光学透過率変化が電圧軸上でシフト
したヒステリシスを示す(例えば、印加電界を増加して
第1の安定状態から第2の安定状態へ変化させた時と、
逆に印加電界を減少して第2の安定状態から第1の安定
状態へ変化させた時とで、光学透過率が変化する電圧が
異なる)ことから、高精細で高コントラストなマトリク
ス型液晶表示装置の実現が期待される。図1(c)には、
この液晶を用いた表示装置に図1(a)に示す3角波電界
を印加した時の光学透過率の変化を示す。三安定状態を
示す液晶相S*(3)を相系列に有する液晶化合物は、本
出願人の出願した特開平1−316367号、特開平1
−316372号、特開平1−316339号、特開平
2−28128号及び市橋等の特開平1−213390
号公報があり、また三安定状態を利用した液晶電気光学
装置としては本出願人は特開平2−40625号、特開
平2−153322号、特開平2−173724号にお
いて新しい提案を行っている。ところで、この3つの光
学的安定状態(三安定状態)を有する反強誘電性液晶を
用いる素子が、所望の電気光学応答を行うには、しきい
電圧以上の電圧をかける必要がある。現在用いられてい
るセルの厚さは2μm以上であり、これ以下のものはセ
ル厚を均一にするのが難しく、コストも高くなる。現在
知られている反強誘電性液晶の反強誘電相におけるしき
い電圧は2μmセル厚のセルに封入した場合20〜30
V以上である(つまり、10〜15v/μmの電界が必
要である)。また、駆動するときは、正と負の電圧を交
互に印加するので駆動回路は±30Vつまり耐電圧とし
ては60V以上が必要となる。このような電圧に耐えら
れるICは特殊なものとなり、安価な回路が組めなくな
る。そこで、しきい電圧が低い反強誘電性液晶が望まれ
ているが、しきい電圧が低い反強誘電性液晶に関する技
術の公開はまだない。一方、従来の反強誘電性液晶は、
その相系列が、
2. Description of the Related Art As a conventional liquid crystal element, a method called TN (twisted nematic) type is widely used (M. Schadt and W. Herfrich, Applied Physics Le.
tters. Vol. 18, No. 4, pp. 127-128). TN
Type liquid crystal device is a device in which nematic liquid crystal is sealed between a pair of transparent electrode substrates and arranged so that liquid crystal molecules are twisted by 90 ° between the upper and lower substrates, and the twisted structure disappears by application of an electric field to transmit light. Alternatively, it is cut off and the light and dark are displayed.
However, when the TN type liquid crystal element is applied to a liquid crystal display device having a matrix electrode structure in which a band-shaped scanning electrode group and a signal electrode group are arranged orthogonally, the response speed is slow,
The voltage-light transmittance characteristic does not have sufficient nonlinearity,
Therefore, there is a problem that the pixel density of the matrix cannot be increased, and the field of application is greatly limited under the present circumstances. Under such circumstances, ferroelectric liquid crystals synthesized by Meyer et al. Have been attracting attention (Le Jou
rnal de Physique, Volume 36, March 1975, L-6
9 to L-71). The most widely studied at present is a ferroelectric liquid crystal device having bistability (for example, Japanese Patent Publication No. 63-22287, U.S. Pat. No. 436).
7924). Bistable liquid crystals include optically active chiral smectic C phase (SmC *) or H phase (S
Liquid crystals with mH *) are known, which form a unique helical structure in the bulk state. When this is sandwiched between substrates that are separated by a distance short enough to suppress the spiral structure, the liquid crystal exhibits two stable states with respect to an electric field. That is, the liquid crystal is aligned in the first optically stable state with respect to the electric field in one direction and in the second optically stable state with respect to the electric field in the opposite direction. It can switch between two optically stable states. Moreover, this switching speed is extremely faster than that of the TN type liquid crystal element, and there is an advantage that it has the property of maintaining each stable state even when the electric field is removed. FIG. 1B shows a change in optical transmittance when a triangular wave electric field shown in FIG. 1A is applied to a display device using this liquid crystal. On the other hand, in recent years, an antiferroelectric liquid crystal having three optically stable states has been presented, and has been attracting attention as a liquid crystal exhibiting a better electro-optical effect (AD Cha.
ndani, E. Gorecka, Y. Ouchi, H. Takezoe and A. Fuku
da, Jpn. J. Appl. Phys., 28 (1989) L1265). This liquid crystal is in a first optical stable state when there is no electric field, in a second optical stable state when an electric field in one direction is present, and in a third optical stable state when an electric field is in the opposite direction. The three stable states can be switched at high speed depending on the orientation and strength of the electric field applied. Furthermore, the optical transmittance change between the three stable states with respect to the applied voltage shows a hysteresis shifted on the voltage axis (for example, when the applied electric field is increased to change from the first stable state to the second stable state). When,
Conversely, the voltage at which the optical transmittance changes differs when the applied electric field is reduced to change from the second stable state to the first stable state.) Realization of the device is expected. In FIG. 1 (c),
A change in optical transmittance when a triangular wave electric field shown in FIG. 1A is applied to a display device using this liquid crystal is shown. A liquid crystal compound having a liquid crystal phase S * (3) showing a tristable state in a phase series is disclosed in Japanese Patent Application Laid-Open Nos. 1-331667 and 1-316767 filed by the present applicant.
-316372, JP-A-1-316339, JP-A-2-28128, and Ichihashi et al. JP-A-1-213390.
The present applicant has made new proposals for liquid crystal electro-optical devices utilizing tristable states in JP-A-2-40625, JP-A-2-153322, and JP-A-2-173724. By the way, an element using an antiferroelectric liquid crystal having these three optically stable states (tristable states) needs to apply a voltage equal to or higher than the threshold voltage in order to achieve a desired electro-optical response. The thickness of the cell currently used is 2 μm or more, and if the thickness is less than 2 μm, it is difficult to make the cell thickness uniform and the cost becomes high. The threshold voltage in the antiferroelectric phase of the currently known antiferroelectric liquid crystal is 20 to 30 when enclosed in a cell having a cell thickness of 2 μm.
V or more (that is, an electric field of 10 to 15 v / μm is required). Further, when driving, a positive voltage and a negative voltage are alternately applied, so that the driving circuit needs ± 30 V, that is, a withstand voltage of 60 V or more. An IC that can withstand such a voltage becomes a special one, and an inexpensive circuit cannot be assembled. Therefore, an antiferroelectric liquid crystal having a low threshold voltage has been desired, but a technology regarding an antiferroelectric liquid crystal having a low threshold voltage has not been disclosed yet. On the other hand, the conventional antiferroelectric liquid crystal
The phase sequence is

