JPH06135791A - Semiconductor single crystal growth equipment - Google Patents
Semiconductor single crystal growth equipmentInfo
- Publication number
- JPH06135791A JPH06135791A JP28883792A JP28883792A JPH06135791A JP H06135791 A JPH06135791 A JP H06135791A JP 28883792 A JP28883792 A JP 28883792A JP 28883792 A JP28883792 A JP 28883792A JP H06135791 A JPH06135791 A JP H06135791A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crucible
- semiconductor single
- raw material
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 60
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000002994 raw material Substances 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000002019 doping agent Substances 0.000 abstract description 13
- 239000012535 impurity Substances 0.000 description 14
- 239000000956 alloy Substances 0.000 description 10
- 229910045601 alloy Inorganic materials 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
(57)【要約】
【目的】 育成単結晶の径方向のドーパント濃度を均一
にすることのできる半導体単結晶の育成装置を提供しよ
うとするものである。
【構成】 チョクラルスキー法により半導体単結晶を育
成する装置において、ルツボ内に半径の異なる２つ以上
の内ルツボを同軸上に配置し、最も外側の内ルツボの側
面に径方向に等間隔に２つの流通孔を設け、内側の内ル
ツボになるにしたがって流通孔の数を２倍づつ増やし、
隣接する内ルツボの流通孔を相互に最も離れた位置に配
置し、最も外側のルツボに原料供給手段を配置し、ルツ
ボの中央より半導体単結晶を引き上げることを特徴とす
る半導体単結晶の育成装置である。
(57) [Abstract] [Purpose] An object of the present invention is to provide a semiconductor single crystal growth apparatus capable of making the dopant concentration in the radial direction of the grown single crystal uniform. [Structure] In a device for growing a semiconductor single crystal by the Czochralski method, two or more inner crucibles having different radii are coaxially arranged in the crucible, and the inner crucible on the outermost side is radially equidistant. Two circulation holes are provided, and the number of circulation holes is doubled as the inner crucible becomes,
A device for growing a semiconductor single crystal, characterized in that the flow holes of the inner crucibles adjacent to each other are arranged at positions most distant from each other, the raw material supply means is arranged in the outermost crucible, and the semiconductor single crystal is pulled up from the center of the crucible. Is.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、原料を連続的に供給し
ながらチョクラルスキー法により半導体単結晶を育成す
る装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for growing a semiconductor single crystal by the Czochralski method while continuously supplying raw materials.
【０００２】[0002]
【従来の技術】育成する単結晶は、目的に応じてＰ型あ
るいはＮ型の半導体にするために、原料融液中に微量の
不純物元素（ドーパント元素）を混入させるが、これら
の不純物元素の育成単結晶中への混入の程度を示す偏析
係数は、シリコン単結晶にホウ素、アンチモン、リンを
ドープする場合を例にすると、それぞれ０．８、０．０
２３、０．３５といずれも１より低い。その結果、育成
結晶の上部と下部では不純物濃度が変化し、電気的性質
も変動するため、半導体素子を製造するためには好まし
くない。それ故、育成結晶のうち不純物濃度が一定の範
囲内に入っていない部分は不良品となってしまう。2. Description of the Related Art A single crystal to be grown has a small amount of impurity element (dopant element) mixed in a raw material melt in order to be a P-type or N-type semiconductor according to the purpose. The segregation coefficients indicating the degree of inclusion in the grown single crystal are 0.8 and 0.0, respectively, in the case where the silicon single crystal is doped with boron, antimony, or phosphorus.
23 and 0.35 are both lower than 1. As a result, the impurity concentration changes in the upper part and the lower part of the grown crystal, and the electrical properties also change, which is not preferable for manufacturing a semiconductor element. Therefore, a portion of the grown crystal where the impurity concentration does not fall within a certain range becomes a defective product.
