JPH06162447A - Thin film magnetic head - Google Patents
Thin film magnetic headInfo
- Publication number
- JPH06162447A JPH06162447A JP31693092A JP31693092A JPH06162447A JP H06162447 A JPH06162447 A JP H06162447A JP 31693092 A JP31693092 A JP 31693092A JP 31693092 A JP31693092 A JP 31693092A JP H06162447 A JPH06162447 A JP H06162447A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- core
- film core
- magnetic head
- bias conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 78
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 45
- 239000004020 conductor Substances 0.000 claims abstract description 37
- 230000000694 effects Effects 0.000 claims abstract description 10
- 230000005611 electricity Effects 0.000 abstract description 13
- 230000003068 static effect Effects 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
- G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
- G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
- G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/40—Protective measures on heads, e.g. against excessive temperature
Landscapes
- Magnetic Heads (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は磁気抵抗効果型の薄膜磁
気ヘッドの構造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the structure of a magnetoresistive thin film magnetic head.
【０００２】[0002]
【従来の技術】従来の技術について、図４を参照して説
明する。図４は従来例によるヨーク型磁気抵抗効果薄膜
磁気ヘッドの断面図である。2. Description of the Related Art A conventional technique will be described with reference to FIG. FIG. 4 is a sectional view of a yoke type magnetoresistive thin film magnetic head according to a conventional example.
【０００３】従来は図４に示すように情報記録媒体の対
向面１０に、磁気ギャップ１１を有し、磁気抵抗効果素
子（ＭＲ素子以下、単にＭＲ素子と記す）１２に信号磁
束を導びく薄膜コア（上部コア）１３が配され、ＭＲ素
子１２の下側には、上部コア１３及び下部コアとなる基
板１５と鎖交する様バイアス導体１４が設けられてい
る。ここで基板１５の材料は、Ｍｎ−Ｚｎフェライト、
Ｎｉ−Ｚｎフェライト等の強磁性基板である。また、上
部コア１３は第１の薄膜コア１及び第２の薄膜コア２と
から構成されている。また、この例では、ＭＲ素子１２
と上部コア１３、バイアス導体１４と上部コア１３、バ
イアス導体１４とＭＲ素子１２とはそれぞれ絶縁層１６
で絶縁されている。Conventionally, as shown in FIG. 4, a thin film having a magnetic gap 11 on a facing surface 10 of an information recording medium and guiding a signal magnetic flux to a magnetoresistive effect element (hereinafter referred to as MR element) 12 is shown. A core (upper core) 13 is arranged, and a bias conductor 14 is provided below the MR element 12 so as to interlink with an upper core 13 and a substrate 15 serving as a lower core. Here, the material of the substrate 15 is Mn-Zn ferrite,
It is a ferromagnetic substrate such as Ni-Zn ferrite. The upper core 13 is composed of a first thin film core 1 and a second thin film core 2. Further, in this example, the MR element 12
And the upper core 13, the bias conductor 14 and the upper core 13, the bias conductor 14 and the MR element 12 are insulating layers 16 respectively.
Is insulated with.
【０００４】それぞれの距離は例えば、ＭＲ素子１２−
上部コア１３間 ０．２μｍ、バイアス導体１４−上部
コア１３間 ２μｍ、バイアス導体１４−ＭＲ素子１２
は１．８μｍ程度である。また、バイアス導体１４と情
報記録媒体の対向面１０間の距離は１５μｍ程度であ
る。The respective distances are, for example, the MR element 12-
0.2 μm between upper core 13 and 2 μm between bias conductor 14 and upper core 13, bias conductor 14-MR element 12
Is about 1.8 μm. The distance between the bias conductor 14 and the facing surface 10 of the information recording medium is about 15 μm.
