JPH06139580A - Optical disk device and method for suppressing change of semiconductor laser emission power - Google Patents

Optical disk device and method for suppressing change of semiconductor laser emission power

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Publication number
JPH06139580A
JPH06139580A JP4284604A JP28460492A JPH06139580A JP H06139580 A JPH06139580 A JP H06139580A JP 4284604 A JP4284604 A JP 4284604A JP 28460492 A JP28460492 A JP 28460492A JP H06139580 A JPH06139580 A JP H06139580A
Authority
JP
Japan
Prior art keywords
semiconductor laser
high frequency
current
power
reproduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4284604A
Other languages
Japanese (ja)
Inventor
Osamu Inoue
修 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP4284604A priority Critical patent/JPH06139580A/en
Publication of JPH06139580A publication Critical patent/JPH06139580A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To suppress the fluctuation in reproducing power by detecting the fluctuational characteristic in the reproducing power at the time of switching on/off of superposition of high frequency current to the drive current of a semiconductor laser and correcting the drive current. CONSTITUTION:A high frequency current superposition module 22 is turned on by a control signal from a CPU 23, and the reproducing power from the semiconductor laser 11 is controlled by a reproducing power control part 21. In such a state, by a detection amplifier 20, the output current of a light emitting power detecting photodetcter 14 is detected, and is sampled by a peak detection part 27 and sent to the CPU 23. By a comparator 29, a comprison output between the output signal voltage of the amplifier 20 and a prescribed voltage of a reference voltage setting part 28 is sent to the CPU 23. By the CPU 23, a time from when a module 22 is turned on to when the output signal of the comparator 29 becomes '1' is measured, and a current value with a characteristic opposite to the fluctuation characteristic of the reproducing power is set to an addition current generation part 30, and is added to the drive current of the laser 11 by an adder part 31. Thus, the fluctuation in the reproducing power is suppressed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光ディスク装置及び半導
体レーザ発光パワー変化抑制方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical disk device and a semiconductor laser emission power change suppressing method.

【0002】[0002]

【従来の技術】光学第14巻第5号(1985年10
月)第377〜384頁「高周波電流重畳法による半導
体レーザ搭載ビデオディスクプレーヤのレーザーノイズ
低減化」に記載されているように、光ディスク装置にお
いては、半導体レーザを駆動して光ディスクに光を照射
した場合その光ディスクから半導体レーザに戻る光の影
響を少なくするために、光ディスクからデータを読み出
す時に半導体レーザの駆動電流に高周波電流を重畳する
方法が従来より行われている。
2. Description of the Related Art Optics Vol. 14, No. 5 (October 1985)
Mon.) pp. 377-384, "Reduction of laser noise in semiconductor laser-equipped video disc player by high-frequency current superposition method". In this case, in order to reduce the influence of light returning from the optical disk to the semiconductor laser, a method of superposing a high frequency current on the drive current of the semiconductor laser when reading data from the optical disk has been conventionally performed.

【0003】しかし、この方法では、光ディスク装置
において、半導体レーザの駆動電流に高周波電流を重畳
している状態で半導体レーザの発光パワーを再生パワー
から記録パワー又は消去パワーに上げると、半導体レー
ザの発光パワーが定格を越える可能性があり、半導体レ
ーザの寿命が短くなって最悪の場合には半導体レーザの
破壊に至る。そこで、光ディスク装置において、半導体
レーザの駆動電流に対する高周波電流の重畳を高周波電
流重畳モジュールにより再生時と記録時とでオン/オフ
制御する方法が行われている。
However, according to this method, when the emission power of the semiconductor laser is increased from the reproduction power to the recording power or the erasing power in a state where the high frequency current is superposed on the drive current of the semiconductor laser in the optical disk device, the emission of the semiconductor laser is emitted. The power may exceed the rating, the life of the semiconductor laser may be shortened, and in the worst case, the semiconductor laser may be destroyed. Therefore, in an optical disk device, a method of controlling on / off of superimposing a high frequency current on a driving current of a semiconductor laser by a high frequency current superimposing module at the time of reproduction and recording is used.

【0004】[0004]

【発明が解決しようとする課題】上記方法では、半導
体レーザの駆動電流に対する高周波電流の重畳を高周波
電流重畳モジュールにより再生時と記録時とでオン/オ
フ制御するので、以下のような問題が生ずる。図2の左
側部分は半導体レーザの高周波電流重畳オン/オフ時に
おけるIーL特性(駆動電流Iと発光パワーPとの関
係)を示す。
In the above method, the superposition of the high frequency current with respect to the drive current of the semiconductor laser is controlled by the high frequency current superposition module during on / off control during reproduction and recording, so that the following problems occur. . The left part of FIG. 2 shows the IL characteristic (relationship between the drive current I and the emission power P) when the semiconductor laser is turned on / off with the high frequency current superimposed.

