JPH06188203A - Crystal growth device - Google Patents
Crystal growth deviceInfo
- Publication number
- JPH06188203A JPH06188203A JP33998392A JP33998392A JPH06188203A JP H06188203 A JPH06188203 A JP H06188203A JP 33998392 A JP33998392 A JP 33998392A JP 33998392 A JP33998392 A JP 33998392A JP H06188203 A JPH06188203 A JP H06188203A
- Authority
- JP
- Japan
- Prior art keywords
- crystal growth
- crystal
- substrate
- sample holder
- needlelike
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Chemical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、電子の１次元閉じ込め
による量子効果を用いる半導体デバイスの製造に好適な
光照射機能を有する結晶成長に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to crystal growth having a light irradiation function suitable for manufacturing a semiconductor device using a quantum effect due to one-dimensional confinement of electrons.
【０００２】[0002]
【従来の技術】従来の針状（１次元細線）成長は、真
空、第３５巻、４９０頁（１９９２）に記載されている
ように通常のＭＯＣＶＤ膜成長条件の低温領域において
実現している。2. Description of the Related Art Conventional needle-like (one-dimensional thin line) growth is realized in a low temperature region of normal MOCVD film growth conditions as described in vacuum, vol. 35, page 490 (1992).
【０００３】一方、半導体結晶を高速に成長させるため
に、従来技術では、ジャーナル・オブ・クリスタル・グ
ロース ３１巻 ２０−３０頁（１９５７）(J．of Cry
stalGrowth, Vol.３１，ｐ.２０−３０（１９７５）に
も記載されているように、成長種に金属等の触媒を混入
し基板を加熱するか、あるいはマテリアル・リサーチ・
ソサエティ・シンポジューム・プロシーディング ２２
２巻 １２１−１３２頁（１９９１）（Mat. Res. Soc.
Symp. Proc. Vol.２２２，ｐ.１２１−１３２（１９９
１）に記されているように、基板上側から光を照射する
ことにより、成長表面を活性化している。On the other hand, in order to grow a semiconductor crystal at a high speed, in the prior art, Journal of Crystal Growth 31: 20-30 (1957) (J. of Cry
As described in stalGrowth, Vol.31, p.20-30 (1975), a catalyst such as a metal is mixed with the growing seeds to heat the substrate, or material research.
Society Symposium Proceeding 22
Vol. 2, pp. 121-132 (1991) (Mat. Res. Soc.
Symp. Proc. Vol. 222, p. 121-132 (199
As described in 1), the growth surface is activated by irradiating light from the upper side of the substrate.
【０００４】[0004]
【発明が解決しようとする課題】上記従来技術では、よ
り細い針状結晶を成長させようとすると、目的とする半
導体デバイスに有効な量子効果を与えるためには成長温
度を低く設定せねばならないが、そうすると、成長速度
が著しく低くなり、量産に供することが困難となる。ま
た、低温で成長させるために、基板上側から光照射を行
なうと、原料ガス等による窓汚染のため、安定で持続的
な結晶成長が困難となる。In the above-mentioned prior art, when a finer needle crystal is grown, the growth temperature must be set low in order to give an effective quantum effect to the target semiconductor device. Then, the growth rate becomes extremely low, which makes it difficult to use for mass production. Further, when light irradiation is performed from the upper side of the substrate in order to grow at a low temperature, stable and continuous crystal growth becomes difficult due to window contamination by the source gas and the like.
【０００５】本発明の目的は、低温においても高速、安
定、かつ持続的に、針状結晶を成長させることである。An object of the present invention is to grow needle crystals at high speed, stably and continuously even at low temperature.
【０００６】[0006]
【課題を解決するための手段】上記目的は、基板裏側
（成長表面の反対側）に、基板母体のバンドギャップよ
りも小さなエネルギーを有する光量子を放射する光源を
装備する結晶成長装置とすることにより達成される。The above object is to provide a crystal growth apparatus equipped with a light source for emitting photons having an energy smaller than the band gap of the substrate matrix on the back side of the substrate (the side opposite to the growth surface). To be achieved.
