JPH06136521A - Production of thin film and device therefor - Google Patents

Abstract

PURPOSE:To prevent the generation of splashes on a molten layer in the case of film forming at the time of producing a thin film on a substrate, to eliminate the defects of the vapor-deposited thin film thereby, furthermore to secure stable characteristics and to improve the productivity. CONSTITUTION:In the melting stage, a primary molten layer with thickness delta1 is formed. After that, a solidified layer 21a is formed at the bottom of the primary molten layer. Furthermore, in the film forming stage, a secondary molten layer 22 with thickness delta2 is formed. The molten metal corresponding to the evaporating layer 26 with thickness deltae equivalent to the required amt. to be evaporated is evaporated, and the relationship of delta1>delta2+deltae is established among these thicknesses A barrier layer constituted of the solidified layer with thickness deltas1 {=delta1-(delta2+deltae)} is formed, the penetration of released gas through the secondary molten layer 22 from its lower direction is prevented, and the generation of splashes in the film forming stage can be prevented even in the case of high speed film forming.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film manufacturing method and a manufacturing apparatus for stably forming a thin film having excellent characteristics by vacuum deposition by electron beam heating. In particular, when forming a thin film whose composition is important in terms of characteristics, such as an optical thin film, prevent the inclusion of foreign matter from the molten material of the evaporation source into the thin film, and the occurrence of splashes that cause compositional changes in the thin film. The present invention relates to a method and an apparatus for manufacturing a thin film capable of performing

[0002]

_2. Description of the Related Art A conventional electron beam evaporation method is used as an example to form an optical multilayer film composed of TiO ₂ and SiO ₂ and its outline will be described with reference to FIG.

Reference numeral 1 is a vacuum chamber, and a gas introduction valve 2
While introducing oxygen by the vacuum pump 3, the vacuum pump 3 always provides a predetermined constant vacuum pressure (here, about 5.2 × 10 ^-2 P
It is exhausted to a).

The evaporation source 12 is a crucible 14 made of molybdenum installed in the hearth 15, a vapor deposition material (for example, TiO ₂ ) 13 accommodated in the crucible 14, and an electron beam 11 is generated to melt the vapor deposition material 13. It is composed of an electron beam generator 4 for generating steam 8. Substrate 7 is evaporation source 1
A shutter 5 is installed between the evaporation source 12 and the substrate 7 in order to control the time for vapor 8 to form a film on the substrate 7.

The hearth 15 has a recess for installing the crucible 14 and an internal cooling water passage 16 and is water-cooled. By placing the crucible 14 in contact with the recess, the hearth 1
The vapor deposition material 13 is cooled from the outside via 4.

There are two reasons for cooling the vapor deposition material. One is to stabilize the temperature of the vapor deposition material 13 in a short time after the melting of the vapor deposition material 13 is started to shorten the time until film formation. The other is to prevent the composition deviation of the thin film, that is, the deterioration of the characteristics due to the inclusion of impurities from the crucible 14 into the vapor deposition material 13.

The reason for introducing oxygen through the gas introducing valve 2 is to ensure excellent optical characteristics by supplying oxygen dissociated from TiO ₂ or SiO ₂ during or before evaporation.

The shutter 5 is in the closed state at the position shown in the drawing except when the film is formed such as when the vapor deposition material 13 starts melting.
The deposition of the vapor 8 on the substrate 7 is suppressed. Then, when forming a film on the substrate 7, the shutter 5 is rotated in the direction of the arrow 6 and is opened, and the shutter 5 is retracted to a position where the deposition of the vapor 8 on the substrate 7 is not suppressed. A thin film 9 is formed on.

[0009]

With such a configuration, an example
For example, as when forming an optical multilayer film, TiO₂And SiO
₂When alternately forming and, each layer has excellent optical characteristics
And that there is no defect such as the inclusion of foreign matter.
In both cases, the film formation time of each layer should be shortened, that is, the film formation speed.
Is required to be improved.

But especially TiO₂The film is a high melting point material
Therefore, it is difficult to obtain a high film formation rate.
However, there are some problems as described below.
The desired optical characteristics were not obtained. For this reason
Is TiO only at a low deposition rate ₂Film can be deposited
However, the productivity was low.

