JPH06180399A - Multilayer film mirror for x-ray, reflective x-ray mask and fabrication thereof - Google Patents
Multilayer film mirror for x-ray, reflective x-ray mask and fabrication thereofInfo
- Publication number
- JPH06180399A JPH06180399A JP43A JP33473592A JPH06180399A JP H06180399 A JPH06180399 A JP H06180399A JP 43 A JP43 A JP 43A JP 33473592 A JP33473592 A JP 33473592A JP H06180399 A JPH06180399 A JP H06180399A
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- Japan
- Prior art keywords
- multilayer film
- mirror
- layer
- ray
- multilayer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、Ｘ線投影露光やＸ線顕
微鏡等のＸ線の波長領域での反射光学系に用いられるＸ
線用多層膜ミラー、このＸ線用多層膜ミラーを用いたＸ
線投影露光における反射型マスクおよびＸ線用多層膜ミ
ラーの製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an X-ray used for a reflection optical system in the X-ray wavelength region such as an X-ray projection exposure and an X-ray microscope.
X-ray multilayer mirror, X using this X-ray multilayer mirror
The present invention relates to a method of manufacturing a reflection type mask and a multilayer film mirror for X-ray in line projection exposure.
【０００２】[0002]
【従来の技術】この種のＸ線用多層膜ミラーは、屈折率
の大きく異なる二種類の物質を基板上に数Å〜数十Åの
厚さで交互に積層させたものである。Ｘ線用多層膜ミラ
ーは、多数の界面で反射した光の干渉効果を利用したも
のであり、多層膜の１周期の長さ（周期長）をｄ、Ｘ線
の入射角をθ、Ｘ線の波長をλとすると、ブラッグの条
件（２ｄ sinθ＝ｎλ）を満たすとき高い反射率を示
す。2. Description of the Related Art A multilayer film mirror for X-rays of this type is one in which two kinds of substances having greatly different refractive indexes are alternately laminated on a substrate in a thickness of several Å to several tens of Å. The multilayer mirror for X-rays utilizes the interference effect of light reflected at a large number of interfaces. The length of one cycle (cycle length) of the multilayer film is d, the incident angle of X-rays is θ, and the X-rays are X-rays. Where λ is the wavelength of, a high reflectance is exhibited when the Bragg condition (2d sin θ = nλ) is satisfied.
【０００３】図１１は従来のＸ線用多層膜ミラーを示す
概略断面図である。この図において、Ｘ線多層膜ミラー
は基板２の表面５上に形成された多層膜１を備え、この
多層膜１は、屈折率（すなわち真空中の屈折率に対する
Ｘ線領域の波長を有する光の屈折率の比）の大きく異な
る二種類の物質からなる層１９、２０が交互に形成され
てなる。従来のＸ線用多層膜ミラーは、多層膜１の界面
４（つまり層１９、２０の界面）がミラーの表面３に平
行であるため、ミラーの表面３の法線Ｎに対して対称的
な方向にのみＸ線を反射する。すなわち、入射Ｘ線６と
反射Ｘ線７は法線Ｎを挾んで対称な位置にある。従っ
て、多層膜ミラーは、可視光に対して一般に用いられる
鏡と同様に、表面の形状が平面の場合は光の進む向きを
変えたり、曲面の場合は光の広がりを変えたりすること
に利用される。さらに、曲面の多層膜ミラーを組み合わ
せることにより、Ｘ線用の顕微鏡や投影露光の結像光学
系にも応用される。FIG. 11 is a schematic sectional view showing a conventional X-ray multilayer film mirror. In this figure, an X-ray multilayer mirror comprises a multilayer film 1 formed on a surface 5 of a substrate 2, which multilayer film 1 has a refractive index (that is, light having a wavelength in the X-ray region with respect to a refractive index in vacuum). Layers 19 and 20 composed of two kinds of substances having greatly different refractive index ratios are alternately formed. In the conventional multilayer mirror for X-rays, since the interface 4 of the multilayer film 1 (that is, the interface between the layers 19 and 20) is parallel to the surface 3 of the mirror, it is symmetrical with respect to the normal line N of the surface 3 of the mirror. Reflects X-rays only in the direction. That is, the incident X-ray 6 and the reflected X-ray 7 are located symmetrically with respect to the normal line N. Therefore, the multilayer mirror is used to change the traveling direction of light when the surface shape is flat and to change the spread of light when the surface shape is flat, similar to the mirror that is generally used for visible light. To be done. Furthermore, by combining a curved multilayer mirror, it can be applied to an X-ray microscope or a projection exposure imaging optical system.
【０００４】図１１に示すＸ線用多層膜ミラーは、Ｘ線
投影露光におけるマスクとして使用することもできる。
従来、Ｘ線投影露光ではＸ線が透過し易い物質からなる
厚さ２μｍ程度の自立膜（メンブレン）の上に、Ｘ線を
透過しにくい物質からなる薄膜部材で所望のパターンを
形成した透過型のマスクが用いられてきた。しかし、こ
のマスクはメンブレンの強度が非常に弱いため、大面積
のマスクの作製が困難であること、および、Ｘ線を照射
したときに発生する熱による変形が生じ易い等の問題点
があった。The multilayer mirror for X-ray shown in FIG. 11 can also be used as a mask in X-ray projection exposure.
Conventionally, a transmission type in which a desired pattern is formed by a thin film member made of a substance that does not easily transmit X-rays on a free-standing film (membrane) having a thickness of about 2 μm that is made of a substance that easily transmits X-rays in X-ray projection exposure. Masks have been used. However, since the strength of the membrane of this mask is extremely weak, it is difficult to manufacture a mask having a large area, and there is a problem in that it is easily deformed by heat generated when X-rays are irradiated. .
【０００５】そこで、このような問題点を解決するため
に図１２(ａ)、(ｂ)、(ｃ)に示すような反射型のマスク
が提案されている。図１２(ａ)は多層膜１の一部をエッ
チングなどにより除去してパターンを形成したもの、同
図(ｂ)は多層膜１の表面の一部にＸ線を吸収する薄膜８
を積層してパターンを形成したもの、同図(ｃ)は多層膜
１の一部の周期構造をイオン注入などにより破壊し、周
期構造が破壊された多層膜２６によりパターンを形成し
たものである。図１２(ａ)、(ｂ)、(ｃ)に示すマスク
は、いずれも薄いメンブレンの代わりに厚い基板２を用
いることができるため、上記の問題点は生じない。Therefore, in order to solve such a problem, a reflection type mask as shown in FIGS. 12 (a), 12 (b) and 12 (c) has been proposed. 12A shows a pattern formed by removing a part of the multilayer film 1 by etching or the like, and FIG. 12B shows a part of the surface of the multilayer film 1 that absorbs X-rays.
(C) shows that a part of the periodic structure of the multilayer film 1 is destroyed by ion implantation or the like, and the pattern is formed by the multilayer film 26 in which the periodic structure is destroyed. . The masks shown in FIGS. 12A, 12B, and 12C do not have the above problems because the thick substrate 2 can be used instead of the thin membrane.
【０００６】[0006]
【発明が解決しようとする課題】透過型マスクおよび反
射型マスクを用いたＸ線投影露光の光学系の概略図を図
４に示す。図４において、９は透過型マスク、１０は結
像光学系、１１は結像面、１２はＸ線、１３は図１２で
例示したような反射型マスクである。透過型マスク９で
はＸ線１２の透過光を利用するため、図４(ａ)に示すよ
うにパターンの配列する平面（すなわちマスク９の表
面）がＸ線１２の光軸に対して垂直になるように配置す
ることができる。一方、従来の反射型マスク１３では、
マスク１３の表面（パターンの配列する平面）をＸ線１
２の光軸に対して垂直にすると入射光と反射光が重なっ
てしまう（図１１参照）ため、図４(ｂ)に示すようにマ
スク１３の表面の法線方向が光軸に対し傾いた状態でマ
スク１３を配置しなければならない。FIG. 4 shows a schematic diagram of an optical system for X-ray projection exposure using a transmission type mask and a reflection type mask. In FIG. 4, 9 is a transmissive mask, 10 is an image forming optical system, 11 is an image forming surface, 12 is an X-ray, and 13 is a reflective mask as illustrated in FIG. Since the transmissive mask 9 uses the transmitted light of the X-rays 12, the plane on which the patterns are arranged (that is, the surface of the mask 9) is perpendicular to the optical axis of the X-rays 12 as shown in FIG. Can be arranged as. On the other hand, in the conventional reflective mask 13,
X-ray 1 on the surface of the mask 13 (the plane on which the patterns are arranged)
Since the incident light and the reflected light are overlapped with each other if they are perpendicular to the optical axis of 2 (see FIG. 11), the normal direction of the surface of the mask 13 is inclined with respect to the optical axis as shown in FIG. 4B. The mask 13 must be arranged in this state.
