JPH06168902A - Vertical boat - Google Patents
Vertical boatInfo
- Publication number
- JPH06168902A JPH06168902A JP33955392A JP33955392A JPH06168902A JP H06168902 A JPH06168902 A JP H06168902A JP 33955392 A JP33955392 A JP 33955392A JP 33955392 A JP33955392 A JP 33955392A JP H06168902 A JPH06168902 A JP H06168902A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- supporting
- support
- boat
- slit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、複数の支持部材を縦
方向に配列して、それらの支持部材に所定の間隔で形成
された複数のスリットにそれぞれ複数の半導体ウエハを
積載するための縦型ボートに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical arrangement for arranging a plurality of supporting members in a vertical direction and loading a plurality of semiconductor wafers on a plurality of slits formed at predetermined intervals on the supporting members. Regarding type boats.
【０００２】[0002]
【従来の技術】半導体ウエハの酸化・拡散処理工程で
は、多数の半導体ウエハをウエハ用ボートに積載して、
そのままウエハ用ボートを拡散炉内部に搬入して、そこ
で所望の熱処理を行う。2. Description of the Related Art In a semiconductor wafer oxidation / diffusion process, a large number of semiconductor wafers are loaded on a wafer boat,
The wafer boat is carried into the diffusion furnace as it is, and a desired heat treatment is performed therein.
【０００３】拡散炉の種類に応じて縦型ボートを使用し
たり、横型ボートを使用したりしている。A vertical boat or a horizontal boat is used depending on the type of diffusion furnace.
【０００４】従来の縦型ボートは、複数のウエハを水平
又はそれよりも少し傾斜した状態に支持するために複数
（例えば４本）の棒形状の支持部材が縦方向に配列され
ている。それらの支持部材には所定の間隔で複数のスリ
ットが形成されている。それらの複数のスリットにそれ
ぞれ複数の半導体ウエハを積載する。In a conventional vertical boat, a plurality of (for example, four) rod-shaped support members are vertically arranged to support a plurality of wafers horizontally or in a state in which they are slightly inclined. A plurality of slits are formed at predetermined intervals on those support members. A plurality of semiconductor wafers are loaded in the plurality of slits.
【０００５】従来の縦型ボートは、通常、全ての支持部
材が同一断面形状の棒材であった。例えば、断面形状は
円形や四角形などであった。このような断面形状の棒材
に形成されたスリットは、その奥底がウエハの外周に沿
ったアーク形状となっていた。換言すれば、スリットに
よって形成された支持面のウエハ円周方向の幅が小さか
った。In the conventional vertical boat, all the supporting members are usually rods having the same sectional shape. For example, the cross-sectional shape was circular or square. The slit formed on the bar having such a cross-sectional shape had an arc shape whose inner bottom was along the outer circumference of the wafer. In other words, the width of the supporting surface formed by the slit in the wafer circumferential direction was small.
【０００６】棒形状の支持部材に代えて支持棒に固定さ
れた円弧形状の板の内面にスリットを形成する従来例も
知られている。この場合も、スリットによって形成され
た支持面のウエハ円周方向の幅が小さかった。There is also known a conventional example in which a slit is formed on the inner surface of an arc-shaped plate fixed to a support rod instead of the rod-shaped support member. Also in this case, the width of the support surface formed by the slit in the wafer circumferential direction was small.
【０００７】[0007]
【発明が解決しようとする課題】ボートは、支持部材が
棒形状であっても板形状であっても支持部材によってウ
エハを支持した状態で熱処理時に高温にさらされる。す
ると、従来の縦型ボートは、ウエハ外周縁部を支持する
ものであるため、特にウエハが大きな寸法のものになる
につれて、ウエハはその重量で撓み量が増大する。その
結果、ウエハが変形したりスリップしたりして、いわゆ
る結晶転移が発生し、製品歩留に悪い影響を及ぼす。The boat is exposed to a high temperature during heat treatment while the wafer is supported by the supporting member regardless of whether the supporting member is rod-shaped or plate-shaped. Then, since the conventional vertical boat supports the outer peripheral edge of the wafer, the amount of bending of the wafer increases due to its weight, especially as the size of the wafer increases. As a result, the wafer is deformed or slips, so-called crystal transition occurs, which adversely affects the product yield.
【０００８】さらに、支持部材の支持面がウエハの外周
縁部のみと接触していると、特定の支持部材に荷重応力
が集中する。そのため、特にウエハが大きな寸法のもの
になるにつれて、スリップの発生頻度が増加する。Further, when the supporting surface of the supporting member is in contact with only the outer peripheral edge of the wafer, the load stress concentrates on the specific supporting member. Therefore, the frequency of slips increases, especially as the size of the wafer increases.
【０００９】ウエハをボートに出し入れするために、ウ
エハの挿入始端側に位置する１対の支持部材の間隔をウ
エハの外径よりも大きくしていた。そのため、ウエハを
ボートの所定位置に積載した状態で、ウエハの挿入始端
側に位置する支持部材の前方端と、ウエハの中心と、ウ
エハの挿入方向とのなす角度が９０度を僅かに（例えば
数度）越す構造にするのがせいぜいであるが、その様な
ものであると、ウエハの重心がウエハの挿入始端側に位
置する対向する２つの支持部材の前方端間又はその近傍
に位置することになり、ウエハの挿入始端側に位置する
支持部材に荷重負担が偏ってしまう。例えば、ウエハの
挿入始端側に位置する１対の支持部材に７０〜９０パー
セントの荷重応力が負荷される。In order to load and unload the wafer into and from the boat, the distance between the pair of support members located on the wafer insertion start side is made larger than the outer diameter of the wafer. Therefore, in a state where the wafers are loaded on the predetermined position of the boat, the angle formed between the front end of the support member located on the wafer insertion start side, the center of the wafer, and the wafer insertion direction is slightly smaller than 90 degrees (for example, It is best to use a structure that is several degrees apart, but in such a structure, the center of gravity of the wafer is located between the front ends of two opposing support members located on the wafer insertion start side or in the vicinity thereof. As a result, the load is unevenly distributed on the support member located on the insertion start end side of the wafer. For example, a load stress of 70 to 90% is applied to the pair of support members located on the insertion start end side of the wafer.
【００１０】また、熱処理時にボートの支持部材の支持
部分とウエハとの温度差による熱応力も複合的に加わっ
て、特にウエハが大きな寸法のものになるにつれて、ス
リップの発生頻度が増加する。Further, the thermal stress due to the temperature difference between the supporting portion of the supporting member of the boat and the wafer is also added during the heat treatment, and the frequency of slips increases especially as the wafer becomes larger.
【００１１】ウエハを熱処理するに際しては、拡散炉か
らの熱の伝達は輻射あるいは伝熱によるが、棒形状の支
持部材に所定の間隔で形成された複数のスリット（溝）
のところからのウエハへの伝熱もあり、局部的なウエハ
内部の温度分布の要因となっている。ウエハ自重及び熱
的温度分布による熱応力が、ウエハの挿入始端側に位置
する対向する１対の支持部材でのウエハのスリップ転移
の原因となり、ウエハの熱処理歩留を低下させていた。When heat-treating a wafer, heat is transferred from the diffusion furnace by radiation or heat transfer, but a plurality of slits (grooves) are formed in the rod-shaped support member at predetermined intervals.
There is also heat transfer from that location to the wafer, which is a factor of the local temperature distribution inside the wafer. The thermal stress due to the weight of the wafer and the thermal temperature distribution causes the slip transition of the wafer between the pair of opposing support members located on the insertion start end side of the wafer, thus lowering the heat treatment yield of the wafer.
【００１２】この発明は、このような従来技術の欠点を
解消して、大きな寸法のウエハを積載して熱処理をして
もスリップが生じないとともに、ウエハの撓み量を小さ
くできる縦型ボートを提供することを目的としている。The present invention solves the above-mentioned drawbacks of the prior art, and provides a vertical boat in which a large size wafer is loaded and heat treatment is not performed, and slippage does not occur, and the amount of wafer deflection can be reduced. The purpose is to do.
【００１３】[0013]
【課題を解決するための手段】本願発明は複数の支持部
材を縦方向に配列して、それらの支持部材に所定の間隔
で形成された複数のスリットにそれぞれ複数の半導体ウ
エハを積載するための縦型ボートにおいて、支持部材を
断面直線形状の実質的に平坦な板で構成し、比較的幅の
広いスリットを数多く板幅の約２／３以上にわたって切
り込んで形成し、支持部材の全体をほぼ櫛形にして、し
かもスリットによって画成された支持アームの先端部分
に支持突起を設けて、支持突起がウエハの外周縁部を超
えてウエハの中央寄りの部分を支持する構成にしたこと
を特徴とする縦型ボートを要旨としている。SUMMARY OF THE INVENTION According to the present invention, a plurality of supporting members are arranged in a vertical direction, and a plurality of semiconductor wafers are loaded in a plurality of slits formed at predetermined intervals on the supporting members. In a vertical boat, the support member is composed of a substantially flat plate having a linear cross-section, and a large number of relatively wide slits are formed by cutting over about ⅔ or more of the plate width, and the entire support member is formed. In addition, the support arm has a comb shape and is provided with a support protrusion at a tip portion of the support arm defined by a slit, and the support protrusion supports a portion near the center of the wafer beyond the outer peripheral edge portion of the wafer. The main point is a vertical boat.
【００１４】[0014]
【発明の効果】この発明の縦型ボートによれば、ウエハ
の撓み、反り、スリップ発生を低減する効果がある。と
くにスリップ発生の抑制効果は非常に大きい。この発明
の縦型ボートを使用すれば、製品の歩留まり及び信頼性
の向上と、熱処理工程の時間短縮が実現できる。According to the vertical boat of the present invention, it is possible to reduce the occurrence of wafer bending, warpage and slippage. In particular, the effect of suppressing the occurrence of slip is very large. By using the vertical boat of the present invention, it is possible to improve the yield and reliability of products and shorten the time of the heat treatment process.
【００１５】さらに詳細に述べると、支持突起がウエハ
の外周縁部を超えてウエハの中央寄りの部分を支持する
ので、熱処理時に被熱処理物であるウエハの外周縁部に
支持部材の支持部分が接触しない。その結果、ウエハ外
周縁部を支持する従来の縦型ボートにみられた欠点が解
消される。例えば、半導体ウエハをボートの所定位置に
積載した状態で、ウエハの重心がウエハの挿入始端側に
位置する対向する２つの支持部材の支持部分間から相当
に奥に入ったところに位置するので、ウエハの挿入始端
側に位置する支持部材への荷重負担が軽減される。換言
すれば、全ての支持部材に荷重が適当に分散されるので
ある。それゆえウエハがスリップを起こす危険が確実に
回避される。More specifically, since the supporting projections support the portion of the wafer near the center of the wafer beyond the outer peripheral edge portion of the wafer, the supporting portion of the support member is provided on the outer peripheral edge portion of the wafer to be heat-treated during the heat treatment. Do not touch. As a result, the drawbacks found in the conventional vertical boat supporting the outer peripheral edge of the wafer are eliminated. For example, when the semiconductor wafers are loaded in a predetermined position of the boat, the center of gravity of the wafers is located considerably inward from the supporting portions of the two opposing supporting members located on the wafer insertion start side. The load on the support member located on the wafer insertion start side is reduced. In other words, the load is properly distributed on all the support members. Therefore, the risk of the wafer slipping is reliably avoided.
【００１６】また、この発明の縦型ボートによれば、支
持突起がウエハの外周縁部を超えてウエハの中央寄りの
部分を支持するので、ウエハの外周縁部を支持する従来
例に比較して、ウエハの重量による撓み量を抑制する。
この効果は特にウエハが大きな寸法のものになるにつれ
て顕著になる。その結果、ウエハが変形したりスリップ
したりして結晶転移が発生することが防止でき、製品歩
留まりが向上する。Further, according to the vertical boat of the present invention, since the supporting projections support the portion of the wafer near the center of the wafer beyond the outer peripheral edge portion of the wafer, it is compared with the conventional example in which the outer peripheral edge portion of the wafer is supported. Thus, the amount of bending due to the weight of the wafer is suppressed.