【０００７】[0007]
【作用】基板裏側の光源の光は、光量子エネルギーが基
板母体のバンドギャップより小さいので、基板母体に吸
収されることなく、成長表面まで到達する。このことに
より、基板は直接加熱されないので、低温条件を維持し
やすい。表面に到達した光は、表面の一部のダイマー
（未結合手（ダングリングボンド）間の結合）により吸
収される。なぜなら、これらのダイマーの結合性および
反結合性準位は基板母体のバンドギャップ内に存在する
からである。光吸収の結果として反結合性準位に電子が
入り、ダイマーが分解、ダングリングボンドが生成し、
表面は活性化される。ここで、光照射窓は、密閉された
試料ホルダーの内側（基板下部）にあり、汚染は少な
い。また、上記の光源から発せられた光量子のエネルギ
ーの大きさは、成長表面の中で、針状結晶成長領域のダ
イマーを切るには十分であるが、その他の大面積領域の
ダイマーを切るには不十分である。これは、次に示す理
由による。針状結晶成長領域の表面ダイマーの分解状態
では、各原子が成長領域の境界の方向、すなわち、水平
方向への緩和の自由度を有するために、構造の緩和によ
り、分解状態は大きく安定化される。したがって、針状
結晶成長領域のダイマーは、比較的小さなエネルギーで
分解することが可能であり、そのエネルギーは、バンド
ギャップよりも小さい。それに対して、その他の大面積
領域においては、ダイマー分解後の原子の緩和の自由度
が小さいので、ダイマー分解エネルギーは、バンドギャ
ップと同程度か、それよりも大きい。よって、光裏照射
によって活性化された針状結晶領域の上のみで原料ガス
が反応、堆積し、初期に与えた針状結晶成長領域と同一
の断面積（太さ）を有する針状結晶を製造することがで
きる。The light from the light source on the back side of the substrate reaches the growth surface without being absorbed by the substrate matrix because the photon energy is smaller than the band gap of the substrate matrix. As a result, the substrate is not directly heated, and it is easy to maintain the low temperature condition. The light that reaches the surface is absorbed by a part of the dimer (bonding between dangling bonds) of the surface. This is because the binding and antibonding levels of these dimers exist within the band gap of the substrate matrix. As a result of light absorption, electrons enter the antibonding level, dimers decompose, and dangling bonds are generated.
The surface is activated. Here, the light irradiation window is inside the sealed sample holder (lower part of the substrate), and there is little contamination. Further, the magnitude of the energy of the photons emitted from the above light source is sufficient to cut the dimer in the acicular crystal growth region in the growth surface, but to cut the dimer in other large-area regions. Is insufficient. This is for the following reason. In the decomposed state of the surface dimer in the acicular crystal growth region, each atom has a degree of freedom of relaxation in the direction of the boundary of the growth region, that is, in the horizontal direction, so the structural relaxation greatly stabilizes the decomposed state. It Therefore, the dimer in the acicular crystal growth region can decompose with a relatively small energy, and the energy is smaller than the band gap. On the other hand, in other large-area regions, the degree of freedom of relaxation of atoms after dimer decomposition is small, and thus the dimer decomposition energy is about the same as or larger than the band gap. Therefore, the raw material gas reacts and deposits only on the needle-like crystal regions activated by the light back irradiation, and needle-like crystals having the same cross-sectional area (thickness) as the initially given needle-like crystal growth region are formed. It can be manufactured.
【０００８】[0008]
【実施例】本発明による針状結晶成長の実施例を、Ｇａ
Ａｓ針状結晶成長について実施例１に、ＩｎＡｓ針状結
晶成長について実施例２に、Ｓｉ針状結晶成長について
実施例３に示す。EXAMPLE An example of acicular crystal growth according to the present invention is Ga
Example 1 shows As needle crystal growth, Example 2 shows InAs needle crystal growth, and Example 3 shows Si needle crystal growth.