【０００７】したがって、透過型マスク９の場合、マス
ク９の表面の各点と結像光学系１０との距離は一定であ
るが、反射型マスク１３の場合はＸ線１２の光軸に対し
て傾いている分だけ一定ではなくなる。従って、反射型
マスク１３を用いた場合、結像光学系１０がマスク１３
あるいは照明されているマスク１３の部分の全面に対し
焦点が合うような大きな焦点深度を有していなければな
らない。反射型マスク１３を用いた場合に結像光学系１
０に要求される焦点深度Ｄは、マスク１３を一辺ｌの正
方形とするとTherefore, in the case of the transmissive mask 9, the distance between each point on the surface of the mask 9 and the imaging optical system 10 is constant, but in the case of the reflective mask 13, the distance with respect to the optical axis of the X-ray 12 is set. It is not constant as much as it leans. Therefore, when the reflective mask 13 is used, the imaging optical system 10 is
Alternatively, it must have a large depth of focus such that the entire surface of the illuminated mask 13 is in focus. Imaging optical system 1 when the reflective mask 13 is used
The depth of focus D required for 0 is a square with one side of the mask 13
【数１】 Ｄ＝ｌ sin(90−θ) ……(１) θ：Ｘ線１２とマスク１３の表面とがなす斜入射角 となる。(１)式から理解できるように、マスク１３が大
きくなるほど焦点深度Ｄを大きくする必要がある。ま
た、θが90°に近いほど焦点深度Ｄは小さくなるが、実
際は照明系の配置による制限から、θを約87°より大き
くすることは経験上困難である。例えば、倍率1／5、解
像度0.1μｍの光学系で、一辺10ｍｍの正方形の反射型
マスク１３に形成されたパターンをθ＝87°の配置でＸ
線縮小露光するとき、結像光学系１０の焦点深度Ｄは、
(１)式よりマスク側で500μｍ以上、結像光学系１０の
倍率が1／5であるからウェハー側で20μｍ（＝500×（1
／5）2）以上必要になる。一方、このような結像光学系
１０において実現可能な焦点深度Ｄは像側で１μｍ以下
である。従って、上記のような高分解能と大きな焦点深
度を兼ね備えた光学系を作製することは非常に困難であ
る。## EQU1 ## D = l sin (90-.theta.) (1) .theta .: The oblique incident angle between the X-ray 12 and the surface of the mask 13. As can be understood from the equation (1), it is necessary to increase the depth of focus D as the mask 13 becomes larger. Although the depth of focus D becomes smaller as θ approaches 90 °, it is actually difficult to make θ larger than about 87 ° due to the limitation of the arrangement of the illumination system. For example, with an optical system having a magnification of 1/5 and a resolution of 0.1 μm, a pattern formed on a square reflective mask 13 having a side of 10 mm is X = 87 ° in X pattern.
When the line reduction exposure is performed, the focal depth D of the imaging optical system 10 is
From equation (1), the mask side is 500 μm or more, and the magnification of the imaging optical system 10 is 1/5, so the wafer side is 20 μm (= 500 × (1
/ 5) 2 ) or more is required. On the other hand, the depth of focus D that can be realized in such an imaging optical system 10 is 1 μm or less on the image side. Therefore, it is very difficult to manufacture an optical system having both the high resolution and the large depth of focus as described above.
【０００８】Ｘ線縮小投影露光の露光の方法としては、
上記のような大面積を一括露光する方法の他に、マスク
の一部を輪帯状に照明してウエハを露光しながらマスク
とウエハをスキャンすることにより、大面積の露光を行
う方法がある（たとえばSolid State Technology 日本
版，p.19-25，1991 September参照）。この方法は、マ
スクの一部を輪帯状に照明する結像光学系の作製が容易
であるという利点を持つ。マスクを輪帯状に照明する場
合は、輪帯の幅が上記の(１)式のｌに相当する。しか
し、例えば、倍率1／5、解像度0.1μｍの光学系を用い
て、輪帯の幅が0.5ｍｍ、θ＝87°の配置でＸ線縮小露
光するとき、光学系の焦点深度はウェハー側で１μｍ
（500×（1／5））以上必要になる。従って、焦点深度
１μm程度の光学系で露光装置を作製する場合には特定
の一点でのみ焦点が合わなければならず、ほとんど実現
困難な高精度のアライメント精度が要求される。輪帯の
幅をさらに小さくすれば焦点深度Ｄを小さくして光学系
への負担を軽くすることができるが、輪帯の幅が小さく
なることにより照明光学系の作製が困難になり、また、
スループットの点から輪帯全体のＸ線強度を低下させる
ことは困難であるため、輪帯の幅が小さくなればその分
マスクの単位面積当たりの照射Ｘ線強度が増大し、これ
によりマスクの耐久性の問題も生じる。As an exposure method of X-ray reduction projection exposure,
In addition to the method of collectively exposing a large area as described above, there is a method of exposing a large area by illuminating a part of the mask in a ring shape and scanning the mask and the wafer while exposing the wafer ( For example, see Solid State Technology Japan Edition, p.19-25, September 1991). This method has an advantage that an imaging optical system that illuminates a part of the mask in an annular shape can be easily manufactured. When the mask is illuminated like a ring, the width of the ring corresponds to 1 in the above formula (1). However, for example, when X-ray reduction exposure is performed with an optical system with a magnification of 1/5 and a resolution of 0.1 μm with an annular width of 0.5 mm and θ = 87 °, the depth of focus of the optical system is on the wafer side. 1 μm
(500 x (1/5)) or more is required. Therefore, when an exposure apparatus is manufactured with an optical system having a focal depth of about 1 μm, it is necessary to focus only on a specific point, and highly accurate alignment accuracy that is almost difficult to realize is required. If the width of the zone is further reduced, the depth of focus D can be reduced to reduce the burden on the optical system, but the reduction of the width of the zone makes it difficult to manufacture the illumination optical system.
Since it is difficult to reduce the X-ray intensity of the entire zone from the viewpoint of throughput, the smaller the width of the zone is, the more the irradiation X-ray intensity per unit area of the mask is increased. Sexual problems also arise.
【０００９】以上のように、従来の反射型マスクによる
Ｘ線投影露光では、透過型マスクに比べて高いアライメ
ント精度を必要とし、また結像光学系にも大きな焦点深
度を要求するという問題点があった。As described above, the conventional X-ray projection exposure using a reflective mask requires higher alignment accuracy than a transmissive mask, and also requires a large depth of focus in the imaging optical system. there were.
【００１０】本発明の目的は、反射型マスクと結像光学
系との相対的配置関係の自由度を増加させることの可能
なＸ線用多層膜ミラー、反射型マスクおよびＸ線用多層
膜ミラーの製造方法を提供することにある。An object of the present invention is to provide a multilayer film mirror for X-rays, a reflective mask and a multilayer film mirror for X-rays, which can increase the degree of freedom in the relative positional relationship between the reflective mask and the imaging optical system. It is to provide a manufacturing method of.