This effect becomes remarkable especially as the size of the wafer increases. As a result, it is possible to prevent the wafer from being deformed or slipped to cause crystal transition, and the product yield is improved.
【００１７】さらに、支持突起がウエハの外周縁部を超
えてウエハの中央寄りの部分を支持するので、棒形状の
支持部材に形成された複数の溝のところからのウエハへ
の伝熱がなくなり、局部的なウエハ内部の温度分布が極
力押えられ、熱処理時にボートの支持部材の支持部分と
ウエハの外周部分との温度差による熱応力の発生が効果
的に抑制される。したがって、ウエハ自重及び熱的温度
分布による熱応力が原因となるウエハのスリップ転移が
なくなり、ウエハの熱処理歩留まりが向上する。Further, since the supporting projections support the portion of the wafer closer to the center beyond the outer peripheral edge portion of the wafer, heat transfer to the wafer from the plurality of grooves formed in the rod-shaped supporting member is eliminated. The local temperature distribution inside the wafer is suppressed as much as possible, and the generation of thermal stress due to the temperature difference between the supporting portion of the boat supporting member and the outer peripheral portion of the wafer during the heat treatment is effectively suppressed. Therefore, the slip transition of the wafer caused by the thermal stress due to the weight of the wafer and the thermal temperature distribution is eliminated, and the heat treatment yield of the wafer is improved.
【００１８】この発明の製造方法によれば、前述のよう
に顕著な効果を奏する縦型ボートを極めて容易にかつ高
い精度で作ることができる。特に高精度のスリット幅及
びスリット間隔を有する縦型ボートを多量生産するとき
に、この発明の製造方法は抜群の効果を発揮する。According to the manufacturing method of the present invention, it is possible to extremely easily and highly accurately manufacture the vertical boat that exhibits the remarkable effects as described above. In particular, when a large number of vertical boats having highly accurate slit widths and slit intervals are produced, the manufacturing method of the present invention exerts an outstanding effect.
【００１９】[0019]
【実施例】図１〜２はこの発明の好適な実施例による縦
型ボートを示している。縦型ボートは、多数のウエハ１
を積載するものであり、上下一対の板状固定手段２の間
に３本以上（代表的には４本）の支持部材５、６が縦方
向に配列されている。それらの支持部材５、６に所定の
間隔で縦方向に沿って形成された複数のスリット９、１
０にウエハ１を積載するようになっている。支持部材
５、６は、いずれも断面直線形状の実質的に平坦な板で
構成している。1 and 2 show a vertical boat according to a preferred embodiment of the present invention. The vertical boat has many wafers 1
3 or more (typically 4) supporting members 5 and 6 are vertically arranged between a pair of upper and lower plate-shaped fixing means 2. A plurality of slits 9 and 1 formed in the supporting members 5 and 6 at predetermined intervals along the vertical direction.
The wafer 1 is loaded on 0. Each of the support members 5 and 6 is formed of a substantially flat plate having a linear cross section.
【００２０】スリット９、１０が板状支持部材５、６の
板幅（つまり板の横方向の長さ）の約２／３以上（好ま
しくは３／４以上）にわたって切り込んで形成してあ
る。その結果、スリット９、１０によって画成された支
持部分がアーム部分を構成して在る。そのアーム部分の
先端部に狭い面積の支持突起１３、１４が設けてある。
アーム部分がウエハ１の外周縁部を超えて延びて、支持
突起１３、１４がウエハ１の中央寄りの部分を支持する
ようになっている。例えば、これらの支持突起１３、１
４によるウエハ１の支持ポイントが、ウエハ１の半径の
５０〜９０パーセントに来てウエハ１の外周縁部を超え
てウエハ１の中央寄りの部分を支持するように配置する
のが好ましい。しかも、支持ポイントがウエハ１の中心
１ａから同心円状に配置されのが好ましい。The slits 9 and 10 are formed by cutting the plate-shaped support members 5 and 6 over about 2/3 or more (preferably 3/4 or more) of the plate width (that is, the lateral length of the plate). As a result, the supporting portion defined by the slits 9 and 10 constitutes the arm portion. Supporting protrusions 13 and 14 having a small area are provided at the tip of the arm portion.
The arm portion extends beyond the outer peripheral edge portion of the wafer 1, and the support protrusions 13 and 14 support the portion of the wafer 1 near the center. For example, these support protrusions 13, 1
It is preferable that the supporting point of the wafer 1 according to 4 reaches 50 to 90% of the radius of the wafer 1 and supports the portion of the wafer 1 near the center of the wafer 1 beyond the outer peripheral edge portion. Moreover, it is preferable that the support points are arranged concentrically from the center 1a of the wafer 1.
【００２１】板状支持部材は、図示しなかった形状を含
めて、いろいろと組み合わせて使用できる。The plate-like support member can be used in various combinations, including shapes not shown.
【００２２】支持突起を設けることにより、ウエハ外周
縁部との接触を避け、ウエハ外周縁部での応力集中及び
ボートからの熱伝導を避けることができる。By providing the supporting protrusions, it is possible to avoid contact with the outer peripheral edge of the wafer and avoid stress concentration in the outer peripheral edge of the wafer and heat conduction from the boat.
【００２３】支持突起の高さはウエハの外周縁部が触れ
ない程度で良いが、ガス置換を考えると、１〜５ｍｍ程
の高さの方が望ましい。更に図に示すように比較的幅の
広いスリットを設けることにより、ボートからウエハへ
の熱伝導と、ウエハ及びアーム部分間のガス滞留を防ぐ
ことができる。The height of the support projections may be such that the outer peripheral edge of the wafer does not touch, but considering gas replacement, a height of about 1 to 5 mm is desirable. Further, by providing a relatively wide slit as shown in the figure, heat conduction from the boat to the wafer and gas retention between the wafer and the arm portion can be prevented.
【００２４】ボートの材質は、石英ガラス、炭化珪素、
炭素、単結晶、多結晶シリコン、シリコン含浸炭化珪素
等が挙げられる。また、ボートは、純度、耐熱性、耐腐
食性の高いものが望ましい。石英ガラスの場合、溶接が
容易であるが、他の材質の場合は組立式も考えられる。The material of the boat is quartz glass, silicon carbide,
Examples thereof include carbon, single crystal, polycrystalline silicon, silicon-impregnated silicon carbide and the like. Further, it is desirable that the boat has high purity, high heat resistance, and high corrosion resistance. In the case of quartz glass, welding is easy, but in the case of other materials, an assembly type is also conceivable.
【００２５】また、図示した実施例では４本の支持部材
が使用されているが、本発明はこれに限定されない。Further, although four supporting members are used in the illustrated embodiment, the present invention is not limited to this.
【００２６】さらに、本発明の実施例を詳細に説明する
と、２対の同一の断面直線状の支持部材５、６が縦方向
に互いに平行に配置されている。これらの支持部材５、
６の上方端部と下方端部にはそれぞれ固定手段２が設け
られているが、一方の固定手段２だけを示し、他方の固
定手段は図示を省略している。Further, the embodiment of the present invention will be described in detail. Two pairs of identical support members 5 and 6 having the same linear cross section are arranged in parallel in the longitudinal direction. These support members 5,
Although fixing means 2 are provided at the upper end and the lower end of 6, respectively, only one fixing means 2 is shown, and the other fixing means is not shown.
【００２７】長さと厚みの異なる２種類の断面ほぼ直線
状の板状支持部材５、６が使用されている。ウエハ１の
挿入始端側に位置する２つの対向する支持部材５は、薄
くて長い断面ほぼ直線状の板状支持部材であり、多数の
スリット９を所定の間隔（図２）ごとに板状支持部材５
の幅の約４／５まで切り込んで多数の互いに平行なアー
ム部分を形成してあり、全体が櫛形になっている。他
方、ウエハ１の挿入後端側に位置する２つの対向する支
持部材６は、厚くて短い断面ほぼ直線状の板状支持部材
であり、多数のスリット１０を前述の支持部材５と同一
の間隔ごとに板状支持部材６の幅の約３／４まで切り込
んで多数の互いに平行なアーム部分を形成してあり、全
体が櫛形になっている。Two types of plate-shaped supporting members 5 and 6 having a substantially linear cross section are used, which have different lengths and thicknesses. The two opposing support members 5 located on the insertion start end side of the wafer 1 are thin and long plate-shaped support members having a substantially linear cross-section, and support a large number of slits 9 at predetermined intervals (FIG. 2) in a plate-like shape. Member 5
Is cut to about 4/5 of its width to form a large number of parallel arm portions, and the whole is comb-shaped. On the other hand, the two opposing support members 6 located on the rear end side of the wafer 1 are thick and short plate-shaped support members having a substantially linear cross section, and a large number of slits 10 are formed at the same intervals as the support member 5 described above. Each of them is cut to about 3/4 of the width of the plate-like support member 6 to form a large number of parallel arm portions, and the whole is comb-shaped.
【００２８】ウエハ１の挿入始端側に位置する２つの対
向する支持部材５は、スリット９の底９ａがウエハ１の
挿入方向Ｘと平行になるように形成してある。ウエハ１
の挿入後端側に位置する２つの支持部材６は、スリット
１０の底１０ａがウエハ１の外周円の接線と平行になる
ように形成してある。The two opposing support members 5 located on the insertion start end side of the wafer 1 are formed so that the bottom 9a of the slit 9 is parallel to the insertion direction X of the wafer 1. Wafer 1
The two supporting members 6 located on the rear end side of the insertion are formed so that the bottom 10a of the slit 10 is parallel to the tangent line of the outer peripheral circle of the wafer 1.
【００２９】これらのスリット９、１０によって画成さ
れたアーム部分の先端部に狭い面積（例えば１２ｍ
ｍ2 ）の支持突起１３、１４が設けて在る。アーム部分
はウエハ１の外周縁部を超え、支持突起１３、１４はウ
エハ１の中央寄りの部分Ｐを支持するようになってい
る。A narrow area (for example, 12 m) is formed at the tip of the arm portion defined by these slits 9 and 10.
m 2 ) supporting projections 13, 14 are provided. The arm portion exceeds the outer peripheral edge portion of the wafer 1, and the support protrusions 13 and 14 support the portion P of the wafer 1 near the center.
【００３０】図２に示すように、これらのスリット９、
１０は、それぞれ幅の比較的広い第１スリット９ａと、
幅の比較的狭い第２スリット９ｂとからなる。As shown in FIG. 2, these slits 9,
10 is a first slit 9a having a relatively wide width,
The second slit 9b has a relatively narrow width.
【００３１】好ましくは、ウエハ１をボートの所定位置
に積載した状態で、前述の支持突起１３、１４によるウ
エハ１の支持ポイントは、すべてウエハ１の中心１ａか
ら同心円状に配置され、その同心円はウエハ１の半径の
５０〜９０パーセント（好ましくは５０〜９０パーセン
ト）の領域Ｐに来るようにし、ウエハ１の支持ポイント
が全てウエハ１の外周縁部を超えるように配置する。Preferably, all the supporting points of the wafer 1 by the above-mentioned supporting protrusions 13 and 14 are arranged concentrically from the center 1a of the wafer 1 in a state where the wafer 1 is loaded at a predetermined position on the boat. The wafer P is arranged so as to come to a region P of 50 to 90 percent (preferably 50 to 90 percent) of the radius of the wafer 1 so that all the supporting points of the wafer 1 exceed the outer peripheral edge portion of the wafer 1.
【００３２】また、これらの支持突起１３、１４による
ウエハ１の支持ポイントの好ましい配置方法あるいは分
配方法を述べると、ウエハ１の挿入始端側に位置する支
持部材６の突起１４と、ウエハ１の中心１ａと、ウエハ
１の挿入方向Ｘとのなす角度Ａが約９５〜１４０度（好
ましくは１２０度）になるように配置する。他方、ウエ
ハ１の挿入後端側に位置する２つの対向する支持部材５
の突起１３と、ウエハ１の中心１ａと、ウエハ１の挿入
方向Ｘとのなす角度Ｂが約３０〜８０度（好ましくは６
０度）になるように配置する。A preferred method of arranging or distributing the support points of the wafer 1 by the support projections 13 and 14 will be described. The projection 14 of the support member 6 located on the insertion start side of the wafer 1 and the center of the wafer 1. 1a and the insertion direction X of the wafer 1 form an angle A of about 95 to 140 degrees (preferably 120 degrees). On the other hand, two opposing support members 5 located on the rear end side of the wafer 1 for insertion
The angle B formed by the projection 13 of the wafer 1, the center 1a of the wafer 1 and the insertion direction X of the wafer 1 is about 30 to 80 degrees (preferably 6 degrees).