【０００９】（実施例１）先ず、本発明の針状結晶成長
装置の試料ホルダー部分の構造の１例を図１を用いて説
明する。１０１は試料ホルダーであり、１０２は試料
（結晶成長の基板）であり、１０３は光を透過し熱を遮
蔽する試料ホルダーの光照射窓であり、１０４は基板母
体のバンドギャップより小さなエネルギーの光量子を発
する光源である。１０１の内部に結晶成長供給ガスは侵
入出来ず、１０１の内部に１０４が収納されている。１
０４は、その光が１０３を通して１０２に照射されるよ
うに、配置されている。１０３は、１０４から１０２へ
の熱の伝導および対流を防止するとともに、１０２を加
熱し得る（即ち、１０２が吸収し得る）熱線を遮断する
機能を有する。したがって、１０４から発せられ１０２
の背面に到達する物は基板母体のバンドギャップより小
さなエネルギーの光量子のみである。これらの光量子
は、さらに、吸収されずに１０２の内部を透過し、１０
２の表面（成長表面）に到達する。１０３の例として
は、２枚のＫＢｒ板の間に真空層を配置した透明熱遮蔽
板が上げられる。Example 1 First, an example of the structure of the sample holder portion of the needle-shaped crystal growth apparatus of the present invention will be described with reference to FIG. Reference numeral 101 is a sample holder, 102 is a sample (crystal growth substrate), 103 is a light irradiation window of the sample holder that transmits light and shields heat, and 104 is a photon of energy smaller than the band gap of the substrate matrix. Is a light source that emits. The crystal growth supply gas cannot enter the inside of 101, and 104 is stored inside 101. 1
04 is arranged so that the light is irradiated to 102 through 103. 103 has a function of preventing heat conduction and convection from 104 to 102, and a function of blocking a heat ray that can heat 102 (that is, can be absorbed by 102). Therefore, it is emitted from 104
The only thing that reaches the back surface of is a photon with energy smaller than the band gap of the substrate matrix. These photons further penetrate the interior of 102 without being absorbed and
2 surface (growth surface) is reached. As an example of 103, a transparent heat shield plate in which a vacuum layer is arranged between two KBr plates is raised.
【００１０】次に図２を用いて、従来の針状結晶成長装
置の試料ホルダー部分の構造を図２を用いて説明する。
２０１は試料ホルダーであり、２０２は試料であり、２
０３はヒーターである。２０３から発せられた熱線およ
び光は、２０１が熱線や光を透過しないために、２０１
で熱（振動）に変換され、２０２に伝えられる。したが
って、２０３から発せられ２０２の背面に到達するもの
は、熱（振動）エネルギーのみであり、そのエネルギー
は成長表面活性化のためだけでなく、２０２全体を加熱
するために消費されることになる。Next, the structure of the sample holder portion of the conventional needle crystal growth apparatus will be described with reference to FIG. 2 with reference to FIG.
201 is a sample holder, 202 is a sample, and 2
03 is a heater. The heat ray and the light emitted from 203 are 201, since 201 does not transmit the heat ray and the light.
Is converted into heat (vibration) and transmitted to 202. Therefore, what is emitted from 203 and reaches the back surface of 202 is only heat (vibration) energy, which is consumed not only for activation of the growth surface but also for heating the whole 202. .
【００１１】図３に針状結晶成長装置の成長室（試料ホ
ルダー部分を含む）の概略を示す。３０１は、結晶成長
室であり、３０２は試料ホルダーであり、３０３はガス
供給口であり、３０４は排気口である。FIG. 3 schematically shows a growth chamber (including a sample holder portion) of the needle crystal growth apparatus. 301 is a crystal growth chamber, 302 is a sample holder, 303 is a gas supply port, and 304 is an exhaust port.
