JPH06171962A - Die for forming glass and its production - Google Patents

Die for forming glass and its production

Info

Publication number
JPH06171962A
JPH06171962A JP32770392A JP32770392A JPH06171962A JP H06171962 A JPH06171962 A JP H06171962A JP 32770392 A JP32770392 A JP 32770392A JP 32770392 A JP32770392 A JP 32770392A JP H06171962 A JPH06171962 A JP H06171962A
Authority
JP
Japan
Prior art keywords
film
carbon
mold
die
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP32770392A
Other languages
Japanese (ja)
Other versions
JP2740607B2 (en
Inventor
Koichi Yamaguchi
浩一 山口
Takahiro Okura
貴博 大蔵
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kyocera Corp
Original Assignee
Kyocera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyocera Corp filed Critical Kyocera Corp
Priority to JP4327703A priority Critical patent/JP2740607B2/en
Publication of JPH06171962A publication Critical patent/JPH06171962A/en
Application granted granted Critical
Publication of JP2740607B2 publication Critical patent/JP2740607B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B11/00Pressing molten glass or performed glass reheated to equivalent low viscosity without blowing
    • C03B11/06Construction of plunger or mould
    • C03B11/08Construction of plunger or mould for making solid articles, e.g. lenses
    • C03B11/084Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor
    • C03B11/086Construction of plunger or mould for making solid articles, e.g. lenses material composition or material properties of press dies therefor of coated dies
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/10Die base materials
    • C03B2215/12Ceramics or cermets, e.g. cemented WC, Al2O3 or TiC
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/14Die top coat materials, e.g. materials for the glass-contacting layers
    • C03B2215/26Mixtures of materials covered by more than one of the groups C03B2215/16 - C03B2215/24, e.g. C-SiC, Cr-Cr2O3, SIALON
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03BMANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B2215/00Press-moulding glass
    • C03B2215/02Press-mould materials
    • C03B2215/08Coated press-mould dies
    • C03B2215/30Intermediate layers, e.g. graded zone of base/top material
    • C03B2215/34Intermediate layers, e.g. graded zone of base/top material of ceramic or cermet material, e.g. diamond-like carbon

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

PURPOSE:To improve durability by introducing specific reactive gases into a reaction chamber where a die base body is installed, heating this die base body and irradiating the base body with a UV laser beam to effect reaction, thereby forming a release film contg. carbon nitride on the surface thereof. CONSTITUTION:The die base material 1 of the die for forming glass formed with an SiC film as a ground surface film on a forming surface consisting of an SiC sintered body, etc., is set in the reaction chamber 2 and after the pressure in the chamber is reduced down to 0.1 to 200Torr, the base body is heated to 300 to 1000 deg.C by a heater 3. The reactive gases consisting of C-contg. gases, such as C2H2 and CH4 and N-contg. gases, such as NH3 at a ratio of C/N=1/10 to 10/1 are introduced together with a carrier gas into the reaction chamber 2. The reactive gases are brought into reaction by irradiating the die base body 1 via a mirror 8 and a laser beam introducing window 5 from the outside of the reaction chamber 2, by which the release film of 0.1 to 5mum film thickness contg. the carbon nitride expressed by CxNy (x is 1 to 6, y is 1 to 8) is formed and the die for forming glass having excellent durability is obtd. Gaseous H2 is returned to protect the laser beam introducing window and waste gases are treated with waste gas treatment device 9.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ガラス光学素子などを
プレス成形により製造するための成形型とその製造方法
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mold for manufacturing glass optical elements and the like by press molding and a manufacturing method thereof.

【0002】[0002]

【従来の技術】レンズやプリズム等のガラス光学素子を
製造するのに、加熱軟化したガラス素材をプレス成形す
ることにより製造する方法が近年急速に発展している。
このプレス成形で用いられる成形型の成形面表面には、
通常、ガラスの成形型への融着を防ぎ、高精度に加工さ
れた成形型を保護することを目的として離型膜が形成さ
れている。よって、この離型膜には成形型との密着性、
ガラスとの離型性、耐酸化性、平滑性、高硬度等の膜特
性が要求される。
2. Description of the Related Art Recently, a method of manufacturing a glass optical element such as a lens or a prism by press-molding a glass material which has been softened by heating has been rapidly developed.
On the molding surface of the mold used in this press molding,
Usually, a release film is formed for the purpose of preventing fusion of glass to a molding die and protecting the molding die processed with high precision. Therefore, the release film has good adhesion to the mold,
Film characteristics such as releasability from glass, oxidation resistance, smoothness, and high hardness are required.