【０００３】そこで、育成結晶の歩留りを向上させるた
めに、原料を連続的に供給しながら単結晶を育成する連
続チョクラルスキー法が開発された。特開昭52─58080
号公報には、原料の供給方法が示されており、特開昭59
─79000 号公報には、追加供給する多結晶原料に穴また
は溝を設け、その中にドーパント素材を封入する方法が
記載されている。この方法は、不純物濃度の精密な制御
に適さない。因みに、ここで必要とされる不純物原子の
濃度は、通常０．１〜１０ｐｐｍａ程度であり、濃度範
囲の許容値も±１０〜２０％と比較的狭い範囲である。
したがって、十分に計量された微量の不純物元素を定量
的に融液中に混入しなければならない。Therefore, in order to improve the yield of grown crystals, a continuous Czochralski method has been developed in which a single crystal is grown while continuously supplying a raw material. JP-A-52-58080
Japanese Unexamined Patent Publication (Kokai) No. Sho 59-59 discloses a method of supplying raw materials.
No. 79000 discloses a method in which a polycrystalline material to be additionally supplied is provided with holes or grooves, and a dopant material is enclosed therein. This method is not suitable for precise control of impurity concentration. Incidentally, the concentration of the impurity atom required here is usually about 0.1 to 10 ppma, and the allowable value of the concentration range is also a relatively narrow range of ± 10 to 20%.
Therefore, a well-measured trace amount of impurity elements must be quantitatively mixed in the melt.
【０００４】そこで、予め育成する単結晶に比して２〜
３桁高い不純物濃度を有する半導体単結晶を製造し、こ
の半導体単結晶から棒状又は板状のものを切り出した単
結晶母合金を用いる方法が提案された。この単結晶母合
金中には粒界がないため、不純物の粒界への偏析がな
く、また、ほぼ均一とみなせる程度の単結晶母合金を得
ることができ、不純物濃度も電気伝導度測定法により十
分に精度よく測定することができる。この単結晶母合金
を原料融液中に追加供給することにより、融液中の不純
物濃度を一定に保持することができ、その結果、引き上
げ育成される単結晶の不純物濃度を均一に保つことがで
きる。Therefore, in comparison with a single crystal grown in advance,
A method has been proposed in which a semiconductor single crystal having an impurity concentration that is three orders of magnitude higher is manufactured and a single crystal master alloy obtained by cutting a rod-shaped or plate-shaped semiconductor single crystal out of the semiconductor single crystal is used. Since there are no grain boundaries in this single crystal master alloy, there is no segregation of impurities to the grain boundaries, and it is possible to obtain a single crystal master alloy that can be considered to be almost uniform. The measurement can be performed with sufficient accuracy. By additionally supplying this single crystal master alloy into the raw material melt, the impurity concentration in the melt can be held constant, and as a result, the impurity concentration of the pulled single crystal can be kept uniform. it can.
【０００５】図４は、上記の単結晶母合金を用いる単結
晶製造装置の概念図である。グラファイトサセプタ１１
に支持された石英ルツボ１２には、同軸に配置された内
ルツボ１３が配置されており、ルツボ１２の環状部分の
原料融液にドーピング用の単結晶母合金１４を供給する
ために該合金１４の把持用チャック１５を下端に備えた
昇降自在な支持部材１６と、粒状の原料１７を供給する
ための供給管１８を設け、ルツボ１２の環状部分で調整
された原料融液１９を内ルツボ１３の１つの連通孔２０
を介して内ルツボ１３内に移行し、回転軸２１で回転攪
拌された原料融液１９に種結晶を浸漬し、単結晶２２を
回転させながら引き上げるようにしたものである。FIG. 4 is a conceptual diagram of a single crystal manufacturing apparatus using the above single crystal master alloy. Graphite susceptor 11
A quartz crucible 12 supported by an inner crucible 13 arranged coaxially with the quartz crucible 12 is provided to feed a single crystal master alloy 14 for doping to a raw material melt of an annular portion of the crucible 12. A support member 16 having a gripping chuck 15 at its lower end and capable of moving up and down, and a supply pipe 18 for supplying a granular raw material 17 are provided, and a raw material melt 19 adjusted by an annular portion of the crucible 12 is supplied to the inner crucible 13. One communication hole 20
The seed crystal is immersed in the raw material melt 19 which has been moved into the inner crucible 13 via the and is rotated and stirred by the rotary shaft 21, and the single crystal 22 is pulled while being rotated.
