JPH06134264A - Turbidity removing device for semiconductor wafer grinding solution - Google Patents

Turbidity removing device for semiconductor wafer grinding solution

Info

Publication number
JPH06134264A
JPH06134264A JP29004192A JP29004192A JPH06134264A JP H06134264 A JPH06134264 A JP H06134264A JP 29004192 A JP29004192 A JP 29004192A JP 29004192 A JP29004192 A JP 29004192A JP H06134264 A JPH06134264 A JP H06134264A
Authority
JP
Japan
Prior art keywords
grinding
semiconductor wafer
hollow fiber
fiber membrane
soln
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29004192A
Other languages
Japanese (ja)
Inventor
Akira Hoshiide
明 星出
Noboru Yamamoto
登 山本
Yutaka Onuki
裕 大貫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KORYU KOGYO KK
KOURIYUU KOGYO KK
Mitsubishi Rayon Co Ltd
Original Assignee
KORYU KOGYO KK
KOURIYUU KOGYO KK
Mitsubishi Rayon Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KORYU KOGYO KK, KOURIYUU KOGYO KK, Mitsubishi Rayon Co Ltd filed Critical KORYU KOGYO KK
Priority to JP29004192A priority Critical patent/JPH06134264A/en
Publication of JPH06134264A publication Critical patent/JPH06134264A/en
Pending legal-status Critical Current

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  • Separation Using Semi-Permeable Membranes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

PURPOSE:To reduce the replacement of a semiconductor wafer grinding soln. to a large extent, in a device separating and filtering the grinding layer in the grinding soln., by using a porous hollow yarn membrane having specific fractionation capacity as a separation membrane to separate the grinding layer in the grinding soln. with high flux over a long period of time. CONSTITUTION:In a device 13 separating and filtering the grinding layer in a semiconductor wafer grinding soln., a porous hollow yarn membrane 14 with fractionation capacity of 0.05mum or lass is used as a separation membrane. As a result, the grinding layer in the semiconductor grinding soln. can be separated and filtered with high flux over a long period of time and the replacement of the grinding soln. can be reduced to a large extent.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体ウエハー研削液
中の研削屑を分離濾過する装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for separating and filtering grinding debris in a semiconductor wafer grinding fluid.

【0002】[0002]

【従来の技術】従来、半導体ウエハーは、単結晶シリコ
ン等を鏡面を有する円板状に加工して半導体デバイスの
基材として用いられている。この半導体ウエハーの製造
におけるインゴットの切断(スライシング)、外周面取
り研削(ベベリング)、平面研削加工(ラッピング)等
の工程においては、ケミカルの添加された研削液が使用
されているが、時間の経過とともに研削屑の液中濃度が
高くなり、ついには研削液として使用できず研削液の取
り換えが必要となる。
2. Description of the Related Art Conventionally, a semiconductor wafer is used as a base material of a semiconductor device by processing a single crystal silicon into a disk shape having a mirror surface. In the processes such as ingot cutting (slicing), outer peripheral chamfering grinding (beveling), and surface grinding (lapping) in the manufacture of this semiconductor wafer, a chemical-added grinding fluid is used, but with the passage of time The concentration of grinding debris in the liquid becomes high, and eventually it cannot be used as a grinding liquid and the grinding liquid needs to be replaced.

【0003】従来、このような研削液中の研削屑の除濁
法としては、ケイソウ土による濾過、糸巻きや不織布か
らなるカートリッジフィルターを用いた濾過等が実施さ
れてきたが、捕捉できる懸濁物の量や粒径の点で満足で
きるものではなかった。また、各種濾過膜を利用した除
濁も試みられているが、逆浸透膜の場合には高濃度の研
削屑含有液に対応できず前処理工程が必要であった。一
方、限外濾過膜の場合には、プレート、チューブラー膜
では処理量に対する設備コストが多大となり、また多孔
質中空糸膜を用いた加圧濾過では、極めて短時間で目詰
りが生じた。
Hitherto, as a method for removing the grinding dust in the grinding fluid, filtration with diatomaceous earth, filtration with a cartridge filter made of bobbin or non-woven fabric, etc. have been carried out. Was not satisfactory in terms of amount and particle size. Further, although attempts have been made to remove turbidity using various filtration membranes, a reverse osmosis membrane cannot cope with a liquid containing a high concentration of grinding debris and requires a pretreatment step. On the other hand, in the case of the ultrafiltration membrane, the equipment cost for the treatment amount was large for the plate and the tubular membrane, and the pressure filtration using the porous hollow fiber membrane caused clogging in an extremely short time.