【0003】従来、これらの要求に対して金属、セラミ
ックス等からなる型基体表面に種々の材料からなる離型
膜を形成することが提案がされている。例えば、特公平
3−61617号公報には、セラミックよりなる型基体
の表面に炭化ケイ素(SiC)を被覆し、その上に窒化
ホウ素を被覆してなる光学素子成形金型が、また、特公
平3−61615号公報にはcBN及びaBNの混在し
た薄膜を形成した光学素子成形金型へ適応する事が提案
されている。その他にも、特開平2−120245号公
報および特開平2−243523号公報には基体の表面
に炭化物、窒化物から成る中間層を形成し、その上に硬
質カーボン膜またはダイヤモンド膜が被覆された光学素
子成形金型が提案されている。
In response to these requirements, it has been proposed to form a release film made of various materials on the surface of a mold base made of metal, ceramics or the like. For example, Japanese Patent Publication No. 3-61617 discloses an optical element molding die in which the surface of a mold base made of ceramic is coated with silicon carbide (SiC), and boron nitride is coated thereon. Japanese Patent Laid-Open No. 3-61615 proposes to apply to an optical element molding die in which a thin film in which cBN and aBN are mixed is formed. In addition, in JP-A-2-120245 and JP-A-2-243523, an intermediate layer made of a carbide or a nitride is formed on the surface of a substrate, and a hard carbon film or a diamond film is coated thereon. An optical element molding die has been proposed.

【0004】[0004]

【発明が解決しようとする問題点】上記の従来技術にお
いて、カーボンまたはダイヤモンドからなる離型膜は、
BK7等の鉛を含有しないガラス材料のプレス成形には
適しており、1000回以上の成形耐久性を得ている。
ところが、SF6等のように鉛を含有したガラス材料の
プレス成形では、ガラス成分中の鉛がカーボン膜または
ダイヤモンド膜の炭素により還元され、成形したガラス
光学素子の表面に微少量析出し、表面を白濁させ、表面
粗さを低下させてしまう。更に、この析出鉛により離型
膜の表面には引っかき傷が無数に発生し、離型膜の耐久
性を著しく劣化させていた。
DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention In the above prior art, the release film made of carbon or diamond is
It is suitable for press molding of lead-free glass materials such as BK7 and has a molding durability of 1000 times or more.
However, in press molding of a glass material containing lead such as SF6, the lead in the glass component is reduced by the carbon of the carbon film or the diamond film, and a very small amount is deposited on the surface of the molded glass optical element. It becomes cloudy and reduces the surface roughness. Further, the deposited lead causes countless scratches on the surface of the release film, which significantly deteriorates the durability of the release film.

【0005】また一方、BNの離型膜は、SF6等のよ
うにBを含有しないガラス材料のプレス成形には適して
おり、1000回以上の成形耐久性を得ている。ところ
が、BK7等のBを含有するガラス材料では、BN膜の
表面に生成した酸化ホウ素層とガラスとが反応する。そ
して、ガラスの付着により離型膜の表面粗さを低下さ
せ、耐久性を著しく劣化させていた。
On the other hand, the release film of BN is suitable for press molding of a glass material containing no B such as SF6, and has a molding durability of 1000 times or more. However, in a glass material containing B such as BK7, the boron oxide layer formed on the surface of the BN film reacts with the glass. Then, the adhesion of the glass lowers the surface roughness of the release film, which significantly deteriorates the durability.

【0006】[0006]

【課題を解決するための手段】本発明は、従来における
上記の問題点を解消するために離型膜の種類について検
討を重ねた結果、離型膜を窒化炭素により構成すること
により、ダイヤモンドと同等以上の高い硬度を有すると
ともに、鉛含有のガラスの成形においても何ら問題のな
いことを見出し、本発明に至った。
According to the present invention, as a result of repeated studies on the types of release films in order to solve the above-mentioned problems in the prior art, diamond is formed by forming the release film from carbon nitride. The inventors of the present invention have found that they have high hardness equal to or higher than that, and that they have no problem in molding lead-containing glass, and thus reached the present invention.