【0005】この図2において、半導体レーザの発光パ
ワーは半導体レーザ駆動電流に対して高周波電流重畳が
オンして再生パワー制御系により再生パワーPrに制御
されている状態が点Aである。この状態で高周波電流重
畳をオフすると、点Bの状態に遷移する。点Bから点C
への遷移は高周波電流重畳オフ状態で再生パワー制御系
による再生パワー制御がかかることに因る。点Cから点
Dへの遷移は高周波電流重畳をオンすることに因る。点
Dから点Aへの遷移は高周波電流重畳オン状態で再生パ
ワー制御系による再生パワー制御がかかることに因る。
In FIG. 2, point A is the state where the emission power of the semiconductor laser is controlled to the reproduction power Pr by the reproduction power control system when the high frequency current superposition is turned on with respect to the semiconductor laser drive current. When the high frequency current superposition is turned off in this state, the state changes to point B. Point B to point C
The transition to is due to the reproduction power control being applied by the reproduction power control system in the high frequency current superposition off state. The transition from point C to point D is due to turning on the high frequency current superposition. The transition from point D to point A is due to the reproduction power control being applied by the reproduction power control system in the high frequency current superposition ON state.

【0006】一般に高周波電流重畳オン/オフ時間(点
Aから点Bへの遷移,点Dから点Aへの遷移)は高周波
電流重畳モジュールの特性により数μsかかる。本来は
この時間の間の再生パワーPr変動を再生パワー制御系
により制御することが理想的であるが、そのための制御
帯域は数MHZ以上必要となり、ノイズに対して弱くて
発振し易い等により実現性が乏しくなり、またコスト的
にも高くなる。
Generally, the high frequency current superposition on / off time (transition from point A to point B, transition from point D to point A) takes several μs depending on the characteristics of the high frequency current superposition module. Originally, it is ideal that the reproduction power Pr fluctuation during this time is controlled by the reproduction power control system, but a control band for this is required to be several MHZ or more, which is weak against noise and easy to oscillate. The cost is high and the cost is high.

【0007】そこで、再生パワー制御系の帯域を下げる
ことが考えられるが、このようにすれば、例えば再生モ
ードから記録モードに変化する時に光ディスク上の書き
込みセクタ(ターゲットセクタ)の直前で高周波電流重
畳をオフすると、再生パワーPrの低下により光ディス
ク上のSM(セクタマーク)が読み出せなくなり、光デ
ィスク上の記録データの信頼性が低下する。一方、記録
モードから再生モードに変化する時に図3に示すように
重畳制御信号により高周波電流重畳モジュールで高周波
電流重畳をオンすると、再生パワーPrが上昇して最悪
の場合光ディスク上の記録データの破壊が生ずる可能性
がある。
Therefore, it is conceivable to lower the band of the reproduction power control system, but if this is done, for example, when the reproduction mode is changed to the recording mode, the high frequency current superimposition is performed immediately before the write sector (target sector) on the optical disk. When is turned off, the SM (sector mark) on the optical disc cannot be read because the reproduction power Pr is reduced, and the reliability of the recorded data on the optical disc is reduced. On the other hand, when the high frequency current superposition module is turned on by the superposition control signal as shown in FIG. 3 when the recording mode is changed to the reproduction mode, the reproduction power Pr increases and in the worst case, the recorded data on the optical disk is destroyed. May occur.

【0008】本発明は、上記欠点を改善し、再生パワー
制御系の帯域が低い場合にも高周波電流重畳のオン/オ
フによる再生パワーの変動を抑制することができる光デ
ィスク装置及び半導体レーザ発光パワー変化抑制方法を
提供することを目的とする。
The present invention solves the above-mentioned drawbacks, and can suppress the fluctuation of the reproducing power due to ON / OFF of the high frequency current superposition even when the band of the reproducing power control system is low, and the semiconductor laser emission power change. The purpose is to provide a suppression method.