【００１１】[0011]
【課題を解決するための手段】本発明は、基板上にＸ線
領域の波長を有する光の屈折率と真空中の屈折率との差
が小さい物質からなる第一層と前記差が大きい物質から
なる第二層とを交互に積層してなる多層膜を備えたＸ線
用多層膜ミラーに適用され、そして、上述の目的は、前
記多層膜を構成する各層の界面に対して前記多層膜の表
面を所定角度だけ傾斜して形成することにより達成され
る。また、前記多層膜の表面で反射されるＸ線がこの多
層膜表面の法線方向に沿って反射されるように前記多層
膜の周期およびこれを構成する各層の界面と前記多層膜
の表面とがなす前記所定角度を設定した。さらに、Ｘ線
用多層膜ミラーの前記多層膜の一部にＸ線を反射しない
Ｘ線非反射部を形成し、前記Ｘ線非反射部を所定のパタ
ーンに形成形成して反射型マスクとした。According to the present invention, a first layer made of a substance having a small difference between a refractive index of light having a wavelength in the X-ray region and a refractive index in vacuum on a substrate and a substance having the large difference. The present invention is applied to a multilayer mirror for X-rays, which comprises a multilayer film formed by alternately laminating a second layer consisting of the above-mentioned multilayer film. It is achieved by inclining the surface of the device by a predetermined angle. In addition, the cycle of the multilayer film and the interface between the layers constituting the multilayer film and the surface of the multilayer film so that X-rays reflected on the surface of the multilayer film are reflected along the normal direction of the surface of the multilayer film. Was set to the predetermined angle. Further, an X-ray non-reflecting portion that does not reflect X-rays is formed on a part of the multi-layer film of the X-ray multilayer mirror, and the X-ray non-reflecting portion is formed in a predetermined pattern to form a reflective mask. .
【００１２】また、上記多層膜ミラーは従来の多層膜ミ
ラーの製造方法では製造できないため、以下に述べるよ
うな方法が必要になる。上記方法の一つとして、多層膜
ミラーの薄膜形成時に基板上にスリットを配置し、それ
を基板表面に平行に移動させる方法を考案した。Further, since the above-mentioned multilayer film mirror cannot be manufactured by the conventional manufacturing method for a multilayer film mirror, the following method is required. As one of the above methods, a method has been devised in which a slit is arranged on a substrate when a thin film of a multilayer mirror is formed and the slit is moved parallel to the substrate surface.
【００１３】まず、図６(ｂ)に示すような断面形状の基
板２を用意する。この基板２の表面の一部は、他の表面
（平坦面）１７に対して所定の角度φで傾斜する傾斜面
１６に形成されている。この角度φは、製造すべきＸ線
用多層膜ミラー１４の表面３と多層膜１の界面４とがな
す角度φ（図１参照）に等しくされている。次に、この
基板２の上に図６(ａ)に示すようなスリット板１５を配
置する。スリット板１５には平面視長方形のスリット１
５ａが形成されており、このスリット１５ａの幅ａは、
多層膜１全体の厚さをｔとすれば、次式First, a substrate 2 having a sectional shape as shown in FIG. 6 (b) is prepared. A part of the surface of the substrate 2 is formed as an inclined surface 16 that is inclined at a predetermined angle φ with respect to the other surface (flat surface) 17. This angle φ is made equal to the angle φ (see FIG. 1) formed by the surface 3 of the X-ray multilayer mirror 14 to be manufactured and the interface 4 of the multilayer film 1. Next, the slit plate 15 as shown in FIG. 6A is arranged on the substrate 2. The slit plate 15 has a rectangular slit 1 in a plan view.
5a is formed, and the width a of this slit 15a is
If the total thickness of the multilayer film 1 is t, then
【数２】 ａ＝ｔ／tan φ ……(２) により定められる。逆に、ａの大きさを定めることによ
り多層膜１の膜厚ｔを調整できる。基板２の傾斜面１６
の幅ｂはａより大きければよい。## EQU00002 ## a = t / tan .phi .... (2) On the contrary, the film thickness t of the multilayer film 1 can be adjusted by determining the size of a. Inclined surface 16 of substrate 2
The width b of is larger than a.
【００１４】次に、多層膜１をスパッタ法等により以下
の手順で積層する。まず、図７(ａ)に示すように、スリ
ット１５ａが基板２の傾斜面１６の上に位置するように
スリット板１５を配置する。そして、スリット板１５を
水平移動させつつそのスリット１５ａからスパッタ粒子
１８を基板２の表面１６に積層して多層膜１の第一層１
９を成膜し、図７(ｂ)に示すように第一層１９が所望の
膜厚ｄ1になったとき第一層１９の成膜作業を停止し
て、同時にスリット板１５の水平移動を停止させる。こ
の間、スリット板１５は等速で水平移動され、その速度
は、距離Next, the multilayer film 1 is laminated by the following procedure by a sputtering method or the like. First, as shown in FIG. 7A, the slit plate 15 is arranged so that the slit 15 a is located on the inclined surface 16 of the substrate 2. Then, while the slit plate 15 is horizontally moved, the sputtered particles 18 are laminated on the surface 16 of the substrate 2 from the slits 15a to form the first layer 1 of the multilayer film 1.
9 is formed, and when the first layer 19 has a desired film thickness d 1 as shown in FIG. 7B, the film forming operation of the first layer 19 is stopped, and the slit plate 15 is moved horizontally at the same time. To stop. During this time, the slit plate 15 is horizontally moved at a constant speed, and the speed is
【数３】 Ｐ＝ｄ1／sin φ ……(３) を、第一層１９を一層成膜する時間で割った速度とされ
る。同様に、スリット板１５を水平移動させつつ第二層
２０を成膜し、図７(ｃ)に示すように第二層２０が所望
の膜厚ｄ2になったとき第二層２０の成膜作業を停止し
て、同時にスリット板１５の水平移動を停止する。以上
で、多層膜１の一周期が積層できる。以下、上述と同様
の操作を繰り返し、基板２の全面に多層膜１を積層する
ことによって、図１に示すようなＸ線用多層膜ミラー１
４が得られる。また、成膜後にミラー１４の表面３を研
磨すると、表面粗さが小さくなりミラー１４の反射率を
向上することができる。Equation 3] P = d 1 / sin φ ...... (3) is the velocity divided by the time to further forming the first layer 19. Similarly, the second layer 20 is formed while horizontally moving the slit plate 15, and when the second layer 20 has a desired film thickness d 2 as shown in FIG. 7C, the formation of the second layer 20 is completed. The film work is stopped, and at the same time, the horizontal movement of the slit plate 15 is stopped. As described above, one cycle of the multilayer film 1 can be stacked. Hereinafter, the same operation as described above is repeated to stack the multilayer film 1 on the entire surface of the substrate 2 to thereby obtain the multilayer mirror 1 for X-ray as shown in FIG.
4 is obtained. Further, when the surface 3 of the mirror 14 is polished after the film formation, the surface roughness becomes small and the reflectance of the mirror 14 can be improved.
【００１５】上述の方法で作製した多層膜１は、従来の
多層膜１と同様、ミラー面内の膜厚が一定である。従っ
て、膜厚の大きさに関わらず面内の反射率は一定であ
る。また、任意の膜厚が選択できるため、内部応力が大
きいことにより膜厚を大きくすると剥離しやすいような
多層膜も、その膜厚を小さくすることによって作製する
ことが可能である。図１に示すＸ線用多層膜ミラー１４
を反射型マスク１３として使う場合は、図１２に示した
従来のマスク１３と同様の手法によりパターン形成が可
能である。Like the conventional multilayer film 1, the multilayer film 1 produced by the above method has a constant film thickness within the mirror surface. Therefore, the in-plane reflectance is constant regardless of the film thickness. Further, since an arbitrary film thickness can be selected, it is possible to manufacture a multi-layer film which is easily peeled off when the film thickness is increased due to a large internal stress, by reducing the film thickness. The X-ray multilayer mirror 14 shown in FIG.
When is used as the reflective mask 13, the pattern can be formed by the same method as the conventional mask 13 shown in FIG.