The above problem is the occurrence of splash. The cause of the splash is that the gas (for example, oxygen) released from the vapor deposition material or impurities generated or decomposed explodes and explodes, causing the molten vapor deposition material near the evaporation surface to scatter. Is. The generation of splash will be described below with reference to FIGS. 7 and 6.

The granular vapor deposition material 21a previously stored in the crucible 14 is melted by the electron beam 11 to form a molten layer 22. During the formation of the molten layer 22 or when the lower vapor deposition material 21a gradually melts into the molten layer 22, a gas is generated from the impurities present in the vapor deposition material 21a and is released as shown by arrows 24a and 24b. To be done. As a result, gas 24 passes from the evaporation surface through the molten layer 22.
When a is released, the released gas expands and bursts in the vicinity of the evaporation surface of the molten layer 22, causing the melted material to scatter and generate a splash 23a. Similarly, the gas 24b discharged toward the interface between the molten layer 22 and the crucible 14 causes a splash 23b at the interface. Further, although the amount of the vapor deposition material 21a dissolved in the molten layer 22 is gradually reduced, gas is generated inside the molten layer 22 and splashes 23a and 23b are generated in the same manner as described above.

When such splashes 23a and 23b are generated during film formation, the splashes 23a and 23b are taken into the thin film 9 on the substrate 7 to cause defects in the thin film 9, and further, when the splashes 23a and 23b are generated. The released gas 24a, 24b causes a change in the vacuum pressure in the vacuum chamber 1, which causes a large change in the film composition. Therefore, the thin film 9 formed in such a state cannot satisfy the optical characteristics.

Even when the film forming rate is low, as the vapor deposition time elapses, as shown in FIG. 7, the molten layer 22 descends downward, and when the vapor deposition material 21a melts, released gas is generated,
The sudden splash that occurs after the gas has accumulated to some extent cannot be completely prevented. Therefore, also in this case, a satisfactory thin film has a low yield and the productivity is extremely low.

The present invention is intended to solve the above problems, and an object of the present invention is to form a film having excellent characteristics and free from defects such as contamination of foreign matter, and to shorten the film formation time. is there.

[0016]

A first aspect of the present invention is a method for forming a thin film on a substrate by evaporating a vapor deposition material, which comprises irradiating the vapor deposition material in a crucible with an electron beam to remove the vapor deposition material. A melting step of forming a molten metal by melting and forming a first molten layer having a thickness δ1, and the first step after the melting step.
The formation of a solidified layer at the bottom of the molten layer and the formation of a second molten layer of thickness δ2 in the molten metal while evaporating the molten metal of thickness δe corresponding to the required evaporation amount required for film formation on the substrate from the molten metal And a film process, each thickness δ1, δ2, δ
The method for producing a thin film is characterized in that a relation of δ1> δ2 + δe is established between e.

A second invention is a method for forming a thin film on a substrate by evaporating a vapor deposition material, wherein a surface layer of the vapor deposition material in a crucible is previously melted by irradiation of an electron beam and then solidified. A step of forming a solidified layer having a thickness δs, and a supply material layer by replenishing the solidified layer with an amount of vapor deposition material corresponding to a required evaporation amount required for film formation of the substrate, which has a thickness of δe when melted. And a melting step of forming a molten metal by melting the replenishment material layer and a part of the solidified layer by irradiation with the electron beam to form a molten layer having a thickness δm, and After the melting step, there is a film forming step of evaporating a molten metal having a thickness δe corresponding to the required evaporation amount from the surface of the molten layer to form a film on the substrate, and between the respective thicknesses δs, δm, δe. To satisfy the relation δs>δm> δe. It is a manufacturing method of a thin film of a symptom.

In a third aspect of the invention, the normal state in which the crucible is in contact with the water-cooled hearth is changed to the state in which the crucible is separated from the water-cooled hearth, and the vapor deposition material is melted in the state in which the crucible is separated from the water-cooled hearth. This is a method for manufacturing a thin film.

A fourth aspect of the invention is to form a thin film on a crucible which contains a vapor deposition material and is placed in contact with a water-cooled hearth, and vaporizes the vapor deposition material in the crucible to form a thin film on a substrate placed above the crucible. Electron beam heating means for, and having a shutter installed between the crucible and the substrate to cut the material vapor to the substrate, the crucible, a gas discharge passage for communicating the inside and outside of the wall of the crucible It is a thin film manufacturing apparatus characterized by being formed.