【0009】[0009]

【課題を解決するための手段】上記目的を達成するた
め、請求項1記載の発明は、半導体レーザからの光を対
物レンズにより記録媒体上に集光して情報の記録及び再
生を行い、情報の再生時と情報の記録時とで前記半導体
レーザの駆動電流への高周波電流重畳のオン/オフを切
換える光ディスク装置において、前記高周波電流重畳を
オン状態からオフ状態へ又は/及びオフ状態からオン状
態へ切換える際の再生パワー変動特性を検出する検出手
段と、この検出手段で検出した再生パワー変動特性によ
り再生パワーの変動を抑制する再生パワー変動抑制手段
とを備えたものである。
In order to achieve the above object, the invention according to claim 1 condenses light from a semiconductor laser on a recording medium by an objective lens to record and reproduce information, In an optical disk device for switching on / off of high frequency current superimposition on the drive current of the semiconductor laser during reproduction of information and during recording of information, the high frequency current superimposition is switched from an on state to an off state and / or from an off state to an on state. It is provided with a detecting means for detecting a reproducing power fluctuation characteristic at the time of switching to and a reproducing power fluctuation suppressing means for suppressing a reproducing power fluctuation by the reproducing power fluctuation characteristic detected by the detecting means.

【0010】請求項2記載の発明は、請求項1記載の光
ディスク装置において、該光ディスク装置内の温度変化
を検出する検出手段を有し、この検出手段の出力信号に
応じて前記再生パワー変動の抑制動作を行うものであ
る。
According to a second aspect of the present invention, in the optical disc apparatus according to the first aspect, there is provided a detecting means for detecting a temperature change in the optical disc apparatus, and the reproducing power fluctuation of the reproducing power is detected according to an output signal of the detecting means. The suppression operation is performed.

【0011】請求項3記載の発明は、半導体レーザから
の光を対物レンズにより記録媒体上に集光して情報の記
録及び再生を行い、情報の再生時と情報の記録時とで前
記半導体レーザの駆動電流への高周波電流重畳のオン/
オフを切換える光ディスク装置の半導体レーザ発光パワ
ー変化抑制方法であって、前記半導体レーザの発光パワ
ーを検出してこの発光パワーの変化の特性を検出し、こ
の特性により前記半導体レーザの発光パワーの変化を補
正するように前記半導体レーザの駆動電流に所定の電流
を加算する。
According to a third aspect of the present invention, light from a semiconductor laser is focused on a recording medium by an objective lens to record and reproduce information, and the semiconductor laser is used at the time of reproducing information and at the time of recording information. ON / OFF of high frequency current superposition on the drive current of
A method for suppressing change in semiconductor laser emission power of an optical disk device for switching off, wherein the emission power of the semiconductor laser is detected to detect the characteristic of the change in emission power, and the change in emission power of the semiconductor laser is detected by this characteristic. A predetermined current is added to the drive current of the semiconductor laser so as to correct it.

【0012】[0012]

【作用】請求項1記載の発明では、高周波電流重畳をオ
ン状態からオフ状態へ又は/及びオフ状態からオン状態
へ切換える際の再生パワー変動特性が検出手段により検
出され、この検出手段で検出した再生パワー変動特性に
より再生パワー変動抑制手段が再生パワーの変動を抑制
する。
According to the present invention, the reproducing power fluctuation characteristic when the high frequency current superposition is switched from the on state to the off state and / or from the off state to the on state is detected by the detecting means, and is detected by the detecting means. The reproducing power fluctuation suppressing unit suppresses the fluctuation of the reproducing power due to the reproducing power fluctuation characteristic.

【0013】請求項2記載の発明では、光ディスク装置
内の温度変化が検出手段により検出され、この検出手段
の出力信号に応じて再生パワー変動の抑制動作が行われ
る。
According to the second aspect of the invention, the temperature change in the optical disk device is detected by the detecting means, and the reproducing power fluctuation suppressing operation is performed according to the output signal of the detecting means.

【0014】[0014]

【実施例】図1は本発明の一実施例を示す。この実施例
の光ディスク装置では、再生時には半導体レーザ11が
半導体レーザ駆動部12により駆動されてDC点灯し、
半導体レーザ11から出射された光の一部がビームスプ
リッタ13により発光パワー検出用受光素子14に入力
されて発光パワー検出用受光素子14で電流に変換され
ることにより半導体レーザ11の発光パワーが検出され
る。
FIG. 1 shows an embodiment of the present invention. In the optical disk device of this embodiment, the semiconductor laser 11 is driven by the semiconductor laser driving section 12 to be DC-lighted during reproduction,
A part of the light emitted from the semiconductor laser 11 is input to the light-emission power detection light-receiving element 14 by the beam splitter 13 and converted into a current by the light-emission power detection light-receiving element 14, whereby the light-emission power of the semiconductor laser 11 is detected. To be done.

