JPH0617241A - Ion plating device - Google Patents

Abstract

PURPOSE:To provide the ion plating device having the excellent efficiency of utilizing the electrons from a plasma electron gun. CONSTITUTION:The electron beams generated from the plasma electron gun 9 are introduced from an electron beam exit port E into a chamber 1. While the electron beams introduced into a guide pipe 26 are reflected by the inside surface of the guide pipe 26, the electron beams progress until most of the electron beams are introduced into a funnel shape member 25 from lower side part of the funnel shape member 25. On the other hand, the material 3 in a crucible 2 is evaporated by the irradiation with the electrons from a filament 4 and the evaporated particles thereof are introduced from the lower small- diameter part of the funnel shape member 25 into the member. Consequently, the electron beams and the evaporated particles collide efficiently against each other within the funnel member and the ionization of the particles is accelerated.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion plating apparatus in which vaporized material particles are irradiated with electrons to be ionized and the ionized particles are attached to a substrate.

[0002]

2. Description of the Related Art FIG. 1 shows a conventional ion plating apparatus, in which 1 is a vacuum chamber. In the lower part of the vacuum chamber 1, a crucible 2 is arranged, and a material to be evaporated 3 is put therein. 4 is a filament, 5 is a high voltage power supply, and the electron beam generated from this filament 4 is 270 ° or 18 ° by a magnet (not shown).
The material to be evaporated 3 in the crucible 2 is irradiated with the light deflected by 0 °. On the upper part of the chamber 1, a substrate holder 6b to which a substrate 6a to which an ionized evaporation material is attached is attached is arranged. A reaction gas supply pipe 8 having a needle valve 7 is provided on the side of the chamber 1. Further, the chamber 1 is provided with a plasma electron gun 9. The plasma electron gun 9 includes a hot cathode 10, such as lanthanum hexaboride, an intermediate electrode 11, a discharge electrode 12, an annular DC coil 13, and a needle valve 14.
Argon gas supply pipe 15, hot cathode power source 16, discharge stabilizing resistor 17, discharge power source 18, intermediate electrode load resistor 1
It is composed of 9. A direct-current or high-frequency power source 20 is provided between the substrate holder 6b and the evaporation source (crucible 2) at the ground potential to efficiently guide the ionized evaporated particles toward the substrate 6a. Further, 21 is an exhaust pipe connected to an exhaust pump for exhausting the inside of the chamber 1.

In the above structure, first, the inside of the chamber 1 and the inside of the plasma electron gun 9 are evacuated to 10 ^-5 Torr or less. After that, the needle valve 14 provided in the argon gas supply pipe 15 of the plasma electron gun 9 is gradually opened to introduce the argon gas into the electron gun 9. Then, the hot cathode power supply 16 is turned on, the hot cathode current is gradually increased to the hot cathode rated temperature, and electrons are emitted from the hot cathode 16. Next, when the discharge power supply 18 is turned on and a discharge voltage is applied between the intermediate electrode 11 and the discharge electrode 12, a discharge is generated between both electrodes and a discharge current flows. Electrons generated by this discharge collide with the argon gas molecules, ionize the argon gas molecules, and this ionization proceeds to generate electron-excited plasma P. The flow rate of the argon gas and the discharge voltage at this time are adjusted to values at which discharge according to Passinin's law is started. Further, the plasma P generated in the plasma electron gun 9 is prevented from diverging by the magnetic field generated by the annular DC coil 13, and is focused in the central direction.

The electrons generated in the plasma P go straight and are accelerated toward the inside of the vacuum chamber 1. In addition,
Although not shown, an acceleration electrode is provided between the discharge electrode 12 and the chamber 1 so that the electrons in the plasma P can be efficiently extracted. In the vacuum chamber 1,
The filament 4 is heated to emit electrons and the crucible 2
The material 3 to be evaporated therein is irradiated with electrons. The material 3 is heated and evaporated by irradiation with electrons. The evaporated material collides with electrons from the plasma electron gun 9 in the vacuum chamber 1 and is ionized and activated to generate plasma. The ionized material in the plasma is attracted to the substrate 6a and adheres to the substrate 6a for ion plating. If the reaction gas is supplied from the supply pipe 8 simultaneously with the evaporation of the material 3 in the crucible 2, a substance based on the reaction between the evaporation material and the reaction gas can be attached to the substrate. For example, when the evaporation material is silicon and the reaction gas is oxygen gas, the substrate is made of silicon dioxide (S
iO ₂ ) is ion plated.

[0005]

In the ion plating apparatus described above, the distribution of evaporated particles in the chamber 1 is large near the upper part of the evaporation source (crucible 2) and becomes smaller as the distance from the crucible increases. On the other hand, the electrons generated from the plasma electron gun 9 and accelerated toward the inside of the vacuum chamber 1 diffuse in the chamber 1 and do not necessarily collide efficiently with the evaporated particles, and a considerable amount of the electrons is generated in the crucible 2.
The vacuum chamber 1
It collides with the side wall of and disappears. Therefore, the above device has a drawback that the utilization efficiency of electrons from the plasma electron gun is poor.