【０００５】[0005]
【発明が解決しようとする課題】従来の薄膜磁気再生ヘ
ッドは、ＭＲ素子１２と上部コア１３間の距離が短か
く、情報記録媒体など磁気ギャップ部１１に接する、ま
たは近接する物体の静電気が放電する際、ＭＲ素子１２
がその通り道となりＭＲ素子１２が破壊する事があっ
た。In the conventional thin film magnetic reproducing head, the distance between the MR element 12 and the upper core 13 is short, and the static electricity of an object which is in contact with or close to the magnetic gap 11 such as an information recording medium is discharged. MR element 12
However, the MR element 12 may be destroyed.
【０００６】そこで本発明の目的は、従来技術の欠点を
解消できる高信頼性の薄膜磁気ヘッドを提供することに
ある。Therefore, an object of the present invention is to provide a highly reliable thin film magnetic head capable of solving the drawbacks of the prior art.
【０００７】[0007]
【課題を解決するための手段】前記目的を達成するため
に本発明は、記録媒体側に配置される第１の薄膜コアと
該第１の薄膜コアから離間配置される第２の薄膜コアと
からなる上部コアと、前記第１の薄膜コアより磁気ギャ
ップを介して配置される下部コアとを有し、前記両コア
間に絶縁部を介して配置される磁気抵抗効果素子とバイ
アス導体とを設けてなるヨーク型の薄膜磁気ヘッドにお
いて、前記第１の薄膜コア及び前記バイアス導体間の距
離を前記第１の薄膜コア及び前記磁気抵抗効果素子間の
距離よりも小としてなることを特徴とする。In order to achieve the above object, the present invention provides a first thin film core arranged on the recording medium side and a second thin film core arranged apart from the first thin film core. And a lower core arranged via a magnetic gap from the first thin film core, and a magnetoresistive element and a bias conductor arranged between the two cores via an insulating portion. In the provided yoke-type thin film magnetic head, the distance between the first thin film core and the bias conductor is smaller than the distance between the first thin film core and the magnetoresistive effect element. .
【０００８】また、記録媒体側に配置される第１の薄膜
コアと該第１の薄膜コアから離間配置される第２の薄膜
コアとからなる上部コアと、前記第１の薄膜コアより磁
気ギャップを介して配置される下部コアとを有し、前記
両コア間に絶縁部を介して配置される磁気抵抗効果素子
とバイアス導体とを設けてなるヨーク型の薄膜磁気ヘッ
ドにおいて、前記バイアス導体の一端を前記記録媒体の
対向面に露出させてなることを特徴とする。Further, an upper core composed of a first thin film core arranged on the recording medium side and a second thin film core arranged apart from the first thin film core, and a magnetic gap from the first thin film core. A yoke-type thin-film magnetic head having a lower core disposed via a bias conductor and a magnetoresistive effect element disposed via an insulating portion between the two cores. It is characterized in that one end is exposed to the facing surface of the recording medium.
【０００９】また、前記バイアス導体の一部をＧＮＤに
接続してなることを特徴とする。Further, a part of the bias conductor is connected to GND.
【００１０】[0010]
【作用】本発明は以上のように、第１の薄膜コア及びバ
イアス導体間の距離を第１の薄膜コア及び磁気抵抗素子
間の距離よりも小としているので、磁気ギャップ部の静
電気は第１の薄膜コア→バイアス導体→再生回路のルー
トで放電され、磁気抵抗効果素子（ＭＲ素子）には流れ
ない。これによりＭＲ素子の静電気破壊を防止でき、高
信頼性の薄膜磁気ヘッドを提供できる。As described above, according to the present invention, the distance between the first thin film core and the bias conductor is smaller than the distance between the first thin film core and the magnetoresistive element. Of the thin film core → bias conductor → reproducing circuit, and does not flow to the magnetoresistive effect element (MR element). As a result, electrostatic breakdown of the MR element can be prevented, and a highly reliable thin film magnetic head can be provided.
【００１１】また、バイアス導体の一端を記録媒体との
接触面に露出させることにより、磁気ギャップ部の静電
気は直接、バイアス導体→再生回路のルートで放電され
るので、より高い静電気耐量の薄膜磁気ヘッドを提供で
きる。Further, by exposing one end of the bias conductor to the contact surface with the recording medium, the static electricity in the magnetic gap portion is directly discharged along the route of the bias conductor and the reproducing circuit, so that the thin-film magnetic field having a higher electrostatic resistance can be discharged. A head can be provided.
