JPH061683B2 - Secondary ion mass spectrometer - Google Patents
Secondary ion mass spectrometerInfo
- Publication number
- JPH061683B2 JPH061683B2 JP60274997A JP27499785A JPH061683B2 JP H061683 B2 JPH061683 B2 JP H061683B2 JP 60274997 A JP60274997 A JP 60274997A JP 27499785 A JP27499785 A JP 27499785A JP H061683 B2 JPH061683 B2 JP H061683B2
- Authority
- JP
- Japan
- Prior art keywords
- secondary ion
- electron beam
- potential
- mass spectrometer
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Analysing Materials By The Use Of Radiation (AREA)
Description
【発明の詳細な説明】 ［発明の技術分野］ この発明は、二次イオン質量分析計に関し、特に分析試
料の測定面の電圧を一定に保ち、定量性並びに感度の向
上を図る二次イオン質量分析計に関する。Description: TECHNICAL FIELD OF THE INVENTION The present invention relates to a secondary ion mass spectrometer, and more particularly to a secondary ion mass spectrometer for maintaining a constant voltage on the measurement surface of an analytical sample to improve quantitativeness and sensitivity. Regarding the analyzer.
［発明の技術的背景及びその問題点］ 二次イオン質量分析計として従来、第２図に示すような
ものが知られている。この二次イオン質量分析計は、例
えば約１０keＶのアルゴンイオンのような高速一次イオ
ンを放出するイオン源１、このイオン源１のターゲット
となる分析試料２とその試料ホルダ３、及び分析試料２
からの二次イオンの質量分析計４を真空容器５内に収容
し、この真空容器５は真空ポンプ６により排気するよう
にした構成を備えていた。[Technical Background of the Invention and Problems Thereof] A secondary ion mass spectrometer as shown in FIG. 2 is conventionally known. This secondary ion mass spectrometer comprises an ion source 1 which emits fast primary ions such as argon ions of about 10 keV, an analysis sample 2 which is a target of the ion source 1 and its sample holder 3, and an analysis sample 2.
The secondary ion mass spectrometer 4 from No. 1 was housed in a vacuum container 5, and the vacuum container 5 was configured to be evacuated by a vacuum pump 6.
そして二次イオン質量の分析に際しては、まず真空ポン
プ６によって真空容器５内を充分に排気する。そしてイ
オン源１からの高速一次イオン７にて分析試料２を衝撃
する。これにより、分析試料２の表面はスパッタされ、
原始や分子等の粒子となって飛散する。この飛散粒子中
に含まれているイオン状態の粒子が二次イオン８であ
る。この二次イオン８は質量分析計４に入射し、ここで
その質量分析が行なわれて、分析試料２の組成、不純物
等が同定される。When analyzing the secondary ion mass, first, the vacuum container 5 is sufficiently evacuated by the vacuum pump 6. Then, the analysis sample 2 is bombarded with the fast primary ions 7 from the ion source 1. As a result, the surface of the analysis sample 2 is sputtered,
Scatter as particles of primitive or molecules. The particles in the ionic state contained in the scattered particles are the secondary ions 8. The secondary ions 8 enter the mass spectrometer 4, where the mass analysis is performed to identify the composition, impurities, etc. of the analysis sample 2.
このような従来の二次イオン質量分析計では、分析試料
２が一次イオン７の荷電粒子で衝撃され、同時に二次イ
オン８や二次電子を放出する。その結果、分析試料２が
電気的絶縁性の高い物質である場合には、荷電粒子の入
出により表面の電位が上昇し、また時間的に変動する。In such a conventional secondary ion mass spectrometer, the analysis sample 2 is bombarded with the charged particles of the primary ions 7 and simultaneously emits the secondary ions 8 and secondary electrons. As a result, when the analysis sample 2 is a substance having a high electrical insulation property, the potential of the surface rises due to the inflow and outflow of the charged particles, and also changes with time.