【0015】半導体レーザ11から出射された光の残り
の一部はプリズム15を介して対物レンズ16により光
ディスクの記録媒体17上に集光され、この記録媒体1
7はモータにより回転駆動される。記録媒体17からの
反射光は再び対物レンズ16及びプリズム15を介して
ビームスプリッタ13により再生信号検出用受光素子1
8に導かれて再生信号検出用受光素子18で電流に変換
されることにより再生信号が検出される。この再生信号
検出用受光素子18の出力電流は検出アンプ19により
電流ー電圧変換されて信号処理系に送られる。
The remaining part of the light emitted from the semiconductor laser 11 is condensed on the recording medium 17 of the optical disk by the objective lens 16 via the prism 15, and this recording medium 1
7 is rotationally driven by a motor. The reflected light from the recording medium 17 is again passed through the objective lens 16 and the prism 15 by the beam splitter 13 to detect the reproduction signal.
The reproduction signal is detected by being guided to the laser beam 8 and converted into a current by the reproduction signal detecting light receiving element 18. The output current of the reproduction signal detecting light receiving element 18 is current-voltage converted by the detection amplifier 19 and sent to the signal processing system.

【0016】発光パワー検出用受光素子14の出力電流
は検出アンプ20により電流ー電圧変換され、再生パワ
ー制御部21に送られる。再生パワー制御部21は検出
アンプ20の出力電圧を基準電圧と比較し、半導体レー
ザ11の再生パワーが一定となるような再生パワー制御
信号を半導体レーザ駆動部12に送る。半導体レーザ駆
動部12は再生パワー制御部21からの再生パワー制御
信号により制御され、半導体レーザ11の再生パワーが
一定値に制御される。このとき、高周波電流重畳モジュ
ール22はマイクロコンピュータ(CPU)23からの
制御信号によりオン状態となっており、高周波電流をコ
ンデンサ24を介して出力して半導体レーザ11の駆動
電流に重畳する。
The output current of the light-receiving element 14 for detecting the emission power is converted into a current-voltage by the detection amplifier 20 and sent to the reproduction power controller 21. The reproduction power control unit 21 compares the output voltage of the detection amplifier 20 with the reference voltage and sends a reproduction power control signal to the semiconductor laser drive unit 12 so that the reproduction power of the semiconductor laser 11 becomes constant. The semiconductor laser drive unit 12 is controlled by the reproduction power control signal from the reproduction power control unit 21, and the reproduction power of the semiconductor laser 11 is controlled to a constant value. At this time, the high frequency current superposition module 22 is in the ON state by the control signal from the microcomputer (CPU) 23, and outputs the high frequency current via the capacitor 24 and superimposes it on the drive current of the semiconductor laser 11.

【0017】記録時には、記録パワー制御部25から記
録パワーが一定値となるような記録パワー制御信号が出
力され、この記録パワー制御信号は変調部26でデータ
により変調されて再生パワー制御部21からの記録パワ
ー制御信号に重畳される形で半導体レーザ駆動部12に
送られる。半導体レーザ駆動部12はその記録パワー制
御信号により制御され、半導体レーザ11からの記録パ
ワーが制御される。このとき、高周波電流重畳モジュー
ル22はCPU23からの制御信号によりオフ状態とな
り、半導体レーザ11の駆動電流に対する高周波電流重
畳が行われない。また、半導体レーザ11からの光がビ
ームスプリッタ13,プリズム15,対物レンズ16を
介して記録媒体17に照射され、データが記録媒体17
に記録される。
At the time of recording, a recording power control signal is output from the recording power control unit 25 so that the recording power becomes a constant value, and this recording power control signal is modulated by the data in the modulation unit 26 and is reproduced from the reproduction power control unit 21. Is sent to the semiconductor laser drive unit 12 in a form of being superimposed on the recording power control signal. The semiconductor laser drive unit 12 is controlled by the recording power control signal, and the recording power from the semiconductor laser 11 is controlled. At this time, the high frequency current superposition module 22 is turned off by the control signal from the CPU 23, and the high frequency current superposition is not performed on the drive current of the semiconductor laser 11. Further, the light from the semiconductor laser 11 is applied to the recording medium 17 via the beam splitter 13, the prism 15 and the objective lens 16, and the data is recorded on the recording medium 17.
Recorded in.

【0018】次に、本実施例において、半導体レーザ1
1駆動電流に対する高周波電流重畳のオフ状態からオン
状態への遷移(図2の点C→点D→点A:曲線αの特
性)時の再生パワーの変動を抑制する点について説明す
る。図4は本実施例の動作フローを示し、図5は本実施
例のタイミングチャートを示す。
Next, in the present embodiment, the semiconductor laser 1
The point of suppressing the fluctuation of the reproduction power at the time of the transition of the high frequency current superposition for one drive current from the off state to the on state (point C → point D → point A in FIG. 2: characteristic of curve α) will be described. FIG. 4 shows an operation flow of this embodiment, and FIG. 5 shows a timing chart of this embodiment.