【００１２】次に、ＧａＡｓ針状結晶成長の方法とその
結果を説明する。まず、本発明の試料ホルダーの中にＧ
ａＡｓ結晶のバンドギャップ（１．４２ｅＶ）よりも小
さなエネルギーを有する光量子を放射する光源を用意す
る。ただし、光源の光量子エネルギーの最大値は１．２
８ｅＶである。光源の例としては、Ｎｄ3+：ＹＡＧレー
ザーが上げられる成長室（図３）として、本発明の試料
ホルダー（図１）および従来の試料ホルダー（図２）を
有する成長室を準備する。各々のホルダー上にＧａＡｓ
基板を装着し、そのＧａＡｓ（１１１）面上に、真空下
で半径１００ｎｍのＧａＡｓクラスター（成長種）を１
マイクロメータ四方に１個の割合で付着させ、針状結晶
成長基板とした。各々の試料ホルダー上の基板の温度を
ヒータを用いて３００℃とし、本発明の試料ホルダーの
光源を点灯し、成長室圧力を２×１０4Ｐａとして、ガ
ス供給口から、成長原料のトリメチルガリウム（（ＣＨ
3）3Ｇａ）：ＴＭＧ）およびアルシン（ＡｓＨ3）を、
各々、１ｃｃ／ｍｉｎおよび５ｃｃ／ｍｉｎにて、キャ
リヤガスの水素（Ｈ2）とともに３分間供給した。その
後、従来の試料ホルダー上の試料表面をＳＥＭで観察し
たところ、針状結晶は認められなかった。他方、本発明
の試料ホルダー上の試料表面をＳＥＭで観察したとこ
ろ、直径約１００ｎｍの針状結晶が認められた。Next, a method of GaAs needle crystal growth and its result will be described. First, in the sample holder of the present invention, G
A light source that emits photons having an energy smaller than the band gap (1.42 eV) of the aAs crystal is prepared. However, the maximum value of photon energy of the light source is 1.2
It is 8 eV. As an example of the light source, a growth chamber having a sample holder of the present invention (FIG. 1) and a conventional sample holder (FIG. 2) is prepared as a growth chamber (FIG. 3) in which a Nd 3 +: YAG laser is raised. GaAs on each holder
A substrate is mounted, and GaAs clusters (growing seeds) with a radius of 100 nm are grown on the GaAs (111) surface under vacuum.
One needle was attached to each side of the micrometer to obtain a needle-shaped crystal growth substrate. The temperature of the substrate on each sample holder was set to 300 ° C. using a heater, the light source of the sample holder of the present invention was turned on, the growth chamber pressure was set to 2 × 10 4 Pa, and trimethylgallium as a growth raw material was supplied from the gas supply port. ((CH
3 ) 3 Ga): TMG) and arsine (AsH 3 )
It was supplied with hydrogen (H 2 ) as a carrier gas for 3 minutes at 1 cc / min and 5 cc / min, respectively. After that, when the surface of the sample on the conventional sample holder was observed by SEM, needle crystals were not observed. On the other hand, when the surface of the sample on the sample holder of the present invention was observed by SEM, needle crystals having a diameter of about 100 nm were recognized.
【００１３】また、上記条件で結晶成長を数十回行った
が、光照射窓１０３の光透過率の変化はほとんど認めら
れなかった。Further, although crystal growth was carried out several tens of times under the above conditions, almost no change in light transmittance of the light irradiation window 103 was observed.
【００１４】（実施例２）本実施例で用いる本発明の針
状結晶成長装置の試料ホルダー部分の構造と従来の針状
結晶成長装置の試料ホルダー部分の構造、および針状結
晶成長装置の成長室（試料ホルダー部分を含む）の構造
の概略は、実施例１と同様である。(Embodiment 2) The structure of the sample holder part of the acicular crystal growth apparatus of the present invention used in this example, the structure of the sample holder part of the conventional acicular crystal growth apparatus, and the growth of the acicular crystal growth apparatus. The outline of the structure of the chamber (including the sample holder portion) is similar to that of the first embodiment.
