JPH06146026A - Plasma treatment device - Google Patents

Abstract

PURPOSE:To provide the plasma treatment device which can clean the inside of a vacuum container efficiently and uniformly. CONSTITUTION:The plasma treatment device has a discharge tube 1 constituted by combining a guide-in window 3 for a microwave, a reaction chamber 2, a sample holder 11 where a sample 6 such as a substrate is mounted, a high-frequency power source 7 which applies a high-frequency electric field to the sample holder 11, a main magnetic coil 4, a control magnetic coil 5, a microwave divergence preventive cylinder 13 which prevents the microwave 3 from being diverged to specify the position of plasma generation by electron cyclotron resonance(ECR) excitation at a specific position, gas supply nozzle 8 and 9, and an exhaust opening 12, and the vacuum container consists of the discharge tube 1 and reaction chamber 2. Consequently, a surface where the electron cyclotron resonance excitation is caused can automatically be scanned in the vacuum container.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus using plasma by electron cyclotron resonance excitation, and more particularly to a plasma processing apparatus having a function of cleaning an inner wall of the apparatus.

[0002]

2. Description of the Related Art In a plasma processing apparatus used for manufacturing a semiconductor device, plasma products generated in various reaction processing steps adhere to the inner wall of a vacuum container.

For example, SiH ₄ gas and N ₂ gas or NH
_A silicon nitride film (S
When iN) is deposited, silicon nitride, which is a reaction product, or powdery silicon due to decomposition of excess SiH ₄ adheres to the inner wall of the reaction chamber. Further, a silicon oxide film is formed by CF4 gas plasma using a photoresist as a mask,
When the silicon nitride film is etched, the fluorocarbon ionized and decomposed from the gas bonds with the photoresist, and the organic resin film adheres to the inner wall of the vacuum container.

When the deposit adhered to the inner wall of the reaction chamber is peeled off in this manner, a rapid gas flow is generated in the reaction chamber, the processing conditions are changed, and the peeled deposit contaminates the sample. The problem arises.

Therefore, in such a plasma processing apparatus, a halogen-based gas is introduced to generate plasma to etch deposits, or oxygen plasma is used to regularly clean the reaction chamber.

[0006] By the way, in order to efficiently clean the deposit, it is necessary to generate plasma in the cleaning portion or to efficiently direct the ion flow toward the deposit. Therefore, in the conventional plasma processing apparatus, the following various innovations have been made.

For example, in Japanese Patent Laid-Open No. 63-111177, the position where the cyclotron resonance is generated is near the dielectric window, and the plasma generation position is adjusted by generating an oxidative or nitriding plasma to adjust the plasma generation position. A method for efficiently cleaning a desired position is described.

Further, in JP-A-1-231320, a conductive protective film capable of selectively applying a plurality of electric potentials is provided on the inner wall of the reaction chamber, and plasma is dispersed and projected on the inner wall of the reaction chamber to achieve cleaning efficiency. A method of increasing the value is described.

Further, in Japanese Patent Laid-Open No. 4-131379, the cleaning efficiency is improved by making the plasma diameter during the cleaning process larger than that during the sample processing so that the plasma end during the cleaning process reaches the inner wall of the vacuum container. How to raise is described.

[0010]

None of the above-mentioned conventional techniques is devised for efficiently and uniformly cleaning the inside of the vacuum container, and it is possible to efficiently and uniformly clean the inside of the vacuum container. There was a problem that I could not.

The present invention has been made in view of such circumstances, and an object thereof is to provide a plasma processing apparatus capable of efficiently and uniformly cleaning the inside of a vacuum container.

[0012]

A plasma processing apparatus according to the present invention utilizes electron cyclotron resonance excitation to generate a reactive gas plasma in a vacuum container for sample processing, and then a cleaning gas plasma in the vacuum container. In the plasma processing apparatus having the function of performing the cleaning process of the inner wall of the vacuum container by generating the above, a means for scanning the surface in which the electron cyclotron resonance excitation is generated in the vacuum container is characterized.