【表1】 Iso :等方相 Sm A :スメクチック A相 SmC*α:スメクチックCα相 SmC* :スメクチックC相(強誘電相) SmC*γ:スメクチックCγ相 SmC* A:反強誘電相 上記の3種だけであり、これ以外の相系列をもつ反強誘
電性液晶は知られていない。
[Table 1] Iso: Isotropic phase Sm A: Smectic A phase SmC * α: Smectic Cα phase SmC *: Smectic C phase (ferroelectric phase) SmC * γ: Smectic Cγ phase SmC * A: Antiferroelectric phase However, there is no known antiferroelectric liquid crystal having a phase sequence other than this.

【0003】[0003]

【目的】本発明の目的は従来にない新しいタイプの相系
列、いわば第4のタイプの相系列をもつ液晶組成物を提
供する点にある。本発明のもう一つの目的は、低いしき
い値電圧で三安定状態を発現する反強誘電性液晶組成物
を提供する点にある。
[Object] It is an object of the present invention to provide a liquid crystal composition having a new type of phase series that has never existed before, that is, a fourth type of phase series. Another object of the present invention is to provide an antiferroelectric liquid crystal composition that exhibits a tristable state at a low threshold voltage.

【0004】[0004]

【構成】本発明は、(a)一般式(I)The present invention comprises (a) general formula (I)

【化7】 (式中、R1とR2は炭素数4〜18のn−アルキル基よ
りなる群から独立して選択された基であり、*は不斉炭
素を示す)で示される化合物80〜40重量部と、
(b)一般式(II)
[Chemical 7] (Wherein R 1 and R 2 are groups independently selected from the group consisting of n-alkyl groups having 4 to 18 carbon atoms, and * represents an asymmetric carbon) 80 to 40 parts by weight Department,
(B) General formula (II)