【００１５】次に、ＩｎＡｓ針状結晶成長の方法とその
結果を説明する。まず、本発明の試料ホルダーの中にＩ
ｎＡｓ結晶のバンドギャップ（０．３６ｅＶ）よりも小
さなエネルギーを有する光量子を放射する光源を用意す
る。ただし、光源の光量子エネルギーの最大値は０．３
２ｅＶである。光源の例としては、３．９μｍ干渉フィ
ルターを出射口に装着したフッ化重水素レーザーが上げ
られる。成長室（図３）として、本発明の試料ホルダー
（図１）および従来の試料ホルダー（図２）を有する成
長室を準備する。各々のホルダー上にＩｎＡｓ基板を装
着し、そのＩｎＡｓ（１１１）面上に、真空下で直径５
０ｎｍのＩｎＡｓクラスター（成長種）を１マイクロメ
ータ四方に１個の割合で付着させ、針状結晶成長基板と
した。各々の試料ホルダー上の基板の温度をヒータを用
いて３００℃とし、本発明の試料ホルダーの光源を点灯
し、成長室圧力を２×１０4Ｐａとして、ガス供給口か
ら、成長原料のトリメチルインジウム（（ＣＨ3）3Ｉ
ｎ）：ＴＭＩ）およびアルシン（ＡｓＨ3）を、各々、
１ｃｃ／ｍｉｎおよび５ｃｃ／ｍｉｎにて、キャリヤガ
スの水素（Ｈ2）とともに３分間供給した。その後、従
来の試料ホルダー上の試料表面をＳＥＭで観察したとこ
ろ、針状結晶は認められなかった。他方、本発明の試料
ホルダー上の試料表面をＳＥＭで観察したところ、直径
約５０ｎｍの針状結晶が認められた。Next, the method of InAs needle-like crystal growth and its results will be described. First, in the sample holder of the present invention, I
A light source that emits photons having an energy smaller than the band gap (0.36 eV) of the nAs crystal is prepared. However, the maximum value of photon energy of the light source is 0.3
It is 2 eV. As an example of the light source, a deuterium fluoride laser equipped with a 3.9 μm interference filter at the emission port can be used. As the growth chamber (FIG. 3), a growth chamber having the sample holder of the present invention (FIG. 1) and the conventional sample holder (FIG. 2) is prepared. An InAs substrate was mounted on each holder, and the diameter of the InAs (111) surface was 5 under vacuum.
0 nm InAs clusters (growing seeds) were attached at a rate of 1 per 1 micrometer square to obtain a needle crystal growth substrate. The temperature of the substrate on each sample holder was set to 300 ° C. using a heater, the light source of the sample holder of the present invention was turned on, the growth chamber pressure was set to 2 × 10 4 Pa, and trimethylindium as a growth raw material was supplied from the gas supply port. ((CH 3 ) 3 I
n): TMI) and arsine (AsH 3 ) respectively,
At 1 cc / min and 5 cc / min, hydrogen (H 2 ) as a carrier gas was supplied for 3 minutes. After that, when the surface of the sample on the conventional sample holder was observed by SEM, needle crystals were not observed. On the other hand, when the surface of the sample on the sample holder of the present invention was observed by SEM, needle crystals having a diameter of about 50 nm were recognized.
【００１６】また、上記条件で結晶成長を数十回行った
が、光照射窓１０３の光透過率の変化はほとんどなかっ
た。Further, although crystal growth was carried out several tens of times under the above-mentioned conditions, there was almost no change in the light transmittance of the light irradiation window 103.