【0007】更に、上記成形用型を製造する方法とし
て、型基体が設置された反応室内に窒素含有ガスと炭素
含有ガスからなる反応ガスを導入するとともに、前記型
基体を300〜1000℃の温度に加熱すると同時に、
該型基体表面に紫外線レーザ光を照射することにより、
前記窒素含有ガスと炭素含有ガスとを反応せしめ、前記
型基板表面に窒化炭素を含有する離型膜を形成するか、
または炭素あるいは炭素を含有する物質を蒸着源より蒸
発させ、型基体表面に炭素を蒸着すると同時に、窒素イ
オンあるいは窒素含有イオンを前記型基体表面に照射
し、前記型基体表面に窒化炭素からなる離型膜を形成す
ることを特徴とするものである。
Further, as a method for producing the above-mentioned molding die, a reaction gas composed of a nitrogen-containing gas and a carbon-containing gas is introduced into a reaction chamber in which the die substrate is installed, and the die substrate is heated to a temperature of 300 to 1000 ° C. While heating to
By irradiating the surface of the mold substrate with an ultraviolet laser beam,
Or reacting the nitrogen-containing gas and the carbon-containing gas to form a release film containing carbon nitride on the mold substrate surface,
Alternatively, carbon or a substance containing carbon is evaporated from a vapor deposition source to deposit carbon on the surface of the mold substrate, and at the same time, the surface of the mold substrate is irradiated with nitrogen ions or nitrogen-containing ions to separate the surface of the mold substrate from carbon nitride. It is characterized by forming a mold film.

【0008】以下、本発明を詳述する。本発明によれ
ば、ガラス成形用型のガラス成形面に窒化炭素からなる
硬質をガラスの離型膜として形成する。窒化炭素とは、
一般式CxNyで表され、xが1〜6、yが1〜8の範
囲の化合物であり、典型的な化合物としては、C3 4
が知られている。この窒化炭素からなる離型膜は0.1
〜5μmの厚みで形成されることが望ましい。
The present invention will be described in detail below. According to the present invention, a hard material made of carbon nitride is formed as a glass release film on the glass molding surface of the glass molding die. What is carbon nitride?
A compound represented by the general formula CxNy, in which x is in the range of 1 to 6 and y is in the range of 1 to 8, and a typical compound is C 3 N 4
It has been known. The release film made of carbon nitride is 0.1
It is desirable to be formed with a thickness of ˜5 μm.

【0009】一方、本発明のガラス成形用型における型
基体は、炭化ケイ素、窒化ケイ素、超硬合金、Cr2
3 などから構成され、その表面粗さは平均表面粗さRa
で1μm以下であることが望ましく、表面粗さが大きく
なると窒化炭素膜との密着性が低下し窒化炭素膜の硬度
が低下するためである。
On the other hand, the mold base in the glass molding mold of the present invention is made of silicon carbide, silicon nitride, cemented carbide, or Cr 2 O.
It is composed of 3 etc., and its surface roughness is the average surface roughness Ra.
Is preferably 1 μm or less, and when the surface roughness increases, the adhesion to the carbon nitride film decreases and the hardness of the carbon nitride film decreases.

【0010】さらに、窒化炭素は熱膨張係数が3〜5×
10-6/℃の化合物であるが、型基体との熱膨張差が大
きい場合、型基体と窒化炭素からなる離型膜の間に炭素
やケイ素などからなる中間層を形成すると、熱膨張差な
どに起因する離型膜の剥離を防止することができる。例
えば、型基体として炭化珪素焼結体を選択した場合に
は、中間層として窒化ケイ素を形成すればよい。
Further, carbon nitride has a coefficient of thermal expansion of 3 to 5 ×.
Although it is a compound of 10 −6 / ° C., when the difference in thermal expansion between the mold base and the mold base is large, when an intermediate layer made of carbon or silicon is formed between the mold base and the mold release film made of carbon nitride, the difference in thermal expansion becomes. It is possible to prevent the release film from being peeled off due to such reasons. For example, when a silicon carbide sintered body is selected as the mold base, silicon nitride may be formed as the intermediate layer.

【0011】次に、本発明のガラス形成用型の製造方法
について説明する。図1は、本発明における製造方法の
一実施例である光CVD装置の概略図を示した。図1
中、1はガラス成形用型基体、2は反応室、3は加熱ヒ
ータである。
Next, a method for manufacturing the glass forming mold of the present invention will be described. FIG. 1 shows a schematic view of a photo-CVD apparatus which is an embodiment of the manufacturing method according to the present invention. Figure 1
Inside, 1 is a glass molding die substrate, 2 is a reaction chamber, and 3 is a heater.