【0004】[0004]

【発明が解決しようとする課題】本発明の目的は、半導
体ウエハー研削液中の研削屑を長期にわたって高フラッ
クスで分離濾過でき、研削液の取り換えを大幅に低減で
きる除濁装置を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide a turbidity remover capable of separating and filtering grinding debris in a semiconductor wafer grinding liquid with a high flux for a long period of time and greatly reducing replacement of the grinding liquid. is there.

【0005】[0005]

【課題を解決するための手段】すなわち、本発明は、半
導体ウエハー研削液中の研削屑を分離濾過する装置にお
いて、分離膜として分画性能が0.05μm以下の多孔
質中空糸膜を用いたことを特徴とする半導体ウエハー研
削液の除濁装置である。
That is, according to the present invention, a porous hollow fiber membrane having a fractionation performance of 0.05 μm or less is used as a separation membrane in an apparatus for separating and filtering grinding dust in a semiconductor wafer grinding liquid. A turbidity eliminator for a semiconductor wafer grinding fluid.

【0006】[0006]

【作用】本発明の半導体ウエハー研削液の除濁装置は、
該装置の分離槽内に設置される分離膜として分画性能が
0.05μm以下の多孔質中空糸膜を使用する。分画性
能が0.05μm以下の多孔質中空糸膜を分離膜として
使用すると、半導体ウエハー研削液中の研削屑による多
孔質中空糸膜細孔の目詰りの発生が特異的に抑制され、
フラックス(濾過液量)の低下が殆ど生じない。本発明
にいう分画性能の値とは、その粒子径のポリスチレン製
ラテックス粒子の透過阻止率が90%以上となる値をも
って表わす。
The semiconductor wafer grinding liquid turbidity removing device of the present invention comprises:
A porous hollow fiber membrane having a fractionation performance of 0.05 μm or less is used as a separation membrane installed in the separation tank of the apparatus. When a porous hollow fiber membrane having a fractionation performance of 0.05 μm or less is used as the separation membrane, the occurrence of clogging of the pores of the porous hollow fiber membrane due to the grinding dust in the semiconductor wafer grinding fluid is specifically suppressed,
Almost no decrease in flux (volume of filtrate) occurs. The value of the fractionation performance referred to in the present invention is expressed as a value at which the permeation inhibition rate of polystyrene latex particles of that particle size is 90% or more.

【0007】分画性能が0.1μm程度の多孔質中空糸
膜を用いても懸濁物質(研削屑)の漏洩率の点では問題
は生じない。しかし、分画性能が0.05μmを超える
ものを用いた場合には、細孔の目詰りが生じやすくフラ
ックスが早期に低下する。本発明の除濁装置において
は、分画性能が0.038〜0.005μmの範囲の多
孔質中空糸膜を用いることがより好ましい。不必要に分
画性能が小さいもの、例えば分子量5万程度の除去率が
10%以上のものを用いるとフラックスが小さくなり過
ぎ装置が大型化するため好ましくない。
Even if a porous hollow fiber membrane having a fractionation performance of about 0.1 μm is used, no problem occurs in terms of the leakage rate of suspended substances (grinding dust). However, when a fractionation performance of more than 0.05 μm is used, the pores are likely to be clogged, and the flux drops early. In the turbidity removing apparatus of the present invention, it is more preferable to use a porous hollow fiber membrane having a fractionation performance in the range of 0.038 to 0.005 μm. It is not preferable to use a material having unnecessarily small fractionation performance, for example, a material having a molecular weight of about 50,000 and a removal rate of 10% or more because the flux becomes too small and the apparatus becomes large.

【0008】多孔質中空糸膜は、その製法により代表的
には溶剤抽出法によるものと、延伸開口法によるものと
が知られているが、延伸開口法によるものは、孔形状が
スリット状であるためか目詰りがより生じにくいので本
発明装置に用いる中空糸膜として好ましいものである。
[0008] The porous hollow fiber membrane is known to be produced by a solvent extraction method and a stretch opening method, depending on the production method. The stretch opening method has a slit-like pore shape. This is preferable as the hollow fiber membrane used in the device of the present invention because it is less likely to cause clogging.