【００１２】また、前記バイアス導体の一部をＧＮＤに
接続することにより、ノイズレベルの静電気がＭＲ素子
に流れることも防止でき、より信頼性の向上を図れる。Further, by connecting a part of the bias conductor to GND, it is possible to prevent static electricity of noise level from flowing to the MR element, and further improve reliability.
【００１３】[0013]
【実施例】本発明の一実施例について、図１を参照して
説明する。図１は本実施例によるヨーク型磁気抵抗効果
型薄膜磁気ヘッド（以下、単に薄膜磁気ヘッドと記す）
の断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described with reference to FIG. FIG. 1 shows a yoke type magnetoresistive effect thin film magnetic head according to this embodiment (hereinafter, simply referred to as a thin film magnetic head).
FIG.
【００１４】ここでは、図４の従来例と異なる点につい
てのみ説明する。なお、図４と同一機能部分には同一記
号を付している。Here, only the points different from the conventional example shown in FIG. 4 will be described. It should be noted that the same functional parts as those in FIG. 4 are denoted by the same symbols.
【００１５】本実施例による薄膜磁気ヘッドは、図１に
示すように、バイアス導体３が第１の薄膜コア１の下部
にまで延びる構造とするとともに、ＭＲ素子１２と第１
の薄膜コア１、第２薄膜コア２との間の距離ａが、ＭＲ
素子１２とバイアス導体３との間の距離ｂよりも大きく
なるような構造としている。ここでｂ≧０である。As shown in FIG. 1, the thin film magnetic head according to the present embodiment has a structure in which the bias conductor 3 extends to a lower portion of the first thin film core 1, and the MR element 12 and the first thin film core 1 are provided.
The distance a between the thin film core 1 and the second thin film core 2 is
The structure is such that it is larger than the distance b between the element 12 and the bias conductor 3. Here, b ≧ 0.
【００１６】このような構造とすることにより、バイア
ス導体３−第１の薄膜コア１間の絶縁耐圧の方が、ＭＲ
素子１２−第１の薄膜コア１間の絶縁耐圧より小さくな
る。このため、磁気ギャップ１１に接する、または近接
する物体の静電気は、従来は第１の薄膜コア１→ＭＲ素
子１２→再生回路（図示せず）のルートで放電され、Ｍ
Ｒ素子１２が破壊される事があったが、本実施例では第
１の薄膜コア１→バイアス導体３→再生回路のルートで
放電させる事になり、ＭＲ素子１２の破壊を防ぐ事がで
きる。With such a structure, the withstand voltage between the bias conductor 3 and the first thin film core 1 is MR.
It becomes smaller than the withstand voltage between the element 12 and the first thin film core 1. Therefore, the static electricity of an object in contact with or close to the magnetic gap 11 is conventionally discharged through the route of the first thin film core 1 → the MR element 12 → the reproducing circuit (not shown), and M
Although the R element 12 may be destroyed, in the present embodiment, the discharge is performed along the route of the first thin film core 1-> bias conductor 3-> reproducing circuit, and the destruction of the MR element 12 can be prevented.
【００１７】バイアス導体３はＭＲ素子１２に比較し、
膜厚も厚く導体抵抗も低い事より静電気の放電電流の耐
量はＭＲ素子１２に比較しはるかに大きいため、このよ
うに高静電気耐量の薄膜磁気ヘッドを実現できる。The bias conductor 3 is different from the MR element 12 in that
Since the film thickness is large and the conductor resistance is low, the withstand voltage of the electrostatic discharge current is much larger than that of the MR element 12, so that a thin film magnetic head with such a high electrostatic voltage resistance can be realized.
【００１８】図２は本発明の他の実施例による薄膜磁気
ヘッドの断面図である。FIG. 2 is a sectional view of a thin film magnetic head according to another embodiment of the present invention.