The plasma processing apparatus of the present invention utilizes electron cyclotron resonance excitation to generate a reactive gas plasma in a vacuum container for sample processing, and then a cleaning gas plasma in a vacuum container to generate a vacuum. In the plasma processing apparatus having the function of cleaning the inner wall of the container,
It is characterized in that it has a film thickness detecting means for detecting the film thickness of the plasma product on the inner wall of the vacuum container, and a control means for driving and controlling the scanning means based on the detection output of the film thickness detecting means.

Further, in the plasma processing apparatus of the present invention, the film thickness detecting means includes a light source, an optical system for guiding the light emitted from the light source to the inner wall of the vacuum container, and the irradiation position of the emitted light is the inner wall of the vacuum container. Optical system driving means for driving the optical system so as to be moved along, and reflected light detection means for detecting the intensity of the reflected light from the inner wall of the vacuum container of the irradiation light, the control means, It is characterized in that it is configured to include an optical system drive control means for controlling the optical system drive means.

The plasma processing apparatus of the present invention utilizes electron cyclotron resonance excitation to generate a reactive gas plasma in a vacuum container for sample processing, and then a cleaning gas plasma in a vacuum container to generate a vacuum. In the plasma processing apparatus having the function of cleaning the inner wall of the container,
It is characterized in that it has means for scanning the surface in which the electron cyclotron resonance excitation occurs in the vacuum container, and monitor means for analyzing and displaying the components of the plasma products on the inner wall of the vacuum container.

Further, the plasma processing apparatus of the present invention is characterized in that the monitor means has a spectroscopic means for analyzing plasma emission in the vacuum container and a display means for displaying a spectral output of the spectroscopic means as an image. .

Further, the plasma processing apparatus of the present invention utilizes electron cyclotron resonance excitation to generate a reactive gas plasma in a vacuum container for sample processing, and then to generate a cleaning gas plasma in the vacuum container to generate a vacuum. In the plasma processing apparatus having the function of cleaning the inner wall of the container,
Means for scanning the surface of the electron cyclotron resonance excitation in the vacuum container, component analysis means for analyzing the components of the plasma products on the inner wall of the vacuum container, and drive control of the scanning means based on the analysis output of the component analysis means. It has a control means to operate.

Further, the plasma processing apparatus of the present invention is characterized in that the component analyzing means includes a mass spectrometer for sucking gas species in the vacuum container and analyzing the gas species.

As described above, the present invention utilizes electron cyclotron resonance (ECR) excitation to generate reactive gas plasma in a vacuum container for sample processing, and to generate cleaning gas plasma in the vacuum container to generate a vacuum container. In a plasma processing apparatus having a function of performing a cleaning process on an inner wall, at the time of cleaning process, a cleaning end point detecting means is provided to match the detection limit,
The plasma is scanned in the vacuum container by automatically moving the surface that produces electron cyclotron resonance excitation (hereinafter referred to as the ECR surface), and the inner wall of the container is made uniform by causing the end of the plasma to reach the inner wall of the vacuum container. I am able to wash it.

[0020]

In the plasma processing apparatus having the above structure, the efficiency of incidence of plasma species on the deposits on the inner wall of the container is increased, so that efficient cleaning can be achieved. Further, by scanning the ECR surface of the cleaning gas plasma in the vacuum container, the incident position of the plasma species on the inner wall of the container changes continuously, so that the inner wall of the container can be cleaned efficiently and uniformly.

[0021]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows the configuration of an embodiment of the plasma processing apparatus according to the present invention. In the same drawing, the plasma processing apparatus comprises a discharge tube 1, a reaction chamber 2 and a microwave introducing window 3 combined together. , A sample holder 11 on which a sample 6 such as a substrate is placed, a high frequency power source 7 for applying a high frequency electric field to the sample holder 11, a main magnetic field coil 4, a control magnetic field coil 5, and a microwave 3 to prevent divergence of an electron cyclotron resonance ( EC
R) Microwave divergence prevention cylinder 13 for specifying the plasma generation position by excitation to a fixed position, gas supply nozzles 8, 9,
And the exhaust port 12, and the discharge tube 1 and the reaction chamber 2 constitute a vacuum container.

In this embodiment, the laser oscillator 22 and the signal processing section 30 are arranged so that the film thickness of the deposit on the inner wall of the vacuum container can be measured.
It is characterized in that a control unit 20 including is provided.