【０００６】以下、シリコン単結晶の育成を例にして説
明する。石英ルツボ１２内に所定割合の不純物元素を混
入した初期原料を充填するとともに、炉内の空気をアル
ゴンガスで置換した後、抵抗加熱ヒータで炉内を加熱す
る。初期原料が完全に溶解した後、上記ヒータの発熱量
を落としてシリコン融液１９の温度を単結晶育成に適し
た温度まで下げる。この状態で回転軸２１を回転させ、
上方より種結晶を下降させてシリコン融液１９に浸漬し
て単結晶２２を引き上げる。引き上げ中は、供給管１８
から粉状の原料１７を供給することにより単結晶２２の
育成損に対応させると共に、チャック１５に支持された
単結晶母合金１４を所定速度で下降させてルツボ１２の
環状部分のシリコン融液中に供給する。Hereinafter, the growth of a silicon single crystal will be described as an example. The quartz crucible 12 is filled with an initial raw material in which a predetermined proportion of an impurity element is mixed, and after the air in the furnace is replaced with argon gas, the inside of the furnace is heated by a resistance heater. After the initial raw material is completely melted, the calorific value of the heater is reduced to lower the temperature of the silicon melt 19 to a temperature suitable for single crystal growth. In this state, rotate the rotary shaft 21,
The seed crystal is lowered from above and immersed in the silicon melt 19 to pull up the single crystal 22. Supply pipe 18 during pulling up
In order to deal with the growth loss of the single crystal 22 by supplying the powdery raw material 17 from the single crystal master alloy 14 supported by the chuck 15, the single crystal master alloy 14 is lowered at a predetermined speed in the silicon melt of the annular portion of the crucible 12. Supply to.
【０００７】因みに、不純物濃度１ｐｐｍａで直径８０
ｍｍ、長さ１ｍのシリコン単結晶棒を引き上げ速度１ｍ
ｍ／ｍｉｎで引き上げ育成すると共に、不純物濃度５６
０ｐｐｍａで１０ｍｍ角、長さ１２０ｍｍの直方体状の
単結晶母合金を下降させる場合には、単結晶母合金の下
降速度は次のようになる。 ４×４×３．１４×１／（５６０×１×１）＝０．０９
（ｍｍ／ｍｉｎ） ルツボ１２の環状部分のシリコン融液は、内ルツボ１３
の貫通孔２０を介して中央部に移行し、育成単結晶２２
の回転により引き起こされる対流で攪拌され、不純物濃
度は均一化される。Incidentally, when the impurity concentration is 1 ppma, the diameter is 80
mm pulling speed of 1m silicon single crystal rod 1m
It is pulled up and grown at m / min and has an impurity concentration of 56.
When a rectangular parallelepiped single crystal master alloy of 10 mm square and 120 mm in length is lowered at 0 ppma, the descending speed of the single crystal master alloy is as follows. 4 × 4 × 3.14 × 1 / (560 × 1 × 1) = 0.09
(Mm / min) The silicon melt in the annular portion of the crucible 12 is
Of the grown single crystal 22 through the through hole 20 of
Is stirred by convection caused by the rotation of, and the impurity concentration is made uniform.