ところで、分析試料２の表面の電位が変動すると、放出
される二次イオンの強度も変動する。この特性をアルミ
ニウムＡｌについて測定すると、第３図に示すようなも
のとなる。この第３図から明らかなように、二次イオン
強度は分析試料の電位に強く依存するので、分析試料２
の表面の電位を一定に保ってはいなければ定量性の精度
の高い質量分析を行なえない。同時に、感度の良い測定
のためには、二次イオン強度の高い電位Ｖａの付近に分
析試料２の電位を保っておかなければならない。By the way, when the potential on the surface of the analytical sample 2 changes, the intensity of the emitted secondary ions also changes. When this characteristic is measured for aluminum Al, it becomes as shown in FIG. As is apparent from FIG. 3, since the secondary ion intensity strongly depends on the potential of the analytical sample, the analytical sample 2
If the potential of the surface of is not kept constant, mass spectrometry with high quantitative accuracy cannot be performed. At the same time, in order to measure with high sensitivity, the potential of the analytical sample 2 must be kept near the potential Va with high secondary ion intensity.
しかしながら従来では、そのような分析試料の表面に電
位を感度の良い値に一定に保つといった構成がとられて
おらず、定量性の精度が高く、感度の良い二次イオン質
量分析が実現できなかった。However, conventionally, such a structure that the potential of the surface of the analysis sample is kept constant at a value with high sensitivity is not adopted, and thus high quantitative accuracy and high sensitivity secondary ion mass spectrometry cannot be realized. It was
［発明の目的］ この発明は、このような従来の問題に鑑みてなされたも
のであって、分析試料の表面の電位を一定に保つことに
より定量性の精度を良くし、しかも感度の良くした二次
イオン質量分析計を提供することを目的とする。[Object of the Invention] The present invention has been made in view of such a conventional problem, and by maintaining the potential of the surface of the analysis sample constant, the accuracy of quantitativeness was improved and the sensitivity was improved. An object is to provide a secondary ion mass spectrometer.
［発明の概要］ この発明は、分析試料の測定面に平行にかつ表面近傍を
通過する電子ビームを放出する電子銃と、この電子銃に
対向し、前記電子ビームの偏向量を検出する電子ビーム
検出器と、前記電子ビーム検出器の出力信号から前記分
析試料の表面電位を制御する直流電源とを備えて成る二
次イオン質量分析計を要旨とし、分析試料の表面の電位
を二次イオン強度の高い所定の値に制御しながら二次イ
オンの質量分析を行なうものである。[Summary of the Invention] The present invention relates to an electron gun that emits an electron beam that passes parallel to the measurement surface of an analytical sample and near the surface thereof, and an electron beam that faces the electron gun and detects the deflection amount of the electron beam. A secondary ion mass spectrometer comprising a detector and a direct current power source for controlling the surface potential of the analysis sample from the output signal of the electron beam detector is a gist, and the potential of the surface of the analysis sample is the secondary ion intensity. The secondary ion mass analysis is carried out while controlling to a predetermined value of high.
［発明の実施例］ 以下、この発明の実施例を図に基いて詳説する。Embodiments of the Invention Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図はこの発明の一実施例を示し、第２図に示した従
来例と同様に、イオン源１１、分析試料１２とその試料
ホルダ１３、及び二次イオンに対する質量分析計１４が
真空容器１５内に収容され、この真空容器１５は真空ポ
ンプ１６によって排気される構成となっている。FIG. 1 shows an embodiment of the present invention. As in the conventional example shown in FIG. 2, an ion source 11, an analytical sample 12 and its sample holder 13, and a mass spectrometer 14 for secondary ions are a vacuum container. The vacuum container 15 is housed in the vacuum container 15, and the vacuum container 15 is evacuated by the vacuum pump 16.
そして、この実施例の特徴とするところは、分析試料１
２の表面近傍に平行に電子ビームを放出する電子銃１７
及び、この電子銃１７に対向し、電子銃１７からの電子
ビームの偏向量を検出する電子ビーム検出器１８を設け
た点にある。この電子ビーム検出器１８には増幅器１
９、この増幅器１９の出力に応じて分析試料１２の電位
を制御する直流電源２０が接続されている。The characteristic feature of this embodiment is that the analysis sample 1
Electron gun 17 for emitting an electron beam parallel to the vicinity of the surface 2
Further, an electron beam detector 18 that faces the electron gun 17 and detects the deflection amount of the electron beam from the electron gun 17 is provided. The electron beam detector 18 has an amplifier 1
9. A DC power supply 20 for controlling the potential of the analysis sample 12 according to the output of the amplifier 19 is connected.