【００１６】また、別の製造方法として、従来と同様に
製造された多層膜ミラーから多層膜の一部を成膜後に除
去する方法がある。本方法には以下のような方法が含ま
れる。一つは、成膜された多層膜ミラーを多層膜表面に
対し傾けて配置して多層膜の表面側を研磨する方法であ
る。本方法は、図８(ａ)に示すように、表面１６が基板
２の底面２ａに対して角度φだけ傾いた傾斜平面に形成
された断面形状の基板２上に、まずスパッタ法等で図８
(ｂ)に示すように多層膜１を積層し、その表面を図８
(ｃ)に示すように斜めに研磨して多層膜１の一部２１を
斜めに除去するものである。As another manufacturing method, there is a method of removing a part of the multilayer film from the multilayer mirror manufactured in the same manner as the conventional method after the film formation. The method includes the following methods. One is a method of arranging the formed multilayer mirror with an inclination with respect to the surface of the multilayer film and polishing the surface side of the multilayer film. In this method, as shown in FIG. 8A, a surface 16 is first formed by a sputtering method or the like on a substrate 2 having a cross-sectional shape formed in an inclined plane inclined by an angle φ with respect to the bottom surface 2a of the substrate 2. 8
The multilayer film 1 is laminated as shown in FIG.
As shown in (c), the part 21 of the multilayer film 1 is obliquely removed by obliquely polishing.
【００１７】基板２の表面（傾斜面）１６のなす角度φ
は、ミラー１４の表面３と多層膜１の界面４とがなす角
度に等しいが、これは、研磨により多層膜１の一部２１
を除去する作業において研磨面を基板２の底面２ａに平
行にして行えるようにするためである。従って、基板２
の表面１６を傾斜させることなく、平行平面基板に成膜
してそれを角度φだけ傾けて研磨してもよい。また、本
方法は角度φが大きくなると多層膜を多数層積層しなけ
ればならないものの、多層膜ミラーを非常に簡単に製造
できるという特徴を有する。従って、本方法は角度φの
小さいミラーや、面積の小さいミラーの製造に適してい
る。The angle φ formed by the surface (inclined surface) 16 of the substrate 2
Is equal to the angle formed by the surface 3 of the mirror 14 and the interface 4 of the multilayer film 1.
This is to enable the polishing surface to be parallel to the bottom surface 2a of the substrate 2 in the work of removing. Therefore, the substrate 2
It is also possible to form a film on a plane-parallel substrate and incline it by an angle φ without polishing the surface 16 of the above. Further, this method has a feature that a multi-layer film mirror can be manufactured very easily, though a large number of multi-layer films must be stacked when the angle φ becomes large. Therefore, this method is suitable for manufacturing a mirror having a small angle φ and a mirror having a small area.
【００１８】別の製造方法は、図９(ａ)に示すような断
面形状を有する基板２上に多層膜１を形成する方法であ
る。つまり、基板２の表面に、基板２の底面２ａに平行
な面が残らないようにＶ字型の溝Ｇを一定周期で一次元
に配列し、各溝Ｇを構成する二つの表面２２、２３のう
ち一方の表面２２が互いに平行に形成された基板２を用
意し、この基板２上に、図９(ｂ)に示すように多層膜１
をスパッタ法等により積層する。積層した後、多層膜１
の表面に研磨等を施して表面の一部を除去すると、図９
(ｃ)に示すような多層膜ミラー１４が得られる。本方法
は、同一の多層膜１の膜厚ｔを得る場合、上記の方法
（請求項６に記載の方法）に比べ積層数が少なくてよい
という特徴を有する。従って、角度φの大きなミラーお
よび面積の大きなミラーを容易に製造することができ
る。また、スパッタ等で積層粒子１８の入射方向を表面
２３に平行にすると、粒子が基板面２３に付着せず高反
射率のミラーが得やすい。また、層数が少ない場合は、
多層膜ミラー１４の反射率が基板２の各頂点２４の位置
で小さくなるが、層数を十分多くすれば反射率が飽和し
てミラー１４の反射率は面内で一定になる。さらにこの
ときはミラー１４の反射率が最大となるため、層数は反
射率が飽和する程度にするのが好ましい。Another manufacturing method is a method of forming a multilayer film 1 on a substrate 2 having a cross-sectional shape as shown in FIG. 9 (a). That is, the V-shaped grooves G are one-dimensionally arrayed at a constant period so that no surface parallel to the bottom surface 2a of the substrate 2 remains on the surface of the substrate 2, and the two surfaces 22, 23 forming each groove G are arranged. A substrate 2 having two surfaces 22 formed parallel to each other is prepared, and the multilayer film 1 is formed on the substrate 2 as shown in FIG. 9B.
Are laminated by a sputtering method or the like. After stacking, multilayer film 1
When a part of the surface is removed by polishing the surface of the
The multilayer mirror 14 as shown in (c) is obtained. This method is characterized in that the number of laminated layers may be smaller than that in the above method (the method according to claim 6) when the same film thickness t of the multilayer film 1 is obtained. Therefore, a mirror having a large angle φ and a mirror having a large area can be easily manufactured. Further, when the incident direction of the laminated particles 18 is made parallel to the surface 23 by sputtering or the like, the particles do not adhere to the substrate surface 23 and it is easy to obtain a mirror having a high reflectance. If the number of layers is small,
The reflectance of the multilayer film mirror 14 becomes small at the positions of the respective apexes 24 of the substrate 2, but if the number of layers is sufficiently increased, the reflectance is saturated and the reflectance of the mirror 14 becomes constant within the plane. Further, at this time, since the reflectance of the mirror 14 becomes maximum, it is preferable to set the number of layers to such an extent that the reflectance is saturated.
【００１９】また別の製造方法は、図１１に示すような
従来の多層膜ミラーを図１０(ａ)に示すように厚さ方向
に沿った切断面２５で切断して微小幅を有する複数のミ
ラー１４ａとし、再びそれらを図１０(ｂ)に示すように
多層膜１の積層方向にずらして接合し、表面を研磨して
図１０(ｃ)に示すような多層膜ミラー１４を製造する方
法である。ずらす量ｑは次式In another manufacturing method, a conventional multilayer mirror as shown in FIG. 11 is cut at a cutting surface 25 along the thickness direction as shown in FIG. A method for manufacturing the multilayer film mirror 14 as shown in FIG. 10 (c), which is used as the mirror 14a, is again shifted in the stacking direction of the multilayer film 1 as shown in FIG. 10 (b) and bonded, and the surface is polished. Is. The shift amount q is
【数４】ｑ＝ｒtan φ ……(４) ｒ：切断したミラーの幅、φ：多層膜１の界面４がなす
角 で与えられ、多層膜１の膜厚ｔはｑより大きいことが好
ましい。これらの方法は、平面基板に限らず曲面基板に
も応用できる。[Mathematical formula-see original document] q = rtan φ (4) where r is the width of the cut mirror, φ is the angle formed by the interface 4 of the multilayer film 1, and the film thickness t of the multilayer film 1 is preferably larger than q. . These methods can be applied to curved substrates as well as flat substrates.
【００２０】[0020]
【作用】本発明では、図１に示すようにミラー表面、す
なわち多層膜表面３が多層膜１を構成する各層１９、２
０の反射面（界面）４に対して角度φだけ傾いて形成さ
れている。従って、入射Ｘ線および反射Ｘ線のミラー表
面に対する角度θI、θRは、多層膜１の反射面４に対す
るＸ線６、７の角度θと異なり、 θI＝θ−φ θR＝θ＋φ となる。これにより、本発明による多層膜ミラー１４
は、Ｘ線６をミラー表面３に対し非対称に反射すること
ができる。図２および図３に示すような本発明による多
層膜ミラー１４にパターンを形成した反射型マスク１３
を用いた、Ｘ線投影露光装置の概略図を図４(ｃ)に示
す。多層膜１の周期および多層膜１の傾きφを適宜設定
することにより、反射Ｘ線の角度θRを９０゜にするこ
とができる。これにより、マスク１３の表面が結像光学
系１０の光軸に対して垂直になるようにマスク１３を配
置することができる。In the present invention, as shown in FIG. 1, the mirror surface, that is, the multilayer film surface 3 constitutes each of the layers 19 and 2 constituting the multilayer film 1.