【0009】本発明の除濁装置が処理の対象とする半導
体ウエハー研削液にいう半導体ウエハーとは、シリコン
ウエハーに限定されず、ガリウムヒ素ウエハー等も包含
される。研削液は、通常グリコール等の化学薬品を含む
水溶液である。
The semiconductor wafer referred to in the semiconductor wafer grinding liquid to be processed by the turbidity removing apparatus of the present invention is not limited to a silicon wafer, but includes a gallium arsenide wafer and the like. The grinding fluid is usually an aqueous solution containing a chemical such as glycol.

【0010】本発明の除濁装置においては、加圧濾過方
式も採用できるが、吸引濾過による全量濾過方式を採用
することが好ましい。吸引濾過方式ではそれ程膜間の差
圧を大きくすることができないため、加圧濾過方式に比
較するとフラックスが小さく装置は大型化する。しか
し、耐圧設備が不要であり、特に研削屑が中空糸膜の細
孔の深部まで侵入することがないので、長期に亙って高
いフラックスが維持できるという効果が発揮される。ま
た、吸引圧力がそれ程大きくないので、中空糸膜を物理
的に運動させると、膜表面に吸引付着されている懸濁物
を膜表面から容易に離脱させることができる。
In the turbidity removing apparatus of the present invention, a pressure filtration system can be adopted, but it is preferable to employ a total volume filtration system by suction filtration. Since the suction filtration method cannot increase the pressure difference between the membranes so much, the flux is small and the apparatus becomes large as compared with the pressure filtration method. However, no pressure equipment is required, and in particular, since grinding dust does not penetrate into the deep part of the pores of the hollow fiber membrane, the effect that a high flux can be maintained for a long time is exhibited. Further, since the suction pressure is not so high, physically moving the hollow fiber membrane makes it possible to easily separate the suspension adsorbed and attached to the membrane surface from the membrane surface.

【0011】なお、ここでいう全量濾過方式とは、クロ
スフロー方式とは異なり、分離膜へ導いた研削液を全量
分離膜を介して濾過して回収する方式をいう。すなわ
ち、必ずしも循環使用する研削液の全量を分離槽へ導く
必要はないが、生産工程での研削液中の切削屑の要求濃
度レベルに応じて、通常は循環液の一部(5%程度以
上)を側流として分離槽へ導き、側流を全量濾過処理す
れば研削液中の切削屑の濃度の管理が可能である。
Incidentally, the total volume filtration system referred to herein is a system which, unlike the cross flow system, collects the grinding fluid guided to the separation membrane by filtering it through the total volume separation membrane. That is, it is not always necessary to introduce all of the circulating grinding fluid to the separation tank, but depending on the required concentration level of cutting debris in the grinding fluid in the production process, a part of the circulating fluid (about 5% or more) is usually used. ) Is introduced into the separation tank as a sidestream, and the total amount of the sidestream is filtered, the concentration of cutting chips in the grinding fluid can be controlled.

【0012】また、本発明の除濁装置においては、中空
糸膜を移動(遊泳)させながら濾過を実施することが好
ましい。このような本発明の除濁装置に用いるのが適し
た中空糸膜モジュールとしては、図1に示されるように
中空糸膜がシート状に配設されたものが例示される。こ
のような中空糸膜モジュールでは各中空糸膜の間隙に切
削屑が詰まりにくく、かつ中空糸膜表面に付着した切削
屑を震い落すことが容易である。
Further, in the turbidity removing apparatus of the present invention, it is preferable to carry out filtration while moving (swimming) the hollow fiber membrane. As a hollow fiber membrane module suitable for use in such a turbidity eliminator of the present invention, a hollow fiber membrane arranged in a sheet form as shown in FIG. 1 is exemplified. In such a hollow fiber membrane module, the cutting debris is unlikely to be clogged in the gaps between the hollow fiber membranes, and the cutting debris attached to the hollow fiber membrane surface can be easily shaken off.

【0013】本発明の除濁装置においては、経時的に中
空糸膜の目詰りが進みフラックスが低下した場合には、
一回数秒程度の間欠逆洗を行えば、容易にフラックスの
回復が図れる。
In the turbidity remover of the present invention, when the hollow fiber membrane is clogged with time and the flux is lowered,
Flux can be easily recovered by performing intermittent backwashing for about one second.