【0019】高周波電流重畳モジュール22がCPU2
3からの制御信号によりオンして再生パワー制御部21
により半導体レーザ11からの再生パワーが制御されて
点Aの状態となる。この状態で、検出アンプ20の出力
信号がピーク検出部27によりサンプルされてA/D変
換後にCPU23に送られる。この時、サンプル電圧
(ピーク検出部27によりサンプルした検出アンプ20
の出力信号電圧)をV1とする。
The high frequency current superposition module 22 is the CPU 2
The reproduction power control unit 21 is turned on by the control signal from
As a result, the reproduction power from the semiconductor laser 11 is controlled and the state of point A is reached. In this state, the output signal of the detection amplifier 20 is sampled by the peak detection unit 27, A / D converted, and sent to the CPU 23. At this time, the sample voltage (the detection amplifier 20 sampled by the peak detection unit 27
The output signal voltage) and V 1.

【0020】次に、CPU23により高周波電流重畳モ
ジュール22がオフされて再生パワー制御がかかるのを
待つ(点A→点B→点Cと変化する)。その後、高周波
電流重畳モジュール22がCPU23からの制御信号に
よりオンすると、再生パワーは点C→点D→点Aと変化
し、点Dでの検出アンプ20の出力信号電圧、つまり高
周波電流重畳オン時の再生パワー変動量がピーク検出部
27によりサンプルされてA/D変換された後にCPU
23に送られる。この時、サンプル電圧をV2とする。
Next, the CPU 23 waits until the high frequency current superposition module 22 is turned off and the reproduction power control is applied (change from point A to point B to point C). After that, when the high frequency current superposition module 22 is turned on by the control signal from the CPU 23, the reproduction power changes from point C to point D to point A, and the output signal voltage of the detection amplifier 20 at the point D, that is, when the high frequency current superposition is turned on. Of the reproduction power fluctuation amount of the CPU is sampled by the peak detection unit 27 and A / D converted, and then the CPU
Sent to 23. At this time, the sample voltage is V 2 .

【0021】CPU23はV1,V2より(V2−V1)/
e+V1なる電圧V3を算出してこのV3を基準電圧設定
部28に基準電圧として設定する。ここに、eは2.7
18・・・の定数である。コンパレータ29は検出アン
プ20の出力信号電圧から基準電圧設定部28の基準電
圧を引いてその差を求める。CPU23はV3設定後に
高周波電流重畳モジュール22をオフさせ、再度オンさ
せる。
The CPU 23 uses V 1 and V 2 to obtain (V 2 −V 1 ) /
A voltage V 3 of e + V 1 is calculated and this V 3 is set in the reference voltage setting unit 28 as a reference voltage. Here, e is 2.7.
It is a constant of 18 ... The comparator 29 subtracts the reference voltage of the reference voltage setting unit 28 from the output signal voltage of the detection amplifier 20 to obtain the difference. After setting V 3, the CPU 23 turns off the high frequency current superposition module 22 and turns it on again.

【0022】CPU23は高周波電流重畳モジュール2
2のオンからコンパレータ29の出力信号が’1’とな
る時点までの時間tonを測定する。このtonは高周
波電流重畳のオフ時からオン時までの再生パワー変動
(図2の曲線α)の時定数である。以後、CPU23は
高周波電流重畳のオフからオンまでの間にはtonによ
り曲線αを指数関数で近似してこれにより曲線αと逆特
性を示す電流値を加算電流発生部30に設定し、この加
算電流発生部30の電流値が加算部31により半導体レ
ーザ11の駆動電流に加算されて再生パワーの変動が抑
制される。
The CPU 23 is the high frequency current superposition module 2
The time ton from when 2 is turned on to when the output signal of the comparator 29 becomes "1" is measured. This ton is a time constant of the reproducing power fluctuation (curve α in FIG. 2) from the time of turning off the high frequency current superposition to the time of turning it on. After that, the CPU 23 approximates the curve α with an exponential function by ton during the high frequency current superimposition from off to on, sets the current value having the inverse characteristic to the curve α in the addition current generation unit 30, and adds this. The current value of the current generator 30 is added to the drive current of the semiconductor laser 11 by the adder 31 to suppress the fluctuation of the reproduction power.