【化8】 (式中、R3とR4は炭素数4〜18のn−アルキル基よ
りなる群から独立して選択された基であり、*は不斉炭
素を示す)で示される化合物20〜60重量部とからな
る液晶組成物であって、それぞれの光学純度が80%e
e以上であり、一般式(I)の化合物がR体のときは一
般式(II)の化合物もR体であり、一般式(I)の化合
物がS体のときは一般式(II)の化合物もS体であるこ
とを特徴とする2つの温度領域において反強誘電相を発
現する液晶組成物に関する。
[Chemical 8] (Wherein R 3 and R 4 are groups independently selected from the group consisting of n-alkyl groups having 4 to 18 carbon atoms, and * represents an asymmetric carbon) 20 to 60 wt. And a liquid crystal composition having a optical purity of 80% e.
e or more, when the compound of general formula (I) is in the R form, the compound of general formula (II) is also in the R form, and when the compound of general formula (I) is in the S form, The present invention also relates to a liquid crystal composition exhibiting an antiferroelectric phase in two temperature regions, wherein the compound is also an S-form.

【0005】本発明の液晶組成物は、2つの温度領域に
おいて反強誘電相を発現する新規液晶組成物である。こ
の「2つの温度領域において反強誘電相を有する」と
は、液晶の相系列が
The liquid crystal composition of the present invention is a novel liquid crystal composition exhibiting an antiferroelectric phase in two temperature regions. This "having an antiferroelectric phase in two temperature regions" means that the phase sequence of the liquid crystal is

【表2】 を示す新しいタイプの相系列を示すことを意味する。い
いかえれば、反強誘電性相が高温側の温度領域と従来の
反強誘電性液晶にみられる温度領域(低温側)に2つ表
われる新しいタイプの相系列を意味する。
[Table 2] Is meant to indicate a new type of phase sequence. In other words, it means a new type of phase series in which the antiferroelectric phase appears in two regions, a high temperature side temperature region and a conventional antiferroelectric liquid crystal temperature region (low temperature side).

【0006】[0006]

【実施例】【Example】

実施例1 (イ)反強誘電相を示さない(強誘電相及びフェリ誘電
相は示す)式(III)で示されるR−(−)−4(1−
メチルヘプチルオキシカルボニル)フェニル 4′−オ
クチルオキシカルボキシビフェニル−4−カルボキシレ
ート〔以下R−(−)−MHPOOCBCと略記する〕
80重量部と、式(IV)で示される1つの反強誘電相を
もつR−(−)−4(1−メチルヘプチルオキシカルボ
ニル)フェニル 4′−オクチルカルボニルオキシビフ
ェニル−4−カルボキシレート〔以下R−(−)−MH
POCBCと略記する〕20重量部とを混合し、液晶組
成物を作った。この液晶組成物の相系列は、つぎのとお
りである。
Example 1 (a) R-(-)-4 (1-) represented by the formula (III) that does not exhibit antiferroelectric phase (indicates ferroelectric phase and ferrielectric phase)
Methylheptyloxycarbonyl) phenyl 4'-octyloxycarboxybiphenyl-4-carboxylate [abbreviated as R-(-)-MHPOOCBC hereinafter]
80 parts by weight and R-(−)-4 (1-methylheptyloxycarbonyl) phenyl 4′-octylcarbonyloxybiphenyl-4-carboxylate having one antiferroelectric phase represented by the formula (IV) [hereinafter referred to as R-(-)-MH
Abbreviated as POCBC] 20 parts by weight were mixed to prepare a liquid crystal composition. The phase sequence of this liquid crystal composition is as follows.

【表3】 この相系列から、本実施例では74.8℃〜74.6℃
において、新たな反強誘電相(SmC* A2)が出現し
た。
[Table 3] From this phase series, in the present embodiment, 74.8 ° C to 74.6 ° C.
At, a new antiferroelectric phase (SmC * A2) appeared.

【0007】(ロ)前記 R−(−)−MHPOOCBC 70重量部 R−(−)−MHPOCBC 30重量部 とを混合し、液晶組成物を作った。この液晶組成物の相
系列は、つぎのとおりである。
(B) 70 parts by weight of R-(-)-MHPOOCBC was mixed with 30 parts by weight of R-(-)-MHPOCBC to prepare a liquid crystal composition. The phase sequence of this liquid crystal composition is as follows.

【表4】 この相系列から、本実施例では82.6℃〜78.8℃
において高温側に反強誘電相が発現していることがわか
る。
[Table 4] From this phase series, in this example, 82.6 ° C to 78.8 ° C.
It can be seen that in Fig. 1, the antiferroelectric phase appears on the high temperature side.