FIG. 2 shows a specific configuration of the control unit 20. In the figure, the control unit 20 includes a laser oscillator 22.
A reflection mirror and a reflection mirror driving unit 23, the emitted light of the laser oscillator 22 from a detector 24, a signal processing unit 30,
It is composed of a main magnetic field coil 4 and a coil power supply unit 31 which supplies power to the control magnetic field coil.

Further, the signal processing unit 30 includes a deposit film thickness monitoring unit 25, a coil current adjustment / reflection mirror drive determination unit 26, a reference value storage unit 27, and a coil current control unit 28.
And a reflection mirror drive controller 29.

In the above structure, the light emitted from the laser oscillator 22 is radiated to the inner wall of the vacuum chamber in which plasma is generated by the electron cyclotron resonance (ECR) excitation through the reflection mirror, the reflection mirror drive unit 23, and the observation window 16. It The reflected light from the inner wall of the vacuum container is incident on the detector 24 through the observation window 16 and photoelectrically converted by the detector 24. The detection output of the detector 24 is sent to the deposit film thickness monitor unit 25.

The deposit film thickness monitor unit 25 has a detector 24.
The film thickness adhered to the inner wall of the vacuum container is measured based on the detection output of the above, and the measured value is output to the coil current adjustment and reflection mirror drive determination unit 26. The coil current adjustment and reflection mirror drive determination unit 26 is set in advance and the reference value storage unit 21.
The reference signal stored in the monitor and the deposit film thickness monitor unit 2
It is determined whether or not the detection location on the inner wall of the vacuum container is contaminated more than a predetermined value by comparing the output signal sent from the device 5. As a result of comparison, when the strength of the output signal of the deposit film thickness monitor unit 25 is equal to or lower than the reference value, that is, when the inner wall of the vacuum container is contaminated above the reference, a signal indicating the state is sent to the coil current control unit. To 28. Coil current control unit 2
When the cleaning process at that time is completed, 8 sequentially moves the ECR surface of the plasma generated in the vacuum container,
The coil power supply unit 31 is controlled so that a current is supplied from the coil power supply unit 31 to each coil for scanning along the inner wall surface of the vacuum container.

When the cleaning process at that time is completed, the coil current control unit 28 sends a signal to the reflection mirror drive control unit 29, and the reflection mirror and reflection mirror drive unit 23 provided with the reflection mirror. Is operated to change the direction of the reflection mirror and change the irradiation position of the light emitted from the laser oscillator 22 on the inner wall surface of the vacuum container.

The coil current adjustment and comparison method in the reflection mirror drive determination section 26 will be described in detail with reference to FIGS. 3 (a) and 3 (b). The detection signal detected by the detector 24 when the inner wall of the vacuum container is not contaminated is shown in FIG.
As shown in (a), it is obtained as an attenuation curve A whose amplitude attenuates with the passage of time. Even when the inner wall of the vacuum container is contaminated, as shown in FIG. 3 (b), the amplitude is obtained as an attenuation curve B that attenuates with time.

However, in the attenuation curves A and B, the initial amplitudes X and Y indicating the intensity of the detection signal are greatly different. That is, the initial amplitude Y when the inner wall of the vacuum container is contaminated is smaller than the amplitude X when it is clean. The initial amplitude Y decreases as the degree of contamination on the inner wall of the vacuum container increases. Therefore, if the initial amplitude when the inner wall of the vacuum container is contaminated is smaller than the initial amplitude X when the inner wall material of the vacuum container is not contaminated, the reference value T is stored in the reference value storage unit 27. The reference value T and the detection signal from the deposit film thickness monitor unit 25 are compared by the coil current adjustment and reflection mirror drive determination unit 26 to determine when the ECR surface position is moved. That is, when the initial amplitude Y of the attenuation curve B, which is the detection signal, becomes smaller than the reference value T, the ECR surface is scanned on the other part of the inner wall of the vacuum container to efficiently clean the inner wall of the vacuum container. Since the ECR surface at the cleaning start point is set under the main magnetic field coil 4 and the position of the ECR surface at the cleaning end point is set under the control magnetic field coil 5, 1c is set between them.
It is designed to scan at m intervals.