【0012】本発明によれば、型基体1は加熱ヒータ3
により加熱され、また、紫外線レーザ装置4からレーザ
光がレーザ光導入窓5を介して型基体1表面に照射され
ている。そこに、炭素含有ガスと窒素含有ガスからなる
反応ガスをキャリアガスとともに反応室2内へ導入す
る。反応室内に導入された反応ガスは型基体表面で加熱
およびレーザ光の照射により励起され、炭素含有ガスと
窒素含有ガスはそれぞれ分解され、炭素原子と窒素原子
が生成され、これらの結合により窒化炭素が生成され、
型基体表面に析出する。
According to the present invention, the mold base 1 comprises a heater 3
And is irradiated with laser light from the ultraviolet laser device 4 through the laser light introduction window 5 onto the surface of the die substrate 1. There, a reaction gas composed of a carbon-containing gas and a nitrogen-containing gas is introduced into the reaction chamber 2 together with a carrier gas. The reaction gas introduced into the reaction chamber is excited on the surface of the mold substrate by heating and irradiation with laser light, the carbon-containing gas and the nitrogen-containing gas are decomposed, carbon atoms and nitrogen atoms are generated, and carbon nitride is formed by these bonds. Is generated,
Precipitates on the surface of the mold substrate.

【0013】この時の成膜条件として、型基体1は30
0〜1000℃に加熱され、また反応室2内の圧力は
0.1〜200torrに設定される。この時の型基体
の温度が上記範囲を逸脱すると窒化炭素は生成されな
い。また、成膜において用いられる炭素含有ガスとして
は、CH4 、C2 4 、C2 6 、C3 8 、C
4 10、CO2 およびCOなどが挙げられ、窒素含有ガ
スとしては、N2 、NH3 、N24 などが用いられる
が、炭素と窒素の両者を含有するCH3 NH4 、NH
(CH3 2 、N2 2 (CH3 2 およびN(C
3 3 などを用いると1種類のガスで炭素含有ガスと
窒素含有ガスを兼ね備えることもできる。これらの反応
ガス中の炭素と窒素量はC:N=1〜10:10〜1の
範囲となるように制御される。
As a film forming condition at this time, the mold base 1 is 30
It is heated to 0 to 1000 ° C., and the pressure in the reaction chamber 2 is set to 0.1 to 200 torr. If the temperature of the mold substrate at this time deviates from the above range, carbon nitride will not be generated. Further, as the carbon-containing gas used in the film formation, CH 4 , C 2 H 4 , C 2 H 6 , C 3 H 8 and C are used.
4 H 10 , CO 2 , CO and the like, and as the nitrogen-containing gas, N 2 , NH 3 , N 2 H 4, etc. are used, but CH 3 NH 4 , NH containing both carbon and nitrogen is used.
(CH 3 ) 2 , N 2 H 2 (CH 3 ) 2 and N (C
When H 3 ) 3 or the like is used, it is possible to combine both carbon-containing gas and nitrogen-containing gas with one type of gas. The amounts of carbon and nitrogen in these reaction gases are controlled so that C: N = 1 to 10:10 to 1.

【0014】次に、本発明のガラス成形用型の他の製造
方法としてイオンビームスパッタ法について説明する。
図2はイオンビームスパッタ装置の概略配置図である。
図中、11は型基体、12はターゲット、13はイオン
ビームスパッタ用イオン源、14はイオン照射用イオン
源である。かかる装置によれば、ターゲット12として
黒鉛、CrC,TiC,TaC,ポリイミド樹脂などの
炭素または炭素含有物質を設置し、そこに、イオンビー
ムスパッタ用イオン源13よりArやXeなどのイオン
ビームを照射してターゲットから黒鉛を蒸発させ、型基
体11の表面に蒸着させる。それと同時にイオン照射用
イオン源14からアルゴンなどの不活性ガスからなるキ
ャリアガスと、窒素含有ガスとの混合ガスのイオンを照
射することにより、型基体の表面にて炭素イオンと窒素
イオンが結合し窒化炭素が生成される。
Next, an ion beam sputtering method will be described as another method of manufacturing the glass molding die of the present invention.
FIG. 2 is a schematic layout of the ion beam sputtering apparatus.
In the figure, 11 is a mold substrate, 12 is a target, 13 is an ion beam sputtering ion source, and 14 is an ion irradiation ion source. According to this apparatus, carbon or a carbon-containing substance such as graphite, CrC, TiC, TaC, or polyimide resin is installed as the target 12, and an ion beam such as Ar or Xe is irradiated from the ion source 13 for ion beam sputtering. Then, graphite is evaporated from the target and deposited on the surface of the mold base 11. At the same time, by irradiating the ions of a mixed gas of a nitrogen-containing gas and a carrier gas made of an inert gas such as argon from the ion source 14 for ion irradiation, carbon ions and nitrogen ions are bonded on the surface of the mold substrate. Carbon nitride is produced.