The reflection surface (interface) 4 of 0 is inclined by an angle φ. Therefore, the angles θ I and θ R of the incident X-rays and the reflected X-rays with respect to the mirror surface are different from the angles θ of the X-rays 6 and 7 with respect to the reflecting surface 4 of the multilayer film 1, and θ I = θ−φ θ R = θ + φ Becomes Thereby, the multilayer mirror 14 according to the present invention
Can reflect X-rays 6 asymmetrically with respect to the mirror surface 3. A reflective mask 13 having a pattern formed on a multilayer mirror 14 according to the present invention as shown in FIGS. 2 and 3.
FIG. 4 (c) shows a schematic view of an X-ray projection exposure apparatus using the. By appropriately setting the cycle of the multilayer film 1 and the inclination φ of the multilayer film 1, the angle θ R of the reflected X-ray can be set to 90 °. Thereby, the mask 13 can be arranged so that the surface of the mask 13 is perpendicular to the optical axis of the imaging optical system 10.
【００２１】なお、本発明の構成を説明する上記課題を
解決するための手段と作用の項では、本発明を分かり易
くするために実施例の図を用いたが、これにより本発明
が実施例に限定されるものではない。Incidentally, in the section of means and action for solving the above-mentioned problems for explaining the constitution of the present invention, the drawings of the embodiments are used for the purpose of making the present invention easy to understand. It is not limited to.
【００２２】[0022]
−第１実施例− 図２は本発明の第１実施例を示す概略断面図である。本
図は基板２上に多層膜１を所望のパターン状に形成した
反射型マスクを示している。多層膜の界面４は反射マス
クの表面（つまり多層膜表面３）あるいは基板の表面５
に対し３゜傾いている。以下にこの反射型マスクの製造
方法を説明する。First Embodiment FIG. 2 is a schematic sectional view showing a first embodiment of the present invention. This figure shows a reflective mask in which a multilayer film 1 is formed in a desired pattern on a substrate 2. The interface 4 of the multilayer film is the surface of the reflection mask (that is, the multilayer film surface 3) or the surface 5 of the substrate.
It is inclined by 3 °. The method for manufacturing the reflective mask will be described below.
【００２３】まず、図６(ｂ)に示すような形状の基板２
を用意する。この基板２は表面のサイズが20×20ｃｍで
あるが、その表面の一部（傾斜面）１６が他の表面１７
に対し３゜傾いている。次に、この基板２の上に、図６
(ａ)に示すような長方形のスリット１５ａが形成された
スリット板１５を配置した。このスリット１５ａの幅ａ
は傾斜面１６の幅ｂ以下であればよいが、本実施例では
ａ、ｂとも６．２μｍとした。次に、スリット板１５を
水平移動させつつ、モリブデン層１９と硅素層２０とか
らなる多層膜（Ｍｏ／Ｓｉ）１をスパッタ法により積層
した。モリブデンおよび珪素の膜厚ｄ1、ｄ2は、それぞ
れ２５、４２Åとした。以上で、図１に示すようなＸ線
用多層膜ミラー１４が得られる。次に、この多層膜１の
一部をエッチングにより除去した。まず、ミラー１４の
表面にレジストを塗布し、これに紫外線を用いた縮小投
影露光装置で最小線幅0.5μｍのパターンを焼き付け
た。さらにイオンミリング装置により多層膜をエッチン
グした後、レジストを除去した。以上の結果、図２に示
すような反射型マスク１３が得られた。なお、基板２の
傾いた表面部分１６はミラー１４および反射型マスク１
３として用いない。First, the substrate 2 having a shape as shown in FIG.
To prepare. This substrate 2 has a surface size of 20 × 20 cm, but a part (inclined surface) 16 of the surface is the other surface 17.
It is inclined by 3 °. Next, on the substrate 2, as shown in FIG.
A slit plate 15 having a rectangular slit 15a as shown in (a) was arranged. Width a of this slit 15a
Is a width b of the inclined surface 16 or less, but in the present embodiment, both a and b are set to 6.2 μm. Next, while the slit plate 15 was moved horizontally, the multilayer film (Mo / Si) 1 including the molybdenum layer 19 and the silicon layer 20 was laminated by the sputtering method. The film thicknesses d 1 and d 2 of molybdenum and silicon were set to 25 and 42Å, respectively. Thus, the multilayer mirror 14 for X-ray as shown in FIG. 1 is obtained. Next, a part of this multilayer film 1 was removed by etching. First, a resist was applied on the surface of the mirror 14, and a pattern having a minimum line width of 0.5 μm was printed on the resist by a reduction projection exposure apparatus using ultraviolet rays. After etching the multilayer film with an ion milling device, the resist was removed. As a result, the reflective mask 13 as shown in FIG. 2 was obtained. The inclined surface portion 16 of the substrate 2 is formed by the mirror 14 and the reflective mask 1.
Not used as 3.
【００２４】このマスクに、波長１３０Å、ビームサイ
ズ0.5×0.5ｍｍの軟Ｘ線６を照射し、解像度0.1μｍ、
倍率1／5、焦点深度１μｍの光学系１０で、レジストを
塗布したシリコンウエハ上に縮小露光した。このとき、
マスク１３の反射光７がマスク表面（ミラー表面３）に
対して垂直になるようにマスク１３を配置した（図２参
照）。その結果、0.1×0.1ｍｍの領域に0.1μｍのパタ
ーンが形成された。さらに、ウエハを光軸に対し垂直に
±0.5μｍ動かしても同様の結果が得られた。This mask is irradiated with a soft X-ray 6 having a wavelength of 130Å and a beam size of 0.5 × 0.5 mm to obtain a resolution of 0.1 μm.
An optical system 10 having a magnification of 1/5 and a focal depth of 1 μm was used to perform reduction exposure on a resist-coated silicon wafer. At this time,
The mask 13 was arranged so that the reflected light 7 of the mask 13 was perpendicular to the mask surface (mirror surface 3) (see FIG. 2). As a result, a 0.1 μm pattern was formed in the area of 0.1 × 0.1 mm. Further, similar results were obtained even when the wafer was moved ± 0.5 μm perpendicularly to the optical axis.
【００２５】本実施例では、マスクのパターンとして図
１２(ａ)に相当するものを作製したが、本発明によるマ
スクはこのようなパターン形状に限らず、例えば、図１
２(ｂ)、(ｃ)に相当するもの、あるいはこれらに類似し
た形態のマスクにも適応できる。また、本発明によるマ
スクは本実施例のような平面マスクに限らず、曲面形状
のマスクにも適応できる。In this embodiment, a mask pattern corresponding to that shown in FIG. 12A was produced, but the mask according to the present invention is not limited to such a pattern shape, and for example, as shown in FIG.
2 (b), (c), or a mask having a form similar to these can be applied. Further, the mask according to the present invention is not limited to the flat mask as in the present embodiment, but can be applied to a curved mask.
【００２６】−第２実施例− 図３は本発明の第２実施例を示す概略断面図である。本
図は、図示するような断面形状の基板２上に多層膜１が
積層されており、その表面３にＸ線吸収体８が所望のパ
ターンに形成されてなる反射型マスク１３を示してい
る。多層膜１の界面４は反射型マスク１３の表面３に対
し３゜傾いている。以下にこの反射型マスクの製造方法
を説明する。-Second Embodiment- FIG. 3 is a schematic sectional view showing a second embodiment of the present invention. This figure shows a reflective mask 13 in which a multilayer film 1 is laminated on a substrate 2 having a sectional shape as shown, and an X-ray absorber 8 is formed in a desired pattern on a surface 3 thereof. . The interface 4 of the multilayer film 1 is inclined 3 ° with respect to the surface 3 of the reflective mask 13. The method for manufacturing the reflective mask will be described below.