【0008】(ハ)前記 R−(−)−MHPOOCBC 60重量部 R−(−)−MHPOCBC 40重量部 とを混合し、液晶組成物を作った。この液晶組成物の相
系列は、つぎのとおりである。
(C) 60 parts by weight of R-(-)-MHPOOCBC was mixed with 40 parts by weight of R-(-)-MHPOCBC to prepare a liquid crystal composition. The phase sequence of this liquid crystal composition is as follows.

【表5】 この相系列から、本実施例では86.9℃〜82.2℃
において高温側に反強誘電相が発現していることがわか
る。
[Table 5] From this phase series, in this example, 86.9 ° C to 82.2 ° C.
It can be seen that in Fig. 1, the antiferroelectric phase appears on the high temperature side.

【0009】(ニ)前記 R−(−)−MHPOOCBC 50重量部 R−(−)−MHPOCBC 50重量部 とを混合し、液晶組成物を作った。この液晶組成物の相
系列は、つぎのとおりである。
(D) 50 parts by weight of R-(-)-MHPOOCBC was mixed with 50 parts by weight of R-(-)-MHPOCBC to prepare a liquid crystal composition. The phase sequence of this liquid crystal composition is as follows.

【表6】 この相系列から、本実施例では89.2℃〜85.0℃
において高温側に反強誘電相が発現していることがわか
る。
[Table 6] From this phase series, in this example, 89.2 ° C to 85.0 ° C.
It can be seen that in Fig. 1, the antiferroelectric phase appears on the high temperature side.

【0010】(ホ)前記 R−(−)−MHPOOCBC 40重量部 R−(−)−MHPOCBC 60重量部 とを混合し、液晶組成物を作った。この液晶組成物の相
系列は、つぎのとおりである。
(E) 40 parts by weight of R-(-)-MHPOOCBC was mixed with 60 parts by weight of R-(-)-MHPOCBC to prepare a liquid crystal composition. The phase sequence of this liquid crystal composition is as follows.

【表7】 この相系列から、本実施例では88.2℃〜85.3℃
において高温側に反強誘電相が発現していることがわか
る。
[Table 7] From this phase series, in the present embodiment, 88.2 ° C to 85.3 ° C.
It can be seen that in Fig. 1, the antiferroelectric phase appears on the high temperature side.

【0011】実施例2 反強誘電相を示さない(強誘電相は示す)式(V)で示
されるR−(−)−4(1−メチルペンチルオキシカル
ボニル)フェニル 4′−デシルオキシカルボキシビフ
ェニル−4−カルボキシレート60重量部と式(IV)で
示される反強誘電相を示すR−(−)−MHPOCBC
40重量部とを混合し、液晶組成物を作った。この液晶
組成物の相系列は、つぎのとおりである。
Example 2 R-(-)-4 (1-methylpentyloxycarbonyl) phenyl 4'-decyloxycarboxybiphenyl of the formula (V) showing no antiferroelectric phase (the ferroelectric phase is shown) -4-Carboxylate 60 parts by weight and R-(-)-MHPOCBC showing an antiferroelectric phase represented by the formula (IV)
40 parts by weight were mixed to prepare a liquid crystal composition. The phase sequence of this liquid crystal composition is as follows.

【表8】 この相系列から、本実施例では86.4℃〜83.4℃
において、新たな反強誘電相(SmC* A2)が出現し
た。
[Table 8] From this phase series, in this example, 86.4 ° C to 83.4 ° C.
At, a new antiferroelectric phase (SmC * A2) appeared.