Further, the reflecting mirror and the reflecting mirror driving unit 23 are also configured to move in accordance with this interval.

In the plasma processing apparatus having the above-mentioned structure, an ECR state is caused by the electric field by the microwave 3 of 2.45 GHz and the electric field of 875 Gauss or more by the magnetic field coils 4 and 5 at the time of processing the sample, and the cylindrical type is formed in the reaction chamber 2. The reactive gas plasma 14 was generated to form a film.

First, a method of forming a silicon nitride film on the substrate 6 will be described.

From each of the gas nozzles 8 and 9, 240 ml / min of N ₂ gas and 24 ml / min of SiH ₄ are supplied.
The pressure inside the vacuum container was adjusted to 0.3 Pa by introducing the respective components and adjusting the exhaust amount.

On the other hand, by introducing the microwave 3 having an output of 600 W and adjusting the currents to the main magnetic field coil 4 and the control magnetic field coil 5, the ECR surface 19 having a magnetic flux density of 875 Gauss.
Are generated in the microwave divergence prevention cylinder 13. A high frequency electric field with an output of 100 W is applied to the sample holder 11 by the high frequency power supply 7.

As a result, a cylindrical ECR plasma 14 in which the direction of the lines of magnetic force was substantially perpendicular to the substrate 6 was generated, and a SiN film having a thickness of 350 nm was formed on the surface of the substrate 6 in 60 seconds.

The following four points in the vacuum container at this time (a. On the sample holder 11, b. Near the SiH ₄ inlet,
c, d. The adhesion amount on the inner wall of the vacuum container is as follows. a. 340 nm b. 225 nm c. 65 nm d. 52 nm As described above, when the SiN film is deposited to a thickness of 350 nm on the substrate 6, the SiN film may adhere to any of the positions a to d even though the plasma has a cylindrical shape with the substrate as the bottom surface. Recognize.

After depositing the SiN film in this way, in this embodiment, 100 m of C ₂ F ₆ gas was used as a cleaning gas.
In the case where 1 / min is introduced from the gas nozzle 8 and the ECR surfaces of the generated plasma are set to the following three types, the cleaning rates at the above four points a to d will be described.

(A) When the same cylindrical plasma 14 as that during film formation is generated.

(B) Main magnetic field coil 4 and control magnetic field coil 5
When the electric current is adjusted to generate divergent plasma 15 whose plasma end reaches the inner wall of the vacuum container. At this time, the ECR surface is located 3 cm above the substrate.

(C) When the divergent plasma 15 whose plasma end reaches the inner wall of the vacuum container is generated and the ECR surface is scanned on the inner wall of the vacuum container using the signal processing unit 30 described above. At this time, the ECR surface varies from the substrate surface to 3 cm above the substrate.

The plasma generation condition at this time is C ₂ F ₆
The flow rate is 150 ml / min, the microwave intensity is 600 W, and the reaction pressure is 1 Pa. The experimental results are shown in Table 1.

[0042]

[Table 1]

As is clear from Table 1, the container inner wall portion c,
The cleaning speed of d is 80 to 95 when the ECR surface is fixed.
When the ECR surface is varied with respect to ml / min, it becomes 160 to 180 ml / min. Especially, when the ECR surface is scanned at the inner wall sides c and d of the vacuum container, the ECR surface is compared to when it is fixed. It was confirmed that the cleaning rate reached about twice.

That is, as in this embodiment, the EC during the cleaning process is
By scanning the R surface onto the inner wall of the vacuum container, the ECR surface with high cleaning gas plasma density can directly reach the inner wall of the vacuum container, and the efficiency of incidence of plasma species on the deposits can be increased, thereby significantly improving the cleaning speed. it can. In other words, it is found that it is effective to increase the amount of incident ions on the deposit when cleaning the oxide film.