[0020]

According to the first aspect of the invention, the thickness of the first molten layer formed in the melting step is set to δ1, and the solidified layer is formed at the bottom of the first molten layer in the subsequent film forming step. Let δ 2 be the thickness of the second molten layer formed in step 2, and let δ be the thickness of the molten metal that corresponds to the required evaporation amount for film formation on the substrate.
As e, by establishing the relation δ1> δ2 + δe between the respective thicknesses, even if the level of the second molten layer of thickness δ2 is reduced by δe due to evaporation of the evaporation material, δ1 − ( A barrier layer of δ2 + δe) is always formed. This barrier layer prevents the gas emitted from below or the vapor deposition material containing the gas from melting into the second molten layer, and film formation is performed with this barrier layer formed. Also, the occurrence of splash in the film forming process is prevented.

According to the second aspect of the invention, on the solidified layer having a thickness δs formed by previously melting and solidifying the vapor deposition material, the amount of evaporation required for film formation of the substrate is the same as the required evaporation amount δ.
When a supplementary material to be e is supplied to form a supplemental material layer and the supplementary material layer and a part of the solidified layer are melted to form a molten layer having a thickness δm, δs> By establishing the relation δm> δe, that is, δm> δe
Therefore, when the molten layer having the thickness δm is formed, the supplementary material is completely melted, and the gas released from the supplementary material is discharged and removed in the melting step. Also, when all the required supplementary materials have evaporated, the level of the molten layer decreases accordingly, and the position of the surface of this molten layer becomes equal to the position of the surface of the original solidified layer, but δs> δm. As a result, a barrier layer consisting of a solidified layer and having a thickness of δs-δm is always formed. This barrier layer prevents the gas released from the vapor deposition material below or the vapor deposition material containing the gas from melting into the molten layer, and the film formation is performed in the state where the barrier layer is formed. Also in the above, the occurrence of splash in the film forming process is prevented.

According to the second aspect of the invention, since the solidified layer is formed and remains on the upper portion of the vapor deposition material in the crucible after the above process, the vaporized material is replenished on the solidified layer in the same manner as above. By repeating the melting and film forming process, the film is stably formed, so that stable production is realized for a long period of time.

According to the third aspect of the invention, the cooling state of the vapor deposition material in the crucible is controlled with the water-cooled hearth and the crucible being in contact with each other in the melting step. It becomes possible to increase the thickness.
Therefore, even under a high deposition rate for a long time,
Splash is prevented from being generated in the film forming process.

According to the fourth aspect of the invention, the gas discharge passage provided in the crucible allows the gas discharged from the unmelted vapor deposition material existing below the molten layer or the solidified layer of the vapor deposition material to pass through the molten layer. Since it is released to the outside of the crucible, the gas is released in a short time when the vapor deposition material is melted. Therefore, even at a high film forming rate, the occurrence of splash in the film forming process is prevented.

According to the above-mentioned first to fourth inventions, the generation of splash, which has been a problem in achieving a high film-forming rate, is prevented, there is no defect due to this splash, and an excellent thin film with stable characteristics is provided. However, it can be stably manufactured in a significantly shorter time than ever before.

[0026]

EXAMPLES The present invention will in the manufacture of optical multilayer film constituted by Ti O ₂ and Si O _2, in particular embodiments when applied to deposition of the Ti O _2, with reference to the accompanying only drawings described To do. It should be noted that components having the same or equivalent functions as those of the conventional example are designated by the same reference numerals, and detailed description thereof will be omitted.

A first embodiment of the present invention is shown in FIGS.
Will be explained. FIG. 1 is a cutaway sectional view of an evaporation source in a film forming process. FIG. 2 is a cutaway sectional view of the evaporation source at the start of the melting step after the material replenishing step. FIG. 3 is a graph showing the relationship between the electron beam input power Pin and the melting layer / solidification layer thickness δ.

In FIG. 1, 21 from the bottom of the crucible 14
a is an unmelted vapor deposition material, 25b is a solidified layer with a thickness δs1, 2
Reference numeral 2 is a molten layer having a thickness of δm. Reference numeral 26 denotes an evaporation layer having a thickness δe that has already evaporated from the molten layer. Further, in FIG. 2, from the bottom of the crucible 14, 21a is an unmelted vapor deposition material, 25a is a solidified layer having a thickness δs, and 21b is a thickness δr.
Is a newly replenished vapor deposition material layer. Further, in FIG. 3, the curve 1 is the case where the crucible 14 is in contact with the water-cooled hearth 15 and cooled as shown in FIGS.
Shows the case where the crucible 14 is spaced apart from the cooling hearth 15 by a gap and is not cooled from the outside.