【0012】実施例3 図2には本発明を適用した液晶素子の全体構成図を示
す。液晶素子は、例えば10μmの間隔をおいて平行配
設された一対の電極基板1、2を有し、該一対の電極基
板1、2間に反強誘電性液晶6を密封してなる。電極基
板1、2は、透明のガラスあるいは樹脂よりなる透明基
板1c、2cの内側表面に、酸化インジウムまたは酸化
スズ等の透明導電膜よりなる透明電極1a、2aを形成
してなり、さらに、透明電極1a、2aの内側の、液晶
6と接触する表面には配向制御膜1b、2bが形成して
ある。反強誘電性液晶6としては、本発明の液晶化合物
の高温側の反強誘電相を用いる。4、5に互いに直交し
た偏光板を配設する。このようにして作った液晶素子に
三角波電圧を印加したところ明確なスイッチングを伴っ
た光学応答が得られた。
Embodiment 3 FIG. 2 shows an overall configuration diagram of a liquid crystal element to which the present invention is applied. The liquid crystal element has a pair of electrode substrates 1 and 2 arranged in parallel at an interval of, for example, 10 μm, and an antiferroelectric liquid crystal 6 is sealed between the pair of electrode substrates 1 and 2. The electrode substrates 1 and 2 are formed by forming transparent electrodes 1a and 2a made of a transparent conductive film such as indium oxide or tin oxide on the inner surfaces of transparent substrates 1c and 2c made of transparent glass or resin. Alignment control films 1b and 2b are formed on the surfaces inside the electrodes 1a and 2a that come into contact with the liquid crystal 6. As the antiferroelectric liquid crystal 6, the high temperature side antiferroelectric phase of the liquid crystal compound of the present invention is used. Polarizing plates which are orthogonal to each other are arranged at 4 and 5. When a triangular wave voltage was applied to the liquid crystal device thus produced, an optical response with clear switching was obtained.

【0013】[0013]

【効果】本発明により、新しいタイプの相系列をもつ液
晶組成物を提供することができた。本発明は、高温側の
反強誘電相を使用して駆動電位差が今までの反強誘電性
液晶組成物に較べて極めて低い値により液晶素子を駆動
させることができる。従って、反強誘電性液晶の有する
優れた電気光学効果を低電圧駆動で充分に発揮すること
ができるので、例えば大画面高精細表示素子、TV画像
表示素子、あるいは液晶光シャッタ等に適用されて、著
しい効果を発揮する。
[Effect] According to the present invention, a liquid crystal composition having a new type of phase series can be provided. The present invention can drive a liquid crystal element by using an antiferroelectric phase on the high temperature side, and a driving potential difference that is extremely lower than that of conventional antiferroelectric liquid crystal compositions. Therefore, the excellent electro-optical effect of the antiferroelectric liquid crystal can be sufficiently exerted by driving at a low voltage. Therefore, it is applied to a large-screen high-definition display device, a TV image display device, a liquid crystal optical shutter, or the like. , Exerts a remarkable effect.

【図面の簡単な説明】[Brief description of drawings]

【図1】(a)は、印加される三角波を(b)は二つの
安定状態を示す液晶の、(c)は、三安定状態を示す液
晶の各光学応答特性を示す。
1A shows optical response characteristics of an applied triangular wave, FIG. 1B shows optical response characteristics of a liquid crystal showing two stable states, and FIG. 1C shows optical response characteristics of a liquid crystal showing a tristable state.

【図2】本発明の実施例に用いた液晶素子の全体構成図
である。
FIG. 2 is an overall configuration diagram of a liquid crystal element used in an example of the present invention.

【符号の説明】[Explanation of symbols]

1 電極基板 1a 透明電極 1b 配向制御膜 1c 透明基板 2 電極基板 2a 透明電極 2b 配向制御膜 2c 透明基板 3 電源 4 偏光板 5 偏光板 6 反強誘電性液晶 DESCRIPTION OF SYMBOLS 1 Electrode substrate 1a Transparent electrode 1b Alignment control film 1c Transparent substrate 2 Electrode substrate 2a Transparent electrode 2b Alignment control film 2c Transparent substrate 3 Power supply 4 Polarizing plate 5 Polarizing plate 6 Antiferroelectric liquid crystal