0 degree).
【００３３】これとは違った支持ポイントの配置方法あ
るいは分配方法の考え方を採用して、ウエハ１をボート
の所定位置に積載した状態で、ウエハ１の挿入始端側に
位置する２本の支持部材５の突起１３と、他方の、ウエ
ハ１の挿入後端側に位置する２つの対向する２本の支持
部材６の突起１４とが、ウエハ１の中心１ａを通りかつ
ウエハ１の挿入方向Ｘと平行な線Ｍに対して線対称にな
っていると共に、ウエハ１の中心１ａを通りかつウエハ
１の挿入方向Ｘと直角方向の線Ｎに対しても線対称にな
っていると、すべての支持ポイントに等しい荷重がかか
り、４本の突起の荷重バランスが良好になる。By adopting a different idea of the method of arranging the support points or the method of distributing the support points, two support members located on the insertion start end side of the wafer 1 in a state where the wafer 1 is loaded at a predetermined position of the boat. The protrusion 13 of No. 5 and the other protrusion 14 of the two opposing support members 6 located on the insertion rear end side of the wafer 1 pass through the center 1 a of the wafer 1 and the insertion direction X of the wafer 1. If it is axisymmetric with respect to a parallel line M and is also axisymmetric with respect to a line N passing through the center 1a of the wafer 1 and perpendicular to the insertion direction X of the wafer 1, all supports A load equal to the point is applied, and the load balance of the four protrusions becomes good.
【００３４】支持部材５、６の製造方法の一例を説明す
ると、まず図１に示すような断面形状と所望の長さを有
する板状支持部材を形成する。続いて、このような断面
形状の板状支持部材５、６に所定の間隔（例えば３ｍ
ｍ）毎に所定の幅（例えば２９×５．３５ｍｍ）を有す
る第１スリット９ａをウォータージェット等の手段を使
って開ける。そのとき、板状支持部材５、６の両方の側
端面５ａ、５ｂに残部を残す。一方の側端面５ａ側の残
部にその側端面５ａから第１スリット９ａまで所定の幅
（例えば３ｍｍ）の第２スリット９ｂをダイヤモンドカ
ッターで切り込むことにより、図２に示すように、支持
部材の全体を櫛形状にして、主として第１スリット９ａ
によって形成されたアーム部分の先端部に狭い面積のウ
エハ用の支持突起１３、１４を形成する。支持突起１
３、１４の高さは、例えば１ｍｍである。他方の側端５
ｂの残部は支柱として機能する。An example of a method of manufacturing the supporting members 5 and 6 will be described. First, a plate-shaped supporting member having a cross-sectional shape and a desired length as shown in FIG. 1 is formed. Then, the plate-shaped support members 5 and 6 having such a cross-sectional shape are spaced at a predetermined interval (for example, 3 m).
The first slit 9a having a predetermined width (for example, 29 × 5.35 mm) for each m) is opened using a means such as a water jet. At that time, the remaining portions are left on both side end surfaces 5a, 5b of the plate-shaped support members 5, 6. By cutting a second slit 9b having a predetermined width (for example, 3 mm) from the side end surface 5a to the first slit 9a in the remaining portion on the side of the one side end surface 5a with a diamond cutter, as shown in FIG. Is formed into a comb shape, and mainly the first slit 9a
Wafer supporting protrusions 13 and 14 having a small area are formed at the tip of the arm portion formed by. Support protrusion 1
The height of 3, 14 is, for example, 1 mm. The other side edge 5
The rest of b functions as a pillar.
【００３５】なお、支持部材５、６の製造方法におい
て、第１スリットを形成した後、全ての支持部材を固定
手段に固定し、その後で、第２スリットを形成すると、
スリット全体の精度が向上する。また、第１スリットを
形成した後、Ｓｉを含浸して、そのあとに、第２スリッ
トを形成すると、加工が容易となる。In the method of manufacturing the supporting members 5 and 6, after forming the first slits, all supporting members are fixed to the fixing means, and then the second slits are formed.
The accuracy of the entire slit is improved. Further, when the first slit is formed, Si is impregnated, and then the second slit is formed, processing becomes easy.
【００３６】本発明のボートは従来のボートと比較して
ウエハのたわみ、そりおよびスリップ発生の低減に効果
が認められた。特にスリップ発生の抑制効果は大きく、
突起を有することによってボート支柱との接触を避けた
ことが大きな要因となっている。The boat of the present invention was found to be effective in reducing the occurrence of wafer deflection, warpage and slip as compared with the conventional boat. In particular, the effect of suppressing slippage is great,
A major factor is that the protrusions prevent contact with the boat support.
【図１】この発明の好適な実施例による縦型ボートの概
略を示す断面図。FIG. 1 is a sectional view schematically showing a vertical boat according to a preferred embodiment of the present invention.
【図２】図１の縦型ボートの一方の支持部材を示すＩＸ
ーＩＸ線に沿った断面図。2 is an IX showing one supporting member of the vertical boat of FIG.
-A sectional view taken along line IX.
１ ウエハ １ａ ウエハの中心 ５、６ 支持部材 ９、１０ スリット ９ａ、１０ａ 第１スリット ９ｂ、１０ｂ 第２スリット １３、１４ 支持突起 ◆ 1 Wafer 1a Wafer center 5 and 6 Support member 9 and 10 Slit 9a and 10a 1st slit 9b and 10b 2nd slit 13 and 14 Support protrusion ◆
─────────────────────────────────────────────────────
─────────────────────────────────────────────────── ───
【手続補正書】[Procedure amendment]
【提出日】平成４年１１月３０日[Submission date] November 30, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】全文[Correction target item name] Full text
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【書類名】 明細書[Document name] Statement
【発明の名称】 縦型ボートTitle of the invention Vertical boat
【特許請求の範囲】[Claims]
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【産業上の利用分野】この発明は、複数の支持部材を縦
方向に配列して、それらの支持部材に所定の間隔で形成
された複数のスリットにそれぞれ複数の半導体ウエハを
積載するための縦型ボートに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical arrangement for arranging a plurality of supporting members in a vertical direction and loading a plurality of semiconductor wafers on a plurality of slits formed at predetermined intervals on the supporting members. Regarding type boats.
【０００２】[0002]
【従来の技術】半導体ウエハの酸化・拡散処理工程で
は、多数の半導体ウエハをウエハ用ボートに積載して、
そのままウエハ用ボートを拡散炉内部に搬入して、そこ
で所望の熱処理を行う。2. Description of the Related Art In a semiconductor wafer oxidation / diffusion process, a large number of semiconductor wafers are loaded on a wafer boat,
The wafer boat is carried into the diffusion furnace as it is, and a desired heat treatment is performed therein.
【０００３】拡散炉の種類に応じて縦型ボートを使用し
たり、横型ボートを使用したりしている。A vertical boat or a horizontal boat is used depending on the type of diffusion furnace.
【０００４】従来の縦型ボートは、複数のウエハを水平
又はそれよりも少し傾斜した状態に支持するために複数
（例えば４本）の棒形状の支持部材が縦方向に配列され
ている。それらの支持部材には所定の間隔で複数のスリ
ットが形成されている。それらの複数のスリットにそれ
ぞれ複数の半導体ウエハを積載する。In a conventional vertical boat, a plurality of (for example, four) rod-shaped support members are vertically arranged to support a plurality of wafers horizontally or in a state in which they are slightly inclined. A plurality of slits are formed at predetermined intervals on those support members. A plurality of semiconductor wafers are loaded in the plurality of slits.
【０００５】従来の縦型ボートは、通常、全ての支持部
材が同一断面形状の棒材であった。例えば、断面形状は
円形や四角形などであった。このような断面形状の棒材
に形成されたスリットは、その奥底がウエハの外周に沿
ったアーク形状となっていた。換言すれば、スリットに
よって形成された支持面のウエハ円周方向の幅が小さか
った。In the conventional vertical boat, all the supporting members are usually rods having the same sectional shape. For example, the cross-sectional shape was circular or square. The slit formed on the bar having such a cross-sectional shape had an arc shape whose inner bottom was along the outer circumference of the wafer. In other words, the width of the supporting surface formed by the slit in the wafer circumferential direction was small.
【０００６】一方、大型のウエハの荷重応力を緩和させ
る手段として実開昭６２−１２８６３３号のように円弧
状板を支持棒に固定した形状が提案されているが、面精
度を出すのが困難で高価となる。On the other hand, as a means for relieving the load stress of a large-sized wafer, a shape in which an arc-shaped plate is fixed to a support rod is proposed as in Japanese Utility Model Laid-Open No. 62-128633, but it is difficult to obtain surface accuracy. It will be expensive.
【０００７】[0007]
【発明が解決しようとする課題】ボートは、支持部材が
棒形状であっても板形状であっても支持部材によってウ
エハを支持した状態で熱処理時に高温にさらされる。す
ると、従来の縦型ボートは、ウエハ外周縁部を支持する
ものであるため、特にウエハが大きな寸法のものになる
につれて、ウエハはその重量で撓み量が増大する。その
結果、ウエハが変形したりスリップしたりして、いわゆ
る結晶転移が発生し、製品歩留に悪い影響を及ぼす。The boat is exposed to a high temperature during heat treatment while the wafer is supported by the supporting member regardless of whether the supporting member is rod-shaped or plate-shaped. Then, since the conventional vertical boat supports the outer peripheral edge of the wafer, the amount of bending of the wafer increases due to its weight, especially as the size of the wafer increases. As a result, the wafer is deformed or slips, so-called crystal transition occurs, which adversely affects the product yield.
【０００８】さらに、支持部材の支持面がウエハの外周
縁部のみと接触していると、特定の支持部材に荷重応力
が集中する。そのため、特にウエハが大きな寸法のもの
になるにつれて、スリップの発生頻度が増加する。Further, when the supporting surface of the supporting member is in contact with only the outer peripheral edge of the wafer, the load stress concentrates on the specific supporting member. Therefore, the frequency of slips increases, especially as the size of the wafer increases.
【０００９】ウエハをボートに出し入れするために、ウ
エハの挿入始端側に位置する１対の支持部材の間隔をウ
エハの外径よりも大きくしていた。そのため、ウエハを
ボートの所定位置に積載した状態で、ウエハの挿入始端
側に位置する支持部材の前方端と、ウエハの中心と、ウ
エハの挿入方向とのなす角度が９０度を僅かに（例えば
数度）越す構造にするのがせいぜいであるが、その様な
ものであると、ウエハの重心がウエハの挿入始端側に位
置する対向する２つの支持部材の前方端間又はその近傍
に位置することになり、ウエハの挿入始端側に位置する
支持部材に荷重負担が偏ってしまう。例えば、ウエハの
挿入始端側に位置する１対の支持部材に７０〜９０％の
荷重応力が負荷される。In order to load and unload the wafer into and from the boat, the distance between the pair of support members located on the wafer insertion start side is made larger than the outer diameter of the wafer. Therefore, in a state where the wafers are loaded on the predetermined position of the boat, the angle formed between the front end of the support member located on the wafer insertion start side, the center of the wafer, and the wafer insertion direction is slightly smaller than 90 degrees (for example, It is best to use a structure that is several degrees apart, but in such a structure, the center of gravity of the wafer is located between the front ends of two opposing support members located on the wafer insertion start side or in the vicinity thereof. As a result, the load is unevenly distributed on the support member located on the insertion start end side of the wafer. For example, a load stress of 70 to 90% is applied to the pair of support members located on the insertion start end side of the wafer.