【0015】なお、この時の反応室内の圧力は10-4
10-6torr、基体温度は25〜500℃、型基体に
照射するイオンのエネルギーは0.1〜40keVに設
定される。また、蒸着速度とイオンビーム照射量を制御
することにより容易に窒化炭素のC/N比を制御するこ
とができる。
The pressure in the reaction chamber at this time is 10 -4 ~
The substrate temperature is set to 10 to 6 torr, the temperature of the substrate is set to 25 to 500 ° C., and the energy of the ions to be applied to the die substrate is set to 0.1 to 40 keV. Further, the C / N ratio of carbon nitride can be easily controlled by controlling the vapor deposition rate and the ion beam irradiation amount.

【0016】このイオンビームスパッタ法によれば、窒
化炭素の生成を行う前に、蒸着速度とイオン照射時のイ
オンエネルギーを比較的高くすることによりイオンを基
板表面に埋め込むことがで、これにより型基体と離型膜
の間に基体成分と膜成分との混合層を形成することがで
き、かかる中間層上に窒化炭素膜を生成することにより
窒化炭素離型膜の型基体への付着強度を向上させること
ができる。
According to this ion beam sputtering method, the ions can be embedded in the substrate surface by relatively increasing the deposition rate and the ion energy at the time of ion irradiation before the carbon nitride is generated. A mixed layer of a substrate component and a film component can be formed between the substrate and the release film, and by forming a carbon nitride film on such an intermediate layer, the adhesion strength of the carbon nitride release film to the mold substrate can be improved. Can be improved.

【0017】さらに、窒化炭素の成膜を行う前に、2K
eV程度のイオンビームのみを基体に照射すると、型基
体表面に付着した汚れを除去することができる。
Furthermore, before the carbon nitride film is formed, 2K
By irradiating the substrate only with an ion beam of about eV, it is possible to remove the dirt attached to the surface of the mold substrate.

【0018】また、上記イオンビームスパッタ法によれ
ば、上記の構成に加え、ターゲットとして金属炭化物、
金属窒化物あるいは有機樹脂を用い、窒化炭素の生成と
これらの蒸着を同時に行うと、窒化炭素と金属炭化物、
金属窒化物あるいは金属炭窒化物との複合体膜を形成す
ることもできる。
According to the above ion beam sputtering method, in addition to the above structure, a metal carbide as a target,
When metal nitride or organic resin is used and carbon nitride is produced and vapor-deposited at the same time, carbon nitride and metal carbide,
It is also possible to form a composite film with a metal nitride or a metal carbonitride.

【0019】[0019]

【作用】この窒化炭素は、炭素原子と窒素原子とが強い
化学結合した化合物であり、それ自体、ヌープ硬度30
00kg/mm2 以上、場合により5000kg/mm
2 以上のダイヤモンド膜と同等の硬度を有している。本
発明によれば、かかる窒化炭素をガラス成形面に離型膜
として形成することにより、ダイヤモンド膜を形成した
場合と同様にプレス成形時に傷が入り難く、優れた耐久
性を付与することができる。しかも、かかる構成によれ
ば、膜中の炭素が窒素と強固に結合しており、ダイヤモ
ンドと比較してガラスに対する還元作用が非常に小さい
ために、従来成形できなかった鉛を含有した光学ガラス
のプレス成形を可能にするものである。
[Function] This carbon nitride is a compound in which a carbon atom and a nitrogen atom are strongly chemically bonded.
00 kg / mm 2 or more, 5000 kg / mm in some cases
It has the same hardness as two or more diamond films. According to the present invention, by forming such carbon nitride as a release film on the glass molding surface, scratches are unlikely to be formed during press molding as in the case of forming a diamond film, and excellent durability can be imparted. . Moreover, according to such a structure, carbon in the film is strongly bonded to nitrogen, and since the reducing action on glass is extremely small compared to diamond, the optical glass containing lead that could not be conventionally formed is It enables press molding.