【００１９】図２に示すように、本実施例の薄膜磁気ヘ
ッドは、バイアス導体４を第１の薄膜コア１の下部を通
って媒体対向面１０に露出するようにしている。As shown in FIG. 2, in the thin film magnetic head of this embodiment, the bias conductor 4 is exposed to the medium facing surface 10 through the lower portion of the first thin film core 1.
【００２０】本実施例の場合、静電気を放電させるルー
トは直接バイアス導体４から再生回路へ流れることにな
り、より高い静電気耐量の薄膜磁気ヘッドを提供でき
る。In the case of the present embodiment, the route for discharging static electricity directly flows from the bias conductor 4 to the reproducing circuit, so that it is possible to provide a thin film magnetic head having a higher electrostatic resistance.
【００２１】図３は本発明のさらに他の実施例による薄
膜磁気ヘッドの再生回路の概略回路図である。FIG. 3 is a schematic circuit diagram of a reproducing circuit of a thin film magnetic head according to still another embodiment of the present invention.
【００２２】図１及び図２に示した薄膜磁気ヘッドの実
施例によれば、ＭＲ素子１２の静電気破壊は防止できる
が、なおノイズとなる程度の静電気がＭＲ素子１２に流
れる可能性がある。According to the embodiments of the thin-film magnetic head shown in FIGS. 1 and 2, the MR element 12 can be prevented from being damaged by static electricity, but static electricity that may cause noise may flow to the MR element 12.
【００２３】そこで、これを防止するために、図３に示
すように、再生回路のバイアス回路部において、バイア
ス導体３及び４の少なくとも一端子を再生回路のＧＮＤ
に接続している。５はバイアス導体３，４に流れるバイ
アス電流を調整するためのボリュームである。Therefore, in order to prevent this, as shown in FIG. 3, in the bias circuit portion of the reproducing circuit, at least one terminal of the bias conductors 3 and 4 is connected to the GND of the reproducing circuit.
Connected to. Reference numeral 5 is a volume for adjusting the bias current flowing through the bias conductors 3 and 4.
【００２４】上記構造により、図１及び図２のそれぞれ
の実施例において、静電気の流れるルートは第１の薄膜
コア１→バイアス導体３→再生回路→ＧＮＤ及びバイア
ス導体４→再生回路→ＧＮＤとなり、静電気放電電流に
よるノイズがＭＲ素子１２の再生信号に乗らないように
できる。With the above structure, in each of the embodiments shown in FIGS. 1 and 2, the route of static electricity flow is as follows: the first thin film core 1 → bias conductor 3 → reproducing circuit → GND and bias conductor 4 → reproducing circuit → GND. It is possible to prevent noise due to the electrostatic discharge current from riding on the reproduction signal of the MR element 12.
【００２５】以上、図１乃至図３に示した本発明による
薄膜磁気ヘッドは、ＭＲ素子の静電気破壊を防止でき、
耐ノイズ性も向上できる上、従来の薄膜プロセスに比較
し、工程も大幅に増やすことなく、高信頼性の薄膜磁気
再生ヘッドを提供できる。As described above, the thin film magnetic head according to the present invention shown in FIGS. 1 to 3 can prevent electrostatic breakdown of the MR element,
It is possible to provide a highly reliable thin film magnetic reproducing head, which can improve noise resistance and does not significantly increase the number of steps as compared with the conventional thin film process.
【００２６】[0026]
【発明の効果】以上説明したように本発明によれば、ヘ
ッドギャップ部からの静電気によりＭＲ素子が破壊され
ることのない高静電気耐量、高信頼性の薄膜磁気ヘッド
を提供できる。As described above, according to the present invention, it is possible to provide a thin film magnetic head with high electrostatic resistance and high reliability, in which the MR element is not destroyed by static electricity from the head gap portion.
【図１】本発明の一実施例による薄膜磁気ヘッドの断面
図である。FIG. 1 is a sectional view of a thin film magnetic head according to an embodiment of the present invention.
【図２】本発明の他の実施例による薄膜磁気ヘッドの断
面図である。FIG. 2 is a sectional view of a thin film magnetic head according to another embodiment of the present invention.