【0014】なお、除濁装置内には中空糸膜不透過の研
削屑が蓄積するので、適当な周期をもって除濁装置の底
部に堆積した研削屑および除濁装置内の研削屑が濃縮さ
れた研削液を廃棄すればよい。また、別途沈殿槽を設け
て研削屑を沈殿濃縮して研削屑および研削液の廃棄処理
を行なってもよい。このようにして、廃棄液量を大幅に
低減することができる。
Since the hollow fiber membrane-impermeable grinding debris accumulates in the turbidity remover, the grinding debris accumulated on the bottom of the turbidity eliminator and the grinding debris in the turbidity eliminator are concentrated at an appropriate period. Discard the grinding fluid. Alternatively, a separate sedimentation tank may be provided to precipitate and concentrate the grinding dust, and the grinding dust and the grinding liquid may be discarded. In this way, the amount of waste liquid can be significantly reduced.

【0015】[0015]

【実施例】【Example】

実施例および比較例 シリコンウエハーの平面研削工程の循環研削液を、図2
で示されるフローからなる除濁装置で処理した。すなわ
ち、循環タンク12内の研削液を研削工程11で使用
し、研削屑を含む研削液として循環タンクへ戻した。一
方、循環タンク内の研削屑を含む研削液を給水ポンプ1
5を介して分離槽13へ導き、ここでポリエチレン製多
孔質中空糸膜14を分離膜とする中空糸膜モジュール
(総膜面積10m2 )を用いて吸引ポンプ16により約
0.2kg/cm2 の圧力で吸引濾過し、濾過液を循環タン
クに戻した。中空糸膜モジュールは、図1に示したよう
タイプのもので、クランク17を用いて中空糸膜を常時
遊泳させた。また、分離槽底部の濃縮研削屑を含む液を
沈殿槽19へ導き、沈殿槽の上澄み液は、再度分離槽に
戻した。
Example and Comparative Example FIG. 2 shows a circulating grinding fluid in a surface grinding process of a silicon wafer.
It processed with the turbidity removal apparatus which consists of the flow shown by. That is, the grinding fluid in the circulation tank 12 was used in the grinding step 11 and returned to the circulation tank as a grinding fluid containing grinding dust. On the other hand, the water supply pump 1 supplies the grinding fluid containing the grinding dust in the circulation tank.
A hollow fiber membrane module (total membrane area 10 m 2 ) having a polyethylene porous hollow fiber membrane 14 as a separation membrane is introduced to the separation tank 13 via a suction pump 16 to obtain about 0.2 kg / cm 2. Suction filtration was performed at a pressure of, and the filtrate was returned to the circulation tank. The hollow fiber membrane module is of the type shown in FIG. 1, and the crank 17 was used to constantly swim the hollow fiber membrane. Further, the liquid containing the concentrated grinding dust at the bottom of the separation tank was introduced into the precipitation tank 19, and the supernatant of the precipitation tank was returned to the separation tank again.

【0016】中空糸膜としてEHF−390A(三菱レ
イヨン (株) 製、商品名、分画性能0.03μm:実施
例)を用いた場合と、EHF−410T(三菱レイヨン
(株) 製、商品名、分画性能0.1μm:比較例)を用
いた場合の循環タンクへの送液量を測定し、図3の結果
を得た。なお、分離膜透過後の研削液中の研削屑の濃度
は、実施例では9ppm、比較例では170ppmであ
った。また、試験時における循環タンク内の研削液中の
研削屑の濃度は、3000〜3200ppmであった。
EHF-390A (manufactured by Mitsubishi Rayon Co., Ltd., trade name, fractionation performance 0.03 μm: Example) was used as the hollow fiber membrane, and EHF-410T (Mitsubishi Rayon).
The amount of liquid fed to the circulation tank was measured when a product manufactured by Co., Ltd., trade name, fractionation performance 0.1 μm: Comparative Example) was used, and the results shown in FIG. 3 were obtained. The concentration of grinding debris in the grinding fluid after passing through the separation membrane was 9 ppm in the example and 170 ppm in the comparative example. The concentration of grinding debris in the grinding fluid in the circulation tank during the test was 3000 to 3200 ppm.