【００２７】まず、図９(ａ)に示すような断面形状を有
する基板２を用意する。本基板２のｑおよびｒの値はそ
れぞれ0.52μｍ、10μｍとした。また、溝Ｇを形成する
表面２２、２３のなす角度は90゜とした。次に、モリブ
デン層１９と珪素層２０とからなる多層膜１をスパッタ
法により周期６４Åで150ペア積層した。本実施例で使
用したスパッタ装置は、スパッタ粒子１８がターゲット
の垂直方向に最も多く飛び出すため、本実施例では、こ
の垂直方向と基板の表面２３とが平行になるように、つ
まり表面２２がターゲットの垂直方向に直交するように
配置して成膜した。次に、多層膜１の表面３が平面とな
るように研磨してＸ線用多層膜ミラー１４を製造した。
次にこのミラー１４の表面３に吸収体８のパターンを形
成した。まず、ミラー１４の表面３に吸収体８として金
を100ｎｍ蒸着した。そして、ミラー１４の表面３にレ
ジストを塗布し、これに紫外線を用いた縮小投影露光装
置で最小線幅0.5μｍのパターンを焼き付けた。さらに
イオンミリング装置により金蒸着膜をエッチングした
後、レジストを除去した。以上の結果、図３に示すよう
なマスクが得られた。First, a substrate 2 having a cross sectional shape as shown in FIG. 9 (a) is prepared. The values of q and r of this substrate 2 were 0.52 μm and 10 μm, respectively. The angle formed by the surfaces 22 and 23 forming the groove G was 90 °. Next, the multilayer film 1 including the molybdenum layer 19 and the silicon layer 20 was laminated by a sputtering method with 150 pairs with a period of 64 Å. In the sputtering apparatus used in this embodiment, the sputtered particles 18 are most ejected in the vertical direction of the target. Therefore, in this embodiment, the vertical direction is parallel to the surface 23 of the substrate, that is, the surface 22 is the target. Was formed so as to be orthogonal to the vertical direction. Next, the surface 3 of the multilayer film 1 was polished so as to be a flat surface, and the multilayer mirror 14 for X-ray was manufactured.
Next, a pattern of the absorber 8 was formed on the surface 3 of the mirror 14. First, 100 nm of gold was vapor deposited as the absorber 8 on the surface 3 of the mirror 14. Then, a resist was applied on the surface 3 of the mirror 14, and a pattern having a minimum line width of 0.5 μm was printed on the resist by a reduction projection exposure apparatus using ultraviolet rays. Further, after the gold vapor deposition film was etched by an ion milling device, the resist was removed. As a result, a mask as shown in FIG. 3 was obtained.
【００２８】このマスクについて、実施例１と同様の露
光実験を行ったところ、実施例１と同じ結果が得られ
た。また、本発明によるマスクは本実施例のような平面
マスクに限らず、曲面形状のマスクにも適応できる。な
お、本実施例では、隣合う溝Ｇの表面２２ａ、２２ｂ、
２２ｃ上に形成された多層膜１の界面４どうしが一致し
ない場合がある。この場合、各表面２２ａ、２２ｂ、２
２ｃ上の多層膜１の境界部（図９に点線Ｂで示す）付近
では多層膜１の反射条件が十分に満たされないこともあ
りうる。しかし、反射条件が満たされない領域は、多層
膜１の周期や多層膜界面４がなす角度φを適宜設定する
ことにより十分小さくすることが可能であり、マスク１
３として使用した場合にその像に影響を与えるおそれは
ない。When this mask was subjected to the same exposure experiment as in Example 1, the same result as in Example 1 was obtained. Further, the mask according to the present invention is not limited to the flat mask as in the present embodiment, but can be applied to a curved mask. In this embodiment, the surfaces 22a, 22b of the adjacent grooves G,
The interfaces 4 of the multilayer film 1 formed on the layer 22c may not coincide with each other. In this case, each surface 22a, 22b, 2
The reflection condition of the multilayer film 1 may not be sufficiently satisfied in the vicinity of the boundary portion (indicated by a dotted line B in FIG. 9) of the multilayer film 1 on 2c. However, the region where the reflection condition is not satisfied can be made sufficiently small by appropriately setting the period of the multilayer film 1 and the angle φ formed by the multilayer film interface 4.
When used as No. 3, there is no risk of affecting the image.
【００２９】−第３実施例− 図８(ｃ)は本発明の第３実施例を示す概略断面図であ
る。多層膜１は基板２上に積層されており、このとき多
層膜１の界面４はミラー１４の表面３に対し５°傾いて
いる。以下に、この多層膜ミラー１４の製造方法を説明
する。-Third Embodiment- FIG. 8C is a schematic sectional view showing a third embodiment of the present invention. The multilayer film 1 is laminated on the substrate 2, and at this time, the interface 4 of the multilayer film 1 is inclined 5 ° with respect to the surface 3 of the mirror 14. The method of manufacturing the multilayer mirror 14 will be described below.
【００３０】まず、図８(ａ)に示すように、表面１６が
底面２ａに対し５゜傾いて形成され、表面１６の面積が
５×５ｍｍの基板２上に、モリブデン層１９と珪素層２
０とからなる多層膜（Ｍｏ／Ｓｉ）１をスパッタ法によ
り周期96Åで45800ペア積層した。次に、多層膜１の表
面３が基板２の底面２ａと平行になるように、この多層
膜１の一部２１を研磨によって除去した。First, as shown in FIG. 8 (a), the surface 16 is formed with an inclination of 5 ° with respect to the bottom surface 2a, and the surface 16 has an area of 5 × 5 mm.
A multilayer film (Mo / Si) 1 consisting of 0 and 0 was laminated by a sputtering method at 45800 pairs with a period of 96Å. Next, part 21 of the multilayer film 1 was removed by polishing so that the surface 3 of the multilayer film 1 was parallel to the bottom surface 2a of the substrate 2.
【００３１】この多層膜ミラー１４に、コリメートされ
た波長130Å、ビームサイズ３×３ｍｍの軟Ｘ線６を入
射角θI＝40゜で照射したところ、図５に示すように反
射角θR＝50゜の方向にＸ線７が反射した。さらに、反
射Ｘ線７のビームサイズは3.6×３ｍｍに増加した。こ
れより、本多層膜ミラー１４はビームエキスパンダーと
して働くことが確認された。The multilayer mirror 14 was irradiated with collimated soft X-ray 6 having a wavelength of 130 Å and a beam size of 3 × 3 mm at an incident angle θ I = 40 °, and as shown in FIG. 5, a reflection angle θ R = X-ray 7 was reflected in the direction of 50 °. Further, the beam size of the reflected X-ray 7 is increased to 3.6 × 3 mm. From this, it was confirmed that the present multilayer mirror 14 works as a beam expander.
【００３２】−第４実施例− 図１０(ｃ)は本発明の第４実施例を示す概略断面図であ
る。本図は図１０(ｃ)に示すような断面形状の基板２上
に多層膜１が積層しているＸ線用多層膜ミラー１４を示
している。多層膜１の界面４はミラー１４の表面３に対
し５゜傾いている。以下にこの多層膜ミラーの製造方法
を説明する。-Fourth Embodiment- FIG. 10C is a schematic sectional view showing a fourth embodiment of the present invention. This figure shows an X-ray multilayer mirror 14 in which a multilayer film 1 is laminated on a substrate 2 having a sectional shape as shown in FIG. The interface 4 of the multilayer film 1 is inclined 5 ° with respect to the surface 3 of the mirror 14. The manufacturing method of this multilayer mirror will be described below.
【００３３】まず、図１１に示すような断面を有する多
層膜ミラーを用意する。多層膜１は周期96Å、1000ペア
のモリブデン層１９と珪素層２０とからなる多層膜であ
り、スパッタ法で作製した。この多層膜ミラーを、ダイ
ヤモンドカッターで図１０(ａ)に示すように切断面２５
に沿って切断して複数の切断ミラー１４ａを作製した。
このとき、各ミラー１４ａの幅ｒは100μｍとした。次
に、図１０(ｂ)に示すように、隣合うミラー１４ａの表
面が多層膜１の積層方向に8.75μｍずれるようにこれら
ミラー１４ａを接合した。さらに、表面３および裏面２
ａが平面となるようにミラー１４を研磨して図１０(ｃ)
に示すようなＸ線用多層膜ミラー１４を得た。このミラ
ー１４で実施例３と同様の実験を行ったところ、実施例
３と同様にビームエキスパンダーとして働くことがわか
った。First, a multilayer mirror having a cross section as shown in FIG. 11 is prepared. The multilayer film 1 is a multilayer film composed of 1000 pairs of molybdenum layer 19 and silicon layer 20 with a period of 96 liters, and was manufactured by a sputtering method. This multilayer film mirror is cut with a diamond cutter 25 as shown in FIG. 10 (a).