【0023】ここに、高周波電流重畳のオフからオンに
なるタイミングは記録媒体17上のデータ再生位置がタ
ーゲットセクタの1つ前のデータ部となるタイミングと
すれば記録媒体17からSM(セクタマーク)を読み出
せないといった心配がなくなる。また、高周波電流重畳
のオフからオンになることによる再生パワーの変動が生
じないので、記録媒体17上のデータの破壊といった心
配がなくなる。
Here, when the high-frequency current superimposition is switched from OFF to ON, if the data reproduction position on the recording medium 17 is the data portion immediately before the target sector, the recording medium 17 is SM (sector mark). No more worries about not being able to read. Further, since the reproduction power does not change due to the turning on of the high frequency current superposition from the turning on to the turning on, there is no fear of destroying the data on the recording medium 17.

【0024】また、半導体レーザ11駆動電流に対する
高周波電流重畳のオン状態からオフ状態への遷移(図2
の点A→点B→点C:曲線βの特性)時にも同様に再生
パワーの変動が抑制される。すなわち、高周波電流重畳
モジュール22がCPU23からの制御信号によりオン
して再生パワー制御部21により半導体レーザ11から
の再生パワーが制御されて点Aの状態となる。この状態
で、検出アンプ20の出力信号がピーク検出部27によ
りサンプルされてA/D変換後にCPU23に送られ
る。この時、サンプル電圧(ピーク検出部27によりサ
ンプルした検出アンプ20の出力信号電圧)をV4とす
る。
Further, the transition of the superposition of the high frequency current with respect to the driving current of the semiconductor laser 11 from the on state to the off state (see FIG. 2).
(Point A → point B → point C: characteristic of curve β), the fluctuation of the reproducing power is similarly suppressed. That is, the high frequency current superposition module 22 is turned on by the control signal from the CPU 23, and the reproduction power from the semiconductor laser 11 is controlled by the reproduction power control unit 21 to reach the state of point A. In this state, the output signal of the detection amplifier 20 is sampled by the peak detection unit 27, A / D converted, and sent to the CPU 23. At this time, the sample voltage (the output signal voltage of the detection amplifier 20 sampled by the peak detection unit 27) is set to V 4 .

【0025】次に、CPU23により高周波電流重畳モ
ジュール22がオフされると、再生パワーは点A→点B
→点Cと変化し、点Bでの検出アンプ20の出力信号電
圧、つまり高周波電流重畳オフ時の再生パワー変動量が
ピーク検出部27によりサンプルされてA/D変換され
た後にCPU23に送られる。この時、サンプル電圧を
5とする。
Next, when the high frequency current superposition module 22 is turned off by the CPU 23, the reproduction power is changed from point A to point B.
→ It changes from point C, and the output signal voltage of the detection amplifier 20 at point B, that is, the amount of reproduction power fluctuation when the high frequency current superposition is off is sampled by the peak detector 27 and A / D converted, and then sent to the CPU 23. . At this time, the sample voltage is V 5 .

【0026】CPU23はV4,V5より(V5−V4)/
e+V4なる電圧V6を算出してこのV6を基準電圧設定
部28に基準電圧として設定する。コンパレータ29は
検出アンプ20の出力信号電圧から基準電圧設定部28
の基準電圧を引いてその差を求める。CPU23はV6
設定後に高周波電流重畳モジュール22をオンさせ、再
度オフさせる。
The CPU 23 uses V 4 and V 5 to obtain (V 5 −V 4 ) /
A voltage V 6 of e + V 4 is calculated and this V 6 is set in the reference voltage setting unit 28 as a reference voltage. The comparator 29 calculates the reference voltage setting unit 28 based on the output signal voltage of the detection amplifier 20.
Subtract the reference voltage of to obtain the difference. CPU 23 is V 6
After setting, the high frequency current superposition module 22 is turned on and turned off again.

【0027】CPU23は高周波電流重畳モジュール2
2のオフからコンパレータ29の出力信号が’1’とな
る時点までの時間ton’を測定する。このton’は
高周波電流重畳のオン時からオフ時までの再生パワー変
動(図2の曲線β)の時定数である。以後、CPU23
は高周波電流重畳のオンからオフまでの間にはton’
により曲線βを指数関数で近似してこれにより曲線βと
逆特性を示す電流値を加算電流発生部32に設定し、こ
の加算電流発生部32の電流値が加算部31により半導
体レーザ11の駆動電流に加算されて再生パワーの変動
が抑制される。これにより高周波電流重畳がオンからオ
フになっても再生パワーの低下によるトラック外れの心
配がなくなる。
The CPU 23 is the high frequency current superposition module 2
The time ton 'from the turning off of 2 to the time when the output signal of the comparator 29 becomes'1' is measured. This ton 'is a time constant of the reproduction power fluctuation (curve β in FIG. 2) from the on time to the off time of the high frequency current superposition. After that, the CPU 23
Is ton 'during high-frequency current superposition from on to off
Then, the curve β is approximated by an exponential function, and a current value exhibiting an inverse characteristic of the curve β is set in the addition current generator 32. The current value of the addition current generator 32 drives the semiconductor laser 11 by the addition unit 31. The fluctuation of the reproduction power is suppressed by being added to the current. As a result, even if the high frequency current superposition changes from on to off, there is no concern that the track will be off due to a reduction in reproduction power.