【００１０】また、熱処理時にボートの支持部材の支持
部分とウエハとの温度差による熱応力も複合的に加わっ
て、特にウエハが大きな寸法のものになるにつれて、ス
リップの発生頻度が増加する。Further, the thermal stress due to the temperature difference between the supporting portion of the supporting member of the boat and the wafer is also added during the heat treatment, and the frequency of slips increases especially as the wafer becomes larger.
【００１１】ウエハを熱処理するに際しては、拡散炉か
らの熱の伝達は輻射あるいは伝熱によるが、棒形状の支
持部材に所定の間隔で形成された複数のスリット（溝）
のところからのウエハへの伝熱もあり、局部的なウエハ
内部の温度分布の要因となっている。ウエハ自重及び熱
的温度分布による熱応力が、ウエハの挿入始端側に位置
する対向する１対の支持部材でのウエハのスリップ転移
の原因となり、ウエハの熱処理歩留を低下させていた。When heat-treating a wafer, heat is transferred from the diffusion furnace by radiation or heat transfer, but a plurality of slits (grooves) are formed in the rod-shaped support member at predetermined intervals.
There is also heat transfer from that location to the wafer, which is a factor of the local temperature distribution inside the wafer. The thermal stress due to the weight of the wafer and the thermal temperature distribution causes the slip transition of the wafer between the pair of opposing support members located on the insertion start end side of the wafer, thus lowering the heat treatment yield of the wafer.
【００１２】この発明は、このような従来技術の欠点を
解消して、大きな寸法のウエハを積載して熱処理をして
もスリップが生じないとともに、ウエハの撓み量を小さ
くできる縦型ボートを提供することを目的としている。The present invention solves the above-mentioned drawbacks of the prior art, and provides a vertical boat in which a large size wafer is loaded and heat treatment is not performed, and slippage does not occur, and the amount of wafer deflection can be reduced. The purpose is to do.
【００１３】[0013]
【課題を解決するための手段】本願発明は複数の支持部
材を縦方向に配列して、それらの支持部材に所定の間隔
で形成された複数のスリットにそれぞれ複数の半導体ウ
エハを積載するための縦型ボートにおいて、支持部材を
断面直線形状の実質的に平坦な板で構成し、比較的幅の
広いスリットを数多く板幅の約２／３以上にわたって切
り込んで形成し、支持部材の全体をほぼ櫛形にして、し
かもスリットによって画成された支持アームの先端部分
に支持突起を設けて、支持突起がウエハの外周縁部を超
えてウエハの中央寄りの部分を支持する構成にしたこと
を特徴とする縦型ボートを要旨としている。SUMMARY OF THE INVENTION According to the present invention, a plurality of supporting members are arranged in a vertical direction, and a plurality of semiconductor wafers are loaded in a plurality of slits formed at predetermined intervals on the supporting members. In a vertical boat, the support member is composed of a substantially flat plate having a linear cross-section, and a large number of relatively wide slits are formed by cutting over about ⅔ or more of the plate width, and the entire support member is formed. In addition, the support arm has a comb shape and is provided with a support protrusion at a tip portion of the support arm defined by a slit, and the support protrusion supports a portion near the center of the wafer beyond the outer peripheral edge portion of the wafer. The main point is a vertical boat.
【００１４】[0014]
【発明の効果】この発明の縦型ボートによれば、ウエハ
の撓み、反り、スリップ発生を低減する効果がある。と
くにスリップ発生の抑制効果は非常に大きい。この発明
の縦型ボートを使用すれば、製品の歩留まり及び信頼性
の向上と、熱処理工程の時間短縮が実現できる。According to the vertical boat of the present invention, it is possible to reduce the occurrence of wafer bending, warpage and slippage. In particular, the effect of suppressing the occurrence of slip is very large. By using the vertical boat of the present invention, it is possible to improve the yield and reliability of products and shorten the time of the heat treatment process.
【００１５】さらに詳細に述べると、支持突起がウエハ
の外周縁部を超えてウエハの中央寄りの部分を支持する
ので、熱処理時に被熱処理物であるウエハの外周縁部に
支持部材の支持部分が接触しない。その結果、ウエハ外
周縁部を支持する従来の縦型ボートにみられた欠点が解
消される。例えば、半導体ウエハをボートの所定位置に
積載した状態で、ウエハの重心がウエハの挿入始端側に
位置する対向する２つの支持部材の支持部分間から相当
に挿入側に位置するので、ウエハの挿入始端側に位置す
る支持部材への荷重負担が軽減される。換言すれば、全
ての支持部材に荷重が適当に分散されるのである。それ
ゆえウエハがスリップを起こす危険が回避される。More specifically, since the supporting projections support the portion of the wafer near the center of the wafer beyond the outer peripheral edge portion of the wafer, the supporting portion of the support member is provided on the outer peripheral edge portion of the wafer to be heat-treated during the heat treatment. Do not touch. As a result, the drawbacks found in the conventional vertical boat supporting the outer peripheral edge of the wafer are eliminated. For example, when a semiconductor wafer is loaded on a predetermined position of a boat, the center of gravity of the wafer is located considerably on the insertion side from the supporting portions of the two opposing supporting members located on the insertion start end side of the wafer. The load on the supporting member located on the starting end side is reduced. In other words, the load is properly distributed on all the support members. Therefore, the risk of the wafer slipping is avoided.
【００１６】また、この発明の縦型ボートによれば、支
持突起がウエハの外周縁部を超えてウエハの中央寄りの
部分を支持するので、ウエハの外周縁部を支持する従来
例に比較して、ウエハの重量による撓み量を抑制する。
この効果は特にウエハが大きな寸法のものになるにつれ
て顕著になる。その結果、ウエハが変形したりスリップ
したりして結晶転移が発生することが防止でき、製品歩
留まりが向上する。Further, according to the vertical boat of the present invention, since the supporting projections support the portion of the wafer near the center of the wafer beyond the outer peripheral edge portion of the wafer, it is compared with the conventional example in which the outer peripheral edge portion of the wafer is supported. Thus, the amount of bending due to the weight of the wafer is suppressed.
This effect becomes remarkable especially as the size of the wafer increases. As a result, it is possible to prevent the wafer from being deformed or slipped to cause crystal transition, and the product yield is improved.
【００１７】さらに、支持突起がウエハの外周縁部を超
えてウエハの中央寄りの部分を支持するので、棒形状の
支持部材に形成された複数の溝のところからのウエハへ
の伝熱がなくなり、局部的なウエハ内部の温度分布が極
力押えられ、熱処理時にボートの支持部材の支持部分と
ウエハの外周部分との温度差による熱応力の発生が効果
的に抑制される。したがって、ウエハ自重及び熱的温度
分布による熱応力が原因となるウエハのスリップ転移が
なくなり、ウエハの熱処理歩留まりが向上する。Further, since the supporting projections support the portion of the wafer closer to the center beyond the outer peripheral edge portion of the wafer, heat transfer to the wafer from the plurality of grooves formed in the rod-shaped supporting member is eliminated. The local temperature distribution inside the wafer is suppressed as much as possible, and the generation of thermal stress due to the temperature difference between the supporting portion of the boat supporting member and the outer peripheral portion of the wafer during the heat treatment is effectively suppressed. Therefore, the slip transition of the wafer caused by the thermal stress due to the weight of the wafer and the thermal temperature distribution is eliminated, and the heat treatment yield of the wafer is improved.
【００１８】この発明の製造方法によれば、前述のよう
に顕著な効果を奏する縦型ボートを極めて容易にかつ高
い精度で作ることができる。特に高精度のスリット幅及
びスリット間隔を有する縦型ボートを多量生産するとき
に、この発明の製造方法は抜群の効果を発揮する。According to the manufacturing method of the present invention, it is possible to extremely easily and highly accurately manufacture the vertical boat that exhibits the remarkable effects as described above. In particular, when a large number of vertical boats having highly accurate slit widths and slit intervals are produced, the manufacturing method of the present invention exerts an outstanding effect.
【００１９】[0019]
【実施例】図１〜２はこの発明の好適な実施例による縦
型ボートを示している。縦型ボートは、多数のウエハ１
を積載するものであり、上下一対の板伏固定手段２の間
に３本以上（代表的には４本）の支持部材５、６が縦方
向に配列されている。それらの支持部材５、６に所定の
間隔で縦方向に沿って形成された複数のスリット９、１
０にウエハ１を積載するようになっている。支持部材
５、６は、いずれも断面直線形状の実質的に平坦な板で
構成している。1 and 2 show a vertical boat according to a preferred embodiment of the present invention. The vertical boat has many wafers 1
3 or more (typically 4) supporting members 5 and 6 are vertically arranged between a pair of upper and lower plate fixing means 2. A plurality of slits 9 and 1 formed in the supporting members 5 and 6 at predetermined intervals along the vertical direction.
The wafer 1 is loaded on 0. Each of the support members 5 and 6 is formed of a substantially flat plate having a linear cross section.
【００２０】スリット９、１０が板状支持部材５、６の
板幅（つまり板の横方向の長さ）の約２／３以上（好ま
しくは３／４以上）にわたって切り込んで形成してあ
る。その結果、スリット９、１０によって画成された支
持部分がアーム部分を構成して在る。そのアーム部分の
先端部に狭い面積の支持突起１３、１４が設けてある。
アーム部分がウエハ１の外周縁部を超えて延びて、支持
突起１３、１４がウエハ１の中央寄りの部分を支持する
ようになっている。例えば、これらの支持突起１３、１
４によるウエハ１の支持ポイントが、ウエハ１の半径の
５０〜９０％に来てウエハ１の外周縁部を超えてウエハ
１の中央寄りの部分を支持するように配置するのが好ま
しい。しかも、支持ポイントがウエハ１の中心１ａから
同心円状に配置されのが好ましい。The slits 9 and 10 are formed by cutting the plate-shaped support members 5 and 6 over about 2/3 or more (preferably 3/4 or more) of the plate width (that is, the lateral length of the plate). As a result, the supporting portion defined by the slits 9 and 10 constitutes the arm portion. Supporting protrusions 13 and 14 having a small area are provided at the tip of the arm portion.
The arm portion extends beyond the outer peripheral edge portion of the wafer 1, and the support protrusions 13 and 14 support the portion of the wafer 1 near the center. For example, these support protrusions 13, 1
It is preferable that the support point of the wafer 1 according to 4 reaches 50 to 90% of the radius of the wafer 1 and supports the portion of the wafer 1 near the center beyond the outer peripheral edge portion of the wafer 1. Moreover, it is preferable that the support points are arranged concentrically from the center 1a of the wafer 1.
【００２１】板状支持部材は、図示しなかった形状を含
めて、いろいろと組み合わせて使用できる。The plate-like support member can be used in various combinations, including shapes not shown.
【００２２】支持突起を設けることにより、ウエハ外周
縁部での支持接触を避け、ウエハ外周縁部での応力集中
及びボートからの熱伝導を避けることができる。By providing the supporting protrusions, it is possible to avoid supporting contact at the outer peripheral edge of the wafer, and avoid stress concentration at the outer peripheral edge of the wafer and heat conduction from the boat.
【００２３】支持突起の高さはウエハの外周縁部が触れ
ない程度で良いが、ガス置換を考えると、０．３〜３ｍ
ｍ程の高さの方が望ましい。更に図に示すように比較的
幅の広いスリットを設けることにより、ボートからウエ
ハへの熱伝導と、ウエハ及びアーム部分間のガス滞留を
防ぐことができる。The height of the support protrusions may be such that the outer peripheral edge of the wafer does not touch, but considering gas replacement, 0.3-3 m.
A height of about m is desirable. Further, by providing a relatively wide slit as shown in the figure, heat conduction from the boat to the wafer and gas retention between the wafer and the arm portion can be prevented.
【００２４】ボートの材質は、石英ガラス、炭化珪素、
炭素、単結晶、多結晶シリコン、シリコン含浸炭化珪素
等が挙げられる。また、ボートは、純度、耐熱性、耐腐
食性の高いものが望ましい。石英ガラスの場合、溶接が
容易であるが、他の材質の場合は組立式も考えられる。The material of the boat is quartz glass, silicon carbide,
Examples thereof include carbon, single crystal, polycrystalline silicon, silicon-impregnated silicon carbide and the like. Further, it is desirable that the boat has high purity, high heat resistance, and high corrosion resistance. In the case of quartz glass, welding is easy, but in the case of other materials, an assembly type is also conceivable.