Each process up to film formation will be described below. First, the process of supplying the vapor deposition material will be described with reference to FIG. here,
On the solidified layer 25a formed in advance, the amount of evaporation required for forming a thin film having a required thickness is the same as the amount of δ when melted.
A deposition material of an amount e is newly replenished to form a replenishment material layer 21b having a thickness δr.

By the way, the solidification layer 25a having a thickness δs formed in advance as the upper layer of the vapor deposition material 21a has a required amount of the vapor deposition material 21a housed in the crucible 14 as the electron beam 1
It can be formed by melting according to No. 1 to form a molten layer having a thickness δs and then solidifying the molten layer. In order to obtain the desired solidified layer thickness δs, the input power Pin of the electron beam required for it is determined and set from the curve 1 shown in FIG.

Next, the melting step after the replenishing step will be described with reference to FIG.
2 is used for the explanation. Although not shown, in this step, the shutter is closed so that vapor does not reach the substrate. While gradually increasing the power of the electron beam 11 to a predetermined value Pd, the replenishment material layer 21b and a part of the upper portion of the solidification layer 25a shown in FIG. 2 are melted, and the thickness δe of the molten portion of the replenishment material and the upper portion of the solidification layer 25a are melted. By combining the thickness of the melted portion of a part of the above, a molten layer having a thickness δm shown in FIG. 1 is formed.

At this time, by melting up to a part of the solidified layer 25a so that δm> δe, the replenishment material layer 21b is completely melted and the unmelted replenishment material remains at the bottom of the replenishment material layer 21b. Is prevented. By doing this,
When vaporization is performed in the film forming step, the generation of splash due to the gas release due to the melting of the unmelted replenishment material is prevented. Further, when the replenishment material layer 21b is melted, a slight splash may occur in the melted layer 22 due to gas release, but no problem occurs by closing the shutter.

Further, the film forming process after the melting process will be described with reference to FIG. After the molten layer 22 is stabilized with the power kept at Pd, the shutter is retracted to form a film. Then, as the film formation time elapses, the evaporation layer 26 corresponding to the required evaporation amount required for film formation evaporates from the molten layer 22. However, since the thickness δm of the molten layer 22 is constant when the power is Pd from FIG. 3, the molten layer 22 drops by the thickness δe of the evaporation layer 26 evaporated from the molten layer 22, The solidified layer 25a is eroded and melted by that amount, and its thickness becomes smaller than δs. At this time, the molten layer 22 is lowered by the thickness δe of the evaporation layer 26, so that the molten layer 22
Since the position of the surface of the solidified layer is equal to the position of the surface of the original solidified layer 25a, by setting δs> δm, the solidified layer of thickness δs1 (= δs −δm) which becomes the barrier layer as shown in FIG. 25b must exist.

No push occurs when the solidified layer 25a melts. Further, since the solidified layer 25b serves as a barrier layer, a splash due to the gas released from the unmelted vapor deposition material layer 21a being mixed into the molten layer 22 does not occur. As a matter of course, since the released gas is not generated even when the solidified layer 25b is melted, the splash is not generated.

Therefore, even if the thin film manufacturing process includes a replenishing process, a melting process, and a film forming process, according to the method described above, the presence of the solidified layer 25b serving as a barrier layer causes a splash. It is possible to form a film without generating That is, δs>δm> δ between each thickness
By forming the film after establishing the relationship e, it is possible to reliably prevent the occurrence of splash. Also,
By controlling the replenishment amount of the replenishment material and the evaporation amount at the time of film formation to be equal, it is possible to stably repeat the process from the material replenishment process to the film formation process, and to realize more stable film formation.

In the above, the solidification layer 25a provided in advance is used.
An example has been described in which the supply material layer 21b is formed thereon, and then the molten layer and the solidified layer are formed. However, when a high-purity material that releases less gas is used, the film may be formed by the following method without replenishment.