上記構成の二次イオン質量分析計の動作を次に説明す
る。イオン源１１からの高速一次イオン２１が分析試料
１２を衝撃し、この分析試料１２から二次イオン２２が
放出され、質量分析計１４に入射する。そしてこの質量
分析計１４が二次イオン２２の質量分析を行なうことに
より、分析試料１２の組成や不純物の同定を行なう。The operation of the secondary ion mass spectrometer configured as described above will be described below. The fast primary ions 21 from the ion source 11 bombard the analytical sample 12, and secondary ions 22 are emitted from the analytical sample 12 and enter the mass spectrometer 14. Then, the mass spectrometer 14 performs the mass analysis of the secondary ions 22 to identify the composition and impurities of the analysis sample 12.
この際、電子銃１７からは、電子ビーム検出器１８に向
けて電子ビーム２３が放出される。この電子ビーム２３
は、分析試料１２の表面近傍を平行に通過する時にその
電界により偏向して受ける。つまり、分析試料１２の表
面の電位が正の時には分析試料１２が近づくように偏向
され、負の時には遠のくように偏向される。At this time, the electron beam 23 is emitted from the electron gun 17 toward the electron beam detector 18. This electron beam 23
Are deflected and received by the electric field when they pass near the surface of the analysis sample 12 in parallel. That is, when the surface potential of the analysis sample 12 is positive, the analysis sample 12 is deflected so as to approach, and when the potential is negative, it is deflected so as to be far.
そこで、電位ビーム検出器１８は、この偏向を受けた電
子ビーム２３の偏向量に比例した信号を出力する。そし
て増幅器１９がこの信号を増幅して直流電源２０に与
え、直流電源２０の出力をコントロールする。つまり電
子ビーム２３が分析試料１２に近づく場合には分析試料
１２及び試料ホルダ１３の電位を低くし、電子ビーム２
３が分析試料１２から遠のく場合には電位を高くする方
向に直流電源２０の出力を調節し、分析試料１２の表面
の電位が二次イオン強度の高いＶａ値になるようにフィ
ードバック制御する。尚、この電位Ｖａは、分析試料１
２の種類によって異なる値をとり、最適値は実験的に定
められる。Therefore, the potential beam detector 18 outputs a signal proportional to the deflection amount of the electron beam 23 that has received this deflection. Then, the amplifier 19 amplifies this signal and supplies it to the DC power supply 20 to control the output of the DC power supply 20. That is, when the electron beam 23 approaches the analysis sample 12, the potentials of the analysis sample 12 and the sample holder 13 are lowered, and the electron beam 2
When 3 is far from the analysis sample 12, the output of the DC power supply 20 is adjusted in the direction of increasing the potential, and feedback control is performed so that the potential on the surface of the analysis sample 12 has a Va value with high secondary ion intensity. In addition, this potential Va is the analytical sample 1
The optimum value is determined experimentally by taking different values depending on the two types.
このようにして、分析試料１２が電気的絶縁性の高い物
質であっても、その表面の電位を効率の良い、つまり二
次イオン強度が高く、感度の良い値に保ちながら二次イ
オン質量分析が行なえるのである。In this way, even if the analysis sample 12 is a substance having a high electrical insulation property, the potential of the surface of the analysis sample 12 is efficient, that is, the secondary ion intensity is high, and the secondary ion mass spectrometry is performed while keeping the sensitivity value. Can be done.