【００１７】（実施例３）本実施例で用いる本発明の針
状結晶成長装置の試料ホルダー部分の構造と従来の針状
結晶成長装置の試料ホルダー部分の構造、および針状結
晶成長装置の成長室（試料ホルダー部分を含む）の構造
の概略は、実施例１と同様である。(Embodiment 3) The structure of the sample holder portion of the needle-shaped crystal growth apparatus of the present invention used in this embodiment, the structure of the sample holder portion of the conventional needle-shaped crystal growth apparatus, and the growth of the needle-shaped crystal growth apparatus. The outline of the structure of the chamber (including the sample holder portion) is similar to that of the first embodiment.
【００１８】次に、Ｓｉ針状結晶成長の方法とその結果
を説明する。まず、本発明の試料ホルダーの中にＳｉ結
晶のバンドギャップ（１．１２ｅＶ）よりも小さなエネ
ルギーを有する光量子を放射する光源を用意する。ただ
し、光源の光量子エネルギーの最大値は１．０８ｅＶで
ある。光源の例としては、ヘリウム・ネオンレーザーが
上げられる。成長室（図３）として、本発明の試料ホル
ダー（図１）および従来の試料ホルダー（図２）を有す
る成長室を準備する。各々のホルダー上にＳｉ基板を装
着し、そのＳｉ（１１１）面上に、真空下で直径２００
ｎｍのＳｉクラスター（成長種）を１マイクロメータ四
方に１個の割合で付着させ、針状結晶成長基板とした。
各々の試料ホルダー上の基板の温度をヒータを用いて３
００℃とし、本発明の試料ホルダーの光源を点灯し、成
長室圧力を２×１０4Ｐａとして、ガス供給口から、成
長原料の塩化シラン（ＳｉＣｌ4）を５ｃｃ／ｍｉｎに
てキャリヤガスの水素（Ｈ2）とともに３分間供給し
た。その後、従来の試料ホルダー上の試料表面をＳＥＭ
で観察したところ、針状結晶は認められなかった。他
方、本発明の試料ホルダー上の試料表面をＳＥＭで観察
したところ、直径約２００ｎｍの針状結晶が認められ
た。Next, the method of Si needle crystal growth and the result thereof will be described. First, a light source that emits photons having energy smaller than the band gap (1.12 eV) of Si crystal is prepared in the sample holder of the present invention. However, the maximum value of the photon energy of the light source is 1.08 eV. An example of the light source is a helium-neon laser. As the growth chamber (FIG. 3), a growth chamber having the sample holder of the present invention (FIG. 1) and the conventional sample holder (FIG. 2) is prepared. A Si substrate is mounted on each holder, and the Si (111) surface is vacuum-treated to have a diameter of 200
Si clusters (growth seeds) having a thickness of 1 nm were attached at a rate of 1 per 1 micrometer square to obtain a needle-shaped crystal growth substrate.
Use the heater to set the temperature of the substrate on each sample holder to 3
The temperature is set to 00 ° C., the light source of the sample holder of the present invention is turned on, the growth chamber pressure is set to 2 × 10 4 Pa, and silane chloride (SiCl 4 ) as a growth raw material is supplied as hydrogen as a carrier gas from a gas supply port at 5 cc / min. Supply with (H 2 ) for 3 minutes. Then, SEM the sample surface on the conventional sample holder.
No needle crystals were observed as a result of observation. On the other hand, when the surface of the sample on the sample holder of the present invention was observed by SEM, needle crystals having a diameter of about 200 nm were recognized.
【００１９】[0019]
【発明の効果】本発明によれば、比較的低温においても
高速、安定、かつ持続的に、針状結晶を成長させること
ができる。According to the present invention, acicular crystals can be grown rapidly, stably and continuously even at a relatively low temperature.
【図１】本発明の針状結晶成長装置の試料ホルダー部分
の断面構造図である。FIG. 1 is a cross-sectional structural diagram of a sample holder portion of an acicular crystal growth apparatus of the present invention.
【図２】従来の針状結晶成長装置の試料ホルダー部分の
断面構造図である。FIG. 2 is a cross-sectional structural diagram of a sample holder portion of a conventional needle-shaped crystal growth device.