That is, considering the solidified layer thickness in the curve 1 of FIG. 3, as the power Pin increases, the solidified layer thickness also increases in the same manner as the molten layer thickness. Therefore, by utilizing this fact, in the melting step, the vapor deposition material 21a is first melted at a power Ph higher than the power Pd at the time of film formation to form a first molten layer having a thickness δ1 as shown in FIG. Next, by setting a low power Pd during film formation, a solidified layer is formed at the bottom of the first molten layer, and a solidified layer 25b having a thickness δs1 is formed below the second molten layer 22 having a thickness δ2. And the second molten layer 2
After 2 becomes stable, the evaporation layer 26 having a thickness of δe is evaporated to form a film.

Due to this evaporation, the level of the second molten layer 22 is reduced by δe, but δ1> δ2 + δe between the thicknesses.
By satisfying the following relation, the barrier layer of the solidified layer 25b having the thickness δs1 {= δ1− (δ2 + δe)} is always formed, and the film can be formed without causing the splash. It is possible to stably manufacture a thin film having no defects and excellent characteristics.

Although the case where the solidified layer is formed in the crucible 14 has been described above, the solidified layer itself of the vapor deposition material may form the crucible. In that case, at least the inner surface of the vapor deposition material corresponding to the shape of the crucible may be irradiated with an electron beam to melt the surface and then solidified to form a solidified layer.

Next, as a second embodiment, in the melting step before starting the vapor deposition on the substrate, the gas of the vapor deposition material can be sufficiently released in a shorter time and the time of the melting step can be shortened. , Will be described with reference to FIGS.

In order to sufficiently release the gas from the vapor deposition material, it is most effective to raise the vapor deposition material to a high temperature. For that purpose, it is better to separate the crucible from the water-cooled hearth in the melting step and not perform forced cooling. Further, as a result of raising the temperature of the vapor deposition material, the relationship between the power Pin and the thickness of the molten layer in FIG. FIG. 4 shows a schematic configuration of the evaporation source section of the apparatus used in the second embodiment.

Here, 31 is a crucible, the lower surface of the edge 32 of which is held by an elevating device 33 and is moved up and down in the direction of arrow 34. FIG. 4 shows a raised state, in which the crucible 31 is separated from the water-cooled hearth 15. When the two are brought into contact with each other, the crucible 31 is lowered by the elevating device 33.

With the above-described structure, in the melting step, the crucible 31 and the water-cooled hearth 15 are separated from each other as shown in FIG. 4, and the evaporation material 21a is heated and melted by the electron beam 11 without cooling the crucible 31. A molten layer 22 having a thickness δm2 is formed. At this time, when the power Pd during film formation is set as the melting power with and without cooling of the crucible 31, the vapor deposition material 2 in the crucible 31 is more than when the crucible 31 and the water-cooled hearth 15 are in contact with each other.
Since the entire 1a can be heated to a high temperature, the thickness of the molten layer can be made sufficiently thick as δm2 compared to δm in FIG. 1, and gas can be sufficiently released from the unmelted vapor deposition material layer 21a and the molten layer 22 in a short time. be able to.

After the melting, when the crucible 31 is lowered and brought into contact with the cooling hearth 15, the molten layer 22 and the vapor deposition material layer 21a are cooled from the outside of the crucible 31 and the lower portion of the molten layer 22 is solidified and the same as in FIG. A solidified layer is formed on the surface. The film formation step is started after the temperature state of the molten layer 22, that is, the evaporation rate is stabilized. However, since the solidified layer is present as in the case of the first embodiment, splash is not generated during the film formation. Absent.

FIG. 5 shows a third embodiment. That is, it is effective to use the crucible 36 having the structure shown in FIG. 5 in order to release the gas in a shorter time. The crucible 36 has a gas discharge passage 3 communicating from the inner surface of the bottom of the wall to the outside.
7 are provided at several places.

According to the crucible 36 having this structure, the molten layer 22
Gas 38a generated from the vapor deposition material layer 21a below
Is the crucible 3 along the gas discharge passage 37 as shown by the arrow 38b.
6 is released to the outside. As a result, it is possible to easily and promptly release the gas from the vapor deposition material layer 21a in a short time, and to prevent the splash generations 23a and 23b at the time of releasing the gas, which has occurred in FIG.