【図３】本発明のさらに他の実施例による薄膜磁気ヘッ
ドの再生回路の概略回路図である。FIG. 3 is a schematic circuit diagram of a reproducing circuit of a thin film magnetic head according to still another embodiment of the present invention.
【図４】従来例による薄膜磁気ヘッドの断面図である。FIG. 4 is a sectional view of a conventional thin film magnetic head.
１ 第１の薄膜コア（上部コア） ２ 第２の薄膜コア（上部コア） ３，４ バイアス導体 １０ 記録媒体の対向面 １１ 磁気ギャップ １２ 磁気抵抗効果素子 １５ 下部コア（基板） １６ 絶縁層 DESCRIPTION OF SYMBOLS 1 1st thin film core (upper core) 2 2nd thin film core (upper core) 3,4 Bias conductor 10 Opposing surface of recording medium 11 Magnetic gap 12 Magnetoresistive effect element 15 Lower core (substrate) 16 Insulating layer
Claims (3)
と該第１の薄膜コアから離間配置される第２の薄膜コア
とからなる上部コアと、前記第１の薄膜コアより磁気ギ
ャップを介して配置される下部コアとを有し、 前記両コア間に絶縁部を介して配置される磁気抵抗効果
素子とバイアス導体とを設けてなるヨーク型の薄膜磁気
ヘッドにおいて、 前記第１の薄膜コア及び前記バイアス導体間の距離を前
記第１の薄膜コア及び前記磁気抵抗効果素子間の距離よ
りも小としてなることを特徴とする薄膜磁気ヘッド。1. An upper core composed of a first thin film core arranged on the recording medium side and a second thin film core arranged apart from the first thin film core, and a magnetic gap from the first thin film core. A yoke-type thin-film magnetic head having a lower core arranged via a magnetoresistive effect element and a bias conductor arranged between the cores via an insulating portion, A thin film magnetic head characterized in that the distance between the thin film core and the bias conductor is smaller than the distance between the first thin film core and the magnetoresistive effect element.
と該第１の薄膜コアから離間配置される第２の薄膜コア
とからなる上部コアと、前記第１の薄膜コアより磁気ギ
ャップを介して配置される下部コアとを有し、 前記両コア間に絶縁部を介して配置される磁気抵抗効果
素子とバイアス導体とを設けてなるヨーク型の薄膜磁気
ヘッドにおいて、 前記バイアス導体の一端を前記記録媒体の対向面に露出
させてなることを特徴とする薄膜磁気ヘッド。2. An upper core composed of a first thin film core arranged on the recording medium side and a second thin film core spaced apart from the first thin film core, and a magnetic gap from the first thin film core. And a lower core disposed via the magnetic field sensor, and a magnetoresistive effect element and a bias conductor disposed between the cores via an insulating portion. A thin-film magnetic head, one end of which is exposed on the facing surface of the recording medium.
してなることを特徴とする特許請求の範囲第１項または
第２項に記載の薄膜磁気ヘッド。3. The thin film magnetic head according to claim 1, wherein a part of the bias conductor is connected to GND.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31693092A JPH06162447A (en) | 1992-11-26 | 1992-11-26 | Thin film magnetic head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31693092A JPH06162447A (en) | 1992-11-26 | 1992-11-26 | Thin film magnetic head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06162447A true JPH06162447A (en) | 1994-06-10 |
Family
ID=18082513
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31693092A Pending JPH06162447A (en) | 1992-11-26 | 1992-11-26 | Thin film magnetic head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06162447A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5644454A (en) * | 1996-03-11 | 1997-07-01 | International Business Machines Corporation | Electrostatic discharge protection system for MR heads |
-
1992
- 1992-11-26 JP JP31693092A patent/JPH06162447A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5644454A (en) * | 1996-03-11 | 1997-07-01 | International Business Machines Corporation | Electrostatic discharge protection system for MR heads |
| US5710682A (en) * | 1996-03-11 | 1998-01-20 | International Business Machines Corporation | Electrostatic discharge protection system for MR heads |
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