【００２５】また、図示した実施例では４本の支持部材
が使用されているが、本発明はこれに限定されない。Further, although four supporting members are used in the illustrated embodiment, the present invention is not limited to this.
【００２６】さらに、本発明の実施例を詳細に説明する
と、２対の同一の断面直線状の支持部材５、６が縦方向
に互いに平行に配置されている。これらの支持部材５、
６の上方端部と下方端部にはそれぞれ固定手段２が設け
られているが、一方の固定手段２だけを示し、他方の固
定手段は図示を省略している。Further, the embodiment of the present invention will be described in detail. Two pairs of identical support members 5 and 6 having the same linear cross section are arranged in parallel in the longitudinal direction. These support members 5,
Although fixing means 2 are provided at the upper end and the lower end of 6, respectively, only one fixing means 2 is shown, and the other fixing means is not shown.
【００２７】長さと厚みの異なる２種類の断面ほぼ直線
状の板状支持部材５、６が使用されている。ウエハ１の
挿入始端側に位置する２つの対向する支持部材５は、薄
くて長い断面ほぼ直線状の板状支持部材であり、多数の
スリット９を所定の間隔（図２）ごとに板状支持部材５
の幅の約４／５まで切り込んで多数の互いに平行なアー
ム部分を形成してあり、全体が櫛形になっている。他
方、ウエハ１の挿入後端側に位置する２つの対向する支
持部材６は、厚くて短い断面ほぼ直線状の板状支持部材
であり、多数のスリット１０を前述の支持部材５と同一
の間隔ごとに板状支持部材６の幅の約３／４まで切り込
んで多数の互いに平行なアーム部分を形成してあり、全
体が櫛形になっている。Two types of plate-shaped supporting members 5 and 6 having a substantially linear cross section are used, which have different lengths and thicknesses. The two opposing support members 5 located on the insertion start end side of the wafer 1 are thin and long plate-shaped support members having a substantially linear cross-section, and support a large number of slits 9 at predetermined intervals (FIG. 2) in a plate-like shape. Member 5
Is cut to about 4/5 of its width to form a large number of parallel arm portions, and the whole is comb-shaped. On the other hand, the two opposing support members 6 located on the rear end side of the wafer 1 are thick and short plate-shaped support members having a substantially linear cross section, and a large number of slits 10 are formed at the same intervals as the support member 5 described above. Each of them is cut to about 3/4 of the width of the plate-like support member 6 to form a large number of parallel arm portions, and the whole is comb-shaped.
【００２８】ウエハ１の挿入始端側に位置する２つの対
向する支持部材５は、スリット９の底９ａがウエハ１の
挿入方向Ｘと平行になるように形成してある。ウエハ１
の挿入後端側に位置する２つの支持部材６は、スリット
１０の底１０ａがウエハ１の外周円の接線と平行になる
ように形成してある。The two opposing support members 5 located on the insertion start end side of the wafer 1 are formed so that the bottom 9a of the slit 9 is parallel to the insertion direction X of the wafer 1. Wafer 1
The two supporting members 6 located on the rear end side of the insertion are formed so that the bottom 10a of the slit 10 is parallel to the tangent line of the outer peripheral circle of the wafer 1.
【００２９】これらのスリット９、１０によって画成さ
れたアーム部分の先端部に狭い面積（例えば１２ｍ
ｍ２）の支持突起１３、１４が設けて在る。アーム部分
はウエハ１の外周縁部を超え、支持突起１３、１４はウ
エハ１の中央寄りの部分Ｐを支持するようになってい
る。A narrow area (for example, 12 m) is formed at the tip of the arm portion defined by these slits 9 and 10.
m 2 ) supporting projections 13, 14 are provided. The arm portion exceeds the outer peripheral edge portion of the wafer 1, and the support protrusions 13 and 14 support the portion P of the wafer 1 near the center.
【００３０】図２に示すように、これらのスリット９、
１０は、それぞれ幅の比較的広い第１スリット９ａと、
幅の比較的狭い第２スリット９ｂとからなる。As shown in FIG. 2, these slits 9,
10 is a first slit 9a having a relatively wide width,
The second slit 9b has a relatively narrow width.
【００３１】好ましくは、ウエハ１をボートの所定位置
に積載した状態で、前述の支持突起１３、１４によるウ
エハ１の支持ポイントは、すべてウエハ１の中心１ａか
ら同心円状に配置され、その同心円はウエハ１の半径の
５０〜９０％（好ましくは５０〜９０％）の領域Ｐに来
るようにし、ウエハ１の支持ポイントが全てウエハ１の
外周縁部を超えるように配置する。Preferably, all the supporting points of the wafer 1 by the above-mentioned supporting protrusions 13 and 14 are arranged concentrically from the center 1a of the wafer 1 in a state where the wafer 1 is loaded at a predetermined position on the boat. It is arranged so as to come to a region P of 50 to 90% (preferably 50 to 90%) of the radius of the wafer 1 so that all the supporting points of the wafer 1 exceed the outer peripheral edge portion of the wafer 1.
【００３２】また、これらの支持突起１３、１４による
ウエハ１の支持ポイントの好ましい配置方法あるいは分
配方法を述べると、ウエハ１の挿入始端側に位置する支
持部材６の突起１４と、ウエハ１の中心１ａと、ウエハ
１の挿入方向Ｘとのなす角度Ａが約７５〜１８０度（好
ましくは９５〜１４０度）になるように配置する。他
方、ウエハ１の挿入後端側に位置する２つの対向する支
持部材５の突起１３と、ウエハ１の中心１ａと、ウエハ
１の挿入方向Ｘとのなす角度Ｂが約３０〜１２０度（好
ましくは３０〜８０度）になるように配置する。A preferred method of arranging or distributing the support points of the wafer 1 by the support projections 13 and 14 will be described. The projection 14 of the support member 6 located on the insertion start side of the wafer 1 and the center of the wafer 1. The arrangement is such that the angle A formed by 1a and the insertion direction X of the wafer 1 is approximately 75 to 180 degrees (preferably 95 to 140 degrees). On the other hand, the angle B formed between the protrusions 13 of the two opposing support members 5 located on the rear end side of the wafer 1, the center 1a of the wafer 1, and the insertion direction X of the wafer 1 is about 30 to 120 degrees (preferably. Is 30 to 80 degrees).
【００３３】これとは違った支持ポイントの配置方法あ
るいは分配方法の考え方を採用して、ウエハ１をボート
の所定位置に積載した状態で、ウエハ１の挿入始端側に
位置する２本の支持部材５の突起１３と、他方の、ウエ
ハ１の挿入後端側に位置する２つの対向する２本の支持
部材６の突起１４とが、ウエハ１の中心１ａを通りかつ
ウエハ１の挿入方向Ｘと平行な線Ｍに対して線対称にな
っていると共に、ウエハ１の中心１ａを通りかつウエハ
１の挿入方向Ｘと直角方向の線Ｎに対しても線対称にな
っていると、すべての支持ポイントに等しい荷重がかか
り、４本の突起の荷重バランスが良好になる。By adopting a different idea of the method of arranging the support points or the method of distributing the support points, two support members located on the insertion start end side of the wafer 1 in a state where the wafer 1 is loaded at a predetermined position of the boat. The protrusion 13 of No. 5 and the other protrusion 14 of the two opposing support members 6 located on the insertion rear end side of the wafer 1 pass through the center 1 a of the wafer 1 and the insertion direction X of the wafer 1. If it is axisymmetric with respect to a parallel line M and is also axisymmetric with respect to a line N passing through the center 1a of the wafer 1 and perpendicular to the insertion direction X of the wafer 1, all supports A load equal to the point is applied, and the load balance of the four protrusions becomes good.
【００３４】支持部材５、６の製造方法の一例を説明す
ると、まず図１に示すような断面形状と所望の長さを有
する板状支持部材を形成する。続いて、このような断面
形状の板状支持部材５、６に所定の間隔（例えば３ｍ
ｍ）毎に所定の幅（例えば２９×５．３５ｍｍ）を有す
る第１スリット９ａをウォータージェット等の手段を使
って開ける。そのとき、板状支持部材５、６の両方の側
端面５ａ、５ｂに残部を残す。一方の側端面５ａ側の残
部にその側端面５ａから第１スリット９ａまで所定の幅
（例えば３ｍｍ）の第２スリット９ｂをダイヤモンドカ
ッターで切り込むことにより、図２に示すように、支持
部材の全体を櫛形状にして、主として第１スリット９ａ
によって形成されたアーム部分の先端部に狭い面積のウ
エハ用の支持突起１３、１４を形成する。支持突起１
３、１４の高さは、例えば１ｍｍである。他方の側端５
ｂの残部は支柱として機能する。An example of a method of manufacturing the supporting members 5 and 6 will be described. First, a plate-shaped supporting member having a cross-sectional shape and a desired length as shown in FIG. 1 is formed. Then, the plate-shaped support members 5 and 6 having such a cross-sectional shape are spaced at a predetermined interval (for example, 3 m).
The first slit 9a having a predetermined width (for example, 29 × 5.35 mm) for each m) is opened using a means such as a water jet. At that time, the remaining portions are left on both side end surfaces 5a, 5b of the plate-shaped support members 5, 6. By cutting a second slit 9b having a predetermined width (for example, 3 mm) from the side end surface 5a to the first slit 9a in the remaining portion on the side of the one side end surface 5a with a diamond cutter, as shown in FIG. Is formed into a comb shape, and mainly the first slit 9a
Wafer supporting protrusions 13 and 14 having a small area are formed at the tip of the arm portion formed by. Support protrusion 1
The height of 3, 14 is, for example, 1 mm. The other side edge 5
The rest of b functions as a pillar.
【００３５】なお、支持部材５、６の製造方法におい
て、第１スリットを形成した後、全ての支持部材を固定
手段に固定し、その後で、第２スリットを形成すると、
スリット全体の精度が向上する。また、第１スリットを
形成した後、Ｓｉを含浸して、そのあとに、第２スリッ
トを形成すると、加工が容易となる。この様にウエハを
載せる第２スリットの加工は、加工面積が少なく、ま
た、後で加工するために高い精度が得られる。In the method of manufacturing the supporting members 5 and 6, after forming the first slits, all supporting members are fixed to the fixing means, and then the second slits are formed.
The accuracy of the entire slit is improved. Further, when the first slit is formed, Si is impregnated, and then the second slit is formed, processing becomes easy. In this way, the processing of the second slit for mounting the wafer has a small processing area, and high accuracy can be obtained because it is processed later.
【００３６】本発明のボートは従来のボートと比較して
ウエハのたわみ、そりおよびスリップ発生の低減に効果
が認められた。特にスリップ発生の抑制効果は大きく、
突起を有することによってボート支柱との接触を避けた
ことが大きな要因となっている。The boat of the present invention was found to be effective in reducing the occurrence of wafer deflection, warpage and slip as compared with the conventional boat. In particular, the effect of suppressing slippage is great,
A major factor is that the protrusions prevent contact with the boat support.
【図面の簡単な説明】[Brief description of drawings]
【図１】この発明の好適な実施例による縦型ボートの概
略を示す断面図。FIG. 1 is a sectional view schematically showing a vertical boat according to a preferred embodiment of the present invention.
【図２】図１の縦型ボートの一方の支持部材を示すＩＸ
−ＩＸ線に沿った断面図。2 is an IX showing one supporting member of the vertical boat of FIG.
-A sectional view taken along line IX.