A plurality of cutting mirrors 14a were produced by cutting along the line.
At this time, the width r of each mirror 14a was 100 μm. Next, as shown in FIG. 10B, the mirrors 14a were bonded so that the surfaces of the adjacent mirrors 14a were displaced by 8.75 μm in the stacking direction of the multilayer film 1. Furthermore, the front surface 3 and the back surface 2
The mirror 14 is polished so that a becomes a plane, as shown in FIG.
The multilayer film mirror 14 for X-ray as shown in FIG. When an experiment similar to that of the third embodiment was conducted with this mirror 14, it was found that the mirror 14 functions as a beam expander as in the case of the third embodiment.
【００３４】なお、本発明のＸ線用多層膜ミラー等は、
その細部が上述の各実施例に限定されず、種々の変形例
が可能である。一例として、多層膜は本実施例で挙げた
モリブデンと珪素の組み合わせに限らない。また、角度
φも本実施例の値に限らない。The multilayer mirror for X-ray according to the present invention,
The details are not limited to the above-mentioned embodiments, and various modifications are possible. As an example, the multilayer film is not limited to the combination of molybdenum and silicon described in this embodiment. Also, the angle φ is not limited to the value in this embodiment.
【００３５】[0035]
【発明の効果】以上のように、本発明によれば、Ｘ線用
多層膜ミラーによりＸ線をミラー表面に対し非対称に反
射することができる。そのため、本発明によるＸ線用多
層膜ミラーを用いてＸ線投影露光用の反射型マスクを製
作すると、反射光のミラー表面に対する角度を90゜にす
ることができる。そのため、マスクに起因するアライメ
ント精度、照明光学系および結像光学系等への制限を小
さくすることができる。また、多層膜の周期および多層
膜を構成する各層の界面に対する多層膜表面の角度を適
宜選択することにより、特定の入射角をもって入射する
Ｘ線を任意の出射角で反射することが可能となり、照明
光学系、結像光学系および反射型マスクの配置の自由度
を増すことができる。また、本発明によるＸ線用多層膜
ミラーは、反射光のビームサイズを入射光に比べ小さく
したり大きくしたりすることが可能である。従って、ビ
ーム断面積が非常に小さいという欠点があるシンクロト
ロン放射光から放射される光でも、本ミラーにより、そ
の断面積を大きくすることができる。従って、例えばＸ
線投影露光においては、照明光学系に本ミラーを用いる
とマスクの広い領域が照明できる等の効果がある。As described above, according to the present invention, the X-ray multilayer mirror can reflect X-rays asymmetrically with respect to the mirror surface. Therefore, when a reflective mask for X-ray projection exposure is manufactured using the multilayer mirror for X-rays according to the present invention, the angle of reflected light with respect to the mirror surface can be 90 °. Therefore, it is possible to reduce the alignment accuracy due to the mask and the restrictions on the illumination optical system, the imaging optical system, and the like. Further, by appropriately selecting the cycle of the multilayer film and the angle of the surface of the multilayer film with respect to the interface of each layer forming the multilayer film, it becomes possible to reflect X-rays incident at a specific incident angle at an arbitrary exit angle, The degree of freedom in arranging the illumination optical system, the imaging optical system, and the reflective mask can be increased. Further, the multilayer mirror for X-ray according to the present invention can make the beam size of the reflected light smaller or larger than that of the incident light. Therefore, even with the light emitted from the synchrotron radiation, which has the drawback that the beam cross-sectional area is very small, the present mirror can increase the cross-sectional area. So, for example, X
In line projection exposure, the use of the present mirror in the illumination optical system has the effect of illuminating a wide area of the mask.
【図１】本発明による多層膜ミラーを示す概略断面図で
ある。FIG. 1 is a schematic sectional view showing a multilayer mirror according to the present invention.
【図２】本発明の第１実施例である反射型Ｘ線マスクを
示す概略断面図である。FIG. 2 is a schematic sectional view showing a reflective X-ray mask that is a first embodiment of the present invention.
【図３】本発明の第２実施例である反射型Ｘ線マスクを
示す概略断面図である。FIG. 3 is a schematic sectional view showing a reflective X-ray mask that is a second embodiment of the present invention.
【図４】(ａ)は透過型マスクを、(ｂ)は従来の反射型マ
スクを、(ｃ)は本発明による反射型マスクを用いた縮小
露光装置の概念図である。4A is a conceptual diagram of a reduction exposure apparatus using a transmissive mask, FIG. 4B is a conventional reflective mask, and FIG. 4C is a reduction exposure apparatus using the reflective mask according to the present invention.
【図５】本発明による多層膜ミラーにおける、入射およ
び反射ビームの断面積の変化を示す図である。FIG. 5 is a diagram showing changes in cross-sectional areas of incident and reflected beams in the multilayer mirror according to the present invention.
【図６】(ａ)は第１実施例の反射型Ｘ線マスクの製造に
用いられるスリットを示す概略斜視図、(ｂ)は基板を示
す概略斜視図である。6A is a schematic perspective view showing a slit used for manufacturing the reflective X-ray mask of the first embodiment, and FIG. 6B is a schematic perspective view showing a substrate.
【図７】第１実施例の反射型Ｘ線マスクの製造工程を示
す概略図である。FIG. 7 is a schematic view showing a manufacturing process of the reflective X-ray mask of the first embodiment.
【図８】第３実施例の多層膜ミラーの製造工程を示す概
略図である。FIG. 8 is a schematic view showing the manufacturing process of the multilayer mirror according to the third embodiment.
【図９】第２実施例の反射型Ｘ線マスクの製造工程を示
す概略断面図である。FIG. 9 is a schematic cross-sectional view showing the manufacturing process of the reflective X-ray mask of the second embodiment.
【図１０】第４実施例の多層膜ミラーの製造工程を示す
概略図である。FIG. 10 is a schematic view showing the manufacturing process of the multilayer mirror according to the fourth embodiment.
【図１１】従来の多層膜ミラーを示す概略断面図であ
る。FIG. 11 is a schematic sectional view showing a conventional multilayer mirror.
【図１２】従来の反射型Ｘ線マスクを示す概略断面図で
ある。FIG. 12 is a schematic sectional view showing a conventional reflective X-ray mask.
Ｇ 溝 １ 多層膜 ２ 基板 ３ ミラー表面 ４ 多層膜の界面（反射面） ５ 基板表面 ６ 入射Ｘ線 ７ 反射Ｘ線 ８ 吸収体 １０ 結像光学系 １２ Ｘ線 １３ 反射型マスク １４ 多層膜ミラー １５ スリット板 １５ａ スリット １６ 傾斜面 １７ 平坦面 １８ スパッタ粒子 １９ モリブデン層 ２０ 珪素層 ２１ 多層膜の一部 ２２、２３ 表面 ２５ 切断面 G groove 1 multilayer film 2 substrate 3 mirror surface 4 interface of multilayer film (reflection surface) 5 substrate surface 6 incident X-ray 7 reflected X-ray 8 absorber 10 imaging optical system 12 X-ray 13 reflective mask 14 multilayer mirror 15 Slit plate 15a Slit 16 Slanted surface 17 Flat surface 18 Sputtered particles 19 Molybdenum layer 20 Silicon layer 21 Part of multilayer film 22, 23 Surface 25 Cut surface
Claims (8)
する光の屈折率と真空中の屈折率との差が小さい物質か
らなる第一層と前記差が大きい物質からなる第二層とを
交互に積層してなる多層膜を備えたＸ線用多層膜ミラー
において、 前記多層膜を構成する各層の界面に対して前記多層膜の
表面を所定角度だけ傾斜して形成したことを特徴とする
Ｘ線用多層膜ミラー。1. A first layer formed on a substrate, the first layer being made of a substance having a small difference between the refractive index of light having a wavelength in the X-ray region and the refractive index in vacuum, and the second layer being made of a substance having the large difference. In a multilayer mirror for X-rays having a multilayer film formed by alternately stacking and, the surface of the multilayer film is formed to be inclined at a predetermined angle with respect to the interface of each layer forming the multilayer film. X-ray multilayer film mirror.