【０００８】[0008]
【発明が解決しようとする課題】しかし、図４の従来装
置では、ただ１つの内ルツボ１３を用い、かつ該ルツボ
に設けた貫通孔２０が１つであるため、育成単結晶２２
を回転させても、実際には、図５に示すように、内ルツ
ボ内の原料融液中のドーパント濃度は、貫通孔２０の近
くでは高く、離れるにしたがって低くなる。それ故、得
られる単結晶２２の径方向のドーパント濃度も決して均
一とは言えるものではなかった。そこで、本発明では、
上記の欠点を解消し、育成単結晶の径方向のドーパント
濃度を均一にすることのできる半導体単結晶の育成装置
を提供しようとするものである。However, in the conventional apparatus shown in FIG. 4, since only one inner crucible 13 is used and one through hole 20 is provided in the crucible, the grown single crystal 22
Even if is rotated, as shown in FIG. 5, the dopant concentration in the raw material melt in the inner crucible is actually high near the through hole 20 and becomes lower as it goes away. Therefore, the dopant concentration in the radial direction of the obtained single crystal 22 could not be said to be uniform at all. Therefore, in the present invention,
An object of the present invention is to provide a device for growing a semiconductor single crystal, which can solve the above-mentioned drawbacks and make the dopant concentration in the radial direction of the grown single crystal uniform.
【０００９】[0009]
【課題を解決するための手段】本発明は、チョクラルス
キー法により半導体単結晶を育成する装置において、ル
ツボ内に半径の異なる２つ以上の内ルツボを同軸上に配
置し、最も外側の内ルツボの側面に径方向に等間隔に２
つの流通孔を設け、内側の内ルツボになるにしたがって
流通孔の数を２倍づつ増やし、隣接する内ルツボの流通
孔を相互に最も離れた位置に配置し、最も外側のルツボ
に原料供給手段を配置し、ルツボの中央より半導体単結
晶を引き上げることを特徴とする半導体単結晶の育成装
置である。According to the present invention, in an apparatus for growing a semiconductor single crystal by the Czochralski method, two or more inner crucibles having different radii are coaxially arranged in the crucible and the outermost inner crucible is arranged. 2 at equal intervals in the radial direction on the side of the crucible
One circulation hole is provided, the number of circulation holes is doubled as the inner crucible becomes inner, and the circulation holes of the adjacent inner crucibles are arranged at the farthest positions from each other, and the raw material supply means is provided to the outermost crucible. Is arranged and the semiconductor single crystal is pulled from the center of the crucible.
【００１０】[0010]
【作用】図１は、本発明の１具体例である半導体単結晶
の育成装置の正面断面図であり、図２は、図１の平面図
である。図１の装置は、サセプタ１０に支持される外ル
ツボ１内には、同軸上に第１の内ルツボ２、第２の内ル
ツボ３、第３の内ルツボ４からなる３重の内ルツボを配
置し、回転軸５で回転可能に支持されている。そして、
図２に示すように、第１の内ルツボ２には２つの連通孔
を、第２の内ルツボ３には４つの連通孔を、第３の内ル
ツボ４には８つの連通孔を等間隔に設け、隣接する内ル
ツボの連通孔の位置は図のように相互に最も離れた位置
に配置した。原料粉末７は原料供給管６より外ルツボ１
と第１の内ルツボ２との間の環状部分に供給し、原料粉
末７から溶けだすドーパントは、図３の矢印のように、
拡散し、順次内側のルツボ内に移行するので、中央の内
ルツボ内にはほぼ均一なドーパント元素が流入すること
になる。そして、均一なドーパント元素を有する原料融
液８から単結晶９を引き上げ育成するので、育成単結晶
９の径方向のドーパント濃度を均一にすることができ
る。FIG. 1 is a front sectional view of a semiconductor single crystal growing apparatus which is one embodiment of the present invention, and FIG. 2 is a plan view of FIG. The apparatus shown in FIG. 1 has a triple inner crucible consisting of a first inner crucible 2, a second inner crucible 3 and a third inner crucible 4 coaxially in the outer crucible 1 supported by the susceptor 10. It is arranged and rotatably supported by the rotating shaft 5. And
As shown in FIG. 2, the first inner crucible 2 has two communication holes, the second inner crucible 3 has four communication holes, and the third inner crucible 4 has eight communication holes at equal intervals. The positions of the communication holes of the inner crucibles adjacent to each other were arranged at positions most distant from each other as shown in the figure. The raw material powder 7 is fed from the raw material supply pipe 6 to the outer crucible 1.