【0020】[0020]

【実施例】以下、本発明の実施例を説明する。 実施例1 ガラス光学素子成形型の型基体1としてSiC(炭化ケ
イ素)焼結体を用い、その成形面にCVD法により予め
下地層としてSiC膜を厚さ数100μm形成した後、
SiC膜の表面をRa=1nm以下になるように鏡面仕
上げした。この基体1を図1の光CVD装置の反応室2
にセットし、真空ポンプ6にて真空引きした後、加熱ヒ
ータ3により550℃に加熱した。そこに、C2 2
ス、CH4 ガス、NH3 ガス、H2 ガスの反応ガス7を
反応室2に導入した。そして反応室外より紫外線レーザ
4をミラー8、レーザ光導入窓5を介して型基体1の表
面に照射した。レーザ光導入窓5にはレーザ導入窓保護
ガスとして水素ガス10を20SCCMの流量で流し、
また真空引きの際の排気ガスは排ガス処理設備9で処理
した。
EXAMPLES Examples of the present invention will be described below. Example 1 A SiC (silicon carbide) sintered body was used as the mold base 1 of the glass optical element molding die, and a SiC film was formed as a base layer in advance to a thickness of several 100 μm on the molding surface by the CVD method.
The surface of the SiC film was mirror-finished so that Ra = 1 nm or less. This substrate 1 is attached to the reaction chamber 2 of the photo CVD apparatus of FIG.
Was set to, and after being evacuated by the vacuum pump 6, it was heated to 550 ° C. by the heater 3. The reaction gas 7 of C 2 H 2 gas, CH 4 gas, NH 3 gas, and H 2 gas was introduced into the reaction chamber 2. Then, the surface of the mold substrate 1 was irradiated with the ultraviolet laser 4 from outside the reaction chamber through the mirror 8 and the laser light introduction window 5. Hydrogen gas 10 as a laser introduction window protective gas is caused to flow through the laser light introduction window 5 at a flow rate of 20 SCCM,
Further, the exhaust gas at the time of evacuation was processed by the exhaust gas processing facility 9.

【0021】上記光CVD法において、表1に示すよう
に原料ガスの輸送条件を変えて緻密で平坦な成膜を行っ
た。成膜した膜に対して、X線回折測定による結晶相の
同定、AESによる膜組成、ヌープ硬度およびSF6
(鉛含有ガラス)によるプレス成形耐久試験を行い、プ
レスしたガラスの表面が白濁するまでの回数を測定し、
その結果を表1に示した。
In the above photo-CVD method, as shown in Table 1, the conditions for transporting the raw material gas were changed to form a dense and flat film. Identification of crystal phase by X-ray diffraction measurement, film composition by AES, Knoop hardness and SF6
Perform press molding durability test with (lead-containing glass), measure the number of times until the surface of the pressed glass becomes cloudy,
The results are shown in Table 1.

【0022】[0022]

【表1】 [Table 1]

【0023】測定の結果、いずれの膜にも窒化炭素の結
晶相が検出された。また、表1に示されるように、いず
れも高い硬度を有し、鉛含有ガラスのプレス成形におい
ても鉛の析出な全く認められず、いずれも1000回以
上のプレス耐久性能が得られ、ガラスとの離型性に優れ
たものであった。
As a result of the measurement, a crystal phase of carbon nitride was detected in all the films. Further, as shown in Table 1, all of them have high hardness, and no lead precipitation is observed even in press molding of lead-containing glass, and both press durability performances of 1000 times or more are obtained, and Was excellent in releasability.

【0024】実施例2 ガラス成形用型基体として超硬合金を用い、これを図2
のイオンビームスパッタ装置内に設置した。ターゲット
12に黒鉛をセットし反応室を10-6torr以下に真
空引きした。イオンビームスパッタ用イオン源13より
Arイオンビームをターゲット12に照射し、型基体1
1の表面に黒鉛を約1nm/minの蒸着速度で蒸着す
ると同時にイオン照射用イオン源14からAr/N2
0.3の混合ガスのイオンを40keVの加速電圧で照
射し、ミキシング時間を表2のように変えて型表面にi
−カーボンからなる中間層を厚みを変えて種々成膜し
た。
Example 2 A cemented carbide was used as a glass molding die substrate, and this was used as shown in FIG.
It was installed in the ion beam sputtering apparatus of. Graphite was set on the target 12 and the reaction chamber was evacuated to 10 -6 torr or less. The target 12 is irradiated with Ar ion beam from the ion source 13 for ion beam sputtering, and the mold substrate 1
Graphite is deposited on the surface of No. 1 at a deposition rate of about 1 nm / min, and at the same time Ar / N 2 =
Ions of a mixed gas of 0.3 are irradiated at an acceleration voltage of 40 keV, the mixing time is changed as shown in Table 2, and
-Various thicknesses of the carbon intermediate layer were formed.