【0028】また、本実施例では、高周波電流重畳のオ
ン/オフを行う回路等は半導体部品を用いているおり、
光ディスク装置内の温度変化により曲線α,β等の特性
が変化するので、装置内温度検出手段32により光ディ
スク装置内の温度が検出され、CPU23は装置内温度
検出手段32の出力信号から装置内の温度変化(例えば
10℃の変化)が生ずる毎に上述のように曲線α,βの
特性を検出し直す。このため、高周波電流重畳のオン/
オフによる再生パワーの変動がさらに抑制され、データ
再生の信頼性を上げることができる。また、本実施例で
は、再生パワー変化の特性を検出する手段としてCPU
23を用いているので、簡単な構成で実現でき、容易か
つ安価に再生パワー変動の検出を行うことができる。
Further, in this embodiment, semiconductor parts are used for the circuit for turning on / off the high frequency current superposition,
Since the characteristics such as the curves α and β change due to the temperature change inside the optical disk device, the temperature inside the optical disk device is detected by the inside temperature detecting means 32, and the CPU 23 detects the inside of the device from the output signal of the inside temperature detecting means 32. Each time a temperature change (for example, a change of 10 ° C.) occurs, the characteristics of the curves α and β are detected again as described above. Therefore, the high frequency current superposition is turned on /
The fluctuation of the reproduction power due to the OFF state is further suppressed, and the reliability of data reproduction can be improved. Further, in the present embodiment, a CPU is used as a means for detecting the characteristic of the change in reproduction power.
23 is used, it is possible to realize with a simple configuration, and it is possible to easily and inexpensively detect the fluctuation of the reproducing power.

【0029】[0029]

【発明の効果】以上のように本発明によれば、再生パワ
ー変動特性を検出して再生パワーの変動を抑制するの
で、再生パワー制御系の帯域が低い場合にも高周波電流
重畳のオン/オフによる再生パワーの変動を抑制するこ
とができ、高周波電流重畳がオンからオフした時の再生
パワーの低下によるトラック外れやセクタマークの読み
取りミスがなくなって信頼性を向上させることができ
る。また、高周波電流重畳がオフからオンした時にも再
生パワーを一定に保ことができて再生パワーの上昇によ
るデータ破壊がなくなる。さらに、光ディスク装置内の
温度変化を検出手段により検出してこの検出手段の出力
信号に応じて再生パワー変動の抑制動作を行うので、再
生パワーの変動をさらに抑制することができ、データ再
生の信頼性を上げることができる。
As described above, according to the present invention, since the reproduction power fluctuation characteristic is detected to suppress the fluctuation of the reproduction power, the high frequency current superposition is turned on / off even when the band of the reproduction power control system is low. It is possible to suppress the fluctuation of the reproducing power due to, and it is possible to improve the reliability by eliminating the off-track and the reading error of the sector mark due to the decrease of the reproducing power when the high frequency current superposition is turned off. Further, the reproduction power can be kept constant even when the high frequency current superimposition is turned on and the data destruction due to the increase of the reproduction power is eliminated. Further, since the temperature change in the optical disk device is detected by the detecting means and the reproducing power fluctuation suppressing operation is performed in accordance with the output signal of the detecting means, the reproducing power fluctuation can be further suppressed, and the reliability of the data reproduction can be improved. You can improve your sex.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例を示すブロック図である。FIG. 1 is a block diagram showing an embodiment of the present invention.

【図2】同実施例を説明するための図である。FIG. 2 is a diagram for explaining the same embodiment.

【図3】従来例を説明するための図である。FIG. 3 is a diagram for explaining a conventional example.

【図4】同実施例の動作フローを示すフローチャートで
ある。
FIG. 4 is a flowchart showing an operation flow of the embodiment.

【図5】同実施例のタイミングチャートである。FIG. 5 is a timing chart of the embodiment.