おいて、 前記多層膜の表面で反射されるＸ線がこの多層膜表面の
法線方向に沿って反射されるように前記多層膜の周期お
よびこれを構成する各層の界面と前記多層膜の表面とが
なす前記所定角度が設定されていることを特徴とするＸ
線用多層膜ミラー。2. The multilayer film mirror for X-rays according to claim 1, wherein the X-rays reflected on the surface of the multilayer film are reflected along a normal direction of the surface of the multilayer film. X and the predetermined angle formed by the interface of each layer constituting the same and the surface of the multilayer film are set.
Multilayer mirror for wire.
前記多層膜の一部にＸ線を反射しないＸ線非反射部が形
成され、前記Ｘ線非反射部が所定のパターンに形成され
てなる反射型Ｘ線マスク。3. An X-ray non-reflective portion that does not reflect X-rays is formed on a part of the multi-layer film of the X-ray multilayer mirror according to claim 1, and the X-ray non-reflective portion has a predetermined pattern. A reflection type X-ray mask formed.
空中の屈折率との差が小さい物質からなる第一層と前記
差が大きい物質からなる第二層とを基板上に交互に積層
して多層膜を形成する工程を備えたＸ線用多層膜ミラー
の製造方法において、 平坦面およびこの平坦面に対して所定角度をもって傾斜
する傾斜面を有する基板を用意し、前記傾斜面から前記
平坦面に向かって前記第一層および第二層を交互に形成
して前記多層膜を形成することを特徴とするＸ線用多層
膜ミラーの製造方法。4. A first layer made of a substance having a small difference between a refractive index of light having a wavelength in the X-ray region and a refractive index in vacuum and a second layer made of a substance having the large difference are alternately arranged on a substrate. In a method of manufacturing a multilayer mirror for X-rays, which comprises a step of forming a multilayer film by laminating on a flat surface, a substrate having a flat surface and an inclined surface inclined at a predetermined angle with respect to the flat surface is prepared. To the flat surface, the first layer and the second layer are alternately formed to form the multilayer film.
空中の屈折率との差が小さい物質からなる第一層と前記
差が大きい物質からなる第二層とを基板上に交互に積層
して多層膜を形成する工程を備えたＸ線用多層膜ミラー
の製造方法において、 前記基板上に設けられた平坦面に沿って前記第一層およ
び第二層を交互に形成して前記多層膜を形成した後、こ
の多層膜を構成する前記各層の界面と前記多層膜の表面
とが所定角度をもって傾斜するように前記多層膜の一部
を除去することを特徴とするＸ線用多層膜ミラーの製造
方法。5. A first layer made of a substance having a small difference between the refractive index of light having a wavelength in the X-ray region and a refractive index in vacuum and a second layer made of a substance having the large difference are alternately arranged on a substrate. In a method for manufacturing a multilayer mirror for X-rays, which comprises a step of forming a multilayer film by stacking on a substrate, a first layer and a second layer are alternately formed along a flat surface provided on the substrate. After forming the multi-layer film, a part of the multi-layer film is removed so that the interface between the layers forming the multi-layer film and the surface of the multi-layer film are inclined at a predetermined angle. Manufacturing method of multilayer mirror.
製造方法において、 前記多層膜を構成する前記各層の界面に対して所定角度
をなす研磨面に沿って前記多層膜を研磨することを特徴
とするＸ線用多層膜ミラーの製造方法。6. The method of manufacturing a multilayer film mirror for X-rays according to claim 5, wherein the multilayer film is polished along a polishing surface forming a predetermined angle with respect to an interface of each layer forming the multilayer film. A method of manufacturing a multilayer film mirror for X-rays, comprising:
製造方法において、 断面Ｖ字型の溝が一定周期で一次元に配列され、各溝を
構成する一対の面のうち一方の面が互いに平行に配置さ
れた基板を用意し、この基板の前記一方の面に沿って前
記第一層および第二層を交互に形成して前記多層膜を形
成することを特徴とするＸ線用多層膜ミラーの製造方
法。7. The method for manufacturing a multilayer film mirror for X-rays according to claim 5, wherein grooves having a V-shaped cross section are one-dimensionally arranged at a constant cycle, and one of a pair of surfaces constituting each groove is formed. An X-ray characterized in that a substrate whose surfaces are arranged in parallel to each other is prepared, and the first layer and the second layer are alternately formed along the one surface of the substrate to form the multilayer film. For manufacturing a multilayer film mirror for automobiles.
製造方法において、 前記多層膜を基板とともに前記多層膜の厚さ方向に切断
した後、切断した前記多層膜をその積層方向に互いにず
らして接合し、接合した多層膜の一部を除去することを
特徴とするＸ線用多層膜ミラーの製造方法。8. The method of manufacturing an X-ray multilayer mirror according to claim 5, wherein the multilayer film is cut together with a substrate in a thickness direction of the multilayer film, and the cut multilayer film is cut in a stacking direction thereof. A method for manufacturing a multilayer film mirror for X-rays, which comprises shifting and bonding the parts, and removing a part of the bonded multilayer film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33473592A JP3230105B2 (en) | 1992-12-15 | 1992-12-15 | X-ray multilayer mirror, reflective X-ray mask, method for manufacturing X-ray multilayer mirror, exposure apparatus, and method for manufacturing silicon wafer having pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33473592A JP3230105B2 (en) | 1992-12-15 | 1992-12-15 | X-ray multilayer mirror, reflective X-ray mask, method for manufacturing X-ray multilayer mirror, exposure apparatus, and method for manufacturing silicon wafer having pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06180399A true JPH06180399A (en) | 1994-06-28 |
| JP3230105B2 JP3230105B2 (en) | 2001-11-19 |
Family
ID=18280634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33473592A Expired - Lifetime JP3230105B2 (en) | 1992-12-15 | 1992-12-15 | X-ray multilayer mirror, reflective X-ray mask, method for manufacturing X-ray multilayer mirror, exposure apparatus, and method for manufacturing silicon wafer having pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3230105B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001041155A1 (en) * | 1999-11-29 | 2001-06-07 | Tohoku Techno Arch Co., Ltd. | Optical element such as multilayer film reflection mirror, production method therefor and device using it |
| JP2002162499A (en) * | 2000-11-27 | 2002-06-07 | Technos Kenkyusho:Kk | X-ray reflecting element, and method and device for manufacturing the same, and x-ray analyzer |
| JP2008197593A (en) * | 2007-02-16 | 2008-08-28 | Konica Minolta Medical & Graphic Inc | Transmission type diffraction grating for x-ray, x-ray talbot interferometer and x-ray imaging apparatus |
-
1992
- 1992-12-15 JP JP33473592A patent/JP3230105B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001041155A1 (en) * | 1999-11-29 | 2001-06-07 | Tohoku Techno Arch Co., Ltd. | Optical element such as multilayer film reflection mirror, production method therefor and device using it |
| KR100446126B1 (en) * | 1999-11-29 | 2004-08-30 | 토호쿠 테크노 아르크 코포레이션 리미티드 | Optical Element Such As Multilayer Film Reflection Mirror, Production Method Therefor And Device Using It |
| US7474733B1 (en) | 1999-11-29 | 2009-01-06 | Nikon Corporation | Optical element such as multilayer film reflection mirror, production method therefor and device using it |
| JP2002162499A (en) * | 2000-11-27 | 2002-06-07 | Technos Kenkyusho:Kk | X-ray reflecting element, and method and device for manufacturing the same, and x-ray analyzer |
| JP2008197593A (en) * | 2007-02-16 | 2008-08-28 | Konica Minolta Medical & Graphic Inc | Transmission type diffraction grating for x-ray, x-ray talbot interferometer and x-ray imaging apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3230105B2 (en) | 2001-11-19 |
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