【図３】針状結晶成長装置の成長室（試料ホルダー部分
を含む）の概略断面図である。FIG. 3 is a schematic cross-sectional view of a growth chamber (including a sample holder portion) of a needle crystal growth apparatus.
１０１…試料ホルダー、１０２…試料（結晶成長の基
板）、１０３…光を透過し熱を遮蔽する試料ホルダーの
光照射窓、１０４…基板母体のバンドギャップより小さ
なエネルギーの光量子を放射する光源。２０１…試料ホ
ルダー、２０２…試料、２０３…ヒーター。３０１…結
晶成長室、３０２…試料ホルダー、３０３…ガス供給
口、３０４…排気口。101 ... Sample holder, 102 ... Sample (crystal growth substrate), 103 ... Light irradiation window of sample holder that transmits light and shields heat, 104 ... Light source that emits photons with energy smaller than the band gap of the substrate matrix. 201 ... Sample holder, 202 ... Sample, 203 ... Heater. 301 ... Crystal growth chamber, 302 ... Sample holder, 303 ... Gas supply port, 304 ... Exhaust port.
フロントページの続き (72)発明者 藤崎 芳久 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内 (72)発明者 小野 哲郎 東京都国分寺市東恋ケ窪１丁目280番地 株式会社日立製作所中央研究所内Front page continuation (72) Inventor Yoshihisa Fujisaki 1-280 Higashi Koikeku, Kokubunji, Tokyo Inside Hitachi Central Research Laboratory (72) Inventor Tetsuro Ono 1-280 Higashi Koikeku, Tokyo Kokubunji City Inside Hitachi Research Laboratory
Claims (2)
対側）に、基板母体材料のバンドギャップよりも小さな
エネルギーを有する光量子を放射する光源を備えたこと
を特徴とする結晶成長装置。1. A crystal growth apparatus comprising a light source for emitting photons having an energy smaller than a band gap of a substrate host material, on the back side of a sample substrate (that is, on the opposite side of a growth surface).
に配置されていることを特徴とする請求項１記載の結晶
成長装置。2. The crystal growth apparatus according to claim 1, wherein the light source is arranged inside a holder of the sample substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33998392A JPH06188203A (en) | 1992-12-21 | 1992-12-21 | Crystal growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33998392A JPH06188203A (en) | 1992-12-21 | 1992-12-21 | Crystal growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06188203A true JPH06188203A (en) | 1994-07-08 |
Family
ID=18332626
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33998392A Pending JPH06188203A (en) | 1992-12-21 | 1992-12-21 | Crystal growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06188203A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376345B1 (en) | 1998-07-24 | 2002-04-23 | Hitachi Ltd. | Process for manufacturing semiconductor integrated circuit device |
-
1992
- 1992-12-21 JP JP33998392A patent/JPH06188203A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6376345B1 (en) | 1998-07-24 | 2002-04-23 | Hitachi Ltd. | Process for manufacturing semiconductor integrated circuit device |
| US6458674B1 (en) | 1998-07-24 | 2002-10-01 | Hitachi, Ltd. | Process for manufacturing semiconductor integrated circuit device |
| US6531400B2 (en) | 1998-07-24 | 2003-03-11 | Hitachi, Ltd. | Process for manufacturing semiconductor integrated circuit device |
| US6800557B2 (en) | 1998-07-24 | 2004-10-05 | Renesas Technology Corp. | Process for manufacturing semiconductor integrated circuit device |
| US7510970B2 (en) | 1998-07-24 | 2009-03-31 | Renesas Technology Corp. | Process for manufacturing semiconductor integrated circuit device |
| US7659201B2 (en) | 1998-07-24 | 2010-02-09 | Renesas Technology Corp. | Process for manufacturing semiconductor integrated circuit device |
| US8129275B2 (en) | 1998-07-24 | 2012-03-06 | Renesas Electronics Corporation | Process for manufacturing semiconductor integrated circuit device |
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