The dopant that is supplied to the annular portion between the first inner crucible 2 and the first raw crucible 2 and begins to melt from the raw material powder 7 is
Since it diffuses and sequentially migrates into the inner crucible, a substantially uniform dopant element flows into the central inner crucible. Since the single crystal 9 is pulled up and grown from the raw material melt 8 having a uniform dopant element, it is possible to make the dopant concentration in the radial direction of the grown single crystal 9 uniform.
【００１１】[0011]
【実施例】図１〜２の本発明の装置、及び、図４の従来
装置を用いて以下の条件の下で直径８０ｍｍ：長さ２０
０ｍｍのリンをドープしたシリコン単結晶を育成した。 引き上げ速度 １ｍｍ／ｈｒ 結晶回転速度 ５ｒｐｍ ルツボ回転速度 ５ｒｐｍ ルツボ材質 石英 ルツボ内径 従来装置 １２ｃｍ，２０ｃｍ（２重ルツ
ボ） 本発明の装置 １２ｃｍ，１６ｃｍ，２０ｃｍ
（３重ルツボ） ルツボの肉厚 ３ｍｍ 内ルツボの貫通孔の径 ５ｍｍEXAMPLE Using the apparatus of the present invention shown in FIGS. 1 and 2 and the conventional apparatus shown in FIG. 4, a diameter of 80 mm and a length of 20 under the following conditions.
A silicon single crystal doped with 0 mm of phosphorus was grown. Pulling speed 1 mm / hr Crystal rotation speed 5 rpm Crucible rotation speed 5 rpm Crucible material Quartz crucible inner diameter Conventional device 12 cm, 20 cm (double crucible) Device of the present invention 12 cm, 16 cm, 20 cm
(Triple crucible) Crucible wall thickness 3mm Inner crucible through hole diameter 5mm
【００１２】両方の装置で１ランづつ単結晶を育成し
た。得られた単結晶の径方向の比抵抗のバラツキを調べ
たところ、従来装置で得た単結晶は１０〜２０％である
のに対し、本発明の装置で得た単結晶は３〜７％と極め
て低い値を示した。なお、バラツキの程度を示す式とし
て下式を用いた。 Ｋ＝〔（Ｃmax −Ｃmin ）／Ｃav〕×１００（％） Ｃmax ：ある径方向での比抵抗の最大値 Ｃmin ：ある径方向での比抵抗の最小値 Ｃav ：ある径方向での比抵抗の平均値A single crystal was grown for each run on both devices. When the variation in the specific resistance in the radial direction of the obtained single crystal was investigated, the single crystal obtained by the conventional apparatus was 10 to 20%, whereas the single crystal obtained by the apparatus of the present invention was 3 to 7%. And showed an extremely low value. The following equation was used as an equation indicating the degree of variation. K = [(C max −C min ) / C av ] × 100 (%) C max : maximum value of specific resistance in a certain radial direction C min : minimum value of specific resistance in a certain radial direction C av : certain diameter Mean value of resistivity in the direction
【００１３】[0013]
【発明の効果】本発明は、上記の構成を採用することに
より、径方向の均一なドーパント濃度を有する半導体単
結晶の育成を可能にし、半導体素子の生産において歩留
りの向上を可能にした。According to the present invention, by adopting the above structure, it is possible to grow a semiconductor single crystal having a uniform dopant concentration in the radial direction and to improve the yield in the production of semiconductor devices.
【図１】本発明の１具体例である半導体単結晶の育成装
置の正面断面図である。FIG. 1 is a front cross-sectional view of a semiconductor single crystal growth device that is one specific example of the present invention.
【図２】図１の平面図である。FIG. 2 is a plan view of FIG.
【図３】図１の装置おけるドーパントの拡散経路を説明
するための図である。FIG. 3 is a diagram for explaining a diffusion path of a dopant in the device of FIG.