Next, the configuration of another embodiment of the plasma processing apparatus according to the present invention is shown in FIG. In FIG. 4A, a sample holder 11 for mounting a sample 6 such as a discharge tube 1, a reaction chamber 2 and a substrate, which is configured by combining a microwave introduction window 3.
A high frequency power source 7 for applying a high frequency electric field to the sample holder 11,
Main magnetic field coil 4, control magnetic field coil 5, microwave divergence prevention cylinder 13 that prevents divergence of microwave 3 and specifies a plasma generation position by electron cyclotron resonance (ECR) excitation at a fixed position, gas supply nozzles 8 and 9 , And the exhaust port 12, and the discharge tube 1 and the reaction chamber 2 constitute a vacuum container.

Further, the vacuum vessel is provided with a plasma light extraction window 32 made of quartz glass as an observation window.
A control unit 45 is provided outside the plasma light extraction window 32. The configuration of the control unit 45 is shown in FIG.

The plasma light generated from the reaction chamber passes through the plasma light extraction window 32, and the first lens 3 shown in FIG.
A parallel light beam is formed by 4 and is condensed on the end face of the optical fiber 36 by the second lens 35. In this embodiment, the focal lengths of the first and second lenses are 31 cm and 4 cm, respectively, and the diameters thereof are 4 cm. The light collected on the slit of the spectroscope 37 is separated by the spectroscope 37, and its spectroscopic output is OMD (Optical Multichannel).
Detector 38, and the detected data is processed by computer 40 to perform emission analysis, and the analysis result is output to CRT 41 or plotter 42.

First, from each of the gas nozzles 8 and 9, 12.5 ml / min of SiH ₄ and 5 m of Ne gas were supplied.
It was introduced at a rate of 1 / min, and the a-Si film was deposited on the substrate 6 under the other conditions in the same manner as in the above-described example.

On the other hand, when cleaning, S is used as a cleaning gas.
F ₆ gas 50 ml / min was introduced from the gas nozzle 8,
While monitoring the emission spectrum, the main magnetic field coil 4 and the control magnetic field coil 5 were controlled to cause the ECR surface to scan the inner wall of the vacuum container and clean with SF ₆ plasma.

The emission spectrum at the time of washing shows 205.7.
nm (Si), 251.6 nm (Si), 288.1n
m (Si), 436.8 nm (SiF), 440 nm
Peaks related to Si such as (SiF) and 442.5 nm (Si) appear. Especially 436.8 to 442.5 nm
Since the peak of the other region has weak intensity of other atomic spectra in the vicinity thereof, the a-Si attached to the inner wall of the vacuum container is weak.
Suitable for cleaning, 436.8nm (SiF), 4
40 nm (SiF) and 442.5 nm (Si) were used as monitor peaks.

Since the divergent plasma of SF ₆ flows to the inner wall of the vacuum vessel along the ECR surface 27, as shown in FIG. The cleaning speed drops sharply below the surface.

Therefore, in the present embodiment, the main magnetic field coil 4 and the control magnetic field coil 5 are continuously controlled to scan the ECR surface 27 between the main magnetic field coil 4 and the control magnetic field coil 5 in the vertical direction in the figure. I decided to do it.

FIG. 5 is a diagram showing the amount of residual a-Si adhered when cleaning is performed with the position of the ECR surface 27 fixed (solid line) and when cleaning is performed by scanning the position of the ECR surface 27 (dotted line). Is. As is clear from the figure, if the position of the ECR surface is scanned, the incident position of the plasma species on the adhered substance changes continuously, so that the inner wall of the container can be uniformly cleaned.

The apparatus of the embodiment shown in FIG. 4 has an advantage that the observation window can be smaller than that of the apparatus of the embodiment shown in FIG.

Next, the configuration of another embodiment of the present invention is shown in FIG. In the figure, a discharge tube 1 constituted by combining microwave introduction windows 3, a reaction chamber 2, a sample holder 11 on which a sample 6 such as a substrate is placed, a high frequency power source 7 for applying a high frequency electric field to the sample holder 11, Main magnetic field coil 4, control magnetic field coil 5, microwave divergence prevention cylinder 13 that prevents divergence of microwave 3 and specifies a plasma generation position by electron cyclotron resonance (ECR) excitation at a fixed position, gas supply nozzles 8 and 9 , And the exhaust port 12, and the discharge tube 1 and the reaction chamber 2 constitute a vacuum container. Further, in the present embodiment, a quadrupole analysis tube 50 is provided in the reaction chamber 2.