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 (a)一般式(I) 【化1】 (式中、R1とR2は炭素数4〜18のn−アルキル基よ
りなる群から独立して選択された基であり、*は不斉炭
素を示す)で示される化合物80〜40重量部と、
(b)一般式(II) 【化2】 (式中、R3とR4は炭素数4〜18のn−アルキル基よ
りなる群から独立して選択された基であり、*は不斉炭
素を示す)で示される化合物20〜60重量部とからな
る液晶組成物であって、それぞれの光学純度が80%e
e以上であり、一般式(I)の化合物がR体のときは一
般式(II)の化合物もR体であり、一般式(I)の化合
物がS体のときは一般式(II)の化合物もS体であるこ
とを特徴とする2つの温度領域において反強誘電相を発
現する液晶組成物。
1. (a) General formula (I): (Wherein R 1 and R 2 are groups independently selected from the group consisting of n-alkyl groups having 4 to 18 carbon atoms, and * represents an asymmetric carbon) 80 to 40 parts by weight Department,
(B) General formula (II): (Wherein R 3 and R 4 are groups independently selected from the group consisting of n-alkyl groups having 4 to 18 carbon atoms, and * represents an asymmetric carbon) 20 to 60 wt. And a liquid crystal composition having a optical purity of 80% e.
e or more, when the compound of general formula (I) is in the R form, the compound of general formula (II) is also in the R form, and when the compound of general formula (I) is in the S form, A liquid crystal composition exhibiting an antiferroelectric phase in two temperature regions, wherein the compound is also an S-form.
【請求項2】 式(III) 【化3】 で示される4−(1−メチルヘプチルオキシカルボニ
ル)フェニル 4′−オクチルオキシカルボキシビフェ
ニル−4−カルボキシレート80〜40重量部と、式
(IV) 【化4】 で示される4−(1−メチルヘプチルオキシカルボニ
ル)フェニル 4′−オクチルカルボニルオキシビフェ
ニル−4−カルボキシレート20〜60重量部よりなる
液晶組成物であって、それぞれの光学純度が80%ee
以上であり、式(III)の化合物がR体のとき式(IV)
の化合物もR体であり、式(III)の化合物がS体のと
き式(IV)の化合物もS体であることを特徴とする2つ
の温度領域で反強誘電相を発現する液晶組成物。
2. The formula (III): 80 to 40 parts by weight of 4- (1-methylheptyloxycarbonyl) phenyl 4'-octyloxycarboxybiphenyl-4-carboxylate represented by the formula (IV) A liquid crystal composition consisting of 20 to 60 parts by weight of 4- (1-methylheptyloxycarbonyl) phenyl 4′-octylcarbonyloxybiphenyl-4-carboxylate represented by the formula:
And above, when the compound of formula (III) is in the R form, formula (IV)
The compound of formula (I) is also in the R form, and the compound of formula (III) is also in the form of S when the compound of formula (III) is in the S form. A liquid crystal composition exhibiting an antiferroelectric phase in two temperature regions. .
【請求項3】 式(V) 【化5】 で示される4−(1−メチルペンチルオキシカルボニ
ル)フェニル 4′−デシルオキシカルボキシビフェニ
ル−4−カルボキシレート80〜40重量部と、式(I
V) 【化6】 で示される4−(1−メチルヘプチルオキシカルボニ
ル)フェニル 4′−オクチルカルボニルオキシビフェ
ニル−4−カルボキシレート20〜60重量部よりなる
液晶組成物であって、それぞれの光学純度が80%ee
以上であり、式(V)の化合物がR体のときは式(IV)
の化合物もR体であり、式(V)の化合物がS体のとき
は式(IV)の化合物もS体であることを特徴とする2つ
の温度領域で反強誘電相を発現する液晶組成物。
3. Formula (V): 4- (1-methylpentyloxycarbonyl) phenyl 4′-decyloxycarboxybiphenyl-4-carboxylate represented by the formula (I
V) [Chemical 6] A liquid crystal composition consisting of 20 to 60 parts by weight of 4- (1-methylheptyloxycarbonyl) phenyl 4′-octylcarbonyloxybiphenyl-4-carboxylate represented by the formula:
When the compound of formula (V) is in the R form, the formula (IV)
The compound of formula (R) is also in the R form, and when the compound of formula (V) is in the form of S, the compound of formula (IV) is also in the form of S. A liquid crystal composition exhibiting an antiferroelectric phase in two temperature regions object.
JP21228493A 1992-08-06 1993-08-04 Liquid crystal composition Pending JPH06192657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21228493A JPH06192657A (en) 1992-08-06 1993-08-04 Liquid crystal composition

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP23143292 1992-08-06
JP4-231432 1992-08-06
JP21228493A JPH06192657A (en) 1992-08-06 1993-08-04 Liquid crystal composition

Publications (1)

Publication Number Publication Date
JPH06192657A true JPH06192657A (en) 1994-07-12

Family

ID=26519122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21228493A Pending JPH06192657A (en) 1992-08-06 1993-08-04 Liquid crystal composition

Country Status (1)

Country Link
JP (1) JPH06192657A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6267910B1 (en) 1994-04-18 2001-07-31 Nippon Soken, Inc. Antiferroelectric liquid crystal composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6267910B1 (en) 1994-04-18 2001-07-31 Nippon Soken, Inc. Antiferroelectric liquid crystal composition

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