【図４】従来の半導体単結晶の育成装置の正面断面図で
ある。FIG. 4 is a front sectional view of a conventional semiconductor single crystal growing device.
【図５】図４の装置における内ルツボ内の原料融液のド
ーパント濃度勾配を示した図である。5 is a diagram showing a dopant concentration gradient of a raw material melt in an inner crucible in the apparatus of FIG.
Claims (1)
を育成する装置において、ルツボ内に半径の異なる２つ
以上の内ルツボを同軸上に配置し、最も外側の内ルツボ
の側面に径方向に等間隔に２つの流通孔を設け、内側の
内ルツボになるにしたがって流通孔の数を２倍づつ増や
し、隣接する内ルツボの流通孔を相互に最も離れた位置
に配置し、最も外側のルツボに原料供給手段を配置し、
ルツボの中央より半導体単結晶を引き上げることを特徴
とする半導体単結晶の育成装置。1. An apparatus for growing a semiconductor single crystal by the Czochralski method, in which two or more inner crucibles having different radii are coaxially arranged in the crucible, and the inner crucible on the outermost side is radially aligned. Two circulation holes are provided at intervals, the number of circulation holes is doubled as the inner crucible becomes inner, and the circulation holes of adjacent inner crucibles are arranged at the farthest positions from each other, and the outer crucible is arranged at the outermost crucible. Arrange the raw material supply means,
An apparatus for growing a semiconductor single crystal, wherein the semiconductor single crystal is pulled from the center of the crucible.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28883792A JPH06135791A (en) | 1992-10-27 | 1992-10-27 | Semiconductor single crystal growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28883792A JPH06135791A (en) | 1992-10-27 | 1992-10-27 | Semiconductor single crystal growth equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06135791A true JPH06135791A (en) | 1994-05-17 |
Family
ID=17735393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28883792A Pending JPH06135791A (en) | 1992-10-27 | 1992-10-27 | Semiconductor single crystal growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06135791A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5793725A (en) * | 1993-06-21 | 1998-08-11 | Fujitsu Limited | Optical information recording/reproducing apparatus having a composite prism with a plurality of emission surfaces |
| DE19700516B4 (en) * | 1996-01-12 | 2014-03-13 | Mitsubishi Materials Silicon Corp. | Single crystal pulling apparatus |
| WO2014159879A1 (en) * | 2013-03-14 | 2014-10-02 | Sunedison, Inc. | Czochralski crucible for controlling oxygen and related methods |
| CN113981526A (en) * | 2021-10-29 | 2022-01-28 | 安徽中科未来技术有限公司 | Device and method for realizing crystal growth of Czochralski method with doping or component adjustment |
-
1992
- 1992-10-27 JP JP28883792A patent/JPH06135791A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5793725A (en) * | 1993-06-21 | 1998-08-11 | Fujitsu Limited | Optical information recording/reproducing apparatus having a composite prism with a plurality of emission surfaces |
| DE19700516B4 (en) * | 1996-01-12 | 2014-03-13 | Mitsubishi Materials Silicon Corp. | Single crystal pulling apparatus |
| WO2014159879A1 (en) * | 2013-03-14 | 2014-10-02 | Sunedison, Inc. | Czochralski crucible for controlling oxygen and related methods |
| CN105247114A (en) * | 2013-03-14 | 2016-01-13 | 爱迪生太阳能公司 | Czochralski crucible for controlling oxygen and related methods |
| US9863062B2 (en) | 2013-03-14 | 2018-01-09 | Corner Star Limited | Czochralski crucible for controlling oxygen and related methods |
| US10450670B2 (en) | 2013-03-14 | 2019-10-22 | Corner Star Limited | Methods for growing a crystal ingot with reduced dislocations from a crucible |
| CN113981526A (en) * | 2021-10-29 | 2022-01-28 | 安徽中科未来技术有限公司 | Device and method for realizing crystal growth of Czochralski method with doping or component adjustment |
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