【0025】成膜を行った。その後、Ar/N2 =0.
3の混合ガスのイオンを10keVの加速電圧で照射し
ながら、C/N組成比が約0.75になるように蒸着速
度を制御して、窒化炭素膜を約300nmの厚さに成膜
した。そして、ミキシング処理時間の異なる複数の膜に
ついてヌープ硬度を測定し、表2に示した。
A film was formed. After that, Ar / N 2 = 0.
While irradiating the ions of the mixed gas of 3 at an accelerating voltage of 10 keV, the deposition rate was controlled so that the C / N composition ratio was about 0.75, and a carbon nitride film was formed to a thickness of about 300 nm. . Then, Knoop hardness was measured for a plurality of films having different mixing treatment times, and shown in Table 2.

【0026】[0026]

【表2】 [Table 2]

【0027】表2によれば、ミキシング処理を行うこと
により窒化炭素膜の硬度が向上した。これは、離型膜の
型基体との密着性が上昇したためと考えられる。
According to Table 2, the hardness of the carbon nitride film was improved by performing the mixing treatment. It is considered that this is because the adhesiveness of the release film to the mold substrate is increased.

【0028】更に、上記と同様な条件にて成膜するに当
たり、基体の種類とその表面の表面粗さの影響を調べ
た。窒化炭素の成膜条件は表2の試料No.4と同じで行
った。
Further, when forming a film under the same conditions as above, the influence of the type of substrate and the surface roughness of its surface was investigated. The film forming conditions of carbon nitride were the same as those of sample No. 4 in Table 2.

【0029】このときの型基体の表面粗さとヌープ硬
度、ガラス成形耐久試験における耐久回数(SF6等の
鉛を含有した光学材料のプレス成形回数)との関係を調
べ、その結果を表3に示した。
At this time, the relationship between the surface roughness of the mold substrate, the Knoop hardness, and the number of times of endurance in the glass forming endurance test (the number of times of press molding of the optical material containing lead such as SF6) was examined, and the results are shown in Table 3. It was

【0030】[0030]

【表3】 [Table 3]

【0031】表3によれば、基体の表面粗さRaが約1
00nm以下であるとミキシング効果がよく得られ、離
型性の良い膜が得られた。また、この離型膜は、ヌープ
硬度3000〜4000kg/mm2 の高硬度な窒化炭
素薄膜であり、成形耐久回数は1000回以上の優れた
ものであった。
According to Table 3, the surface roughness Ra of the substrate is about 1.
When the thickness is 00 nm or less, a good mixing effect was obtained, and a film having good releasability was obtained. The release film was a high-hardness carbon nitride thin film having a Knoop hardness of 3000 to 4000 kg / mm 2 , and was excellent in molding durability of 1000 times or more.

【0032】実施例3 実施例2と同じ装置を用いて、黒鉛、CrC、TiC、
TaCおよびポリイミド樹脂の5種類の中から1種また
は2種を選択し、これをイオンビームスパッタ用ターゲ
ットとして、照射イオンおよびそのイオンエネルギーを
表4に示す条件に設定して成膜を行った。その他の成膜
条件は表3の試料No.12と同様である。得られた膜に
対してX線回折測定により膜中の結晶相の同定を行い、
さらに、ヌープ硬度およびプレス成形耐久回数を測定し
た。結果は表4に示した。
Example 3 Using the same equipment as in Example 2, graphite, CrC, TiC,
One kind or two kinds were selected from the five kinds of TaC and polyimide resin, and this was used as a target for ion beam sputtering, and irradiation ions and their ion energies were set to the conditions shown in Table 4 to form a film. Other film forming conditions are the same as those of Sample No. 12 in Table 3. The crystal phase in the film is identified by X-ray diffraction measurement on the obtained film,
Further, the Knoop hardness and the number of times of press molding durability were measured. The results are shown in Table 4.