【符号の説明】 １ ウエハ １ａ ウエハの中心 ５、６ 支持部材 ９、１０ スリット ９ａ、１０ａ 第１スリット ９ｂ、１０ｂ 第２スリット １３、１４ 支持突起 ─────────────────────────────────────────────────────
[Explanation of Codes] 1 Wafer 1a Wafer center 5,6 Support member 9,10 Slit 9a, 10a First slit 9b, 10b Second slit 13,14 Support protrusion ────────────── ─────────────────────────────────────────
【手続補正書】[Procedure amendment]
【提出日】平成４年１２月１日[Submission date] December 1, 1992
【手続補正１】[Procedure Amendment 1]
【補正対象書類名】明細書[Document name to be amended] Statement
【補正対象項目名】全文[Correction target item name] Full text
【補正方法】変更[Correction method] Change
【補正内容】[Correction content]
【書類名】 明細書[Document name] Statement
【発明の名称】 縦型ボートTitle of the invention Vertical boat
【特許請求の範囲】[Claims]
【発明の詳細な説明】Detailed Description of the Invention
【０００１】[0001]
【産業上の利用分野】この発明は、複数の支持部材を縦
方向に配列して、それらの支持部材に所定の間隔で形成
された複数のスリットにそれぞれ複数の半導体ウエハを
積載するための縦型ボートに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical arrangement for arranging a plurality of supporting members in a vertical direction and loading a plurality of semiconductor wafers on a plurality of slits formed at predetermined intervals on the supporting members. Regarding type boats.
【０００２】[0002]
【従来の技術】半導体ウエハの酸化・拡散処理工程で
は、多数の半導体ウエハをウエハ用ボートに積載して、
そのままウエハ用ボートを拡散炉内部に搬入して、そこ
で所望の熱処理を行う。2. Description of the Related Art In a semiconductor wafer oxidation / diffusion process, a large number of semiconductor wafers are loaded on a wafer boat,
The wafer boat is carried into the diffusion furnace as it is, and a desired heat treatment is performed therein.
【０００３】拡散炉の種類に応じて縦型ボートを使用し
たり、横型ボートを使用したりしている。A vertical boat or a horizontal boat is used depending on the type of diffusion furnace.
【０００４】従来の縦型ボートは、複数のウエハを水平
又はそれよりも少し傾斜した状態に支持するために複数
（例えば４本）の棒形状の支持部材が縦方向に配列され
ている。それらの支持部材には所定の間隔で複数のスリ
ットが形成されている。それらの複数のスリットにそれ
ぞれ複数の半導体ウエハを積載する。In a conventional vertical boat, a plurality of (for example, four) rod-shaped support members are vertically arranged to support a plurality of wafers horizontally or in a state in which they are slightly inclined. A plurality of slits are formed at predetermined intervals on those support members. A plurality of semiconductor wafers are loaded in the plurality of slits.
【０００５】従来の縦型ボートは、通常、全ての支持部
材が同一断面形状の棒材であった。例えば、断面形状は
円形や四角形などであった。このような断面形状の棒材
に形成されたスリットは、その奥底がウエハの外周に沿
ったアーク形状となっていた。換言すれば、スリットに
よって形成された支持面のウエハ円周方向の幅が小さか
った。In the conventional vertical boat, all the supporting members are usually rods having the same sectional shape. For example, the cross-sectional shape was circular or square. The slit formed on the bar having such a cross-sectional shape had an arc shape whose inner bottom was along the outer circumference of the wafer. In other words, the width of the supporting surface formed by the slit in the wafer circumferential direction was small.
【０００６】一方、大型のウエハの荷重応力を緩和させ
る手段として実開昭６２−１２８６３３号のように円弧
状板を支持棒に固定した形状が提案されているが、面精
度を出すのが困難で高価となる。On the other hand, as a means for relieving the load stress of a large-sized wafer, a shape in which an arc-shaped plate is fixed to a support rod is proposed as in Japanese Utility Model Laid-Open No. 62-128633, but it is difficult to obtain surface accuracy. It will be expensive.
【０００７】[0007]
【発明が解決しようとする課題】ボートは、支持部材が
棒形状であっても板形状であっても支持部材によってウ
エハを支持した状態で熱処理時に高温にさらされる。す
ると、従来の縦型ボートは、ウエハ外周縁部を支持する
ものであるため、特にウエハが大きな寸法のものになる
につれて、ウエハはその重量で撓み量が増大する。その
結果、ウエハが変形したりスリップしたりして、いわゆ
る結晶転移が発生し、製品歩留に悪い影響を及ぼす。The boat is exposed to a high temperature during heat treatment while the wafer is supported by the supporting member regardless of whether the supporting member is rod-shaped or plate-shaped. Then, since the conventional vertical boat supports the outer peripheral edge of the wafer, the amount of bending of the wafer increases due to its weight, especially as the size of the wafer increases. As a result, the wafer is deformed or slips, so-called crystal transition occurs, which adversely affects the product yield.
【０００８】さらに、支持部材の支持面がウエハの外周
縁部のみと接触していると、特定の支持部材に荷重応力
が集中する。そのため、特にウエハが大きな寸法のもの
になるにつれて、スリップの発生頻度が増加する。Further, when the supporting surface of the supporting member is in contact with only the outer peripheral edge of the wafer, the load stress concentrates on the specific supporting member. Therefore, the frequency of slips increases, especially as the size of the wafer increases.
【０００９】ウエハをボートに出し入れするために、ウ
エハの挿入始端側に位置する１対の支持部材の間隔をウ
エハの外径よりも大きくしていた。そのため、ウエハを
ボートの所定位置に積載した状態で、ウエハの挿入始端
側に位置する支持部材の前方端と、ウエハの中心と、ウ
エハの挿入方向とのなす角度が９０度を僅かに（例えば
数度）越す構造にするのがせいぜいであるが、その様な
ものであると、ウエハの重心がウエハの挿入始端側に位
置する対向する２つの支持部材の前方端間又はその近傍
に位置することになり、ウエハの挿入始端側に位置する
支持部材に荷重負担が偏ってしまう。例えば、ウエハの
挿入始端側に位置する１対の支持部材に７０〜９０％の
荷重応力が負荷される。In order to load and unload the wafer into and from the boat, the distance between the pair of support members located on the wafer insertion start side is made larger than the outer diameter of the wafer. Therefore, in a state where the wafers are loaded on the predetermined position of the boat, the angle formed between the front end of the support member located on the wafer insertion start side, the center of the wafer, and the wafer insertion direction is slightly smaller than 90 degrees (for example, It is best to use a structure that is several degrees apart, but in such a structure, the center of gravity of the wafer is located between the front ends of two opposing support members located on the wafer insertion start side or in the vicinity thereof. As a result, the load is unevenly distributed on the support member located on the insertion start end side of the wafer. For example, a load stress of 70 to 90% is applied to the pair of support members located on the insertion start end side of the wafer.
【００１０】また、熱処理時にボートの支持部材の支持
部分とウエハとの温度差による熱応力も複合的に加わっ
て、特にウエハが大きな寸法のものになるにつれて、ス
リップの発生頻度が増加する。Further, the thermal stress due to the temperature difference between the supporting portion of the supporting member of the boat and the wafer is also added during the heat treatment, and the frequency of slips increases especially as the wafer becomes larger.
【００１１】ウエハを熱処理するに際しては、拡散炉か
らの熱の伝達は輻射あるいは伝熱によるが、棒形状の支
持部材に所定の間隔で形成された複数のスリット（溝）
のところからのウエハへの伝熱もあり、局部的なウエハ
内部の温度分布の要因となっている。ウエハの自重及び
熱的温度分布による熱応力が、ウエハの挿入始端側に位
置する対向する１対の支持部材でのウエハのスリップ転
移の原因となり、ウエハの熱処理歩留を低下させてい
た。When heat-treating a wafer, heat is transferred from the diffusion furnace by radiation or heat transfer, but a plurality of slits (grooves) are formed in the rod-shaped support member at predetermined intervals.
There is also heat transfer from that location to the wafer, which is a factor of the local temperature distribution inside the wafer. The thermal stress due to the weight of the wafer and the thermal temperature distribution causes the slip transition of the wafer between the pair of opposing support members located on the insertion start end side of the wafer, thus lowering the heat treatment yield of the wafer.
【００１２】この発明は、このような従来技術の欠点を
解消して、大きな寸法のウエハを積載して熱処理をして
もウエハにスリップが生じないとともに、ウエハの撓み
量を小さくできる縦型ボートを提供することを目的とし
ている。The present invention solves the above-mentioned drawbacks of the prior art and prevents vertical slippage of wafers even if wafers of large size are loaded and heat-treated, and the amount of wafer deflection can be reduced. Is intended to provide.
【００１３】[0013]
【課題を解決するための手段】本願発明は複数の支持部
材を縦方向に配列して、それらの支持部材に所定の間隔
で形成された複数のスリットにそれぞれ複数の半導体ウ
エハを積載するための縦型ボートにおいて、支持部材を
断面直線形状の実質的に平坦な板で構成し、比較的幅の
広いスリットを数多く板幅の約２／３以上にわたって切
り込んで形成し、支持部材の全体をほぼ櫛形にして、し
かもスリットによって画成された支持アームの先端部分
に支持突起を設けて、支持突起がウエハの外周縁部を超
えてウエハの中央寄りの部分を支持する構成にしたこと
を特徴とする縦型ボートを要旨としている。SUMMARY OF THE INVENTION According to the present invention, a plurality of supporting members are arranged in a vertical direction, and a plurality of semiconductor wafers are loaded in a plurality of slits formed at predetermined intervals on the supporting members. In a vertical boat, the support member is composed of a substantially flat plate having a linear cross-section, and a large number of relatively wide slits are formed by cutting over about ⅔ or more of the plate width, and the entire support member is formed. In addition, the support arm has a comb shape and is provided with a support protrusion at a tip portion of the support arm defined by a slit, and the support protrusion supports a portion near the center of the wafer beyond the outer peripheral edge portion of the wafer. The main point is a vertical boat.
【００１４】[0014]
【発明の効果】この発明の縦型ボートによれば、ウエハ
の撓み、反り、スリップ発生を低減する効果がある。と
くにスリップ発生の抑制効果は非常に大きい。この発明
の縦型ボートを使用すれば、製品の歩留及び信頼性の向
上と、熱処理工程の時間短縮が実現できる。According to the vertical boat of the present invention, it is possible to reduce the occurrence of wafer bending, warpage and slippage. In particular, the effect of suppressing the occurrence of slip is very large. By using the vertical boat of the present invention, it is possible to improve the yield and reliability of products and shorten the heat treatment process time.
【００１５】さらに詳細に述べると、支持突起がウエハ
の外周縁部を超えてウエハの中央寄りの部分を支持する
ので、熱処理時に被熱処理物であるウエハの外周縁部に
支持部材の支持部分が接触しない。その結果、ウエハ外
周縁部を支持する従来の縦型ボートにみられた欠点が解
消される。例えば、半導体ウエハをボートの所定位置に
積載した状態で、ウエハの重心がウエハの挿入始端側に
位置する対向する２つの支持部材の支持部分間から相当
に挿入側に位置するので、ウエハの挿入始端側に位置す
る支持部材への荷重負担が軽減される。換言すれば、全
ての支持部材に荷重が適当に分散されるのである。それ
ゆえウエハがスリップを起こす危険が回避される。More specifically, since the supporting projections support the portion of the wafer near the center of the wafer beyond the outer peripheral edge portion of the wafer, the supporting portion of the support member is provided on the outer peripheral edge portion of the wafer to be heat-treated during the heat treatment. Do not touch. As a result, the drawbacks found in the conventional vertical boat supporting the outer peripheral edge of the wafer are eliminated. For example, when a semiconductor wafer is loaded on a predetermined position of a boat, the center of gravity of the wafer is located considerably on the insertion side from the supporting portions of the two opposing supporting members located on the insertion start end side of the wafer. The load on the supporting member located on the starting end side is reduced. In other words, the load is properly distributed on all the support members. Therefore, the risk of the wafer slipping is avoided.