［発明の効果］ この発明は、電子銃から電子ビームを放出して分析試料
の表面近傍に平行に通過させ、分析試料の表面の電位に
よって偏向させてその偏向量を電子ビーム検出器によっ
て検出し、この電子ビーム検出器の出力信号からの分析
試料の表面電位を与える直流電源を制御するものであ
る。そのために、表面電位の変動により二次イオン強度
が変動する分析試料に対して常に一定の表面電位を与え
ることができ、定量性の精度に高い二次イオンの質量分
析が行なえる。また、分析試料の表面電位を二次イオン
強度の高い値に設定することにより、感度の良い測定が
実現できる利点も有する。EFFECTS OF THE INVENTION The present invention emits an electron beam from an electron gun, passes it in parallel with the vicinity of the surface of an analysis sample, deflects it by the potential of the surface of the analysis sample, and detects the deflection amount by an electron beam detector. , Which controls the DC power supply which gives the surface potential of the analysis sample from the output signal of this electron beam detector. Therefore, a constant surface potential can always be applied to an analysis sample whose secondary ion intensity fluctuates due to fluctuations in the surface potential, and secondary ion mass analysis with high quantitative accuracy can be performed. Further, by setting the surface potential of the analysis sample to a value having a high secondary ion intensity, there is an advantage that highly sensitive measurement can be realized.
第１図はこの発明の一実施例の説明図、第２図は従来例
の説明図、第３図はＡｌに対する電位一二次イオン強度
特性図である。 １１…イオン源 １２…分析試料 １３…試料ホルダ １４…質量分析計 １５…真空容器 １６…真空ポンプ １７…電子銃 １８…電子ビーム検出器 １９…増幅器 ２０…直流電源 ２１…一次イオン ２２…二次イオン ２３…電子ビームFIG. 1 is an explanatory diagram of an embodiment of the present invention, FIG. 2 is an explanatory diagram of a conventional example, and FIG. 3 is a potential-secondary ion intensity characteristic diagram for Al. 11 ... Ion source 12 ... Analytical sample 13 ... Sample holder 14 ... Mass spectrometer 15 ... Vacuum container 16 ... Vacuum pump 17 ... Electron gun 18 ... Electron beam detector 19 ... Amplifier 20 ... DC power supply 21 ... Primary ion 22 ... Secondary Ion 23 ... Electron beam
Claims (1)
通過する電子ビームを放出する電子銃と、この電子銃に
対向し、前記電子ビームの偏向量を検出する電子ビーム
検出器と、前記電子ビーム検出器の出力信号から前記分
析試料の表面電位を制御する直流電源とを備えて成る二
次イオン質量分析計。1. An electron gun that emits an electron beam that passes parallel to the measurement surface of an analytical sample and passes through the vicinity of the surface, and an electron beam detector that faces the electron gun and detects the deflection amount of the electron beam. A secondary ion mass spectrometer comprising: a DC power supply that controls the surface potential of the analysis sample from the output signal of the electron beam detector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60274997A JPH061683B2 (en) | 1985-12-09 | 1985-12-09 | Secondary ion mass spectrometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60274997A JPH061683B2 (en) | 1985-12-09 | 1985-12-09 | Secondary ion mass spectrometer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62136745A JPS62136745A (en) | 1987-06-19 |
| JPH061683B2 true JPH061683B2 (en) | 1994-01-05 |
Family
ID=17549455
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60274997A Expired - Lifetime JPH061683B2 (en) | 1985-12-09 | 1985-12-09 | Secondary ion mass spectrometer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH061683B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023095365A1 (en) * | 2021-11-25 | 2023-06-01 | 株式会社島津製作所 | Surface analysis method and surface analysis device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5174483B2 (en) * | 2008-02-08 | 2013-04-03 | 株式会社日立ハイテクノロジーズ | Charged particle beam apparatus and method for knowing charged state of sample surface |
| CN112649648A (en) * | 2019-10-12 | 2021-04-13 | 中国科学院国家空间科学中心 | Device and method for measuring satellite surface potential by using electronic deflection method |
-
1985
- 1985-12-09 JP JP60274997A patent/JPH061683B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023095365A1 (en) * | 2021-11-25 | 2023-06-01 | 株式会社島津製作所 | Surface analysis method and surface analysis device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62136745A (en) | 1987-06-19 |
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