FIG. 9 shows the configuration of the control unit 60 including the signal processing unit 33 for processing the output signal of the quadrupole analysis tube 50. The control unit 60 includes a signal processing unit 51 and a coil power supply unit 31.

Further, the signal processing section 51 includes a mass spectrum peak monitoring section 52, a coil current adjustment judging section 54,
It is composed of a reference value storage unit 53 and a coil current control unit 55.

In the above configuration, the detection signal from the quadrupole analysis tube 50 is first of all a mass spectrum peak monitor section 52.
Sent to. After depositing a SiO ₂ film to be described later on the substrate 6, CF ₄ + O ₂ is introduced into the reaction chamber 2 as a cleaning gas,
When cleaning SiO ₂ deposits, the mass spectrum is S
peak related to i Si (28), SiF (47) Si
The peak strength of F ₂ (66) and SiF ₃ (85) increases. In particular, peak of SiF ₃ (85) - because the intensity variation of the click increases, peak of SiF ₃ (85) - was used click as a detection signal. The mass spectrum peak monitor unit 52 measures the cleaning state of the inner wall of the vacuum container based on the sent detection signal, and sends the measured value to the coil current adjustment determination unit 54.

The coil current control unit 55 compares the reference signal preset and stored in the reference value storage unit 53 with the detection signal sent from the mass spectrum peak monitor unit 52 so that the inner wall of the vacuum container is determined. Determine whether it is contaminated more than a predetermined amount. As a result of comparison, if the intensity of the detection signal of the mass spectrum peak monitor unit 52 is equal to or lower than the reference value, that is, if the inner wall of the vacuum container is contaminated above the reference value, a signal indicating that state is sent to the coil current control unit 55. . The coil current control unit 55 moves the ECR surface to the next position on the inner wall of the vacuum container when the cleaning process at that time is completed. Since the position of the ECR surface at the cleaning start point is set under the main magnetic field coil 4 and the position of the ECR surface at the cleaning end point is set under the control magnetic field coil 5, scanning is performed at 1 cm intervals between them. did.

A cleaning method after forming the SiO ₂ film on the substrate 6 in the above structure will be described.

First, from each of the gas nozzles 8 and 9, 240 ml / min of O ₂ gas and 24 ml of SiH ₄ were introduced.
/ Min, and cylindrical plasma having the size of the substrate as the bottom is generated in the same manner as described above to form SiO 2 on the substrate 6.
_Two films were deposited.

On the other hand, at the time of cleaning, 1 is used as the cleaning gas.
Introducing 00 ml / min of CF ₄ and 10 ml / min of O ₂ into the reaction chamber 2 and controlling the main magnetic field coil 4 and the control magnetic field coil 5 to fix the ECR surface and to scan the ECR surface The cleaning effect of SiO ₂ deposits on the inner wall of the vacuum container was investigated.

FIG. 8 shows the amount of SiO ₂ adhering to the inner wall of the vacuum container when cleaning was performed with the position of the ECR surface 27 fixed (solid line) and when cleaning was performed by scanning the position of the ECR surface 27 (dotted line). It is a figure. As is clear from the figure, if the position of the ECR surface is scanned, the incident position of the plasma species on the deposit changes continuously, so that the inner wall of the vacuum container can be uniformly cleaned.

The plasma monitor system may be a crystal oscillator, a particle monitor, or a probe method other than the emission spectrum optical system. Also, by placing the above-mentioned plasma monitor-system sensor unit in a storage container having a valve that can be vacuum-separated from the vacuum container, if a failure occurs in the monitor-system sensor unit, it can be easily replaced during sample processing. As a result, sample processing can be speeded up.

[0065]

As described above, according to the present invention,
Utilizing electron cyclotron resonance excitation, a reactive gas plasma is generated in the vacuum container to perform sample processing, and then a cleaning gas plasma is generated in the vacuum container to perform cleaning processing on the inner wall of the vacuum container,
Since the surface that causes electron cyclotron resonance excitation is automatically scanned in the vacuum container, the inside of the vacuum container can be efficiently and uniformly cleaned.