【００１６】また、この発明の縦型ボートによれば、支
持突起がウエハの外周縁部を超えてウエハの中央寄りの
部分を支持するので、ウエハの外周縁部を支持する従来
例に比較して、ウエハの重量による撓み量を抑制する。
この効果は特にウエハが大きな寸法のものになるにつれ
て顕著になる。その結果、ウエハが変形したりスリップ
したりして結晶転移が発生することが防止でき、製品歩
留が向上する。Further, according to the vertical boat of the present invention, since the supporting projections support the portion of the wafer near the center of the wafer beyond the outer peripheral edge portion of the wafer, it is compared with the conventional example in which the outer peripheral edge portion of the wafer is supported. Thus, the amount of bending due to the weight of the wafer is suppressed.
This effect becomes remarkable especially as the size of the wafer increases. As a result, it is possible to prevent the wafer from being deformed or slipped to cause crystal transition, and the product yield is improved.
【００１７】さらに、支持突起がウエハの外周縁部を超
えてウエハの中央寄りの部分を支持するので、棒形状の
支持部材に形成された複数の溝のところからのウエハへ
の伝熱がなくなり、局部的なウエハ内部の温度分布が極
力抑制され、熱処理時にボートの支持部材の支持部分と
ウエハの外周部分との温度差による熱応力の発生が効果
的に抑制される。したがって、ウエハの自重及び熱的温
度分布による熱応力が原因となるウエハのスリップ転移
がなくなり、ウエハの熱処理歩留が向上する。Further, since the supporting projections support the portion of the wafer closer to the center beyond the outer peripheral edge portion of the wafer, heat transfer to the wafer from the plurality of grooves formed in the rod-shaped supporting member is eliminated. The local temperature distribution inside the wafer is suppressed as much as possible, and the generation of thermal stress due to the temperature difference between the supporting portion of the boat supporting member and the outer peripheral portion of the wafer during the heat treatment is effectively suppressed. Therefore, the slip transition of the wafer caused by the thermal stress due to the weight of the wafer and the thermal temperature distribution is eliminated, and the heat treatment yield of the wafer is improved.
【００１８】この発明の製造方法によれば、前述のよう
に顕著な効果を奏する縦型ボートを極めて容易にかつ高
い精度で作ることができる。特に高精度のスリット幅及
びスリット間隔を有する縦型ボートを多量生産するとき
に、この発明の製造方法は抜群の効果を発揮する。According to the manufacturing method of the present invention, it is possible to extremely easily and highly accurately manufacture the vertical boat that exhibits the remarkable effects as described above. In particular, when a large number of vertical boats having highly accurate slit widths and slit intervals are produced, the manufacturing method of the present invention exerts an outstanding effect.
【００１９】[0019]
【実施例】図１〜２はこの発明の好適な実施例による縦
型ボートを示している。縦型ボートは、多数のウエハ１
を積載するものであり、上下一対の板状固定手段２の間
に３本以上（代表的には４本）の支持部材５、６が縦方
向に配列されている。それらの支持部材５、６に所定の
間隔で縦方向に沿って形成された複数のスリット９、１
０にウエハ１を積載するようになっている。支持部材
５、６は、いずれも断面直線形状の実質的に平坦な板で
構成している。1 and 2 show a vertical boat according to a preferred embodiment of the present invention. The vertical boat has many wafers 1
3 or more (typically 4) supporting members 5 and 6 are vertically arranged between a pair of upper and lower plate-shaped fixing means 2. A plurality of slits 9 and 1 formed in the supporting members 5 and 6 at predetermined intervals along the vertical direction.
The wafer 1 is loaded on 0. Each of the support members 5 and 6 is formed of a substantially flat plate having a linear cross section.
【００２０】スリット９、１０が板状支持部材５、６の
板幅（つまり板の横方向の長さ）の約２／３以上（好ま
しくは３／４以上）にわたって切り込んで形成してあ
る。その結果、スリット９、１０によって画成された支
持部分がアーム部分を構成している。そのアーム部分の
先端部に狭い面積の支持突起１３、１４が設けてある。
アーム部分がウエハ１の外周縁部を超えて延びて、支持
突起１３、１４がウエハ１の中央寄りの部分を支持する
ようになっている。例えば、これらの支持突起１３、１
４によるウエハ１の支持ポイントが、ウエハ１の半径の
５０〜９０％に来てウエハ１の外周縁部を超えてウエハ
１の中央寄りの部分を支持するように配置するのが好ま
しい。しかも、支持ポイントがウエハ１の中心１ａから
同心円状に配置されのが好ましい。The slits 9 and 10 are formed by cutting the plate-shaped support members 5 and 6 over about 2/3 or more (preferably 3/4 or more) of the plate width (that is, the lateral length of the plate). As a result, the supporting portion defined by the slits 9 and 10 constitutes an arm portion. Supporting protrusions 13 and 14 having a small area are provided at the tip of the arm portion.
The arm portion extends beyond the outer peripheral edge portion of the wafer 1, and the support protrusions 13 and 14 support the portion of the wafer 1 near the center. For example, these support protrusions 13, 1
It is preferable that the support point of the wafer 1 according to 4 reaches 50 to 90% of the radius of the wafer 1 and supports the portion of the wafer 1 near the center beyond the outer peripheral edge portion of the wafer 1. Moreover, it is preferable that the support points are arranged concentrically from the center 1a of the wafer 1.
【００２１】板状支持部材は、図示しなかった形状を含
めて、いろいろと組み合わせて使用できる。The plate-like support member can be used in various combinations, including shapes not shown.
【００２２】支持突起を設けることにより、ウエハ外周
縁部での支持接触を避け、ウエハ外周縁部での応力集中
及びボートからの熱伝導を避けることができる。By providing the supporting protrusions, it is possible to avoid supporting contact at the outer peripheral edge of the wafer, and avoid stress concentration at the outer peripheral edge of the wafer and heat conduction from the boat.
【００２３】支持突起の高さはウエハの外周縁部が触れ
ない程度で良いが、ガス置換を考えると、０．３〜３ｍ
ｍ程の高さの方が望ましい。更に図に示すように比較的
幅の広いスリットを設けることにより、ボートからウエ
ハへの熱伝導と、ウエハ及びアーム部分間のガス滞留を
防ぐことができる。The height of the support protrusions may be such that the outer peripheral edge of the wafer does not touch, but considering gas replacement, 0.3-3 m.
A height of about m is desirable. Further, by providing a relatively wide slit as shown in the figure, heat conduction from the boat to the wafer and gas retention between the wafer and the arm portion can be prevented.
【００２４】ボートの材質は、石英ガラス、炭化珪素、
炭素、単結晶、多結晶シリコン、シリコン含浸炭化珪素
等が挙げられる。また、ボートは、純度、耐熱性、耐腐
食性の高いものが望ましい。石英ガラスの場合、溶接が
容易であるが、他の材質の場合は組立式も考えられる。The material of the boat is quartz glass, silicon carbide,
Examples thereof include carbon, single crystal, polycrystalline silicon, silicon-impregnated silicon carbide and the like. Further, it is desirable that the boat has high purity, high heat resistance, and high corrosion resistance. In the case of quartz glass, welding is easy, but in the case of other materials, an assembly type is also conceivable.
【００２５】また、図示した実施例では４本の支持部材
が使用されているが、本発明はこれに限定されない。Further, although four supporting members are used in the illustrated embodiment, the present invention is not limited to this.
【００２６】さらに、本発明の実施例を詳細に説明する
と、２対の同一の断面直線状の支持部材５、６が縦方向
に互いに平行に配置されている。これらの支持部材５、
６の上方端部と下方端部にはそれぞれ固定手段２が設け
られているが、一方の固定手段２だけを示し、他方の固
定手段は図示を省略している。Further, the embodiment of the present invention will be described in detail. Two pairs of identical support members 5 and 6 having the same linear cross section are arranged in parallel in the longitudinal direction. These support members 5,
Although fixing means 2 are provided at the upper end and the lower end of 6, respectively, only one fixing means 2 is shown, and the other fixing means is not shown.
【００２７】長さと厚みの異なる２種類の断面ほぼ直線
状の板状支持部材５、６が使用されている。ウエハ１の
挿入始端側に位置する２つの対向する支持部材５は、薄
くて長い断面ほぼ直線状の板状支持部材であり、多数の
スリット９を所定の間隔（図２）ごとに板状支持部材５
の幅の約４／５まで切り込んで多数の互いに平行なアー
ム部分を形成してあり、全体が櫛形になっている。他
方、ウエハ１の挿入後端側に位置する２つの対向する支
持部材６は、厚くて短い断面ほぼ直線状の板状支持部材
であり、多数のスリット１０を前述の支持部材５と同一
の間隔ごとに板状支持部材６の幅の約３／４まで切り込
んで多数の互いに平行なアーム部分を形成してあり、全
体が櫛形になっている。Two types of plate-shaped supporting members 5 and 6 having a substantially linear cross section are used, which have different lengths and thicknesses. The two opposing support members 5 located on the insertion start end side of the wafer 1 are thin and long plate-shaped support members having a substantially linear cross-section, and support a large number of slits 9 at predetermined intervals (FIG. 2) in a plate-like shape. Member 5
Is cut to about 4/5 of its width to form a large number of parallel arm portions, and the whole is comb-shaped. On the other hand, the two opposing support members 6 located on the rear end side of the wafer 1 are thick and short plate-shaped support members having a substantially linear cross section, and a large number of slits 10 are formed at the same intervals as the support member 5 described above. Each of them is cut to about 3/4 of the width of the plate-like support member 6 to form a large number of parallel arm portions, and the whole is comb-shaped.
【００２８】ウエハ１の挿入始端側に位置する２つの対
向する支持部材５は、スリット９の底９ａがウエハ１の
挿入方向Ｘと平行になるように形成してある。ウエハ１
の挿入後端側に位置する２つの支持部材６は、スリット
１０の底１０ａがウエハ１の外周円の接線と平行になる
ように形成してある。The two opposing support members 5 located on the insertion start end side of the wafer 1 are formed so that the bottom 9a of the slit 9 is parallel to the insertion direction X of the wafer 1. Wafer 1
The two supporting members 6 located on the rear end side of the insertion are formed so that the bottom 10a of the slit 10 is parallel to the tangent line of the outer peripheral circle of the wafer 1.
【００２９】これらのスリット９、１０によって画成さ
れたアーム部分の先端部に狭い面積（例えば１２ｍ
ｍ２）の支持突起１３、１４が設けてある。アーム部分
はウエハ１の外周縁部を超え、支持突起１３、１４はウ
エハ１の中央寄りの部分Ｐを支持するようになってい
る。A narrow area (for example, 12 m) is formed at the tip of the arm portion defined by these slits 9 and 10.
m 2 ) supporting protrusions 13, 14 are provided. The arm portion exceeds the outer peripheral edge portion of the wafer 1, and the support protrusions 13 and 14 support the portion P of the wafer 1 near the center.
【００３０】図２に示すように、これらのスリット９、
１０は、それぞれ幅の比較的広い第１スリット９ａと、
幅の比較的狭い第２スリット９ｂとからなる。As shown in FIG. 2, these slits 9,
10 is a first slit 9a having a relatively wide width,
The second slit 9b has a relatively narrow width.
【００３１】好ましくは、ウエハ１をボートの所定位置
に積載した状態で、前述の支持突起１３、１４によるウ
エハ１の支持ポイントは、すべてウエハ１の中心１ａか
ら同心円状に配置され、その同心円はウエハ１の半径の
５０〜９０％（好ましくは６５〜８５％）の領域Ｐに来
るようにし、ウエハ１の支持ポイントが全てウエハ１の
外周縁部を超えるように配置する。Preferably, all the supporting points of the wafer 1 by the above-mentioned supporting protrusions 13 and 14 are arranged concentrically from the center 1a of the wafer 1 in a state where the wafer 1 is loaded at a predetermined position on the boat. The wafer P is arranged so as to come to a region P of 50 to 90% (preferably 65 to 85%) of the radius of the wafer 1 so that all the supporting points of the wafer 1 exceed the outer peripheral edge portion of the wafer 1.