【0017】[0017]

【発明の効果】本発明の除濁装置によれば、循環研削液
の懸濁物の濃度を一定のレベルに保つことができ、半導
体ウエハーの製品歩留りを高レベルに保つことが可能で
ある。また、長期に亙り中空糸膜の目詰りがなく、高フ
ラックスを保つことができるので研削液の廃棄量が低減
でき、研削用ケミカルの使用量も少なくてすむ。
According to the turbidity remover of the present invention, the concentration of the suspension of the circulating grinding fluid can be maintained at a constant level, and the product yield of semiconductor wafers can be maintained at a high level. Further, since the hollow fiber membrane is not clogged for a long period of time and a high flux can be maintained, the amount of grinding fluid to be discarded can be reduced, and the amount of grinding chemical used can be small.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の除濁装置に用いるのに適した中空糸膜
モジュールの一例を示す部分切欠斜視図である。
FIG. 1 is a partially cutaway perspective view showing an example of a hollow fiber membrane module suitable for use in the turbidity removing apparatus of the present invention.

【図2】本発明の除濁装置の一例のフローシートであ
る。
FIG. 2 is a flow sheet of an example of the turbidity removing device of the present invention.

【図3】本発明の除濁装置における分離膜透過後循環タ
ンクへの帰還研削液のフラックスの経時変化を示すグラ
フである。
FIG. 3 is a graph showing changes over time in the flux of the return grinding fluid to the circulation tank after passing through the separation membrane in the turbidity removal apparatus of the present invention.

【符号の説明】[Explanation of symbols]

1 中空糸膜 2 構造材 3 ポッティング材 4 集水口 11 研削機 12 貯水タンク 13 分離槽 14 中空糸膜モジュール 15 給水ポンプ 16 吸引ポンプ 17 クランク 18 コンプレッサー 19 沈殿槽 1 Hollow Fiber Membrane 2 Structural Material 3 Potting Material 4 Water Collection Port 11 Grinder 12 Water Storage Tank 13 Separation Tank 14 Hollow Fiber Membrane Module 15 Water Supply Pump 16 Suction Pump 17 Crank 18 Compressor 19 Sedimentation Tank

───────────────────────────────────────────────────── フロントページの続き (72)発明者 大貫 裕 東京都千代田区内神田3丁目18番3号 甲 竜工業株式会社東京支店内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Yutaka Onuki 3-18-3 Kanda, Chiyoda-ku, Tokyo Koryu Kogyo Co., Ltd. Tokyo Branch

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 半導体ウエハー研削液中の研削屑を分離
濾過する装置において、分離膜として分画性能が0.0
5μm以下の多孔質中空糸膜を用いたことを特徴とする
半導体ウエハー研削液の除濁装置。
1. An apparatus for separating and filtering grinding dust in a semiconductor wafer grinding fluid, wherein the separation membrane has a fractionation performance of 0.0.
A turbidity eliminator for a semiconductor wafer grinding liquid, characterized by using a porous hollow fiber membrane having a diameter of 5 μm or less.
JP29004192A 1992-10-28 1992-10-28 Turbidity removing device for semiconductor wafer grinding solution Pending JPH06134264A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29004192A JPH06134264A (en) 1992-10-28 1992-10-28 Turbidity removing device for semiconductor wafer grinding solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29004192A JPH06134264A (en) 1992-10-28 1992-10-28 Turbidity removing device for semiconductor wafer grinding solution

Publications (1)

Publication Number Publication Date
JPH06134264A true JPH06134264A (en) 1994-05-17

Family

ID=17751022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29004192A Pending JPH06134264A (en) 1992-10-28 1992-10-28 Turbidity removing device for semiconductor wafer grinding solution

Country Status (1)

Country Link
JP (1) JPH06134264A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010064197A (en) * 2008-09-11 2010-03-25 Nomura Micro Sci Co Ltd Method and device of treating silicon-containing drain
WO2014083590A1 (en) * 2012-11-28 2014-06-05 株式会社クラレ Coolant regeneration method and coolant regeneration device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010064197A (en) * 2008-09-11 2010-03-25 Nomura Micro Sci Co Ltd Method and device of treating silicon-containing drain
WO2014083590A1 (en) * 2012-11-28 2014-06-05 株式会社クラレ Coolant regeneration method and coolant regeneration device
JP5941995B2 (en) * 2012-11-28 2016-06-29 株式会社クラレ Coolant regeneration method and coolant regeneration apparatus

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