The present invention has been made in view of the above points, and an object thereof is to realize an ion plating apparatus which is excellent in utilization efficiency of electrons from a plasma electron gun.

[0007]

An ion plating apparatus according to the present invention includes a chamber, an evaporation source provided in the chamber, a substrate to which particles evaporated from the evaporation source are attached, and a side portion of the chamber. A plasma electron gun provided to generate an electron beam for ionizing the vaporized particles in the chamber, and an insulating member arranged above the vaporization source in the chamber for guiding the vaporized particles from the vaporization source toward the substrate. It is placed between the formed funnel-shaped member and the electron beam emission port of the plasma electron gun to the side of the funnel-shaped member in the chamber, and is made of an insulating material for efficiently guiding the electron beam into the funnel-shaped member. And a hollow member that has been formed.

[0008]

The ion plating device based on the present invention is
A funnel-shaped member is arranged on the evaporation source, and an electron beam from a plasma electron gun is introduced through a hollow member formed of an insulating material and connected to the inside of the funnel-shaped member.

[0009]

Embodiments of the present invention will now be described in detail with reference to the drawings. 2 shows an ion plating apparatus according to the present invention, and the same parts as those of the conventional apparatus of FIG. 1 are designated by the same reference numerals. The difference between this embodiment and the conventional apparatus of FIG. 1 is that an inverted conical funnel member 25 is provided above the crucible 2 inside the chamber 1, and further the plasma electron gun 9 is used.
A cylindrical electron beam guide tube 26 is provided between the side of the funnel member 25 and the funnel member 25. Both the funnel member 25 and the guide tube 26 are made of quartz glass. With this configuration, the electron beam generated from the plasma electron gun 9 is introduced into the chamber 1 through the electron beam emission port E, and the electron beam travels inside the guide tube 26. The guide tube 26 is formed of an insulating material. First, the inner surface of the guide tube 26 is negatively charged by the collision of the electron beam, and after charging, acts so as to reflect the electron beam.
As a result, the electron beam introduced into the guide tube 26 is
Most of the electron beams travel while being reflected by the inner surface of the guide tube 26, and are guided into the funnel member 25 from the lower side portion of the funnel member 25.

On the other hand, the material 3 in the crucible 2 is evaporated by the irradiation of electrons from the filament 4, and the evaporated particles are introduced into the member from the thin portion below the funnel member 25. The vaporized particles diffuse upward in the member 25, but at this time, the electron beam from the plasma electron gun 9 also diffuses upward with substantially the same direction as the vaporized particles from the crucible 2 and with a similar particle distribution. . As a result, the funnel-shaped member 2
The electron beam and the vaporized particles collide with each other in the interior 5 efficiently and the ionization of the particles is promoted. The electron beam that has not collided with the evaporated particles collides with the substrate 6a and improves the reactivity on the substrate 6a.

Although the embodiment of the present invention has been described above, the present invention is not limited to this embodiment. For example, a conical member is used as the funnel-shaped member, but another shape such as a hemispherical shape having a small opening diameter in the portion close to the crucible 2 and a large opening diameter in the portion close to the substrate 6a can be used. Although the funnel-shaped member and the guide tube are made of quartz glass, other insulating members can be used.

[0012]

As described above, in the ion plating apparatus according to the present invention, the funnel-shaped member is arranged on the evaporation source, and the plasma is passed through the hollow member formed of an insulating material and connected to the inside of the funnel-shaped member. Since the electron beam from the electron gun is introduced, the utilization efficiency of electrons from the plasma electron gun can be improved, the ionization efficiency can be significantly improved, and high-density ion plating can be performed.

[Brief description of drawings]

FIG. 1 is a diagram showing a conventional ion plating apparatus.

FIG. 2 is a diagram showing an embodiment of an ion plating apparatus according to the present invention.

[Explanation of symbols]

 1 vacuum chamber 2 crucible 3 material to be evaporated 4 filament 6a substrate 8 reaction gas supply pipe 9 plasma electron gun 20 power supply 21 exhaust pipe 25 funnel-shaped member 26 electron beam guide pipe

Claims (1)

[Claims] 1. A chamber, an evaporation source provided in the chamber, a substrate to which particles evaporated from the evaporation source are attached, and an electron provided at a side portion of the chamber for ionizing the evaporation particles in the chamber. A plasma electron gun that generates a beam and is placed above the evaporation source in the chamber,
The funnel-shaped member formed of an insulating member for guiding the vaporized particles from the evaporation source toward the substrate, and the electron-shaped member disposed between the electron beam emission port of the plasma electron gun and the side of the funnel-shaped member in the chamber, An ion plating device comprising: a hollow member formed of an insulating material for efficiently guiding a beam into the funnel-shaped member.