【符号の説明】[Explanation of symbols]

11 半導体レーザ 12 半導体レーザ駆動部 13 ビームスプリッタ 14 発光パワー検出用受光素子 16 対物レンズ 17 記録媒体 20 検出アンプ 21 再生パワー制御部 22 高周波電流重畳モジュール 23 CPU 27 ピーク検出部 28 基準電圧設定部 29 コンパレータ 30,32 加算電流発生部 31 加算部 11 semiconductor laser 12 semiconductor laser drive unit 13 beam splitter 14 light receiving element for light emission power detection 16 objective lens 17 recording medium 20 detection amplifier 21 reproduction power control unit 22 high frequency current superposition module 23 CPU 27 peak detection unit 28 reference voltage setting unit 29 comparator 30, 32 Addition current generation unit 31 Addition unit

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】半導体レーザからの光を対物レンズにより
記録媒体上に集光して情報の記録及び再生を行い、情報
の再生時と情報の記録時とで前記半導体レーザの駆動電
流への高周波電流重畳のオン/オフを切換える光ディス
ク装置において、前記高周波電流重畳をオン状態からオ
フ状態へ又は/及びオフ状態からオン状態へ切換える際
の再生パワー変動特性を検出する検出手段と、この検出
手段で検出した再生パワー変動特性により再生パワーの
変動を抑制する再生パワー変動抑制手段とを備えたこと
を特徴とする光ディスク装置。
1. The light from a semiconductor laser is focused on a recording medium by an objective lens to record and reproduce information, and a high frequency is applied to a drive current of the semiconductor laser during reproduction of information and during recording of information. In an optical disk device for switching on / off of current superposition, a detection means for detecting reproduction power fluctuation characteristics when the high frequency current superposition is switched from an on state to an off state and / or from an off state to an on state, and the detection means An optical disk device comprising: a reproduction power fluctuation suppressing unit that suppresses fluctuations in the reproduction power based on the detected reproduction power fluctuation characteristic.
【請求項2】請求項1記載の光ディスク装置において、
該光ディスク装置内の温度変化を検出する検出手段を有
し、この検出手段の出力信号に応じて前記再生パワー変
動の抑制動作を行うことを特徴とする光ディスク装置。
2. The optical disk device according to claim 1, wherein
An optical disc device having a detecting means for detecting a temperature change in the optical disc device, and performing an operation of suppressing the reproduction power fluctuation according to an output signal of the detecting means.
【請求項3】半導体レーザからの光を対物レンズにより
記録媒体上に集光して情報の記録及び再生を行い、情報
の再生時と情報の記録時とで前記半導体レーザの駆動電
流への高周波電流重畳のオン/オフを切換える光ディス
ク装置の半導体レーザ発光パワー変化抑制方法であっ
て、前記半導体レーザの発光パワーを検出してこの発光
パワーの変化の特性を検出し、この特性により前記半導
体レーザの発光パワーの変化を補正するように前記半導
体レーザの駆動電流に所定の電流を加算することを特徴
とする半導体レーザ発光パワー変化抑制方法。
3. The light from a semiconductor laser is focused on a recording medium by an objective lens to record and reproduce information, and a high frequency to a drive current of the semiconductor laser at the time of reproducing information and at the time of recording information. A method for suppressing change in semiconductor laser emission power of an optical disk device for switching on / off of current superposition, comprising detecting the emission power of the semiconductor laser and detecting a characteristic of the change in the emission power. A semiconductor laser emission power change suppression method, characterized in that a predetermined current is added to the drive current of the semiconductor laser so as to correct the change in emission power.
JP4284604A 1992-10-22 1992-10-22 Optical disk device and method for suppressing change of semiconductor laser emission power Pending JPH06139580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4284604A JPH06139580A (en) 1992-10-22 1992-10-22 Optical disk device and method for suppressing change of semiconductor laser emission power

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4284604A JPH06139580A (en) 1992-10-22 1992-10-22 Optical disk device and method for suppressing change of semiconductor laser emission power

Publications (1)

Publication Number Publication Date
JPH06139580A true JPH06139580A (en) 1994-05-20

Family

ID=17680612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4284604A Pending JPH06139580A (en) 1992-10-22 1992-10-22 Optical disk device and method for suppressing change of semiconductor laser emission power

Country Status (1)

Country Link
JP (1) JPH06139580A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010205320A (en) * 2009-03-02 2010-09-16 Sony Computer Entertainment Inc Optical disk device, method for controlling the same, program, and information storage medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010205320A (en) * 2009-03-02 2010-09-16 Sony Computer Entertainment Inc Optical disk device, method for controlling the same, program, and information storage medium

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