【００３２】また、これらの支持突起１３、１４による
ウエハ１の支持ポイントの好ましい配置方法あるいは分
配方法を述べると、ウエハ１の挿入始端側に位置する支
持部材６の突起１４と、ウエハ１の中心１ａと、ウエハ
１の挿入方向Ｘとのなす角度Ａが約７５〜１８０度（好
ましくは９５〜１４０度）になるように配置する。他
方、ウエハ１の挿入後端側に位置する２つの対向する支
持部材５の突起１３と、ウエハ１の中心１ａと、ウエハ
１の挿入方向Ｘとのなす角度Ｂが約３０〜１２０度（好
ましくは３０〜８０度）になるように配置する。A preferred method of arranging or distributing the support points of the wafer 1 by the support projections 13 and 14 will be described. The projection 14 of the support member 6 located on the insertion start side of the wafer 1 and the center of the wafer 1. The arrangement is such that the angle A formed by 1a and the insertion direction X of the wafer 1 is approximately 75 to 180 degrees (preferably 95 to 140 degrees). On the other hand, the angle B formed between the protrusions 13 of the two opposing support members 5 located on the rear end side of the wafer 1, the center 1a of the wafer 1, and the insertion direction X of the wafer 1 is about 30 to 120 degrees (preferably. Is 30 to 80 degrees).
【００３３】これとは違った支持ポイントの配置方法あ
るいは分配方法の考え方を採用して、ウエハ１をボート
の所定位置に積載した状態で、ウエハ１の挿入始端側に
位置する２本の支持部材５の突起１３と、他方の、ウエ
ハ１の挿入後端側に位置する２つの対向する２本の支持
部材６の突起１４とが、ウエハ１の中心１ａを通りかつ
ウエハ１の挿入方向Ｘと平行な線Ｍに対して線対称にな
っていると共に、ウエハ１の中心１ａを通りかつウエハ
１の挿入方向Ｘと直角方向の線Ｎに対しても線対称にな
っていると、すべての支持ポイントに等しい荷重がかか
り、４本の突起の荷重バランスが良好になる。By adopting a different idea of the method of arranging the support points or the method of distributing the support points, two support members located on the insertion start end side of the wafer 1 in a state where the wafer 1 is loaded at a predetermined position of the boat. The protrusion 13 of No. 5 and the other protrusion 14 of the two opposing support members 6 located on the insertion rear end side of the wafer 1 pass through the center 1 a of the wafer 1 and the insertion direction X of the wafer 1. If it is axisymmetric with respect to a parallel line M and is also axisymmetric with respect to a line N passing through the center 1a of the wafer 1 and perpendicular to the insertion direction X of the wafer 1, all supports A load equal to the point is applied, and the load balance of the four protrusions becomes good.
【００３４】支持部材５、６の製造方法の一例を説明す
ると、まず図１に示すような断面形状と所望の長さを有
する板状支持部材を形成する。続いて、このような断面
形状の板状支持部材５、６に所定の間隔（例えば３ｍ
ｍ）毎に所定の幅（例えば２９×５．３５ｍｍ）を有す
る第１スリット９ａをウォータージェット等の手段を使
って開ける。そのとき、板状支持部材５、６の両方の側
端面５ａ、５ｂに残部を残す。一方の側端面５ａ側の残
部にその側端面５ａから第１スリット９ａまで所定の幅
（例えば３ｍｍ）の第２スリット９ｂをダイヤモンドカ
ッターで切り込むことにより、図２に示すように、支持
部材の全体を櫛形状にして、主として第１スリット９ａ
によって形成されたアーム部分の先端部に狭い面積のウ
エハ用の支持突起１３、１４を形成する。支持突起１
３、１４の高さは、例えば１ｍｍである。他方の側端５
ｂの残部は支柱として機能する。An example of a method of manufacturing the supporting members 5 and 6 will be described. First, a plate-shaped supporting member having a cross-sectional shape and a desired length as shown in FIG. 1 is formed. Then, the plate-shaped support members 5 and 6 having such a cross-sectional shape are spaced at a predetermined interval (for example, 3 m).
The first slit 9a having a predetermined width (for example, 29 × 5.35 mm) for each m) is opened using a means such as a water jet. At that time, the remaining portions are left on both side end surfaces 5a, 5b of the plate-shaped support members 5, 6. By cutting a second slit 9b having a predetermined width (for example, 3 mm) from the side end surface 5a to the first slit 9a in the remaining portion on the side of the one side end surface 5a with a diamond cutter, as shown in FIG. Is formed into a comb shape, and mainly the first slit 9a
Wafer supporting protrusions 13 and 14 having a small area are formed at the tip of the arm portion formed by. Support protrusion 1
The height of 3, 14 is, for example, 1 mm. The other side edge 5
The rest of b functions as a pillar.
【００３５】なお、支持部材５、６の製造方法におい
て、第１スリットを形成した後、全ての支持部材を固定
手段に固定し、その後で、第２スリットを形成すると、
スリット全体の精度が向上する。また、第１スリットを
形成した後、Ｓｉを含浸して、そのあとに、第２スリッ
トを形成すると、加工が容易となる。この様にウエハを
載せる第２スリットの加工は、加工面積が少なく、ま
た、後で加工するために高い精度が得られる。In the method of manufacturing the supporting members 5 and 6, after forming the first slits, all supporting members are fixed to the fixing means, and then the second slits are formed.
The accuracy of the entire slit is improved. Further, when the first slit is formed, Si is impregnated, and then the second slit is formed, processing becomes easy. In this way, the processing of the second slit for mounting the wafer has a small processing area, and high accuracy can be obtained because it is processed later.
【００３６】本発明のボートは従来のボートと比較して
ウエハのたわみ、そりおよびスリップ発生の低減に効果
が認められた。特にスリップ発生の抑制効果は大きく、
突起を有することによってボート支柱との接触を避けた
ことが大きな要因となっている。The boat of the present invention was found to be effective in reducing the occurrence of wafer deflection, warpage and slip as compared with the conventional boat. In particular, the effect of suppressing slippage is great,
A major factor is that the protrusions prevent contact with the boat support.
【図面の簡単な説明】[Brief description of drawings]
【図１】この発明の好適な実施例による縦型ボートの概
略を示す断面図。FIG. 1 is a sectional view schematically showing a vertical boat according to a preferred embodiment of the present invention.
【図２】図１の縦型ボートの一方の支持部材を示すＩＸ
−ＩＸ線に沿った断面図。2 is an IX showing one supporting member of the vertical boat of FIG.
-A sectional view taken along line IX.
【符号の説明】 １ ウエハ １ａ ウエハの中心 ５、６ 支持部材 ９、１０ スリット ９ａ、１０ａ 第１スリット ９ｂ、１０ｂ 第２スリット １３、１４ 支持突起[Explanation of Codes] 1 Wafer 1a Wafer center 5,6 Support member 9,10 Slit 9a, 10a First slit 9b, 10b Second slit 13,14 Support protrusion
───────────────────────────────────────────────────── フロントページの続き (72)発明者 北沢 厚男 山形県西置賜郡小国町大字小国町378番地 東芝セラミックス株式会社小国製造所内 (72)発明者 目黒 和教 東京都新宿区西新宿１−26−２ 東芝セラ ミックス株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Atsushi Kitazawa Atsushi Kitazawa 378 Oguni, Oguni-cho, Nishikitama-gun, Yamagata Prefecture Oguni Factory, Toshiba Ceramics Co., Ltd. (72) Kazunori Meguro 1-26 Nishishinjuku, Shinjuku-ku, Tokyo -2 within Toshiba Cera Mix Co., Ltd.
Claims (1)
れらの支持部材に所定の間隔で形成された複数のスリッ
トにそれぞれ複数の半導体ウエハを積載するための縦型
ボートにおいて、支持部材を断面直線形状の実質的に平
坦な板で構成し、比較的幅の広いスリットを数多く板幅
の約２／３以上にわたって切り込んで形成し、支持部材
の全体をほぼ櫛形にして、しかもスリットによって画成
された支持アームの先端部分に支持突起を設けて、支持
突起がウエハの外周縁部を超えてウエハの中央寄りの部
分を支持する構成にしたことを特徴とする縦型ボート。1. A vertical boat for arranging a plurality of support members in a vertical direction and loading a plurality of semiconductor wafers in a plurality of slits formed at predetermined intervals on the support members. Is composed of a substantially flat plate with a linear cross section, and a large number of relatively wide slits are formed by cutting over about ⅔ or more of the plate width to make the entire supporting member almost comb-shaped, A vertical boat characterized in that a support protrusion is provided at a tip end portion of the defined support arm, and the support protrusion supports a portion near the center of the wafer beyond the outer peripheral edge portion of the wafer.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33955392A JP3280437B2 (en) | 1992-11-27 | 1992-11-27 | Vertical boat |
| US08/151,386 US5492229A (en) | 1992-11-27 | 1993-11-12 | Vertical boat and a method for making the same |
| KR1019930025212A KR0129656B1 (en) | 1992-11-27 | 1993-11-25 | Vertical boat and a method for making the same |
| DE4340288A DE4340288C2 (en) | 1992-11-27 | 1993-11-26 | Vertical boat and method for its production |
| GB9324463A GB2272964B (en) | 1992-11-27 | 1993-11-29 | A vertical boat and a method for making the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33955392A JP3280437B2 (en) | 1992-11-27 | 1992-11-27 | Vertical boat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06168902A true JPH06168902A (en) | 1994-06-14 |
| JP3280437B2 JP3280437B2 (en) | 2002-05-13 |
Family
ID=18328563
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33955392A Expired - Fee Related JP3280437B2 (en) | 1992-11-27 | 1992-11-27 | Vertical boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3280437B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1997032339A1 (en) * | 1996-02-29 | 1997-09-04 | Tokyo Electron Limited | Heat-treating boat for semiconductor wafer |
| CN1079577C (en) * | 1995-05-05 | 2002-02-20 | 圣戈本陶瓷及塑料股份有限公司 | Slip free vertical rack design |
| WO2004088744A1 (en) * | 2003-03-31 | 2004-10-14 | Sumitomo Mitsubishi Silicon Corporation | Silicon wafer heat treatment jig, and silicon wafer heat treatment method |
| JP2007273673A (en) * | 2006-03-31 | 2007-10-18 | Covalent Materials Corp | Longitudinal wafer boat |
| JP2007329173A (en) * | 2006-06-06 | 2007-12-20 | Covalent Materials Corp | Vertical wafer board |
| JP2009076621A (en) * | 2007-09-20 | 2009-04-09 | Covalent Materials Corp | Vertical boat for heat treatment |
| JP2014093522A (en) * | 2012-11-06 | 2014-05-19 | Tera Semicon Corp | Batch type substrate processing device |
-
1992
- 1992-11-27 JP JP33955392A patent/JP3280437B2/en not_active Expired - Fee Related
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1079577C (en) * | 1995-05-05 | 2002-02-20 | 圣戈本陶瓷及塑料股份有限公司 | Slip free vertical rack design |
| WO1997032339A1 (en) * | 1996-02-29 | 1997-09-04 | Tokyo Electron Limited | Heat-treating boat for semiconductor wafer |
| US6062853A (en) * | 1996-02-29 | 2000-05-16 | Tokyo Electron Limited | Heat-treating boat for semiconductor wafers |
| WO2004088744A1 (en) * | 2003-03-31 | 2004-10-14 | Sumitomo Mitsubishi Silicon Corporation | Silicon wafer heat treatment jig, and silicon wafer heat treatment method |
| US7481888B2 (en) | 2003-03-31 | 2009-01-27 | Sumco Corporation | Heat treatment jig and heat treatment method for silicon wafer |
| US8026182B2 (en) | 2003-03-31 | 2011-09-27 | Sumco Corporation | Heat treatment jig and heat treatment method for silicon wafer |
| JP2007273673A (en) * | 2006-03-31 | 2007-10-18 | Covalent Materials Corp | Longitudinal wafer boat |
| JP2007329173A (en) * | 2006-06-06 | 2007-12-20 | Covalent Materials Corp | Vertical wafer board |
| JP2009076621A (en) * | 2007-09-20 | 2009-04-09 | Covalent Materials Corp | Vertical boat for heat treatment |
| JP2014093522A (en) * | 2012-11-06 | 2014-05-19 | Tera Semicon Corp | Batch type substrate processing device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3280437B2 (en) | 2002-05-13 |
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