Therefore, it is possible to prevent the occurrence of splash during film formation, to produce a thin film having no defects and excellent characteristics in a stable manner in a short time, and it is possible to realize a remarkable improvement in productivity.

The gas discharge passage 37 is not limited to the above-mentioned form, and may be any structure as long as it can discharge the gas in the lower part of the crucible to the outside through the side wall. For example, the crucible may be made of a porous material, in which case a myriad of minute gas discharge passages are formed.

Needless to say, the productivity can be further improved by using the structures of the above-described embodiments together.

[0050]

According to the present invention, it is possible to prevent the occurrence of splash, which has been a problem in achieving a high film forming rate,
An excellent thin film having no defects and stable characteristics can be manufactured in a significantly shorter time than in the conventional case.

Moreover, since the gas in the vapor deposition material can be released in a short time, the time from melting to the start of vapor deposition can be shortened. Therefore, the yield and the productivity can be remarkably improved in the production of the thin film.

[Brief description of drawings]

FIG. 1 is a cutaway sectional view of an evaporation source according to a first embodiment of the present invention.

FIG. 2 is a cutaway sectional view of an evaporation source for explaining the first embodiment of the present invention.

FIG. 3 is a graph for explaining an example of the present invention.

FIG. 4 is a schematic configuration diagram of an evaporation source according to a second embodiment of the present invention.

FIG. 5 is a cutaway sectional view of an evaporation source according to a third embodiment of the present invention.

FIG. 6 is a schematic configuration diagram of a conventional example.

FIG. 7 is a cross-sectional view of an evaporation source based on a conventional example.

[Explanation of symbols]

 11 Electron Beam 14, 31, 36 Crucible 15 Water-cooled Hearth 21a, 21b Unmelted Vapor Deposition Material 22 Melted Layer 25a, 25b Solidified Layer 26 Evaporated Layer 33 Lifting Device 37 Emission Gas Passage

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shinji Uchida 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (5)

[Claims] 1. A method for forming a thin film on a substrate by evaporating a vapor deposition material, the vapor deposition material in a crucible is irradiated with an electron beam to melt the vapor deposition material to form a molten metal, which has a thickness δ1. And a melting step of forming a first molten layer, and forming a solidified layer at the bottom of the first molten layer and forming a second molten layer of thickness δ2 in the molten metal after the melting step. And a film forming step of evaporating a molten metal having a thickness δe corresponding to a required evaporation amount for forming a substrate, and a relationship of δ1> δ2 + δe is established between the respective thicknesses δ1, δ2, δe. A method of manufacturing a thin film, comprising: 2. A method for forming a thin film on a substrate by evaporating a vapor deposition material, which comprises preliminarily melting a surface layer of the vapor deposition material in a crucible by irradiation of an electron beam and then solidifying the surface layer to a thickness δs. Forming a layer,
A replenishment step of replenishing the solidification layer with a replenishment material layer by replenishing an amount of the vapor deposition material corresponding to the required evaporation amount required for film formation of the substrate with δe at the time of melting, and after the replenishment step A melting step of melting the replenishment material layer and a part of the solidified layer by irradiation of the electron beam to form a molten metal, and forming a molten layer having a thickness δm; and, after the melting step, from the surface of the molten layer. And a film forming step of forming a film on a substrate by evaporating a molten metal having a thickness δe corresponding to the required evaporation amount, each thickness δs,
A method of manufacturing a thin film, characterized in that a relationship of δs>δm> δe is established between δm and δe. 3. The crucible is formed of a vapor deposition material itself, and at least an inner surface of the crucible has a solidified layer formed by being melted by irradiation of an electron beam and then solidified. A method for producing the thin film described. 4. A crucible is moved from a normal state where it contacts the water-cooled hearth to a state where this crucible is separated from the water-cooled hearth, and the vapor deposition material is melted in a state where this crucible is separated from the water-cooled hearth. The method for producing a thin film according to any one of claims 1 to 3. 5. A crucible provided with a vapor deposition material and placed in contact with a water-cooled hearth, and electron beam heating for evaporating the vapor deposition material in the crucible to form a thin film on a substrate provided above the crucible. And a shutter installed between the crucible and the substrate for cutting material vapor to the substrate, and the crucible is provided with a gas discharge passage for communicating the inside and outside of the wall of the crucible. A thin film manufacturing apparatus characterized by the above.