[Brief description of drawings]

FIG. 1 is a configuration diagram showing an embodiment of a plasma processing apparatus according to the present invention.

FIG. 2 is a block diagram showing a specific configuration of a control unit in FIG.

FIG. 3 is an explanatory diagram showing a detection output of the detector in FIG.

FIG. 4 is a configuration diagram showing another embodiment of the plasma processing apparatus according to the present invention.

5 is a characteristic diagram for explaining a cleaning effect when the inside of the vacuum container is cleaned by the plasma processing apparatus shown in FIG.

6 is a block diagram showing a specific configuration of a control unit in FIG.

FIG. 7 is a configuration diagram showing still another embodiment of the plasma processing apparatus according to the present invention.

8 is a characteristic diagram for explaining a cleaning effect when the inside of the vacuum container is cleaned by the plasma processing apparatus shown in FIG.

9 is a block diagram showing a specific configuration of a control unit in FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Discharge tube 2 Reaction chamber 3 Microwave introduction window 4 Main magnetic field coil 5 Control magnetic field coil 6 Sample 7 High frequency power supply 8 Gas supply nozzle 9 Gas supply nozzle 11 Sample holder 12 Exhaust port 13 Microwave divergence prevention cylinder 20 Control unit 22 Laser oscillator 23 Reflection Mirror and Reflection Mirror Drive Unit 24 Detector 25 Adhesion Film Thickness Monitor Unit 26 Coil Current Adjustment and Reflection Mirror Drive Judgment Unit 27 Reference Value Storage Unit 28 Coil Current Control Unit 29 Reflection Mirror Drive Control Unit 30 Signal Processing Unit 31 Coil Power supply part

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Internal reference number FI Technical indication H01L 21/302 B 9277-4M 21/31 C

Claims (7)

[Claims] 1. Utilizing electron cyclotron resonance excitation,
Electron cyclotron resonance excitation in a plasma processing device that has the function of generating reactive gas plasma in the vacuum container to perform sample processing, and then generating cleaning gas plasma in the vacuum container to clean the inner wall of the vacuum container A plasma processing apparatus comprising means for scanning a surface in which a vacuum occurs in a vacuum container. 2. A film thickness detecting means for detecting the film thickness of the plasma product on the inner wall of the vacuum container, and a control means for driving and controlling the scanning means based on the detection output of the film thickness detecting means. The plasma processing apparatus according to claim 1. 3. The film thickness detecting means, a light source, an optical system for guiding light emitted from the light source to the inner wall of the vacuum container, and an irradiation position of the emitted light moved along the inner wall of the vacuum container. The optical system drive means for driving the optical system and the reflected light detection means for detecting the intensity of the reflected light from the inner wall of the vacuum container of the irradiation light are provided, and the control means controls the optical system drive means. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus includes an optical system drive control means. 4. Utilizing electron cyclotron resonance excitation,
Electron cyclotron resonance excitation in a plasma processing device that has the function of generating reactive gas plasma in the vacuum container to perform sample processing, and then generating cleaning gas plasma in the vacuum container to clean the inner wall of the vacuum container 2. A plasma processing apparatus comprising: a means for scanning a surface of the inside of the vacuum container for scanning, and a monitor means for analyzing and displaying components of plasma products on the inner wall of the vacuum container. 5. The plasma according to claim 3, wherein the monitor means has a spectroscopic means for analyzing plasma emission in the vacuum container and a display means for displaying a spectral output of the spectroscopic means as an image. Processing equipment. 6. Utilizing electron cyclotron resonance excitation,
Electron cyclotron resonance excitation in a plasma processing device that has the function of generating reactive gas plasma in the vacuum container to perform sample processing, and then generating cleaning gas plasma in the vacuum container to clean the inner wall of the vacuum container Means for scanning the surface in which the gas is generated in the vacuum vessel, component analysis means for analyzing the components of the plasma product on the inner wall of the vacuum vessel, and control means for driving and controlling the scanning means based on the analysis output of the component analysis means. A plasma processing apparatus comprising: 7. The plasma processing apparatus according to claim 5, wherein the component analyzing unit is configured to include a mass spectrometer that sucks gas species in the vacuum container and analyzes the gas species.