【0033】[0033]

【表4】 [Table 4]

【0034】表4から明らかなように、窒化炭素からな
る膜、または窒化炭素と金属炭窒化物からなる複合体膜
が生成され、しかもこれらの膜はいずれもヌープ硬度3
000〜4000kg/mm2 の高い硬度を有し、しか
もガラス成形において耐久回数は1000回以上と優れ
た離型膜であることがわかった。
As is apparent from Table 4, a film made of carbon nitride or a composite film made of carbon nitride and metal carbonitride was produced, and each of these films had a Knoop hardness of 3
It was found that the release film had a high hardness of 000 to 4000 kg / mm 2 and an excellent durability of 1000 times or more in glass molding.

【0035】[0035]

【発明の効果】以上詳述したように、本発明によれば、
ガラス成形面に離型膜として窒化炭素を含有する硬質膜
を形成することにより、優れたプレス耐久性を付与する
ことができる。しかも、SF6等の鉛を含有した光学材
料のプレス成形においても、鉛と化学的に反応しないた
め、鉛の析出がなく鉛を含有した光学ガラスのプレスの
成形を可能にした。
As described in detail above, according to the present invention,
By forming a hard film containing carbon nitride as a release film on the glass molding surface, excellent press durability can be imparted. Moreover, even when press-molding an optical material containing lead such as SF6, since it does not chemically react with lead, it is possible to press-mold an optical glass containing lead without lead precipitation.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の実施例における光CVD法による成膜
装置の概略図である。
FIG. 1 is a schematic view of a film forming apparatus by a photo CVD method according to an embodiment of the present invention.

【図2】本発明の実施例におけるイオンビームスパッタ
法による成膜装置の概略図である。
FIG. 2 is a schematic diagram of a film forming apparatus by an ion beam sputtering method in an example of the present invention.

【符号の説明】[Explanation of symbols]

1、11 型基体 2 反応室 3 加熱ヒータ 4 紫外線レーザ 12 ターゲット 13 イオンビームスパッタ用イオン源 14 イオン照射用イオン源 1, 11 type substrate 2 reaction chamber 3 heater 4 ultraviolet laser 12 target 13 ion source for ion beam sputtering 14 ion source for ion irradiation

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】型基体のガラス成形面に窒化炭素を含有す
る離型膜を形成したことを特徴とするガラス成形用型。
1. A mold for glass molding, wherein a mold-releasing film containing carbon nitride is formed on the glass molding surface of a mold base.
【請求項2】型基体が設置された反応室内に窒素含有ガ
スと炭素含有ガスからなる反応ガスを導入するととも
に、前記型基体を300〜1000℃の温度に加熱する
と同時に、該型基体表面に紫外線レーザ光を照射するこ
とにより、前記窒素含有ガスと炭素含有ガスとを反応せ
しめ、前記型基板表面に窒化炭素を含有する離型膜を形
成することを特徴とするガラス成形用型の製造方法。
2. A reaction gas comprising a nitrogen-containing gas and a carbon-containing gas is introduced into the reaction chamber in which the mold substrate is installed, and the mold substrate is heated to a temperature of 300 to 1000 ° C. By irradiating with an ultraviolet laser beam, the nitrogen-containing gas and the carbon-containing gas are caused to react with each other, and a mold release film containing carbon nitride is formed on the surface of the mold substrate. .
【請求項3】炭素あるいは炭素を含有する物質を蒸着源
より蒸発させ、型基体表面に炭素を蒸着すると同時に、
窒素イオンあるいは窒素含有イオンを前記型基体表面に
照射し、前記型基体表面に窒化炭素を含有する離型膜を
形成することを特徴とするガラス成形用型の製造方法。
3. Carbon or a substance containing carbon is evaporated from a vapor deposition source to vapor deposit carbon on the surface of the mold substrate, and at the same time,
A method for producing a glass molding die, which comprises irradiating the surface of the die substrate with nitrogen ions or nitrogen-containing ions to form a release film containing carbon nitride on the surface of the die substrate.
JP4327703A 1992-12-08 1992-12-08 Glass forming mold and manufacturing method thereof Expired - Fee Related JP2740607B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4327703A JP2740607B2 (en) 1992-12-08 1992-12-08 Glass forming mold and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4327703A JP2740607B2 (en) 1992-12-08 1992-12-08 Glass forming mold and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPH06171962A true JPH06171962A (en) 1994-06-21
JP2740607B2 JP2740607B2 (en) 1998-04-15

Family

ID=18202041

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4327703A Expired - Fee Related JP2740607B2 (en) 1992-12-08 1992-12-08 Glass forming mold and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JP2740607B2 (en)

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